CN114582897A - Preparation method of image sensor and image sensor - Google Patents
Preparation method of image sensor and image sensor Download PDFInfo
- Publication number
- CN114582897A CN114582897A CN202011371363.8A CN202011371363A CN114582897A CN 114582897 A CN114582897 A CN 114582897A CN 202011371363 A CN202011371363 A CN 202011371363A CN 114582897 A CN114582897 A CN 114582897A
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- Prior art keywords
- image sensor
- dielectric layer
- passivation layer
- conductive film
- transparent conductive
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 238000002161 passivation Methods 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000003860 storage Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 5
- 238000005034 decoration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a preparation method of an image sensor and the image sensor, wherein the image sensor comprises: an active passivation layer including charge storage regions; a transparent conductive film covering the active passivation layer; an insulating layer covering the sidewall of the active passivation layer; a metal wire electrically connecting the transparent conductive film and the control circuit. According to the technical scheme, electrons can be captured and stored through the active passivation layer, so that photo-generated electrons cannot easily reach the light incident surface of the image sensor, the surface dark current is reduced, and the imaging quality of the image sensor is greatly improved. And the function of periodically and actively controlling the passivation layer is realized through the electrical connection of the transparent conductive film and the control circuit.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a manufacturing method of an image sensor and the image sensor.
Background
For an image sensor, a new silicon surface exposed after the back surface process is thinned has defects, dangling bonds and damage, so that surface dark current is generated, noise points of the image sensor are increased rapidly, the imaging quality is reduced greatly, and even effective imaging is difficult. Therefore, reducing the dark current on the surface of the image sensor becomes a key to the application of the image sensor.
Disclosure of Invention
The invention aims to solve the technical problem of dark current on the surface of an image sensor, and provides a preparation method of the image sensor and the image sensor.
The invention provides a preparation method of an image sensor, which comprises the following steps: depositing an active passivation layer on the light incident surface of the image sensor, wherein the active passivation layer comprises a charge storage region; growing a transparent conductive film on the surface of the active passivation layer; patterning the active passivation layer, and removing the transparent conductive film of the corresponding part to expose a control circuit arranged in the image sensor; metal wires for electrically connecting the transparent conductive film and the control circuit are formed.
The present invention also provides an image sensor comprising: an active passivation layer including a charge storage region; a transparent conductive film covering the active passivation layer; an insulating layer covering the sidewall of the active passivation layer; a metal wire electrically connecting the transparent conductive film and the control circuit.
According to the technical scheme, electrons can be captured and stored through the active passivation layer, so that photo-generated electrons cannot easily reach the light incident surface of the image sensor, the surface dark current is reduced, and the imaging quality of the image sensor is greatly improved. And the function of periodically and actively controlling the passivation layer is realized through the electrical connection of the transparent conductive film and the control circuit.
Drawings
FIG. 1 is a schematic diagram illustrating the steps of one embodiment of the present invention.
FIGS. 2A-2H are schematic views of the process of steps S11-S14 shown in FIG. 1.
Fig. 3 is a schematic diagram illustrating a step of forming the active passivation layer according to an embodiment of the invention.
Fig. 4 is a schematic diagram illustrating a step of forming a metal wire according to an embodiment of the present invention.
Detailed Description
The following describes in detail a specific embodiment of a method for manufacturing an image sensor according to the present invention with reference to the accompanying drawings.
FIG. 1 is a schematic diagram illustrating the steps of an embodiment of the present invention, including: step S11, depositing an active passivation layer on the light incident surface of the image sensor, wherein the active passivation layer comprises a charge storage region; step S12, a transparent conductive film is grown on the surface of the active passivation layer; step S3, patterning the active passivation layer, and removing the transparent conductive film of the corresponding portion to expose the control circuit disposed inside the image sensor; in step S14, metal wires for electrically connecting the transparent conductive film and the control circuit are formed.
Referring to step S11, as shown in fig. 2A-2C, an active passivation layer including charge storage regions is deposited on the light incident surface of the image sensor 202. In an embodiment of the present invention, the active passivation layer may be formed by the following method, and the following steps are schematically illustrated with reference to fig. 3:
referring to step S31, as shown in fig. 2A, a first dielectric layer 204 is grown on the light incident surface of the image sensor 202. The image sensor 202 includes control circuitry 201 and through-silicon vias 203. In a specific embodiment, the first dielectric layer 204 is made of silicon dioxide or silicon oxynitride, and the thickness of the first dielectric layer 204 is 1nm to 20 nm.
Referring to step S32, a second dielectric layer 205 is grown on the surface of the first dielectric layer 204 as shown in fig. 2B. In a specific embodiment, the second dielectric layer 205 is made of a silicon nitride material, and the thickness of the second dielectric layer 205 is 5nm to 40 nm.
Referring to step S33, a third dielectric layer 206 is grown on the surface of the second dielectric layer 205 as shown in fig. 2C. In a specific embodiment, the third dielectric layer 206 is made of silicon dioxide or silicon oxynitride material, and the thickness of the third dielectric layer 206 is 1nm to 40 nm.
