CN114551412A - Crosstalk-free indium gallium arsenic Geiger mode focal plane detection chip structure and manufacturing method thereof - Google Patents
Crosstalk-free indium gallium arsenic Geiger mode focal plane detection chip structure and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a crosstalk-free indium gallium arsenic Geiger mode focal plane detection chip structure and a manufacturing method thereof.A prepared pn-junction indium gallium arsenic Geiger mode focal plane photosensitive array chip is bonded with a support sheet with a micro lens array through gold bonding, a p-type surface of the indium gallium arsenic Geiger mode focal plane chip is a common electrode, and an n-type surface electrode is independent and is connected with a read-out circuit chip through an indium column flip chip; the chip incident photons enter from a support sheet with a micro-lens array, the incident photons are converged into a p area of each independent photosensitive detection area of an InGaAsGeiger-mode focal plane through a micro-lens, and generated pulse signals are processed by a reading circuit interconnected with an n-type surface to realize single photon ranging and laser three-dimensional imaging. The invention can realize the manufacture of the InGaAs Geiger mode focal plane photosensitive array which has no crosstalk and can share the same type of reading circuit with the silicon-based Geiger mode focal plane detector.
Description
Technical Field
The invention belongs to the technical field of chip structures of photoelectric detectors, and relates to a crosstalk-free indium gallium arsenic Geiger-mode focal plane detection chip structure and a manufacturing method thereof, wherein the chip structure is a crosstalk-free indium gallium arsenic Geiger-mode focal plane detection chip and belongs to a near-infrared photoelectric detector chip with the thickness of 0.9-1.7 mu m.
Background
Single photon detectors are devices capable of detecting single photons, and there are many different detectors: the photomultiplier PMT, the microchannel plate MCP, the superconducting boundary conversion sensor TES, the superconducting nanowire SNSPD, the photoelectric avalanche diode APD and the like are summarized, and three types of materials can detect single photons, namely a vacuum glass multiplier, a semiconductor and a superconductor. Among various single photon detectors, a semiconductor APD-based single photon detector, namely a Geiger-mode detector, becomes an ideal single photon detection means due to the characteristics of small volume, compactness, low bias, no influence of a magnetic field, easiness in integration, low power consumption, high reliability and the like.
The single photon detector has great application prospect in many fields, such as quantum communication and calculation, biochemical application, space laser communication, laser ranging and laser radar, astronomical observation and the like. The distance of the object to be measured can be obtained by using the good Time resolution of the geiger mode focal plane detector, namely by measuring the Time-of-Flight (ToF) of the reflected photons, and the geiger mode focal plane detector is used for laser ranging and laser radar. The Geiger-mode focal plane detection chip made of InGaAs/InP (hereinafter all commonly referred to as InGaAs, i.e. InGaAs) material can be used for detecting laser signals with wavelength of 0.9-1.7 μm, has good response at wavelength of 1.55-1.57 μm, has the characteristics of safety to human eyes, good atmospheric transmission performance and the like at the waveband, and is more and more widely concerned in photoelectric application of military and civilian in recent years.
The existing InGaAs Geiger-mode focal plane detection chip has the following two problems, which affect the performance of the InGaAs Geiger-mode focal plane detector. Firstly, the InGaAs epitaxial material prepared by Metal Organic Chemical Vapor Deposition (MOCVD) equipment or Molecular Beam Epitaxy (MBE) equipment is usually an n-type material, a pn junction is prepared by p-type doping, a common electrode of the n-type epitaxial material is an n-type surface electrode, and the n-type epitaxial material cannot share the same type of reading circuit with a silicon-based Geiger mode focal plane detector of which the common electrode is a p-type surface electrode; secondly, along with the enlargement of the scale of the photosensitive chip of the InGaAs Geiger mode focal plane detector array and the reduction of the distance between photosensitive detection regions (unit APDs), the electrical and optical crosstalk between each photosensitive detection region becomes more serious.
