CN1145225C - Chip-type LED and its manufacture - Google Patents
Chip-type LED and its manufacture Download PDFInfo
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- CN1145225C CN1145225C CNB001377817A CN00137781A CN1145225C CN 1145225 C CN1145225 C CN 1145225C CN B001377817 A CNB001377817 A CN B001377817A CN 00137781 A CN00137781 A CN 00137781A CN 1145225 C CN1145225 C CN 1145225C
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- chip
- metal substrate
- bonding pads
- connecting portion
- wire connecting
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Abstract
The present invention relates to a chip-type LED and a manufacture method thereof. The surface of a metal base is plated with silver and is formed with a plurality of swifts after etched. Each swift is bonded with the chip at one end and is connected to the other opposite end by throwing, and a chip-type LED is formed after sealing compound and cutting are carried out on the metal base. The present invention can greatly reduces volume without taking a printed circuit board as a base material, and in addition, due to the fact that the metal base has the heat conducting and magnetic suction characteristics, the throwing efficiency can be enhanced, and the chip-type LED can be evenly absorbed on a machine platform, which is in convenient for operation.
Description
The present invention relates to a kind of chip-type LED and manufacture method thereof.
As known to, light-emitting diode (LED) has life-span length, power consumption hangs down and reaches advantages such as caloric value is little, it extensively applies to various indication purposes, and at different use objects, various multi-form light-emitting diodes are one after the other developed appearance, and the light-emitting diode that for example is used for mobile telephone display sidelight source is promptly different with traditional light-emitting diode in form.As shown in figure 10, the encapsulation of a traditional chip-type LED shown in the figure is finished and without the outside drawing before cutting apart, the structure of this chip-type LED is to be formed with several parallel copper wire 90 on a printed circuit board (PCB) 80 surfaces, the adjacent inner side edge of each copper wire 90 has extended to form several chip bonding pads 91 and copper contact 92 respectively, as shown in figure 11, wherein be installed with wafer 93 by elargol on the chip bonding pads 91, this wafer 93 is to utilize wire bonder to beat the copper contact of holding to relatively in addition 92 with gold thread.
Described printed circuit board (PCB) 80 bottom surfaces are formed with several copper contacts, and each copper contact corresponds respectively to described chip bonding pads 91 and copper contact 92, are electrically connected to constitute by the perforation plating mode therebetween; And the copper wire of printed circuit board (PCB) 80 bottom surfaces is used for welding in the future.
Described printed circuit board (PCB) 80 is after finishing steps such as gluing brilliant routing, promptly carry out sealing, as shown in figure 10, be to form multiple tracks strip adhesive layers 94 in printed circuit board (PCB) 80 surface, suitably with all copper contacts 92, chip bonding pads 91 and on wafer 93 complete involutions.Cut apart in crosscut mode subsequently perpendicular to adhesive layer 94, because adjacent chip bonding pads 91 is to interconnect by copper wire 90 with copper contact 92, so have the effect of series connection between adjacent light-emitting diode, so visual actual needs is divided into the light-emitting diode (LED) module assembly with an amount of luminescent wafer.
Though with the sidelight source of described chip-type LED applicable to mobile telephone display, too complicated on the manufacture craft, and product percent of pass is low and the finished product volume is big.
At first, aspect manufacture craft, be on printed circuit board (PCB) 80, to make circuit earlier in the past, promptly form described copper wire 90, chip bonding pads 91 and copper contact 92 etc., wherein copper contact 92 surfaces plate nickel oxide and gold layer in regular turn, be to utilize the ultrasonic Machining mode that gold thread is beaten respectively on wafer 93 and described copper contact 92 during routing, because there are nickel oxide and gold layer in copper contact 92 surfaces, so must there be higher melt just can make firm the beating on copper contact 92 of gold thread, but because of routing speed fast, do not having the down auxiliary of other heating measures, can't improve the steadiness of routing.And after sealing and being partitioned into finished product, in working order down,, the epoxy resin that constitutes adhesive layer 94 will be pullled to the gold thread formation of 92 of wafer 93 and copper contacts because of expansion because of wafer 93 can produce heat when shinny.And in original design, expanding with heat and contract with cold for this kind, phenomenon is existing to be estimated, so when routing, will give the gold thread tensile strength of 10g at least, but as previously mentioned, for want of heat the auxiliary of measure in the routing step, so be difficult to the bond strength that high melt point is strengthened gold thread, under this situation, to increase considerably gold thread, cause product qualified rate to reduce, thereby cost is improved because of the chance that adhesive layer 94 expands with heat and contract with cold and pulled apart.
