CN114497989A - Terahertz antenna integrated with high-temperature superconducting high-order in-phase series mixer - Google Patents

Abstract

The invention discloses a terahertz antenna integrated with a high-temperature superconducting high-order in-phase series mixer, which comprises a terahertz antenna; the terahertz antenna comprises butterfly metal layers at two ends; a plurality of low-impedance mixers are embedded between butterfly metal layers at two ends; the plurality of low impedance mixers are connected by a meander line metal layer. The invention designs a multi-source excited terahertz antenna with low input impedance, and a high-order in-phase series low-impedance mixer is embedded in the terahertz antenna to complete impedance matching without influencing the performance of the antenna; the butterfly-shaped loading meander line antenna can be embedded into a plurality of low-impedance mixers in the meander line, so that the performance of the antenna is not influenced while impedance matching is completed; the length of the meander line between the mixers can be adjusted at will to adjust the active impedance and complete the matching with the mixer impedance; the embedded low-impedance mixer can be increased or decreased according to the requirements of practical application, and the impedance matching between the antenna and the mixer is improved, so that the harmonic frequency is increased, and the impedance mismatch is reduced.

Description

A terahertz antenna integrating high-temperature superconducting high-order in-phase series mixers

technical field

The invention relates to a terahertz antenna integrating a high-temperature superconducting high-order in-phase series mixer, belonging to the fields of terahertz communication and superconductivity.

Background technique

Terahertz (THz) waves are electromagnetic waves of 0.1-10 THz. With its considerable absolute bandwidth, terahertz communication has the advantages of high transmission rate, large capacity, strong directionality, high security, and good penetration. However, due to the severe atmospheric attenuation in the terahertz band, higher requirements are placed on the efficient detection of ultrasensitive terahertz receivers. Semiconductor-based heterodyne receivers are developed using Schottky barrier diodes, high electron mobility transistors, and complementary metal oxide semiconductors. They can operate at room temperature, but require relatively high Local Oscillator (LO) power, which presents challenges as the operating frequency increases. Low temperature superconducting (LTS) thermionic bolometers (HEB) and superconductor-insulator-superconductor (SIS) mixers, which can operate at lower LO powers, are the most sensitive frequency downconverters to date. However, LTS devices need to be cooled to the liquid helium temperature (4.2 K) or below, which requires expensive liquid helium and cryogenic equipment. High temperature superconducting (HTS) mixers can operate at liquid nitrogen temperature (77K). High-temperature superconducting mixers have the advantages of low temperature, low cost, wide bandwidth, high sensitivity, low local oscillator power requirements, and high-order harmonics. They are ideal for terahertz heterodyne receivers.

Due to the low power consumption and high cost of THz sources, high-order harmonic mixers are particularly important in reducing the cost of local oscillators and improving the mixing performance in THz communications. The higher the number of harmonics, the lower the LO frequency and the lower the cost. Huabing Wang et al. reported that the Bi ₂ Sr ₂ CaCu ₂ O _8+x (BSCCO) intrinsic mixer achieved 98th harmonic mixing in 100 GHz detection. Considering impedance matching, Du Jia and Gao Xiang et al. integrated and studied a slot antenna suitable for YBa ₂ Cu ₃ O _7-δ (YBCO) step-edge mixers in the terahertz band, using coplanar waveguide feeding. The largest harmonic order they have measured so far is 31 for detection at 600 GHz. Aiming at the 210 GHz atmospheric window, a new terahertz antenna was introduced to improve the coupling efficiency between the mixer and the antenna, and achieved up to 146th harmonic mixing in the YBCO dual-crystal mixer. Subsequently, a series-structured mixer s-mixer was proposed. Benefiting from the synchronous operation of three series-connected mixers s, the 154th harmonic mixing was realized. Although the three YBCO dual crystal mixers connected in series work synchronously, there is an impedance mismatch between the antenna and each mixer, which has not yet been resolved. Therefore, if the impedance matching between the antenna and each mixer can be improved, the harmonic order can be expected to be further improved. Therefore, a suitable antenna needs to be applied to match the impedance of each YBCO dual crystal mixer in series.

