CN114496808B - Flip-chip plastic package assembly method, shielding system, heat dissipation system and application - Google Patents
Flip-chip plastic package assembly method, shielding system, heat dissipation system and application Download PDFInfo
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- CN114496808B CN114496808B CN202210086531.1A CN202210086531A CN114496808B CN 114496808 B CN114496808 B CN 114496808B CN 202210086531 A CN202210086531 A CN 202210086531A CN 114496808 B CN114496808 B CN 114496808B
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- 239000004033 plastic Substances 0.000 title claims abstract description 140
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 239000004020 conductor Substances 0.000 claims abstract description 49
- 238000004806 packaging method and process Methods 0.000 claims description 35
- 238000009713 electroplating Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 18
- 238000007747 plating Methods 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
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- PQJKKINZCUWVKL-UHFFFAOYSA-N [Ni].[Cu].[Ag] Chemical compound [Ni].[Cu].[Ag] PQJKKINZCUWVKL-UHFFFAOYSA-N 0.000 claims description 3
- ZBTDWLVGWJNPQM-UHFFFAOYSA-N [Ni].[Cu].[Au] Chemical compound [Ni].[Cu].[Au] ZBTDWLVGWJNPQM-UHFFFAOYSA-N 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000007772 electroless plating Methods 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 2
- 238000004382 potting Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 16
- 230000008859 change Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 15
- 230000006870 function Effects 0.000 description 6
- 230000008054 signal transmission Effects 0.000 description 6
- 238000001816 cooling Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention provides an assembly method of flip-chip plastic package, a shielding system, a heat dissipation system and application of a plastic package device, belonging to the technical field of device package, and comprising the plastic package device and a system circuit board; the plastic package device comprises a medium substrate, a preset component arranged on the front surface of the medium substrate, a conductor, a plastic package layer and a back surface grounding pad arranged on the back surface of the medium substrate, wherein a device pin pad is arranged at the end part of the conductor, the front surface grounding pad is arranged on the surface of the plastic package layer, and the front surface of the plastic package device is welded on a system circuit board and is connected with a system heat dissipation structure. The assembling method of the flip-chip plastic package can realize the reverse buckling mode of the device to be assembled into a system circuit, change the heat conduction path and improve the heat dissipation effect of the device; the shielding effect of the device is improved, and the influence of the external electromagnetic environment on the inside of the device is reduced.
Description
Technical Field
The invention belongs to the technical field of device packaging, and particularly relates to an assembly method of flip-chip plastic packaging, a shielding system based on flip-chip plastic packaging, a heat dissipation system and application of a plastic packaging device.
Background
Flip chips, also known as Flip chips, are formed by depositing solder balls on I/O pads and then bonding the substrate with the melted solder balls by flipping the Chip over and heating. The traditional flip-chip mode is that the working face of the chip is connected with the substrate in a flip-chip mode, then circuit wiring is carried out on the substrate, passive devices are mounted on the substrate, and finally the chip is encapsulated, and the flip-chip packaging mode of the devices is the earliest rudiment of flip-chip bonding interconnection technology. Flip-Chip packaging is also based on Flip-Chip (Flip Chip) implementations.
In a traditional plastic package device, a plastic package material is covered above a chip inside the package, and the plastic package material has no shielding effect on electromagnetic signal conduction, so that the performance of the plastic package device is easily affected by external electromagnetic environment.
At present, flip chips are limited in that the chips must be Flip Chip technology, and Flip of devices cannot be realized based on forward mounted chips. Meanwhile, in the existing flip-chip technology, after packaging, the back of the chip is covered with packaging materials such as plastic packaging materials, so that the thermal conductivity is poor, and the heat dissipation requirement of devices with higher heat dissipation such as power amplifiers in plastic packaging devices cannot be met. Meanwhile, an underfill material is required to be added between the internal chip and the device heat dissipation structure, and the thermal conductivity is relatively low and is generally less than 10W/(m.K). The heat conduction path of the tube core is a heat of the chip, an underfill material, a dielectric substrate, a PCB through hole and a system heat dissipation structure, and the PCB through hole in the conduction path is a main limiting bottleneck for rapid heat transmission; the presence of low thermal conductivity materials or structures (PCB vias) in the heat conduction path results in poor heat dissipation from the chip.
