CN114487752A

CN114487752A - Light emitting diode driving device and detection device

Info

Publication number: CN114487752A
Application number: CN202210093071.5A
Authority: CN
Inventors: 黄志臻; 孙成; 杨德操; 华志强
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2022-01-26
Filing date: 2022-01-26
Publication date: 2022-05-13

Abstract

The application provides a light emitting diode driving device and a light emitting diode detecting device, which realize the driving and the detection of a large number of light emitting diodes on a wafer in a non-contact mode, not only improve the efficiency and the precision of the driving and the detection, but also avoid damaging a bonding pad or a surface of the light emitting diode. The driving device may include a power source, a first plate, and a second plate. The first end of the power supply is connected with the first polar plate, the second end of the power supply is connected with the second polar plate, the first polar plate and the second polar plate are arranged in parallel, a preset distance is reserved between the first polar plate and the wafer, and the second polar plate is in contact with the wafer and used for placing the wafer.

Description

Light emitting diode driving device and detection device

Technical Field

The present disclosure relates to the field of semiconductor technologies, and more particularly, to a light emitting diode driving apparatus and a detecting apparatus.

Background

With the rapid development of science and technology, Light Emitting Diodes (LEDs) have been widely used on display screens of electronic devices such as mobile phones and tablet computers. A huge number (e.g., millions) of leds may be integrated on the same wafer, requiring a huge amount of led testing before a huge amount of transfers can occur.

The related art generally uses a probe to contact with electrodes (i.e., positive and negative electrodes) of a light emitting diode, and supplies a direct current through a power supply to realize driving and detection of the light emitting diode. However, the contact driving and detecting by the probe is often very inefficient, and once the probe is damaged, not only the driving and detecting accuracy is affected, but also the pad or surface of the led is damaged.

Therefore, a technical solution is needed to improve efficiency and accuracy without damaging the bonding pads or the surface of the led.

Disclosure of Invention

The application provides a light emitting diode drive arrangement and detection device, the wafer that the integration has light emitting diode places in the second polar plate, and with have predetermined distance (wafer and first polar plate contactless promptly) between the first polar plate, realize drive and detection of huge amount of light emitting diode on the wafer through the non-contact mode, has not only improved drive and the efficiency and the precision that detect, and avoids causing the damage to light emitting diode's pad or surface.

In a first aspect, the present application provides a light emitting diode driving apparatus, where a light emitting diode may be integrated on a wafer, and the driving apparatus may include a power source, a first plate, and a second plate.

The first end (which can be a positive end) of the power supply can be connected with the first polar plate, the second end (which can be a negative end) of the power supply can be connected with the second polar plate, the first polar plate and the second polar plate can be arranged in parallel, a preset distance can be arranged between the first polar plate and the wafer (namely the first polar plate is not in contact with the wafer), the second polar plate can be in contact with the wafer, and the second polar plate is used for placing the wafer.

It is contemplated that the power supply may provide high voltage (e.g., 20kV) direct current (which may be high voltage pulses, etc.) through the positive and negative terminals. The direct current applied to the first plate and the second plate can enable an ionization field to be formed between the first plate and the second plate, electrons excited by the ionization field can be injected into the active light emitting layer of each light emitting diode on the wafer, and each light emitting diode on the wafer can emit light (i.e. each light emitting diode is lighted), that is, the driving of each light emitting diode is realized.

It can be seen that the driving device provided by the present application forms an ionization field by the direct current applied to the two electrode plates, and excites an Electro Luminescence (EL), thereby finally realizing the driving of the light emitting diode.

In the technical scheme provided by the application, the second polar plate is in contact with the wafer, the first polar plate is not in contact with the wafer, the driving of the huge number of light-emitting diodes on the wafer is realized in a non-contact mode, the driving efficiency and the driving precision are improved (namely the reliable driving of the huge number of light-emitting diodes is improved), the pad or the surface of the light-emitting diode is prevented from being damaged in the non-contact mode, and the light-emitting diode is protected.

In one possible implementation, the first plate may be a hollow flat structure in a shape of a Chinese character 'hui'.

