CN114472894A - Metal sintering ultrathin cutting knife for silicon wafer cutting and preparation method - Google Patents

Metal sintering ultrathin cutting knife for silicon wafer cutting and preparation method Download PDF

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Publication number
CN114472894A
CN114472894A CN202111657408.2A CN202111657408A CN114472894A CN 114472894 A CN114472894 A CN 114472894A CN 202111657408 A CN202111657408 A CN 202111657408A CN 114472894 A CN114472894 A CN 114472894A
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cutting
sintering
cutting knife
silicon wafer
metal
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冉隆光
李威
毛金锐
李斌
黎梅
贾楠
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Suzhou Sail Science & Technology Co ltd
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Suzhou Sail Science & Technology Co ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/02—Compacting only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C47/00—Making alloys containing metallic or non-metallic fibres or filaments
    • C22C47/14—Making alloys containing metallic or non-metallic fibres or filaments by powder metallurgy, i.e. by processing mixtures of metal powder and fibres or filaments
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
    • C22C49/02—Alloys containing metallic or non-metallic fibres or filaments characterised by the matrix material
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
    • C22C49/14—Alloys containing metallic or non-metallic fibres or filaments characterised by the fibres or filaments
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B22F2003/247—Removing material: carving, cleaning, grinding, hobbing, honing, lapping, polishing, milling, shaving, skiving, turning the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B22F2005/001—Cutting tools, earth boring or grinding tool other than table ware

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  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Polishing Bodies And Polishing Tools (AREA)

Abstract

The invention belongs to the technology of cutting tools, and particularly relates to a metal sintering ultrathin cutting knife for cutting a silicon wafer and a preparation method thereof. The silicon wafer is brittle and low in strength, and the upper layer of glass requires a certain strength of the blade, so that the cutting effect of the conventional cutting knife needs to be improved.

Description

Metal sintering ultrathin cutting knife for silicon wafer cutting and preparation method
Technical Field
The invention belongs to the technology of cutting tools, and particularly relates to a metal sintering ultrathin cutting knife for cutting a silicon wafer and a preparation method thereof.
Background
The prior art discloses a preparation method of a superhard diamond grinding wheel, which comprises the steps of weighing raw materials, preparing a mixture A and preparing a mixture B according to parts by weight; the method comprises the steps of preparing a blank, preparing a grinding wheel matrix, preparing a melt for spraying, finishing coating treatment on the surface of the grinding wheel matrix and the like, and the prepared diamond grinding wheel has the characteristics of high hardness and strength, good toughness, wear resistance, good self-sharpening property and the like, and is suitable for large-scale popularization. The prior art discloses a short carbon fiber reinforced resin bond superhard abrasive grinding wheel and a preparation method thereof, wherein a matrix is formed by pressing a short carbon fiber reinforced aluminum powder matrix, and a grinding layer is formed by pressing a short carbon fiber reinforced resin bond and an abrasive; the resin binder of the grinding wheel adopts a mode of mixing high-temperature resin and low-temperature resin; the superhard abrasive adopts a mode of mixing plated diamond and cubic boron nitride. Compared with the conventional grinding wheel, the superhard grinding material grinding wheel disclosed by the invention has the advantages that the limit linear speed is higher, and the rotating speed of the grinding wheel is improved, so that the production efficiency is improved. The silicon chip is used as a material on the basis of solar energy and electronic information, and is divided into necessary steps, and the silicon chip is brittle and low in strength, and a layer of glass is arranged on the silicon chip and requires a blade to have certain strength, so that the cutting effect of a conventional cutting knife needs to be improved; aiming at the silicon chip with glass, the cutting knife in the market is a porous electroforming knife, and the use of a metal-based blade is not seen.
Disclosure of Invention
The invention discloses a metal sintering ultrathin cutting knife for cutting silicon wafers and a preparation method thereof, wherein a low-concentration tin-copper combined formula is adopted, the granularity of diamond is between 1200# and 2000#, part of diamond is replaced by silicon carbide, and carbon fiber is added, so that the cutting of glass can be ensured, the back collapse of a lower silicon wafer can be ensured to meet the requirements of customers, and a porous electroforming knife can be perfectly replaced at present.
