CN114497989A - Terahertz antenna integrated with high-temperature superconducting high-order in-phase series mixer - Google Patents
Terahertz antenna integrated with high-temperature superconducting high-order in-phase series mixer Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 238000004088 simulation Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
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- 230000008901 benefit Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910003097 YBa2Cu3O7−δ Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
- H01Q1/247—Supports; Mounting means by structural association with other equipment or articles with receiving set with frequency mixer, e.g. for direct satellite reception or Doppler radar
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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Abstract
The invention discloses a terahertz antenna integrated with a high-temperature superconducting high-order in-phase series mixer, which comprises a terahertz antenna; the terahertz antenna comprises butterfly metal layers at two ends; a plurality of low-impedance mixers are embedded between butterfly metal layers at two ends; the plurality of low impedance mixers are connected by a meander line metal layer. The invention designs a multi-source excited terahertz antenna with low input impedance, and a high-order in-phase series low-impedance mixer is embedded in the terahertz antenna to complete impedance matching without influencing the performance of the antenna; the butterfly-shaped loading meander line antenna can be embedded into a plurality of low-impedance mixers in the meander line, so that the performance of the antenna is not influenced while impedance matching is completed; the length of the meander line between the mixers can be adjusted at will to adjust the active impedance and complete the matching with the mixer impedance; the embedded low-impedance mixer can be increased or decreased according to the requirements of practical application, and the impedance matching between the antenna and the mixer is improved, so that the harmonic frequency is increased, and the impedance mismatch is reduced.
Description
Technical Field
The invention relates to a terahertz antenna integrated with a high-temperature superconducting high-order in-phase series mixer, and belongs to the field of terahertz communication and superconduction.
Background
Terahertz (THz) waves are electromagnetic waves of 0.1-10 THz. The terahertz communication has the advantages of high transmission rate, large capacity, strong directivity, high safety, good penetrability and the like due to considerable absolute bandwidth. However, due to the severe atmospheric attenuation of the terahertz waveband, higher requirements are put on the effective detection of the ultra-sensitive terahertz receiver. Semiconductor-based heterodyne receivers have been developed using schottky barrier diodes, high electron mobility transistors, complementary metal oxide semiconductors, and the like. They can operate at room temperature, but require relatively high Local Oscillator (LO) power, which can present challenges as operating frequencies increase. Low Temperature Superconducting (LTS) thermionic bolometers (HEBs) and superconductor-insulator-superconductor (SIS) mixers can operate at lower LO power, the most sensitive frequency down-converters to date. However, LTS equipment requires cooling to liquid helium temperatures (4.2K) or below, which requires expensive liquid helium and cryogenic equipment. High Temperature Superconducting (HTS) mixers can operate at liquid nitrogen temperatures (77K). The high-temperature superconducting mixer has the advantages of low-temperature cost, wide bandwidth, high sensitivity, low local oscillation power requirement, high higher harmonic and the like, and is an ideal choice for the terahertz heterodyne receiver.
Due to the low power consumption and high cost of the THz source, the higher harmonic mixer is very important in reducing the local oscillation cost and improving the mixing performance in the THz communication. The higher the number of harmonics, the lower the LO frequency, and the lower the cost. King Hua soldier et al reported Bi2Sr2CaCu2O8+xThe (BSCCO) intrinsic mixer achieves 98 th harmonic mixing in 100 GHz detection. Considering impedance matching, Dujia, Gaoxiang and the like integrate and research the terahertz waveband YBa2Cu3O7-δThe slot antenna of the (YBCO) step edge mixer adopts coplanar waveguide feed. So far they have measured a maximum harmonic order of 31 forAnd (5) detecting at 600 GHz. Aiming at a 210 GHz atmospheric window, a new terahertz antenna is introduced to improve the coupling efficiency between the mixer and the antenna, and the harmonic mixing of up to 146 times in the YBCO double-crystal mixer is realized. Subsequently, a mixer s-mixer with a serial structure is proposed, which benefits from the synchronous operation of 3 mixers s in series to realize 154 th harmonic mixing. Although 3 YBCO twin mixers connected in series work synchronously, the problem of impedance mismatch between an antenna and each mixer is not solved at present. Therefore, if the impedance matching between the antenna and each mixer can be improved, the harmonic order is expected to be further increased. Therefore, a suitable antenna is used to match the impedance of each YBCO twin mixer in series.
