CN114488718A - Extreme ultraviolet exposure method based on negative photoresist - Google Patents
Extreme ultraviolet exposure method based on negative photoresist Download PDFInfo
- Publication number
- CN114488718A CN114488718A CN202210160748.2A CN202210160748A CN114488718A CN 114488718 A CN114488718 A CN 114488718A CN 202210160748 A CN202210160748 A CN 202210160748A CN 114488718 A CN114488718 A CN 114488718A
- Authority
- CN
- China
- Prior art keywords
- exposure
- wafer substrate
- negative photoresist
- extreme ultraviolet
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 50
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000004528 spin coating Methods 0.000 claims abstract description 8
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract description 3
- 238000000576 coating method Methods 0.000 claims abstract description 3
- 230000001133 acceleration Effects 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 2
- 230000001186 cumulative effect Effects 0.000 claims 2
- 238000007664 blowing Methods 0.000 claims 1
- 238000002791 soaking Methods 0.000 abstract description 4
- 238000001035 drying Methods 0.000 abstract description 2
- 239000003292 glue Substances 0.000 description 13
- 238000011161 development Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000006552 photochemical reaction Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a method based on negative photoresist extreme ultraviolet exposure, which comprises the following steps of 1) uniformly coating a negative photoresist on a wafer substrate in a manner of spin coating, baking and removing edge residual photoresist in a super-clean room yellow region, and attaching a special hard mask to the surface of the wafer substrate; 2) placing the prepared wafer substrate in an extreme ultraviolet exposure device, and achieving the exposure dose required by the negative photoresist by accumulating the exposure time; 3) and (3) baking the exposed wafer substrate in a yellow light area, developing in propylene glycol monomethyl ether acetate and isopropanol solution in an alternate soaking mode, finally rinsing the developed sample in clean isopropanol, and drying by using nitrogen. Whether the exposure is sufficient or not is observed under a microscope, and whether the overexposure phenomenon exists or not is observed.
Description
Technical Field
The invention relates to an extreme ultraviolet exposure method based on negative photoresist. Belongs to the technical field of semiconductors, and particularly relates to the technical field of extreme ultraviolet photoresist.
Background
The photoresist is a main tool for pattern transfer, and is a very important basic material in the photoetching process, and the photoresist transfers a mask pattern to a target wafer substrate through steps of spin coating, exposure, development, etching, stripping and the like. The exposed areas of the negative photoresist release free radicals generated by the photosensitizer to form crosslinks between rubber molecules, thereby becoming insoluble in the developer. With the continuous advance of moore's law, the size process of integrated circuits is continuously reduced, the existing extreme ultraviolet lithography is the necessary way for the process below the 7nm technology of integrated circuits, and the corresponding extreme ultraviolet photoresist needs to meet the requirements of high sensitivity, high resolution and low edge roughness. But is currently in the research and pilot production phase with respect to euv photoresists.
At present, the development direction of the extreme ultraviolet photoresist mainly comprises molecular glass photoresist which is amorphous molecular resist and has the advantages of small molecular size and no molecular mass distribution compared with polymer photoresist. The method can effectively solve the problem of large roughness caused by uneven distribution of the polymer photoresist. Another direction of development is metal/metal oxide free polymer photoresists that provide excellent resolution, image quality and etch resistance, as well as high contrast and sensitivity. Although the extreme ultraviolet photoresist has the characteristics of small feature size, low exposure dose and low roughness, the extreme ultraviolet photoresist has the following defects:
1. since polymer and molecular glass photoresists are expensive in the market and very expensive in development cost.
2. The molecular glass photoresist has almost gradually increased roughness along with the reduction of the characteristic dimension of the pattern, the phenomenon of pattern collapse occurs, the compatibility of a polymer matrix is poor, and the photochemical reaction is not uniform in the exposure/postbaking process, so that the resolution of the pattern is reduced.
Therefore, it is necessary to develop a low-cost and highly stable method for exposing an extreme ultraviolet photoresist.
Disclosure of Invention
The invention aims to provide a method for carrying out exposure by extreme ultraviolet light based on negative photoresist as a mask.
In order to achieve the purpose, the technical scheme of the invention is that the extreme ultraviolet exposure method based on the negative photoresist comprises the following steps:
step one, uniformly coating negative photoresist on a wafer substrate in a manner of spin coating, baking and removing edge residual photoresist in a super-clean room yellow region, and attaching a special hard mask plate on the surface of the wafer substrate;
placing the prepared wafer substrate in an extreme ultraviolet exposure device, and achieving the exposure dose required by the negative photoresist by accumulating the exposure time;
and step three, baking the exposed wafer substrate in a yellow light area, then developing in propylene glycol monomethyl ether acetate and isopropanol solution in an alternate soaking mode, finally rinsing the developed sample in clean isopropanol, and drying by using nitrogen.
In the described method for extreme ultraviolet exposure of negative photoresist, the basic method for leveling photoresist on a wafer substrate is described. In the process of spin coating, the negative photoresist is rotated at 1000 rpm for 10 seconds, wherein the acceleration is 200 rpm, and then rotated at 3000 rpm for 30 seconds, wherein the acceleration is 400 rpm, and the thickness of the negative photoresist obtained after spin coating is about 1 micron.
The accumulated exposure time depends on the exposure dose required by the negative photoresist and the energy of the extreme ultraviolet light, and the dose required by the exposure of the negative photoresist is achieved by calculating the accumulated exposure time.
In the developing process, the substrate is developed in an alternate soaking mode in propylene glycol methyl ether acetate and isopropanol solution, the developing time is about 1 minute, the propylene glycol methyl ether acetate is rinsed in clean isopropanol after no floccule floats out on the surface of the wafer substrate, then the substrate is dried by nitrogen, and the substrate is used for observing the substrate by a microscope to determine whether a pattern left by a hard mask appears.
The invention has the beneficial effects that: placing the prepared wafer substrate in an extreme ultraviolet exposure device, adopting a hard mask, and calculating the accumulated required exposure time according to the exposure energy and the exposure dose required by the negative photoresist; the exposed wafer substrate is firstly baked in a yellow region, then developed in a developing solution, and whether the exposure is sufficient or not is observed under a microscope, and whether the overexposure phenomenon exists or not is easy to obtain accurate exposure. The negative photoresist has low production cost and high stability of an exposure pattern, and can successfully realize the transfer of a mask pattern by meeting the requirement of photochemical reaction under the extreme ultraviolet condition.
Drawings
FIG. 1 is a schematic illustration of an exposure process according to one embodiment of the present invention;
FIG. 2 is a schematic illustration of a pattern transfer achieved after development according to one embodiment of the present invention;
FIG. 3 shows the micro-pattern of the negative-photoresist coated silicon wafer substrate after exposure and development
Fig. 1 includes: 11-extreme ultraviolet light, 12-reflector, 13-mask, 14-negative glue coated on a silicon wafer, 15-silicon wafer substrate, and 16-negative glue of a light-transmitting part of a mask pattern and a part of the extreme ultraviolet light which are subjected to chemical reaction.
Fig. 2 includes: 21-the opaque part in the mask, 22-the transparent character part in the mask, 23-the developed silicon chip substrate, 24-the negative glue pattern remained after the development by the chemical reaction with the extreme ultraviolet light.
The specific implementation mode is as follows:
s1, placing the wafer substrate which is cleaned in advance on a glue homogenizing table in a yellow light area;
s2, dripping the negative photoresist on the wafer substrate by a static glue dripping mode, or carrying out dynamic glue dripping when the glue homogenizing table rotates at a low speed;
s3, in the glue homogenizing process, firstly rotating for 10 seconds at 1000 rpm, wherein the acceleration is 200 rpm, then rotating for 30 seconds at 3000 rpm, wherein the acceleration is 400 rpm, and the thickness of the negative glue obtained after glue homogenizing is about 1 micron;
s4, placing the wafer substrate after glue homogenizing on a heating table for baking, wherein the baking parameters are 95 ℃ and 1 minute;
s5, after baking, attaching a special hard mask (adopting a molybdenum plate with the thickness of 1.5-2.5mm, especially preparing a light-transmitting pattern on the molybdenum mask with the thickness of 2mm, and making the part without the pattern opaque) on the surface of the wafer substrate;
s6, placing the wafer substrate in an exposure device, calculating accurate exposure time according to the exposure dose required by the negative photoresist and the energy of the extreme ultraviolet light source, and exposing;
s7, taking out the exposed sample, placing the sample on a heating table, and post-baking at 95 ℃ for 2 minutes;
and S8, developing in a mode of alternately soaking in beakers filled with propylene glycol methyl ether acetate solution and isopropanol solution respectively, wherein the developing time is about 1 minute, the propylene glycol methyl ether acetate is rinsed in clean isopropanol after no floccule floats on the surface of the wafer substrate, then the wafer substrate is dried by nitrogen, and the wafer substrate is used for observing the substrate by a microscope to determine whether a pattern left by a hard mask appears.
The method uses negative photoresist to carry out down-line exposure under the condition of extreme ultraviolet light, and coats the negative photoresist on the surface of the substrate in a photoresist homogenizing and baking mode. The thickness of the negative glue is measured by a step meter to be about 1-2 microns, so that the negative glue is easy to be absorbed by an extreme ultraviolet light source to generate chemical reaction, and the exposed effect is achieved. The pattern of the mask plate covered on the surface of the substrate is transferred to a sample by accumulating the exposure time, and the exposure of the negative adhesive under an extreme ultraviolet light source is realized by observing whether the exposure pattern on the surface of the substrate is consistent with the pattern of the hard mask plate under a microscope.
The process of the present invention is further illustrated by reference to the following specific examples.
In one embodiment of the present invention, pattern transfer with exposure resolution of 40 microns was successfully achieved in an extreme ultraviolet light source system by using SU8-2000.5 negative photoresist as a mask.
FIG. 1 is a schematic illustration of a negative-tone coated substrate in an exposure system, with a resist thickness of about 1-2 microns being applied to the surface of a silicon wafer sample. In the exposure system tested, an exposure wavelength of 46.8nm and an extreme ultraviolet intensity of 4X 10 were used-7mJ/cm2The exposure dose required by the negative photoresist is about 100mJ/cm2The exposure time was set to 72 hours according to the calculation. When the extreme ultraviolet light passes through the light-transmitting part on the mask plate and chemically reacts with the negative photoresist on the substrate, the extreme ultraviolet light is not easy to dissolve in the developing solution.
FIG. 2 is a schematic diagram of the reaction between the pattern of the EUV light-transmissive mask of FIG. 1 and the negative photoresist on the silicon wafer substrate, wherein the exposed negative photoresist undergoes a chemical reaction and is retained after development, and the unexposed portion is removed by a developer.
Fig. 3 is a micrograph of the sample of fig. 2 converted to the result of exposure. After development, a pattern JU character appears on the silicon wafer substrate, and the overall exposure effect is good.
The above embodiments are only examples of the present invention, but the present invention is not limited thereto, and any changes, modifications, substitutions, combinations, and simplifications made without departing from the spirit and principle of the present invention should be construed as equivalents and all fall within the protection scope of the present invention.
Claims (5)
1. A method for exposing a negative photoresist based on extreme ultraviolet light is characterized by comprising the following steps:
step one, uniformly coating negative photoresist on a wafer substrate in a manner of spin coating, baking and removing edge residual photoresist in a super-clean room yellow region, and attaching a special hard mask plate on the surface of the wafer substrate;
step two, placing the prepared wafer substrate in an extreme ultraviolet exposure device, and calculating the accumulated exposure time according to the exposure energy and the exposure dose required by the negative photoresist;
and step three, carrying out post-baking on the exposed wafer substrate in a yellow region, then developing in a developing solution, and observing whether the exposure is sufficient or not under a microscope to determine whether an overexposure phenomenon exists or not.
2. The method of claim 1, wherein the negative photoresist is dropped onto the wafer substrate by static dropping or dynamic dropping is performed while the spin stand is rotating at a low speed; in the process of spin coating, the negative photoresist is rotated at 1000 rpm for 10 seconds, wherein the acceleration is 200 rpm, and then rotated at 3000 rpm for 30 seconds, wherein the acceleration is 400 rpm, and the thickness of the negative photoresist obtained after spin coating is 1 micron.
3. The method for exposing an extreme ultraviolet light to a negative film according to claim 1 or 2, wherein the cumulative exposure time is determined by calculating the cumulative exposure time to achieve the required exposure dose of the negative film, depending on the required exposure dose of the negative film and the energy of the extreme ultraviolet light.
4. The method of claim 3, wherein the developing process comprises alternately immersing the substrate in the solutions of propylene glycol methyl ether acetate and isopropyl alcohol for about 1 minute, rinsing the substrate in clean isopropyl alcohol after no floc is formed on the surface of the wafer substrate, and blowing the substrate with nitrogen to dry the substrate, so that the substrate can be observed under a microscope to see whether the pattern left by the hard mask appears.
5. The method for exposing the negative photoresist to extreme ultraviolet light as recited in claim 1 or 2, wherein the wafer substrate after the photoresist is homogenized is placed on a heating stage to be baked, wherein the baking parameters are 95 ℃ for 1 minute; after baking, preparing a light-transmitting pattern on a 2mm molybdenum mask plate and attaching the light-transmitting pattern to the surface of the wafer substrate; and placing the wafer substrate in an exposure device for exposure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210160748.2A CN114488718A (en) | 2022-02-22 | 2022-02-22 | Extreme ultraviolet exposure method based on negative photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210160748.2A CN114488718A (en) | 2022-02-22 | 2022-02-22 | Extreme ultraviolet exposure method based on negative photoresist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114488718A true CN114488718A (en) | 2022-05-13 |
Family
ID=81482871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210160748.2A Withdrawn CN114488718A (en) | 2022-02-22 | 2022-02-22 | Extreme ultraviolet exposure method based on negative photoresist |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114488718A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204281A (en) * | 2016-03-18 | 2017-09-26 | 台湾积体电路制造股份有限公司 | Material compositions and its method |
| CN110575852A (en) * | 2019-07-25 | 2019-12-17 | 浙江大学 | Multi-digital RPA micro-fluidic chip integrating sample pretreatment |
| CN111714931A (en) * | 2020-06-28 | 2020-09-29 | 清华大学深圳国际研究生院 | Transmission type solid phase micro extraction micro-fluidic device and manufacturing method thereof |
| CN113440726A (en) * | 2021-01-26 | 2021-09-28 | 南方科技大学 | Achiral magnetic control micro-bracket robot and preparation method and application thereof |
| CN113663747A (en) * | 2021-07-30 | 2021-11-19 | 浙大城市学院 | High-dynamic-range multiple digital PCR chip and preparation method thereof |
| CN113835313A (en) * | 2021-11-10 | 2021-12-24 | 南京大学 | Extreme ultraviolet lithography exposure method based on higher harmonics |
-
2022
- 2022-02-22 CN CN202210160748.2A patent/CN114488718A/en not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204281A (en) * | 2016-03-18 | 2017-09-26 | 台湾积体电路制造股份有限公司 | Material compositions and its method |
| CN110575852A (en) * | 2019-07-25 | 2019-12-17 | 浙江大学 | Multi-digital RPA micro-fluidic chip integrating sample pretreatment |
| CN111714931A (en) * | 2020-06-28 | 2020-09-29 | 清华大学深圳国际研究生院 | Transmission type solid phase micro extraction micro-fluidic device and manufacturing method thereof |
| CN113440726A (en) * | 2021-01-26 | 2021-09-28 | 南方科技大学 | Achiral magnetic control micro-bracket robot and preparation method and application thereof |
| CN113663747A (en) * | 2021-07-30 | 2021-11-19 | 浙大城市学院 | High-dynamic-range multiple digital PCR chip and preparation method thereof |
| CN113835313A (en) * | 2021-11-10 | 2021-12-24 | 南京大学 | Extreme ultraviolet lithography exposure method based on higher harmonics |
Non-Patent Citations (1)
| Title |
|---|
| 刘洋 等: "用于抗菌药物敏感实验的倍比稀释微流控芯片", 《MEMS与传感器》, vol. 56, no. 04, 30 April 2019 (2019-04-30), pages 279 - 284 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20100311244A1 (en) | Double-exposure method | |
| JP2004212967A (en) | Overcoating composition for photoresist and photoresist pattern forming method utilizing the same | |
| KR20010015280A (en) | A method of forming a photoresist pattern | |
| CN111948904A (en) | Photoresist composition, method for forming photolithographic pattern using the same, and use thereof | |
| CN113126428A (en) | Nano-imprinting method | |
| JP4531726B2 (en) | Method for forming miniaturized resist pattern | |
| US20100279228A1 (en) | Organo-metallic hybrid materials for micro- and nanofabrication | |
| JP3475314B2 (en) | Method of forming resist pattern | |
| JPS63187237A (en) | Formation of patterned resist image | |
| CN114488718A (en) | Extreme ultraviolet exposure method based on negative photoresist | |
| KR100512544B1 (en) | Method for developing, method for forming pattern, and method for fabricating photomask or semiconductor device using the same | |
| CN115373215A (en) | Method for preparing film mask plate by adopting photoetching method and application thereof | |
| JP3304250B2 (en) | Method for curing photosensitive resin composition | |
| JP2002006478A (en) | Mask for exposure and method for producing the same | |
| CN109503752A (en) | A kind of low diffusion ArF photoresist polymer photosensitizer PAG and its application | |
| JPH0334053B2 (en) | ||
| US20220260916A1 (en) | Dual developing method for defining different resist patterns | |
| JP3725385B2 (en) | Method for forming resist pattern | |
| JPH10123693A (en) | Method of forming pattern of photosensitive organic film, and method of forming photomask pattern | |
| JP2538935B2 (en) | Resist development method | |
| KR20220064438A (en) | Positive photoresist composition and photolithography method using thereof | |
| JPS62269136A (en) | Radiation sensitive material | |
| JPS61241745A (en) | Negative type photoresist composition and formation of resist pattern | |
| CN117761978A (en) | High-resolution optical coating film graphical processing technology | |
| CN116256945A (en) | Photoresist material and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20220513 |