Disclosure of Invention
Objects of the invention
The purpose of the invention is: the method is used for manufacturing the InGaAs Geiger-mode focal plane detector which has no crosstalk and can share a reading circuit with a silicon-based Geiger-mode focal plane detector.
(II) technical scheme
In order to solve the technical problem, the invention provides a crosstalk-free InGaAs Geiger-mode focal plane detection chip structure which comprises an InGaAs Geiger-mode focal plane photosensitive array chip with a prepared pn junction and a support sheet with a micro-lens array which are permanently bonded together through gold bonding, wherein a p-type surface of the InGaAs Geiger-mode focal plane chip is a public electrode and is permanently bonded with the support sheet with the micro-lens through gold bonding, an n-type surface electrode is independent and is connected with a read-out circuit chip through indium column flip-chip, and the p-type surface of the chip is a photon incidence surface.
The InGaAsGeiger-mode focal plane photosensitive array chip realizes that each detection region is completely isolated on a bulk material through dry etching to form independent detection regions, and the side walls of the detection regions are effectively protected through treatment and passivation on the side walls.
The invention also provides a manufacturing method of the crosstalk-free InGaAs Geiger-mode focal plane detection chip, a silicon nitride diffusion mask is prepared on an InGaAs (InGaAs) epitaxial wafer designed according to Geiger-mode work, and a pn junction is formed by zinc diffusion to prepare a p electrode. The support sheet is used for preparing through holes and through hole electrodes, the electrodes are prepared on two sides, and the support sheet is used for preparing a micro-lens array. And bonding the prepared pn junction epitaxial wafer with a support piece by gold, performing back thinning and polishing on the bonded epitaxial wafer, and performing dry etching to realize complete isolation of each detection region on the body material so as to finish the preparation of the chip back antireflection film and the electrode.
The method specifically comprises the following steps:
firstly, preparing an indium gallium arsenic epitaxial wafer:
the InGaAs epitaxy used in this example was performed by Metal Organic Chemical Vapor Deposition (MOCVD) technique with n-type doping concentration of 3-8X 1018/cm3The 100 crystal orientation indium phosphide substrate is subjected to epitaxy in sequence: thickness of 1 μm, n-type doping concentration of 3 × 1016/cm3An indium phosphide transition layer; thickness of 2.5 μm, n-type impurity concentration of 1-2 × 1015/cm3Indium gallium arsenide (In)0.53Ga0.47As) light absorbing layer; the thickness is 0.15 μm, and the n-type doping concentration is 3 × 1016/cm3Indium gallium arsenic phosphorus (In)0.76Ga0.24As0.51P0.49) An energy band transition layer; the thickness is 0.2 μm, and the n-type doping concentration is 1.25 × 1017/cm3The indium phosphide charge layer of (1); thickness of 3.5 μm, n-type doping concentration of 7 × 1014/cm3The top indium phosphide layer.
Secondly, preparing an indium gallium arsenide geiger mode focal plane detection chip:
firstly, on the prepared InGaAs epitaxial wafer, the plasma chemical vapor deposition technique is used to grow the thickness
Silicon nitride of (2). 32 multiplied by 32 small circular diffusion windows with the diameter of 25 mu m are manufactured on the silicon nitride layer by adopting the photoetching technology and the etching technology, zinc diffusion is carried out in an open-tube high-temperature diffusion mode, PN junctions with the diameter of 25 mu m and the depth of 2.5 mu m are formed in the indium phosphide on the top layer, and small unit APDs are formed one by one. Secondly, growing the thickness by using a plasma chemical vapor deposition technology
The silicon nitride antireflection film 8 is used for manufacturing the electrode hole of each photosensitive detection area by a photoetching technology and a dry etching technology. The titanium/platinum/gold p electrode 9 of the detection chip is prepared by adopting the technologies of photoetching, electron beam evaporation, 430 ℃ alloy, gold electroplating, metal etching and the like.
