CN114566468B - Semiconductor device with protection function - Google Patents

Semiconductor device with protection function Download PDF

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Publication number
CN114566468B
CN114566468B CN202210465202.8A CN202210465202A CN114566468B CN 114566468 B CN114566468 B CN 114566468B CN 202210465202 A CN202210465202 A CN 202210465202A CN 114566468 B CN114566468 B CN 114566468B
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semiconductor device
parts
fixedly connected
protection
protection function
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CN202210465202.8A
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CN114566468A (en
Inventor
王萍
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Rizhao Ruida Electronic Technology Co ltd
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Shenzhen Zhengweige Intelligent Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Packaging Frangible Articles (AREA)

Abstract

The invention discloses a semiconductor device with a protection function, and particularly relates to the technical field of semiconductor devices. The device can cover the pins through the protection device, effectively prevents the problems of abrasion and easy-to-break and damage caused by the fact that external force directly acts on the pins, reduces the loss, can protect the pins, can realize the closed protection effect on the semiconductor device through the closing of the two protection devices when the semiconductor device is installed, and is easy to disassemble and replace when the protection device is damaged, so that the device can realize the use effect of multiple functions by adopting the protection device, thereby achieving the reasonable application of resources and further avoiding the waste problem.

Description

Semiconductor device with protection function
Technical Field
The present invention relates to the field of semiconductor device technologies, and more particularly, to a semiconductor device with a protection function.
Background
The semiconductor device is an electronic device having a conductivity between a good conductor and an insulator, and performing a specific function by utilizing the specific electrical characteristics of a semiconductor material, and is used for generating, controlling, receiving, converting, amplifying a signal and performing energy conversion.
At present, semiconductor device among the prior art is when transporting, because a plurality of pins all directly expose externally, receive other exogenic action easily and produce wearing and tearing, buckle even the phenomenon of damage, so need use purpose-made packing carton to pack, and when semiconductor device installs, need take off the packing carton, not only cause the waste, and the semiconductor device surface also receives exogenic damage easily, and quick replacement not convenient for, semiconductor device radiating effect and support intensity among the prior art are not ideal enough simultaneously, consequently, it has important meaning to research a new semiconductor device that has safeguard function and solve above-mentioned problem.
Disclosure of Invention
In order to overcome the above defects in the prior art, the present invention provides a semiconductor device with a protection function, and the technical problem to be solved by the present invention is: semiconductor device among the prior art is when transporting, because a plurality of pins all are direct to expose externally, receive other exogenic actions easily and produce wearing and tearing, buckle the phenomenon of damage even, so need use purpose-made packing carton to pack, and when semiconductor device installs, need take off the packing carton, not only cause the waste, the semiconductor device surface also receives the exogenic damage easily moreover, and quick replacement not convenient for, semiconductor device radiating effect among the prior art and the not ideal problem of support intensity are all enough simultaneously.
In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides a semiconductor device with safeguard function, includes semiconductor device, purpose-built packaging layer and two protector, purpose-built packaging layer sets up the top at the semiconductor device surface, logical groove has been seted up at the top of purpose-built packaging layer surface, the both sides that lead to the groove surface all are provided with the opening, two first constant head tank, two have been seted up to the right flank that leads to the inslot wall first constant head tank is located the outside of two second constant head tanks, two the right flank that leads to the inslot wall is seted up to the second constant head tank, both sides all are provided with a plurality of pin around the semiconductor device surface.
The protection device comprises a protection frame and an elastic positioning structure, wherein the pins are arranged in the protection frame, the elastic positioning structure is arranged in a through groove through an opening, the elastic positioning structure is arranged in a first positioning groove, two ends of the elastic positioning structure are fixedly connected with one side of the outer surface of the protection frame, the protection frame is arranged on the outer surface of a semiconductor device, the upper surface of the inner wall of the protection frame is in lap joint with the top of the outer surface of a special packaging layer, the top of the outer surface of the protection frame is fixedly connected with the bottom of the outer surface of the second heat conducting strip, and the bottom of the outer surface of the protection frame is fixedly connected with the top of the outer surface of the first heat conducting strip.
