CN114554727A - Electroplating method for realizing high-aspect-ratio through blind hole and PCB - Google Patents
Electroplating method for realizing high-aspect-ratio through blind hole and PCB Download PDFInfo
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- CN114554727A CN114554727A CN202210333275.1A CN202210333275A CN114554727A CN 114554727 A CN114554727 A CN 114554727A CN 202210333275 A CN202210333275 A CN 202210333275A CN 114554727 A CN114554727 A CN 114554727A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
Abstract
The invention relates to the technical field of PCBs (printed circuit boards), and discloses an electroplating method for realizing a through blind hole with a high aspect ratio and a PCB. The electroplating method comprises the following steps: providing a plate to be electroplated with a through hole and/or a blind hole, and depositing copper on the plate to be electroplated; electroplating the plate to be electroplated after copper deposition in a forward pulse electroplating mode in an electroplating liquid medicine environment added with additives; the additives comprise leveling agent, inhibitor and brightening agent; during the electroplating, the first positive pulse current applied in the additive burst period in the whole electroplating period is controlled to be larger than the second positive pulse current applied in the additive non-burst period. The electroplating method provided by the embodiment of the invention adopts an electroplating mode combining forward pulse electroplating and direct current electroplating liquid medicine, and according to the characteristics of the additive, the forward pulse currents with different sizes are implemented in the outbreak period and the non-outbreak period, and meanwhile, the electroplating requirements of the through holes and the blind holes are met, and the electroplating method has the advantages of simple process, low cost and high efficiency.
Description
Technical Field
The invention relates to the technical field of Printed Circuit Boards (PCBs), in particular to an electroplating method for realizing a high aspect ratio through blind hole and a PCB.
Background
With the rapid development and application popularization of 5G products, the trend of Printed Circuit Boards (PCBs) towards high-speed and high-density design is more obvious, for example, the mature 56G rate core network switch and router in the communication field are 4.5mm thick, the aspect ratio of through holes is 30:1, and the design of 1-4 layers of deep micro blind holes with the aperture of 12-14mil and the depth-diameter ratio of more than or equal to 1.0 is adopted. At present, the product gradually breaks through the rate of 112G, the design layout is denser, the related process manufacturing difficulty is higher, and the bottleneck of stability maintenance of the copper plating deep plating capacity of a wet process is more prominent. There are several methods currently available for electroplating such products:
(1) separate plating of through-holes and blind-holes
The method mainly comprises the following steps: … → lamination → laser drilling (blind hole) → plasma → decontamination copper deposition → plate surface electroplating one → … → thinning copper/abrasive belt plate (optional process) → drilling (through hole) → plasma one → decontamination copper deposition one → plate surface electroplating two → outer layer dry film → pattern electroplating → ….
(2) Hole-filling flash plating and low-current long-time combined plating
The method mainly comprises the following steps: … → lamination → drilling (through hole) → laser drilling (blind hole) plasma → decontamination copper deposition → plate surface electroplating one (VCP hole filling line through hole and blind hole flash plating) → decontamination copper deposition → plate surface electroplating two (through hole thickening copper) → abrasive belt grinding plate (optional procedure) → … → outer layer dry film → pattern electroplating → …, the method is relatively shorter than the first method procedure, but because the VCP line is weaker than the gantry line in equipment capability in the plate surface electroplating one procedure of the through hole, the hole filling capability of liquid medicine to the through hole is poor, so the deep plating capability of the flash plating layer is poor, and the electroplating mode with small current for a long time (common current density is 4.5-6ASF, and the electroplating time is 400-700min) is needed to realize the through hole electroplating, the electroplating time efficiency is extremely low, and the yield is difficult.