The front surface of a 200 mu m-thick double-side polished high-resistance indium phosphide supporting sheet 13 is provided with a micro lens 18 by using a photoetching technology and an etching technology, and the periphery of the supporting sheet 13 is provided with a through hole 15 by using a laser drilling technology. The front surface of the supporting sheet 13 is deposited with thickness by using plasma chemical vapor deposition technology
The front surface of the supporting sheet is silicon nitride 16, and the back surface of the supporting sheet 13 is deposited to a thickness by using the plasma chemical vapor deposition technology
Back side of the support sheet of silicon nitride 12. The back electrode 11 of the titanium/platinum/gold support sheet, the light through hole 19 of the support sheet, the front electrode 17 of the support sheet and the inner electrode 14 of the through hole of the support sheet are respectively prepared by adopting a magnetron sputtering technology, a photoetching technology, an electroplating technology and a reactive ion etching technology.
And permanently bonding the p electrode and the back electrode 11 of the supporting piece by utilizing a gold-gold bonding technology for the InGaAs epitaxial wafer and the InP supporting piece 13 after the processes are finished. And thinning and polishing the back of the bonded InGaAs epitaxial wafer to the thickness of 25 mu m, and preparing an n electrode 5 by adopting a photoetching technology, a dry etching technology and an electron beam evaporation technology. Completely cutting off the photosensitive detection region 7 on the bulk material by adopting a plasma chemical vapor deposition technology, a photoetching technology and a dry etching technology, and depositing on the surface and the side wall of the photosensitive detection region 7 by utilizing the plasma chemical vapor deposition technology
A photosensitive detection region passivation film 6. And then, the silicon nitride on the surface of the n electrode 5 is etched cleanly by adopting a photoetching technology and a dry etching technology. By the use of IAnd a shielding layer 4 is covered on the photosensitive probe region with the test performance not meeting the requirement by the V test technology and the photoetching technology.
The prepared detection chip utilizes indium column flip interconnection technology to realize interconnection of the n electrode 5 of the detection chip and the read circuit pad2 of the read circuit 1 through the indium column 3, and utilizes bottom glue filling technology to complete filling and curing of epoxy glue between the read circuit 2 and the detection chip.
(III) advantageous effects
The crosstalk-free indium gallium arsenic Geiger mode focal plane detection chip structure and the manufacturing method have the following beneficial effects:
(1) the InGaAsGeiger mode focal plane array photosensitive chip completely realizes the isolation of each photosensitive detection region on a bulk material through dry etching, and can effectively eliminate the electrical and optical crosstalk generated between the photosensitive detection regions through the convergence action of the micro-lens, and simultaneously ensures high filling factors. The thick bonding gold electrode can block photon absorption at the edge of the pn junction of each detection area, and can effectively reduce the back pulse generated by the photon absorption at the edge of the pn junction.
(2) The single array photosensitive chip of the InGaAsGeleather mode focal plane has the size of 2.5mm multiplied by 2.5mm, consists of 32 multiplied by 32 photosensitive detection areas, has high single photon detection efficiency and low dark counting rate, and can be applied to laser ranging and laser radar. The distance between the photosensitive detection regions of the detection chip is 60 mu m, 8 mu m breaking grooves are formed between pn junctions of the photosensitive detection regions, and the photosensitive detection regions are permanently bonded on a support sheet with a micro-lens array before breaking, so that no electric and optical crosstalk is generated between the photosensitive detection regions and high filling factors are ensured.
(3) The method can realize the manufacture of the InGaAs Geiger mode focal plane photosensitive array which has large scale and low crosstalk and can share the same type of reading circuit with the silicon-based Geiger mode focal plane detector.
Drawings
FIG. 1 is a schematic top view of a cross-talk free InGaAsGeiger mode focal plane probing chip according to the present invention.
FIG. 2 is a schematic diagram of the back side of the chip support chip for cross-talk free InGaAsGeiger mode focal plane detection.
FIG. 3 is a front view of a chip support chip for cross-talk free InGaAsGeiger mode focal plane detection according to the present invention.
Fig. 4 is a cross-sectional schematic diagram of a cross-talk-free ingaas geiger-mode focal plane probing chip in accordance with the present invention.