The invention adopts the following technical scheme:
a metal sintering ultrathin cutting knife for cutting a silicon wafer is prepared by the following steps of sieving materials and then cold-pressing to obtain a cold-pressed blank; then sintering the cold-pressed green body to obtain a crude product of the cutting knife; finally, performing conventional processing on the crude product of the cutting knife to obtain a metal sintering ultrathin cutting knife for cutting the silicon wafer; the material comprises a metal matrix and diamond.
In the invention, the metal matrix comprises copper powder, tin powder, silicon carbide and carbon fiber, preferably, the metal matrix consists of copper powder, tin powder, silicon carbide and carbon fiber, and further preferably, in the metal matrix, the mass percent of the copper powder is 45-60%, the mass percent of the tin powder is 20-30%, the mass percent of the silicon carbide is 5-15%, and the balance is the carbon fiber; most preferably, in the metal matrix, the mass percent of the copper powder is 50-55%, the mass percent of the tin powder is 23-28%, the mass percent of the silicon carbide is 8-12%, and the balance is carbon fiber. In the metal matrix and the diamond, the mass percent of the diamond is 1.5-3%, preferably 2-2.5%.
According to the invention, copper powder and tin powder are mixed, then silicon carbide is added for mixing, then carbon fiber is added for mixing, then diamond is added, after mixing, the mixture is sieved by a 200-500-mesh sieve, and undersize materials are taken as materials; the cold pressing is 2-3 tons/cm2Maintaining the pressure for 3-7 seconds; and sintering, namely, heating up at the rate of 40-55 ℃/min, keeping the final sintering temperature at 450-500 ℃, preserving the heat for 10-20 minutes, and cooling to room temperature along with a furnace. The conventional processing is the prior art, specifically is inner hole and excircle processing, double-end face thinning processing, and the processing is carried out until the dimensional accuracy required by the drawing is achieved.
Because the silicon chip is brittle and has low strength, and the upper surface of the silicon chip is provided with a layer of glass which requires a certain strength of the blade, the existing cutter is difficult to combine the effective cutting of the silicon chip and the blade, so that the yield is low, the porous electroforming cutter is mostly adopted in the current market, the comprehensive performance of the sintered grinding wheel is difficult to meet the cutting requirement, the scribing cutter prepared by the method adopts a low-concentration tin-combined copper formula, the diamond granularity is between 1200# and 2000#, part of diamond is replaced by silicon carbide, and carbon fiber is added, so that the cutting cutter with good sharpness is obtained, the cutting of the glass can be ensured, the back breakage of the lower silicon chip can be ensured to meet the requirement of customers, and the porous electroforming cutter can be perfectly replaced at present.
Drawings
FIG. 1 is a diagram illustrating the processing effect of a cutter according to an embodiment;
FIG. 2 is a diagram of the effect of the prior cutting knife;
FIG. 3 is a diagram illustrating the processing effect of four cutting blades according to the embodiment;
FIG. 4 is a diagram showing the effect of a cutting knife in a comparative example;
FIG. 5 is a diagram illustrating the processing effect of the cutting knife of the comparative example.
Detailed Description
The raw materials of the invention are conventional raw materials of cutting knives, wherein the particle size of copper powder is 3-5 μm, the particle size of tin powder is 3-5 μm, the particle size of silicon carbide is W1.5, the length of carbon fiber is 150-300 μm, the diameter is 7 μm, and the diamond is 1500# -1800 #. The specific operation and processing experiment is the prior art. In the processing experiment, the processed object is formed by attaching glass and a silicon wafer, wherein the thickness of the glass is 0.5 mm, and the thickness of the silicon layer is 0.5 mm; the processing parameters spindle speed RPM30000, feed speed 5mm/s, cut into UV film 60 μm.