(3) Forward and reverse pulse plating
The method mainly comprises the following steps: … → lamination → drilling (through hole) → laser drilling (blind hole) plasma → desmear copper deposition → plate surface electroplating (forward and reverse pulse electroplating) → … → outer dry film → pattern electroplating → …, the method utilizes reverse copper biting of pulse electroplating to realize surface copper thin and improve the deep plating capability of the through blind hole, the process flow is simple, but the through blind hole synchronous electroplating of the product can generate columnar crystals due to the biting action of reverse current of the pulse, the crystal lattice gaps are large, and the crystals are easy to crack due to heating, as shown in figures 1 and 2, when the product is used for welding a device at a high temperature at a client, the copper layer has the hidden danger of cracking, as shown in figure 3, the reliability of the product is seriously influenced, so that a plurality of clients do not accept the columnar crystals of the product at present.
(4) High copper liquid medicine and low copper liquid medicine combined electroplating
The method mainly comprises the following steps: … → lamination → drilling (through hole) → laser drilling (blind hole) plasma → decontamination electroless plating copper → plate surface electroplating (flash plating of high copper chemical solution to the through hole and the blind hole) → decontamination electroless plating copper → plate surface electroplating (low copper chemical solution through hole thickened copper) → abrasive belt grinding plate (optional process) → … → outer dry film → pattern electroplating → …. The plate with the through blind hole design firstly satisfies the electroplating of the blind hole in the high copper cylinder during electroplating, and then realizes the deep plating capacity of the through hole in a low copper liquid medicine by utilizing a low current long-time mode, is similar to part of the process in the method (2), and has limited output during the mass production of products.
The through blind hole electroplating technologies have advantages and disadvantages, and cost and efficiency cannot be considered simultaneously.
Disclosure of Invention
The invention aims to provide an electroplating method for realizing a through blind hole with a high aspect ratio and a PCB (printed Circuit Board), so as to overcome the defect that the existing through blind hole electroplating technology cannot simultaneously consider cost and efficiency.
In order to achieve the purpose, the invention adopts the following technical scheme:
an electroplating method for realizing a high aspect ratio through blind hole comprises the following steps:
providing a plate to be electroplated with a through hole and/or a blind hole, and depositing copper on the plate to be electroplated;
electroplating the plate to be electroplated after copper deposition in a positive pulse electroplating mode in an electroplating liquid medicine environment added with additives; the additives comprise leveling agent, inhibitor and brightening agent;
during the electroplating, the first positive pulse current applied in the additive explosion period in the whole electroplating period is controlled to be larger than the second positive pulse current applied in the additive non-explosion period in the whole electroplating period.
Optionally, when the first forward pulse current and the second forward pulse current are switched, a power-off operation with a preset duration is performed.
Optionally, the waveform of the positive pulse includes a square wave and/or a sine wave.
Optionally, a value range of the current density corresponding to the first forward pulse current is 8-15 ASF, and a value range of the current density corresponding to the second forward pulse current is 5-10 ASF.
Optionally, a value range of the current density corresponding to the first forward pulse current is 8ASF-10ASF, and a value range of the current density corresponding to the second forward pulse current is 5-8 ASF.
Optionally, the starting time of the additive burst period is: within 10-15 min after the plating start time of electroplating the board to be electroplated; the duration of the additive burst period is 10-30 min.
Optionally, in the electroplating solution environment, the concentration of copper sulfate is 60-90 g/L.
A PCB made according to any of the above electroplating methods to achieve high aspect ratio through blind vias.