Disclosure of Invention
In view of the problems in the prior art, the present invention provides a terahertz antenna integrated with a high-temperature superconducting high-order in-phase series mixer, so as to solve the above technical problems.
In order to achieve the purpose, the invention adopts the technical scheme that: a terahertz antenna integrated with a high-temperature superconducting high-order in-phase series mixer comprises a terahertz antenna; the terahertz antenna comprises butterfly metal layers at two ends; a plurality of low-impedance mixers are embedded between the butterfly metal layers at the two ends; the plurality of low impedance mixers are connected by a meander line metal layer.
By adopting the technical scheme, the butterfly-shaped loading meander line antenna can be embedded into a plurality of low-impedance mixers in the meander line, so that the performance of the antenna is not influenced while impedance matching is completed.
Further, the low-impedance mixers are arranged in an even number, and the mixers in series are arranged at the intersection point of the center line of the meander line metal layer and the butterfly metal layer and are symmetrically arranged about the central symmetry point of the terahertz antenna.
By adopting the technical scheme, the symmetrical radiation pattern and the consistent resonance frequency points can be ensured by the arrangement of the central symmetrical points.
Further, the meander line metal layer is provided with a plurality of segments of meander lines connecting the low impedance mixer, and the lengths of the meander lines are different.
By adopting the technical scheme, the length of the meander line between the mixers can be adjusted at will to adjust the active impedance, thereby realizing the matching with the impedance of the mixers;
further, the mixer is not placed at the central symmetrical point of the meander line metal layer, and 4 low-impedance mixers or 2 low-impedance mixers can be placed at other positions of the center line of the meander line metal layer.
Further, the impedance of the low impedance mixer is 0-20 ohms.
Further, the electromagnetic wave on the meander line metal layer is transmitted to the butterfly metal layer loaded at two ends in the form of traveling wave, or forms standing wave together with the loaded butterfly metal layer to work.
Furthermore, a silicon hyper-hemispherical lens is placed on the back of the substrate where the terahertz antenna is located.
By adopting the technical scheme, the substrate surface wave effect of the terahertz antenna can be eliminated by arranging the silicon hyper-hemispherical lens on the back surface of the substrate.
The invention has the beneficial effects that: the invention designs a multi-source excited terahertz antenna with low input impedance, and a high-order in-phase series low-impedance mixer is embedded in the terahertz antenna to complete impedance matching without influencing the performance of the antenna; the butterfly-shaped loading meander line antenna can be embedded into a plurality of low-impedance mixers in the meander line, so that the performance of the antenna is not influenced while impedance matching is completed; the length of the meander line between the mixers can be adjusted at will to adjust the active impedance and complete the matching with the mixer impedance; the embedded low-impedance mixer can be increased or decreased according to the requirements of practical application, and the impedance matching between the antenna and the mixer is improved, so that the harmonic frequency is further increased, and the impedance mismatch is reduced.
Drawings
FIG. 1 is a schematic diagram of a butterfly-loaded meander line antenna with 4 low-impedance mixers embedded according to an embodiment of the present invention;
FIG. 2 is a diagram illustrating simulation of active reflection coefficients of an embodiment of the present invention with 4 low-impedance mixers embedded at positions A, B, C and D;
FIG. 3 is a diagram illustrating simulation of the active reflection coefficient of a second embodiment of the present invention with 2 low-impedance mixers embedded at the A and D positions;
FIG. 4 is a diagram illustrating simulation of active reflection coefficients of a third embodiment of the present invention with 2 low-impedance mixers embedded at positions B and C;
FIG. 5 is a far field radiation direction simulation diagram of an embodiment of the present invention with 4 low impedance mixers embedded at positions A, B, C and D;
FIG. 6 is a simulation diagram of far-field radiation direction of a second embodiment of the present invention with 2 low-impedance mixers embedded at the A and D positions;
FIG. 7 is a simulation diagram of far-field radiation directions of 2 low-impedance mixers embedded at positions B and C according to a third embodiment of the present invention;
FIG. 8 is a diagram of an embodiment of the present invention with associated parameters.
In the figure: 1. butterfly metal layer, 2, meander line metal layer, 3, low impedance mixer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood, however, that the description herein of specific embodiments is only intended to illustrate the invention and not to limit the scope of the invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, and the terms used herein in the specification of the present invention are for the purpose of describing particular embodiments only and are not intended to limit the present invention.