Example one
A metal sintering ultrathin cutting knife for cutting silicon wafers comprises the following metal matrix components in percentage by weight:
copper powder 55%
25% of tin powder
10 percent of silicon carbide
Carbon fiber 10%
(1) Mixing materials: according to the formula requirement, accurately weighed copper powder and tin powder are sequentially placed in a mixing tank to be mixed for 1 hour, then silicon carbide is added to be mixed for 1 hour, then carbon fiber is added to be mixed for 2 hours, finally diamond is added to be mixed for 1 hour, and uniformly mixed materials are obtained, wherein a metal matrix comprises 1960g and 40g of diamond;
(2) and (3) pressing and forming: sieving the material in the step (1) by 300 meshesSieving, taking the undersize material, feeding, pressing and applying pressure of 3 tons/cm2Maintaining the pressure for 5 seconds to prepare a cold-pressed green body;
(3) sintering and forming: placing the blank subjected to cold pressing in the step (2) and the die into a sintering furnace, heating the blank at a rate of 50 ℃/min to a final sintering temperature of 500 ℃, keeping the temperature for 10 minutes, cooling the blank along with the furnace to the room temperature, taking out the blank, and removing burrs for later use;
(4) processing an inner hole and an outer circle: adding a sintered and molded blank, slowly cutting the blank by a wire to the dimensional precision required by the drawing, and removing electric processing burrs by using oilstone;
(5) and (3) thinning and processing of double end faces: and (3) placing the blank after the inner and outer circles are processed in a double-end face thinning machine, and processing the blank by using a grinding wheel disc until the required dimensional precision of the drawing is achieved, so as to obtain the scribing cutter of 56 mm (O.D) X0.1 mm (T) X40 mm (I.D). The processing experiment shows that the service life is 38 slices, and the processing effect is shown in figure 1.
Compared with the conventional porous electroforming cutter which is considered to have good effect in production, the service life of the porous electroforming cutter is 32, and the processing effect is shown in figure 2 and is slightly lower than that of the first embodiment.
The second embodiment is a metal sintering ultrathin cutting knife for cutting silicon chips and a preparation method thereof, wherein the metal matrix comprises the following components in percentage by weight:
50 percent of copper powder
23 percent of tin powder
12 percent of silicon carbide
15 percent of carbon fiber
(1) Mixing materials: according to the formula requirement, accurately weighed copper powder and tin powder are sequentially placed in a mixing tank to be mixed for 1 hour, then silicon carbide is added to be mixed for 1 hour, then carbon fiber is added to be mixed for 2 hours, and finally diamond is added to be mixed for 1 hour to obtain a uniformly mixed material; 1950g of metal matrix and 50g of diamond;
(2) and (3) pressing and forming: sieving the material in the step (1) by a 300-mesh sieve, taking the undersize material, feeding and pressing the undersize material, and applying pressure of 2 tons/cm2Maintaining the pressure for 5 seconds to prepare a cold-pressed green body;
(3) sintering and forming: placing the blank subjected to cold pressing in the step (2) and the die into a sintering furnace, heating to the final sintering temperature of 450 ℃ at the heating rate of 45 ℃/min, keeping the temperature for 20 minutes, cooling to room temperature along with the furnace, taking out, and removing burrs for later use;
(4) processing an inner hole and an outer circle: adding a sintered and molded blank, slowly cutting the blank by a wire to the dimensional precision required by the drawing, and removing electric processing burrs by using oilstone;
(5) and (3) thinning and processing of double end faces: and (3) placing the blank after the inner and outer circles are processed in a double-end face thinning machine, and processing the blank by using a grinding wheel disc until the required dimensional precision of the drawing is achieved, so as to obtain the scribing cutter of 56 mm (O.D) X0.1 mm (T) X40 mm (I.D).