Compared with the prior art, the invention has the beneficial effects that:
the electroplating method provided by the embodiment of the invention adopts an electroplating mode combining forward pulse electroplating and direct current electroplating liquid medicine (namely the electroplating liquid medicine simultaneously comprising three additives of a leveling agent, a suppressor and a brightener), and according to the characteristics of the additives in the direct current electroplating liquid medicine, forward pulse currents with different sizes are implemented in an additive explosion period and an additive non-explosion period, and meanwhile, the electroplating requirements of through holes and blind holes are met, and the electroplating method has the advantages of simple process, low cost and high efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a prior art through hole orifice pillar crystalline view;
FIG. 2 is a prior art blind hole orifice columnar crystalline view;
FIG. 3 is a view of a copper fracture in a conventional pulsed columnar crystallized product;
FIG. 4 is a schematic diagram of conventional forward and reverse pulsing;
FIG. 5 is a flowchart of an electroplating method for forming high aspect ratio through vias according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of the electric line distribution of additive in the non-explosion period in the electroplating process according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of the electric line distribution of additive burst period in the electroplating process according to an embodiment of the present invention;
FIGS. 8(a) and (b) are graphs showing the adsorption state of the additive during the burst period and the copper plating effect of the blind via, respectively;
FIGS. 9(a) and (b) are graphs showing the adsorption state of the additive in the non-explosion period and the copper plating effect of the blind via, respectively;
FIG. 10 is a waveform diagram of a forward pulse wave provided by an embodiment of the present invention;
FIGS. 11(a) and (b) are schematic diagrams of a plated through hole and a plated blind hole, respectively, according to an embodiment of the present invention;
FIGS. 12(a) and (b) are sectional views of a plated product having a plate thickness of 4.5mm, a through-hole aspect ratio of 30:1, a blind-hole diameter of 14mil and a depth-diameter ratio of 1.3, respectively, according to an embodiment of the present invention.
Detailed Description
In order to make the objects, features and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the embodiments described below are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The pulse plating is plating using a pulse power source instead of a direct current power source. In the electroplating process, parameters such as waveform, frequency, on-off ratio, average current density and the like can be controlled to change the electrodeposition process in a wide range, so that a plating layer with certain characteristics can be obtained in certain plating solution.
Compared with the common direct current electroplating, the pulse electroplating has large peak current density because the pulse width (namely the conduction time) is small, the metal ions near the cathode are reduced sharply during the working period, and the power supply is cut off when the diffusion layer is not as thick as possible; in the pulse interval time, metal ions lacking on the surface of the cathode can be timely supplemented by the main solution, and the pulse diffusion layer is basically eliminated, so that the concentration of the metal ions in the electrolyte tends to be consistent, and the pulse electroplating has the advantages of flat and compact plating layer, good adhesiveness, high current efficiency, good environmental protection performance and the like.
The pulse mode used in pulse plating can be divided into a unidirectional pulse mode and a bidirectional pulse mode. The pulse mode conventionally applied to realize the through-blind-hole synchronous electroplating is bidirectional pulse, also called forward and reverse pulse, and the pulse wave is shown in fig. 4.
In order to ensure the smoothness of the surface of the electroplated coating, additives are often added to the bath, wherein leveling agents, suppressors and brighteners are commonly used.
The leveling agent is mainly used for electrochemical adsorption, and is adsorbed in a high potential area of a cathode to adsorb electrons and Cu2+Form a competitive action, therebyThe Cu deposition rate in the high potential area is slowed down, so that the thickness of surface copper is close to that of hole copper;
② an inhibitor, also called wetting agent, which has the function of promoting leveling agent and brightening agent to be better dissolved in the plating solution, improving the dispersing ability of the plating solution, and the macromolecular polyfunctional group structure characteristic of the inhibitor can be matched with Cu2+And Cl-Complexing to form a long molecular chain film, blocking Cu2+Electrons are obtained at the cathode surface to form Cu deposition.
And thirdly, the brightening agent mainly acts as a refiner of copper grains, namely the copper surface is brightened.
In general, the additives used in a matching way for the direct current electroplating mode comprise three components, namely a leveling agent, a suppressor and a brightener; and aiming at the pulse plating mode, the matched additive only comprises two components of a suppressor and a brightener. This is due to: when the high aspect ratio through blind hole is electroplated by adopting a forward and reverse pulse electroplating technology, because a reverse pulse anode of a bidirectional pulse power supply is stripped (a copper electroplating layer is reversely corroded), a leveling agent in the additive cannot be adsorbed on a cathode (the leveling agent falls off along with the stripping of the copper electroplating layer) to play a leveling role, and therefore an adopted electroplating liquid medicine system can only be a pulse liquid medicine system (mainly comprising an inhibitor and a brightener and not containing the leveling agent). On the basis, when the forward pulse and the reverse pulse work, because the suppression effect of the leveling agent is not available, the copper layer is thicker during the forward pulse current electroplating, so that the surface copper and the hole opening need to be bitten and eroded by strong reverse current, the copper thickness in the hole can be as close to the surface copper thickness as possible, and the requirement of the deep plating capability required by customers is met.
