CN111552152A - Projection type far-end mask plate photoetching method and equipment thereof - Google Patents
Projection type far-end mask plate photoetching method and equipment thereof Download PDFInfo
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- CN111552152A CN111552152A CN202010518861.4A CN202010518861A CN111552152A CN 111552152 A CN111552152 A CN 111552152A CN 202010518861 A CN202010518861 A CN 202010518861A CN 111552152 A CN111552152 A CN 111552152A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention relates to a projection type far-end mask plate photoetching method and equipment thereof, comprising the following steps: step 1: firstly, ultraviolet light and guiding light are collimated by a first collimating lens group and a second collimating lens group respectively; step 2: the light in the step 1 enters a dichroic mirror for beam combination, and is emitted into the incident end face of the dodging module through a focusing lens group; and step 3: through a third collimating lens group; and 4, step 4: the collimated light in the step 3 is reflected to the first light splitter through the reflector and is reflected to the far-end mask plate; and 5: combining the light reflected in the step 4 with the information on the far-end mask plate, the second light splitter and the illuminating light; step 6: in the step 5, the combined light with information passes through a third light splitting sheet, the light beam is irradiated onto the sample, and the information on the far-end mask plate is irradiated out, so that the information transfer is realized; and 7: and finally, carrying out real-time imaging observation on the sample through a camera. The invention does not pollute the mask plate and has lower cost.
Description
Technical Field
The invention belongs to the technical field of photoetching machines, and particularly relates to a projection type far-end mask plate photoetching method and equipment.
Background
The lithography machine technology is an indispensable technology in the fields of micro-nano processing and modern integrated circuits, and common lithography machine technologies comprise a contact type, a proximity type and a projection type. The contact type mask plate needs to be in close contact with the photoresist, the mask plate can be polluted to a certain degree, and the edge of the device is blurred more and more along with the increase of the use times. The proximity type is that nitrogen is introduced between the mask plate and the photoresist to generate a gap of several micrometers to dozens of micrometers, so that the contact between the photoresist and the mask plate is effectively avoided, the service life of the mask plate is prolonged, but the existence of the gap also puts forward requirements on the process level. The projection type mask plate can avoid the problem that the mask plate is polluted by contact, and meanwhile, because the projection type mask plate is far away from the photoresist, a gap is not needed, and the replacement of the mask plate is simpler. Two modes, laser direct writing and DMD projection, are common, but the cost of these two modes is relatively high.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a projection type remote mask lithography method and apparatus.
In order to achieve the purpose, the invention adopts the following technical scheme:
a projection type far-end mask plate photoetching method comprises the following steps:
step 1: firstly, ultraviolet light and guiding light are collimated by a first collimating lens group and a second collimating lens group respectively;
step 2: after the ultraviolet light and the guiding light in the step 1 are collimated, the ultraviolet light and the guiding light enter a dichroic mirror to be combined, and then the ultraviolet light and the guiding light are emitted into an incident end face of the dodging module through a focusing lens group;
and step 3: the light passing through the dodging module passes through the third collimating lens group again to be changed into uniform collimated light;
and 4, step 4: the collimated light in the step 3 is reflected to the first light splitter through the reflector, and a part of light is reflected to the far-end mask plate through the first light splitter;
and 5: combining the light reflected in the step 4 with the information on the far-end mask plate, the second light splitter and the illuminating light;
step 6: in the step 5, the combined light with information passes through a third light splitting sheet, the light beam is irradiated onto the sample, and the information on the far-end mask plate is irradiated out, so that the information transfer is realized;
and 7: and finally, carrying out real-time imaging observation on the sample through a camera.
Preferably, in the projection type remote mask lithography method, the information in the step 5 refers to a pattern and/or a character on the remote mask.
Preferably, in the projective far-end mask lithography method, the information on the sample in the step 6 is consistent with the information in the step 5.
Preferably, in the projective far-end mask lithography method, the illumination light uses LEDs with a color temperature of 3000K.
