CN114559302B - Polishing solution, indium phosphide polishing device and method - Google Patents
Polishing solution, indium phosphide polishing device and method Download PDFInfo
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- CN114559302B CN114559302B CN202210199935.1A CN202210199935A CN114559302B CN 114559302 B CN114559302 B CN 114559302B CN 202210199935 A CN202210199935 A CN 202210199935A CN 114559302 B CN114559302 B CN 114559302B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of polishing, and particularly relates to polishing solution, an indium phosphide polishing device and a method, wherein the polishing solution comprises base solution, metal powder and abrasive material which are mixed in the base solution; the mass ratio of the metal powder to the abrasive is 1 to 2 to 4, and the metal property of the metal powder is weaker than that of indium. On one hand, the surface of the indium phosphide is oxidized through metal contact corrosion reaction, so that the hardness of the surface of the indium phosphide is reduced, toxic gas generated by using acidic substances or alkaline substances is prevented from harming the safety of workers or polluting the environment, and meanwhile, the polishing solution is prevented from corroding a polishing device.
Description
Technical Field
The invention belongs to the technical field of polishing, and particularly relates to polishing solution, an indium phosphide polishing device and an indium phosphide polishing method.
Background
Indium phosphide (InP) is one of important group iii-v compound semiconductor materials, and is a new-generation electronic functional material following Si and GaAs. Indium phosphide has many advantages: the direct transition type energy band structure has high electro-optic conversion efficiency; the working temperature is high (400-450 ℃); has strong radiation resistance; high conversion efficiency as a solar cell material, and the like. The indium phosphide has high electron mobility, and has a wide application prospect in a frequency range of dozens of GHZ as a high-frequency InP-based device. The bandwidth of the indium phosphide is 1.4eV, and the indium phosphide has high radiation resistance, can be prepared into a solar cell with high conversion efficiency and is applied to the fields of satellites and the like. With the rapid development of HEMT technology and application in the 80 s and the great development of optical fiber communication industry, the scarcity of photoelectric devices and the great demand of solar cells, the research and development of InP materials closely related to the technology are greatly promoted.
As semiconductor technology continues to develop, semiconductor device structures continue to decrease, and thus how to provide globally planarized polishing and grinding technology in the semiconductor wafer manufacturing process is an important issue. Currently, most of the chemical mechanical polishing methods are used to polish semiconductor wafers, and in the chemical mechanical polishing method, a polishing solution is usually added to oxidize a polished surface of a semiconductor device, and then the oxide layer is removed by a mechanical material, i.e., an oxidation reaction is continuously generated during the polishing process to weaken the surface hardness of the semiconductor device to form a softened surface layer, and then the oxide layer is removed by the mechanical action of an abrasive to obtain a desired polished surface.
In the prior art, a polishing solution generally needs to be prepared to be acidic or alkaline, indium phosphide can generate phosphine toxic gas under an acidic condition, and if alkaline oxidants such as sodium hypochlorite are adopted, chlorine toxic gas can be generated in the polishing process, so that the safety of workers is seriously harmed.
Disclosure of Invention
The invention provides a polishing solution, an indium phosphide polishing device and a method for overcoming at least one defect in the prior art, which can avoid toxic gas generated in the polishing process, thereby realizing efficient and green semiconductor device polishing.
In order to solve the technical problems, the invention adopts the technical scheme that:
the polishing solution is used for polishing indium phosphide, and comprises a base solution, metal powder and an abrasive which are mixed in the base solution; the mass ratio of the metal powder to the grinding material is (1): 4, the metal powder is weaker than indium.
The metal powder in the scheme is weaker than indium in metal property, so when the polishing solution is contacted with indium phosphide, the polishing solution and the indium phosphide are subjected to metal contact corrosion reaction, and the metal powder oxidizes the surface of the indium phosphide to form an oxide layer with the hardness lower than that of the indium phosphide, so that the oxide layer can be easily removed by subsequent grinding materials; because the polishing solution does not contain acidic or alkaline substances, no toxic gas is generated when the polishing solution is used for polishing the indium phosphide, the polishing equipment is not corroded and damaged, and green and efficient indium phosphide polishing can be realized.
Preferably, the powder material also comprises an auxiliary agent for promoting the intermetallic electron transfer efficiency, and the mass ratio of the auxiliary agent to the metal powder is 1.
Preferably, the auxiliary agent includes a hole-trapping agent and an electrolyte, and the mass ratio of the hole-trapping agent to the electrolyte is 1.