Disclosure of Invention
The embodiment of the invention provides an assembling method of a flip-chip plastic package, a shielding system based on the flip-chip plastic package, a heat dissipation system and application of a plastic package device, which can realize that the device is assembled into a system circuit in a flip-chip manner, change a heat conduction path, improve the heat dissipation effect of the device, improve the shielding effect of the device and reduce the influence of an external electromagnetic environment on the inside of the device.
In order to achieve the above object, according to a first aspect of the present invention, a technical scheme is as follows: provided is an assembly method of flip-chip plastic package, the assembly method comprising:
assembling a preset component in a central bonding pad area on the front surface of the dielectric substrate;
conductors with preset heights are arranged on base pin bonding pads around the front face of the dielectric substrate, and the heights of the conductors are higher than those of the preset components;
front plastic packaging the preset components and parts, and enabling the conductor to be exposed out of the surface of the plastic packaging layer;
electroplating the surface of the front plastic package, electroplating a device pin pad corresponding to the end face of the conductor, and electroplating a front grounding pad in the central area to form a plastic package device; the front surface of the plastic package device is a front radio frequency transmission surface, the back surface of the plastic package device is a heat dissipation surface, and a back surface grounding pad for heat dissipation is arranged on the back surface of the dielectric substrate;
and reversely assembling the plastic package device on a system circuit board so that the front surface of the plastic package device is directly and electrically connected with the front surface of the system circuit board, and a back surface grounding pad on the back surface of the plastic package device is connected with a system heat dissipation structure.
With reference to the first aspect, in one possible implementation manner, the material of the dielectric substrate is any one of a PCB board, a ceramic substrate and a carrier board; the plate layer of the dielectric substrate is one or more layers.
With reference to the first aspect, in a possible implementation manner, the connection manner of the conductor includes SMT surface mount or conductive adhesive; the conductors may also be formed by electroplating metal posts or bonding wires of a predetermined height on the base lead pads.
With reference to the first aspect, in one possible implementation manner, the plastic packaging manner includes a mold glue filling manner or a spraying manner of a spraying device, and the material of the plastic packaging may be epoxy resin with or without filler substances.
With reference to the first aspect, in one possible implementation manner, the conductor may be directly encapsulated until the conductor is exposed, or the encapsulation height is higher than the conductor, and then the conductor is exposed by thinning.
With reference to the first aspect, in one possible implementation manner, the thinning may be any one of mechanical thinning, laser thinning or chemical thinning.
With reference to the first aspect, in one possible implementation manner, the surface after the front surface plastic packaging is electroplated, and the plating layer may be any one of copper-nickel-gold, copper-nickel-silver, nickel-palladium-gold, gold or copper; the plating method may be electroless plating or electrolytic plating.
In a second aspect, an embodiment of the present invention further provides a shielding system for flip-chip plastic package, based on the assembly method of flip-chip plastic package, including a front ground pad of the plastic package device, a back ground pad of the plastic package device, and a conductor encapsulated in the plastic package device, where the front ground pad, the back ground pad, and the conductor enclosed around form a shielding cavity of a preset component inside the plastic package device.
In a third aspect, an embodiment of the present invention further provides a heat dissipation system of a flip-chip plastic package, where the heat dissipation system is based on the assembly method of the flip-chip plastic package, and the heat dissipation system includes a dielectric substrate with a back ground pad and a system heat dissipation structure, and the heat of the preset component is directly conducted to the system heat dissipation structure through the back ground pad on the back of the dielectric substrate.
The embodiment of the invention provides an assembly method of flip-chip plastic package, which has the following beneficial effects compared with the prior art: the invention can realize the reversely buckled assembly of the plastic package device into the system circuit, and the radio frequency transmission surface and the radiating surface of the plastic package device are separated, namely, the front surface (plastic package electroplating surface) of the plastic package device is welded on the system circuit board to realize electric connection, and the periphery of the front surface of the device is connected to the grounding area of the system circuit board except for providing electric connection and radio frequency connection functions; the ground conductors on the back and the periphery of the dielectric substrate and the electroplating ground pad on the top of the device form a device shielding cavity together, so that the influence of the external electromagnetic environment on the interior of the device can be obviously reduced, and the signal transmission effect of the device can be improved; the back of the device (the back of the medium substrate) can be connected with a system heat dissipation structure to conduct heat generated by the device, and the realized heat conduction path is as follows: the heat generated by the components, namely the medium substrate and the system heat dissipation structure, is preset, the heat dissipation effect of the components is enhanced, and the signal transmission performance of the components and the service life of the components are improved.
