CN114497279B - Preparation method of high-performance photoelectric detector - Google Patents
Preparation method of high-performance photoelectric detector Download PDFInfo
- Publication number
- CN114497279B CN114497279B CN202210036065.6A CN202210036065A CN114497279B CN 114497279 B CN114497279 B CN 114497279B CN 202210036065 A CN202210036065 A CN 202210036065A CN 114497279 B CN114497279 B CN 114497279B
- Authority
- CN
- China
- Prior art keywords
- mose
- substrate
- performance
- seconds
- photoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 238000009832 plasma treatment Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 30
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 8
- 239000012300 argon atmosphere Substances 0.000 claims description 6
- 239000002390 adhesive tape Substances 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 239000002064 nanoplatelet Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000001514 detection method Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 5
- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 abstract description 3
- 230000007847 structural defect Effects 0.000 abstract description 3
- 230000004298 light response Effects 0.000 abstract description 2
- 229910016001 MoSe Inorganic materials 0.000 abstract 3
- 238000005215 recombination Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical group [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 229910017299 Mo—O Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a preparation method of a high-performance photoelectric detector, belongs to the technical field of photoelectric materials and devices, and aims to provide a preparation method of a high-performance photoelectric detector, and solve the problems of structural defects, instability and low light response of the existing molybdenum diselenide photoelectric detector. It adopts effective O 2 Plasma treatment to prepare multilayer MoSe for visible and near infrared detection 2 Photodetector, via O 2 Plasma treated MoSe 2 Exhibits significantly improved performance in MoSe 2 And a strong built-in electric field is generated inside, so that the recombination of photocarriers is effectively inhibited, and the photoelectric performance is obviously improved. The preparation method is suitable for the high-performance molybdenum diselenide photoelectric detector.
Description
Technical Field
The invention belongs to the technical field of photoelectric materials and devices, and particularly relates to a preparation method of a high-performance photoelectric detector.
Background
Two-dimensional (2D) materials with unique structure and physical properties are materials that are urgently needed to be developed in next-generation high-performance photodetectors. Two-dimensional Transition Metal Dihalides (TMDC) have also attracted increasing attention in photo-detection applications due to their tunable bandgap and excellent photo-electric properties. Wherein molybdenum diselenide (MoSe) 2 ) As an indispensable candidate in TMDC series materials, has a direct band gap of 1.55eV, strong photoluminescence, and large exciton binding energy. It exhibits better light absorption (5% -10%) compared to other TMDCs, which is advantageous for sensitive light detection.
However, like other TMDCs, moSe 2 Impurities, scattering, and structural defects also exist, which greatly limit device performance. For MoSe 2 Photodetectors, due to the difficulty of controlled doping, have difficulty achieving high photoelectric performance. Thus, there is a need to develop efficient methods to improve device performance. In recent years, despite the heterojunction and homojunction structures, the problem of low detection rate of the detector is faced. Furthermore, the preparation of these processes is complex and difficult to controlAnd these strategies have focused mainly on improving one performance parameter, while sacrificing others. In addition to structural engineering, device performance is also subject to MoSe 2 Internal intrinsic defects and interfacial impurities. This not only results in large hysteresis and delayed response dynamics in the photodetector, but also results in serious instability problems. There is therefore a need to use new methods to build high performance MoSe 2 An optoelectronic device.
Disclosure of Invention
The invention aims at: the preparation method of the high-performance photoelectric detector solves the problems of structural defects, instability and low light response of the existing molybdenum diselenide photoelectric detector.