Alternatively, the hollow portion of the first plate may be located at a central position of the first plate. The hollow part can enable the first polar plate to be in a window structure in a shape of Chinese character 'hui'.

For example, the cross section of the first plate in the direction parallel to the second plate may be rectangular, square, etc., and the present application is not limited thereto.

Furthermore, the joint of two adjacent edges in the plurality of edges of the first polar plate is provided with a chamfer. It is conceivable that the chamfer may prevent the first electrode plate from generating the point discharge, improving the safety of the driving device.

In one possible implementation, the shape of the second plate may be the same as the shape of the wafer.

Alternatively, the second plate and the wafer may both be circular. Of course, the second plate and the wafer may be in other shapes than circular, and the application is not limited thereto.

Further, in order to achieve reliable driving of all the leds on the wafer, the size of the second diode may be larger than the size of the wafer.

It will be appreciated that the shape of the second plate and the shape of the wafer may not be absolutely the same.

For example, the second plate and the wafer may both be square, etc., as long as the size of the second plate is larger than the size of the wafer.

For example, the second plate may be square, and the wafer may be circular, as long as the side length of the second plate is greater than the diameter of the wafer.

In one possible implementation, the first surface of the second plate (the surface for indicating that the second plate contacts the wafer) is plated with a metal layer (copper, gold, silver, etc. can be used).

Alternatively, the metal layer may cover the entire area of the first surface in order to increase the number of electrons escaping, i.e. to allow more electrons to escape.

Further, the metal layer is covered with an insulating layer, and the insulating layer covers the entire area of the metal layer.

It can be understood that the insulating layer can reduce the escape speed of electrons, avoid air breakdown to cause air arcing, improve safety, increase the insulativity of the upper surface of the second polar plate and prevent the point discharge of the second polar plate.

It can be seen that by arranging the metal layer and the insulating layer on the upper surface of the second polar plate, the escaping quantity of electrons can be ensured, the reliable escaping of the electrons can be realized, and the stability and the uniformity of an ionization field between the first polar plate and the second polar plate can be improved.

Furthermore, the second surface of the second plate (indicating the surface of the second plate away from the wafer) may be connected to the second end of the power supply, so as to realize the back outgoing line of the second plate. The back outgoing line can improve the insulativity of the second polar plate and increase the uniformity of an ionization field.

In one possible implementation, the first electrode plate and the second electrode plate may be made of metal (e.g., copper, aluminum, etc.), respectively. Of course, the first electrode plate and the second electrode plate may be made of other metal materials besides copper and aluminum, and the application is not limited.

It should be noted that the metal materials used for the first polar plate and the second polar plate may be the same or different.

In a possible implementation manner, the driving device provided by the present application may further include a first fixing member, and the first fixing member may be configured to fix the first pole plate.

It should be noted that, in order to ensure that a stable and uniform ionization field is formed between the first pole plate and the second pole plate, one side of the first pole plate fixed by the first fixing member needs to be close to the second pole plate, and the other side of the first fixing member may be away from the second pole plate.

In another possible implementation manner, the driving device provided by the present application may further include a second fixing member, and the second fixing member may be configured to fix the second pole plate.

Alternatively, the first fixing member and the second fixing member may be made of an insulating material (such as fiberglass or stainless steel, etc.).

In one possible implementation, the power supply may be a pulse generator. The pulse generator can control the rising edge of the high-voltage pulse so as to avoid arc discharge caused by breakdown of air and improve the reliability of the driving device.

In a second aspect, the present application provides a light emitting diode detection apparatus, which may include a detection platform, a capture device, and a driving apparatus provided in the first aspect and possible implementations thereof. The capture device and the detection apparatus may be separately connected to the detection platform.

Optionally, the detection platform may be for: a stationary capture device and a drive means.

As can be understood, the detection platform realizes the integral fixation of the driving device by fixing the first fixing part and the second fixing part.

The drive means may be for: each light emitting diode on the wafer is driven.

The capture device may be configured to: and acquiring information of the light emitting diode.

The detection device provided by the application can realize the reliable drive of each light emitting diode on the wafer through the driving device, the detection efficiency and the detection precision are improved, the pad or the surface of the light emitting diode can be prevented from being damaged by the non-contact driving and detection, and the light emitting diode is protected.