Meanwhile, the flip-chip mode has lower requirements on the packaging form of the device, can be realized on the basis of a universal dielectric substrate, has lower requirements on the process of a chip, and does not need to use a flip-chip (flip chip) process.
In a fourth aspect, the embodiment of the invention also provides an application of the plastic package device, and the plastic package device is prepared based on the assembly method of the flip-chip plastic package and is flip-chip mounted on a system circuit board; and the back surface grounding pad of the plastic package device is connected with the system heat dissipation structure.
The invention provides an application of a plastic package device, wherein the plastic package device is reversely buckled and assembled to a system circuit. The back of the device (namely the back of the medium substrate) is directly connected to a system heat dissipation structure, so that the heat dissipation performance of the system is improved; the front surface grounding pad of the device (namely the front surface plating surface of the plastic package body) is connected to the grounding area of the system circuit board; pins except for providing electric connection and radio frequency connection functions on the front periphery of the device are connected to a grounding area of a system circuit board, and a grounding conductor on the back of the dielectric substrate, the periphery of the dielectric substrate and an electroplating grounding pad on the top of the device form a device shielding cavity together, so that the influence of an external electromagnetic environment on the interior of the device can be obviously reduced, and the effect of signal transmission of the device is improved.
Drawings
Fig. 1 is a schematic diagram of a front structure of a dielectric substrate according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a back structure of a dielectric substrate according to an embodiment of the present invention;
fig. 3 is a schematic side view of a dielectric substrate with a conductor disposed on a front surface of a base lead pad according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional structure of a dielectric substrate after plastic packaging according to an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional structure of a dielectric substrate after plastic package thinning according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a structure in which a partial plating layer is provided on a plastic layer after front surface plastic packaging according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a plastic package device in a system (arrows indicate heat dissipation directions) according to an embodiment of the present invention;
reference numerals illustrate:
1. a central pad region; 2. a base pin pad; 3. a dielectric substrate; 4. a back surface ground pad; 5. a conductor; 6. a front surface grounding pad; 7. a plastic sealing layer; 8. a device pin pad; 9. a system heat dissipation structure; 10. a system circuit board.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1 to 7, an assembling method of flip-chip plastic package according to the present invention will be described. The assembling method of the flip-chip plastic package comprises the following steps:
step one, as shown in fig. 1, a preset component is mounted on a central pad area 1 on the front surface of a dielectric substrate 3.
Wherein, preset components and parts include active component and/or passive component, and active component (active component) includes: chips (ICs), memory chips (memory), discrete components, etc.
The passive element (passive element) includes: capacitors, resistors, relays, oscillators, sensors, rectifier bridges, optocouplers, connectors, wafers, fuses, inductors, switches, diodes, transistors, etc. The preset components form a matching circuit with certain functions. The preset components are connected to the base pin pads 2 by conventional wire bonding or microstrip interconnection.
Step two, as shown in fig. 3, a conductor 5 with a preset height is arranged on the base pin pads 2 around the front surface of the dielectric substrate 3, and the height of the conductor 5 is higher than that of the preset component, so that the plastic package of the preset component is realized. Wherein the conductor 5 is perpendicular to the dielectric substrate 3.
Step three, as shown in fig. 4 and fig. 5, the preset components are molded on the front surface, and the conductor 5 is exposed out of the surface of the molding layer 7, so that the signal is led out. The conductors 5 may be exposed in a number of ways, the details of which are described below.
Step four, as shown in fig. 6, electroplating is performed on the surface of the front surface after plastic packaging, a device pin bonding pad 8 is electroplated on the end surface of the corresponding conductor 5, and a front surface grounding bonding pad 6 is electroplated in the central area to form a plastic packaging device; the front surface of the plastic package device is a front radio frequency transmission surface, the back surface of the plastic package device is a heat dissipation surface, and the back surface of the dielectric substrate 3 is provided with a back surface grounding pad 4 for heat dissipation. The plastic packaging and electroplating of the front preset components lead out signals from the front, and the back radiating surface of the plastic packaging device enables the radio frequency transmission surface of the plastic packaging device to be parallel to the radiating surface, so that mutual interference is avoided, and the radiating effect and shielding effect are improved.