Description of reference numerals: 1 a readout circuit; 2 a readout circuit pad; 3, indium columns; 4, a shielding layer; a 5n electrode; 6, a passivation film for a photosensitive detection region; 7 a photosensitive detection region; 8, silicon nitride antireflection film; a 9p electrode; 10 an epoxy resin; 11 supporting a chip back electrode; 12 supporting the silicon nitride on the back of the wafer; 13 a support sheet; 14 supporting the in-hole electrode of the sheet; 15 through holes; 16 supporting the front surface silicon nitride of the sheet; supporting the sheet front electrode; 18 micro lenses; the support sheet 19 supports the light through hole.
Detailed Description
In order to make the objects, contents and advantages of the present invention clearer, the following detailed description of the embodiments of the present invention will be made in conjunction with the accompanying drawings and examples.
As shown in fig. 1 to 4, the cross-talk-free ingaas geiger-mode focal plane probing chip structure of the present invention includes: the InGaAs epitaxial wafer has 32 × 32 photosensitive detection regions 7, p-electrodes 9 of the 32 × 32 photosensitive detection regions 7 on the photosensitive array chip are permanently bonded with back electrodes 11 of a support sheet 13 by gold, and the periphery of each photosensitive detection region 7 completely cut on the bulk material is covered by a photosensitive detection region passivation film 6. The n-electrodes 5 of the photosensitive detection regions 7 may be interconnected to a readout circuit pad2 through indium studs 3 to enable processing of signals at the readout circuit 1. The p-electrode 9 of the photosensitive detection region 7 is communicated with the front electrode 17 of the supporting sheet with the array of micro-lenses 18 through the through hole inner electrode 14 of the supporting sheet.
The distance between adjacent photosensitive detection regions is 60 μm, the diameter of each independent photosensitive detection region is 25 μm, and the depth of each independent photosensitive detection region is 25 μm; the probing chip size is 2.5mm × 2.5 mm.
The InGaAs epitaxial wafer includes: the n-type doping concentration is 3-8 x 1018/cm3Formed on the InP substrate with a thickness of 1 μm and an n-type doping concentration of 3X 1016/cm3PhosphatingAn indium transition layer formed on the indium phosphide transition layer and having a thickness of 2.5 μm and an n-type impurity concentration of 1-2X 1015/cm3Indium gallium arsenide (In)0.53Ga0.47As) light absorbing layer formed on the InGaAs light absorbing layer and having a thickness of 0.15 μm and an n-type doping concentration of 3 × 1016/cm3Indium gallium arsenic phosphorus (In)0.76Ga0.24As0.51P0.49) An energy band transition layer with a thickness of 0.2 μm and an n-type doping concentration of 1.25 × 1017/cm3The indium phosphide charge layer of (1); a thickness of 3.5 μm, and an n-type impurity concentration of 7X 10 formed on the InP charge layer14/cm3The top indium phosphide layer.
The manufacturing method of the crosstalk-free indium gallium arsenide Geiger mode focal plane detection chip comprises the following steps of:
firstly, preparing an indium gallium arsenic epitaxial wafer:
the InGaAs epitaxy used in this example was performed by Metal Organic Chemical Vapor Deposition (MOCVD) technique with n-type doping concentration of 3-8X 1018/cm3The 100 crystal orientation indium phosphide substrate is subjected to epitaxy in sequence: thickness of 1 μm, n-type doping concentration of 3 × 1016/cm3An indium phosphide transition layer; thickness of 2.5 μm, n-type impurity concentration of 1-2 × 1015/cm3Indium gallium arsenide (In)0.53Ga0.47As) light absorbing layer; the thickness is 0.15 μm, and the n-type doping concentration is 3 × 1016/cm3Indium gallium arsenic phosphorus (In)0.76Ga0.24As0.51P0.49) An energy band transition layer; the thickness is 0.2 μm, and the n-type doping concentration is 1.25 × 1017/cm3The indium phosphide charge layer of (1); thickness of 3.5 μm, n-type doping concentration of 7 × 1014/cm3The top indium phosphide layer.
