CN114518694A - Non-developing type photoetching method - Google Patents
Non-developing type photoetching method Download PDFInfo
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- CN114518694A CN114518694A CN202011309897.8A CN202011309897A CN114518694A CN 114518694 A CN114518694 A CN 114518694A CN 202011309897 A CN202011309897 A CN 202011309897A CN 114518694 A CN114518694 A CN 114518694A
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- 238000001259 photo etching Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000012545 processing Methods 0.000 claims abstract description 5
- 238000003384 imaging method Methods 0.000 claims abstract description 4
- 238000000206 photolithography Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 2
- 238000001459 lithography Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention relates to a non-developing photoetching method, which comprises the following steps: step 1: the photoetching light and the guiding light are collimated by a first collimating lens and a second collimating lens respectively; step 2: the beams are combined by the dichroic mirror and are emitted into the incident end face of the dodging module through the focusing lens; and step 3: the light rays passing through the light homogenizing module pass through a third collimating lens again; and 4, step 4: the collimated light is reflected to the first light splitting sheet through the reflector, and a part of the collimated light is reflected to the light mask plate through the first light splitting sheet; and 5: the reflected light carries information on the photomask plate and is subjected to beam combination processing through the second light splitting sheet and the illuminating light; and 6: after the light is combined, the light with information passes through the third light splitting sheet, the light beam hits the photoresist on the substrate, and the information on the light-emitting mask plate is irradiated; and 7: and carrying out real-time imaging observation on the sample by the camera. The invention can observe the product in real time, simplify the photoetching process flow and improve the precision.
Description
Technical Field
The invention belongs to the field of photoetching and micro-nano processing, and particularly relates to a non-developing photoetching method.
Background
The development of integrated circuits is not independent of the development of the lithography technology, and the emergence of the novel lithography technology is favorable for promoting the integrated circuits to further improve the integration level, further reduce the size of devices and prolong the moore's law. The traditional photoetching process flow needs a series of complicated flows such as gluing, prebaking, exposure, postbaking, developing, film hardening, film coating or etching, photoresist removal and the like. Based on the projection lithography technology, a specific light source is integrated, passes through a series of optical elements and finally irradiates on the photoresist. The photoresist in the illumination area is irradiated and volatilized, the substrate and the sample on the substrate are not damaged, the generation of a photoetching pattern is realized, and the traditional photoetching process flow is changed. The steps of postbaking, developing, hardening and the like are eliminated. The photoetching process flow is simplified, and the photoetching precision problem caused by development is avoided.
Disclosure of Invention
To solve the above technical problems, it is an object of the present invention to provide a non-developing photolithography method.
In order to achieve the purpose, the invention adopts the following technical scheme:
a non-developable photolithography method comprising the steps of:
step 1: the photoetching light and the guiding light are collimated by a first collimating lens and a second collimating lens respectively;
step 2: the two beams of light in the step 1 are combined through a dichroic mirror and then are emitted into the incident end face of the dodging module through a focusing lens;
and step 3: the light passing through the light homogenizing module passes through the third collimating lens again to become uniform collimated light;
and 4, step 4: the collimated light in the step 3 is reflected to a first light splitting sheet through a reflector, and a part of light split is reflected to a light mask plate through the first light splitting sheet;
and 5: the reflected light carries information on the photomask plate and is subjected to beam combination processing through the second light splitting sheet and the illuminating light;
step 6: after the light with information is combined, the light beam passes through the third light splitting sheet, the light beam hits the photoresist on the substrate, and the information on the light-emitting mask plate is irradiated, so that the transfer of the pattern is realized;
and 7: finally, the light reflected to the camera can carry out real-time imaging observation on the sample.
Preferably, in the non-developing photolithography method, the optical mask is a spatial light modulator, or a physical mask.
Preferably, in the non-developing lithography method, the information in the step 5 is a lithography pattern.
By means of the scheme, the invention at least has the following advantages:
the photoetching light irradiates the mask plate and then reflects, and then irradiates the photoresist, the photoresist in the illumination area is blown away or volatilized, and the substrate or a sample on the substrate is not damaged, so that the generation of a photoetching pattern is realized, and the processes of post-baking, developing and film hardening in the traditional photoetching process flow are omitted. The traditional photoetching process is changed, the flow of the photoetching process is simplified, the photoetching error caused by development is avoided, and the photoetching precision is ensured.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic workflow diagram of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Examples
As shown in fig. 1, a non-developing photolithography method includes the steps of:
step 1: the photoetching light 1 and the guiding light 2 are collimated by a first collimating lens 3 and a second collimating lens 4 respectively;
step 2: the two beams of light in the step 1 are combined through a dichroic mirror 5 and then are emitted into the incident end face of the dodging module through a focusing lens 6;
and step 3: the light passing through the dodging module 7 passes through the third collimating lens 8 again to become uniform collimated light;
and 4, step 4: the collimated light in the step 3 is reflected to the first light splitting sheet 11 through the reflector 9, and a part of the collimated light is reflected to the light mask plate 10 through the first light splitting sheet 11;
and 5: the reflected light carries information on the photomask plate 10 and is subjected to beam combination processing through the second beam splitter 12 and the illuminating light 13;
and 6: after the light with information is combined, the light beam passes through the third light splitting sheet 14, the light beam hits the photoresist on the substrate, and the information on the light-emitting mask plate is irradiated, so that the transfer of the pattern is realized;
and 7: the light finally reflected into the camera 15 allows real-time imaging observation of the sample.
The optical mask plate is a spatial light modulator or a solid mask plate.
The information in step 5 of the present invention is a pattern of lithography.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, it should be noted that, for those skilled in the art, many modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (3)
1. A non-developing photolithography method, comprising: the method comprises the following steps:
step 1: the photoetching light and the guiding light are collimated by a first collimating lens and a second collimating lens respectively;
step 2: the two beams of light in the step 1 are combined through a dichroic mirror and then are emitted into the incident end face of the dodging module through a focusing lens;
and 3, step 3: the light passing through the light homogenizing module passes through the third collimating lens again to become uniform collimated light;
and 4, step 4: the collimated light in the step 3 is reflected to a first light splitting sheet through a reflector, and a part of light split is reflected to a light mask plate through the first light splitting sheet;
and 5: the reflected light carries information on the photomask plate and is subjected to beam combination processing through the second light splitting sheet and the illuminating light;
step 6: after the light with information is combined, the light beam passes through the third light splitting sheet, the light beam hits the photoresist on the substrate, and the information on the light-emitting mask plate is irradiated, so that the transfer of the pattern is realized;
and 7: finally, the light reflected to the camera can carry out real-time imaging observation on the sample.
2. A non-developable photolithography method according to claim 1, wherein: the optical mask plate is a spatial light modulator or a solid mask plate.
3. A non-developable photolithography method according to claim 1, wherein: the information in the step 5 is a photoetching pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011309897.8A CN114518694A (en) | 2020-11-20 | 2020-11-20 | Non-developing type photoetching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011309897.8A CN114518694A (en) | 2020-11-20 | 2020-11-20 | Non-developing type photoetching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114518694A true CN114518694A (en) | 2022-05-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011309897.8A Pending CN114518694A (en) | 2020-11-20 | 2020-11-20 | Non-developing type photoetching method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5208818A (en) * | 1991-12-12 | 1993-05-04 | Creo Products Inc. | Laser system for recording data patterns on a planar substrate |
| CN110488572A (en) * | 2018-05-15 | 2019-11-22 | 联士光电（深圳）有限公司 | A kind of visualization exposure machine based on DMD technology |
| CN110579945A (en) * | 2018-06-07 | 2019-12-17 | 联士光电（深圳）有限公司 | Visual exposure machine based on LCOS technique |
| US20200142108A1 (en) * | 2018-11-02 | 2020-05-07 | Boe Technology Group Co., Ltd. | Grating structure, manufacturing method thereof and display device |
| CN111552152A (en) * | 2020-06-09 | 2020-08-18 | 赫智科技(苏州)有限公司 | Projection type far-end mask plate photoetching method and equipment thereof |
-
2020
- 2020-11-20 CN CN202011309897.8A patent/CN114518694A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5208818A (en) * | 1991-12-12 | 1993-05-04 | Creo Products Inc. | Laser system for recording data patterns on a planar substrate |
| CN110488572A (en) * | 2018-05-15 | 2019-11-22 | 联士光电（深圳）有限公司 | A kind of visualization exposure machine based on DMD technology |
| CN110579945A (en) * | 2018-06-07 | 2019-12-17 | 联士光电（深圳）有限公司 | Visual exposure machine based on LCOS technique |
| US20200142108A1 (en) * | 2018-11-02 | 2020-05-07 | Boe Technology Group Co., Ltd. | Grating structure, manufacturing method thereof and display device |
| CN111552152A (en) * | 2020-06-09 | 2020-08-18 | 赫智科技(苏州)有限公司 | Projection type far-end mask plate photoetching method and equipment thereof |
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