As a further scheme of the invention: the outer surface of the semiconductor device is fixedly connected with the two guide strips respectively, and the two guide strips are located on the left side and the right side of the outer surface of the semiconductor device respectively.
As a further scheme of the invention: the left and right sides of protection frame inner wall has all seted up the guide way, two the inner wall of guide way respectively with the surperficial sliding connection of two gibs.
As a further scheme of the invention: the bottom of the outer surface of the first heat-conducting fin is fixedly connected with the tops of the outer surfaces of the energy absorbing layers, and the top of the outer surface of the second heat-conducting fin is fixedly connected with the bottoms of the outer surfaces of the temperature-sensitive color changing layers.
As a further scheme of the invention: the elastic positioning structure comprises a long rod and a sleeve, the two ends of the long rod are fixedly connected with one side of the outer surface of the protection frame, and the sleeve is connected to the outer surface of the long rod in a sliding mode.
As a further scheme of the invention: the two sides of the outer surface of the long rod are fixedly connected with the inner surfaces of the two annular blocks respectively, one side of the outer surface of one of the annular blocks is fixedly connected with one end of the spring, and the other end of the spring is fixedly connected with one side of the outer surface of the sleeve.
As a further scheme of the invention: the bottom of sleeve surface and the top fixed connection of connecting strip surface, the bottom of connecting strip surface and the top fixed connection of rectangular slab surface, the rectangular slab sets up in first constant head tank, the top of sleeve surface and the bottom fixed connection of lug surface.
The preparation method of the special packaging layer comprises the following steps:
s1, weighing the following raw materials in parts by mass: 3-8 parts of nano silicon dioxide, 2-3 parts of silane coupling agent, 60-70 parts of bisphenol A epoxy resin, 3-5 parts of high-strength powder, 3-5 parts of high-thermal-conductivity powder, 1-3 parts of aluminum isopropoxide, 0.5-0.8 part of acetylacetone, 1-1.5 parts of tetrabutyl titanate, 1-1.2 parts of butyl glycidyl ether, 2-3 parts of antioxidant, 1.5-2.3 parts of stabilizer, 0.8-1.2 parts of ethylene copolymer, 1-3 parts of chopped glass fiber, 1-3 parts of curing agent and 1-3 parts of ethoxylated aliphatic alkylamine antistatic agent.
S2, mixing, grinding and dispersing the nano silicon dioxide and the silane coupling agent for 20-30min, then adding the bisphenol A epoxy resin, continuing mixing for 10-15 min, and then adding the high-strength powder and the high-thermal-conductivity powder to obtain a first mixture.
S3, putting aluminum isopropoxide, acetylacetone and tetrabutyl titanate into butyl glycidyl ether, mixing for 20-30min, adding an antioxidant, a stabilizer and an ethylene copolymer, sealing, ultrasonically stirring and mixing for 3-5h to obtain a second mixture.
S4, uniformly putting the prepared mixture I and the mixture II into a mixing device, adding chopped glass fiber and an ethoxylated aliphatic alkylamine antistatic agent, putting a curing agent, continuously stirring and mixing for 20-30min, keeping the temperature of the rubber material, carrying out vacuum defoaming treatment, pouring the defoamed rubber material into a mold, placing the semiconductor device inside, and curing to obtain the special packaging layer.
The high heat-conducting powder is one or a mixture of more of nano alumina powder, nano titanium dioxide, aluminum nitride powder and boron nitride powder, and the particle size is 330-420 meshes.
The stabilizer is bis (2, 2,6, 6-tetramethyl-4-piperidyl) sebacate, the antioxidant is 6-tertiary butyl-4-methylphenol, the high-strength powder is high-carbon flake graphite with the carbon content of 95-99%, and the particle size is 280-460 meshes.
