CN114533054A - Flexible fNIRS detection device and preparation method thereof - Google Patents
Flexible fNIRS detection device and preparation method thereof Download PDFInfo
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- 238000001514 detection method Methods 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title claims description 8
- 239000000463 material Substances 0.000 claims abstract description 47
- 238000001259 photo etching Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 239000011651 chromium Substances 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 229910052804 chromium Inorganic materials 0.000 claims description 26
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 24
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 17
- 239000010931 gold Substances 0.000 claims description 17
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 16
- 229910052737 gold Inorganic materials 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- -1 polydimethylsiloxane Polymers 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 238000005019 vapor deposition process Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 238000001029 thermal curing Methods 0.000 claims 1
- 238000005452 bending Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 210000004556 brain Anatomy 0.000 description 3
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 3
- 238000004497 NIR spectroscopy Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000019771 cognition Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 230000003925 brain function Effects 0.000 description 1
- 230000002490 cerebral effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001149 cognitive effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005714 functional activity Effects 0.000 description 1
- 238000002599 functional magnetic resonance imaging Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001537 neural effect Effects 0.000 description 1
- 230000007230 neural mechanism Effects 0.000 description 1
- 230000003702 neurovascular coupling effect Effects 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/145—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue
- A61B5/1455—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters
- A61B5/14551—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters for measuring blood gases
- A61B5/14553—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters for measuring blood gases specially adapted for cerebral tissue
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/68—Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient
- A61B5/6801—Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient specially adapted to be attached to or worn on the body surface
- A61B5/6802—Sensor mounted on worn items
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
- A61B2562/16—Details of sensor housings or probes; Details of structural supports for sensors
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- Pathology (AREA)
- Engineering & Computer Science (AREA)
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- Public Health (AREA)
- Medical Informatics (AREA)
- General Health & Medical Sciences (AREA)
- Surgery (AREA)
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Abstract
A flexible fNIRS detection device comprises a first flexible material layer and a flexible circuit arranged on the first flexible material layer, wherein a second flexible material layer is wrapped on the flexible circuit; the flexible circuit is provided with components, and the components are arranged on the flexible circuit through photoetching bonding; compared with the prior art, the detection device made of flexible materials can adapt to the smaller bending radius of the head of an infant, is light and thin, enables people to have no foreign body feeling when the infant is worn, can be attached to the skin in a conformal mode with lower elastic modulus, and exerts the performances of the light source and the detector to the maximum extent. The chip is thinned, so that a smaller gap can be formed when the chip is attached to the skin, and meanwhile, the traditional gold wire bonding is replaced by a photoetching method, so that the problem that the chip is easy to lose efficacy in contact with the skin after the gold wire bonding is solved.
Description
Technical Field
The invention relates to the technical field of functional near infrared spectroscopy, in particular to a flexible fNIRS detection device and a preparation method thereof.
Background
The functional near-infrared spectroscopy (fNIRS) utilizes the good scattering property of the main components of blood to the 600-.
At present, the technology is applied to the research in multiple fields of advanced cognition, developing psychology, abnormal psychology and the like under natural situations. The technology has the advantages of low manufacturing cost, good portability, no noise, no non-invasiveness, no excessive sensitivity to the tested action in the experimental process and the like, but also has the defects of low spatial resolution, further improvement on a correction algorithm and the like. The future research of the fNIRS can be combined with other imaging technologies such as fMRI and the like to develop cognitive neuroscience research of infants and special crowds and neural mechanism research of brain cognition in natural situations.
The fNIRS mainly utilizes the characteristics of low absorption and high scattering of human tissues in a near infrared band. The light source emits incident light which is received by the detector. The emergent light carries the HBO of cerebral cortex2And HB concentration information. Neural activity of the brain can cause local HBO due to the presence of neurovascular coupling mechanism2An increase in concentration and a decrease in HB concentration. Thus can pass HBO2And the concentration change of HB reflects the functional activity of brain and realizes the brain function imaging. When the fNIRS imaging system is used, a collection cap is generally worn on the head, but a light source and a detector of the fNIRS imaging system cannot be well coupled with the skin, a part of light is lost, and the accuracy of signals is greatly interfered. Gold wire bonding is a key technology for realizing electrical interconnection of a chip and a circuit, directly influences the reliability and stability of the circuit and has very good stability to the circuitA large influence. However, in flexible circuits, gold wire ball bonding cannot be directly bonded to a flexible substrate. Meanwhile, in the manufacturing of the device, the first welding point and the second welding point of the gold wire are not on the same horizontal plane, so that the breakage failure of the gold wire is easily caused.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a flexible fNIRS detector which is well adapted to the bending change of a human head and realizes good coupling of a detection element and the head and a preparation method thereof.