In addition aspect volume, as shown in figure 12, since described light-emitting diodes piping with printed circuit board (PCB) 80 as base material, after its encapsulation is finished and is cut apart, printed circuit board (PCB) 80 is also as the part of light-emitting diode, because printed circuit board (PCB) 80 has suitable thickness, so will increase the volume of light-emitting diode, this certainly will be unfavorable for the miniaturization of product.
Therefore, the object of the invention is providing chip-type LED and the manufacture method thereof that a kind of volume is little, cost is low, make efficiency is high, product qualified rate is high.
For achieving the above object, according to an aspect of the present invention, the manufacture method of chip-type LED of the present invention comprises the following steps: to utilize a metal substrate as base material, and in metallic substrate surfaces and bottom surface silver coating, to improve its electrical connectivity; Carry out image transfer, circuit etching and on metal substrate, form several parallel coil holders at described metal substrate, on each coil holder relative side, extend to form chip bonding pads and wire connecting portion respectively; On the chip bonding pads of described coil holder, wafer is installed, and is carried out routing, make wafer and relative wire connecting portion connection; On described metal substrate, carry out sealing; And cut apart described metal substrate to constitute chip-type LED.
For achieving the above object, according to a further aspect in the invention, chip-type LED of the present invention, it comprises that a chip bonding pads, is positioned at the adhesive layer that gold thread and that wire connecting portion, on the chip bonding pads relative direction is fixed in wafer, a connecting wafer and wire connecting portion on the chip bonding pads is positioned at described chip bonding pads, wire connecting portion surface; This described chip bonding pads, wire connecting portion are to be made of metal substrate, are formed with silver layer in the surface and the bottom surface of metal substrate, and its bottom surface is directly used in contact.
Chip bonding pads surface on the described coil holder is formed with blind hole, and system is fixing therebetween with wafer with elargol in the blind hole.
It is as follows to adopt said method of the present invention to make the advantage of chip-type LED:
One. increase substantially product qualified rate: the present invention utilizes laminar metal substrate as base material, and directly forms chip bonding pads and the wire connecting portion of while with the contact function thereon, for the usefulness of adorning brilliant routing; Because metal substrate can utilize thermal conduction characteristic to heat on board in operation, to promote gold thread fusibility and the ability of being electrically connected, under this situation, can fully satisfy the requirement of 10g tensile strength, gold thread can not pulled apart because of adhesive layer expands with heat and contract with cold yet, so can obtain high product qualified rate, and then can reduce cost significantly.
Two. volume dwindles significantly: because the present invention directly forms chip bonding pads and wire connecting portion on metal substrate, and make it with the contact function, so need not as printed circuit board (PCB), to form the copper wire contact respectively respectively at surface, bottom surface, so that element has suitable thickness, therefore, utilize the volume of the light-emitting diode that the present invention makes to reduce significantly, help the miniaturization of electronic product.
Three. manufacture craft is simple: conventional wafer formula light-emitting diode of the present invention utilizes printed circuit board (PCB) to compare as the manufacture method of base material, significantly simplifies on manufacture craft, and can raise the efficiency and product qualified rate.
Four. radiating effect ideal: utilize its chip bonding pads of light-emitting diode that the present invention makes and wire connecting portion simultaneously as contact usefulness, when producing heat, can directly distribute, so have desirable radiating effect via chip bonding pads and wire connecting portion when the wafer energising.
Five. cost is low: traditional manufacture craft is to plate nickel oxide and gold layer in regular turn in the copper wire surface of printed circuit board (PCB), and wherein gold is a noble metal, and its manufacturing cost is higher naturally.And the present invention is silver-plated in metallic substrate surfaces, and its cost is far below the gold layer, so cost significantly reduces.
For further understanding purpose of the present invention, characteristics and advantage, the present invention is described in detail below in conjunction with accompanying drawing.
Fig. 1 is the outside drawing before the metal substrate etching of the present invention;
Fig. 2 is the outside drawing after metal substrate of the present invention forms circuit;
Fig. 3 is the partial plan layout of metal substrate of the present invention;
Fig. 4 is the cutaway view of metal substrate of the present invention;
Fig. 5 is the outside drawing after metal substrate of the present invention is adorned brilliant routing;
Fig. 6 is the outside drawing after the metal substrate sealing of the present invention;
Fig. 7 is the cutaway view after the metal substrate sealing of the present invention;
Fig. 8 is the cutaway view after metal substrate of the present invention is cut apart;
Fig. 9 is the equivalent circuit diagram of light-emitting diode (LED) module assembly of the present invention.