EXAMPLE III
A metal sintering ultrathin cutting knife for cutting silicon wafers and a preparation method thereof are disclosed, wherein the metal matrix comprises the following components in percentage by weight:
45 percent of copper powder
30 percent of tin powder
15 percent of silicon carbide
Carbon fiber 10%
(1) Mixing materials: according to the formula requirement, accurately weighed copper powder and tin powder are sequentially placed in a mixing tank to be mixed for 1 hour, then silicon carbide is added to be mixed for 1 hour, then carbon fiber is added to be mixed for 2 hours, finally diamond is added to be mixed for 1 hour, and uniformly mixed materials are obtained, wherein a metal matrix comprises 1960g and 40g of diamond;
(2) and (3) pressing and forming: sieving the material in the step (1) by a 300-mesh sieve, taking the undersize material, feeding and pressing the undersize material, and applying pressure of 3 tons/cm2Maintaining the pressure for 5 seconds to prepare a cold-pressed green body;
(3) sintering and forming: placing the blank subjected to cold pressing in the step (2) and the die into a sintering furnace, heating the blank at a rate of 50 ℃/min to a final sintering temperature of 500 ℃, keeping the temperature for 10 minutes, cooling the blank along with the furnace to the room temperature, taking out the blank, and removing burrs for later use;
(4) processing an inner hole and an outer circle: adding a sintered and molded blank, slowly cutting the blank by a wire to the dimensional precision required by the drawing, and removing electric processing burrs by using oilstone;
(5) and (3) thinning and processing of double end faces: and (3) placing the blank after the inner and outer circles are processed in a double-end face thinning machine, and processing the blank by using a grinding wheel disc until the required dimensional precision of the drawing is achieved, so as to obtain the scribing cutter of 56 mm (O.D) X0.1 mm (T) X40 mm (I.D). Processing experiments found that the lifetime was 31 chips.
Example four
A metal sintering ultrathin cutting knife for cutting silicon wafers and a preparation method thereof are disclosed, wherein the metal matrix comprises the following components in percentage by weight:
copper powder 60%
20 percent of tin powder
10 percent of silicon carbide
Carbon fiber 10%
(1) Mixing materials: according to the formula requirement, accurately weighed copper powder and tin powder are sequentially placed in a mixing tank to be mixed for 1 hour, then silicon carbide is added to be mixed for 1 hour, then carbon fiber is added to be mixed for 2 hours, finally diamond is added to be mixed for 1 hour, and uniformly mixed materials are obtained, wherein a metal matrix comprises 1960g and 40g of diamond;
(2) and (3) compression molding: sieving the material in the step (1) by a 300-mesh sieve, taking the undersize material, feeding and pressing the undersize material, and applying pressure of 3 tons/cm2Maintaining the pressure for 5 seconds to prepare a cold-pressed green body;
(3) sintering and forming: placing the blank subjected to cold pressing in the step (2) and the die into a sintering furnace, heating up at a rate of 50 ℃/min, heating the room temperature to a final sintering temperature of 500 ℃, preserving heat for 10 minutes, cooling the blank along with the furnace to the room temperature, taking out, and deburring the blank for later use;
(4) processing an inner hole and an outer circle: adding a sintered and molded blank, slowly cutting the blank by a wire to the dimensional precision required by the drawing, and removing electric processing burrs by using oilstone;
(5) and (3) thinning and processing of double end faces: and (3) placing the blank after the inner and outer circles are processed in a double-end face thinning machine, and processing the blank by using a grinding wheel disc until the required dimensional precision of the drawing is achieved, so as to obtain the scribing cutter of 56 mm (O.D) X0.1 mm (T) X40 mm (I.D). The processing experiment found that the service life was 41 pieces, the processing effect is shown in FIG. 3, and the deviation is caused.
