CN114464632A - Near-far infrared wide spectrum superlattice detector - Google Patents
Near-far infrared wide spectrum superlattice detector Download PDFInfo
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Abstract
The invention discloses a near-far infrared wide spectrum superlattice detector, which comprises: a substrate; a buffer layer formed on the substrate; the buffer layer is sequentially laminated with a very-long wave infrared detector, a medium wave infrared detector and a short wave infrared detector; p is arranged between the very-long wave infrared detector and the medium wave infrared detector in sequence+Tunnel junction, N+The tunnel junction enables the very-long wave infrared detector and the medium wave infrared detector to respond simultaneously; and a carrier barrier layer is arranged between the medium-wave infrared detector and the short-wave infrared detector. The detector provided by the invention can simultaneously complete the detection of short infrared band, intermediate infrared band and very long wave infrared band, and meet the requirement of wide spectrum infrared detection of 1-16 mu m. The detector provided by the invention can reduce the dark current of a detector device and improve the detection rate by arranging the very-long-wave channel hole barrier layer and the carrier barrier layer.
Description
Technical Field
At least one embodiment of the invention relates to an infrared detector, and more particularly to a near-far infrared wide spectrum superlattice detector.
Background
The infrared detector with the multi-band detection capability has important significance in high-requirement applications such as target identification, detection and tracking and the like. The Very Long Wave Infrared (VLWIR) detector (the wavelength range is 4.5-16 mu m) is mainly used in the fields of space exploration, satellite remote sensing, missile defense systems, submarine exploration and the like; a Medium Wave Infrared (MWIR) detector (wavelength range 2.53-4.5 μm) can detect the thermal plume, while the Short Wave Infrared (SWIR) band (wavelength range 1-2.53 μm) can detect the reflected light to provide a more intuitive and visible-like image. Multi-band Infrared (IR) photodetectors can combine passive and active imaging to provide detailed, high contrast images that closely resemble visible light perspectives. Compared with a bias modulation multicolor detector, the wide spectrum detector can realize multicolor detection only by using an optical filter technology without matching a complex reading circuit, and therefore, the wide spectrum detector has unique advantages in the aspect of focal plane preparation.
Disclosure of Invention
In view of the above, the present invention provides a near-far infrared wide spectrum superlattice detector for realizing wide infrared spectrum detection.
The invention provides a near-far infrared wide spectrum superlattice detector, which comprises: a substrate; a buffer layer formed on the substrate; the buffer layer is sequentially laminated with a very-long wave infrared detector, a medium wave infrared detector and a short wave infrared detector; a very-long wave infrared detector and a medium wave infrared detector are sequentially arranged betweenP+Tunnel junction, N+The tunnel junction enables the very-long wave infrared detector and the medium wave infrared detector to respond simultaneously; and a carrier barrier layer is arranged between the medium-wave infrared detector and the short-wave infrared detector.
In some embodiments, the VLIW infrared detector includes a VLIW channel absorbing layer, the midwave infrared detector includes a midwave channel absorbing layer, and the shortwave infrared detector includes a shortwave channel absorbing layer.
In some embodiments, the very long wave channel absorber layer is an InAs/GaSb superlattice; the medium wave channel absorption layer is InAs/GaSb superlattice or InAs/InAsSb superlattice; and the short-wave channel absorption layer is made of InAs/GaSb/AlSb/GaSb superlattice or GaSb material.
In some embodiments, the very-long wave infrared detector further comprises a very-long wave channel ohmic contact layer, a very-long wave channel hole barrier layer, and the very-long wave channel hole barrier layer and the very-long wave channel absorption layer are sequentially stacked on the very-long wave channel ohmic contact layer; the band gap of the cavity barrier layer of the very long wave channel is larger than that of the absorption layer of the very long wave channel; the conduction band of the very long wave channel hole barrier layer is equal to or lower than that of the very long wave channel absorption layer; the valence band of the very-long-wave channel hole barrier layer is lower than the valence band of the very-long-wave channel absorption layer.