Step five, as shown in fig. 7, the plastic package device is reversely assembled on the system circuit board, so that the front surface of the plastic package device is directly and electrically connected with the front surface of the system circuit board, and the back surface grounding pad 4 on the back surface of the plastic package device is connected with the system heat dissipation structure.
In this embodiment, the front ground pad 6 and a part of the ground pins in the device pin pad 8 are connected to the ground pad of the system circuit, providing a good grounding effect. The front face of the plastic package device is flip-chip welded to a system PCB board to realize electric connection; the back of the plastic package device is connected to the system heat dissipation structure, and finally, the separation of the device heat dissipation path and the radio frequency transmission and grounding path is realized, so that radio frequency signals are led out from the front of the system, the heat dissipation surfaces on the back are prevented from interfering with each other, and the heat dissipation effect and the shielding effect are improved.
Compared with the prior art, the flip-chip plastic package assembly method provided by the embodiment of the invention can realize that the plastic package device is reversely assembled into the system circuit, and the radio frequency transmission surface and the radiating surface of the plastic package device are separated, namely, the front surface (plastic package electroplating surface) of the plastic package device is welded to the system circuit board to realize electric connection, and the periphery of the front surface of the device is connected to the grounding area of the system circuit board except for providing electric connection and radio frequency connection functions; the back ground and peripheral ground conductors 5 of the dielectric substrate 3 and the electroplating ground pad at the top of the device form a device shielding cavity together, so that the influence of the external electromagnetic environment on the interior of the device can be obviously reduced, and the signal transmission effect of the device can be improved; the back of the device (the back of the medium substrate 3) can be connected with a system heat dissipation structure to conduct heat generated by the device, and the realized heat conduction path is as follows: the heat generated by the preset components, namely the medium substrate 3 and the system heat dissipation structure, can use high heat conduction materials such as copper (heat conductivity 390W/(m.K)) in the heat conduction path, enhances the heat dissipation effect of the device, has obvious advantages particularly in packaging the power device, and can further improve the signal transmission performance of the device and the service life of the device.
Meanwhile, the flip-chip mode has lower requirements on the packaging form of the device, can be realized based on the universal dielectric substrate 3, has lower requirements on the process of the chip, and does not need to use a flip-chip (flip chip) process.
As a specific implementation manner of the flip-chip plastic package assembly method provided in this embodiment, the material of the dielectric substrate 3 is any one of a PCB board, a ceramic substrate and a carrier board; the layer of the dielectric substrate 3 is one or more layers. Wherein, the carrier plate is a glass plate, a metal plate or a plastic plate.
For easy understanding, it is common that the substrate is a basic material for manufacturing PCBs, typically, the substrate is a copper clad laminate, and the single-sided and double-sided printed boards are manufactured by selectively performing hole processing, electroless copper plating, electrolytic copper plating, etching, and the like on a substrate material, i.e., a copper clad laminate (Copper Clad Laminate, CCL), to obtain a desired circuit pattern. Another type of multilayer printed board is also manufactured by using a thin copper clad laminate with an inner core as a substrate, and alternately laminating and bonding conductive pattern layers and prepregs (pregpregpregs) together at one time to form more than 3 layers of conductive pattern interlayer interconnection. It has the functions of conducting, insulating and supporting. The performance, quality, workability in manufacturing, manufacturing cost, manufacturing level, etc. of the printed board depend to a large extent on the substrate material.
As a specific implementation manner of the assembly method of the flip-chip plastic package provided in this embodiment, the connection manner of the conductor 5 includes SMT surface mount or conductive adhesive; the conductors 5 may also be formed by electroplating metal pillars or bonding wires of a predetermined height on the base lead pads 2. Wherein the conductor 5 forms an electrical connection with the base pin pad 2.
For easy understanding, it is common that SMT patches refer to short for serial process flows of processing on PCB basis, PCB (Printed Circuit Board) is a printed circuit board. SMT is a surface mount technology (surface mount technology) (Surface Mounted Technology abbreviation) and is one of the most popular technologies and techniques in the electronics assembly industry.