EXAMPLE five
A metal sintering ultrathin cutting knife for cutting silicon wafers and a preparation method thereof are disclosed, wherein the metal matrix comprises the following components in percentage by weight:
45 percent of copper powder
35 percent of tin powder
10 percent of silicon carbide
Carbon fiber 10%
(1) Mixing materials: according to the formula requirement, accurately weighed copper powder and tin powder are sequentially placed in a mixing tank to be mixed for 1 hour, then silicon carbide is added to be mixed for 1 hour, then carbon fiber is added to be mixed for 2 hours, finally diamond is added to be mixed for 1 hour, and uniformly mixed materials are obtained, wherein a metal matrix comprises 1960g and 40g of diamond;
(2) and (3) compression molding: sieving the material in the step (1) by a 300-mesh sieve, taking the undersize material, feeding and pressing the undersize material, and applying pressure of 3 tons/cm2Keeping the pressure for 5 seconds to prepare a cold-pressed green body;
(3) sintering and forming: placing the blank subjected to cold pressing in the step (2) and the die into a sintering furnace, heating the blank at a rate of 50 ℃/min to a final sintering temperature of 500 ℃, keeping the temperature for 10 minutes, cooling the blank along with the furnace to the room temperature, taking out the blank, and removing burrs for later use;
(4) processing an inner hole and an outer circle: adding a sintered and molded blank, slowly cutting the blank by a wire to the dimensional precision required by the drawing, and removing electric processing burrs by using oilstone;
(5) and (3) thinning and processing of double end faces: and (3) placing the blank after the inner and outer circles are processed in a double-end face thinning machine, and processing the blank by using a grinding wheel disc until the required dimensional precision of the drawing is achieved, so as to obtain the scribing cutter of 56 mm (O.D) X0.1 mm (T) X40 mm (I.D).
Comparative example 1
A metal sintering ultrathin cutting knife for cutting silicon wafers and a preparation method thereof are disclosed, wherein the metal matrix comprises the following components in percentage by weight:
copper powder 55%
25 percent of nickel powder
10 percent of silicon carbide
Carbon fiber 10%
(1) Mixing materials: according to the formula requirement, accurately weighed copper powder and nickel powder are sequentially placed in a mixing tank to be mixed for 1 hour, then silicon carbide is added to be mixed for 1 hour, then carbon fiber is added to be mixed for 2 hours, finally diamond is added to be mixed for 1 hour, and a uniformly mixed material is obtained, wherein a metal matrix comprises 1960g of metal matrix and 40g of diamond;
(2) and (3) pressing and forming: sieving the material in the step (1) by a 300-mesh sieve, taking the undersize material, feeding and pressing the undersize material, and applying pressure of 3 tons/cm2Maintaining the pressure for 5 seconds to prepare a cold-pressed green body;
(3) sintering and forming: placing the blank subjected to cold pressing in the step (2) and the die into a sintering furnace, heating the blank at a rate of 50 ℃/min to a final sintering temperature of 500 ℃, keeping the temperature for 10 minutes, cooling the blank along with the furnace to the room temperature, taking out the blank, and removing burrs for later use;
(4) processing an inner hole and an outer circle: adding a sintered and molded blank, slowly cutting the blank by a wire to the dimensional precision required by the drawing, and removing electric processing burrs by using oilstone;
(5) and (3) thinning and processing of double end faces: and (3) placing the blank after the inner and outer circles are processed in a double-end face thinning machine, and processing the blank by using a grinding wheel disc until the required dimensional precision of the drawing is achieved, so as to obtain the scribing cutter of 56 mm (O.D) X0.1 mm (T) X40 mm (I.D). The processing experiment shows that the service life is 29 slices, and the processing effect is shown in figure 4.