In order to solve the various technical problems in the prior art, referring to fig. 5, an embodiment of the present invention provides an electroplating method for realizing a high aspect ratio through blind via, including:
In the step, the plate to be electroplated provided with the through holes and/or the blind holes can be prepared according to a conventional process. The number, diameter and depth of the through holes and/or blind holes are not limited.
The electroplating method provided by the embodiment of the invention adopts an electroplating mode combining forward pulse electroplating and direct current electroplating liquid medicine (namely the electroplating liquid medicine simultaneously comprising three additives of a leveling agent, a suppressor and a brightener), and according to the characteristics of the additives in the direct current electroplating liquid medicine, forward pulse currents with different sizes are implemented in an additive explosion period and an additive non-explosion period, and meanwhile, the electroplating requirements of through holes and blind holes are met.
It should be noted that the additive burst refers to a time interval during which the leveler and the brightener can exert good adsorption effect during the electroplating process. The additive non-explosion period refers to a time interval except for the explosion period in the whole electroplating process, and can be further divided into an adjustment period (namely, an additive adsorption accumulation process, and the starting time of the period is called as plating start time) and a stabilization period which are respectively positioned before and after the explosion period.
The onset of additive burst period, as analyzed by trial and error studies, was: within 10-15 min after the plating start time of plating the plate to be plated; the duration of the additive explosion period is 10-30 min.
The influence of the additive on the copper plating mainly affects the distribution of electric lines, fig. 6 shows a schematic diagram of the distribution of electric lines during the non-explosion period of the additive in the electroplating process, and fig. 7 shows a schematic diagram of the distribution of electric lines during the explosion period of the additive in the electroplating process. As can be seen from fig. 6 and 7, the plate surface area is a high current density area, the bottom area of the blind via hole is a low current density area, and the current density of the bottom area of the blind via hole in the burst period is higher than that in the non-burst period.
It should be noted that, since the adsorption of the leveling agent component in the additive on the cathode surface is strong potential chemical adsorption, it can adsorb electronsAnd is reduced with Cu2+The processes by which the ion-withdrawing electrons are reduced form a competitive relationship, and thus the leveler is generally adsorbed in a high current density region.
Because the brightener in the additive is adsorbed on the surface of the cathode by weaker potential chemical adsorption, and the action of the brightener is mainly a grain refiner, the brightener is generally adsorbed in a low current density area, has a certain effect of accelerating copper ion deposition, and can be completed with the assistance of a leveling agent.
It was found through repeated experimental analysis that the adsorption state of the additives during the burst period is as shown in fig. 8(a), the leveling agent is mainly adsorbed in the plate surface region, and the brightener is mainly adsorbed in the hole bottom region because the leveling agent is mainly adsorbed with Cu2+The competitive relationship is formed in the process that the ion-electron-withdrawing is reduced, so that the copper ion deposition inhibiting effect is achieved to a certain extent, the brightener has the copper ion deposition accelerating effect to a certain extent, and therefore the adsorption state can cause the copper plating speed of the low-current-density area at the bottom of the blind hole to be higher than the copper plating speed of the board surface, and the copper plating effect on the blind hole is good at the moment, as shown in fig. 8 (b). On the basis, the embodiment of the invention implements larger first positive pulse current in the explosion period, can simultaneously accelerate the copper plating speed of the hole bottom and the board surface, and improves the difference between the copper plating thickness of the hole bottom and the copper plating thickness of the board surface.