Secondly, preparing an indium gallium arsenide geiger mode focal plane detection chip:
firstly, on the prepared InGaAs epitaxial wafer, the plasma chemical vapor deposition technique is used to grow the thickness
Silicon nitride of (2). 32 multiplied by 32 small circular diffusion windows with the diameter of 25 mu m are manufactured on the silicon nitride layer by adopting the photoetching technology and the etching technology, zinc diffusion is carried out in an open-tube high-temperature diffusion mode, PN junctions with the diameter of 25 mu m and the depth of 2.5 mu m are formed in the indium phosphide on the top layer, and small unit APDs are formed one by one. Secondly, growing the thickness by using a plasma chemical vapor deposition technology
The silicon nitride antireflection film 8 is used for manufacturing the electrode hole of each photosensitive detection area through a photoetching technology and a dry etching technology. The titanium/platinum/gold p electrode 9 of the detection chip is prepared by adopting the technologies of photoetching, electron beam evaporation, 430 ℃ alloy, gold electroplating, metal etching and the like.
The front surface of a 200 mu m-thick double-side polished high-resistance indium phosphide supporting sheet 13 is provided with a micro lens 18 by using a photoetching technology and an etching technology, and the periphery of the supporting sheet 13 is provided with through holes 15 by using a laser drilling technology. The front surface of the supporting sheet 13 is deposited with thickness by using plasma chemical vapor deposition technology
The front surface of the supporting sheet is silicon nitride 16, and the back surface of the supporting sheet 13 is deposited to a thickness by using the plasma chemical vapor deposition technology
Back side of the support sheet of silicon nitride 12. The back electrode 11 of the titanium/platinum/gold support sheet, the light through hole 19 of the support sheet, the front electrode 17 of the support sheet and the inner electrode 14 of the through hole of the support sheet are respectively prepared by adopting a magnetron sputtering technology, a photoetching technology, an electroplating technology and a reactive ion etching technology.
And permanently bonding the p electrode and the back electrode 11 of the supporting piece by utilizing a gold-gold bonding technology for the InGaAs epitaxial wafer and the InP supporting piece 13 after the processes are finished. And thinning and polishing the back of the bonded InGaAs epitaxial wafer to the thickness of 25 mu m, and preparing the n electrode 5 by adopting a photoetching technology, a dry etching technology and an electron beam evaporation technology. Complete cutting off of the photosensitive detection region 7 on the bulk material is accomplished by using plasma chemical vapor deposition, photolithography, and dry etchingThen depositing on the surface and the side wall of the photosensitive detection region 7 by using a plasma chemical vapor deposition technology
A photosensitive detection region passivation film 6. And then, the silicon nitride on the surface of the n electrode 5 is etched cleanly by adopting a photoetching technology and a dry etching technology. And covering a shielding layer 4 on the photosensitive probe region with the performance not meeting the requirement by adopting an IV test technology and a photoetching technology.
The prepared detection chip utilizes indium column flip interconnection technology to realize interconnection of the n electrode 5 of the detection chip and the read circuit pad2 of the read circuit 1 through the indium column 3, and utilizes bottom glue filling technology to complete filling and curing of epoxy glue between the read circuit 2 and the detection chip.
The detector prepared by the InGaAs Geiger-mode focal plane detection chip structure without crosstalk and the manufacturing method thereof has the working principle that: when the avalanche photodiode APD operates under a reverse bias condition, photo-generated carriers undergo avalanche due to internal impact ionization, providing a large internal gain, which is called a linear operation mode. When the voltage is increased continuously, the gain is increased continuously, and when the voltage is increased to a certain extent, namely the breakdown voltage of the APD is exceeded, even a single photon excited carrier can cause a self-sustaining avalanche effect to generate a detectable current signal, which is called a Geiger working mode. When the device is applied to the conditions of laser ranging, laser radar, time-dependent counting and the like, photons arrive randomly, the arrival time of the photons cannot be predicted in advance, and the APD of a photosensitive detection area of the device needs to work in a long-gating or free-running working mode. Each APD of the detector is always biased above breakdown voltage, when an incident photon is triggered to be avalanche, a circuit timely quenches avalanche needing to be avalanche, and then steps of dead time control, restoration and the like are completed, so that information such as distance, three-dimensional characteristics and the like carried by a single photon signal is obtained.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, it is possible to make various improvements and modifications without departing from the technical principle of the present invention, and those improvements and modifications should be considered as the protection scope of the present invention.
