CN114497099A - Photosensitive detector based on composite dielectric grid photoconduction and working method thereof - Google Patents
Photosensitive detector based on composite dielectric grid photoconduction and working method thereof Download PDFInfo
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14665—Imagers using a photoconductor layer
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Abstract
The invention discloses a photosensitive detector based on composite dielectric grid photoconduction and a working method thereof. The photosensitive detector comprises a composite dielectric gate MOS capacitor, a composite dielectric gate MOSFET part and a photoelectron modulation structure which are formed above the same P-type semiconductor substrate, wherein the photoelectron modulation structure comprises a substrate electrode, a photoelectron modulation P + doped region and a photoelectron modulation electrode; the substrate electrode is arranged at the bottom of the P-type semiconductor substrate; an N-type source electrode and a drain electrode are arranged on the surface of the substrate of the composite dielectric gate MOSFET part, and a photoelectron modulation P + doped region is arranged on the periphery of the N-type source electrode and the drain electrode; the photoelectron modulation electrode is positioned on the surface of the photoelectron modulation P + doped region. The invention can realize collection of photoelectrons in a body region and inhibition of electrical crosstalk between adjacent detectors when MOS capacitance is sensitive by controlling an electric field between the bottom of the P-type substrate and the photoelectron modulation P + doping region, thereby effectively improving the quantum efficiency and MTF of the photosensitive detector.
Description
Technical Field
The invention relates to an imaging detection device, in particular to a structure and a working mechanism of the imaging detection device from an infrared band to a visible band to an ultraviolet band, and particularly relates to a photosensitive detector based on composite dielectric grid photoconduction and a working method thereof.
Background
The solid-state imaging sensor market is flourishing and experiencing exponential growth due to the demand in the areas of digital and video cameras, mobile imaging, surveillance, and biometrics. Traditionally, CCD is the dominant imaging technology. However, with the rapid development of CMOS technology, CMOS Image Sensor (CIS) technology is widely used in many fields, such as PC cameras, mobile phones, high-end digital cameras, etc., and with the iterative optimization of technology, it can be compared with CCD in some performance aspects, and it has become a product alternative to CCD. However, the conventional CMOS-APS is composed of a photodiode and a readout gate transistor, and there are usually four or five transistors, and as the size of the pixel decreases, the CIS has difficulty in maintaining a large full-well charge to obtain a large signal-to-noise ratio, which makes it difficult to ensure image quality.
Patent cn201210442007.x proposes a double-transistor photosensitive detector based on a composite dielectric gate MOSFET, which not only improves imaging quality, but also reduces pixel size. However, since the ratio of the thickness (more than 2 um) of the detector to the size (submicron) of the detector is large, the depth of the depletion region under the exposure voltage is difficult to reach 2um, so that photo-generated electrons in a part of the body region are directly compounded during exposure, a part of photoelectrons are lost, the quantum efficiency is reduced, in addition, in the electron collection process, the electrical crosstalk exists, the Modulation Transfer Function (MTF) is lost, and finally, the image quality is severely restricted.
Disclosure of Invention
The invention aims to provide a photosensitive detector which improves the quantum efficiency by a photoconductive principle, and generates a potential difference in a body region between a photoelectron modulation P + doped region and a substrate electrode so as to fully collect photo-generated electrons; meanwhile, the application of photoconduction can also inhibit crosstalk between detectors and improve MTF. It is another object of the present invention to provide a method of operating the above photosensitive detector.
The technical scheme adopted by the detector is as follows:
the photosensitive detector based on the composite dielectric grid photoconduction comprises a composite dielectric grid MOS capacitor and a composite dielectric grid MOSFET part which are formed above the same P-type semiconductor substrate, and further comprises a photoelectron modulation structure, wherein the photoelectron modulation structure comprises a substrate electrode, a photoelectron modulation P + doped region and a photoelectron modulation electrode; the substrate electrode is arranged at the bottom of the P-type semiconductor substrate; an N-type source electrode and a drain electrode are arranged on the surface of the substrate of the composite dielectric gate MOSFET part, and the photoelectron modulation P + doped region is arranged on the periphery of the N-type source electrode and the drain electrode; the photoelectron modulation electrode is positioned on the surface of the photoelectron modulation P + doped region.
Furthermore, the composite dielectric gate MOS capacitor and the composite dielectric gate MOSFET partially share the composite dielectric gate, and comprise a bottom dielectric layer, a floating gate, a top dielectric layer and a control gate from bottom to top.
Furthermore, a shallow trench isolation region is arranged between the composite dielectric gate MOS capacitor and the composite dielectric gate MOSFET part; the depth of the photoelectron modulation P + doped region does not exceed the depth of the shallow trench isolation region.
Further, when a plurality of photosensitive detectors are arranged to form an array, the photoelectron modulation electrodes are arranged every n photosensitive detectors, and n is more than or equal to 1.