Optionally, the information of the light emitting diode includes at least one of position information (which may be indicated by coordinate information), brightness information, and spectrum information (which may include wavelength, half-peak width, and the like).

It is conceivable that, in a scenario where each led on the wafer is driven, whether the led is damaged or not may be determined according to the luminance information and the wavelength of each led.

Furthermore, the position of the damaged light-emitting diode can be determined by combining coordinate information on the basis of the brightness information and the wavelength, so that the high-precision detection of the light-emitting diode is realized.

Illustratively, the capture device may employ a push-broom spectral camera (e.g., a push-broom spectral line camera or a push-broom spectral area camera, etc.).

It should be understood that the second aspect of the present application is consistent with the technical solution of the first aspect of the present application, and similar advantageous effects are obtained in various aspects and corresponding possible embodiments, and thus, detailed description is omitted.

Drawings

In order to more clearly illustrate the technical solutions in the present application or the prior art, the following briefly introduces the drawings needed to be used in the description of the embodiments or the prior art, and it is obvious that the drawings in the following description are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to the drawings without inventive labor.

Fig. 1 is a schematic structural view of a light emitting diode in an embodiment of the present application;

FIG. 2 is a schematic configuration diagram of a driving apparatus in an embodiment of the present application;

FIG. 3 is a schematic structural view of a first plate in the embodiment of the present application;

FIG. 4 is a schematic structural diagram of a first plate and a first fixing member in an embodiment of the present application;

fig. 5 is a schematic structural diagram of a second electrode plate and a second fixing member in an embodiment of the present application;

fig. 6 is a schematic structural view of a detection device in an embodiment of the present application.

Detailed Description

The technical solution in the present application will be described below with reference to the accompanying drawings.

To make the purpose, technical solutions and advantages of the present application clearer, the technical solutions in the present application will be clearly and completely described below with reference to the drawings in the present application, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

The terms "first," "second," and the like in the description examples and claims of this application and in the drawings are used for descriptive purposes only and are not to be construed as indicating or implying relative importance, nor order. Furthermore, the terms "comprises" and "comprising," as well as any variations thereof, are intended to cover a non-exclusive inclusion, such as a list of steps or elements. A method, system, article, or apparatus is not necessarily limited to those steps or elements explicitly listed, but may include other steps or elements not explicitly listed or inherent to such process, system, article, or apparatus.

It should be understood that in the present application, "at least one" means one or more, "a plurality" means two or more. "and/or" for describing an association relationship of associated objects, indicating that there may be three relationships, e.g., "a and/or B" may indicate: only A, only B and both A and B are present, wherein A and B may be singular or plural. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship.

"at least one of the following" or similar expressions refer to any combination of these items, including any combination of single item(s) or plural items. For example, at least one (one) of a, b, or c, may represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", wherein a, b, c may be single or plural.

With the rapid development of science and technology, light emitting diodes have been widely used in display screens of electronic devices such as mobile phones and tablet computers. Depending on the size, LEDs can often include micro-scale LEDs and nano-scale LEDs (i.e., nano-LEDs). Both micro LEDs and nano LEDs may be referred to as micro light emitting diodes (hereinafter, simply referred to as light emitting diodes).

Because the size of the light emitting diode is small and exquisite, more pixel points can be made on the display screen with the same size (the display effect of the display screen can be more exquisite). Thus, in order to accurately detect led's in huge quantities and satisfy ultra high per hour (UPH), a huge number (e.g. millions) of led's may be integrated on the same wafer, as shown in fig. 1. Fig. 1 illustrates an example of wafer w (wafer) with 2 LEDs in total, integrated LEDs 1 and LEDs 2.

Referring to fig. 1, the LED1 and the LED2 are attached to the wafer W through the adhesive layer 27, respectively. Each of the LEDs 1 and 2 may include an N-type doped substrate (e.g., GaN) 21, an N-type electrode (e.g., the cathode of the LED, which may be made of a metal such as copper or gold) 22, a P-type electrode (e.g., the anode of the LED, which may be made of a metal such as copper or gold) 23, a P-type doped substrate (e.g., GaN) 24, an active light emitting layer 25, and an insulating layer (e.g., silicon dioxide) 26.