SUMMARY OF THE INVENTION

In view of the problems existing in the above-mentioned prior art, the present invention provides a terahertz antenna integrating a high-temperature superconducting high-order in-phase series mixer, so as to solve the above-mentioned technical problems.

In order to achieve the above purpose, the technical solution adopted in the present invention is: a terahertz antenna integrating a high-temperature superconducting high-order in-phase series mixer, including a terahertz antenna; the terahertz antenna includes butterfly metal layers at both ends; A plurality of low-impedance mixers are embedded between the butterfly-shaped metal layers at the two ends; the plurality of low-impedance mixers are connected by a meandering wire metal layer.

By adopting the above technical solution, the butterfly-shaped loading meander wire antenna can embed multiple low-impedance mixers in the meander wire, so as to complete the impedance matching without affecting the antenna performance.

Further, the low-impedance mixers are set in a double number, and the mixers in series are placed at the intersection of the meander line metal layer and the center line of the butterfly-shaped metal layer, and are placed symmetrically about the center line of the terahertz antenna. .

By adopting the above technical solution, the symmetrical radiation patterns and the consistent resonance frequency points can be ensured by arranging the centrally symmetrical points.

Further, the metal layer of the meandering line is provided with a plurality of segments of meandering lines connecting the low-impedance mixers, and the lengths of the meandering lines are not equal.

By adopting the above technical solution, the length of the meandering line between the mixers can be adjusted arbitrarily, so as to adjust the active impedance, thereby realizing the matching with the impedance of the mixer;

Further, no mixer is placed on the center symmetrical point of the meandering metal layer, and four low-impedance mixers or two low-impedance mixers may be placed at other positions on the centerline of the meandering metal layer.

Further, the impedance of the low impedance mixer is 0-20 ohms.

Further, the electromagnetic wave on the meander wire metal layer is transmitted to the butterfly-shaped metal layer loaded on both ends in the form of traveling waves, or a standing wave is formed together with the loaded butterfly-shaped metal layer to work.

Further, a silicon hyperhemispheric lens is placed on the back of the substrate where the terahertz antenna is located.

By adopting the above technical solution, the substrate surface wave effect of the terahertz antenna can be eliminated by placing a silicon super-hemispherical lens on the backside of the substrate.

The beneficial effects of the present invention are as follows: the present invention designs a multi-source excitation low-input impedance terahertz antenna, and embeds a high-order in-phase series-connected low-impedance mixer in the terahertz antenna to complete impedance matching without affecting antenna performance; Butterfly-loaded meander wire antenna can embed multiple low-impedance mixers in the meander wire to complete impedance matching without affecting the antenna performance; the length of the meander wire between the mixers can be adjusted arbitrarily to adjust the active Impedance, complete the matching with the mixer impedance; the embedded low impedance mixer can be increased or decreased according to the needs of practical applications, by improving the impedance matching between the antenna and the mixer, thereby further increasing the harmonic order and reducing the impedance mismatch .

Description of drawings

1 is a schematic structural diagram of a butterfly-loaded meander wire antenna embedded with four low-impedance mixers according to an embodiment of the present invention;

2 is a schematic diagram of a simulation diagram of an active reflection coefficient with four low-impedance mixers embedded at positions A, B, C and D according to Embodiment 1 of the present invention;

FIG. 3 is a schematic diagram of a simulation diagram of an active reflection coefficient in which two low-impedance mixers are embedded at positions A and D according to Embodiment 2 of the present invention;

4 is a schematic diagram of a simulation diagram of an active reflection coefficient in which two low-impedance mixers are embedded at positions B and C according to Embodiment 3 of the present invention;

5 is a simulation diagram of the far-field radiation direction of four low-impedance mixers embedded at positions A, B, C, and D according to Embodiment 1 of the present invention;

6 is a simulation diagram of the far-field radiation direction of two low-impedance mixers embedded in the A and D positions according to Embodiment 2 of the present invention;

7 is a simulation diagram of the far-field radiation direction of two low-impedance mixers embedded at positions B and C in Embodiment 3 of the present invention;

FIG. 8 is a schematic diagram with related parameters according to Embodiment 1 of the present invention.