Further, the P-type semiconductor substrate is doped with uniform concentration or gradient concentration.
Furthermore, when the P-type semiconductor substrate is doped with gradient concentration, the doping concentration is gradually reduced from the bottom of the substrate to the surface of the substrate.
Further, when a plurality of the photosensitive detectors are arranged, deep trench isolation regions are arranged between adjacent detectors.
Further, the substrate electrode is arranged at the bottom of the substrate of the composite dielectric gate MOS capacitor.
Further, the substrate electrode is less pressurized than the optoelectronic modulation electrode.
The invention utilizes the working method of the photosensitive detector based on the composite dielectric grid photoconduction, and comprises the following steps:
(1) collection of photoelectrons: when the photosensitive detector senses light, the control grid is applied with positive voltage, the substrate electrode is applied with negative voltage, the photoelectron modulation electrode is applied with negative voltage, and the magnitude of the negative voltage is larger than that of the substrate electrode; the composite dielectric gate MOS capacitor generates a depletion region, and meanwhile, an electric field in the vertical direction is generated in a region where the capacitor is not depleted, the direction of the electric field points to the bottom of the substrate from the surface of the composite dielectric gate MOS capacitor, and photo-generated electrons are collected below the composite dielectric gate MOS capacitor under the action of the electric field;
(2) readout amplification of photoelectrons: the source electrode of the composite dielectric gate MOSFET part is grounded, the drain electrode is connected with a positive bias voltage, the voltage of the substrate electrode and the photoelectron modulation electrode is kept the same as the photoelectron collection state, a slope voltage is applied to the control gate, and the threshold value of the composite dielectric gate MOSFET part is read;
(3) resetting of photoelectrons: the control grid of the composite dielectric grid MOS capacitor is applied with negative bias, the substrate electrode, the photoelectron modulation electrode and the source electrode of the composite dielectric grid MOSFET part are grounded, and accumulated electrons are pumped away by the source electrode and the drain electrode after a certain time.
The mechanism for collecting the photo-generated electrons in the composite dielectric gate MOS capacitor body area is as follows:
when exposure is carried out, positive voltage is applied to a control grid of the composite dielectric gate MOS capacitor, negative voltage is applied to an electrode at the bottom of the substrate, a depletion region is generated in the composite dielectric gate MOS capacitor, the body region cannot be completely depleted due to the fact that the photosensitive detector unit is thick, and photoelectrons generated in the undepleted body region cannot move to the depletion region due to long diffusion distance and can be partially compounded. At the moment, if the photoelectron modulation electrode is applied with negative voltage and the voltage of the photoelectron modulation electrode is larger than that of the substrate electrode, an electric field in the vertical direction is generated in the region of the capacitor non-depleted region, the direction of the electric field points to the bottom of the substrate from the surface of the composite dielectric gate MOS capacitor, and photo-generated electrons are immediately collected below the composite dielectric gate MOS capacitor under the action of the electric field, so that the occupation ratio of the photo-generated electrons generated in compounding is reduced.
The invention can effectively improve the quantum efficiency of the photosensitive detector and inhibit the electrical crosstalk through the photoconduction, and has the following specific characteristics and advantages:
(1) the quantum efficiency is high: photo-generated electrons in the body region of the composite dielectric gate MOS capacitor which is not depleted can not be compounded due to long diffusion distance during exposure, so that the photo-generated electrons in the body region can be fully collected, and the compounding proportion is reduced.
(2) The dynamic range is large: when imaging in an environment with weak light intensity, a larger proportion of electrons are used for final imaging, and the dynamic range of the photosensitive detector is increased.
(3) The crosstalk is small: an electric field extending to the body region always exists in the vertical direction of the composite dielectric gate, the movement direction of electrons is limited, and the tendency of moving to other detectors is reduced.
Drawings
FIG. 1 is a two-dimensional block diagram of a photosensitive detector of the present invention;
FIG. 2 is a view taken along the line X in FIG. 11-X1A sectional view in the direction of;
FIG. 3 is a schematic view showing the direction of an electric field in the exposure state of FIG. 2;
FIG. 4 is a graph of the potential of the optoelectronic modulation region in the exposed state;
FIG. 5 is a view taken along the line Y in FIG. 11-Y1A sectional view in the direction of;
FIG. 6 is a graph of the substrate concentration doping of FIG. 5;
FIG. 7 is a view taken along the line Y in FIG. 12-Y2A sectional view in the direction of;
FIG. 8 is a view taken along the line Y in FIG. 13-Y3A sectional view in the direction of;
FIG. 9 is an optoelectronic modulating electrode array level schematic.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in further detail below with reference to the accompanying drawings.