In order to achieve the purpose, the invention adopts the following technical scheme: a flexible fNIRS detection device comprises a first flexible material layer and a flexible circuit arranged on the first flexible material layer, wherein a second flexible material layer is wrapped on the flexible circuit; and the flexible circuit is provided with components, and the components are arranged on the flexible circuit through photoetching bonding.
A preparation method of a flexible fNIRS detection device comprises the following steps:
step A: preparing a flexible material layer, namely spin-coating a sacrificial layer and a substrate material layer on a clean silicon wafer in sequence, and forming a first flexible material layer by gradient thermal drying and curing;
and B: preparing a flexible circuit, namely sputtering chromium and gold on a silicon wafer which is spin-coated with a flexible lining body by utilizing magnetron sputtering, and forming the flexible circuit by positive photoresist photoetching;
and C: thinning the chip mechanically and chemically, sputtering a layer of titanium, chromium and gold to form ohmic contact at the bottom of the chip, and adhering the chip to a flexible circuit by using conductive silver paste;
step D: photoetching and bonding: spin-coating a layer of photoresist on the surface of the component, exposing the bonding wire part, sputtering Cr and AU on the surface of the component after development, and forming a bonding wire by lifting;
step E: and forming a second flexible material layer, wherein the second flexible material layer is arranged on the flexible circuit to wrap the component and expose the part of the flexible circuit interface.
In a preferred embodiment of the present invention, the silicon wafer is plasma-cleaned with oxygen before processing to form a rough surface on the surface of the silicon wafer.
In a preferred embodiment of the present invention, the sacrificial layer is polymethyl methacrylate, and the substrate material layer is polyimide, parylene, or polydimethylsiloxane.
In a preferred embodiment of the present invention, the flexible circuit comprises chromium having a thickness of 50nm and gold having a thickness of 200 nm.
As a preferable scheme of the present invention, in the step B, the silicon wafer after sputtering the chromium and the gold is placed on a spin coater, the photoresist is dripped on the silicon wafer, and the spin coater rotates to uniformly scatter the photoresist to form the mask layer.
As a preferred scheme of the invention, the mask plate corresponding to the mask layer is selected, the mask plate is placed on a photoetching machine, an ultraviolet exposure process is adopted, the pattern on the mask plate is transferred onto the mask layer, the mask plate is a chromium plate, the pattern on the mask plate is a set flexible circuit, after exposure is completed, the mask layer is developed by using a developing solution to obtain a patterned mask layer, and the mask layer blocks the flexible circuit area.
As a preferred scheme of the invention, after the development of the developing solution is finished, the gold etching solution and the chromium etching solution are sequentially put on the mask layer, the acetone solution is put in the mask layer, and the mask layer above the flexible circuit is washed away.
As a preferred scheme of the invention, after the flexible circuit in the step B is formed, dipping conductive silver paste to be uniformly coated on a boss of the flexible circuit, pressing the thinned component on the boss containing the conductive silver paste, waiting for 5-10min, attaching the component on the flexible circuit, placing a silicon wafer containing the component on a spin coater, dripping photoresist on the silicon wafer, scattering the photoresist by the spin coater, taking the photoresist as a mask layer, selecting a mask plate corresponding to the mask layer, placing the mask plate on a photoetching machine, adopting an ultraviolet exposure process to transfer a pattern on the mask plate onto the mask layer, wherein the mask plate is a chromium plate, the pattern on the mask plate is a bonding line connecting the component and the flexible circuit, after exposure is finished, developing the mask layer by using a developing solution to obtain a patterned mask layer, and enabling the mask layer to block other parts except the bonding line, and sputtering chromium and copper solution on the surface of the pattern through magnetron sputtering, and putting the pattern into acetone solution for lifting to form a bonding wire.