SMT is a surface mount technology (surface mount technology) (Surface Mounted Technology abbreviation) and is one of the most popular technologies and techniques in the electronics assembly industry. Electronic circuit surface mount technology (Surface Mount Technology, SMT) is known as surface mount or surface mount technology. The circuit mounting technology is to mount no-pin or short-lead surface assembly components (SMC/SMD, chinese called chip components) on the surface of a printed circuit board (Printed Circuit Board, PCB) or the surface of other substrates, and then solder the components by reflow soldering or dip soldering.
As a specific implementation manner of the assembly method of the flip-chip plastic package provided in this embodiment, the plastic package manner includes a mold glue filling manner or a spraying manner of a spraying device, and the plastic package material may be epoxy resin with or without filler material.
As a specific implementation manner of the flip-chip plastic package assembly method provided in this embodiment, the conductor 5 may be directly exposed by plastic package until the conductor 5 is exposed, or the plastic package layer is higher than the conductor 5, and then the conductor 5 is exposed by thinning.
As a specific implementation manner of the assembly method of the flip-chip plastic package provided in this embodiment, the thinning manner may be any one of mechanical thinning, laser thinning or chemical thinning.
As a specific implementation manner of the assembling method of the flip-chip plastic package provided in this embodiment, the surface after front plastic package is electroplated, and the plating layer may be any one of copper-nickel-gold, copper-nickel-silver, nickel-palladium-gold, gold or copper; the plating method may be electroless plating or electrolytic plating.
For easy understanding, it is common that electroplating is a process of plating a thin layer of other metal or alloy on the surface of some metals by using the principle of electrolysis, and a process of adhering a metal film on the surface of the metal or other material parts by using electrolysis, thereby playing roles of preventing oxidation (such as rust) of the metals, improving wear resistance, conductivity, reflectivity, corrosion resistance (copper sulfate, etc.), improving beauty, etc.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and in part, not described or illustrated in any particular embodiment, reference is made to the related descriptions of other embodiments.
Based on the same inventive concept, as shown in fig. 7, the embodiment of the invention also provides a shielding system of flip-chip plastic package, and an assembly method based on flip-chip plastic package, which comprises a front grounding pad 6 of a plastic package device, a back grounding pad 4 of the plastic package device and a conductor 5 encapsulated in the plastic package device, wherein the front grounding pad 6, the back grounding pad 4 and the conductor 5 surrounding the periphery form a shielding cavity of a preset component in the plastic package device, so that the influence of an external electromagnetic environment on the inside of the device can be obviously reduced.
Based on the same inventive concept, as shown in fig. 7, the embodiment of the invention also provides a heat dissipation system of flip-chip plastic package, and based on the assembly method of flip-chip plastic package, the heat dissipation system comprises a dielectric substrate 3 with a back surface grounding pad 4 and a system heat dissipation structure, wherein the heat of a preset component is directly conducted to the system heat dissipation structure through the back surface grounding pad 4 on the back surface of the dielectric substrate 3. The heat conduction path which can be realized by the assembly mode of the invention is as follows: the back of the device can be directly connected with the system heat dissipation structure, and the heat dissipation paths of the chip are made of high-heat-conductivity materials.
Based on the same inventive concept, the embodiment of the invention also provides an application of the plastic package device, which is prepared based on the assembly method of the flip-chip plastic package, as shown in fig. 7, the plastic package device is flip-chip mounted on a system circuit board; the plastic package device comprises a medium substrate 3, a preset component arranged on the front surface of the medium substrate 3, a conductor 5, a plastic package layer 7 and a back surface grounding pad 4 arranged on the back surface of the medium substrate 3, wherein a device pin pad 8 is arranged at the end part of the conductor 5, a front surface grounding pad 6 is arranged on the surface of the plastic package layer 7, the front surface of the plastic package device is welded on a system circuit board, and the back surface grounding pad 4 is connected with a system heat dissipation structure. The rear surface ground pad 4 is provided in the rear surface center region of the dielectric substrate 3, and faces the center pad region 1 in the front surface center region.
The system heat dissipation structure is exemplified as follows: example 1, a heat sink directly soldered to the backside ground pad 4; example 2, a radiator with cooling fins is connected, water cooling, oil cooling, air cooling or the like; other disclosed heat dissipation structures for plastic packaged devices.
Plastic packaged devices include, but are not limited to, various active or passive devices such as power amplifiers, filters, and the like.