Wherein, the N-type electrode 22 is located on the upper surface of the N-type doped layer 21. The active light emitting layer 25 is located on the upper surface of the N-type doped layer 21, the P-type doped substrate 24 is located on the upper surface of the active light emitting layer 25, and the P-type electrode 13 is located on the upper surface of the P-type doped substrate 24. The insulating layer 26 may insulate the N-type doped sinker 21, the P-type doped substrate 24, and the active light emitting layer 25 from the outside.

Alternatively, an ohmic contact may be formed between the N-type electrode 22 and the N-type doped layer 21. Similarly, an ohmic contact may be formed between the P-type electrode 23 and the P-type doped substrate 24.

For example, the active light emitting layer 25 may be made of a different material such as GaN. It is contemplated that the material used for the active light emitting layer 25 may determine the color of the light emitting diode.

It is conceivable that the active light emitting layer 25 may form an NP channel since the active light emitting layer 25 is positioned between the N-type doped layer 21 and the P-type doped substrate 24. The electrons are excited in the NP channel and recombine with the holes, so that the light emitting diode emits light, and the light emitting diode is driven (the light emitting diode is also lighted).

If the led is damaged before the mass transfer, a display module (a display screen for processing into an electronic product) will have defects (which may be referred to as dotted line defects) after the mass transfer of the led. Therefore, before the led is transferred, the led needs to be subjected to a huge amount of detection.

The related art generally uses a probe to contact with electrodes (i.e., positive and negative electrodes) of a light emitting diode, and supplies a direct current through a power supply to realize driving and detection of the light emitting diode. However, the contact method by the probe is often very inefficient, and once the probe is damaged, not only the precision of driving and detecting is affected, but also the bonding pad or surface of the light emitting diode is damaged.

In order to improve the efficiency and the precision of the driving and the detection of the light emitting diode and avoid damaging a bonding pad or a surface of the light emitting diode, the light emitting diode can be driven quickly and reliably through the driving device, and further the mass detection of the light emitting diode is realized.

The embodiment of the application provides a driving device, as shown in fig. 2. The driving device 10 may include a Power Supply (PS), a plate (i.e., a first plate) 11, and a plate (i.e., a second plate) 12.

Referring to fig. 2, a first end (which may be a positive end DC +) of the power supply PS may be connected to the plate 11, a second end (which may be a negative end DC-) of the power supply PS is connected to the plate 12, the plate 11 and the plate 12 may be arranged in parallel, a preset distance is provided between the plate 11 and the wafer W (that is, the plate 11 and the wafer W are not in contact with each other), the plate 12 and the wafer W are in contact with each other, and the wafer W may be placed on the plate 12.

It is contemplated that the power source PS may provide a high voltage (e.g., 20kV) direct current (which may be high voltage pulses, etc.) through a positive terminal DC + and a negative terminal DC-. The direct current applied to the plate 11 and the plate 12 can enable an ionization field to be formed between the plate 11 and the plate 12, and electrons excited by the ionization field can be injected into an active light emitting layer of each light emitting diode on the wafer, so that each light emitting diode on the wafer emits light (i.e., each light emitting diode is lit), that is, the driving of each light emitting diode is realized.

It can be seen that the driving device provided by the embodiment of the application forms an ionization field by the direct current applied to the two polar plates, and excites the electricity to emit light, so as to finally realize the driving of the light emitting diode.

The polar plate 22 in the embodiment of the application is in contact with the wafer, and the polar plate 21 is not in contact with the wafer, so that the driving of the huge number of light emitting diodes on the wafer is realized in a non-contact mode, the driving efficiency and the driving precision are improved (namely the reliable driving of the huge number of light emitting diodes is improved), the pad or the surface of the light emitting diode is prevented from being damaged by the non-contact driving, and the light emitting diode is protected.

In one possible implementation, as shown in fig. 3, the plate 11 may be a hollow flat structure in a shape of a Chinese character 'hui'. In fig. 3, the hollow portion 110 of the plate 11 may be located at the center of the plate 11. The hollow portion 110 may allow the entire electrode plate 11 to have a window structure in a shape of a Chinese character 'hui'.