The embodiment provides a photosensitive detector for effectively improving quantum efficiency and inhibiting electrical crosstalk based on composite dielectric grid photoconduction, which is manufactured on a P-type semiconductor substrate and comprises a composite dielectric grid MOS capacitor with a photosensitive function, a composite dielectric grid MOSFET part with a reading function and a photoelectron modulation structure with a function of improving quantum efficiency, wherein a two-dimensional structure of the photosensitive detector is shown in fig. 1, and structural schematic diagrams of the photosensitive detector along different sections are respectively shown in fig. 2, fig. 5 and fig. 7-fig. 9.
As shown in fig. 2, the MOS capacitor and the MOSFET of the photosensitive detector share the composite dielectric gate, and the two implement separation of the functional regions through shallow trench isolation; the MOS capacitor comprises a bottom dielectric layer, a floating gate, a top dielectric layer and a control gate from bottom to top, wherein the dielectric layers are formed by adopting a chemical vapor deposition process, and a composite dielectric gate structure of an MOS capacitor part and an MOSFET part can be respectively arranged. In this embodiment, the bottom dielectric layer is made of silicon dioxide, silicon nitride or other high-dielectric-constant dielectric, the top dielectric layer is made of a three-layer structure of silicon dioxide/silicon nitride/silicon dioxide or silicon dioxide/aluminum oxide/silicon dioxide, the thickness of the dielectric layer is less than ten nanometers, the floating gate and the control gate are made of N-type doped polysilicon, and the shallow trench isolation is filled with silicon dioxide. When a plurality of photosensitive detectors are arranged, deep trench isolation regions are arranged between adjacent detectors, and the deep trench isolation regions are filled with silicon dioxide and high-k materials.
The photoelectron modulation structure comprises a substrate electrode, a photoelectron modulation P + doped region and a photoelectron modulation electrode. The substrate electrode is positioned at the bottom of the substrate of the photosensitive detector, and particularly, the substrate electrode is arranged at the bottom of the substrate of the composite dielectric gate MOS capacitor. When a plurality of photosensitive detectors form an array, substrate electrodes of the whole array are connected, and voltages with the same magnitude are applied. As shown in fig. 8, an N-type source and a drain formed by ion implantation are formed on the surface of the substrate to form a floating gate transistor, and the periphery of the source and the drain are covered by P + doping to a depth not exceeding the shallow trench isolation depth to form a photoelectron modulation P + doping region. The surface of the photoelectron modulation P + doped region is provided with a photoelectron modulation electrode, when a plurality of photosensitive detectors form an array, one photosensitive detector is sacrificed for depositing the photoelectron modulation electrode every n (n is more than or equal to 1), the photoelectron modulation electrodes of the whole array are connected, and voltage with the same magnitude is applied. The substrate electrode and the photoelectron modulation electrode may be made of metal such as tungsten.
As shown in fig. 3, in the exposure process, a depletion region is formed on the surface of the MOS capacitor, and since the substrate is thick, the depletion region cannot extend to the bottom of the substrate, and therefore, an undepleted neutral region exists. According to the invention, through the graphs in fig. 2 and 9, the electrodes are deposited on the bottom of the substrate and the photoelectron modulation P + doping region, bias voltage is applied, the electric potential distribution is shown in fig. 4, and then an electric field pointing to the bottom of the substrate is formed in the substrate neutral region, so that photoelectrons generated in the region can be effectively collected to the depletion region and cannot be collected to an adjacent detector, and then the collection efficiency of the photoelectrons and the quantum efficiency of the device are improved, and the electric crosstalk is effectively inhibited. In fig. 3, the substrate is uniformly doped, and only the substrate electrode and the optoelectronic modulation electrode are used for applying voltage, so that an electric field with the surface pointing to the substrate is formed in the neutral region of the substrate. In order to further improve the photoelectron collection efficiency, the doping concentration can be gradually reduced from the bottom of the substrate to the surface of the substrate in the manner of fig. 6, and the concentration difference between the bottom and the surface is at least more than two orders of magnitude, so that a potential difference is formed based on the concentration difference, and the photoelectron collection efficiency can also be improved.
The working method of the photosensitive detector comprises the following steps:
(1) collection of photoelectrons: when the photosensitive detector senses light, positive voltage is applied to the control grid, negative voltage is applied to the bottom electrode of the substrate, negative voltage is applied to the photoelectron modulation electrode, the voltage of the photoelectron modulation electrode is larger than that of the substrate electrode, the depletion region is generated by the composite dielectric gate MOS capacitor, meanwhile, a vertical electric field is generated in the region where the capacitor is not depleted, the direction is from the surface of the MOS capacitor to the bottom of the substrate, and photo-generated electrons are collected below the composite dielectric gate MOS capacitor under the action of the electric field;
(2) readout amplification of photoelectrons: the source electrode of the composite dielectric gate MOSFET is grounded, the drain electrode is connected with a proper positive bias voltage, the voltage of the substrate electrode and the photoelectron modulation electrode is kept the same as the photoelectron collection state, a slope voltage is applied to the control gate, and the threshold value of the MOSFET is read;
(3) resetting of photoelectrons: and the control grid of the composite dielectric grid MOS capacitor is applied with negative bias, the substrate, the photoelectron modulation electrode and the source electrode of the composite dielectric grid MOSFET are grounded, and accumulated electrons are pumped away by the source electrode and the drain electrode after a certain time.