This technical scheme still provides an indium phosphide burnishing device, including the frame and all set up the polishing dish in the frame, work piece clamping component, polishing solution supply assembly, a drive arrangement, a drive assembly, a drive arrangement links to each other and drives polishing dish and work piece clamping component relative rotation with the polishing dish, a drive assembly links to each other and drives work piece clamping component for the polishing dish motion with work piece clamping component, polishing solution supply assembly splendid attire has foretell polishing solution, polishing solution supply assembly is provided with the conveyer pipe of carrying polishing solution to the polished surface of polishing dish, work piece clamping component one end links to each other with the frame, the other end be close to the polished surface of polishing dish and have the clearance between the working surface.
According to the scheme, polishing liquid is conveyed to the polishing disc through the polishing liquid supply assembly, the first driving device drives the polishing disc to rotate, the driving assembly drives the workpiece clamping assembly to move relative to the polishing disc, so that a workpiece on the workpiece clamping device is in contact with the polishing disc and the polishing liquid on the polishing disc, metal contact corrosion reaction occurs in the contact process of the workpiece and the polishing liquid, the surface of the workpiece is oxidized into an oxide layer with lower hardness, the oxide layer is removed by friction in the relative movement process of the polishing disc and the workpiece, and thus the metal contact corrosion reaction and the friction process are continuously and alternately carried out, and polishing and grinding of the workpiece are realized; because the polishing solution and the workpiece are subjected to metal contact corrosion reaction, toxic gas is not generated, and therefore, efficient green polishing can be realized on the indium phosphide.
Preferably, the polishing solution supply assembly comprises a peristaltic pump and a container containing the polishing solution, and the delivery pipe is communicated with the container through the peristaltic pump.
Preferably, the polishing liquid supply device further comprises a stirring device connected to the container and stirring the polishing liquid in the container.
Preferably, the rack is a box structure provided with a cavity, and the polishing disk, the workpiece clamping assembly, the polishing liquid supply assembly and the first driving device are all arranged in the cavity; the system also comprises a tail gas treatment system for communicating the cavity with the external environment.
The technical scheme also provides a polishing method of indium phosphide, which comprises the following steps:
s1: preparing the polishing solution and placing the polishing solution in a polishing solution supply assembly;
s2: installing a workpiece on the workpiece clamping component, wherein the surface to be polished of the workpiece is close to the working surface of the polishing disc;
s3: the polishing solution supply assembly conveys the polishing solution to the working surface of the polishing disc;
s4: the driving assembly drives the workpiece clamping assembly to move until the workpiece is abutted against the polishing disc, and the polishing liquid on the polishing disc and the surface of the workpiece are subjected to metal contact corrosion reaction to form an oxide layer on the surface of the workpiece;
s5: the first driving device drives the polishing disc to rotate, and an oxide layer on the surface of the workpiece is removed to obtain the polished workpiece.
According to the scheme, metal powder in polishing liquid and a workpiece are subjected to metal contact corrosion reaction, the surface of the workpiece is oxidized into an oxide layer with lower hardness, then, a polishing disc is rotated, abrasive in the polishing liquid and the surface of the workpiece are rubbed to remove the oxide layer on the surface of the workpiece, and after the oxide layer on the surface of the workpiece is stripped, the metal powder is contacted with the surface of the workpiece again to oxidize the surface of the workpiece, although the oxide layer is removed again, the process is continuously repeated along with the relative rotation of the workpiece and the polishing disc, so that the workpiece is polished; because the metal corrosion reaction occurs in the scheme, toxic gases such as phosphine and the like can not be generated, the polishing is more green, efficient and safe.
Preferably, the pressure of the workpiece abutting against the polishing disk in the step S4 is 0.01 to 1MPa.
Preferably, the rotation speed of the polishing disc in the step S5 is 5rpm to 150rpm.
Compared with the prior art, the beneficial effects are:
on one hand, the indium phosphide surface is oxidized through metal contact corrosion reaction, so that the hardness of the indium phosphide surface is reduced, the toxic gas generated by using acidic substances or alkaline substances is prevented from harming the safety of workers or polluting the environment, and meanwhile, the polishing device is prevented from being corroded by polishing solution; on the other hand, the tail gas treatment system provided by the invention can further purify various gases generated in the polishing process, further reduce the probability of environmental pollution caused by the polishing process, and realize green, efficient and efficient indium phosphide polishing.