Claims (9)
1. The utility model provides a chip structure is surveyed to no indium gallium arsenide geiger mode focal plane which characterized in that includes: the device comprises an indium gallium arsenic epitaxial wafer and a support sheet (13), wherein the indium gallium arsenic epitaxial wafer is provided with 32 x 32 photosensitive detection areas (7), p electrodes (9) of the 32 x 32 photosensitive detection areas (7) are permanently bonded with a back electrode (11) of the support sheet on the support sheet (13) through gold, and the periphery of each photosensitive detection area (7) which is completely cut on a bulk material is covered by a photosensitive detection area passivation film (6); an n electrode (5) of the photosensitive detection area (7) is interconnected with a read-out circuit pad (2) through an indium column (3) to realize the processing of signals in the read-out circuit (1); the p-electrode (9) of the photosensitive detection region (7) is communicated with the back electrode (11) of the supporting sheet and the front electrode (17) of the supporting sheet with a micro-lens (18) array through the inner electrode (14) of the through hole of the supporting sheet.
2. The cross-talk free ingaas geiger-mode focal plane probing chip structure according to claim 1 wherein the spacing between adjacent photosensitive probe regions (7) is 60 μm and the individual photosensitive probe regions (7) have a diameter of 25 μm and a depth of 25 μm.
3. The crosstalk-free indium gallium arsenide geiger mode focal plane probing chip structure of claim 2 wherein said indium gallium arsenide epitaxial wafer comprises: the indium phosphide substrate and an indium phosphide transition layer, an indium gallium arsenic light absorption layer, an indium gallium arsenic phosphorus energy band transition layer, an indium phosphide charge layer and a top indium phosphide layer which are sequentially formed on the indium phosphide substrate.
4. The cross-talk free InGaAsGeiger-mode focal plane probe chip structure of claim 3, wherein said InP substrate is n-type with a doping concentration of 3-8 x 1018/cm3The substrate of 100-crystal-orientation indium phosphide.
5. The cross-talk free InGaAsGeiger-mode focal plane probing chip structure as claimed in claim 4 wherein said InP transition layer is 1 μ thickThe doping concentration of m and n is 3 multiplied by 1016/cm3An indium phosphide transition layer.
6. The crosstalk-free InGaAs Geiger-mode focal plane probe chip structure as claimed in claim 5, wherein the InGaAs light-absorbing layer has a thickness of 2.5 μm and an n-type impurity concentration of 1-2 x 1015/cm3In (2) of0.53Ga0.47An As light absorbing layer.
7. The crosstalk-free InGaAsGeiger-mode focal plane probe chip structure of claim 6, in which the InGaAsP band transition layer is 0.15 μm thick with an n-type doping concentration of 3 x 1016/cm3In (2) of0.76Ga0.24As0.51P0.49An energy band transition layer.
8. The cross-talk free InGaAsGeiger-mode focal plane probing chip structure of claim 7, wherein said InP charge layer is 0.2 μm thick with an n-type doping concentration of 1.25 x 1017/cm3The indium phosphide charge layer of (1); the top indium phosphide layer had a thickness of 3.5 μm and an n-type impurity concentration of 7X 1014/cm3The top indium phosphide layer.