As is understood from repeated experimental analysis, the adsorption state of the additive in the non-burst period is as shown in fig. 9(a), and the adsorption amount of the leveler in the plate surface region is decreased and the adsorption amount of the brightener in the hole bottom region is increased, and the adsorption amount of the brightener in the plate surface region is increased and the adsorption amount of the brightener in the hole bottom region is decreased, as compared with the adsorption state in the burst period, the plating rate of the plate surface is higher than the plating rate of the blind hole bottom due to the suppressing action of the leveler on the copper ion deposition and the accelerating action of the brightener on the copper ion deposition, and particularly, the wedge-shaped hole appears in the low current density region at the corner of the blind hole bottom, resulting in copper thinning, as shown in fig. 9 (b). On the basis, if the larger first forward pulse current electroplating is carried out according to the explosion period, the surface copper is too thick, so that the magnitude of the forward pulse current is adjusted in the non-explosion period, and the smaller second forward pulse current is carried out.
For through holes, the main factors affecting the electroplating effect of through holes include the liquid medicine exchange rate and additives (mainly referred to as leveling agent and brightening agent). Under the same condition, the influence of the liquid medicine exchange speed in the outbreak period and the non-outbreak period is basically consistent; however, the effect of the additive varies in magnitude between the burst and non-burst periods. The following describes the plating process of the via holes in the burst period and the non-burst period, respectively:
(1) in the outbreak period, because the leveling agent is distributed in the position of the orifice more, and the brightener is distributed in the position of the orifice more, a larger first forward pulse current is adopted in the stage, the inhibiting effect of the leveling agent on the copper ion deposition and the promoting effect of the brightener on the copper ion deposition can be enhanced, so that the copper plating speed in the hole is higher than that in the orifice for the same through hole, and finally, the copper thickness in the hole is higher than that in the orifice.
Compared with the blind hole under the same environment, due to the structural difference, the brightener attached in the hole of the through hole in the outbreak period is less than the brightener attached at the bottom of the blind hole, so after the outbreak period, the copper thickness in the through hole is thinner than that at the bottom of the blind hole, in other words, the difference between the copper thickness in the hole opening and the copper thickness in the hole of the through hole is smaller than that of the blind hole.
In addition, compared with the conventional mode of electroplating the through hole by adopting single current, the mode of applying larger first positive pulse current in the explosion period adopted by the embodiment of the invention can effectively promote the deposition of copper ions in the through hole, improve the electroplating speed in the hole and realize higher deep plating capability.
(2) In the non-explosion period, the adsorption amount of the leveling agent in the orifice area is reduced, the adsorption amount of the leveling agent in the hole area is increased, the adsorption amount of the brightening agent in the orifice area is increased, and the adsorption amount of the brightening agent in the hole area is reduced, so that the electroplating speed of the orifice of the through hole is higher than that of the hole in the electroplating process, and at the moment, a smaller second positive pulse current is implemented, so that the difference of the electroplating speeds of the orifice and the hole in the non-explosion period can be reduced, and the excessive thickness of the copper layer of the orifice is avoided.
It should be noted that the second forward pulse current is smaller than the first forward pulse current, but still larger than the current used in the conventional method of electroplating a through hole with a single current (in the prior art, the current density corresponding to the current is usually less than 5ASF), so that a copper layer with a higher thickness uniformity can be deposited in the hole and the orifice of the through hole after the non-explosion period, and the electroplating speed is also higher.
In summary, for the through hole, by applying the electroplating method provided by the embodiment of the invention, a higher electroplating speed can be realized no matter in the explosion period or in the non-explosion period, the deep plating capability is strong, and finally, the consistency of the copper thickness formed in the hole opening and the through hole is higher.
In summary, the embodiment of the invention implements different forward pulse currents at different stages, and switches the magnitude of the forward pulse current according to the additive explosion period, thereby meeting the requirements of electroplating through holes and blind holes at the same time. The through hole electroplating is mainly carried out by exchanging liquid medicine, and a small current is adopted in a non-explosion period, so that the through hole electroplating is facilitated; the blind hole electroplating is mainly performed by using the leveling agent and the brightener of the additive, the leveling agent and the brightener are adsorbed in the blind hole in a proper proportion in an outbreak period, the electroplating speed is suddenly increased, and the electroplating is favorably performed on the corner at the bottom of the blind hole by adopting larger current.