Figure 10 is the outside drawing that adopts the printed circuit board (PCB) that the manufacturing process of prior art makes;
Figure 11 is the local appearance figure that adopts the printed circuit board (PCB) that the manufacturing process of prior art makes;
Figure 12 is the cutaway view that adopts the printed circuit board (PCB) that the manufacturing process of prior art makes.
The method that the present invention makes chip-type LED may further comprise the steps:
" substrate manufacture ": select a laminar metal substrate 10 as base material, as shown in Figure 1, for improving the electrical connection effect on metal substrate 10 surfaces, plate the metal level of perfact conductor in the above, in present embodiment, be in these metal substrate 10 surfaces and the bottom surface plates the silver layer of suitable thickness respectively, to improve its electrical connectivity;
" formation circuit ": on described metal substrate 10, carry out steps such as image transfer, circuit etching, and on this metal substrate 10, be formed with several parallel coil holders 11, shown in Fig. 2 and 3,11 of adjacent coil holders are permeable type, several chip bonding pads 12 and wire connecting portion 13 on each coil holder 11 relative side, have been extended to form respectively, in present embodiment, several chip bonding pads 12 that form on each coil holder 11 side and wire connecting portion 13 are to be equidistant arrangement, and each chip bonding pads 12 corresponding wire connecting portion 13;
Be formed with a blind hole 120 respectively on described each chip bonding pads 12, shown in Figure 4, be used for ccontaining wafer; Also be formed with a small pore 130 on this wire connecting portion 13, be used to strengthen routing and be electrically connected ability.
" adorn brilliant routing ": wafer 14 is installed shown in the 5th figure on each chip bonding pads 12 of described coil holder 11, particularly, is lain in the blind hole 120 on the chip bonding pads 12 and fix this wafer 14 by elargol; After waiting to finish the dress crystalline substance, carry out routing immediately, make wafer 14 and relative wire connecting portion 13 connections by gold thread 15;
Because metal substrate 10 is to be made of sheet metal, itself have desirable heat conduction and magnetic characteristic, therefore during operation, can the board of bearing metal substrate 10 be heated, under heated condition, carry out routing, can provide gold thread 15 fusibility and with the intensity that is electrically connected of wafer 14, wire connecting portion 13.In addition,, can produce the magnetic effect on board, be beneficial to operation on the board and metal substrate 10 flatly is fixed in to the metal substrate on it 10 as electromagnet is set.
" sealing ": on described metal substrate 10, carry out sealing, in present embodiment, be to utilize mould, shown in Fig. 6 and 7, so that with sealings such as the chip bonding pads 12 on the adjacent coil holder 11, wire connecting portion 13 and wafer 14 therebetween, gold threads 15 in 11 adhesive layers 16 that form strip of adjacent coil holder;
" cut apart ": described metal substrate 10 is cut apart, to constitute the modular assembly formula light-emitting diode of single light-emitting diode independently or several series connection; Its partitioning scheme is respectively to be parallel to coil holder 11 directions and to cut apart perpendicular to the direction of coil holder 11, because the chip bonding pads 12 of each light-emitting diode is connected with the wire connecting portion 13 of adjacent another light-emitting diode by coil holder 11, so promptly possessed the series connection form with regard to each horizontal light-emitting diode, its visual actual needs is cut apart the light-emitting diode (LED) module assembly of obtaining required number; As shown in Figure 8, have the structure of the modular assembly of two light-emitting diodes shown in the figure, its equivalent electric circuit as shown in Figure 9.Because the present invention utilizes metal substrate 10 as base material, its via line forms step and constitutes chip bonding pads 12 and wire connecting portion 13 respectively, after step such as adorn brilliant routing, sealing and cut apart, this chip bonding pads 12 and wire connecting portion 13 bottoms are that nature constitutes an electric connection point, for the usefulness that is soldered on the circuit board.
A kind of chip-type LED of the present invention, it comprises that a chip bonding pads 12, is positioned at wire connecting portion 13, on chip bonding pads 12 relative directions and is fixed in the adhesive layer 94 that wafer 14 on the chip bonding pads 12, a connecting wafer 14 and the gold thread 15 and of wire connecting portion 13 are positioned at described chip bonding pads 12, wire connecting portion 13 surfaces; This described chip bonding pads 12, wire connecting portion 13 are to be made of metal substrate 10, and its bottom surface is directly used in contact 92.These metal substrate 10 surfaces, bottom surface are formed with silver layer respectively.These chip bonding pads 12 surfaces are formed with blind hole 120, by elargol wafer 93 are fixed therebetween in the blind hole 120.Be formed with small pore on this wire connecting portion 13.Be formed with several parallel coil holders 11 on a laminar metal base, 11 of adjacent coil holders are permeable type, and chip bonding pads 12 and wire connecting portion 13 are along extending to form respectively on the relative side of each coil holder 11.