In some embodiments, the very long wave channel hole barrier layer comprises an InAs/AlSb superlattice or an InAs/GaSb/AlSb/GaSb superlattice; the very-long wave channel hole barrier layer is lightly doped with P type with a doping concentration of 2 × 1016cm-3～1×1017cm-3(ii) a The thickness of the very-long wave channel hole barrier layer is 250 nm-400 nm.
In some embodiments, P is arranged between the VLIW infrared detector and the medium-wave infrared detector on the absorption layer of the VLIW channel in sequence+Tunnel junction, N+A tunnel junction; p+Tunnel junction and N+The tunnel junction comprises an AlSb, InAs/AlSb superlattice or InAs/GaSb/AlSb/GaSb superlattice.
In some embodiments, P+The tunnel junction is heavily doped with P type with a doping concentration of 5 × 1017cm-3～6×1018cm-3；N+The tunnel junction adopts N-type heavy doping with the doping concentration of 2 multiplied by 1018cm-3～1×1019cm-3；P+The thickness of the tunnel junction is 10 nm-20 nm; n is a radical of+The thickness of the tunnel junction is 10 nm-20 nm.
In some embodiments, the conduction band of the carrier barrier layer is higher than the conduction band of the short-wave channel absorption layer and the conduction band of the medium-wave channel absorption layer; the valence band of the carrier barrier layer is lower than the valence band of the short-wave channel absorption layer and the valence band of the medium-wave channel absorption layer.
In some embodiments, the carrier barrier layer comprises an InAs/AlSb superlattice or an InAs/GaSb/AlSb/GaSb superlattice; the thickness of the carrier barrier layer is 400nm to 600 nm.
In some embodiments, the VLP channel absorption layer is lightly doped with P-type dopant concentration of 8 × 1015cm-3～3×1016cm-3(ii) a The medium wave channel absorption layer adopts P type light doping with the doping concentration of 1 multiplied by 1016cm-3～6×1016cm-3(ii) a The short wave channel absorption layer adopts N-type light doping with the doping concentration of 1 multiplied by 1016cm-3～5×1016cm-3。
In some embodiments, the band gap of the very long wave channel absorption layer is 0.08 eV; the band gap of the medium wave channel absorption layer is 0.27 eV; the band gap of the short-wave channel absorption layer is 0.49 eV; the thickness of the very long wave channel absorption layer is 2-3 μm; the thickness of the medium wave channel absorption layer is 2-3 μm; the thickness of the short wave channel absorption layer is 2-3 μm.
In some embodiments, the material of the very long wave channel ohmic contact layer is the same as the material of the very long wave channel hole barrier layer; the ohmic contact layer of the very-long wave channel adopts N-type heavy doping with the doping concentration of 1 multiplied by 1018cm-3～5×1018cm-3(ii) a The thickness of the very-long wave channel ohmic contact layer is 400 nm-600 nm.
In some embodiments, the short-wave infrared detector further comprises a short-wave channel ohmic contact layer disposed on the short-wave channel absorption layer; materials of short wave channel ohmic contact layer andthe materials of the short-wave channel absorption layers are the same; the short-wave channel ohmic contact layer adopts N-type heavy doping with the doping concentration of 1 multiplied by 1018cm-3～5×1018cm-3。
In some embodiments, a cap layer is formed on the short-wave channel ohmic contact layer, the cap layer comprising GaSb material; the cover layer adopts N-type heavy doping with the doping concentration of 1 multiplied by 1018cm-3～5×1018cm-3。
In some embodiments, the above detector further comprises: the lower electrode is manufactured on the buffer layer; an upper electrode formed on the cap layer; the lower electrode and the upper electrode are formed by thermal evaporation or sputtering; the lower and upper electrodes include a Ti/Pt/Au metal layer.
According to the near-far infrared wide spectrum superlattice detector provided by the embodiment of the invention, the superlattice detector comprises 3 infrared absorption channels, namely a short wave channel, a medium wave channel and a very long wave channel, and P is adopted+Tunnel junction and N+The tunnel is firm, the medium-wave channel and the very-long wave channel can simultaneously respond, the detection of short-infrared wave bands, medium-infrared wave bands and very-long wave infrared wave bands can be simultaneously realized, the requirement of wide-spectrum infrared detection of 1-16 mu m is met, the range of absorption wavelength is effectively widened, and the wide-spectrum detection of the detector is realized.