Comparative example No. two
A metal sintering ultrathin cutting knife for cutting silicon wafers and a preparation method thereof are disclosed, wherein the metal matrix comprises the following components in percentage by weight:
copper powder 55%
25 percent of tin powder
10 percent of alumina
Carbon fiber 10%
(1) Mixing materials: according to the formula requirement, accurately weighed copper powder and tin powder are sequentially placed in a mixing tank to be mixed for 1 hour, then alumina is added to be mixed for 1 hour, then carbon fiber is added to be mixed for 2 hours, finally diamond is added to be mixed for 1 hour, and uniformly mixed materials are obtained, wherein a metal matrix is 1960g and diamond is 40 g;
(2) and (3) compression molding: sieving the material in the step (1) by a 300-mesh sieve, taking the undersize material, feeding and pressing the undersize material, and applying pressure of 3 tons/cm2Keeping the pressure for 5 seconds to prepare a cold-pressed green body;
(3) sintering and forming: placing the blank subjected to cold pressing in the step (2) and the die into a sintering furnace, heating the blank at a rate of 50 ℃/min to a final sintering temperature of 500 ℃, keeping the temperature for 10 minutes, cooling the blank along with the furnace to the room temperature, taking out the blank, and removing burrs for later use;
(4) processing an inner hole and an outer circle: adding a sintered and molded blank, slowly cutting the blank by a wire to the dimensional precision required by the drawing, and removing electric processing burrs by using oilstone;
(5) double-end face thinning processing: and (3) placing the blank after the inner and outer circles are processed in a double-end face thinning machine, and processing the blank by using a grinding wheel disc until the required dimensional precision of the drawing is achieved, so as to obtain the scribing cutter of 56 mm (O.D) X0.1 mm (T) X40 mm (I.D). Processing experiments show that the service life is 33 slices, and the processing effect is 5, which is poor.
Comparative example No. three
A metal sintering ultrathin cutting knife for cutting silicon wafers and a preparation method thereof are disclosed, wherein the metal matrix comprises the following components in percentage by weight:
copper-tin alloy powder (30% tin) 80%
10 percent of silicon carbide
Carbon fiber 10%
(1) Mixing materials: according to the formula requirement, accurately weighed copper-tin alloy powder is placed into a mixing tank to be mixed for 1 hour, then silicon carbide is added to be mixed for 1 hour, then carbon fiber is added to be mixed for 2 hours, finally diamond is added to be mixed for 1 hour, and a uniformly mixed material is obtained, wherein a metal matrix comprises 1960g and 40g of diamond;
(2) and (3) pressing and forming: sieving the material in the step (1) by a 300-mesh sieve, taking the undersize material, feeding and pressing the undersize material, and applying pressure of 3 tons/cm2Maintaining the pressure for 5 seconds to prepare a cold-pressed green body;
(3) sintering and forming: placing the blank subjected to cold pressing in the step (2) and the die into a sintering furnace, heating the blank at a rate of 50 ℃/min to a final sintering temperature of 500 ℃, keeping the temperature for 10 minutes, cooling the blank along with the furnace to the room temperature, taking out the blank, and removing burrs for later use;
(4) processing an inner hole and an outer circle: adding a sintered and molded blank, slowly cutting the blank by a wire to the dimensional precision required by the drawing, and removing electric processing burrs by using oilstone;
(5) and (3) thinning and processing of double end faces: and (3) placing the blank after the inner and outer circles are processed in a double-end face thinning machine, and processing the blank by using a grinding wheel disc until the required dimensional precision of the drawing is achieved, so as to obtain the scribing cutter of 56 mm (O.D) X0.1 mm (T) X40 mm (I.D). Processing experiments found that the lifetime was 26 pieces.
Comparative example No. four
A metal sintering ultrathin cutting knife for cutting silicon wafers and a preparation method thereof are disclosed, wherein the metal matrix comprises the following components in percentage by weight:
copper powder 55%
20 percent of tin powder
5 percent of silver powder
10 percent of silicon carbide
Carbon fiber 10%
(1) Mixing materials: according to the formula requirement, accurately weighed copper powder, tin powder and silver powder are sequentially placed into a mixing tank to be mixed for 1 hour, then silicon carbide is added to be mixed for 1 hour, then carbon fiber is added to be mixed for 2 hours, finally diamond is added to be mixed for 1 hour, and a uniformly mixed material is obtained, wherein a metal matrix is 1960g and diamond is 40 g;
(2) and (3) pressing and forming: sieving the material in the step (1) by a 300-mesh sieve, taking the undersize material, feeding and pressing the undersize material, and applying pressure of 3 tons/cm2Maintaining the pressure for 5 seconds to prepare a cold-pressed green body;
(3) sintering and forming: placing the blank subjected to cold pressing in the step (2) and the die into a sintering furnace, heating the blank at a rate of 50 ℃/min to a final sintering temperature of 500 ℃, keeping the temperature for 10 minutes, cooling the blank along with the furnace to the room temperature, taking out the blank, and removing burrs for later use;
(4) processing an inner hole and an outer circle: adding a sintered and molded blank, slowly cutting the blank by a wire to the dimensional precision required by the drawing, and removing electric processing burrs by using oilstone;
(5) and (3) thinning and processing of double end faces: and (3) placing the blank after the inner and outer circles are processed in a double-end face thinning machine, and processing the blank by using a grinding wheel disc until the required dimensional precision of the drawing is achieved, so as to obtain the scribing cutter of 56 mm (O.D) X0.1 mm (T) X40 mm (I.D). Processing experiments found that the lifetime was 36 pieces.