A projection type far-end mask plate photoetching device comprises a first collimating lens group and a second collimating lens group, wherein the first collimating lens group and the second collimating lens group are respectively arranged at the front end and the rear end of a dichroic mirror, a focusing lens group is arranged at the front end of the dichroic mirror, a dodging module is arranged at the front end of the focusing lens group, a third collimating lens group is arranged at the front end of the dodging module, a reflector is arranged at the front end of the third collimating lens group, a first light splitter is arranged at the front end of the reflector, a far-end mask plate is arranged at the rear end of the first light splitter, a second light splitter is arranged at the front end of the first light splitter, a third light splitter is arranged at the front end of the second light splitter, and the third light splitter is output to a sample.
Preferably, in the projection-type distal end mask plate lithography apparatus, the first collimating lens group is externally connected with ultraviolet light.
Preferably, in the projection-type distal end mask plate lithography apparatus, the second collimating lens group is externally connected with a guiding light.
Preferably, in the projection-type remote mask lithography apparatus, the third light splitter is externally connected with a camera.
Preferably, in the projection-type remote mask lithography apparatus, the second beam splitter is externally connected with illumination light.
By the scheme, the invention at least has the following advantages:
1. compared with a contact mask plate, the far-end mask plate installation mode does not pollute the mask plate.
2. Compared with the mode of laser direct writing and DMD projection, the invention has lower cost.
3. The far-end mask plate can be made into a standard and universal type, and is simple to mount and dismount.
4. The replacement of the lithographic pattern may be achieved by replacing a different remote reticle.
5. On the same far-end mask plate, the photoetching patterns in different areas are selected to carry out exposure operation by moving the far-end mask plate.
6. The camera can observe the optical graph in real time, and accurate alignment and what you see is what you get are achieved.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic diagram of the optical path of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It will be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, as used herein, refer to an orientation or positional relationship indicated in the drawings that is solely for the purpose of facilitating the description and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and is therefore not to be construed as limiting the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Examples
As shown in fig. 1, a projection type far-end mask plate lithography apparatus includes a first collimating lens group 1 and a second collimating lens group 2, wherein the first collimating lens group 1 is externally connected with ultraviolet light a, the second collimating lens group 2 is externally connected with guiding light B, the first collimating lens group 1 and the second collimating lens group 2 are respectively disposed at the front end and the rear end of a dichroic mirror 3, the front end of the dichroic mirror 3 is provided with a focusing lens group 4, the front end of the focusing lens group 4 is provided with a dodging module 5, the front end of the dodging module 5 is provided with a third collimating lens group 6, the front end of the third collimating lens group 6 is provided with a reflector 7, the front end of the reflector 7 is provided with a first light splitter 8, the rear end of the first light splitter 8 is provided with a far-end mask plate 9, the front end of the first light splitter 8 is provided with a second light splitter 10, the second light splitter 10 is externally connected with illumination light C, a third light splitter 11 is arranged at the front end of the second light splitter 10, the output of the third light splitter 11 is transmitted to a sample 12, and a camera 13 is externally connected with the third light splitter 11.
The presence of the index light in the present invention allows the pattern to be observed prior to lithography because the uv light is only turned on during lithography, and therefore it is desirable to see what the pattern is on the sample, which is very necessary in the case of overlay, by first using a photoresist insensitive index light.
The LED with the color temperature of 3000K is used as the illumination light, and the common photoresist is not sensitive to the wavelength, so the LED can be used for camera illumination, and the replacement of an illumination light source can be carried out according to the requirement and the selection is carried out according to the sensitive waveband of the photoresist.