Drawings
FIG. 1 is a schematic view showing the overall structure of an indium phosphide polishing apparatus according to example 4 of the present invention;
FIG. 2 is a schematic view of a driving assembly, a slide rail, and a workpiece holding assembly of an indium phosphide polishing apparatus according to example 4 of the present invention;
FIG. 3 is a schematic block diagram showing the circuit connection of an indium phosphide polishing apparatus according to example 4 of the present invention;
FIG. 4 is a schematic block diagram showing a flow of an indium phosphide polishing method in example 5 of the present invention;
FIG. 5 is a scanning electron micrograph of the contact etch reaction of the indium phosphide polishing method of example 5 of the present invention.
Detailed Description
The drawings are for illustration purposes only and are not to be construed as limiting the invention; for the purpose of better illustrating the embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted. The positional relationships depicted in the drawings are for illustrative purposes only and are not to be construed as limiting the invention.
The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar components; in the description of the present invention, it should be understood that if there are terms such as "upper", "lower", "left", "right", "long", "short", etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the drawings, it is only for convenience of description and simplicity of description, but does not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationships in the drawings are only used for illustrative purposes and are not to be construed as limitations of the present patent, and specific meanings of the terms may be understood by those skilled in the art according to specific situations.
The technical scheme of the invention is further described in detail by the following specific embodiments in combination with the attached drawings:
example 1:
an embodiment of the polishing solution can be used for polishing an indium phosphide device, and comprises a base solution, and metal powder and an abrasive which are mixed in the base solution; the mass ratio of the metal powder to the abrasive is 1.
The metal powder in this embodiment is preferably aluminum powder, of course, the aluminum powder is only one reference embodiment, and in the specific implementation process, the metal powder may also be a material with weaker metal than indium, such as iron, and is not limited herein.
The particle size of the metal powder is in the range of 0.01 to 10 μm, preferably 1 μm. The metal powder has small particle size, so that after the metal powder is mixed with the base liquid, the metal powder is similar to fluid and has certain fluidity, but has metal characteristics, so that when the polishing liquid is contacted with a workpiece, the metal powder in the polishing liquid and the workpiece are subjected to metal contact corrosion reaction, and the surface of the workpiece cannot be damaged too much due to overlarge pressure and friction force.
Specifically, the reaction process of the aluminum powder and the indium phosphide surface is as follows: electrons are transferred to the surface of the aluminum powder from indium phosphide, the number of electrons on the surface of the indium phosphide is reduced, a large number of holes are accumulated, the indium phosphide is oxidized under the oxidation action of the holes, obvious oxidation cracks appear on the surface, and the specific reaction formula is as follows:
InP+h+→In2++P5+，
i.e. the main component of the oxide layer produced is In 2 O 3 、P 2 O 5 (ii) a Wherein h is + Is a cavity. In addition, the aluminum powder reacts with oxygen in the polishing solution to consume electrons accumulated on the surface. When metal powder of other materials is used, other types of oxides are generated, and detailed description is omitted here.
In addition, the base fluid in this embodiment is one or more of deionized water, silicone oil, mineral oil, and other solvents, and the abrasive material may be diamond, and the particle size is 0.01 μm to 10 μm, preferably 1 μm, but is not limited thereto. Deionized water or silicone oil or mineral oil can not react with metal, and is only used as a carrier for mixing metal powder and abrasive; the diamond has higher hardness, and the diamond with smaller grain diameter is adopted, so that the diamond can be approximately seen as fluid when being mixed in the base solution, the friction action is mainly generated between the workpiece and the abrasive during polishing, and the unnecessary damage of the abrasive to the surface of the workpiece caused by the polishing pressure can be avoided.
In order to facilitate the electron exchange between the metal powder in the polishing solution and the workpiece and improve the electron transfer efficiency between the metal powder and the workpiece, the present embodiment further includes an auxiliary agent, the mass ratio of the auxiliary agent to the metal powder is 1; specifically, the auxiliary agent in this embodiment includes a hole-trapping agent and an electrolyte, and the mass ratio of the hole-trapping agent to the electrolyte is 1.
Example 2:
the present embodiment differs from embodiment 1 only in that the mass ratio of the metal powder to the abrasive in the present embodiment is 1; the mass ratio of the hole scavenger to the electrolyte is 1.
Example 3:
the present example differs from example 1 or example 2 only in that the mass ratio of the metal powder to the abrasive in the present example is 1; the mass ratio of the hole scavenger to the electrolyte is 1.