According to the near-far infrared wide spectrum superlattice detector provided by the embodiment of the invention, the dark current of a detector device can be reduced and the detection rate can be improved by arranging the very-long-wave channel hole barrier layer and the carrier barrier layer.
Drawings
FIG. 1 is a schematic diagram of a near-far infrared broad spectrum superlattice detector in accordance with an embodiment of the invention; and
FIG. 2 is a schematic diagram of the energy location of the strip edges of the layers without forming semiconductor contacts according to an embodiment of the invention.
[ description of reference ]
1-a substrate;
2-a buffer layer;
3-very long wave channel ohmic contact layer;
4-very long wave channel hole barrier layer;
5-a very long wave channel absorption layer;
61-P+a tunnel junction;
62-N+a tunnel junction;
7-medium wave channel absorbing layer;
8-carrier barrier layer;
9-short wave channel absorption layer;
10-short wave channel ohmic contact layer;
11-a cap layer;
12-a passivation layer;
13-a lower electrode;
14-upper electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the accompanying drawings in combination with the embodiments.
Currently, the mainstream infrared detector materials include HgCdTe, quantum well and II type superlattice materials. The yield of the HgCdTe material is low, and the yield is poor; the quantum well detector needs to be additionally provided with a grating, so that the process difficulty is increased; the II-class superlattice has the advantages of flexible and adjustable band gap and low Auger recombination rate, and becomes the most potential detector material at present. InAs, GaSb and AlSb all belong to
Have similar lattice constants, which brings natural advantages for the band tuning of the device. By arranging the superlattices with different components, the wide-spectrum infrared detection device with low dark current and high quantum efficiency can be realized.
In view of the above, the present invention provides a near-far infrared wide spectrum superlattice detector, which converts optical signals of different infrared bands into electrical signals simultaneously to realize wide infrared spectrum detection and low dark current of a detector device.
According to an exemplary embodiment of the present invention, the present invention provides a near-far infrared broad spectrumA superlattice detector, as shown with reference to fig. 1, comprising: a substrate 1; a buffer layer 2 formed on the substrate 1; a very long wave infrared detector, a medium wave infrared detector and a short wave infrared detector are sequentially arranged on the buffer layer 2 in a laminated manner; p is arranged between the very-long wave infrared detector and the medium wave infrared detector from bottom to top in sequence+Tunnel junctions 61, N+ A tunnel junction 62, which enables the very-long wave infrared detector and the medium wave infrared detector to respond simultaneously; and a carrier barrier layer 8 is arranged between the medium wave infrared detector and the short wave infrared detector.
According to the embodiment of the invention, the very-long wave infrared detector comprises a very-long wave channel absorption layer 5, the medium wave infrared detector comprises a medium wave channel absorption layer 7, and the short wave infrared detector comprises a short wave channel absorption layer 9; the band gap of the short wave channel absorption layer 9 is larger than that of the medium wave channel absorption layer 7, and the band gap of the medium wave channel absorption layer 7 is larger than that of the very long wave channel absorption layer 5.
According to the embodiment of the invention, the very-long wave channel absorption layer 5 is an InAs/GaSb superlattice; the medium wave channel absorption layer 7 is InAs/GaSb superlattice or InAs/InAsSb superlattice; and the short-wave channel absorption layer 9 is made of InAs/GaSb/AlSb/GaSb superlattice or GaSb material.
According to the embodiment of the invention, the very long wave infrared detector is suitable for detecting infrared light in a very long wave band; the medium wave infrared detector is suitable for detecting infrared light in a medium wave band; the short wave infrared detector is suitable for detecting infrared light in short wave band.
According to an embodiment of the present invention, the above-mentioned near-far infrared wide spectrum superlattice detector further includes: a lower electrode 13 fabricated on the very-long-wave infrared detector; and the upper electrode 14 is manufactured on the short-wave infrared detector.
According to an embodiment of the present invention, the substrate 1 may employ N-type GaSb of (001) crystal orientation.