The plastic package device provided by the invention is reversely buckled and assembled to a system circuit. The back of the device (namely the back of the medium substrate 3) is directly connected to a system heat dissipation structure, so that the heat dissipation performance of the system is improved; the front surface (namely the front surface plating surface of the plastic package) of the device is connected with the grounding area of the system circuit board through a front surface grounding pad 6; pins except for providing the functions of electric connection and radio frequency connection on the front periphery of the device are connected to the grounding area of the system circuit board, and the grounding conductor 5 on the back of the dielectric substrate 3 and the grounding pad on the periphery of the device are electroplated to form a device shielding cavity together, so that the influence of the external electromagnetic environment on the inside of the device can be obviously reduced, and the effect of signal transmission of the device is improved.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (9)
1. The utility model provides an assembly method of flip-chip plastic packaging, can be used to prepare the shielding system of flip-chip plastic packaging encapsulation, shielding system includes the front ground connection pad (6) of plastic packaging device, the back ground connection pad (4) of plastic packaging device and plastic packaging in conductor (5) in the plastic packaging device, front ground connection pad (6), back ground connection pad (4) and enclose locate all around conductor (5) constitute the shielding chamber of the inside preset components and parts of plastic packaging device, its characterized in that, assembly method includes:
a preset component is assembled in a central bonding pad area (1) on the front surface of a dielectric substrate (3);
a conductor (5) with a preset height is arranged on a base pin bonding pad (2) around the front surface of a dielectric substrate (3), and the height of the conductor (5) is higher than that of a preset component;
the preset components are subjected to plastic packaging on the front surface, and the conductor (5) is exposed out of the surface of the plastic packaging layer (7);
electroplating the surface of the front plastic package, electroplating a device pin pad (8) corresponding to the end face of the conductor (5), and electroplating a front grounding pad (6) in the central area to form a plastic package device; the front surface of the plastic package device is a front radio frequency transmission surface, the back surface of the plastic package device is a heat dissipation surface, and a back surface grounding pad (4) for heat dissipation is arranged on the back surface of the dielectric substrate (3);
and reversely assembling the plastic package device on a system circuit board (10) so that the front surface of the plastic package device is directly and electrically connected with the front surface of the system circuit board, and the back surface grounding pad (4) on the back surface of the plastic package device is connected with a system heat dissipation structure (9).
2. The assembly method of the flip-chip plastic package according to claim 1, wherein the material of the dielectric substrate (3) is any one of a PCB board, a ceramic substrate and a carrier board; the layer of the dielectric substrate (3) is one or more layers.
3. The method of assembling a flip-chip package according to claim 1, wherein the connection means of the conductors (5) comprise SMT surface mount or conductive adhesive; the conductors (5) may also be formed for plating out metal pillars or bonding wires of a predetermined height on the base lead pads (2).
4. The method of assembling a flip-chip package according to claim 1, wherein the package comprises a mold potting or a spraying process, and the material of the package can be epoxy resin with or without filler.
5. The method for assembling the flip-chip plastic package according to claim 1, wherein the conductor (5) is exposed, and the method can be used for directly plastic packaging until the conductor (5) is exposed, or the plastic packaging height is higher than the height of the conductor (5), and then the conductor (5) is exposed by thinning.
6. The method of assembling a flip chip package of claim 5, wherein the thinning is any of mechanical thinning, laser thinning or chemical thinning.
7. The method for assembling a flip-chip plastic package according to claim 1, wherein the surface after the front surface plastic package is electroplated, and the plating layer can be any one of copper-nickel-gold, copper-nickel-silver, nickel-palladium-gold, gold or copper; the plating method may be electroless plating or electrolytic plating.
8. A heat dissipation system of a flip-chip plastic package, characterized in that the assembly method based on the flip-chip plastic package of any one of claims 1-7 comprises a dielectric substrate (3) with a back ground pad (4) and a system heat dissipation structure, wherein heat of the preset component is directly conducted to the system heat dissipation structure (9) through the back ground pad (4) on the back of the dielectric substrate (3).
9. Use of a plastic packaged device, characterized in that it is manufactured on the basis of the assembly method of flip-chip plastic packaging according to any one of claims 1-7, said plastic packaged device being flip-chip mounted on a system circuit board (10); the back surface grounding pad (4) of the plastic package device is connected with the system heat dissipation structure (9).
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| CN202210086531.1A CN114496808B (en) | 2022-01-25 | 2022-01-25 | Flip-chip plastic package assembly method, shielding system, heat dissipation system and application |
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