Example 4:
fig. 1 to 3 show an embodiment of an indium phosphide polishing apparatus, which includes a frame 1, a polishing disk 2, a workpiece holding assembly 3, a polishing slurry supply assembly 4, a first driving device 5, and a driving assembly 6, all of which are disposed on the frame 1, the first driving device 5 is connected to the polishing disk 2 and drives the polishing disk 2 and the workpiece holding assembly 3 to rotate relatively, the driving assembly 6 is connected to the workpiece holding assembly 3 and drives the workpiece holding assembly 3 to move relatively to the polishing disk 2, the polishing slurry supply assembly 4 contains the polishing slurry in embodiment 1, the polishing slurry supply assembly 4 is provided with a delivery pipe 41 for delivering the polishing slurry to the polishing surface of the polishing disk 2, one end of the workpiece holding assembly 3 is connected to the frame 1, and the other end is close to the working surface of the polishing disk 2 and has a gap with the working surface.
Wherein, fixed being provided with polishing pad 21 on polishing dish 2, carry polishing solution to polishing pad 21 on, polishing pad 21's existence can carry out better protection to the work piece, avoids the work piece to push down and polishing dish 2 direct contact and cause too much damage.
The driving assembly 6 in this embodiment includes a second driving device 61, a third driving device 62, and a fourth driving device 63, where the second driving device 61 includes a linear motor 611 and a slider 612, the linear motor 611 is fixedly mounted on the frame 1, the frame 1 is provided with a horizontal slide rail 12, the slider 612 is slidably connected to the slide rail 12, and the linear motor 611 is connected to the slider 612 and drives the slider 612 to slide on the slide rail 12; the third driving device 62 is a cylinder, a base of the cylinder is fixedly mounted at the bottom of the sliding block 612, a flange 621 is fixedly arranged on a telescopic arm of the cylinder, the fourth driving device 63 is a driving motor, the driving motor is mounted on the flange 621, and an output shaft of the driving motor is fixedly connected with the workpiece clamping assembly 3. The second driving device 61 can drive the whole driving assembly 6 to move horizontally on the frame 1 along the slide rail 12, so as to change the position of the workpiece on the polishing disk 2; in addition, the telescopic arm of the cylinder moves to drive the upper fourth driving device 63 of the flange 621 to move up and down, so that the distance between the workpiece and the polishing disc 2 is changed, the workpiece is abutted to the polishing disc 2 to act on polishing liquid, and the polishing pressure can be controlled; the fourth driving device 63 is used for driving the workpiece to rotate, so that the workpiece and the abrasive in the polishing solution are rubbed to remove an oxide layer on the surface of the workpiece.
The polishing liquid supply unit 4 in this embodiment includes a peristaltic pump 42, and a container 43 containing the polishing liquid in embodiment 1, and the delivery pipe 41 is connected to the container 43 via the peristaltic pump 42. The peristaltic pump 42 is mounted on the frame 1, and the polishing liquid in the container 43 is pumped to the surface of the polishing disk 2 through the peristaltic pump 42, which is also convenient to control.
In order to avoid the metal powder and the abrasive in the polishing solution from precipitating and causing the polishing solution to be uneven and affecting the polishing effect, the polishing solution supply device in the embodiment further comprises a stirring device 44, wherein the stirring device 44 is connected with the container 43 and stirs the polishing solution in the container 43, so that the polishing solution is always kept in a uniform state, and the polishing effect is ensured. Alternatively, the stirring device 44 may employ a magnetic stirrer.
The frame 1 in the embodiment is a box structure provided with a cavity 11, and the polishing disc 2, the workpiece clamping component 3, the polishing solution supply component 4 and the first driving device 5 are all arranged in the cavity 11; and the tail gas treatment system 7 is used for communicating the cavity 11 with the external environment. The tail gas treatment system 7 comprises an exhaust fan 71, a first gas pipe 72, a second gas pipe 73 and a filter 74 filled with copper sulfate solution, wherein one end of the first gas pipe 72 is communicated with the cavity 11, and the other end of the first gas pipe is inserted into the copper sulfate solution; an exhaust fan 71 is positioned between the filter device and the cavity 11 and is in communication with the first air duct 72 for feeding the air in the cavity 11 into the filter device; a second air duct 73 communicating the filter 74 with the external environment; in the polishing process, the gas in the cavity 11 is sent into the filter 74 through the exhaust fan 71, filtered by the copper sulfate solution and then discharged into the atmospheric environment, so that the atmospheric environment is prevented from being polluted by tail gas generated in the polishing process, the operation safety is improved, and green and safe indium phosphide polishing is realized. Of course, the filtering of the tail gas by using the copper sulfate solution in this embodiment is only a reference embodiment, and is not to be understood as a limitation to this embodiment, and in the specific implementation process, the air in the cavity 11 may be treated by using other types of solutions or tail gas treatment devices according to the needs.