According to an embodiment of the present invention, a buffer layer 2 is grown on a substrate 1 by using a Molecular Beam Epitaxy (MBE) apparatus, the buffer layer 2 comprises heavily N-doped GaSb with a doping concentration of 1 × 1018cm-3～5×1018cm-3For example, it may be 1 × 1018cm-3。
According to an embodiment of the present invention, the buffer layer 2 has a thickness of 400nm to 600nm, for example, 450 nm.
According to the embodiment of the invention, the material of the very-long wave channel absorption layer 5 can be 16ML InAs/7ML GaSb superlattice, and the very-long wave channel absorption layer 5 adopts P type light doping with the doping concentration of 8 multiplied by 1015cm-3～3×1016cm-3For example, it may be 1 × 1016cm-3. The material composition of the very long wave channel absorption layer 5 is adjusted to make the band gap of the very long wave channel absorption layer 5 about 0.08eV, and the back cut-off wavelength of the detection wavelength range corresponding to the very long wave infrared detector including the very long wave channel absorption layer 5 is about 16 μm according to the corresponding relationship between the band gap and the wavelength.
According to an embodiment of the invention, the very long wave channel absorption layer 5 has a thickness of 2 μm to 3 μm, which may be 2500nm, for example.
According to the embodiment of the invention, the material of the medium wave channel absorption layer 7 can be 8MLInAs/8ML GaSb superlattice, P type light doping is adopted, and the doping concentration is 1 multiplied by 1016cm-3～6×1016cm-3For example, it may be 2 × 1016cm-3. The material composition of the medium-wave channel absorption layer 7 is adjusted so that the band gap of the medium-wave channel absorption layer 7 is about 0.27eV, the corresponding back cut-off wavelength of the detection wavelength range is about 4.5 μm, and the front cut-off wavelength of the detection wavelength range of the very-long-wave infrared detector is covered.
According to an embodiment of the invention, the thickness of the medium wave channel absorbing layer 7 is 2 μm to 3 μm, which may be 2500nm, for example.
According to the embodiment of the invention, the material of the short-wave channel absorption layer 9 can be 8MLInAs/1MLGaSb/5MLAlSb/1MLGaSb superlattice. The short wave channel absorption layer 9 adopts N type light doping with the doping concentration of 1 multiplied by 1016cm-3～5×1016cm-3For example, it may be 5 × 1016cm-3. The material composition of the short-wave channel absorption layer 9 is adjusted so that the band gap of the short-wave channel absorption layer 9 is about 0.49eV, the front cut-off wavelength of the corresponding detection wavelength range is about 1 μm, the rear cut-off wavelength is about 2.53 μm, and the medium-wave red is coveredThe front cutoff wavelength of the detection wavelength range of the outer detector.
According to an embodiment of the invention, the short-wave channel absorption layer 9 has a thickness of 2 μm to 3 μm, which may be 2500nm, for example.
According to the embodiment of the invention, the very-long wave infrared detector further comprises a very-long wave channel ohmic contact layer 3, a very-long wave channel hole barrier layer 4, and the very-long wave channel hole barrier layer 4 and the very-long wave channel absorption layer 5 are sequentially laminated on the very-long wave channel ohmic contact layer 3.
According to an embodiment of the invention, the very long wavelength channel hole barrier layer 4 comprises an InAs/AlSb superlattice or an InAs/GaSb/AlSb/GaSb superlattice; the very-long wave channel hole barrier layer 4 adopts P type light doping with the doping concentration of 2 multiplied by 1016cm-3～1×1017cm-3For example, it may be 3 × 1016cm-3。
According to an embodiment of the invention, the very long wave channel hole barrier layer 4 has a thickness of 250nm to 400nm, for example 350 nm.
According to an embodiment of the present invention, the band gap of the very long wave channel hole barrier layer 4 is larger than that of the very long wave channel absorption layer 5; the conduction band of the very long wave channel hole barrier layer 4 is equal to or lower than that of the very long wave channel absorption layer 5; the valence band of the very-long-wave-channel hole barrier layer 4 is lower than that of the very-long-wave-channel absorption layer 5.