9. A method for manufacturing a crosstalk-free indium gallium arsenide Geiger mode focal plane detection chip is characterized by comprising the following steps of:
first, an InGaAs epitaxial wafer is prepared
By using metal organic chemical vapor deposition technology, the doping concentration of n type is 3-8 x 1018/cm3The 100 crystal orientation indium phosphide substrate is subjected to epitaxy in sequence: thickness of 1 μm, n-type doping concentration of 3 × 1016/cm3An indium phosphide transition layer; thickness of 2.5 μm, n-type impurity concentration of 1-2 × 1015/cm3The indium gallium arsenic light absorbing layer; the thickness is 0.15 μm, and the n-type doping concentration is 3 × 1016/cm3The indium gallium arsenic phosphorus energy band transition layer; the thickness is 0.2 μm, and the n-type doping concentration is 1.25 × 1017/cm3The indium phosphide charge layer of (1); thickness of 3.5 μm, n-type doping concentration of 7 × 1014/cm3The top indium phosphide layer;
secondly, preparing an indium gallium arsenide Geiger mode focal plane detection chip
Firstly, on the prepared InGaAs epitaxial wafer, the plasma chemical vapor deposition technique is used to grow the thickness
Silicon nitride of (2); manufacturing 32 multiplied by 32 small circular diffusion windows with the diameter of 25 mu m on the silicon nitride layer by adopting a photoetching technology and an etching technology, performing zinc diffusion in an open-tube high-temperature diffusion mode, forming PN junctions with the diameter of 25 mu m and the depth of 2.5 mu m in the indium phosphide on the top layer, and forming small unit APDs one by one; secondly, growing the thickness by using a plasma chemical vapor deposition technology
The silicon nitride antireflection film (8) is used for manufacturing an electrode hole of each photosensitive detection area by a photoetching technology and a dry etching technology; preparing a titanium/platinum/gold p electrode (9) of the detection chip by adopting the technologies of photoetching, electron beam evaporation, alloy at 430 ℃, gold electroplating and metal etching;
preparing a micro lens (18) on the front surface of a 200 mu m-thick double-side polished high-resistance indium phosphide supporting sheet (13) by using a photoetching technology and an etching technology, and preparing through holes (15) on the periphery of the supporting sheet (13) by using a laser drilling technology; depositing a thickness on the front side of the support sheet (13) by using a plasma chemical vapor deposition technique
The front surface of the supporting sheet is silicon nitride (16), and the back surface of the supporting sheet (13) is deposited to the thickness by using the plasma chemical vapor deposition technology again
Back side silicon nitride (12) of the support sheet; respectively preparing a back electrode of the titanium/platinum/gold support sheet by adopting a magnetron sputtering technology, a photoetching technology, an electroplating technology and a reactive ion etching technologyThe electrode (11), the supporting sheet light through hole (19), the supporting sheet front electrode (17) and the supporting sheet through hole inner electrode (14);
permanently bonding the p electrode (9) and the back electrode (11) of the supporting piece by utilizing gold-gold bonding for the InGaAs epitaxial wafer and the InP supporting piece (13) after the process is finished; thinning and polishing the back of the bonded InGaAs epitaxial wafer to the thickness of 25 mu m, and preparing an n electrode (5) by adopting a photoetching technology, a dry etching technology and an electron beam evaporation technology; the complete cutting off of the photosensitive detection region (7) on the bulk material is completed by adopting a plasma chemical vapor deposition technology, a photoetching technology and a dry etching technology, and then the plasma chemical vapor deposition technology is utilized to deposit on the surface and the side wall of the photosensitive detection region (7)
A photosensitive detection region passivation film (6); then, the silicon nitride on the surface of the n electrode (5) is etched cleanly by adopting a photoetching technology and a dry etching technology; covering a shielding layer (4) on the photosensitive probe region which does not meet the requirement of the test performance by adopting an IV test technology and a photoetching technology;
the prepared detection chip utilizes indium column flip interconnection technology to realize interconnection between an n electrode (5) of the detection chip and a read circuit pad (2) of a read circuit (1) through an indium column (3), and utilizes bottom glue filling technology to complete filling and curing of epoxy glue between the read circuit (2) and the detection chip.
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