The charge storage region comprises a charge storage interface formed by two heterogeneous materials, wherein the heterogeneous materials are respectively and independently selected from any one of silicon oxide, silicon nitride, silicon oxynitride, zinc oxide, hafnium oxide, aluminum oxide and lanthanum oxide materials. In other embodiments, a plurality of charge storage regions may be formed by separating a plurality of second dielectric layers 205 by the first dielectric layer 204 or the third dielectric layer 206. The charge storage region enables the active passivation layer to have the characteristics of capturing and storing electrons, the light incident surface of the image sensor 202 has a high energy level, photo-generated electrons cannot easily reach the surface, dark current on the surface of the image sensor 202 is reduced, and meanwhile, a foundation is provided for realizing the function of periodically and actively controlling the active passivation layer.
Referring to step S12, a transparent conductive film 207 made of graphene or black phosphorus is grown on the surface of the active passivation layer as shown in fig. 2D.
Referring to step S13, as shown in fig. 2E, the active passivation layer is patterned, and the transparent conductive film 207 is removed at a corresponding portion to expose the control circuit disposed inside the image sensor.
As shown in fig. 2F to 2H, referring to step S14, metal wires 209 for electrically connecting the transparent conductive film 207 and the control circuit 201 are formed. In one embodiment of the present invention, the metal wire 209 may be formed by the following method, and referring to fig. 4, an implementation diagram of the following steps is shown:
referring to step S41, as shown in fig. 2F, an insulating layer 208 is covered on the sidewalls of the active passivation layer. The insulating layer 208 covers the sidewalls of the active passivation layer and the surface of the transparent conductive film 207.
Referring to step S42, as shown in fig. 2G, a wire window is opened on the insulating layer 208.
Referring to step S43, as shown in fig. 2H, a metal wire 209 is formed in the wiring window of the insulating layer to electrically connect the transparent conductive film 207 and the control circuit 201. The metal wire 209 is made of copper, aluminum, tungsten, titanium or nickel. The control circuit 201 is a clock circuit.
Next, a specific implementation of the image sensor obtained after the above steps are completed is given with reference to the accompanying drawings, and the structure of the image sensor is shown in fig. 2H, and includes:
an active passivation layer including charge storage regions; a transparent conductive film 207 covering the active passivation layer; an insulating layer 208, wherein the insulating layer 208 covers sidewalls of the active passivation layer; a metal wire 209, wherein the metal wire 209 electrically connects the transparent conductive film 207 and the control circuit 201. Pressure is periodically applied to the transparent conductive film 207 by the control circuit 201 to realize the function of periodically and actively controlling the passivation layer.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (12)
1. A method for manufacturing an image sensor is characterized by comprising the following steps:
depositing an active passivation layer on the light incident surface of the image sensor, wherein the active passivation layer comprises a charge storage region;
growing a transparent conductive film on the surface of the active passivation layer;
patterning the active passivation layer, and removing the transparent conductive film of the corresponding part to expose a control circuit arranged in the image sensor;
metal wires for electrically connecting the transparent conductive film and the control circuit are formed.
2. The method of claim 1, wherein the charge storage region comprises a charge storage interface formed by two heterogeneous materials, each of the heterogeneous materials being independently selected from any one of silicon oxide, silicon nitride, silicon oxynitride, zinc oxide, hafnium oxide, aluminum oxide, or lanthanum oxide.
3. The method of claim 2, wherein the charge storage region comprises a first dielectric layer, a second dielectric layer, and a third dielectric layer: the first dielectric layer is made of silicon oxide or silicon oxynitride material; the second dielectric layer is made of a silicon nitride material; the third dielectric layer is made of silicon oxide or silicon oxynitride material.
4. The method of claim 3, wherein the first dielectric layer has a thickness of 1nm to 20nm, the second dielectric layer has a thickness of 5nm to 40nm, and the third dielectric layer has a thickness of 1nm to 40 nm.
5. The method according to claim 1, wherein the material of the transparent conductive film is graphene or black phosphorus.
6. The method of claim 1, wherein the metal wire is made of a material selected from the group consisting of copper, aluminum, tungsten, titanium, and nickel.
7. The method of claim 1, wherein the control circuit is a clock circuit.
8. The method of claim 1, wherein the step of forming the metal line further comprises:
covering an insulating layer on the side wall of the active passivation layer;
and manufacturing a metal lead in the connecting wire window of the insulating layer so as to electrically connect the transparent conductive film with the control circuit.
9. An image sensor, comprising:
an active passivation layer including charge storage regions;
a transparent conductive film covering the active passivation layer;
an insulating layer covering the sidewall of the active passivation layer;
a metal wire electrically connecting the transparent conductive film and the control circuit.
10. The image sensor of claim 9, wherein the first dielectric layer is made of silicon dioxide or silicon oxynitride, and the thickness of the first dielectric layer is 1nm to 20 nm.
11. The image sensor as claimed in claim 9, wherein the second dielectric layer is made of silicon nitride, graphene or zinc oxide, and the thickness of the charge storage layer is 5nm-40 nm.
12. The image sensor as claimed in claim 9, wherein the third dielectric layer is made of silicon dioxide, hafnium oxide, aluminum oxide or lanthanum oxide, and the thickness of the third dielectric layer is 1nm-40 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011371363.8A CN114582897A (en) | 2020-11-30 | 2020-11-30 | Preparation method of image sensor and image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011371363.8A CN114582897A (en) | 2020-11-30 | 2020-11-30 | Preparation method of image sensor and image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114582897A true CN114582897A (en) | 2022-06-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011371363.8A Pending CN114582897A (en) | 2020-11-30 | 2020-11-30 | Preparation method of image sensor and image sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114582897A (en) |
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2020
- 2020-11-30 CN CN202011371363.8A patent/CN114582897A/en active Pending
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