Claims (10)

1. A metal sintering ultrathin cutting knife for silicon wafer cutting is characterized in that the preparation method of the metal sintering ultrathin cutting knife for silicon wafer cutting comprises the following steps of sieving materials and then cold pressing to obtain a cold-pressed blank; then sintering the cold-pressed green body to obtain a crude product of the cutting knife; finally, performing conventional processing on the crude product of the cutting knife to obtain a metal sintering ultrathin cutting knife for cutting the silicon wafer; the material comprises a metal matrix and diamond.
2. The ultra-thin metal sintered cutting blade for cutting silicon wafers as set forth in claim 1, wherein the metal matrix comprises copper powder, tin powder, silicon carbide, carbon fiber.
3. The ultra-thin metal sintered cutting blade for cutting silicon wafers as set forth in claim 2, wherein the metal matrix is composed of copper powder, tin powder, silicon carbide, and carbon fiber.
4. The metal sintered ultrathin cutting knife for cutting the silicon wafer as claimed in claim 3, wherein the mass percent of the copper powder is 45-60%, the mass percent of the tin powder is 20-30%, the mass percent of the silicon carbide is 5-15%, and the balance is carbon fiber.
5. The metal sintered ultrathin cutting knife for cutting the silicon wafer as claimed in claim 4, wherein the mass percent of the copper powder is 50-55%, the mass percent of the tin powder is 23-28%, the mass percent of the silicon carbide is 8-12%, and the balance is carbon fiber.
6. The metal-sintered ultrathin cutting knife for cutting the silicon wafer as claimed in claim 1, wherein the mass percentage of diamond in the metal matrix and the diamond is 1.5-3%.
7. The use of the metal sintered ultra-thin cutting blade for silicon wafer cutting as set forth in claim 1 in the preparation of a silicon wafer glass cutting tool.
8. The method for preparing the metal sintering ultrathin cutting knife for silicon wafer cutting as claimed in claim 1, characterized by comprising the following steps of sieving materials and then cold-pressing to obtain a cold-pressed green body; then sintering the cold-pressed green body to obtain a crude product of the cutting knife; and finally, performing conventional processing on the crude product of the cutting knife to obtain the metal sintering ultrathin cutting knife for cutting the silicon wafer.
9. The method for preparing the metal sintering ultrathin cutting knife for cutting the silicon wafer as claimed in claim 8, characterized in that copper powder and tin powder are mixed, then silicon carbide is added and mixed, then carbon fiber is added and mixed, then diamond is added and mixed, and then the mixture is sieved by a 200-500-mesh sieve, and undersize materials are taken as materials.
10. The method for preparing the metal sintering ultrathin cutting knife for cutting the silicon wafer as claimed in claim 8, wherein the cold pressing is 2-3 tons/cm2Maintaining the pressure for 3-7 seconds; and sintering, wherein the heating rate is 40-55 ℃/min, the final sintering temperature is 450-500 ℃, the temperature is kept for 10-20 minutes, and the sintering is cooled to room temperature along with a furnace.
CN202111657408.2A 2021-12-31 2021-12-31 Metal sintering ultrathin cutting knife for silicon wafer cutting and preparation method Pending CN114472894A (en)

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