As a preferred scheme of the present invention, in the step E, a second flexible material layer is deposited on the microneedle array by using a vapor deposition process, the second flexible material layer is made of parylene, a layer of copper liquid is sputtered on the surface of the component, a layer of photoresist is spin-coated on the copper liquid, the photoresist is exposed by using a laser direct writing device, the exposed portion is an interface portion of the flexible circuit, the photoresist at the interface portion of the flexible circuit is developed and removed, the copper liquid at the interface portion of the flexible circuit is removed by using a copper etching liquid, the parylene at the interface portion of the flexible circuit is exposed, and other portions of the parylene are shielded by the copper liquid, and then the exposed parylene is etched by using oxygen in an etching machine, and the interface portion of the flexible circuit is finally exposed so as to transmit an electrical signal.
Compared with the prior art, the invention has the beneficial effects that:
1. through the detection device who adopts flexible material, can adapt to even the less bending radius of infant's head, light, thin make people have no foreign object sense when wearing, lower elastic modulus can with the conformal laminating of skin, exert the performance of light source and detector to the at utmost. The chip is thinned, so that the chip has smaller gaps when being attached to the skin;
2. the structure is simple, the performance is stable, and the good measurement performance is ensured while the requirement of the wearable sensor is met; the used flexible substrate and the used packaging layer are both polymer materials which can meet the requirements of medical level, have certain stretchability and can be well coupled with the head;
3. the photoetching method is adopted to replace the traditional gold wire bonding, so that the problem that the gold wire is easy to lose efficacy in contact with the skin after being bonded is avoided.
Drawings
FIG. 1 is a top view of the present invention;
FIG. 2 is a schematic of the process of the present invention;
FIG. 3 is a schematic flow diagram of the present invention;
reference numerals: the flexible circuit comprises a flexible circuit 1, a second flexible material layer 2, a first flexible material layer 3, a silicon chip 4, conductive silver paste 5 and a bonding wire 6.
Detailed Description
The following describes embodiments of the present invention in detail with reference to the accompanying drawings.
As shown in fig. 1-3, a flexible fNIRS detector comprises a first flexible material layer 3 and a flexible circuit 1 disposed on the first flexible material layer 3, wherein a second flexible material layer 2 is wrapped on the flexible circuit 1; and the flexible circuit 1 is provided with components, and the components are arranged on the flexible circuit 1 through photoetching bonding.
A preparation method of a flexible fNIRS detection device comprises the following steps:
step A: and preparing a flexible material layer, namely selecting a hard silicon wafer as a substrate, and carrying out plasma cleaning on the silicon wafer 4 by adopting oxygen before processing, wherein the cleaning time is 10min, and a rough surface is formed on the surface of the silicon wafer 4, so that a mask layer which is subsequently spun is not easy to fall off.
And spin-coating a sacrificial layer and a substrate material layer on the clean silicon wafer 4 in sequence, and baking and curing according to gradient to form a first flexible material layer 3.
Wherein the sacrificial layer is polymethyl methacrylate PMMA, and the substrate material layer is polyimide PI or Parylene or polydimethyl siloxane PDMS, and is preferred, and polyimide PI material is chooseed for use to the substrate material layer, has better flexibility and adhesion, can make things convenient for follow-up preparation conducting layer, and the thickness of first flexible material layer 3 is 5um, and thickness too thin can influence surface components and parts's stability, and too thick can restrict components and parts's flexibility.
And B: as shown in fig. two (a) (b), a flexible circuit 1 is prepared, chromium and gold are sputtered on a silicon chip 4 which is coated with a flexible lining body in a spin mode through magnetron sputtering, the flexible circuit 1 is formed through positive photoresist photoetching, specifically, chromium Cr with the thickness of 50nm and gold Au with the thickness of 200nm are sputtered on the silicon chip 4 which is coated with the flexible lining body in a spin mode through magnetron sputtering, and the flexible circuit 1 is formed through positive photoresist photoetching.
As shown in a second figure (c), a silicon chip 4 sputtered with chromium Cr and gold Au is placed on a spin coater, the rotating speed is set to be 500-10 s and 3000-30 s, photoresist is dripped on the silicon chip 4, the spin coater rotates to uniformly break up the photoresist to form a mask layer, a mask plate corresponding to the mask layer is selected and placed on a photoetching machine, an ultraviolet exposure process is adopted, the exposure time is 14s, the pattern on the mask plate is transferred onto the mask layer, the mask plate is a chromium plate, the pattern on the mask plate is a set flexible circuit 1, after exposure is completed, the distance from a light source to a detector is 35mm and 40mm, after exposure is completed, the mask layer is developed by using a developing solution to obtain a patterned mask layer, and the region of the mask layer 1 is blocked.
