CN101906359A - Chemically mechanical polishing cleaning liquid - Google Patents
Chemically mechanical polishing cleaning liquid Download PDFInfo
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- CN101906359A CN101906359A CN2009100526590A CN200910052659A CN101906359A CN 101906359 A CN101906359 A CN 101906359A CN 2009100526590 A CN2009100526590 A CN 2009100526590A CN 200910052659 A CN200910052659 A CN 200910052659A CN 101906359 A CN101906359 A CN 101906359A
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- cleaning liquid
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- polishing cleaning
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Abstract
The invention discloses a chemically mechanical polishing (CPM) cleaning liquid, which comprises a carrier and a chemical additive agent, wherein the chemical additive agent can react with surface remainders of a polishing head, a polishing pad or a polishing material to produce soluble compounds by one or more than one of the redox reaction, the dissolution reaction and the complex reaction. The chemically mechanical polishing cleaning liquid can clean pollutants caused in the polishing process of a wafer polishing head and the polishing pad, control local and integral corrosion of a metal material, reduce surface pollutants of a substrate, and improve the yield.
Description
Technical field
The present invention relates to a kind of scavenging solution, be specifically related to a kind of chemically mechanical polishing cleaning liquid.
Background technology
Planarization has become with photoetching and etching is of equal importance and one of complementary indispensable gordian technique in the IC manufacturing process.And chemically machinery polished (CMP) technology is effective, the most sophisticated planarization at present.Chemical-mechanical polishing system is the chemical-mechanical planarization technology of technology such as collection cleaning, drying, online detection, end point determination and one.CMP is widely used in IC manufacturing field, and the polishing object comprises substrate, medium and interconnection material etc.Wherein metal CMP is the device and one of critical process of making that interconnects in the following chip manufacturing of 90 nanometers, is the research focus of inferior 90 nanometer era.Metallic copper, aluminium, tungsten are being applied to the interconnection on the integrated circuit (IC)-components more and more, must realize multilayer interconnection by chemically machinery polished, thereby chemical mechanical polishing of metals and the scavenging solution of developing a new generation allow industry pay close attention to always.
Permanganic acid, mangaic acid, advantage such as mangaic acid and soluble salt thereof have efficiently as a kind of common strong oxidizer, and be inexpensive.US3429080 discloses a kind of permanganic acid that comprises, potassium manganate is used for silicon polishing at the interior composition that contains oxygenant.But because permanganic acid, mangaic acid and soluble salt thereof in use can produce special chocolate and may exist residual and influence its being extensive use of at semicon industry.
At present commonly used chemically mechanical polishing cleaning liquid is disclosed has, and for example the scavenging solution in the U.S. US2002169088 patent comprises carboxylic acid, nitrogenous compound and phosphoric acid (carboxylic acid, phosphoricacid, amine acid).Acidic cleaning solution in No. 2005093031 patents of world patent WO comprises organic acid and nitrogenous inhibitor.Alkaline cleaning fluid in No. 2005085408 patents of world patent WO comprises organic acid and nitrogenous inhibitor.Scavenging solution among the Chinese patent CN01104317.2 comprises organic acid, corrosion inhibitor, and hydramine, many alcohol compounds, these all are the using method about scavenging solution or scavenging solution.Scavenging solution in the U.S. Pat 6147002 is the scavenging solution about a kind of acidic aqueous solution, and it also comprises the fluorine-containing material of 0.5～5 weight %, and this scavenging solution is suitable for cleaning the ic component of copper metal semiconductor wafer.But the scavenging solution in the above-mentioned patent, or contain toxicant, unfriendly to environment; Or cleaning efficiency is not high enough, or has residual to defectives such as subsequent technique generation detrimentally affects; Or the cleaning use range is narrow, and for example the scavenging solution of US6443814 patent is merely able to clean the wafer of copper-containing metal layer.Do not see at present the clean-out system that has at the MnO4 polishing fluid.Therefore need the chemical cleaning solution of exploitation at the MnO4 polishing fluid.Not only can effectively remove the pollution on each surface and various residual, reduce interference greatly, control the part and the general corrosion on polishing material surface simultaneously, reduce the substrate surface pollutent, improve yield subsequent technique.