The invention has the beneficial effects that:
1. the device can cover the pins through the protection device, effectively prevents the problems of abrasion and easy-to-break damage caused by external force directly acting on the pins and bending of the pins, reduces the loss, can protect the pins, can realize the closed protection effect on the semiconductor device by closing the two protection devices when the semiconductor device is installed, and is easy to disassemble and replace when the protection device is damaged, so that the device can realize the use effect of multiple functions by adopting the protection device, achieves the reasonable application of resources and further avoids the waste problem;
2. according to the invention, the protective frame, the first heat conducting fins and the second heat conducting fins are arranged, and the protective frame is made of materials with good heat conductivity, so that when a semiconductor device generates heat, the protective frame can play a role of heat conduction, and meanwhile, the first heat conducting fins and the second heat conducting fins can disperse and guide out the heat, so that the heat dissipation effect of the semiconductor device is more obvious, and the first heat conducting fins and the second heat conducting fins are arranged in a triangular continuous bending manner, and the support strength can be further increased according to the principle that a triangle has stability;
3. according to the semiconductor refrigeration piece, the temperature-sensitive color changing layer and the energy absorption layer are arranged, when the first heat conducting sheet is subjected to impact force, the impact force can be transmitted to the energy absorption layer by the first heat conducting sheet, so that the energy absorption layer can generate plastic deformation, and further the energy absorption layer can absorb and offset the impact force, so that the semiconductor refrigeration piece can be buffered and protected, and the temperature-sensitive color changing layer can change color at high temperature, so that the heat dissipation state of a semiconductor device can be quickly judged, and the problem that a person is scalded due to hand touch under the unknown condition is solved.
Drawings
FIG. 1 is a schematic perspective view of the present invention;
FIG. 2 is a schematic illustration of a three-dimensional explosive structure according to the present invention;
FIG. 3 is a schematic view of the closed configuration of the guard of the present invention;
FIG. 4 is a schematic three-dimensional structure of a semiconductor device according to the present invention;
FIG. 5 is a perspective view of the protective device of the present invention;
FIG. 6 is a schematic three-dimensional structure of the elastic positioning structure of the present invention;
FIG. 7 is a schematic structural diagram of a special packaging layer mold according to the present invention;
in the figure: the packaging structure comprises a semiconductor device 1, 2 pins, a special packaging layer 3, a guide strip 4, a protective device 5, a protective frame 51, a first heat conducting strip 52, a second heat conducting strip 53, a temperature-sensitive color changing layer 54, an energy absorbing layer 55, an elastic positioning structure 56, a long strip rod 561, a ring-shaped block 562, a connecting strip 563, a long strip plate 564, a sleeve 565, a lug 566, a 567 spring, a guide groove 57, a through groove 6, an opening 7, a first positioning groove 8 and a second positioning groove 9.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1-7, the present invention provides a semiconductor device with a protection function, comprising a semiconductor device 1, a specially-made packaging layer 3 and two protection devices 5, wherein the specially-made packaging layer 3 is disposed on top of an outer surface of the semiconductor device 1, a through-slot 6 is disposed on top of the outer surface of the specially-made packaging layer 3, and the strip plate 564 can be guided by disposing the through-slot 6, so that the strip plate 564 can slide smoothly, openings 7 are disposed on both sides of the outer surface of the through-slot 6, and the strip plate 564 can be placed inside the through-slot 6 by disposing the openings 7, two first positioning slots 8 are disposed on a right side surface of an inner wall of the through-slot 6, and the first positioning slots 8 can provide fixing points for the strip plate 564 by disposing the first positioning slots 8, the two first positioning slots 8 are disposed outside the two second positioning slots 9, and the two second positioning slots 9 are disposed on a right side surface of the inner wall of the through-slot 6, by providing the second positioning groove 9, the second positioning groove 9 can provide a fixed insertion point for the strip 564, and the front and rear sides of the outer surface of the semiconductor device 1 are provided with the plurality of pins 2.