The technical scheme adopted by the invention is as follows:
the preparation method of the high-performance photoelectric detector comprises the following steps:
s1, mechanically stripping MoSe by using transparent adhesive tape 2 Transferring the sheet onto a substrate, patterning the substrate by photolithography, depositing gold electrode on the substrate by electron beam, and washing off the unpatterned electrode portion by acetone to obtain MoSe 2 The photoelectric device is characterized in that a substrate is subjected to patterning treatment by adopting reverse photoresist during photoetching, front exposure for 4.5 seconds and flood exposure for 90 seconds are respectively carried out, the thickness of a gold electrode deposited on the substrate by an electron beam is 60nm, and the deposition rate is 20nm/h;
s2, annealing the prepared photoelectric device in the step 1 in an argon atmosphere at the annealing temperature of 300 ℃ for 3 hours at the heating rate of 20 ℃/min;
s3, passing through a reactive ion etching machine to obtain a metal oxide semiconductor (MoSe) 2 MoSe of photoelectric device 2 O on sheet 2 Plasma treatment to prevent MoSe 2 Overetching on nanoplatelets, moSe 2 The flakes were processed twice, each time O 2 Plasma treatment for 15 seconds and interval for 10 seconds to finally prepare the MoSe 2 -O 2 A photodetector.
In the above scheme, in the step S3, O is performed 2 Controlling reaction dissociation during plasma treatmentThe pressure of the sub-etcher was 470 mTorr, the oxygen flow was 5sccm, and the power was 20mW.
In the above scheme, the substrate is silicon dioxide-silicon (SiO 2 /Si) substrate.
In summary, due to the adoption of the technical scheme, the beneficial effects of the invention are as follows:
1. in the invention, for MoSe 2 Sheet process O 2 After the plasma treatment, oxygen atoms are chemically adsorbed to MoSe 2 Forms Mo-O and Se-O bonds on the surface of the substrate, and bonds oxygen atoms to provide an electron-rich atmosphere, thereby effectively reducing intrinsic selenium vacancies and regulating MoSe 2 Thereby lowering the band gap and enhancing light absorption.
2. In the invention, for MoSe 2 Sheet process O 2 Plasma treatment, controlling the pressure of the reactive ion etcher to 470 mTorr, the oxygen flow to 5sccm and the power to 20mW, ensuring MoSe 2 Is not excessively etched, ensure O 2 The plasma is only to MoSe 2 And passivating the internal defects. The oxide layer formed by the Mo-O and Se-O bonds also plays a role of a protective layer to prevent oxygen and moisture in the air and internal MoSe 2 The reaction takes place. Warp O 2 MoSe after plasma treatment 2 A strong built-in electric field is generated inside the compound optical carrier, so that the compound of the optical carrier is effectively inhibited, the photoelectric performance is obviously improved, and the prepared MoSe 2 -O 2 The response time of the photoelectric detector is 52 mu s, and the high response rate reaches 889mA W -1 The detection rate is close to 3.37 multiplied by 10 14 Jones. Meanwhile, due to the perturbation of O atoms in Se-Mo sublattices, the bandgap energy is contracted, and MoSe 2 -O 2 The photodetector has better near infrared response, and MoSe besides visible light detection 2 -O 2 The response spectrum of the photodetector can be further extended to the near infrared (λ=980 nm) so that it can operate in the Near Infrared (NIR) region.
3. In the invention, the prepared photoelectric device is annealed in the argon atmosphere at 300 ℃ to effectively improve the gold electrode and MoSe 2 Ohmic contact therebetween.
Drawings
FIG. 1 shows the oxygen plasma-induced MoSe of the present invention 2 A schematic diagram;
FIG. 2 shows MoSe of the present invention 2 -O 2 A schematic diagram of a photodetector;
FIG. 3 shows MoSe of the present invention 2 -O 2 Photodetector and MoSe 2 Photo-response performance contrast diagram of the photo-detector under 850nm light;
FIG. 4 shows MoSe of the present invention 2 -O 2 Photo response plot of photodetector at 980 nm.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: reference numerals and letters denote similar items throughout the following figures, and thus once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or those that are conventionally put in use of the inventive product, are merely for convenience of description of the present invention, and are not indicative or implying that the apparatus or element to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal," "vertical," and the like do not denote a requirement that the component be absolutely horizontal or overhang, but rather may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; the mechanical connection can be made or the electrical connection can be made; can be directly connected or indirectly connected through an intermediate medium, and can be the communication between the two original parts. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The preparation method of the high-performance photoelectric detector comprises the following steps:
s1, mechanically stripping MoSe by using transparent adhesive tape 2 Transferring the sheet onto a substrate, patterning the substrate by photolithography, depositing gold electrode on the substrate by electron beam, and washing off the unpatterned electrode portion by acetone to obtain MoSe 2 The photoelectric device is characterized in that a substrate is subjected to patterning treatment by adopting reverse photoresist during photoetching, front exposure for 4.5 seconds and flood exposure for 90 seconds are respectively carried out, the thickness of a gold electrode deposited on the substrate by an electron beam is 60nm, and the deposition rate is 20nm/h;
s2, annealing the prepared photoelectric device in the step 1 in an argon atmosphere at the annealing temperature of 300 ℃ for 3 hours at the heating rate of 20 ℃/min;
s3, passing through a reactive ion etching machine to obtain a metal oxide semiconductor (MoSe) 2 MoSe of photoelectric device 2 O on sheet 2 Plasma deviceTreatment of the daughter to prevent the formation of MoSe 2 Overetching on nanoplatelets, moSe 2 The flakes were processed twice, each time O 2 Plasma treatment for 15 seconds and interval for 10 seconds to finally prepare the MoSe 2 -O 2 A photodetector.