Claims (13)
1. the manufacture method of a chip-type LED is characterized in that, it comprises the following steps:
Utilize a metal substrate as base material, and to the surface and the bottom surface silver coating of this metal substrate;
On described metal substrate, carry out image transfer, circuit etching and on metal substrate, form several parallel coil holders, on each coil holder relative side, extend to form chip bonding pads and wire connecting portion respectively;
On the chip bonding pads of described coil holder, wafer is installed, and is carried out routing, make wafer and relative wire connecting portion connection;
On described metal substrate, carry out sealing; And
Cut apart described metal substrate to constitute chip-type LED.
2. the manufacture method of chip-type LED according to claim 1 is characterized in that, this metal substrate plates silver layer respectively in the table bottom surface, to improve its electrical connectivity.
3. as the manufacture method of chip-type LED as described in the claim 2, it is characterized in that the chip bonding pads surface on the described coil holder is formed with blind hole, wafer is fixing therebetween in the blind hole with elargol.
4. as the manufacture method of chip-type LED as described in the claim 3, it is characterized in that, be formed with small pore on the wire connecting portion of described coil holder.
5. the manufacture method of chip-type LED according to claim 1 is characterized in that, described routing step is that metal substrate is carried out under the heated state by gold thread wafer and relative wire connecting portion being connected.
6. chip-type LED, it is characterized in that it comprises that a chip bonding pads, is positioned at the adhesive layer that gold thread and that wire connecting portion, on the chip bonding pads relative direction is fixed in wafer, a connecting wafer and wire connecting portion on the chip bonding pads is positioned at described chip bonding pads, wire connecting portion surface; This described chip bonding pads, wire connecting portion are to be made of metal substrate, are formed with silver layer in the surface and the bottom surface of metal substrate, and its bottom surface is directly used in contact.
7. chip-type LED as claimed in claim 6 is characterized in that this metallic substrate surfaces, bottom surface are formed with silver layer respectively.
8. chip-type LED as claimed in claim 7 is characterized in that, this chip bonding pads surface is formed with blind hole, and is by elargol that wafer is fixing therebetween in the blind hole.
9. chip-type LED as claimed in claim 8 is characterized in that, is formed with small pore on this wire connecting portion.
10. metal substrate that is used to make light-emitting diode, it is characterized in that, it is formed with several parallel coil holders on a laminar metal base, be permeable type between adjacent coil holder, extend to form chip bonding pads and wire connecting portion on the relative side of each coil holder respectively, be formed with silver layer on the surface of described metal substrate and the bottom surface respectively.
11. the metal substrate that is used to make light-emitting diode as claimed in claim 10 is characterized in that this metallic substrate surface, bottom surface plate silver layer respectively.
12. the metal substrate that is used to make light-emitting diode as claimed in claim 11 is characterized in that, the chip bonding pads surface of this coil holder is formed with blind hole, and is by elargol that wafer is fixing therebetween in the blind hole.
13. as being used to make the metal substrate of light-emitting diode as described in the claim 12, it is characterized in that, be formed with small pore on the wire connecting portion of this coil holder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001377817A CN1145225C (en) | 2000-12-29 | 2000-12-29 | Chip-type LED and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001377817A CN1145225C (en) | 2000-12-29 | 2000-12-29 | Chip-type LED and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1361555A CN1361555A (en) | 2002-07-31 |
| CN1145225C true CN1145225C (en) | 2004-04-07 |
Family
ID=4597817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB001377817A Expired - Fee Related CN1145225C (en) | 2000-12-29 | 2000-12-29 | Chip-type LED and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1145225C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100361321C (en) * | 2003-10-15 | 2008-01-09 | 陈聪欣 | Method for controlling crawling glue phenomenon in preparation process of light emitting diode sealing glue |
| CN2703295Y (en) * | 2004-04-19 | 2005-06-01 | 佛山市国星光电科技有限公司 | LED light source module for mark plate |
| KR20120032305A (en) * | 2010-09-28 | 2012-04-05 | 삼성엘이디 주식회사 | Semiconductor light emitting diode chip, method of fabricating the chip and method for quality control of the chip |
| CN102147064B (en) * | 2011-01-05 | 2014-03-26 | 深圳市众明半导体照明有限公司 | LED (Light Emitting Diode) module and lighting device |
-
2000
- 2000-12-29 CN CNB001377817A patent/CN1145225C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1361555A (en) | 2002-07-31 |
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| SE01 | Entry into force of request for substantive examination | ||
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| C14 | Grant of patent or utility model | ||
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Granted publication date: 20040407 Termination date: 20161229 |