According to an embodiment of the invention, the very long wave channel forms a P π Mn structure, wherein P represents P+The tunnel junction 61, pi represents the very long wave channel absorption layer 5, M represents the very long wave channel hole barrier layer 4, n represents the very long wave channel ohmic contact layer 3, so that the very long wave channel hole barrier layer 4 forms a hole barrier with respect to the very long wave channel absorption layer 5 to block the hole drift of the very long wave channel absorption layer 5 to the lower electrode 13. Specifically, the band gap of the very-long-wave channel hole barrier layer 4 is larger than that of the very-long-wave channel absorption layer 5, the band edge energy of the valence band of the very-long-wave channel hole barrier layer 4 is lower than that of the valence band of the very-long-wave channel absorption layer 5, so that the very-long-wave channel hole barrier layer 4 forms a hole barrier relative to the very-long-wave channel absorption layer 5, and most of the photogeneration of the very-long-wave channel absorption layer 5 is preventedTransport of carrier holes to the lower electrode 13; meanwhile, the band edge energy of the conduction band of the very-long wave channel absorption layer 5 is higher than or equal to that of the conduction band of the very-long wave channel hole barrier layer 4, so that the process of transporting photon-generated minority carrier electrons of the very-long wave channel absorption layer 5 to the lower electrode 13 is not influenced, and the electrons can be collected by the lower electrode 13.
According to the embodiment of the invention, the very-long wave channel ohmic contact layer 3 adopts N-type heavy doping, the very-long wave channel hole barrier layer 4 adopts P-type light doping, so that the very-long wave channel hole barrier layer 4 and the very-long wave channel ohmic contact layer 3 form a PN junction, and a depletion layer of the PN junction between the very-long wave channel absorption layer 5 and the very-long wave channel ohmic contact layer 3 is introduced into the very-long wave channel hole barrier layer 4, so that the depletion layer is far away from the very-long wave channel absorption layer 5, thereby reducing the G-R dark current of a detector device and improving the detection rate.
According to the embodiment of the invention, the very-long wave infrared detector adopts the very-long wave channel hole barrier layer 4, so that the G-R dark current of a detector device can be reduced, and meanwhile, the process of transporting a photon-generated minority carrier to the lower electrode 13 is not influenced, so that the quantum efficiency is ensured, and meanwhile, the high-detection-rate detection of the very-long wave band is realized.
The photogenerated majority carriers in the N-type semiconductor are electrons, and the photogenerated minority carriers are holes; the photogenerated majority carriers in the P-type semiconductor are holes and the photogenerated minority carriers are electrons.
According to the embodiment of the invention, the material of the very long wave channel ohmic contact layer 3 is the same as that of the very long wave channel hole barrier layer 4, so that lattice mismatch cannot be generated at the interface of the two layers, and the hole blocking effect of the very long wave channel hole barrier layer 4 is ensured.
According to an embodiment of the present invention, both the very-long-wavelength channel ohmic contact layer 3 and the very-long-wavelength channel hole barrier layer 4 may employ 18MLInAs/3MLGaSb/5MLAlSb/3MLGaSb superlattices.
According to the embodiment of the invention, the very-long-wave channel ohmic contact layer 3 adopts N type heavy doping with the doping concentration of 1 × 1017cm-3～5×1018cm-3For example, can be1×1018cm-3。
According to the embodiment of the present invention, the thickness of the very long wave channel ohmic contact layer 3 is 400nm to 600nm, and may be 400nm, for example.
According to an embodiment of the present invention, a buffer layer 2 is formed between the substrate 1 and the very long wave channel ohmic contact layer 3 for reducing lattice mismatch of the substrate 1 and the very long wave channel ohmic contact layer 3.
According to the embodiment of the invention, P is also sequentially arranged on the absorption layer 5 of the very-long wave channel between the very-long wave infrared detector and the medium wave infrared detector+Tunnel junctions 61, N+A tunnel junction 62; p+Tunnel junctions 61 and N+The tunnel junction 62 comprises an AlSb, InAs/AlSb superlattice or InAs/GaSb/AlSb/GaSb superlattice.
According to an embodiment of the invention, P+The tunnel junction 61 is heavily doped with P type dopant with a doping concentration of 5 × 1017cm-3～6×1018cm-3For example, it may be 2 × 1018cm-3。
According to an embodiment of the invention, P+The thickness of the tunnel junction 61 is 10nm to 20 nm.