Summary of the invention
Technical problem to be solved by this invention is can produce pollution to wafer, rubbing head and polishing pad in order to overcome in chemically machinery polished the polishing fluid that uses permanganic acid and soluble salt thereof, and existing chemically mechanical polishing cleaning liquid can not effectively clean wafer, rubbing head and the polishing pad after such chemical mechanical polishing liquid polishing, and therefore a kind of chemically mechanical polishing cleaning liquid is provided.Polishing wafer head that chemically mechanical polishing cleaning liquid of the present invention can the cleaning polishing process causes and polishing pad pollute, and control the part and the general corrosion of metallic substance simultaneously, reduce the substrate surface pollutent, improve yield.
Chemically machinery polished of the present invention (CMP) scavenging solution contains carrier and chemical additive, this chemical additive can with one or more reactions in rubbing head, polishing pad or polishing material surface residue generation redox reaction, solubilizing reaction and the complex reaction, thereby generate soluble compound.
Described can with the molecular structure of the chemical additive of the surface residue generation redox reaction of rubbing head, polishing pad or polishing material in contain can be oxidized nitrogen hydrogen group NH and/or NH
2, what this chemical additive was preferable is chitosan, 1,2, one or more in 4 triazoles and the 5-amino-tetrazole.
Described chemical additive can also for: contain in the soluble salt of soluble salt, oxalic acid and oxalic acid of soluble salt, nitrilotriacetic acid(NTA), nitrilotriacetic acid(NTA) of soluble salt, four oxalic acid, four oxalic acid of compound, solubility iodate thing, ethylenediamine tetraacetic acid (EDTA) (EDTA), the ethylenediamine tetraacetic acid (EDTA) (EDTA) of peroxide root one or more; The described compound that contains the peroxide root is preferable is hydrogen peroxide; What described solubility iodate thing was preferable is potassiumiodide.
What the concentration of described chemical additive was preferable is massfraction 0.01～10%, and better is massfraction 0.05～5%.
Described carrier is the used conventional carrier in this area, and preferable is the mixture of water, water and alcoholic acid mixture or water and Virahol, and better is water; What the content of described carrier was preferable is the massfraction 100% of supplying chemically mechanical polishing cleaning liquid of the present invention.
What the pH value of chemically mechanical polishing cleaning liquid of the present invention was preferable is 1～12, and better is 1～4.The pH regulator agent can be various acid and/or alkali, so that pH regulator to desirable value is got final product, preferable is selected from sulfuric acid, nitric acid, phosphoric acid, ammoniacal liquor, potassium hydroxide, thanomin and the trolamine one or more.
Chemically mechanical polishing cleaning liquid of the present invention also contains the conventional additives of other this areas, as in tensio-active agent, stablizer, inhibitor and the sterilant one or more.
Polishing fluid of the present invention can be made by following method: with the mentioned component uniform mixing, adopt the pH regulator agent to adjust the pH value to desirable value then.Agents useful for same of the present invention and raw material are all commercially available to be got.
Positive progressive effect of the present invention is:
1) chemically mechanical polishing cleaning liquid of the present invention can effectively be removed permanganic acid and soluble salt thereof and produce pollution to polishing pad, rubbing head.
2) chemically mechanical polishing cleaning liquid of the present invention can effectively prevent part and general corrosion to metal material surface when cleaning above-mentioned pollution, reduces the substrate surface pollutent.
So scavenging solution of the present invention not only can effectively be removed polishing pad and the metallic surface is various residual, reduce interference greatly to subsequent technique, and can reduce the surface pitting of metallic substance greatly, reduce the surface corrosion degree, prevent the dielectric substrate erosion that the metal planarization process produces, thereby the minimizing defective improves cleaning efficiency and product yield, increases the product earning rate.
Description of drawings
The photo of the polishing pad that Fig. 1 is to use the MnO4 polishing slurries after with pure washed with de-ionized water.
Fig. 2 is to use the photo after the polishing pad of MnO4 polishing slurries cleans with embodiments of the invention 1 scavenging solution.
The photo of the rubbing head that Fig. 3 is to use the MnO4 polishing slurries after with pure washed with de-ionized water.
Fig. 4 is to use the photo after the rubbing head of MnO4 polishing slurries cleans with embodiments of the invention 2 scavenging solutions.
Fig. 5 is to use wafer (tungsten sheet) after the MnO4 polishing slurries polishing with the photo after the pure washed with de-ionized water.
Fig. 6 is to use the photo after the wafer (tungsten sheet) after the polishing of MnO4 polishing slurries cleans with embodiments of the invention 3 scavenging solutions.