The protection device 5 comprises a protection frame 51 and an elastic positioning structure 56, the elastic positioning structure 56 is arranged, the elastic positioning structure 56 is clamped into the first positioning groove 8 to lock the position of the protection frame 51, so that the sliding deviation of the protection frame 51 can be avoided, the protection frame 51 is arranged to effectively prevent external force from directly acting on the pins 2 to cause the problems of abrasion and easy breakage and breakage of the pins 2 due to bending by effectively preventing the external force from acting on the pins 2, the loss of the pins is reduced, the protection frame 51 can not only protect the pins 2, but also can realize the closed protection effect on the semiconductor device 1 by closing the two protection frames 51 when the semiconductor device 1 is installed, meanwhile, the protection frame 51 is easy to detach and replace when the protection frame 51 is damaged, the protection frame 51 is made of a material with good thermal conductivity, and further, the protection frame 51 can play a thermal conduction effect when the semiconductor device 1 generates heat, the plurality of pins 2 are arranged in the protective frame 51, the elastic positioning structure 56 is arranged in the through groove 6 through the opening 7, the elastic positioning structure 56 is arranged in the first positioning groove 8, two ends of the elastic positioning structure 56 are fixedly connected with one side of the outer surface of the protective frame 51, the protective frame 51 is arranged on the outer surface of the semiconductor device 1, the upper surface of the inner wall of the protective frame 51 is lapped with the top of the outer surface of the special packaging layer 3, the top of the outer surface of the protective frame 51 is fixedly connected with the bottom of the outer surface of the second heat conducting fin 53, the first heat conducting fin 52 and the second heat conducting fin 53 can disperse and guide out heat through arranging the first heat conducting fin 52 and the second heat conducting fin 53, so that the heat dissipation effect of the semiconductor device 1 is more obvious, the first heat conducting fin 52 and the second heat conducting fin 53 are arranged in a triangular continuous bending manner, and the support strength can be further increased according to the principle that a triangle has stability, the bottom of the outer surface of the protective frame 51 is fixedly connected with the top of the outer surface of the first heat-conducting fin 52.
As shown in fig. 1 and 5, the outer surface of the semiconductor device 1 is fixedly connected to the two guide bars 4, the two guide bars 4 are located on the left and right sides of the outer surface of the semiconductor device 1, the guide grooves 57 are formed on the left and right sides of the inner wall of the protection frame 51, the protection frame 51 can slide stably on the surfaces of the guide bars 4 through the wire grooves by arranging the guide bars 4 and the guide grooves 57, the inner walls of the two guide grooves 57 are slidably connected to the surfaces of the two guide bars 4, respectively, the bottom of the outer surface of the first heat conduction sheet 52 is fixedly connected to the tops of the outer surfaces of the energy absorption layers 55, the energy absorption layer 55 is arranged, and when the first heat conduction sheet 52 is impacted, the first heat conduction sheet 52 can transmit the impact force to the energy absorption layer 55, so that the energy absorption layer 55 can generate plastic deformation, and the energy absorption layer 55 can absorb the impact force, thereby playing a role of buffering protection for the semiconductor refrigeration sheet, the top of second conducting strip 53 surface and the bottom fixed connection of a plurality of temperature sensing discoloration layer 54 surface through setting up temperature sensing discoloration layer 54, and through temperature sensing discoloration layer 54 when the high temperature, can produce and change colour, and then can the rapid judgement semiconductor device 1's heat dissipation state, avoid personnel touch the problem that leads to the scald under the condition of not knowing.
As shown in fig. 6, the elastic positioning structure 56 includes a bar 561 and a sleeve 565, two ends of the bar 561 are fixedly connected to one side of the outer surface of the protection frame 51, the sleeve 565 is slidably connected to the outer surface of the bar 561, the bar 561 can support the sleeve 565 by disposing the bar 561, and at the same time, the bar 561 can guide the sleeve 565, so as to ensure the smooth sliding of the sleeve 565, two sides of the outer surface of the bar 561 are fixedly connected to the inner surfaces of two annular blocks 562, respectively, one side of the outer surface of one of the annular blocks 562 is fixedly connected to one end of a spring 567, the spring 567 is disposed so that the elastic force of the spring 567 can drive the bar 564 to smoothly return, the other end of the spring 567 is fixedly connected to one side of the outer surface of the sleeve 565, the bottom of the outer surface of the sleeve 565 is fixedly connected to the top of the outer surface of the connecting bar 563, and the bottom of the outer surface of the connecting bar 563 is fixedly connected to the top of the outer surface of the strip 564, the elongated strip 564 is disposed in the first positioning groove 8, and the top of the outer surface of the sleeve 565 is fixedly connected to the bottom of the outer surface of the projection 566, and the projection 566 is disposed so that the projection 566 can provide a force application point for a worker, thereby facilitating the control of the operation of the sleeve 565.