In the figure: 1. butterfly metal layer, 2. meander wire metal layer, 3. low impedance mixer.

Detailed ways

In order to make the objectives, technical solutions and advantages of the present invention more clear, the present invention will be further described in detail below through the accompanying drawings and embodiments. However, it should be understood that the specific embodiments described herein are only used to explain the present invention, and not to limit the scope of the present invention.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field of the present invention, and the terms used herein in the description of the present invention are only for describing specific implementations The examples are not intended to limit the invention.

As shown in FIG. 1 and FIG. 8 , it is a terahertz antenna integrating a high-temperature superconducting high-order in-phase series mixer, including a terahertz antenna; the terahertz antenna includes butterfly-shaped metal layers 1 at both ends; the A plurality of low-impedance mixers 3 are embedded between the butterfly-shaped metal layers 1 at both ends; the plurality of low-impedance mixers 3 are connected by a meander wire metal layer 2; the series-connected mixers are placed in the meander. On the intersection of the center line of the wire metal layer 2 and the butterfly metal layer 1, and placed symmetrically about the center line of the terahertz antenna; And the length of the meandering line varies. The impedance of the low impedance mixer 3 is 0-20 ohms. The electromagnetic wave on the meander wire metal layer 2 is transmitted to the butterfly-shaped metal layer 1 loaded on both ends in the form of traveling waves, or forms a standing wave together with the loaded butterfly-shaped metal layer 1 to work. A silicon hyperhemispheric lens is placed on the backside of the substrate where the terahertz antenna is located.

Example 1:

=183 μm,

=752 μm,

=56 μm,

=8 μm,

=11 μm,

=22 μm,

=16 μm,

=15 μm,

=

=

=75 μm时，A、B、C和 D上4个对称分布的低阻抗混频器（3）在218 GHz时，其有源反射系数分别为-19.5 dB，-24.4 dB，-24.8 dB和 -19.5 dB方向性系数达9.06 dBi；Referring to Figure 2 and Figure 5, it is provided with 4 symmetrically distributed low impedance mixers 3, which are respectively set at A, B, C and D positions. In the CST simulation software, the antenna material is set as an ideal conductor, placed in On a magnesium oxide (relative permittivity of 9.6) substrate, the detectors are represented by discrete ports of 20 ohms, respectively, and a multi-port active simulation is performed. The active reflection coefficient and far-field radiation pattern are shown in Figure 2 and Figure 5, respectively. display; when the antenna parameters

=183 μm,

=752 μm,

=56 μm,

=8 μm,

=11 μm,

=22 μm,

=16 μm,

=15 μm,

=

=

= 75 μm, the active reflection coefficients of four symmetrically distributed low impedance mixers (3) on A, B, C and D at 218 GHz are -19.5 dB, -24.4 dB, -24.8 dB and -19.5 dB directivity coefficient up to 9.06 dBi;

Embodiment 2:

=183 μm,

=752 μm,

=56 μm, =8 μm,

=11 μm,

=22 μm,

=16 μm,

=15 μm,

=

=

=75 μm时，A和 D上2个对称分布的低阻抗混频器（3）在218 GHz时，其有源反射系数可达-11.8 dB，方向性系数达9.4 dBi。Referring to Figure 2 and Figure 6, it is provided with two symmetrically distributed low impedance mixers 3, which are respectively set at positions A and D in Figure 1. In the CST simulation software, the antenna material is set as an ideal conductor, placed in an oxidized On a magnesium substrate (with a relative permittivity of 9.6), the detectors are represented by discrete ports of 20 ohms, respectively, and a multi-port active simulation is performed. The active reflection coefficient and far-field radiation pattern are shown in Figures 2 and 5, respectively. ; when the antenna parameter

=183 μm,

=752 μm,

=56 μm, =8 μm,

=11 μm,

=22 μm,

=16 μm,

=15 μm,

=

=

= 75 μm, the two symmetrically distributed low-impedance mixers (3) on A and D have an active reflection coefficient of -11.8 dB and a directivity coefficient of 9.4 dBi at 218 GHz.