Further, in the step S3, O is performed 2 During plasma treatment, the pressure of the reactive ion etcher was controlled to 470 mTorr, the oxygen flow rate was 5sccm, and the power was 20mW.
Further, the substrate is a silicon dioxide-silicon substrate (SiO 2 /Si)。
In the implementation process, the MoSe mechanically peeled by using the transparent adhesive tape 2 The flakes were transferred onto a silicon dioxide-silicon substrate and then gold electrodes were patterned and deposited by photolithography and electron beam deposition, respectively. To improve gold electrode and MoSe 2 Ohmic contact between the two, and annealing the prepared photoelectric device in an argon atmosphere at 300 ℃. Finally, the MoSe is etched in a reaction ion etching machine 2 O on sheet 2 And (5) plasma treatment. The pressure, oxygen flow and power of the reactive ion etcher were 470 mTorr, 5sccm and 20mW, respectively. The control of pressure, oxygen flow and power can ensure MoSe 2 Not over etched, but to MoSe 2 Passivation of internal defects. The oxide layer formed by the Mo-O and Se-O bonds also plays a role of a protective layer to prevent oxygen and moisture in the air and internal MoSe 2 The reaction takes place. Thus, via O 2 Plasma treated MoSe 2 Exhibiting significantly improved performance. In MoSe 2 A strong built-in electric field is generated inside the compound optical carrier, so that the compound of the optical carrier is effectively inhibited, the photoelectric performance is obviously improved, and the prepared MoSe 2 -O 2 The response time of the photoelectric detector is 52 mu s, and the high response rate reaches 889mA w -1 The detection rate is close to 3.37 multiplied by 10 14 Jones. Meanwhile, due to the perturbation of O atoms in Se-Mo sublattices, the bandgap energy is contracted, and MoSe 2 -O 2 The photodetector has better near infrared response, and MoSe besides visible light detection 2 -O 2 The response spectrum of the photodetector can be further extended to the near infrared (λ=980 nm)Making it operable in the Near Infrared (NIR) region.
Example 1
The preparation method of the high-performance photoelectric detector comprises the following steps:
s1, mechanically stripping MoSe by using transparent adhesive tape 2 Transferring the sheet onto a substrate, patterning the substrate by photolithography, depositing gold electrode on the substrate by electron beam, and washing off the unpatterned electrode portion by acetone to obtain MoSe 2 The photoelectric device is characterized in that a substrate is subjected to patterning treatment by adopting reverse photoresist during photoetching, front exposure for 4.5 seconds and flood exposure for 90 seconds are respectively carried out, the thickness of a gold electrode deposited on the substrate by an electron beam is 60nm, and the deposition rate is 20nm/h;
s2, annealing the prepared photoelectric device in the step 1 in an argon atmosphere at the annealing temperature of 300 ℃ for 3 hours at the heating rate of 20 ℃/min;
s3, passing through a reactive ion etching machine to obtain a metal oxide semiconductor (MoSe) 2 MoSe of photoelectric device 2 O on sheet 2 Plasma treatment to prevent MoSe 2 Overetching on nanoplatelets, moSe 2 The flakes were processed twice, each time O 2 Plasma treatment for 15 seconds and interval for 10 seconds to finally prepare the MoSe 2 -O 2 A photodetector.