Embodiment
Further specify the present invention with embodiment below, but the present invention is not limited.
Table 1 is embodiment 1～embodiment 22.Add chemical additive of the present invention and carrier in the reactor successively and stir, add deionized water and be diluted to volume requiredly, use pH regulator agent (20%KOH or rare HNO at last
3, select according to the needs of pH value) be adjusted to required pH value and continue to be stirred to uniform fluid, leave standstill the chemically mechanical polishing cleaning liquid that can obtain among each embodiment in 30 minutes.
The scavenging solution prescription of table 1 embodiment 1～22
Effect embodiment 1
With the scavenging solution of pure deionized water and embodiment 1 polishing pad that uses the MnO4 polishing slurries is cleaned respectively, the results are shown in Figure 1 and Fig. 2.
Wherein, each cleaning condition and parameter are all identical, and be as described below: PPG polishing pad, downward pressure 4psi, rotary speed/rubbing head rotating speed=60/80rpm, scavenging period 10s, chemically mechanical polishing cleaning liquid flow velocity 200mL/min.
Comparison diagram 1 and Fig. 2 as can be seen, use the polishing pad of MnO4 polishing slurries to clean with scavenging solution of the present invention after, the residual effectively removing of surperficial chocolate.
Effect embodiment 2
With the scavenging solution of pure deionized water and embodiment 2 rubbing head that uses the MnO4 polishing slurries is cleaned respectively, the results are shown in Figure 3 and Fig. 4.
Wherein, each cleaning condition and parameter are all identical, and be as described below: PPG polishing pad, downward pressure 4psi, rotary speed/rubbing head rotating speed=60/80rpm, scavenging period 10s, chemically mechanical polishing cleaning liquid flow velocity 200mL/min.
Comparison diagram 3 and Fig. 4 as can be seen, use the rubbing head of MnO4 polishing slurries to clean with scavenging solution of the present invention after, the residual effectively removing of surperficial chocolate.
Effect embodiment 3
Respectively with the scavenging solution of pure deionized water and embodiment 3 to cleaning with the tungsten wafer after the polishing of MnO4 polishing slurries, the results are shown in Figure 5 and Fig. 6.
Wherein, each cleaning condition and parameter are all identical, and be as described below: PPG polishing pad, downward pressure 4psi, rotary speed/rubbing head rotating speed=60/80rpm, scavenging period 10s, chemically mechanical polishing cleaning liquid flow velocity 200mL/min.
Comparison diagram 5 and Fig. 6 as can be seen, with the wafer (tungsten sheet) after the polishing of MnO4 polishing slurries after cleaning with scavenging solution of the present invention, the residual effectively removing of surperficial chocolate.
Claims (10)
1. chemically mechanical polishing cleaning liquid, it contains carrier and chemical additive, this chemical additive can with one or more reactions in surface residue generation redox reaction, solubilizing reaction and the complex reaction of rubbing head, polishing pad or polishing material, thereby generate soluble compound.
2. chemically mechanical polishing cleaning liquid as claimed in claim 1 is characterized in that: described can with the molecular structure of the chemical additive of the surface residue generation redox reaction of rubbing head, polishing pad or polishing material in contain can be oxidized nitrogen hydrogen group NH and/or NH
2
3. chemically mechanical polishing cleaning liquid as claimed in claim 2 is characterized in that: described chemical additive is a chitosan, 1,2, one or more in 4 triazoles and the 5-amino-tetrazole.
4. chemically mechanical polishing cleaning liquid as claimed in claim 1 is characterized in that: described chemical additive is one or more in the soluble salt of soluble salt, oxalic acid and oxalic acid of soluble salt, nitrilotriacetic acid(NTA), nitrilotriacetic acid(NTA) of soluble salt, four oxalic acid, four oxalic acid of the compound that contains the peroxide root, solubility iodate thing, ethylenediamine tetraacetic acid (EDTA), ethylenediamine tetraacetic acid (EDTA).
5. chemically mechanical polishing cleaning liquid as claimed in claim 4 is characterized in that: the described compound that contains the peroxide root is a hydrogen peroxide; Described solubility iodate thing is a potassiumiodide.
6. chemically mechanical polishing cleaning liquid as claimed in claim 1 is characterized in that: the concentration of described chemical additive is massfraction 0.01～10%.