In this embodiment, a control device 8 may be further disposed outside the frame 1, and the control device 8 is electrically connected to the first driving device 5, the second driving device 61, the third driving device 62, the fourth driving device 63, the peristaltic pump 42, the stirring device 44, and the exhaust fan 71, and is used for controlling the operation of the system and displaying corresponding status information, so as to implement automation of polishing and facilitate an operator to better master the polishing process. Of course, the control device 8 is well known to those skilled in the art and will not be described in detail here.
Example 5:
fig. 4 and 5 show an example of an indium phosphide polishing method using the indium phosphide polishing apparatus of example 4, which comprises the steps of:
s1: preparing the polishing solution in example 1, and placing the polishing solution in a polishing solution supply assembly 4;
s2: installing a workpiece on the workpiece clamping component 3, wherein the surface to be polished of the workpiece is close to the working surface of the polishing disk 2;
s3: the polishing liquid supply assembly 4 is used for conveying polishing liquid to the working surface of the polishing disk 2;
s4: the driving component 6 drives the workpiece clamping component 3 to move until the workpiece is abutted against the polishing disc 2, and the polishing liquid on the polishing disc 2 and the surface of the workpiece are subjected to metal contact corrosion reaction to form an oxide layer on the surface of the workpiece (see fig. 5);
s5: the first driving device 5 drives the polishing disc 2 to rotate, and an oxide layer on the surface of the workpiece is removed, so that the polished workpiece is obtained.
According to the scheme, metal powder in polishing liquid and a workpiece are subjected to metal contact corrosion reaction, the surface of the workpiece is oxidized into an oxide layer with lower hardness, then, by rotating the polishing disc 2, abrasive in the polishing liquid and the surface of the workpiece are subjected to friction, the oxide layer on the surface of the workpiece is removed, and when the oxide layer on the surface of the workpiece is stripped, the metal powder is contacted with the surface of the workpiece again to oxidize the surface of the workpiece, although the oxide layer is removed again, the process is repeated continuously along with the relative rotation of the workpiece and the polishing disc 2, so that the polishing and the grinding of the workpiece are realized; because the metal corrosion reaction occurs in the scheme, toxic gases such as phosphine and the like can not be generated, the polishing is more green, efficient and safe.
In order to ensure that the abrasive can remove the oxide layer on the surface of the workpiece, improve the polishing efficiency, and avoid excessive loss to the workpiece, which leads to reduction in the surface quality of the workpiece and even breakage of the workpiece, the pressure (i.e., polishing pressure) at which the workpiece abuts against the polishing disk 2 in step S4 in this embodiment is 0.01 to 1MPa, and preferably 0.05MPa. The rotation speed of the polishing disk 2 in step S5 in this embodiment is 5rpm to 150rpm, preferably 20rpm. If the polishing pressure and the rotating speed are too low, the removal efficiency of the indium phosphide surface oxide layer is low, and the polishing efficiency is low.
The present invention has been described with reference to flowchart illustrations or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the application, and it is understood that each flow or block of the flowchart illustrations or block diagrams, and combinations of flows or blocks in the flowchart illustrations or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (9)
1. The polishing solution is used for polishing indium phosphide, and is characterized by comprising base solution, metal powder and abrasive which are mixed in the base solution; the mass ratio of the metal powder to the abrasive is 1; the auxiliary agent is used for promoting the electron transfer efficiency between the metal and the workpiece, and the mass ratio of the auxiliary agent to the metal powder is 1.
2. The polishing solution according to claim 1, wherein the auxiliary agent comprises a hole trapping agent and an electrolyte, and the mass ratio of the hole trapping agent to the electrolyte is 1.