According to an embodiment of the present invention, N+The tunnel junction 62 is heavily doped N-type with a doping concentration of 2 × 1018cm-3～1×1019cm-3For example, it may be 5 × 1018cm-3。
According to an embodiment of the present invention, N+The thickness of the tunnel junction 62 is 10nm to 20 nm.
According to an embodiment of the invention, P+Tunnel junctions 61 and N+The tunnel junction 62 may be made of 7ML InAs/4MLAlSb superlattice; p+Tunnel junctions 61 and N+The total thickness of the tunnel junction 62 is less than 45nm, e.g., P+The tunnel junction may have a thickness of 20nm, N+The tunnel junction may be 20nm thick to ensure that electrons can tunnel from one side of the tunnel junction to the other side of the tunnel junction with a small applied bias.
According to an embodiment of the invention, P+Tunnel junctions 61 and N+The tunnel junction 62 is heavily doped, reducedThe resistance of the electrons during tunneling is small to obtain a larger tunneling current, so that the photo-generated minority carrier electrons of the medium wave channel absorption layer 7 are more easily collected by the lower electrode 13.
According to an embodiment of the invention, P+Tunnel junction and N+The tunnel junctions adopt doping with different polarities, so that PN junctions of the medium-wave infrared detector and the very-long-wave infrared detector are ensured to be in a forward bias state or a reverse bias state at the same time under the same bias voltage, the simultaneous response of a medium-wave channel and a very-long-wave channel is realized, and the requirement of wide spectrum detection of the medium-wave band and the very-long-wave band is met; wherein, the PN junction of the medium wave infrared detector comprises a medium wave channel absorption layer 7 and N+Tunnel junction 62, PN junction of very long wave infrared detector including P+Tunnel junction 61, very long wave channel absorption layer 5, very long wave channel hole barrier layer 4, and very long wave channel ohmic contact layer 3.
According to the embodiment of the invention, when a negative bias is applied to the upper electrode 14 (a negative potential is applied to the upper electrode 14, and a positive potential is applied to the lower electrode 13), photogenerated minority carrier electrons of the medium-wave channel absorption layer 7 and the very-long-wave channel absorption layer 5 are simultaneously collected by the lower electrode 13, so that the simultaneous response of the medium-wave channel and the very-long-wave channel is realized.
According to the embodiment of the invention, a carrier barrier layer 8 is also arranged on the medium wave channel absorption layer 7 between the medium wave infrared detector and the short wave infrared detector; the conduction band of the carrier barrier layer 8 is higher than the conduction band of the short wave channel absorption layer 9 and the conduction band of the medium wave channel absorption layer 7; the valence band of the carrier barrier layer 8 is lower than the valence band of the short-wave channel absorption layer 9 and the valence band of the medium-wave channel absorption layer 7.
According to an embodiment of the present invention, the carrier barrier layer 8 includes an InAs/AlSb superlattice or an InAs/GaSb/AlSb/GaSb superlattice, and the thickness of the carrier barrier layer 8 is 400nm to 600 nm.
According to the embodiment of the invention, the material of the carrier barrier layer 8 can be 4ML InAs/1ML GaSb/5ML AlSb/1ML GaSb superlattice, and the thickness can be 500 nm.
Referring to fig. 1 and 2, the band edge energy of the conduction band of the carrier barrier layer 8 is higher than that of the medium wave channel absorption layerBand edge energy of conduction bands of 7 and the short wave channel absorption layer 9, band edge energy of a valence band of the carrier barrier layer 8 is lower than band edge energy of valence bands of the medium wave channel absorption layer 7 and the short wave channel absorption layer 9, the carrier barrier layer 8, the medium wave channel absorption layer 7 and the short wave channel absorption layer 9 form an N-i-B-i-N structure, wherein the N-i-B-i-N structure sequentially comprises N+The tunnel junction 62, the medium wave channel absorption layer 7, the carrier barrier layer 8, the short wave channel absorption layer 9 and the short wave channel ohmic contact layer 10 regulate and control the type of the photon-generated minority carriers in the two i regions (the medium wave channel absorption layer 7 and the short wave channel absorption layer 9) through doping, so that the photon-generated minority carriers in the two regions are simultaneously collected under bias voltage with the same polarity, and the wide spectral response of the short wave band and the medium wave band is realized.