Embodiment three:

=183 μm,

=752 μm,

=56 μm,

=8 μm,

=11 μm,

=22 μm,

=16 μm,

=15 μm,

=

=

=75 μm时，B和C2两个端口激励，218 GHz处的阻抗匹配良好，但在219 GHz处最佳，其反射系数可达-11.2 dB，方向性系数达8.81 dBi。Referring to Figure 3 and Figure 7, it is provided with two symmetrically distributed low impedance mixers 3, which are respectively set at positions B and C in Figure 1. In the CST simulation software, the antenna material is set as an ideal conductor, placed in an oxidized On a magnesium substrate (with a relative permittivity of 9.6), the detectors are represented by discrete ports of 20 ohms, respectively, and a multi-port active simulation is performed. The active reflection coefficient and far-field radiation pattern are shown in Figures 2 and 5, respectively. ; when the antenna parameter

=183 μm,

=752 μm,

=56 μm,

=8 μm,

=11 μm,

=22 μm,

=16 μm,

=15 μm,

=

=

= 75 μm, the two ports B and C2 are excited, the impedance matching at 218 GHz is good, but the best at 219 GHz, the reflection coefficient can reach -11.2 dB, and the directivity coefficient can reach 8.81 dBi.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modification, equivalent replacement or improvement made within the spirit and principle of the present invention shall be included in the protection of the present invention. within the range.

Claims (7)

1. A terahertz antenna integrated with a high-temperature superconducting high-order in-phase series mixer is characterized by comprising a terahertz antenna; the terahertz antenna comprises butterfly metal layers (1) at two ends; a plurality of low-impedance mixers (3) are embedded between the butterfly metal layers (1) at the two ends; the plurality of low impedance mixers (3) are connected by a meander line metal layer (2).

2. Terahertz antenna integrated with a high-temperature superconducting high-order in-phase series mixer according to claim 1, wherein the low-impedance mixer (3) is arranged as an even number, and the series mixer is placed at the intersection of the meander line metal layer (2) and the center line of the butterfly metal layer (1) and is symmetrically placed with respect to the central symmetry point of the terahertz antenna.

3. The terahertz antenna integrating the high-temperature superconducting high-order in-phase series mixer as claimed in claim 1, wherein the meander line metal layer (2) is provided with a plurality of segments of meander lines connected with the low-impedance mixer (3), and the lengths of the meander lines are different.

4. The thz antenna integrating high-temperature superconducting high-order in-phase series mixer as claimed in claim 1, wherein the center symmetry point of the meander line metal layer (2) is not placed with mixer, and 4 low-impedance mixers (3) or 2 low-impedance mixers (3) can be placed at other positions of the center line of the meander line metal layer (2).

5. Terahertz antenna integrated with a high-temperature superconducting high-order in-phase series mixer according to claim 1, characterized in that the impedance of the low-impedance mixer (3) is 0-20 ohms.

6. The terahertz antenna integrating the high-temperature superconducting high-order in-phase series mixer as claimed in claim 1, wherein the electromagnetic wave on the meander line metal layer (2) is transmitted to the butterfly metal layer (1) loaded at two ends in the form of traveling wave, or forms a standing wave together with the butterfly metal layer (1) loaded to work.

7. The THz antenna of claim 1, wherein a silicon hyper-hemispherical lens can be placed on the back of the substrate on which the THz antenna is placed.

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