The preparation method of the special packaging layer 3 comprises the following steps:
s1, weighing the following raw materials in parts by mass: 3-8 parts of nano silicon dioxide, 2-3 parts of silane coupling agent, 60-70 parts of bisphenol A epoxy resin, 3-5 parts of high-strength powder, 3-5 parts of high-thermal-conductivity powder, 1-3 parts of aluminum isopropoxide, 0.5-0.8 part of acetylacetone, 1-1.5 parts of tetrabutyl titanate, 1-1.2 parts of butyl glycidyl ether, 2-3 parts of antioxidant, 1.5-2.3 parts of stabilizer, 0.8-1.2 parts of ethylene copolymer, 1-3 parts of chopped glass fiber, 1-3 parts of curing agent and 1-3 parts of ethoxylated aliphatic alkylamine antistatic agent.
S2, mixing, grinding and dispersing the nano silicon dioxide and the silane coupling agent for 20-30min, then adding the bisphenol A epoxy resin, continuing mixing for 10-15 min, and then adding the high-strength powder and the high-thermal-conductivity powder to obtain a first mixture.
S3, putting aluminum isopropoxide, acetylacetone and tetrabutyl titanate into butyl glycidyl ether, mixing for 20-30min, adding an antioxidant, a stabilizer and an ethylene copolymer, sealing, ultrasonically stirring and mixing for 3-5h to obtain a second mixture.
S4, uniformly putting the prepared mixture I and the mixture II into a mixing device, adding chopped glass fibers and an ethoxylated aliphatic alkylamine antistatic agent, adding the antistatic agent to achieve better antistatic property, putting a curing agent, continuously stirring and mixing for 20-30min, keeping the temperature of the rubber material, performing vacuum defoaming treatment, pouring the defoamed rubber material into a mold, and placing the semiconductor device 1 inside to cure the semiconductor device to obtain the specially-made packaging layer 3.
The high heat-conducting powder is one or a mixture of more of nano alumina powder, nano titanium dioxide, aluminum nitride powder and boron nitride powder, the granularity is 330-420 meshes, and the heat-conducting property of the special packaging layer 3 is greatly improved by adding the high heat-conducting powder.
The stabilizer is bis 2,2,6, 6-tetramethyl-4-piperidyl sebacate, the surface of the stabilizer has better compactness by adding the stabilizer, the antioxidant is 6-tertiary butyl-4-methylphenol, the antioxidant is added, so that the stabilizer has good oxidation resistance and ageing resistance, the high-strength powder is high-carbon crystalline flake graphite with the carbon content of 95-99%, the granularity is 280-mesh and 460-mesh, and the impact strength can be improved by adding the high-strength powder.
The working principle of the invention is as follows:
s1, during protection, the bump 566 is pulled, so that the bump 566 drives the sleeve 565 to slide on the surface of the bar 561, the sleeve 565 drives the spring 567 to deform, the position of the strip 564 corresponds to the position of the opening 7, at this time, the strip 564 is pushed into the opening 7, so that the strip 564 slides in the through groove 6, so that the protection frame 51 is sleeved on the surface of the semiconductor device 1, when the strip 564 corresponds to the position of the first positioning groove 8, the bump 566 is loosened at this time, so that the elastic force of the spring 567 can drive the sleeve 565 to move to return, so that the sleeve 565 drives the strip 564 to return through the connecting bar 563, so that the strip 564 can be snapped into the first positioning groove 8, so that the position of the protection frame 51 is fixed, and the protection frame 51 can cover and protect the pin 2;
s2, during installation, the lug 566 is pulled again, so that the lug 566 drives the sleeve 565 and the connecting bar 563 to move, the spring 567 deforms, the strip plate 564 is separated from the first positioning groove 8, the protection frame 51 continues to be pushed to move, the strip plate 564 slides in the through groove 6, when the strip plate 564 corresponds to the second positioning groove 9, the lug 566 is loosened, at the moment, the elastic force of the spring 567 can drive the connecting bar 563 to reset through the sleeve 565, the strip plate 564 can be smoothly clamped into the second positioning groove 9, the protection frame 51 at the other position is operated again, so that the two protection frames 51 are closed, the protection frame 51 protects the semiconductor device 1, and at the moment, the pin 2 can be installed.
