CN114498285A - Semiconductor laser - Google Patents
Semiconductor laser Download PDFInfo
- Publication number
- CN114498285A CN114498285A CN202210083666.2A CN202210083666A CN114498285A CN 114498285 A CN114498285 A CN 114498285A CN 202210083666 A CN202210083666 A CN 202210083666A CN 114498285 A CN114498285 A CN 114498285A
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- Prior art keywords
- semiconductor laser
- heat dissipation
- dissipation structure
- heat
- tube core
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 105
- 230000017525 heat dissipation Effects 0.000 claims abstract description 87
- 230000007704 transition Effects 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 21
- 230000002401 inhibitory effect Effects 0.000 abstract description 6
- 230000001737 promoting effect Effects 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present disclosure provides a semiconductor laser, comprising: a transitional heat sink; the heat dissipation structure is arranged on the upper surface of the transition heat sink, the cross section of the heat dissipation structure is trapezoidal, and the lower bottom of the trapezoid is in contact with the upper surface of the transition heat sink; the semiconductor laser tube core comprises an active region, the semiconductor laser tube core is arranged on the upper surface of the heat dissipation structure, and the size of the lower surface of the semiconductor laser tube core is the same as that of the lower surface of the heat dissipation structure; the size of the lower surface of the active region is the same as the size of the upper surface of the heat dissipation structure, and the active region is aligned with the upper surface of the heat dissipation structure. The cross section of the heat dissipation structure is trapezoidal, so that the effects of promoting heat dissipation of the central area and inhibiting heat dissipation of two sides of the semiconductor laser during working are achieved, the uniformity of temperature distribution inside a tube core of the semiconductor laser is increased, the influence of a thermal lens effect is inhibited, the quality of light beams is improved, and the photoelectric performance, reliability and service life of the semiconductor laser are improved.
Description
Technical Field
The present disclosure relates to the field of semiconductor laser technology, and more particularly, to a semiconductor laser.
Background
The semiconductor laser has the advantages of high electro-optical efficiency, small volume, long service life, high reliability and the like, and is widely applied to the fields of material processing, communication, medical cosmetology and the like. In order to further expand the applications of semiconductor lasers in various fields, the improvement of the quality of device beams under the condition of high power output is a key point of attention. In a common COS packaging structure, a semiconductor laser can generate a large amount of waste heat during normal work, the temperature distribution in the transverse direction shows a high temperature gradient with high central temperature and low temperatures at two sides, so that the transverse refractive index distribution tends to be uneven, a thermal lens effect occurs, the far-field divergence angle of a slow axis is increased, and the quality of a light beam is reduced. In the related art, a thermal path structure with a rectangular cross section is introduced between a semiconductor laser tube core and a transition heat sink, so that the overall temperature uniformity inside the tube core is improved by inhibiting the heat dissipation effects on two sides of the tube core, the influence of the thermal lens effect is reduced, and higher light beam quality is obtained.
Disclosure of Invention
In view of the above, the present disclosure provides a semiconductor laser.
According to an aspect of the present disclosure, there is provided a semiconductor laser including:
a transitional heat sink;
the heat dissipation structure is arranged on the upper surface of the transition heat sink, the cross section of the heat dissipation structure is trapezoidal, and the lower bottom of the trapezoid is in contact with the upper surface of the transition heat sink;
the semiconductor laser tube core comprises an active region, the semiconductor laser tube core is arranged on the upper surface of the heat dissipation structure, and the size of the lower surface of the semiconductor laser tube core is the same as that of the lower surface of the heat dissipation structure;
the size of the lower surface of the active region is the same as the size of the upper surface of the heat dissipation structure, and the active region is aligned with the upper surface of the heat dissipation structure.
Optionally, the cross section of the heat dissipation structure is an isosceles trapezoid, and a size of an upper base of the isosceles trapezoid is smaller than a size of a lower base of the isosceles trapezoid.
Optionally, the semiconductor laser further comprises:
the upper surface of the metal heat sink is provided with a transition heat sink.