After the development of the developing solution is finished, gold etching solution and chromium etching solution are sequentially placed on the mask layer, acetone solution is placed, the mask layer above the flexible circuit 1 is washed away, and the distance between the light source and the detector can be designed according to requirements so as to design a proper flexible circuit.
And C: as shown in fig. two (d) (e), after the flexible circuit 1 is formed, dipping a small amount of conductive silver paste 5 and uniformly coating the conductive silver paste on a boss of the flexible circuit 1, slightly pressing the thinned component on the boss containing the small amount of conductive silver paste 5, waiting for 5-10min, attaching the component to the flexible circuit 1, placing a silicon wafer 4 containing the component on a glue spreader, thinning the component in a mechanical and chemical grinding and polishing mode, sputtering a layer of titanium, chromium and gold to form ohmic contact at the bottom of the component, and adhering the component to the flexible circuit 1 by using the conductive silver paste 5;
step D: photoetching and bonding: and spin-coating a layer of photoresist on the surface of the component, exposing the bonding line 6, sputtering Cr and AU on the surface of the component after development, and forming the bonding line 6 by lifting.
Specifically, photoresist is dripped on a silicon wafer 4, the photoresist is scattered by the rotation of a spin coater, the rotation speed is set to be 500-10 s, 3000-30 s, the photoresist is used as a mask layer, a mask plate corresponding to the mask layer is selected, the mask plate is placed on a photoetching machine, an ultraviolet exposure process is adopted, the exposure time is 14s, a pattern on the mask plate is transferred onto the mask layer, the mask plate is a chromium plate, the pattern on the mask plate is a bonding line 6 for connecting a component and a flexible circuit 1, after exposure is completed, the mask layer is developed by using a developing solution to obtain a patterned mask layer, the mask layer blocks other parts except the bonding line 6, chromium and copper solutions are sputtered on the surface of the pattern through magnetron sputtering, and an acetone solution is placed to lift off to form the bonding line 6.
Step E: and forming a second flexible material layer 2, wherein the second flexible material layer 2 is arranged on the flexible circuit 1 to wrap the components and expose parts of the interface of the flexible circuit 1.
The second flexible material layer 2 is deposited on the microneedle array by using a vapor deposition process, the second flexible material layer 2 is made of Parylene material, Parylene has good shape retention, components can be firmly coated, the effects of shape retention and support are achieved, meanwhile, the invasion of various corrosive gases such as acid-base, salt mist and mould can be resisted, the flexible microneedle array has good tensile property and can be well attached to the surface of skin, the thickness of the second flexible material layer 2 is 5 microns, the device cannot be well protected when the thickness is too thin, and the flexibility of the device can be limited when the thickness is too thick
Firstly sputtering a layer of copper liquid on the surface of a component, spin-coating a layer of photoresist on the surface, carrying out exposure treatment on the photoresist through laser direct writing equipment, wherein the exposed part is the interface part of the flexible circuit 1, then developing and removing the photoresist positioned at the interface part of the flexible circuit 1, removing the copper liquid positioned at the interface part of the flexible circuit 1 by using copper etching liquid, exposing the parylene positioned at the interface part of the flexible circuit 1, and shielding other parts of the parylene by the copper liquid, then placing the flexible circuit into an etching machine, etching the exposed parylene by using oxygen, and finally exposing the interface part of the flexible circuit 1 so as to transmit electric signals.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention; thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Although the reference numerals in the figures are used more here: flexible circuit 1, second layer of flexible material 2, first layer of flexible material 3, silicon wafer 4, conductive silver paste 5, bonding wires 6, etc., without excluding the possibility of using other terms. These terms are used merely to more conveniently describe and explain the nature of the present invention; they are to be construed as being without limitation to any additional limitations that may be imposed by the spirit of the present invention.
Claims (10)
1. The flexible fNIRS detection device is characterized by comprising a first flexible material layer (3) and a flexible circuit (1) arranged on the first flexible material layer (3), wherein a second flexible material layer (2) is wrapped on the flexible circuit (1); and the flexible circuit (1) is provided with components, and the components are arranged on the flexible circuit (1) through photoetching bonding.