In addition, when the first forward pulse current and the second forward pulse current are switched, the power-off operation with the preset duration can be carried out (the power-off time period is 2-6 mms). In this process, Cu near the surface of the cathode (i.e., the plate to be plated)2+The consumption of ions can be quickly supplemented by micro diffusion so that the cathode can maintain continuous and uniform electroplating, and therefore, the through holes and the blind holes can obtain better deep plating capability.
In an alternative embodiment, the waveform of the forward pulse wave may be a square wave (as shown in fig. 10) and/or a sine wave. In practical application, the first forward pulse current implemented in the whole burst period may be kept constant or may be changed according to a certain curve; similarly, the second forward pulse current applied during the entire non-burst period may be constant or may be varied according to a certain curve. The electroplating device can be flexibly designed according to the characteristics of a plate to be electroplated and the actual electroplating requirement, and the precondition that the first forward pulse current is greater than the second forward pulse current is met.
Illustratively, the value range of the current density corresponding to the first forward pulse current is 8ASF-15ASF (preferably 8ASF-10ASF), and the blind hole corner filling is met; the value range of the current density corresponding to the second positive pulse current is 5-10ASF (preferably 5-8ASF), and the electroplating of the deep plating capability of the through hole is met. In general, a cathode current (i.e., a forward pulse current) is equal to a current density (ASF) x a plate double-sided area (ft)2) X number of panels. Taking the current density corresponding to the first forward pulse current as 10ASF and the current density corresponding to the second forward pulse current as 8ASF as an example, FIG. 10 shows that the area of the two sides of the board is 6.0ft2A forward pulse waveform diagram in the case of (1); in this waveform, the forward pulse current in the non-burst period (refer to the stage (r) and the stage (c) in the figure) is 8ASF × 6.0ft2X 1 is 48A, and the forward pulse current in the burst period (i.e., phase (c) in the figure) is 10ASF × 6.0ft2×1＝60A。
In addition, according to the characteristics of high copper, medium copper and low copper liquid medicine systems shown in the following table, when the through hole and the blind hole are simultaneously electroplated by applying the embodiment of the invention, the medium copper liquid medicine (the concentration of copper sulfate is 60g/L-90g/L) is preferably selected, the electroplating requirements of the through hole and the blind hole can be considered, and the good electroplating effect of both the through hole and the blind hole can be ensured.
The embodiment of the invention also provides a PCB which is prepared by adopting the electroplating method. Due to the adoption of the through-blind hole synchronous electroplating technology, the technology adopts the combination of forward pulse electroplating and direct current electroplating liquid medicine, and has the characteristics of simple process flow, low cost and high efficiency. After the technology is implemented, slicing can be carried out, and the through hole depth capacity and the blind hole depth capacity can be respectively detected according to the following formulas:
wherein A, B, C, D, E, F, C1, C2, S1 and S2 are the measured values of the copper thickness at the corresponding positions in FIG. 11(a) and (b), respectively.
Through repeated verification, the process capability of the embodiment of the invention can realize the through hole aspect ratio of 30:1 of the 4.5mm thick plate with the deep plating capability of more than or equal to 80 percent and the deep micro blind hole aperture with the depth-diameter ratio of 14mil of 1.3, as shown in (a) and (b) of fig. 12. The electroplating current density can be increased from 5ASF to 8ASF on average, the electroplating time is 200-300min, the time efficiency is increased by 43 percent on average, the quality meets the requirement after the cold-heat impact test (500 cycles at-55-125 ℃), and the equipment productivity is released.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (8)
1. An electroplating method for realizing a high aspect ratio through blind hole is characterized by comprising the following steps:
providing a plate to be electroplated with a through hole and/or a blind hole, and depositing copper on the plate to be electroplated;
electroplating the plate to be electroplated after copper deposition in a positive pulse electroplating mode in an electroplating liquid medicine environment added with additives; the additives comprise leveling agent, inhibitor and brightening agent;
during the electroplating, the first positive pulse current applied in the additive explosion period in the whole electroplating period is controlled to be larger than the second positive pulse current applied in the additive non-explosion period in the whole electroplating period.