It is conceivable that the thickness of the plate 11 is thin (e.g. 1mm or 2mm, etc.), so that the plate 11 is of a flat structure.

Illustratively, the cross section of the plate 11 in a direction parallel to the plate 12 may be rectangular, square, etc., and the embodiment of the present application is not limited thereto.

Further, the joint of two adjacent edges of the plurality of edges of the plate 11 is provided with a chamfer. It is conceivable that the chamfer prevents the electrode plate 11 from generating the point discharge, improving the safety of the driving device.

Alternatively, the plate 11 may be made of a metal material such as copper or aluminum. Since the metal material is not easily oxidized, the metal plate 11 can increase the number of escaping electrons, reduce air ionization, and has high reliability. Of course, the plate 11 may be made of other metal materials besides copper and aluminum, and the embodiment of the present application is not limited.

It is conceivable that, when the electrode plate 11 is made of transparent tin-doped indium oxide (ITO) glass, although driving of the light emitting diode can be achieved, the ITO glass is easily oxidized, so that the ITO glass is discolored (the ITO glass does not have light transmittance due to severe discoloration) and the conductivity is impaired. Moreover, the conductivity of the ITO glass is inversely proportional to the transmittance, and further, the light emitting diode cannot be detected easily as the oxidation degree of the ITO glass is increased. Therefore, compared with the ITO glass, the electrode plate 11 made of metal in the embodiment of the present application not only ensures the conductivity of the electrode plate 11, but also provides conditions for further detection after the light emitting diode is driven.

In an example, the driving device 10 provided in the embodiment of the present application may further include a fixing member (i.e., a first fixing member) 13, and the fixing member 13 may be used to fix the pole plate 11, as shown in fig. 4.

Alternatively, referring to fig. 4, a plurality of through holes 130 may be provided on the fixing member 13. The fixing member 13 can be mounted on a detection device (described below) of the led through the through hole 130 (and an insulating screw (e.g., a plastic screw, a steel screw), etc.).

It should be noted that the embodiment of the present application provides only one possible structure of the fixing member 13, and other fixing members that can fix the pole plate 11 may also be adopted for the fixing member 13, and the structure of the fixing member 13 is not limited in the embodiment of the present application.

It should be noted that, in order to ensure a stable and uniform ionization field between the plate 11 and the plate 12, one side of the fixing member 13 for fixing the plate 11 needs to be close to the plate 12, and the other side of the fixing member 13 can be away from the plate 12.

Illustratively, the fixing member 13 may be made of fiberglass or stainless steel. Of course, the fixing member 13 may also be made of other insulating materials besides glass fiber, and the embodiment of the present application is not limited.

In one possible implementation, the shape of the plate 12 may be the same as the shape of the wafer W, for example, both may be circular as shown in fig. 5. Of course, the plate 12 and the wafer W may have other shapes than a circular shape, and the embodiment of the present application is not limited thereto.

Further, in order to achieve reliable driving of all the leds on the wafer W, the size of the plate 12 may be larger than that of the wafer W.

It will be appreciated that the shape of the plate 12 and the shape of the wafer W may not be absolutely the same.

For example, the plate 12 and the wafer W may both be square, etc., as long as the size of the plate 12 is larger than the size of the wafer W.

Also for example, the plate 12 may be square and the wafer W may be circular, as long as the side length of the plate 12 is greater than the diameter of the wafer W.

Further, a first surface of the plate 12 (which is used to indicate the surface of the plate 12 contacting the wafer W, i.e., the upper surface of the plate 12 in fig. 5) may be plated with a metal layer (not shown in fig. 5).

To increase the number of electrons escaping, i.e. to allow more electrons to escape, the metal layer may cover the entire area of the upper surface of the plate 12.

For example, the metal layer may be made of a metal material such as copper, gold, silver, and the like, and the embodiment of the present application is not limited thereto.