3. An indium phosphide polishing device is characterized by comprising a machine frame (1), a polishing disc (2), a workpiece clamping component (3), a polishing liquid supply component (4), a first driving device (5) and a driving component (6), wherein the polishing disc (2), the workpiece clamping component (3), the polishing liquid supply component (4) and the driving component (6) are arranged on the machine frame (1), the first driving device (5) is connected with the polishing disc (2) and drives the polishing disc (2) and the workpiece clamping component (3) to rotate relatively, the driving component (6) is connected with the workpiece clamping component (3) and drives the workpiece clamping component (3) to move relative to the polishing disc (2), the polishing liquid supply component (4) contains the polishing liquid as defined in any one of claims 1 to 2, the polishing liquid supply component (4) is provided with a conveying pipe (41) for conveying the polishing liquid to the polishing surface of the polishing disc (2), one end of the workpiece clamping component (3) is connected with the machine frame (1), the other end of the workpiece clamping component is close to the working surface of the polishing disc (2), and a gap is reserved between the working surface and the working surface.
4. An indium phosphide polishing device as set forth in claim 3, wherein the polishing liquid supply assembly (4) comprises a peristaltic pump (42) and a container (43) containing polishing liquid, and the delivery pipe (41) is communicated with the container (43) through the peristaltic pump (42).
5. An indium phosphide polishing apparatus as set forth in claim 4, wherein said polishing liquid supply means further comprises an agitation means (44), and said agitation means (44) is connected to said container (43) and agitates the polishing liquid in said container (43).
6. An indium phosphide polishing device according to any one of claims 3 to 5, wherein the frame (1) is a box structure provided with a cavity (11), and the polishing disk (2), the workpiece holding assembly (3), the polishing liquid supply assembly (4) and the first drive device (5) are all arranged in the cavity (11); also comprises an exhaust gas treatment system (7) for communicating the cavity (11) with the external environment.
7. A polishing method using the indium phosphide polishing apparatus as set forth in any one of claims 3 to 6, characterized by comprising the steps of:
s1: preparing a polishing liquid according to any one of claims 1 to 2 and placing it in a polishing liquid supply unit (4);
s2: a workpiece is arranged on the workpiece clamping component (3), and the surface to be polished of the workpiece is close to the working surface of the polishing disc (2);
s3: the polishing liquid supply assembly (4) conveys the polishing liquid to the working surface of the polishing disc (2);
s4: the driving assembly (6) drives the workpiece clamping assembly (3) to move until the workpiece is abutted against the polishing disc (2), and the polishing solution on the polishing disc (2) and the surface of the workpiece are subjected to metal contact corrosion reaction to form an oxide layer on the surface of the workpiece;
s5: the first driving device (5) drives the polishing disc (2) to rotate, and an oxide layer on the surface of the workpiece is removed to obtain the polished workpiece.
8. The polishing method according to claim 7, wherein the pressure at which the workpiece abuts against the polishing pad (2) in step S4 is 0.01 to 1MPa.
9. The polishing method according to claim 7 or 8, wherein the rotation speed of the polishing disk (2) in step S5 is 5rpm to 150rpm.
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Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5934980A (en) * | 1997-06-09 | 1999-08-10 | Micron Technology, Inc. | Method of chemical mechanical polishing |
| US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| CN1565676A (en) * | 2003-06-30 | 2005-01-19 | Dcr国际环境服务有限公司 | Deacidizing and aggradating method on metal surface |
| JP5819076B2 (en) * | 2010-03-10 | 2015-11-18 | 株式会社フジミインコーポレーテッド | Polishing composition |
| CN103114323B (en) * | 2013-02-06 | 2016-05-25 | 中国科学院上海微系统与信息技术研究所 | A kind of surface polishing method for GaN single crystalline substrate |
| KR102642825B1 (en) * | 2016-02-16 | 2024-02-29 | 씨엠씨 머티리얼즈 엘엘씨 | Polishing method for group III-V materials |
| CN106281043B (en) * | 2016-08-01 | 2018-05-15 | 广东工业大学 | A kind of magnetorheological chemical mechanical polishing liquid and its application method for SiC single crystal piece |
| CN109280492A (en) * | 2017-07-21 | 2019-01-29 | 天津西美科技有限公司 | A kind of inp wafer polishing fluid |
| KR20200108022A (en) * | 2018-01-11 | 2020-09-16 | 가부시키가이샤 후지미인코퍼레이티드 | Polishing composition |
| CN110281144A (en) * | 2019-07-22 | 2019-09-27 | 苏州大学 | Electricity induction assistant chemical mechanically polishes test device |
| CN112480826A (en) * | 2020-12-15 | 2021-03-12 | 北京国瑞升科技股份有限公司 | Indium phosphide chip polishing solution and preparation method thereof |
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