The points to be finally explained are: first, in the description of the present application, it should be noted that, unless otherwise specified and limited, the terms "mounted," "connected," and "connected" should be understood broadly, and may be a mechanical connection or an electrical connection, or a communication between two elements, and may be a direct connection, and "upper," "lower," "left," and "right" are only used to indicate a relative positional relationship, and when the absolute position of the object to be described is changed, the relative positional relationship may be changed;
secondly, the method comprises the following steps: in the drawings of the disclosed embodiments of the invention, only the structures related to the disclosed embodiments are referred to, other structures can refer to common designs, and the same embodiment and different embodiments of the invention can be combined with each other without conflict;
and finally: the above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that are within the spirit and principle of the present invention are intended to be included in the scope of the present invention.

Claims (10)

1. A semiconductor device with protection function comprises a semiconductor device (1), a special packaging layer (3) and two protection devices (5), and is characterized in that: the specially-made packaging layer (3) is arranged at the top of the outer surface of the semiconductor device (1), a through groove (6) is formed in the top of the outer surface of the specially-made packaging layer (3), openings (7) are formed in two sides of the outer surface of the through groove (6), two first positioning grooves (8) are formed in the right side face of the inner wall of the through groove (6), the two first positioning grooves (8) are located on the outer sides of two second positioning grooves (9), the two second positioning grooves (9) are formed in the right side face of the inner wall of the through groove (6), and a plurality of pins (2) are arranged on the front side and the rear side of the outer surface of the semiconductor device (1);
the protection device (5) comprises a protection frame (51) and an elastic positioning structure (56), a plurality of pins (2) are arranged in the protection frame (51), the elastic positioning structure (56) is arranged in the through groove (6) through the opening (7), the elastic positioning structure (56) is arranged in the first positioning groove (8), two ends of the elastic positioning structure (56) are fixedly connected with one side of the outer surface of the protective frame (51), the protective frame (51) is arranged on the outer surface of the semiconductor device (1), the upper surface of the inner wall of the protective frame (51) is overlapped with the top of the outer surface of the special packaging layer (3), the top of the outer surface of the protective frame (51) is fixedly connected with the bottom of the outer surface of the second heat-conducting fin (53), the bottom of the outer surface of the protective frame (51) is fixedly connected with the top of the outer surface of the first heat-conducting fin (52).
2. A semiconductor device having a protection function according to claim 1, wherein: the outer surface of the semiconductor device (1) is fixedly connected with the two guide strips (4) respectively, and the two guide strips (4) are located on the left side and the right side of the outer surface of the semiconductor device (1) respectively.
3. A semiconductor device having a protection function according to claim 2, characterized in that: guide grooves (57) are formed in the left side and the right side of the inner wall of the protective frame (51), and the inner wall of each guide groove (57) is connected with the surfaces of the two guide strips (4) in a sliding mode.
4. A semiconductor device having a protection function according to claim 1, wherein: the bottom of the outer surface of the first heat-conducting sheet (52) is fixedly connected with the tops of the outer surfaces of the energy absorbing layers (55), and the top of the outer surface of the second heat-conducting sheet (53) is fixedly connected with the bottoms of the outer surfaces of the temperature-sensitive color changing layers (54).
5. A semiconductor device having a protection function according to claim 1, wherein: the elastic positioning structure (56) comprises a long rod (561) and a sleeve (565), two ends of the long rod (561) are fixedly connected with one side of the outer surface of the protection frame (51), and the sleeve (565) is connected to the outer surface of the long rod (561) in a sliding mode.
6. A semiconductor device having a protection function according to claim 5, wherein: two sides of the outer surface of the long rod (561) are fixedly connected with the inner surfaces of the two annular blocks (562) respectively, one side of the outer surface of one of the annular blocks (562) is fixedly connected with one end of a spring (567), and the other end of the spring (567) is fixedly connected with one side of the outer surface of the sleeve (565).