7. chemically mechanical polishing cleaning liquid as claimed in claim 6 is characterized in that: the concentration of described chemical additive is massfraction 0.05～5%.
8. chemically mechanical polishing cleaning liquid as claimed in claim 1 is characterized in that: described carrier is the mixture of water, water and alcoholic acid mixture or water and Virahol.
9. chemically mechanical polishing cleaning liquid as claimed in claim 1 is characterized in that: the pH value of described chemically mechanical polishing cleaning liquid is 1～12.
10. chemically mechanical polishing cleaning liquid as claimed in claim 9 is characterized in that: the pH value of described chemically mechanical polishing cleaning liquid is 1～4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100526590A CN101906359A (en) | 2009-06-08 | 2009-06-08 | Chemically mechanical polishing cleaning liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100526590A CN101906359A (en) | 2009-06-08 | 2009-06-08 | Chemically mechanical polishing cleaning liquid |
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| CN101906359A true CN101906359A (en) | 2010-12-08 |
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| CN2009100526590A Pending CN101906359A (en) | 2009-06-08 | 2009-06-08 | Chemically mechanical polishing cleaning liquid |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102453637A (en) * | 2010-10-29 | 2012-05-16 | 安集微电子（上海）有限公司 | Cleaning solution |
| CN103074175A (en) * | 2012-12-31 | 2013-05-01 | 深圳市力合材料有限公司 | Polishing pad cleaning solution and use method thereof |
| CN103578918A (en) * | 2012-07-24 | 2014-02-12 | 无锡华润上华科技有限公司 | Method for reducing surface electric arcing defect of semiconductor chip |
| CN104385109A (en) * | 2014-09-25 | 2015-03-04 | 湖北大禹汉光真空电器有限公司 | Acid-free surface treatment technology of electrical pure iron and stainless steel parts for electrical vacuum device |
Citations (4)
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|---|---|---|---|---|
| US6147002A (en) * | 1999-05-26 | 2000-11-14 | Ashland Inc. | Process for removing contaminant from a surface and composition useful therefor |
| CN1495244A (en) * | 2002-08-02 | 2004-05-12 | Jsr株式会社 | Aqueous dispersion body for chemically mechanical polishing and semicoductor device production method |
| WO2004069947A1 (en) * | 2003-02-03 | 2004-08-19 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| CN101270325A (en) * | 2007-03-23 | 2008-09-24 | 安集微电子（上海）有限公司 | Rinse liquid and uses thereof |
-
2009
- 2009-06-08 CN CN2009100526590A patent/CN101906359A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6147002A (en) * | 1999-05-26 | 2000-11-14 | Ashland Inc. | Process for removing contaminant from a surface and composition useful therefor |
| CN1495244A (en) * | 2002-08-02 | 2004-05-12 | Jsr株式会社 | Aqueous dispersion body for chemically mechanical polishing and semicoductor device production method |
| WO2004069947A1 (en) * | 2003-02-03 | 2004-08-19 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| CN101270325A (en) * | 2007-03-23 | 2008-09-24 | 安集微电子（上海）有限公司 | Rinse liquid and uses thereof |
Non-Patent Citations (2)
| Title |
|---|
| J.马奇著: "《高等有机化学反应、机理和结构(下册)》", 31 July 1990, 高等教育出版社 * |
| 谢晶曦等编著: "《红外光谱在有机化学和药物化学中的应用》", 31 December 2001, 北京科学出版社 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102453637A (en) * | 2010-10-29 | 2012-05-16 | 安集微电子（上海）有限公司 | Cleaning solution |
| CN102453637B (en) * | 2010-10-29 | 2016-01-20 | 安集微电子（上海）有限公司 | A kind of scavenging solution |
| CN103578918A (en) * | 2012-07-24 | 2014-02-12 | 无锡华润上华科技有限公司 | Method for reducing surface electric arcing defect of semiconductor chip |
| CN103074175A (en) * | 2012-12-31 | 2013-05-01 | 深圳市力合材料有限公司 | Polishing pad cleaning solution and use method thereof |
| CN103074175B (en) * | 2012-12-31 | 2015-03-04 | 深圳市力合材料有限公司 | Polishing pad cleaning solution and use method thereof |
| CN104385109A (en) * | 2014-09-25 | 2015-03-04 | 湖北大禹汉光真空电器有限公司 | Acid-free surface treatment technology of electrical pure iron and stainless steel parts for electrical vacuum device |
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