Further, as shown in fig. 5, the upper surface of the metal layer (i.e., the surface of the metal layer facing away from the plate 12) may be covered with an insulating layer 121, and the insulating layer 121 may cover the entire area of the metal layer. The insulating layer 121 can reduce the escape speed of electrons, avoid air arc discharge caused by air breakdown, improve safety, increase the insulation of the upper surface of the polar plate 12, and prevent the point discharge of the polar plate 12.

It can be seen that by arranging the metal layer and the insulating layer 121 on the upper surface of the plate 12, not only the escape amount of electrons can be ensured, the reliable escape of electrons can be realized, but also the stability and uniformity of the ionization field between the plate 11 and the plate 12 can be improved.

Similar to the plate 11, the plate 12 may be made of a metal material such as copper or aluminum. Of course, the plate 12 may be made of other metal materials besides copper and aluminum, and the embodiment of the present application is not limited thereto.

It should be noted that the metal material used for the plate 12 may be the same as the metal material used for the plate 11,

or may be different, and the embodiments of the present application are not limited.

In an example, the driving device 10 provided by the embodiment of the present application may further include a fixing member (i.e., a second fixing member) 14, and the fixing member 14 may be used to fix the pole plate 12, as shown in fig. 5.

Illustratively, mount 14 may include a mount 141 and a mount 142 in a stacked arrangement. The upper surface of the fixing element 141 is in contact with the lower surface of the plate 12, the lower surface of the fixing element 141 is in contact with the upper surface of the fixing element 142, the lower surface of the plate 12 (which may be the central position of the second surface (for indicating the surface of the plate 12 deviating from the wafer W) of the plate 12) may be connected to the negative end of the power supply PS through the fixing element 141 and the fixing element 142, so as to realize the back outgoing line of the plate 12, and the outgoing line 143 is shown in fig. 5. The back outgoing line can improve the insulativity of the polar plate 12 and increase the uniformity of an ionization field.

Optionally, the fixing element 141 and the fixing element 142 may be made of glass fiber, or may be made of other insulating materials such as stainless steel, and the embodiment of the present application is not limited thereto.

Similar to the fixing member 13, the fixing member 14 may be provided with a plurality of through holes 140, as shown in fig. 5. The fixing member 14 can be mounted on a detection device (described below) of the led through the through hole 140 (and an insulating screw (e.g., a plastic screw, a steel screw), etc.).

It should be noted that the embodiment of the present application provides only one possible structure of the fixing member 14, and other fixing members that can fix the pole plate 12 can be adopted for the fixing member 14, and the structure of the fixing member 14 is not limited in the embodiment of the present application.

In one possible implementation, the power source PS may be a pulse generator. The pulse generator can control the rising edge of the high-voltage pulse so as to avoid arc discharge caused by breakdown of air and improve the reliability of the driving device. Of course, the power supply PS may also adopt other power supplies capable of providing direct current, and the embodiment of the present application is not limited.

The embodiment of the application also provides a light emitting diode detection device, as shown in fig. 6. Fig. 6 does not show the power supply PS of the drive device 10. Meanwhile, the fixing member 13, the fixing member 14, and the pole plate 12 in the driving device 10 are marked in fig. 6. The pole plate 11 is shielded by the fixing member 13, so that the pole plate 11 is not shown.

Referring to fig. 6, the inspection apparatus 20 may include an inspection platform 21, a capturing device 22, and a driving apparatus 10. The capture device 22 and the detection apparatus 10 may be connected to the detection platform 21, respectively.

Alternatively, the detection platform 21 may be used to: the capture device 22 and the drive means 10 are fixed.

It is understood that the detection platform is integrally fixed to the driving device 10 by the fixing

fixtures

13 and 14.

The drive device 10 may be used to: each led on the wafer W is driven.

The capture device 22 may be used to: and acquiring information of the light emitting diode.

The detection device provided by the embodiment of the application can realize the reliable driving of each light emitting diode on the wafer through the driving device, the detection efficiency and the detection precision are improved, the pad or the surface of each light emitting diode can be prevented from being damaged by the non-contact driving and detection, and the light emitting diodes are protected.

Further, referring to fig. 6, the inspection platform 21 may include a frame portion a and a displacement portion B.