The invention realizes the collection of the photoelectrons of the P-type semiconductor substrate and the inhibition of the electrical crosstalk between adjacent detectors when the MOS capacitance is sensitive by controlling the electric field between the bottom of the P-type substrate and the photoelectron modulation P + doping region, thereby effectively improving the quantum efficiency and MTF of the photosensitive detector.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. The photosensitive detector based on the composite dielectric grid photoconduction comprises a composite dielectric grid MOS capacitor and a composite dielectric grid MOSFET part which are formed above the same P-type semiconductor substrate, and is characterized by further comprising a photoelectron modulation structure, wherein the photoelectron modulation structure comprises a substrate electrode, a photoelectron modulation P + doped region and a photoelectron modulation electrode; the substrate electrode is arranged at the bottom of the P-type semiconductor substrate; an N-type source electrode and a drain electrode are arranged on the surface of the substrate of the composite dielectric gate MOSFET part, and the photoelectron modulation P + doped region is arranged on the periphery of the N-type source electrode and the drain electrode; the photoelectron modulation electrode is positioned on the surface of the photoelectron modulation P + doped region.
2. The photoconductive photosensitive detector based on the composite dielectric gate of claim 1, wherein the composite dielectric gate MOS capacitor and the composite dielectric gate MOSFET partially share the composite dielectric gate and comprise a bottom dielectric layer, a floating gate, a top dielectric layer and a control gate from bottom to top.
3. The photosensitive detector based on composite dielectric gate photoconduction as claimed in claim 1, wherein a shallow trench isolation region is arranged between the composite dielectric gate MOS capacitor and the composite dielectric gate MOSFET part; the depth of the photoelectron modulation P + doped region does not exceed the depth of the shallow trench isolation region.
4. The photosensitive detector based on composite dielectric grid photoconduction as claimed in claim 1, wherein when a plurality of photosensitive detectors are arranged to form an array, the photoelectron modulation electrode is arranged every n photosensitive detectors, and n is more than or equal to 1.
5. The photoconductive photosensitive detector based on the composite dielectric grid as claimed in claim 1, wherein the P-type semiconductor substrate is doped with uniform concentration or gradient concentration.
6. The photoconductive photosensitive detector based on the composite dielectric grid as claimed in claim 5, wherein when the P-type semiconductor substrate is doped with gradient concentration, the doping concentration is gradually reduced from the bottom of the substrate to the surface of the substrate.
7. The composite dielectric gate photoconductive-based photosensitive detector as claimed in claim 1, wherein when a plurality of the photosensitive detectors are arranged, deep trench isolation regions are provided between adjacent detectors.
8. The photoconductive photosensitive detector based on composite dielectric gate of claim 1, wherein the substrate electrode is arranged at the bottom of the substrate of the composite dielectric gate MOS capacitor.
9. The photoconductive photosensitive detector based on the composite dielectric grid according to claim 1, wherein the substrate electrode is provided with a voltage applied less than the optoelectronic modulating electrode.
10. The method of claim 1, wherein the method comprises the steps of:
(1) collection of photoelectrons: when the photosensitive detector senses light, the control grid is applied with positive voltage, the substrate electrode is applied with negative voltage, the photoelectron modulation electrode is applied with negative voltage, and the magnitude of the negative voltage is larger than that of the substrate electrode; the composite dielectric gate MOS capacitor generates a depletion region, and meanwhile, an electric field in the vertical direction is generated in a region where the capacitor is not depleted, the direction of the electric field points to the bottom of the substrate from the surface of the composite dielectric gate MOS capacitor, and photo-generated electrons are collected below the composite dielectric gate MOS capacitor under the action of the electric field;
(2) readout amplification of photoelectrons: the source electrode of the composite dielectric gate MOSFET part is grounded, the drain electrode is connected with a positive bias voltage, the voltage of the substrate electrode and the photoelectron modulation electrode is kept the same as the photoelectron collection state, a slope voltage is applied to the control gate, and the threshold value of the composite dielectric gate MOSFET part is read;
(3) resetting of photoelectrons: the control grid of the composite dielectric grid MOS capacitor is applied with negative bias, the substrate electrode, the photoelectron modulation electrode and the source electrode of the composite dielectric grid MOSFET part are grounded, and accumulated electrons are pumped away by the source electrode and the drain electrode after a certain time.
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