As shown in fig. 1 and 8, it is a terahertz antenna integrated with a high-temperature superconducting high-order in-phase series mixer, including a terahertz antenna; the terahertz antenna comprises butterfly metal layers 1 at two ends; a plurality of low-impedance mixers 3 are embedded between the butterfly metal layers 1 at the two ends; the plurality of low impedance mixers 3 are connected by a meander line metal layer 2; the mixers connected in series are arranged at the intersection point of the central line of the meander line metal layer 2 and the butterfly metal layer 1 and are symmetrically arranged relative to the central symmetry point of the terahertz antenna; the meander line metal layer 2 is provided with a plurality of meander lines connecting the low impedance mixer 3, and the length of the meander lines is different. The impedance of the low impedance mixer 3 is 0-20 ohms. The electromagnetic wave on the meander line metal layer 2 is transmitted to the butterfly metal layer 1 loaded on both ends in the form of traveling wave, or forms standing wave together with the loaded butterfly metal layer 1 to work. And a silicon hyper-hemispherical lens is arranged on the back surface of the substrate where the terahertz antenna is arranged.
The first embodiment is as follows:
referring to fig. 2 and 5, which are provided with 4 symmetrically distributed low impedance mixers 3, respectively at positions A, B, C and D, in the CST simulation software, the antenna material is provided as an ideal electrical conductor, placed on a magnesium oxide (with a relative dielectric constant of 9.6) substrate, and the detectors are respectively represented by 20 ohm discrete ports, performing multi-port active simulation, with active reflection coefficients and far-field radiation patterns as shown in fig. 2 and 5, respectively; when antenna parameters
=183 μm, 
=752 μm, 
=56 μm, 
=8 μm, 
=11 μm, 
=22 μm, 
=16 μm, 
=15 μm, 
=
=
When the grain size is 75 mu m, the active reflection coefficients of A, B, C and D of 4 symmetrically distributed low-impedance mixers (3) are respectively-19.5 dB, -24.4 dB, -24.8 dB and-19.5 dB, and the directivity coefficient reaches 9.06 dBi at 218 GHz;
example two:
referring to fig. 2 and 6, which are provided with 2 symmetrically distributed low impedance mixers 3, respectively arranged at positions a and D of fig. 1, in the CST simulation software, the antenna material is arranged as an ideal electrical conductor, placed on a magnesium oxide (with a relative permittivity of 9.6) substrate, and the detectors are respectively represented by discrete ports of 20 ohms, and multi-port active simulation is performed, with active reflection coefficients and far-field radiation patterns as shown in fig. 2 and 5, respectively; when antenna parameters
=183 μm, 
=752 μm, 
=56 μm, =8 μm, 
=11 μm, 
=22 μm, 
=16 μm, 
=15 μm, 
=
=
And when the frequency is 75 mu m, the active reflection coefficient of 2 symmetrically distributed low-impedance mixers (3) on A and D can reach-11.8 dB and the directivity coefficient can reach 9.4 dBi at 218 GHz.
Example three:
referring to fig. 3 and 7, which are provided with 2 symmetrically distributed low impedance mixers 3, respectively arranged at positions B and C of fig. 1, in the CST simulation software, the antenna material is arranged as an ideal electrical conductor, placed on a magnesium oxide (with a relative permittivity of 9.6) substrate, and the detectors are respectively represented by discrete ports of 20 ohms, and multi-port active simulation is performed, with active reflection coefficients and far-field radiation patterns as shown in fig. 2 and 5, respectively; when antenna parameters
=183 μm, 
=752 μm, 
=56 μm, 
=8 μm, 
=11 μm, 
=22 μm, 
=16 μm, 
=15 μm, 
=
=
When the diameter is 75 μm, the impedance matching at 218 GHz is good when the two ports B and C2 are excited, but the best impedance matching is realized at 219 GHz, the reflection coefficient can reach-11.2 dB, and the directivity coefficient can reach 8.81 dBi.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents or improvements made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. A terahertz antenna integrated with a high-temperature superconducting high-order in-phase series mixer is characterized by comprising a terahertz antenna; the terahertz antenna comprises butterfly metal layers (1) at two ends; a plurality of low-impedance mixers (3) are embedded between the butterfly metal layers (1) at the two ends; the plurality of low impedance mixers (3) are connected by a meander line metal layer (2).