Optionally, the first side surface of the metal heat sink, the second side surface of the transition heat sink, the third side surface of the heat dissipation structure, and the fourth side surface of the semiconductor laser die are all located in the same plane, and the planes are parallel to the cross section;
the third side is perpendicular to the upper surface and the lower surface of the heat dissipation structure.
Optionally, the means for connecting the semiconductor laser die and the heat spreading structure comprises soldering.
Optionally, a lower surface of the heat spreading structure and a lower surface of the semiconductor laser die are aligned in a direction perpendicular to the cross-section.
Optionally, the active region is proximate to an upper surface of the heat dissipating structure.
Optionally, the material of the heat dissipation structure includes any one of gold or copper.
Optionally, the height of the heat dissipation structure is 30-50 um.
Optionally, a dimension of a lower surface of the semiconductor laser die is the same as a dimension of a lower surface of the active region in a direction perpendicular to a cross section of the heat dissipation structure.
The present disclosure provides a semiconductor laser including: a transitional heat sink; the heat dissipation structure is arranged on the upper surface of the transition heat sink, the cross section of the heat dissipation structure is trapezoidal, and the lower bottom of the trapezoid is in contact with the upper surface of the transition heat sink; the semiconductor laser tube core comprises an active region, the semiconductor laser tube core is arranged on the upper surface of the heat dissipation structure, and the size of the lower surface of the semiconductor laser tube core is the same as that of the lower surface of the heat dissipation structure; the size of the lower surface of the active region is the same as the size of the upper surface of the heat dissipation structure, and the active region is aligned with the upper surface of the heat dissipation structure. The heat radiation structure that this disclosure provided can weaken the horizontal temperature distribution gradient of semiconductor laser active area, increases the inside temperature homogeneity of semiconductor laser tube core to reduce the thermal lens effect influence, reduce slow axle far field divergence angle, guarantee higher light beam quality, simultaneously, the heat radiation structure that this disclosure provided compares in traditional heat radiation structure, has better thermal diffusivity, can promote semiconductor laser photoelectric property, reliability and life-span.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 schematically illustrates a structural schematic diagram of a semiconductor laser provided in an embodiment of the present disclosure;
fig. 2 schematically illustrates three views of a semiconductor laser provided by an embodiment of the present disclosure; and
fig. 3 schematically illustrates a structural schematic diagram of another semiconductor laser provided in an embodiment of the present disclosure.
Description of reference numerals:
1, a metal heat sink; 2, transition heat sink; 3, a heat dissipation structure; 4 a semiconductor laser die; 5 an active region; 101 a first side; 201 a second side; 301 a third side; 401 fourth side.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
It should be noted that in the drawings or description, the same drawing reference numerals are used for similar or identical parts. Implementations not depicted or described in the drawings are of a form known to those of ordinary skill in the art. Additionally, while exemplifications of parameters including particular values may be provided herein, it is to be understood that the parameters need not be exactly equal to the respective values, but may be approximated to the respective values within acceptable error margins or design constraints. In addition, directional terms, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outer", and the like, referred to in the following embodiments are only directions referring to the drawings. Accordingly, the directional terminology used is intended to be in the nature of words of description rather than of limitation.
Fig. 1 schematically illustrates a structural schematic diagram of a semiconductor laser provided in an embodiment of the present disclosure, and fig. 2 schematically illustrates three views of a semiconductor laser provided in an embodiment of the present disclosure.
As shown in fig. 1 and 2, in an embodiment of the present disclosure, the semiconductor laser includes: a transitional heat sink 2; the heat dissipation structure 3 is arranged on the upper surface of the transition heat sink 2, the cross section of the heat dissipation structure 3 is trapezoidal, and the lower bottom of the trapezoid is in contact with the upper surface of the transition heat sink 2; the semiconductor laser tube core 4 comprises an active region 5, the semiconductor laser tube core 4 is arranged on the upper surface of the heat dissipation structure 3, and the size of the lower surface of the semiconductor laser tube core 4 is the same as that of the lower surface of the heat dissipation structure 3; the lower surface of the active region 5 has the same dimensions as the upper surface of the heat dissipation structure 3, the active region 5 being aligned with the upper surface of the heat dissipation structure 3.