Example 2
On the basis of example 1, in the step S3, O is performed 2 During plasma treatment, the pressure of the reactive ion etcher was controlled to 470 mTorr, the oxygen flow rate was 5sccm, and the power was 20mW.
Example 3
On the basis of example 1, the substrate was a silicon dioxide-silicon substrate (SiO 2 /Si)。
The above-described embodiments of the present invention. The foregoing description of the preferred embodiments of the present invention is not obvious contradiction or on the premise of a certain preferred embodiment, and the preferred embodiments can be arbitrarily overlapped and combined, and the embodiments and specific parameters in the embodiments are only for clearly describing the invention verification process of the inventor, and are not intended to limit the scope of the invention, and the scope of the invention is still subject to the claims, and all equivalent structural changes made by applying the specification and the content of the drawings of the present invention are included in the scope of the invention.
Claims (3)
1. The preparation method of the high-performance photoelectric detector is characterized by comprising the following steps of:
s1, mechanically stripping MoSe by using transparent adhesive tape 2 Transferring the sheet onto a substrate, patterning the substrate by photolithography, depositing gold electrode on the substrate by electron beam, and washing off the unpatterned electrode portion by acetone to obtain MoSe 2 The photoelectric device is characterized in that a substrate is subjected to patterning treatment by adopting reverse photoresist during photoetching, front exposure for 4.5 seconds and flood exposure for 90 seconds are respectively carried out, the thickness of a gold electrode deposited on the substrate by an electron beam is 60nm, and the deposition rate is 20nm/h;
s2, annealing the prepared photoelectric device in the step 1 in an argon atmosphere at the annealing temperature of 300 ℃ for 3 hours at the heating rate of 20 ℃/min;
s3, passing through a reactive ion etching machine to obtain a metal oxide semiconductor (MoSe) 2 MoSe of photoelectric device 2 O on sheet 2 Plasma treatment to prevent MoSe 2 Overetching on nanoplatelets, moSe 2 The flakes were processed twice, each time O 2 Plasma treatment for 15 seconds and interval for 10 seconds to finally prepare the MoSe 2 -O 2 A photodetector.
2. The method for manufacturing a high performance photodetector according to claim 1, wherein in said step S3, O is performed 2 During plasma treatment, the pressure of the reactive ion etcher was controlled to 470 mTorr, the oxygen flow rate was 5sccm, and the power was 20mW.
3. A method of manufacturing a high performance photodetector as defined in claim 1, whereinThe substrate is SiO 2 A Si substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210036065.6A CN114497279B (en) | 2022-01-13 | 2022-01-13 | Preparation method of high-performance photoelectric detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210036065.6A CN114497279B (en) | 2022-01-13 | 2022-01-13 | Preparation method of high-performance photoelectric detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114497279A CN114497279A (en) | 2022-05-13 |
| CN114497279B true CN114497279B (en) | 2023-07-28 |
Family
ID=81511590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210036065.6A Active CN114497279B (en) | 2022-01-13 | 2022-01-13 | Preparation method of high-performance photoelectric detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114497279B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108565301A (en) * | 2018-04-08 | 2018-09-21 | 哈尔滨工业大学 | Photodetector and preparation method based on metal surface plasma induction two waveband response |
| CN111893565A (en) * | 2020-08-04 | 2020-11-06 | 中国人民解放军国防科技大学 | Method for growing single-layer molybdenum disulfide or molybdenum diselenide by using promoter |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110049379A1 (en) * | 2009-08-26 | 2011-03-03 | The Regents Of The University Of California | Neutron detectors made of inorganic materials and their method of fabrication |