On the basis of the above-described embodiments,
a projection type far-end mask plate photoetching method comprises the following steps:
step 1: firstly, ultraviolet light and guiding light are collimated by a first collimating lens group and a second collimating lens group respectively;
step 2: after the ultraviolet light and the guiding light in the step 1 are collimated, the ultraviolet light and the guiding light enter a dichroic mirror to be combined, and then the ultraviolet light and the guiding light are emitted into an incident end face of the dodging module through a focusing lens group;
and step 3: the light passing through the dodging module passes through the third collimating lens group again to be changed into uniform collimated light;
and 4, step 4: the collimated light in the step 3 is reflected to the first light splitter through the reflector, and a part of light is reflected to the far-end mask plate through the first light splitter;
and 5: combining the light reflected in the step 4 with the information on the far-end mask plate, the second light splitter and the illuminating light;
step 6: in the step 5, the combined light with information passes through a third light splitting sheet, the light beam is irradiated onto the sample, and the information on the far-end mask plate is irradiated out, so that the information transfer is realized;
and 7: and finally, carrying out real-time imaging observation on the sample through a camera.
Wherein, the information of the step 5 refers to the graphics and/or characters on the far-end mask plate, and meanwhile, the information on the sample in the step 6 is consistent with the information in the step 5.
The mask has a gray scale of 1-65536 steps and gray scale exposure can be achieved (steps may be any number in this interval).
The invention has at least the following advantages:
1. compared with a contact mask plate, the far-end mask plate installation mode does not pollute the mask plate.
2. Compared with the mode of laser direct writing and DMD projection, the invention has lower cost.
3. The far-end mask plate can be made into a standard and universal type, and is simple to mount and dismount.
4. The replacement of the lithographic pattern may be achieved by replacing a different remote reticle.
5. On the same far-end mask plate, the photoetching patterns in different areas are selected to carry out exposure operation by moving the far-end mask plate.
5. The camera can observe the optical graph in real time, and accurate alignment and what you see is what you get are achieved.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, it should be noted that, for those skilled in the art, many modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (9)
1. A projection type far-end mask plate photoetching method is characterized by comprising the following steps:
step 1: firstly, ultraviolet light and guiding light are collimated by a first collimating lens group and a second collimating lens group respectively;
step 2: after the ultraviolet light and the guiding light in the step 1 are collimated, the ultraviolet light and the guiding light enter a dichroic mirror to be combined, and then the ultraviolet light and the guiding light are emitted into an incident end face of the dodging module through a focusing lens group;
and step 3: the light passing through the dodging module passes through the third collimating lens group again to be changed into uniform collimated light;
and 4, step 4: the collimated light in the step 3 is reflected to the first light splitter through the reflector, and a part of light is reflected to the far-end mask plate through the first light splitter;
and 5: combining the light reflected in the step 4 with the information on the far-end mask plate, the second light splitter and the illuminating light;
step 6: in the step 5, the combined light with information passes through a third light splitting sheet, the light beam is irradiated onto the sample, and the information on the far-end mask plate is irradiated out, so that the information transfer is realized;
and 7: and finally, carrying out real-time imaging observation on the sample through a camera.
2. The projective remote reticle lithography method of claim 1, wherein: the information of the step 5 refers to graphics and/or characters on the far-end mask plate.
3. The projective remote reticle lithography method of claim 1, wherein: the information on the sample in step 6 is consistent with the information in step 5.
4. The projective remote reticle lithography method of claim 1, wherein: the illumination light uses an LED with 3000K color temperature.
5. A projection-type remote mask plate photoetching equipment is characterized in that: the lens comprises a first collimating lens group (1) and a second collimating lens group (2), wherein the first collimating lens group (1) and the second collimating lens group (2) are respectively arranged at the front end and the rear end of a dichroic mirror (3), the front end of the dichroic mirror (3) is provided with a focusing lens group (4), the front end of the focusing lens group (4) is provided with a light homogenizing module (5), the front end of the light homogenizing module (5) is provided with a third collimating lens group (6), the front end of the third collimating lens group (6) is provided with a reflector (7), the front end of the reflector (7) is provided with a first light splitter (8), the rear end of the first light splitter (8) is provided with a far-end mask plate (9), the front end of the first light splitter (8) is provided with a second light splitter (10), and the front end of the second light splitter (10) is provided with a third light splitter (11), the output of the third light splitter (11) is sent to a sample (12).
6. The projective, remote reticle lithographic apparatus of claim 5, wherein: the first collimating lens group (1) is externally connected with ultraviolet light.
7. The projective, remote reticle lithographic apparatus of claim 5, wherein: and the second collimating lens group (2) is externally connected with guide light.
8. The projective, remote reticle lithographic apparatus of claim 5, wherein: the third light splitter (11) is externally connected with a camera (13).
9. The projective, remote reticle lithographic apparatus of claim 5, wherein: the second light splitting sheet (10) is externally connected with illuminating light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010518861.4A CN111552152A (en) | 2020-06-09 | 2020-06-09 | Projection type far-end mask plate photoetching method and equipment thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010518861.4A CN111552152A (en) | 2020-06-09 | 2020-06-09 | Projection type far-end mask plate photoetching method and equipment thereof |
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| CN111552152A true CN111552152A (en) | 2020-08-18 |
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| CN202010518861.4A Pending CN111552152A (en) | 2020-06-09 | 2020-06-09 | Projection type far-end mask plate photoetching method and equipment thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114515908A (en) * | 2020-11-20 | 2022-05-20 | 赫智科技(苏州)有限公司 | Material reducing processing method based on short pulse laser |
| CN114518694A (en) * | 2020-11-20 | 2022-05-20 | 赫智科技(苏州)有限公司 | Non-developing type photoetching method |
| CN114517291A (en) * | 2020-11-20 | 2022-05-20 | 赫智科技(苏州)有限公司 | Spatially-resolved photoinduction additive manufacturing method |
| CN115390363A (en) * | 2021-05-25 | 2022-11-25 | 赫智科技(苏州)有限公司 | Ultrahigh-order gray scale photoetching method and equipment |
| CN115390359A (en) * | 2021-05-25 | 2022-11-25 | 赫智科技(苏州)有限公司 | In-situ three-dimensional photoetching method and equipment |
| CN115390362A (en) * | 2021-05-25 | 2022-11-25 | 赫智科技(苏州)有限公司 | 4K photoetching method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110174824A (en) * | 2019-05-30 | 2019-08-27 | 电子科技大学 | A kind of alignment alignment optical path and its method based on projection mask-free photolithography equipment |
| CN110488572A (en) * | 2018-05-15 | 2019-11-22 | 联士光电（深圳）有限公司 | A kind of visualization exposure machine based on DMD technology |
| CN110579945A (en) * | 2018-06-07 | 2019-12-17 | 联士光电（深圳）有限公司 | Visual exposure machine based on LCOS technique |
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2020
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110488572A (en) * | 2018-05-15 | 2019-11-22 | 联士光电（深圳）有限公司 | A kind of visualization exposure machine based on DMD technology |
| CN110579945A (en) * | 2018-06-07 | 2019-12-17 | 联士光电（深圳）有限公司 | Visual exposure machine based on LCOS technique |
| CN110174824A (en) * | 2019-05-30 | 2019-08-27 | 电子科技大学 | A kind of alignment alignment optical path and its method based on projection mask-free photolithography equipment |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114515908A (en) * | 2020-11-20 | 2022-05-20 | 赫智科技(苏州)有限公司 | Material reducing processing method based on short pulse laser |
| CN114518694A (en) * | 2020-11-20 | 2022-05-20 | 赫智科技(苏州)有限公司 | Non-developing type photoetching method |
| CN114517291A (en) * | 2020-11-20 | 2022-05-20 | 赫智科技(苏州)有限公司 | Spatially-resolved photoinduction additive manufacturing method |
| CN115390363A (en) * | 2021-05-25 | 2022-11-25 | 赫智科技(苏州)有限公司 | Ultrahigh-order gray scale photoetching method and equipment |
| CN115390359A (en) * | 2021-05-25 | 2022-11-25 | 赫智科技(苏州)有限公司 | In-situ three-dimensional photoetching method and equipment |
| CN115390362A (en) * | 2021-05-25 | 2022-11-25 | 赫智科技(苏州)有限公司 | 4K photoetching method |
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Application publication date: 20200818 |
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