7. A semiconductor device having a protection function according to claim 6, wherein: the bottom of the outer surface of the sleeve (565) is fixedly connected with the top of the outer surface of the connecting strip (563), the bottom of the outer surface of the connecting strip (563) is fixedly connected with the top of the outer surface of the strip plate (564), the strip plate (564) is arranged in the first positioning groove (8), and the top of the outer surface of the sleeve (565) is fixedly connected with the bottom of the outer surface of the lug (566).
8. A semiconductor device having a protection function according to claim 1, wherein: the preparation method of the special packaging layer (3) comprises the following steps:
s1, weighing the following raw materials in parts by mass: 3-8 parts of nano silicon dioxide, 2-3 parts of silane coupling agent, 60-70 parts of bisphenol A epoxy resin, 3-5 parts of high-strength powder, 3-5 parts of high-thermal-conductivity powder, 1-3 parts of aluminum isopropoxide, 0.5-0.8 part of acetylacetone, 1-1.5 parts of tetrabutyl titanate, 1-1.2 parts of butyl glycidyl ether, 2-3 parts of antioxidant, 1.5-2.3 parts of stabilizer, 0.8-1.2 parts of ethylene copolymer, 1-3 parts of chopped glass fiber, 1-3 parts of curing agent and 1-3 parts of ethoxylated aliphatic alkylamine antistatic agent;
s2, mixing, grinding and dispersing the nano silicon dioxide and the silane coupling agent for 20-30min, then adding bisphenol A epoxy resin, continuing mixing for 10-15 min, and then adding high-strength powder and high-thermal-conductivity powder to obtain a first mixture;
s3, putting aluminum isopropoxide, acetylacetone and tetrabutyl titanate into butyl glycidyl ether, mixing for 20-30min, adding an antioxidant, a stabilizer and an ethylene copolymer, and sealing, ultrasonically stirring and mixing for 3-5h to obtain a second mixture;
s4, uniformly putting the prepared mixture I and the mixture II into a mixing device, adding chopped glass fiber and an ethoxylated aliphatic alkylamine antistatic agent, putting a curing agent, continuously stirring and mixing for 20-30min, keeping the temperature of the rubber material, carrying out vacuum defoaming treatment, pouring the defoamed rubber material into a mold, placing the semiconductor device (1) inside, and curing to obtain the special packaging layer (3).
9. A semiconductor device having a protection function according to claim 8, wherein: the high heat-conducting powder is one or a mixture of more of nano alumina powder, nano titanium dioxide, aluminum nitride powder and boron nitride powder, and the particle size is 330-420 meshes.
10. A semiconductor device having a protection function according to claim 8, wherein: the stabilizer is bis (2, 2,6, 6-tetramethyl-4-piperidyl) sebacate, the antioxidant is 6-tertiary butyl-4-methylphenol, the high-strength powder is high-carbon flake graphite with the carbon content of 95-99%, and the particle size is 280-460 meshes.
CN202210465202.8A 2022-04-29 2022-04-29 Semiconductor device with protection function Active CN114566468B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006339239A (en) * 2005-05-31 2006-12-14 Toyota Motor Corp Semiconductor device
JP2015220382A (en) * 2014-05-20 2015-12-07 三菱電機株式会社 Power module
JP2017054842A (en) * 2015-09-07 2017-03-16 株式会社東芝 Wiring board, semiconductor device, and semiconductor package
CN113380717A (en) * 2021-04-28 2021-09-10 徐艳超 Large radiating fin semiconductor power discrete device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006339239A (en) * 2005-05-31 2006-12-14 Toyota Motor Corp Semiconductor device
JP2015220382A (en) * 2014-05-20 2015-12-07 三菱電機株式会社 Power module
JP2017054842A (en) * 2015-09-07 2017-03-16 株式会社東芝 Wiring board, semiconductor device, and semiconductor package
CN113380717A (en) * 2021-04-28 2021-09-10 徐艳超 Large radiating fin semiconductor power discrete device

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