With reference to fig. 1 and fig. 2, a heat dissipation structure 3 is disposed between the semiconductor laser die 4 and the transition heat sink 2, in this embodiment, the semiconductor laser die 4 may be connected to the heat dissipation structure 3 by welding, or other connection manners may be selected according to actual requirements, and the connection manner between the semiconductor laser die 4 and the heat dissipation structure 3 is not limited in this disclosure. The cross section of heat radiation structure 3 is trapezoidal, the plane at heat radiation structure 3's upper surface is trapezoidal upper base place, heat radiation structure 3's lower surface is the plane at trapezoidal lower base place, and heat radiation structure 3's lower surface and transition heat sink 2 contact, heat radiation structure 3's upper surface and semiconductor laser tube core 4 contact (as shown in fig. 2), in this embodiment, in order to guarantee the radiating effect, heat radiation structure 3's material can select the material that the thermal conductivity is higher, for example gold or copper, also can be the higher non-metallic material of other thermal conductivities, specifically, the material can be selected according to actual need, this disclosure does not do the restriction to heat radiation structure 3's material. In addition, in this embodiment, the height of the heat dissipation structure 3 (i.e., the height of the cross section of the heat dissipation structure 3) is 30 to 50um, if the height of the heat dissipation structure 3 is too low, the temperature gradients of the two sides and the center of the semiconductor laser tube core 4 are large, and the suppression effect on the thermal lens effect is small, and if the height of the heat dissipation structure 3 is too high, the overall heat dissipation effect of the semiconductor laser tube core 4 will be reduced, so that the junction temperature of the semiconductor laser tube core 4 is increased, and the device performance is affected.
Referring to fig. 1 and 2 together, the size of the lower surface of the semiconductor laser die 4 is the same as the size of the lower surface of the heat dissipation structure 3, the semiconductor laser die 4 further includes an active region 5, the size of the lower surface of the active region 5 is the same as the size of the upper surface of the heat dissipation structure 3 and is aligned, in this embodiment, the size of the lower surface of the semiconductor laser die 4 is the same as the size of the lower surface of the active region 5 in the direction perpendicular to the cross section of the heat dissipation structure 3 (as shown in fig. 2), the size of the lower surface of the semiconductor laser die 4 is the same as the size of the lower surface of the heat dissipation structure 3, the size of the lower surface of the active region 5 is the same as the size of the upper surface of the heat dissipation structure 3, that is, in the direction perpendicular to the cross section of the heat dissipation structure 3, the sizes of the heat dissipation structure 3, the semiconductor laser 4 and the active region 5 are the same, that is, only the portion of the lower surface of the semiconductor laser die 4 corresponding to the active region 5 contacts the upper surface of the heat dissipation structure 3 (as shown in fig. 1), and the heat dissipation structure 3 is disposed such that the heat dissipation effect of the central region of the semiconductor laser during operation can be promoted, and the heat dissipation from both sides can be suppressed, so as to increase the uniformity of the internal temperature distribution of the semiconductor laser die 4, and the active region 5 can be close to the upper surface of the heat dissipation structure 3, so as to further promote the heat dissipation effect of the central region of the semiconductor laser during operation, in this embodiment, the lower surface of the heat dissipation structure 3 can be aligned with the lower surface of the semiconductor laser die 4 in the direction perpendicular to the cross section of the heat dissipation structure 3 (as shown in fig. 2), that is, the sizes of the non-contact portions of the semiconductor laser die 4 at both sides of the heat dissipation structure 3 are the same, further suppressing heat dissipation on both sides of the semiconductor laser. Meanwhile, the internal temperature distribution of the semiconductor laser tube core 4 is in positive correlation with the refractive index distribution, so that when the refractive index distribution in the semiconductor laser tube core 4 tends to be uniform, the thermal lens effect can be reduced, the beam quality can be improved, and the aims of inhibiting the influence of the thermal lens effect and improving the beam quality can be fulfilled. In addition, because the upper surface of heat radiation structure 3 and the lower surface part contact of semiconductor laser tube core 4, reduced the area in low heat conduction region to reduced heat radiation structure 3 to the whole radiating influence of semiconductor laser tube core 4, be favorable to guaranteeing semiconductor laser tube core 4's heat dispersion, reduced semiconductor laser tube core 4 bulk temperature, thereby promote semiconductor laser's photoelectric property, and improve semiconductor laser's reliability and life-span.