2. A preparation method of a flexible fNIRS detection device is characterized by comprising the following steps:
step A: preparing a flexible material layer, namely spin-coating a sacrificial layer and a substrate material layer on a clean silicon wafer (4) in sequence, and forming a first flexible material layer (3) according to gradient thermal curing;
and B: preparing a flexible circuit (1), sputtering chromium and gold on a silicon wafer (4) which is spin-coated with a flexible lining body by utilizing magnetron sputtering, and forming the flexible circuit (1) by positive photoresist photoetching;
and C: thinning the chip in a mechanical and Chemical (CMP) mode, sputtering a layer of titanium, chromium and gold to form ohmic contact at the bottom of the chip, and adhering the chip to the flexible circuit (1) by using conductive silver paste (5);
step D: photoetching and bonding: spin-coating a layer of photoresist on the surface of the component, exposing the bonding line (6), sputtering Cr and AU on the surface after developing, and forming the bonding line (6) by lifting;
step E: and forming a second flexible material layer (2), wherein the second flexible material layer (2) is arranged on the flexible circuit (1) to wrap the components and expose the interface part of the flexible circuit (1).
3. The method for preparing a flexible fNIRS detector device according to claim 2, characterized in that the silicon wafer (4) is plasma-cleaned with oxygen before processing to form a rough surface on the surface of the silicon wafer (4).
4. The method of claim 3, wherein the sacrificial layer is polymethylmethacrylate and the substrate material layer is polyimide or parylene or polydimethylsiloxane.
5. A method of manufacturing a flexible fNIRS detection device according to claim 2, wherein the flexible circuit (1) comprises chromium of 50nm thickness and gold of 200nm thickness.
6. The method for preparing a flexible fNIRS detection device as claimed in claim 2, wherein in step B, the silicon wafer (4) after sputtering chromium and gold is placed on a spin coater, photoresist is dripped on the silicon wafer (4), and the spin coater rotates to uniformly spread the photoresist to form a mask layer.
7. The method for manufacturing the flexible fNIRS detection device as claimed in claim 1, wherein a mask plate corresponding to the mask layer is selected, the mask plate is placed on a lithography machine, the pattern on the mask plate is transferred onto the mask layer by adopting an ultraviolet exposure process, the mask plate is a chrome plate, the pattern on the mask plate is a set flexible circuit (1), after exposure is completed, the mask layer is developed by using a developing solution to obtain a patterned mask layer, and the mask layer blocks the area of the flexible circuit (1).
8. The method for preparing a flexible fNIRS detection device as claimed in claim 7, wherein after development with the developer solution is complete, a gold etchant and a chromium etchant are sequentially placed on the mask layer, an acetone solution is placed, and the mask layer above the flexible circuit (1) is washed away.
9. The method for preparing the flexible fNIRS detection device according to claim 2, wherein the flexible circuit (1) is dipped and uniformly coated on a boss of the flexible circuit (1) after being formed in the step B, the thinned component is pressed on the boss containing the conductive silver paste (5) for 5-10min, the component is attached to the flexible circuit (1), the silicon wafer (4) containing the component is placed on a spin coater, the photoresist is dripped on the silicon wafer (4), the spin coater is rotated to scatter the photoresist, the photoresist is used as a mask layer, a mask plate corresponding to the mask layer is selected and placed on a photoetching machine, the pattern on the mask plate is transferred to the mask layer by adopting an ultraviolet exposure process, the mask plate is a chromium plate, the pattern on the mask plate is a bonding line (6) connecting the component and the flexible circuit (1), and after exposure is finished, developing the mask layer by using a developing solution to obtain a patterned mask layer, blocking the other parts except the bonding wire (6) by the mask layer, sputtering chromium and copper solutions on the surface of the pattern by magnetron sputtering, and putting the pattern into an acetone solution for lifting off to form the bonding wire (6).
10. The method according to claim 2, wherein in the step E, a second flexible material layer (2) is deposited on the micro-needle array by a vapor deposition process, the second flexible material layer (2) is made of parylene, a layer of copper liquid is sputtered on the surface of the device, a layer of photoresist is spun on the copper liquid, the photoresist is exposed by a laser direct writing device, the exposed part is the interface part of the flexible circuit (1), the photoresist on the interface part of the flexible circuit (1) is developed and removed, the copper liquid on the interface part of the flexible circuit (1) is removed by a copper etching liquid, the parylene on the interface part of the flexible circuit (1) is exposed, the other part of the parylene is shielded by the copper liquid, and the exposed parylene is etched by oxygen in an etching machine, eventually exposing the interface portion of the flexible circuit (1) for the transfer of electrical signals.
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| US20020158944A1 (en) * | 2001-04-25 | 2002-10-31 | Yi-Jing Leu | Flexible circuit board and method of fabricating the same |
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