Wherein the frame part a may be used for fixing the catching device 22 and the fixing 13 in the drive means 10. The displacement portion B is used for fixing the fixing member 14 and also for adjusting the position of the plate 12, so that the capturing device 22 can obtain the image information of each led on the wafer W through the hollow portion of the plate 11.

Optionally, the information of the light emitting diode includes at least one of position information (which may be indicated by coordinate information), brightness information, and spectrum information (which may include wavelength, half-peak width, and the like). The embodiment of the present application takes the example of obtaining the coordinate information, the luminance information, and the wavelength of each light emitting diode as an example.

In one example, if the brightness of the led is lower than a predetermined brightness threshold (including no brightness), the led may be damaged.

In another example, the wavelength of the led obtained by the capturing device 22 may be compared with a preset wavelength corresponding to the color of the led, and whether the led is damaged or not may be determined.

For example, if the detected led is a red led, the wavelength corresponding to the preset led color is 650nm to 700 nm. The wavelength of the light emitting diode acquired by the capture device 22 is within the 650nm-700nm range, which may indicate that the red light emitting diode is not damaged, or that the red light emitting diode is damaged.

Alternatively, capture device 22 may employ a push-broom spectral camera (e.g., a push-broom spectral line camera or a push-broom spectral area camera, etc.). Of course, the capture device 22 may also be other devices that can obtain information of each light emitting diode, and the embodiment of the present application is not limited.

It is contemplated that capture device 22 may capture image information of each led on the wafer through hollow portion 110 of plate 11. Further, the capture device 22 processes the image information to obtain information such as wavelength and brightness of each led.

Further, since the leds have metamerism, the capture device 22 can obtain the wavelength of each led, and the leds with similar wavelengths are arranged in the same region, so as to improve the yield of the display module after mass transfer and reduce the manufacturing cost of the display module.

The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. The light-emitting diode driving device is characterized in that a light-emitting diode is integrated on a wafer; the driving device comprises a power supply, a first polar plate and a second polar plate;

the first end of power is connected first polar plate, the second end of power is connected the second polar plate, first polar plate with second polar plate parallel arrangement, first polar plate with preset distance has between the wafer, the second polar plate with the wafer contact is used for placing the wafer.

2. The drive of claim 1, wherein the first plate is a hollow flat structure having a shape of a Chinese character 'hui'.

3. The drive of claim 2, wherein the first plate has a chamfer at the junction of two adjacent edges.

4. The driving apparatus as claimed in any one of claims 1 to 3, wherein the second plate has a shape identical to that of the wafer, and the size of the second plate is larger than that of the wafer.

5. The drive of any one of claims 1 to 4, wherein the first surface of the second plate is plated with a metal layer covering the entire area of the first surface; the first surface is used for indicating that the second pole plate contacts the surface of the wafer.

6. The driving device according to claim 5, wherein the metal layer is covered with an insulating layer, and the insulating layer covers the entire area of the metal layer.

7. The driving apparatus as claimed in claim 5 or 6, wherein a second surface of the second plate is connected to a second end of the power supply, the second surface being used for indicating a surface of the second plate facing away from the wafer.

8. The driving apparatus as claimed in any one of claims 1 to 7, wherein the first and second plates are made of metal respectively.

9. The driving apparatus as claimed in any one of claims 1 to 8, further comprising a first fixing member mounted on the detecting means for fixing the first plate.

10. The driving apparatus as claimed in claim 9, further comprising a second fixing member mounted on the detecting means for fixing the second plate.

11. The driving device as claimed in claim 10, wherein the first fixing member and the second fixing member are made of insulating materials.

12. The drive of any one of claims 1 to 11, wherein the power source is a pulse generator.

13. A light emitting diode detection device is characterized in that: comprising a detection platform, a capture device, and a drive arrangement according to any one of claims 1 to 12, the capture device and the detection arrangement being respectively connected to the detection platform;

the detection platform is used for: for securing the capture device and the drive means;

the drive device is used for: driving the light emitting diode;

the capture device is to: and acquiring the information of the light emitting diode.

14. The detection device according to claim 13, wherein: the information of the light emitting diode includes at least one of position information, brightness information, and spectrum information.