In an embodiment of the present disclosure, the cross section of the heat dissipation structure 3 is an isosceles trapezoid, and a size of an upper base of the isosceles trapezoid is smaller than a size of a lower base of the isosceles trapezoid.
In this embodiment, set up heat radiation structure 3 to isosceles trapezoid, can make 4 both sides radiating effect of semiconductor laser tube core tend to unanimity, increase 4 inside homogeneity of semiconductor laser tube core, and then reduce the thermal lens effect influence, improve the light beam quality. In addition, because the waste heat generating area is mainly concentrated on the active area 5 corresponding to the current injection area when the semiconductor laser works, the phenomena that the central temperature of the semiconductor laser is high and the temperature of two sides is low are often displayed under the common packaging mode, wherein the central temperature is mainly concentrated on the active area 5 corresponding to the current injection area, therefore, the heat dissipation structure 3 is set to be a structure with an isosceles trapezoid cross section, the size of the upper surface of the heat dissipation structure 3 is the same as that of the lower surface of the active area 5 related to the current injection area, thereby increasing the heat dissipation at the center of the semiconductor laser, reducing the heat dissipation effect of two sides, inhibiting the heat flow from the center to two sides and further inhibiting the thermal lens effect, meanwhile, the size of the lower surface of the heat dissipation structure 3 with the isosceles trapezoid cross section is the same as that of the lower surface of the semiconductor laser tube core 4, and being beneficial to reducing the range of an air gap, increasing the overall heat dissipation effect of the semiconductor laser die 4.
In an embodiment of the present disclosure, the semiconductor laser further includes: the metal heat sink 1, the upper surface of metal heat sink 1 is provided with transition heat sink 2. The first side 101 of the metal heat sink 1, the second side 201 of the submount 2, the third side 301 of the heat dissipation structure 3, and the fourth side 401 of the semiconductor laser die 4 all lie in the same plane, which is parallel to the cross section of the heat dissipation structure 3; the third side 301 is perpendicular to the upper and lower surfaces of the heat dissipation structure 3.
With reference to fig. 1-3, the submount 2 is disposed on the metal heatsink 1, and because the semiconductor laser emits light at the edge, in this embodiment, the metal heatsink 1, the submount 2, the heat dissipation structure 3, and one end of the semiconductor laser die 4 are aligned (as shown in fig. 2), so that the light emitting effect of the semiconductor laser can be ensured.
The present disclosure provides a semiconductor laser, comprising: a transitional heat sink; the heat dissipation structure is arranged on the upper surface of the transition heat sink, the cross section of the heat dissipation structure is trapezoidal, and the lower bottom of the trapezoid is in contact with the upper surface of the transition heat sink; the semiconductor laser tube core comprises an active region, the semiconductor laser tube core is arranged on the upper surface of the heat dissipation structure, and the size of the lower surface of the semiconductor laser tube core is the same as that of the lower surface of the heat dissipation structure; the size of the lower surface of the active region is the same as the size of the upper surface of the heat dissipation structure, and the active region is aligned with the upper surface of the heat dissipation structure. The cross section of the heat dissipation structure is set to be trapezoidal, the effects of promoting heat dissipation of the central area and inhibiting heat dissipation of two sides of the semiconductor laser during working are achieved, the uniformity of temperature distribution inside a tube core of the semiconductor laser is further improved, the influence of a thermal lens effect is inhibited, the quality of light beams is improved, and the photoelectric performance, reliability and service life of the semiconductor laser are improved.