| CN104681642A (en) * | 2014-10-22 | 2015-06-03 | 苏州瑞晟纳米科技有限公司 | Oxygen plasma back electrode processing technology capable of improving performance of copper indium gallium selenide thin-film solar cell |
| EP3082152B1 (en) * | 2015-04-16 | 2023-07-19 | Cornell University | Monolayer films of semiconducting metal dichalcogenides, methods of making same, and uses of same |
| US20190305157A1 (en) * | 2018-04-02 | 2019-10-03 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Photodetector |
| CN110060929A (en) * | 2019-04-25 | 2019-07-26 | 中南大学 | A kind of MoSe2The preparation method of Homojeneous p-n Junction in face |
| CN110289334B (en) * | 2019-07-02 | 2021-06-04 | 电子科技大学 | Photoelectric detector |
| CN111029416B (en) * | 2019-10-30 | 2021-08-03 | 北京大学 | Circularly polarized light detector and preparation method thereof |
| CN111463295A (en) * | 2020-04-14 | 2020-07-28 | 华中科技大学 | Oxygen plasma treated selenium-bismuth oxide nanosheet photoelectric detector and preparation method thereof |
| CN111628020B (en) * | 2020-05-19 | 2021-10-08 | 华中科技大学 | Photodiode based on TMDCs transverse PIN homojunction and preparation method |
-
2022
- 2022-01-13 CN CN202210036065.6A patent/CN114497279B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108565301A (en) * | 2018-04-08 | 2018-09-21 | 哈尔滨工业大学 | Photodetector and preparation method based on metal surface plasma induction two waveband response |
| CN111893565A (en) * | 2020-08-04 | 2020-11-06 | 中国人民解放军国防科技大学 | Method for growing single-layer molybdenum disulfide or molybdenum diselenide by using promoter |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114497279A (en) | 2022-05-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106601857B (en) | Photoconductive detector and preparation method based on boron-doping silicon quantum dot/graphene/silicon dioxide | |
| JP5863391B2 (en) | Method for manufacturing crystalline silicon solar cell | |
| AU2011302575A1 (en) | Method, process and fabrication technology for high-efficency low-cost crytalline silicon solar cells | |
| WO2013145008A1 (en) | Photovoltaic element, method of manufacturing same, and solar cell module | |
| JP2018201016A (en) | Method for manufacturing hetero-junction type solar cell and hetero-junction type solar cell | |
| CN106653932B (en) | SiC avalanche photodiode and preparation method thereof | |
| CN104157720B (en) | A kind of silica-based avalanche photodetector of Graphene and preparation method of mixed structure | |
| Nijs et al. | Overview of solar cell technologies and results on high efficiency multicrystalline silicon substrates | |
| CN111540791A (en) | Solar cell and manufacturing method thereof | |
| WO2014072833A9 (en) | Molybdenum substrates for cigs photovoltaic devices | |
| TW201515244A (en) | Solar cell and solar cell module | |
| Xie et al. | A progress review on challenges and strategies of flexible Cu2ZnSn (S, Se) 4 solar cells | |
| CN103872183B (en) | A kind of single-sided polishing method | |
| CN110993707B (en) | PIN diode based on gallium oxide multilayer stacked structure and preparation method thereof | |
| CN114497279B (en) | Preparation method of high-performance photoelectric detector | |
| JP2011091131A (en) | Method of manufacturing crystal silicon based solar cell | |
| Martin-Palma et al. | Antireflective porous-silicon coatings for multicrystalline solar cells: the effects of chemical etching and rapid thermal processing | |
| CN115513327A (en) | Detector for in-situ regulation and control of Schottky barrier height by utilizing ultraviolet light and preparation method thereof | |
| CN111081886B (en) | PIN diode based on gallium oxide perovskite multilayer stacked structure and preparation method thereof | |
| JP6114205B2 (en) | Manufacturing method of solar cell | |
| CN109360894B (en) | Perovskite battery with nano structure at cathode grating bulge and preparation method thereof | |
| KR102212042B1 (en) | Solar cell comprising buffer layer formed by atomic layer deposition and method of fabricating the same | |
| KR102212040B1 (en) | Method of fabricating solar cell comprising buffer layer formed by atomic layer deposition | |
| KR20100093291A (en) | Method of fabricating solar sell | |
| TWI399861B (en) | Structure of solar host organic and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |