CN114488683A

CN114488683A - Method for generating mask pattern, device for generating mask pattern and electronic equipment

Info

Publication number: CN114488683A
Application number: CN202210035463.6A
Authority: CN
Inventors: 王航宇
Original assignee: Shenzhen Jingyuan Information Technology Co Ltd
Current assignee: Shenzhen Jingyuan Information Technology Co Ltd
Priority date: 2022-01-12
Filing date: 2022-01-12
Publication date: 2022-05-13

Abstract

The invention relates to the field of integrated circuit mask design, in particular to a method for generating a mask pattern, a device for generating the mask pattern and electronic equipment, wherein the method comprises the following steps: providing an initial mask layout of one or more initial mask patterns, and establishing an initial position information matrix based on coordinate information corresponding to each initial mask pattern to calibrate each initial mask pattern; selecting mask patterns to be corrected, providing correction rules about each mask pattern to be corrected, and associating each correction rule with the initial position information matrix to match the correction rule to the mask pattern to be corrected at the corresponding position information; correcting the initial mask layout by applying a matched correction rule based on the position information of the mask pattern to be corrected; the corrected mask layout is output, the initial mask graph correction speed is high through the method, the mask graph to be corrected is accurately found, and the mask layout obtained after correction has a wide process window.

Description

Method for generating mask pattern, device for generating mask pattern and electronic equipment

[ technical field ] A method for producing a semiconductor device

The present invention relates to the field of integrated circuit mask design, and more particularly, to a method for generating a mask pattern, an apparatus for generating a mask pattern, and an electronic device.

[ background of the invention ]

In the production and manufacturing process of the photoetching semiconductor device, a photoetching model establishing stage or an exposure imaging stage needs to use a mask plate provided with a mask pattern. Whether a reticle is used during the lithography modeling stage or the exposure imaging stage, the size of the process window is determined by the quality of the specific mask pattern design. The final mask used in the lithography model building or exposure imaging usually designs an initial mask layout, and then corrects the upper mask pattern, especially the mask pattern at the edge, to increase the process window, so as to meet the final design requirement. However, since the number of mask patterns on the mask is relatively large, and the relative position cannot be calibrated well, it is difficult to specify a specific mask pattern for correction, and particularly, it is difficult to find the same mask pattern again for correction after the initial movement, which is particularly disadvantageous for correcting the mask.

[ summary of the invention ]

In order to overcome the defect that the mask pattern which needs to be corrected is difficult to find in the process of providing the mask pattern at present, the invention provides a method for generating the mask pattern, a device for generating the mask pattern and electronic equipment.

In order to solve the above technical problems, the present invention provides a technical solution: a method for generating a mask pattern, comprising the steps of: providing an initial mask layout, wherein the initial mask layout comprises one or more initial mask patterns, the initial mask patterns are periodically or regularly arranged, and each initial mask pattern has corresponding coordinate information; establishing an initial position information matrix related to each initial mask pattern based on the coordinate information corresponding to each initial mask pattern, and calibrating each initial mask pattern by using the initial position information matrix; selecting part or all of the initial mask patterns as mask patterns to be corrected, providing correction rules about each mask pattern to be corrected, and associating each correction rule with the initial position information matrix to match the correction rule to the mask pattern to be corrected at the corresponding position information; correcting the initial mask layout by applying a matched correction rule based on the position information of the mask pattern to be corrected; and outputting the corrected mask layout.

Preferably, associating each correction rule with the initial position information matrix to match a correction rule to the mask pattern to be corrected at the corresponding position information comprises the following steps: and establishing an operation matrix with the same size as the initial position information matrix, wherein the content of the element under the same position in the operation matrix is a correction rule of the mask pattern to be corrected.

Preferably, the correction rule includes a correction mode and correction content related to the corresponding correction mode, the correction mode includes one or more of movement of a mask pattern edge to be corrected, overall movement of a mask pattern to be corrected, and addition of a sub-resolution auxiliary pattern to the mask pattern to be corrected, and the correction content in the corresponding correction mode includes a movement direction and a movement value, and added sub-resolution auxiliary position information and size information.

Preferably, the step of establishing an operation matrix with the same size as the initial position information matrix, wherein the modification rule that the elements in the operation matrix under the same position are the mask pattern to be modified includes the following steps: establishing an operation matrix with the same size as the initial position information matrix; setting the corresponding correction mode into the operation matrix element at the corresponding position; and adding the corresponding correction content to the corresponding correction mode.

Preferably, the specific operation of adding the corresponding correction content to the corresponding correction mode is as follows: and sequentially adding the elements to the center of the matrix according to the initial position information matrix and by taking the edge elements of the matrix as a reference.

Preferably, the initial mask patterns are regular patterns and have center points, and an initial position information matrix about each initial mask pattern is established based on the corresponding center coordinates of the initial mask pattern.

Preferably, the initial mask pattern relatively close to the edge element in the initial mask pattern is selected as the mask pattern to be corrected.

Preferably, when one mask pattern to be corrected includes a plurality of correction manners and a plurality of correction contents, all the correction manners and the corresponding correction contents are stored in one position element of the operation matrix corresponding to the mask pattern to be corrected.

In order to solve the above technical problem, the present invention further provides an apparatus for generating a mask pattern, which includes a setting module: providing an initial mask layout, wherein the initial mask layout comprises one or more initial mask patterns, and each initial mask pattern has corresponding coordinate information; a position information matrix establishing module: the initial position information matrix is used for establishing an initial position information matrix related to each initial mask pattern based on the coordinate information corresponding to each initial mask pattern, and each initial mask pattern is calibrated by using the initial position information matrix; a correlation module: selecting part or all of the initial mask patterns as mask patterns to be corrected, providing correction rules about each mask pattern to be corrected, and associating each correction rule with the initial position information matrix to match the correction rule to the mask pattern to be corrected at the corresponding position information; a correction execution module: correcting the initial mask layout by applying a matched correction rule based on the position information of the mask pattern to be corrected; an output module: and outputting the corrected mask layout.

In order to solve the above technical problem, the present invention also provides an electronic device comprising one or more processors and a storage means for storing one or more programs which, when executed by the one or more processors, cause the one or more processors to implement the method applied to generate a mask pattern as described above.

Compared with the prior art, the technical scheme provided by the invention has the following beneficial effects:

1. establishing an initial position information matrix related to each initial mask pattern based on coordinate information corresponding to each initial mask pattern, wherein after the initial position information matrix is established and calibrated, the position of each initial mask pattern in the initial position information matrix is always unchanged no matter what correction operation is performed on the initial mask pattern corresponding to any position of the matrix, each correction rule is associated with the initial position information matrix to match the correction rule to the mask pattern to be corrected at the corresponding position information, so that the correction rule can be always associated with the mask pattern to be corrected at the corresponding initial position information matrix when the correction operation is performed on the mask pattern to be corrected, and when the selected mask pattern to be corrected is corrected, the corresponding mask pattern to be corrected can be quickly aligned without traversing all the initial mask patterns, the method can well accelerate the searching speed and avoid errors in the searching process, thereby improving the correcting speed and the correcting accuracy.

2. The correction rule and the mask pattern to be corrected at the corresponding position are corrected by establishing an operation matrix with the same size as the initial position information matrix, the operation mode is simple, the correspondence is convenient, and the correction of the mask pattern to be corrected is convenient.

3. When the correction content is added, the correction content is sequentially added to the elements in the center of the matrix according to the initial position information matrix and by taking the edge elements of the matrix as a reference, so that the adding accuracy can be improved, and errors or missing addition in the adding process can be avoided.

4. And establishing an initial position information matrix related to each initial mask pattern based on the corresponding center coordinates of each initial mask pattern, so that the initial position information matrix can be better applied to the initial mask patterns with different shapes.

5. The apparatus for generating a mask pattern and the electronic device provided by the invention have the same beneficial effects as the method for generating a mask pattern.

[ description of the drawings ]

FIG. 1 is a flow chart illustrating a method for generating a mask pattern according to a first embodiment of the present invention;

FIG. 2A is a schematic view of a single initial mask pattern arranged along the Y direction;

FIG. 2B is a schematic view of a single initial mask pattern arranged along the X direction;

FIG. 2C is a schematic view showing a plurality of initial mask patterns regularly arranged along the Y direction;

FIG. 2D is a schematic diagram of a plurality of initial mask patterns regularly arranged along the X-direction;

FIG. 3A is a schematic diagram of a plurality of initial mask patterns regularly arranged along the X-direction and the Y-direction;

FIG. 3B is a schematic diagram of a plurality of initial mask patterns arranged alternately along the X-direction and the Y-direction;

FIG. 3C is a schematic diagram of a plurality of initial mask patterns arranged in a diagonal direction;

FIG. 4A is another schematic view of a plurality of initial mask patterns alternately arranged along the X-direction and the Y-direction;

FIG. 4B is a schematic diagram of an initial position information matrix created corresponding to the initial mask pattern arrangement of FIG. 4A;

FIG. 5A is a schematic view of a plurality of initial mask patterns alternately arranged along the X-direction and the Y-direction;

FIG. 5B is a schematic diagram of the mask pattern to be corrected in FIG. 5A after correction;

FIG. 6 is a schematic diagram of an operation matrix established corresponding to the initial mask pattern of FIG. 4B;

fig. 7 is a detailed flowchart of step S3;

FIG. 8A is a schematic diagram of an initial mask pattern arrangement provided;

FIG. 8B is a schematic diagram of the initial position information matrix established for FIG. 8A;

FIG. 8C is a schematic diagram of an operation matrix established for a mask pattern to be corrected at a corresponding position requiring correction based on a set correction rule;

FIG. 8D is a schematic diagram after the initial mask pattern of FIG. 8A is corrected based on the set correction rules;

FIG. 9 is a block diagram of an apparatus for generating a mask pattern according to a second embodiment of the present invention;

fig. 10 is a block schematic diagram of an electronic device provided in a third embodiment of the invention;

FIG. 11 is a schematic block diagram of a computer system suitable for use with a server implementing an embodiment of the invention.

[ detailed description ] embodiments

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

Referring to fig. 1, a first embodiment of the present invention provides a method for generating a mask pattern, where the generated mask pattern constitutes a mask layout, and the mask layout is used as a test mask during a lithography model building process or as an imaging mask during an exposure imaging stage. The method for generating the mask pattern comprises the following steps:

s1, providing an initial mask layout, wherein the initial mask layout comprises one or more initial mask patterns, the initial mask patterns are periodically or regularly arranged, and each initial mask pattern has corresponding coordinate information;

s2, establishing an initial position information matrix related to each initial mask pattern based on the coordinate information corresponding to each initial mask pattern, and calibrating each initial mask pattern by using the initial position information matrix;

s3, selecting part or all of the initial mask patterns as mask patterns to be corrected, providing correction rules about each mask pattern to be corrected, and associating each correction rule with the initial position information matrix to match the correction rule to the mask pattern to be corrected at the corresponding position information;

s4, correcting the initial mask layout by applying a matched correction rule based on the position information of the mask pattern to be corrected; and

and S5, outputting the corrected mask layout.

In step S1, an initial mask pattern 10 may be drawn by the pattern drawing software, and then the initial mask pattern 10 may be loaded onto the reticle to obtain an initial mask layout, which includes one or more initial mask patterns thereon. The coordinate information corresponding to each of the initial mask patterns 10 may be automatically obtained by the pattern drawing software after the drawing is completed. The graphics rendering software may include klayout software. The drawn initial mask layout is typically stored in a gds file format.

Referring to fig. 2A, 2B, 2C and 2D, the initial mask patterns 10 correspond to one-dimensional patterns. Including one initial mask pattern 10 arranged in the Y direction (fig. 2A). One initial mask pattern 10 arranged in the X direction (fig. 2B). A plurality of initial mask patterns 10 regularly arranged in the Y direction (fig. 2C). A plurality of initial mask patterns 10 regularly arranged in the X direction (fig. 2D).

Referring to fig. 3A, 3B and 3C, the initial mask pattern 10 corresponds to a two-dimensional arrangement pattern. Which includes a plurality of regular initial mask patterns 10 (fig. 3A) arranged regularly. A plurality of regular initial mask patterns 10 arranged in a staggered manner (fig. 3B). A plurality of initial mask patterns 10 regularly arranged in a slanted strip line shape (fig. 3A).

As can be seen from the illustrations of fig. 2A-2D and fig. 3A-3C, the initial mask pattern 10 is generally rectangular or elongated strip-shaped. And the plurality of initial mask patterns 10 are generally arranged regularly or periodically. Of course, the illustration only provides a portion of a more conventional mask pattern, and there are other shapes of mask patterns, other types of irregular shapes, and mask patterns with no regular arrangement based on the complexity of various semiconductor devices, and will not be described in detail herein.

In a specific embodiment, based on the regular or periodic arrangement of the initial mask patterns 10, in step S2, an initial position information matrix about each initial mask pattern 10 may be established based on the coordinate information corresponding to each initial mask pattern 10, and each initial mask pattern 10 may be calibrated by using the initial position information matrix.

As some options, based on the initial mask pattern 10 being a regular shape. Any one of a point on the edge line, an included angle, and any point in the edge line of the initial mask pattern 10 may be used as the corresponding coordinate information to establish the initial position information matrix. And has a corresponding center point based on the initial mask pattern 10 being a regular shape. Alternatively, in order to be well adapted to initial mask patterns 10 of different shapes, it is selected to establish an initial position information matrix regarding each initial mask pattern 10 based on the corresponding center coordinates of the initial mask pattern 10.

Referring to fig. 4A and 4B, fig. 4A is a schematic diagram of the distribution of the initial mask patterns 10 identical to that of fig. 3B, and fig. 4B is a schematic diagram of an initial position information matrix established corresponding to fig. 4A, in which coordinate information corresponding to the initial mask patterns 10 is considered to be inputted with a "P" mark. Based on the initial mask patterns 10 arranged in a staggered manner, positions where no initial mask pattern 10 is present correspond to null. How to convert the initial mask patterns 10 with regular arrangement into the corresponding initial position information matrix is an optional way as follows:

after the initial mask pattern 10 (shown in fig. 4A) is obtained based on the klayout pattern drawing software drawing, the coordinate information at the corresponding vertex can be identified. If the initial position information matrix of the initial mask pattern 10 is established based on the corresponding center coordinates of each initial mask pattern, a python algorithm can be further written by using a python interface of the klayout tool to further obtain the center coordinates based on the vertex coordinates, and then the initial position information matrix is established based on the center coordinates.

Referring to fig. 5A, in step S3, a part or all of the initial mask patterns 10 are selected as the mask patterns 20 to be modified. Generally, the initial mask patterns 10 at the edges are selected as the mask patterns 20 to be corrected because the environment of the initial mask patterns 10 at the edges is different from the environment of the initial mask patterns 10 at the center, and the process window of the initial mask patterns 10 at the edges is smaller during exposure imaging, and the exposure imaging effect is also poorer. It should be noted that: due to the differences in the structures of different semiconductor chips of different products, the specific imaging requirements of different semiconductor chips are different, and therefore, it is also possible to select the initial mask patterns 10 at other positions, and the selected positions and the selected portions or all are determined based on the requirements of the exposure image.

In step S3, a correction rule for each of the mask patterns 20 to be corrected is provided. In some specific embodiments, the modification rule includes a modification manner and a modification content related to the corresponding modification manner, and the modification manner includes one or more of a movement of an edge of the mask pattern 20 to be modified, an overall movement of one mask pattern 20 to be modified, and an addition of a sub-resolution auxiliary pattern to the mask pattern 20 to be modified. These correction methods are only a partial list, and may be a whole rotation of the mask pattern 20 to be corrected; the movement of the edge is divided into the movement of the whole edge or one edge is divided into a plurality of sections, and the part of one edge is selected to move.

In a specific embodiment, the correction content in the corresponding correction mode includes a moving direction and a moving value, position information of the added sub-resolution assistance, and size information. The direction of movement includes the direction of movement of a part of or all of the edges of each mask pattern 20 to be corrected.

Referring to fig. 5B, an edge of the mask pattern 20 to be corrected at the upper left corner in fig. 5B is shifted to the right by a predetermined value. The direction of movement also includes the direction of movement of the entire mask pattern 20 to be corrected, as in fig. 5B the entire upper right-hand mask pattern 20 to be corrected is moved relatively to the right by a set value. The sub-resolution auxiliary pattern 30 is also a commonly used method for correcting the mask pattern 20 to be corrected, and the addition can be completed well by knowing the position information of the sub-resolution auxiliary pattern 30 relative to the mask pattern 20 to be corrected and the size information of the sub-resolution auxiliary pattern 20, for example, 3 sub-resolution auxiliary patterns are correspondingly added to the mask pattern 20 to be corrected at the lower left corner in fig. 5B, and 3 sub-resolution auxiliary patterns are added along the Y direction.

It should be noted that: when the initial position information matrix is established, after each initial mask pattern 10 is calibrated, no matter what kind of correction operation is performed on the initial mask pattern 10 corresponding to any position of the matrix, the position of each initial mask pattern 10 in the initial position information matrix is always unchanged, the correction rule is matched with the mask pattern 10 to be corrected at the corresponding position information position by associating each correction rule with the initial position information matrix, so that the correction rule can be always associated with the mask pattern 10 to be corrected at the corresponding initial position information matrix when the correction operation is performed on the mask pattern 10 to be corrected, when the selected mask pattern 20 to be corrected is corrected, the corresponding mask pattern 20 to be corrected can be quickly aligned without traversing all the initial mask patterns 10, the search speed can be well accelerated, and errors in the search process can be avoided, thereby improving the correction speed and the correction accuracy.

Referring to fig. 6, associating each correction rule with the initial position information matrix to match the correction rule to the mask pattern to be corrected 10 at the corresponding position information includes the steps of:

and establishing an operation matrix with the same size as the initial position information matrix, wherein the content of the element under the same position in the operation matrix is a correction rule of the mask pattern to be corrected. The matrix shown in fig. 6 corresponds to an operation matrix having the same size as the initial position information matrix shown in fig. 4B. Equal dimensions are understood to mean that the number of rows and columns of the matrix is equal.

Referring to fig. 7, the step of establishing an operation matrix with the same size as the initial position information matrix, where the elements at the same position in the operation matrix are the correction rule of the mask pattern to be corrected, includes the following steps:

s31, establishing an operation matrix with the same size as the initial position information matrix;

s32, setting the corresponding correction mode into the operation matrix element of the corresponding position; and

and S33, adding the corresponding correction content to the corresponding correction mode.

In step S31 and step S32, a python algorithm may be written based on a python interface of the klayout tool to establish an operation matrix with a normal size, and after the establishment is completed, a correction rule of each mask pattern to be corrected is defined to a position corresponding to the operation matrix.

In step S33, the correction contents may be added one by one in accordance with the correction method. The specific operation is as follows: and sequentially adding the elements to the center of the matrix according to the initial position information matrix and by taking the edge elements of the matrix as a reference. For example, adding from the order of the outermost rows step by step to the inner rows.

When one mask pattern to be corrected comprises a plurality of correction modes and a plurality of correction contents, all the correction modes and the corresponding correction contents are stored in one position element of the operation matrix corresponding to the mask pattern to be corrected.

Alternatively, in some other embodiments, each correction rule may be associated with the initial position information matrix by establishing a mapping relationship between the correction rule and the initial position information matrix, rather than by establishing an operation matrix. The mapping relation can be established by writing a python algorithm based on a python interface of the klayout tool.

As an example, the initial position information matrix created for the initial mask pattern shown in fig. 8A is shown in fig. 8B, the operation matrix with the same size is further set as shown in fig. 8C, and the content corresponding to the correction rule is added for fig. 8C, and the process may be roughly as follows:

1. the correction mode is to perform edge-shifting correction on the mask pattern to be corrected at four corners, and then the index information of the corresponding position element on the operation matrix is: the elements of (0,0), (0, end), (end,0), (end ) are stored in the operation mode of side shift, and then further stored in the values of the distance of side shift relatively outward, which can be set to 1-20nm, or other values.

2. The correction mode is to correct the edge movement when the initial mask patterns of the first line and the last line are used as the mask patterns to be corrected, and then the index information of the corresponding position elements on the operation matrix is: and (2: end-2,0) and the element with the index of (2: end-2, end) index range, and storing the operation mode and the moving distance value corresponding to the edge moving outwards most into the corresponding operation matrix element. The distance value may be set to 1-20nm, or other values.

3. The correction mode is to select the elements with the index ranges of (1: end-1, 1) and (1: end-1, end-1) for the correction of the edge shift when the initial mask pattern of the second row and the second last row is the mask pattern to be corrected, and store the operation mode and the shift distance value of the short edge and the long edge which are correspondingly shifted outwards into the corresponding operation matrix element. The distance value may be set to 1-20nm, or other values.

4. The correction mode is to select the elements with the index ranges of (0,1: end-1) and (end,1: end-1) for the correction of the edge shift when the initial mask patterns of the first column and the last-but-one column are the mask patterns to be corrected, and store the operation modes and the shift distance values of one short edge and two long edges which are correspondingly shifted outwards into the corresponding operation matrix elements. The distance value may be set to 1-20nm, or other values.

5. The correction mode is to select the elements with the index ranges of (1,3: end-3) and (end-1,3: end-3) for the correction of the edge shift when the initial mask patterns of the second row and the second last row are the mask patterns to be corrected, and store the operation modes and the shift distance values corresponding to two short edges shifted outwards and a long edge shifted outwards into the corresponding operation matrix elements. The distance value may be set to 1-20nm, or other values.

6. And reading the central points of the initial mask patterns of the first column and the last column in the initial position information matrix, and drawing the sub-resolution auxiliary pattern on the first column at a certain distance outwards from the central points by taking the central points as coordinates. And reading the coordinates of the central points of the first row (0: end,0) and the last row (0: end, end), the first column (0,0: end) and the last column (end,0: end) in the initial position information matrix, and drawing the sub-resolution auxiliary graph outwards at a certain distance.

Further, step S4 is executed to apply the matched correction rule to correct the initial mask layout based on the position information of the mask pattern to be corrected. Fig. 8D is a mask pattern after correcting the initial mask pattern shown in fig. 8A based on a specific correction rule set.

Finally, in step S5, the corrected mask layout is output and then saved in the gds file format.

Referring to fig. 9, a second embodiment of the present invention provides an apparatus 100 for generating a mask pattern, which includes a setting module 30, a position information matrix creating module 40, an association module 50, a correction performing module 60, and an output module 70.

The setting module 30: providing an initial mask layout, wherein the initial mask layout comprises one or more initial mask patterns, and each initial mask pattern has corresponding coordinate information;

the position information matrix establishing module 40: the initial position information matrix is used for establishing an initial position information matrix related to each initial mask pattern based on the coordinate information corresponding to each initial mask pattern, and each initial mask pattern is calibrated by using the initial position information matrix;

the association module 50: selecting part or all of the initial mask patterns as mask patterns to be corrected, providing correction rules about each mask pattern to be corrected, and associating each correction rule with the initial position information matrix to match the correction rule to the mask pattern to be corrected at the corresponding position information;

the correction execution module 60: correcting the initial mask layout by applying a matched correction rule based on the position information of the mask pattern to be corrected;

the output module 70: and outputting the corrected mask layout.

Referring to fig. 10, a third embodiment of the invention provides an electronic device 200, which includes one or more processors 201 and a memory device 202,

a storage device 202 for storing one or more programs which, when executed by the one or more processors 201, cause the one or more processors 201 to implement the method for generating a mask pattern as provided by the first embodiment.

Referring now to FIG. 11, a block diagram of a computer system 800 suitable for use with a terminal device/server implementing an embodiment of the present invention is shown. The terminal device/server shown in fig. 11 is only an example, and should not bring any limitation to the functions and the scope of use of the embodiments of the present application.

As shown in fig. 11, the computer system 800 includes a Central Processing Unit (CPU)801 that can perform various appropriate actions and processes in accordance with a program stored in a Read Only Memory (ROM)802 or a program loaded from a storage section 808 into a Random Access Memory (RAM) 803. In the RAM 803, various programs and data necessary for the operation of the system 800 are also stored. The CPU 801, ROM 802, and RAM 803 are connected to each other via a bus 804. An input/output (I/O) interface 805 is also connected to bus 804.

The following components are connected to the I/O interface 805: an input portion 806 including a keyboard, a mouse, and the like; an output section 807 including a signal such as a Cathode Ray Tube (CRT), a Liquid Crystal Display (LCD), and the like, and a speaker; a storage portion 808 including a hard disk and the like; and a communication section 809 including a network interface card such as a LAN card, a modem, or the like. The communication section 809 performs communication processing via a network such as the internet. A drive 810 is also connected to the I/O interface 805 as needed. A removable medium 811 such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, or the like is mounted on the drive 810 as necessary, so that the computer program read out therefrom is mounted on the storage section 808 as necessary.

According to an embodiment of the present disclosure, the processes described above with reference to the flowcharts may be implemented as computer software programs. For example, embodiments of the present disclosure include a computer program product comprising a computer program embodied on a computer readable medium, the computer program comprising program code for performing the method illustrated in the flow chart. In such an embodiment, the computer program can be downloaded and installed from a network through the communication section 809 and/or installed from the removable medium 811. The computer program performs the above-described functions defined in the method of the present invention when executed by the Central Processing Unit (CPU) 801. It should be noted that the computer readable medium of the present invention can be a computer readable signal medium or a computer readable storage medium or any combination of the two. A computer readable storage medium may be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination of the foregoing. More specific examples of the computer readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

Computer program code for carrying out operations for aspects of the present application may be written in any combination of one or more programming languages, including an object oriented programming language such as Java, Smalltalk, C + + or the like and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any type of network, including a Local Area Network (LAN) or a Wide Area Network (WAN), or the connection may be made to an external computer (for example, through the Internet using an Internet service provider).

The flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present invention. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.

The units described in the embodiments of the present invention may be implemented by software or hardware. As another aspect, the present invention also provides a computer-readable medium, which may be contained in the apparatus described in the above embodiments; or may be present separately and not assembled into the device.

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit of the present invention are intended to be included within the scope of the present invention.

Claims

1. A method for generating a mask pattern, comprising the steps of:

providing an initial mask layout, wherein the initial mask layout comprises one or more initial mask patterns, the initial mask patterns are periodically or regularly arranged, and each initial mask pattern has corresponding coordinate information;

establishing an initial position information matrix related to each initial mask pattern based on the coordinate information corresponding to each initial mask pattern, and calibrating each initial mask pattern by using the initial position information matrix;

selecting part or all of the initial mask patterns as mask patterns to be corrected, providing correction rules about each mask pattern to be corrected, and associating each correction rule with the initial position information matrix to match the correction rule to the mask pattern to be corrected at the corresponding position information;

correcting the initial mask layout by applying a matched correction rule based on the position information of the mask pattern to be corrected;

and outputting the corrected mask layout.

2. The method for generating a mask pattern according to claim 1, wherein associating each modification rule with the initial position information matrix to match a modification rule to the mask pattern to be modified at the corresponding position information comprises the steps of:

and establishing an operation matrix with the same size as the initial position information matrix, wherein the content of the element under the same position in the operation matrix is a correction rule of the mask pattern to be corrected.

3. The method for generating a mask pattern as claimed in claim 2, wherein: the correction rule comprises a correction mode and correction contents related to the corresponding correction mode, the correction mode comprises one or more of the movement of the edge of the mask graph to be corrected, the integral movement of the mask graph to be corrected and the addition of a sub-resolution auxiliary graph to the mask graph to be corrected,

the correction contents in the corresponding correction mode include the direction and the value of the movement, the position information and the size information of the added sub-resolution aid.

4. A method for generating a mask pattern according to claim 3, wherein: establishing an operation matrix with the same size as the initial position information matrix, wherein the correction rule that the elements with the same positions in the operation matrix are the mask pattern to be corrected comprises the following steps:

establishing an operation matrix with the same size as the initial position information matrix;

setting the corresponding correction mode into the operation matrix element at the corresponding position;

and adding the corresponding correction content to the corresponding correction mode.

5. The method for generating a mask pattern according to claim 4, wherein: the specific operation of adding the corresponding correction content to the corresponding correction mode is as follows:

and sequentially adding the elements to the center of the matrix according to the initial position information matrix and by taking the edge elements of the matrix as a reference.

6. Method for generating a mask pattern according to any of claims 1 to 5, characterized in that: the initial mask patterns are regular patterns and are provided with center points, and an initial position information matrix related to each initial mask pattern is established on the basis of the corresponding center coordinate of each initial mask pattern.

7. The method for generating a mask pattern according to claim 6, wherein: and selecting the initial mask pattern relatively close to the edge element in the initial mask patterns as the mask pattern to be corrected.

8. The method for generating a mask pattern as claimed in claim 7, wherein when a mask pattern to be corrected includes a plurality of correction manners and a plurality of correction contents, all the correction manners and the corresponding correction contents corresponding to the mask pattern to be corrected are stored in a position element of the operation matrix.

9. An apparatus for generating a mask pattern, comprising

Setting a module: providing an initial mask layout, wherein the initial mask layout comprises one or more initial mask patterns, and each initial mask pattern has corresponding coordinate information;

a position information matrix establishing module: the initial position information matrix is used for establishing an initial position information matrix related to each initial mask pattern based on the coordinate information corresponding to each initial mask pattern, and each initial mask pattern is calibrated by using the initial position information matrix;

a correlation module: selecting part or all of the initial mask patterns as mask patterns to be corrected, providing correction rules about each mask pattern to be corrected, and associating each correction rule with the initial position information matrix to match the correction rule to the mask pattern to be corrected at the corresponding position information;

a correction execution module: correcting the initial mask layout by applying a matched correction rule based on the position information of the mask pattern to be corrected;

an output module: and outputting the corrected mask layout.

10. An electronic device, characterized in that: comprising one or more processors and memory devices,

storage means for storing one or more programs which, when executed by the one or more processors, cause the one or more processors to carry out a method for generating a mask pattern as claimed in any one of claims 1 to 8.