2. Terahertz antenna integrated with a high-temperature superconducting high-order in-phase series mixer according to claim 1, wherein the low-impedance mixer (3) is arranged as an even number, and the series mixer is placed at the intersection of the meander line metal layer (2) and the center line of the butterfly metal layer (1) and is symmetrically placed with respect to the central symmetry point of the terahertz antenna.
3. The terahertz antenna integrating the high-temperature superconducting high-order in-phase series mixer as claimed in claim 1, wherein the meander line metal layer (2) is provided with a plurality of segments of meander lines connected with the low-impedance mixer (3), and the lengths of the meander lines are different.
4. The thz antenna integrating high-temperature superconducting high-order in-phase series mixer as claimed in claim 1, wherein the center symmetry point of the meander line metal layer (2) is not placed with mixer, and 4 low-impedance mixers (3) or 2 low-impedance mixers (3) can be placed at other positions of the center line of the meander line metal layer (2).
5. Terahertz antenna integrated with a high-temperature superconducting high-order in-phase series mixer according to claim 1, characterized in that the impedance of the low-impedance mixer (3) is 0-20 ohms.
6. The terahertz antenna integrating the high-temperature superconducting high-order in-phase series mixer as claimed in claim 1, wherein the electromagnetic wave on the meander line metal layer (2) is transmitted to the butterfly metal layer (1) loaded at two ends in the form of traveling wave, or forms a standing wave together with the butterfly metal layer (1) loaded to work.
7. The THz antenna of claim 1, wherein a silicon hyper-hemispherical lens can be placed on the back of the substrate on which the THz antenna is placed.
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| CN202210098394.3A CN114497989A (en) | 2022-01-27 | 2022-01-27 | Terahertz antenna integrated with high-temperature superconducting high-order in-phase series mixer |
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| CN202210098394.3A CN114497989A (en) | 2022-01-27 | 2022-01-27 | Terahertz antenna integrated with high-temperature superconducting high-order in-phase series mixer |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115051652A (en) * | 2022-05-20 | 2022-09-13 | 北京理工大学 | High-temperature superconducting subharmonic mixer based on double Y-shaped on-chip antennas and mixing method |
| CN115764260A (en) * | 2022-11-17 | 2023-03-07 | 南通大学 | Butterfly antenna suitable for embedding meander line of superconducting series Josephson double-crystal junction |
| CN115882217A (en) * | 2023-02-21 | 2023-03-31 | 南通大学 | Low-impedance multi-source excited semicircular folding antenna |
| CN116387818A (en) * | 2023-05-06 | 2023-07-04 | 南通大学 | Rectangular loading meander line antenna suitable for low-impedance serial device |
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| US20210041296A1 (en) * | 2018-04-02 | 2021-02-11 | The Regents Of The University Of California | System and Method for Photomixer-Based Heterodyne High-Frequency Spectrometer and Receiver |
| CN113823888A (en) * | 2021-05-06 | 2021-12-21 | 北京理工大学 | Double-frequency matching and second harmonic terahertz frequency mixer based on high-temperature superconducting technology |
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| US20210041296A1 (en) * | 2018-04-02 | 2021-02-11 | The Regents Of The University Of California | System and Method for Photomixer-Based Heterodyne High-Frequency Spectrometer and Receiver |
| CN113823888A (en) * | 2021-05-06 | 2021-12-21 | 北京理工大学 | Double-frequency matching and second harmonic terahertz frequency mixer based on high-temperature superconducting technology |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115051652A (en) * | 2022-05-20 | 2022-09-13 | 北京理工大学 | High-temperature superconducting subharmonic mixer based on double Y-shaped on-chip antennas and mixing method |
| CN115764260A (en) * | 2022-11-17 | 2023-03-07 | 南通大学 | Butterfly antenna suitable for embedding meander line of superconducting series Josephson double-crystal junction |
| CN115764260B (en) * | 2022-11-17 | 2024-10-11 | 南通大学 | Butterfly antenna applicable to embedded winding wire of superconductive series Josephson double crystal junction |
| CN115882217A (en) * | 2023-02-21 | 2023-03-31 | 南通大学 | Low-impedance multi-source excited semicircular folding antenna |
| CN116387818A (en) * | 2023-05-06 | 2023-07-04 | 南通大学 | Rectangular loading meander line antenna suitable for low-impedance serial device |
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