2. The electroplating method for realizing the high aspect ratio through blind hole according to claim 1, wherein a power-off operation is performed for a preset time length when switching between the first forward pulse current and the second forward pulse current.
3. The electroplating method for realizing the high aspect ratio through blind hole according to claim 2, wherein the waveform of the forward pulse comprises a square wave and/or a sine wave.
4. The electroplating method for realizing the high aspect ratio through blind via hole according to claim 2, wherein a current density corresponding to the first forward pulse current is in a range of 8-15 ASF, and a current density corresponding to the second forward pulse current is in a range of 5-10 ASF.
5. The electroplating method for realizing the high aspect ratio through blind via according to claim 4, wherein a current density corresponding to the first forward pulse current is in a range of 8ASF-10ASF, and a current density corresponding to the second forward pulse current is in a range of 5-8 ASF.
6. The electroplating method for realizing high aspect ratio through blind vias according to claim 1, wherein the additive burst period starts at the time of: within 10-15 min after the plating start time of electroplating the board to be electroplated; the duration of the additive burst period is 10-30 min.
7. The electroplating method for realizing the high aspect ratio through blind hole as claimed in claim 1, wherein the concentration of copper sulfate in the electroplating solution environment is 60-90 g/L.
8. A PCB manufactured according to the electroplating method for realizing high aspect ratio through blind vias of any of claims 1 to 7.
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| CN202210333275.1A CN114554727A (en) | 2022-03-31 | 2022-03-31 | Electroplating method for realizing high-aspect-ratio through blind hole and PCB |
| PCT/CN2022/099873 WO2023184730A1 (en) | 2022-03-31 | 2022-06-20 | Electroplating method for through and blind holes with high aspect ratio, and pcb |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115522236A (en) * | 2022-10-08 | 2022-12-27 | 上海天承化学有限公司 | VCP pulse electroplating hole filling process and application thereof |
| WO2023184730A1 (en) * | 2022-03-31 | 2023-10-05 | 生益电子股份有限公司 | Electroplating method for through and blind holes with high aspect ratio, and pcb |
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|---|---|---|---|---|
| DE10311575B4 (en) * | 2003-03-10 | 2007-03-22 | Atotech Deutschland Gmbh | Process for the electrolytic metallization of workpieces with high aspect ratio holes |
| US10154598B2 (en) * | 2014-10-13 | 2018-12-11 | Rohm And Haas Electronic Materials Llc | Filling through-holes |
| CN111270277B (en) * | 2020-03-23 | 2021-05-25 | 东莞市康迈克电子材料有限公司 | Blind hole filling electroplating process, plated part obtained by adopting blind hole filling electroplating process, application of plated part and electronic product |
| CN112030204B (en) * | 2020-08-28 | 2021-10-15 | 生益电子股份有限公司 | Through hole electroplating filling method and printed circuit board manufacturing method |
| CN114554727A (en) * | 2022-03-31 | 2022-05-27 | 生益电子股份有限公司 | Electroplating method for realizing high-aspect-ratio through blind hole and PCB |
-
2022
- 2022-03-31 CN CN202210333275.1A patent/CN114554727A/en active Pending
- 2022-06-20 WO PCT/CN2022/099873 patent/WO2023184730A1/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023184730A1 (en) * | 2022-03-31 | 2023-10-05 | 生益电子股份有限公司 | Electroplating method for through and blind holes with high aspect ratio, and pcb |
| CN115522236A (en) * | 2022-10-08 | 2022-12-27 | 上海天承化学有限公司 | VCP pulse electroplating hole filling process and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023184730A1 (en) | 2023-10-05 |
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