CN114600240A - 显示用发光元件及具有其的led显示装置 - Google Patents

显示用发光元件及具有其的led显示装置 Download PDF

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Publication number
CN114600240A
CN114600240A CN202080075493.9A CN202080075493A CN114600240A CN 114600240 A CN114600240 A CN 114600240A CN 202080075493 A CN202080075493 A CN 202080075493A CN 114600240 A CN114600240 A CN 114600240A
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CN
China
Prior art keywords
light emitting
type semiconductor
emitting stack
light
semiconductor layer
Prior art date
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Pending
Application number
CN202080075493.9A
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English (en)
Chinese (zh)
Inventor
张锺敏
金彰渊
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Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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Filing date
Publication date
Priority claimed from US17/076,750 external-priority patent/US11658275B2/en
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Publication of CN114600240A publication Critical patent/CN114600240A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN202080075493.9A 2019-10-28 2020-10-28 显示用发光元件及具有其的led显示装置 Pending CN114600240A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962926590P 2019-10-28 2019-10-28
US62/926,590 2019-10-28
US17/076,750 US11658275B2 (en) 2019-10-28 2020-10-21 Light emitting device for display and LED display apparatus having the same
US17/076,750 2020-10-21
PCT/KR2020/014768 WO2021085993A1 (ko) 2019-10-28 2020-10-28 디스플레이용 발광 소자 및 그것을 갖는 led 디스플레이 장치

Publications (1)

Publication Number Publication Date
CN114600240A true CN114600240A (zh) 2022-06-07

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CN202080075493.9A Pending CN114600240A (zh) 2019-10-28 2020-10-28 显示用发光元件及具有其的led显示装置
CN202022439692.3U Active CN212934617U (zh) 2019-10-28 2020-10-28 发光元件及显示装置

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US (2) US12159966B2 (enExample)
EP (1) EP4024479A4 (enExample)
JP (1) JP7709433B2 (enExample)
KR (1) KR20220093086A (enExample)
CN (2) CN114600240A (enExample)

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JP7709433B2 (ja) * 2019-10-28 2025-07-16 ソウル バイオシス カンパニー リミテッド ディスプレイ用発光素子及びそれを有するｌｅｄディスプレイ装置
CN112133734B (zh) * 2020-09-29 2022-08-30 湖北长江新型显示产业创新中心有限公司 显示面板及显示装置
KR20220079170A (ko) * 2020-12-04 2022-06-13 엘지디스플레이 주식회사 발광 소자 및 표시 장치
US20250204092A1 (en) * 2023-12-18 2025-06-19 Innolux Corporation Semiconductor chip and semiconductor device
KR20250164979A (ko) * 2024-05-17 2025-11-25 주식회사 오플렉스 발광 다이오드 필름

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CN104037281A (zh) * 2013-03-07 2014-09-10 株式会社东芝 半导体发光元件及其制造方法
CN105830141A (zh) * 2013-12-17 2016-08-03 Lg电子株式会社 使用半导体发光器件的显示设备及其制造方法
US20190164945A1 (en) * 2017-11-27 2019-05-30 Seoul Viosys Co., Ltd. Light emitting diode for display and display apparatus having the same
US20190189596A1 (en) * 2017-12-20 2019-06-20 Seoul Viosys Co., Ltd. Led unit for display and display apparatus having the same
CN212934617U (zh) * 2019-10-28 2021-04-09 首尔伟傲世有限公司 发光元件及显示装置

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JP2007080885A (ja) 2005-09-09 2007-03-29 New Japan Chem Co Ltd 光半導体用封止剤、光半導体及びその製造方法
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CN103477456A (zh) * 2011-02-09 2013-12-25 首尔半导体株式会社 具有波长转换层的发光装置
CN104037281A (zh) * 2013-03-07 2014-09-10 株式会社东芝 半导体发光元件及其制造方法
CN105830141A (zh) * 2013-12-17 2016-08-03 Lg电子株式会社 使用半导体发光器件的显示设备及其制造方法
US20190164945A1 (en) * 2017-11-27 2019-05-30 Seoul Viosys Co., Ltd. Light emitting diode for display and display apparatus having the same
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CN212934617U (zh) * 2019-10-28 2021-04-09 首尔伟傲世有限公司 发光元件及显示装置

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Publication number Publication date
US20230378412A1 (en) 2023-11-23
US12159966B2 (en) 2024-12-03
EP4024479A4 (en) 2023-10-11
CN212934617U (zh) 2021-04-09
KR20220093086A (ko) 2022-07-05
JP7709433B2 (ja) 2025-07-16
EP4024479A1 (en) 2022-07-06
US20250023006A1 (en) 2025-01-16
JP2023501269A (ja) 2023-01-18

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