Those skilled in the art will appreciate that various combinations and/or combinations of features recited in the various embodiments and/or claims of the present disclosure can be made, even if such combinations or combinations are not expressly recited in the present disclosure. In particular, various combinations and/or combinations of the features recited in the various embodiments and/or claims of the present disclosure may be made without departing from the spirit or teaching of the present disclosure. All such combinations and/or associations are within the scope of the present disclosure.
The embodiments of the present disclosure are described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. While the disclosure has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure as defined by the appended claims and their equivalents. Accordingly, the scope of the present disclosure should not be limited to the above-described embodiments, but should be defined not only by the appended claims, but also by equivalents thereof.
Claims (10)
1. A semiconductor laser, comprising:
a submount (2);
the heat dissipation structure (3) is arranged on the upper surface of the transition heat sink (2), the cross section of the heat dissipation structure (3) is trapezoidal, and the lower bottom of the trapezoid is in contact with the upper surface of the transition heat sink (2);
the semiconductor laser tube core (4) comprises an active region (5), the semiconductor laser tube core (4) is arranged on the upper surface of the heat dissipation structure (3), and the size of the lower surface of the semiconductor laser tube core (4) is the same as that of the lower surface of the heat dissipation structure (3);
the size of the lower surface of the active area (5) is the same as the size of the upper surface of the heat dissipation structure (3), and the active area (5) is aligned with the upper surface of the heat dissipation structure (3).
2. The semiconductor laser according to claim 1, characterized in that the cross section of the heat-dissipating structure (3) is an isosceles trapezoid, the size of the upper base of which is smaller than the size of the lower base of which.
3. A semiconductor laser as claimed in claim 1 further comprising:
the metal heat sink (1), the upper surface of metal heat sink (1) is provided with the transition heat sink (2).
4. A semiconductor laser as claimed in claim 3 wherein the first side (101) of the metal heat sink (1), the second side (201) of the submount (2), the third side (301) of the heat spreading structure (3) and the fourth side (401) of the semiconductor laser die (4) all lie in the same plane, and the plane is parallel to the cross-section;
the third side surface (301) is perpendicular to the upper surface and the lower surface of the heat dissipation structure (3).
5. A semiconductor laser as claimed in claim 1 wherein the means of connecting the semiconductor laser die (4) and the heat spreading structure (3) comprises soldering.
6. A semiconductor laser according to claim 1, characterized in that the lower surface of the heat spreading structure (3) and the lower surface of the semiconductor laser die (4) are aligned in a direction perpendicular to the cross-section.
7. A semiconductor laser according to claim 1, characterized in that the active region (5) is close to the upper surface of the heat spreading structure (3).
8. A semiconductor laser according to claim 1, characterized in that the material of the heat spreading structure (3) comprises any of gold or copper.
9. A semiconductor laser according to claim 1, characterized in that the height of the heat spreading structure (3) is 30-50 um.
10. A semiconductor laser as claimed in claim 1, characterized in that the dimensions of the lower surface of the semiconductor laser die (4) are the same as the dimensions of the lower surface of the active region (5) in a direction perpendicular to the cross section of the heat spreading structure (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210083666.2A CN114498285B (en) | 2022-01-24 | 2022-01-24 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210083666.2A CN114498285B (en) | 2022-01-24 | 2022-01-24 | Semiconductor laser |
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| Publication Number | Publication Date |
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| CN114498285A true CN114498285A (en) | 2022-05-13 |
| CN114498285B CN114498285B (en) | 2024-02-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210083666.2A Active CN114498285B (en) | 2022-01-24 | 2022-01-24 | Semiconductor laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117954957A (en) * | 2024-03-25 | 2024-04-30 | 度亘核芯光电技术(苏州)有限公司 | Heat abstractor and semiconductor laser |
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| Publication number | Publication date |
|---|---|
| CN114498285B (en) | 2024-02-06 |
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