According to the embodiment of the invention, the short-wave channel absorption layer 9 adopts N-type light doping, and the photon-generated minority carriers of the short-wave channel absorption layer 9 are holes; the medium wave channel absorption layer 7 is lightly doped with P type, and photon-generated minority carriers of the medium wave channel absorption layer 7 are electrons. The short wave channel absorption layer 9 and the medium wave channel absorption layer 7 form photon-generated minority carriers with different polarities, and when bias voltage with the same polarity is applied, the photon-generated minority carriers with different polarities drift to electrodes with different polarities respectively and are collected by the electrodes with different polarities respectively.
According to the embodiment of the invention, when a negative bias is applied to the upper electrode 14 (a negative potential is applied to the upper electrode 14, and a positive potential is applied to the lower electrode 13), photogenerated minority carrier holes of the short-wave channel absorption layer 9 drift to the upper electrode 14 and are collected by the upper electrode 14, photogenerated minority carrier electrons of the medium-wave channel absorption layer 7 drift to the lower electrode 13 and are collected by the lower electrode 13, namely, the photogenerated minority carriers of the short-wave channel and the medium-wave channel are respectively and simultaneously collected by the upper electrode 14 and the lower electrode 13, so that the simultaneous response of the short-wave channel and the medium-wave channel is realized.
The carrier barrier layer 8 forms an electron barrier with respect to the medium-wave channel absorption layer 7, and blocks photon-generated minority carrier electrons of the medium-wave channel absorption layer 7 from drifting toward the short-wave channel absorption layer 9; the carrier barrier layer 8 forms a hole barrier with respect to the short-wavelength channel absorption layer 9, and blocks a photogenerated minority carrier hole of the short-wavelength channel absorption layer 9 from drifting toward the medium-wavelength channel absorption layer 7.
According to the embodiment of the present invention, since the conduction band of the carrier barrier layer 8 is higher than the conduction band of the short wave channel absorption layer 9 and the conduction band of the medium wave channel absorption layer 7; the valence band of the carrier barrier layer 8 is lower than the valence band of the short-wave channel absorption layer 9 and the valence band of the medium-wave channel absorption layer 7, so that the majority carrier holes of the medium-wave channel absorption layer 7 cannot drift to the short-wave channel absorption layer 9, and the majority carrier electrons of the short-wave channel absorption layer 9 cannot drift to the medium-wave channel absorption layer 7. By blocking the transmission of majority carriers, the dark current of the detector device can be reduced, and the detection rate is improved.
According to an embodiment of the present invention, the short wave infrared detector further includes a short wave channel ohmic contact layer 10, and the short wave channel ohmic contact layer 10 is disposed on the short wave channel absorption layer 9.
According to the embodiment of the invention, the material of the short-wave channel ohmic contact layer 10 is InAs/GaSb/AlSb/GaSb superlattice or GaSb. The short-wave channel ohmic contact layer 10 and the short-wave channel absorption layer 9 are made of the same material, for example, the short-wave channel absorption layer 9 and the short-wave channel ohmic contact layer 10 can be made of 8ML InAs/1ML GaSb/5ML AlSb/1ML GaSb superlattices.
According to the embodiment of the invention, the short-wave channel ohmic contact layer 10 adopts N-type heavy doping with the doping concentration of 1 × 1018cm-3～5×1018cm-3For example, it may be 3 × 1018cm-3。
According to an embodiment of the present invention, the thickness of the short wave channel ohmic contact layer 10 may be, for example, 350 nm.
According to the embodiment of the invention, the near-far infrared wide spectrum superlattice detector further comprises a cover layer 11, the cover layer 11 is formed on the short-wave channel ohmic contact layer 10, the cover layer 11 comprises a GaSb material, the cover layer 11 is heavily doped in an N type, and the doping concentration is 1 multiplied by 1018cm-3～5×1018cm-3For example, it may be 3 × 1018cm-3. The thickness of the cap layer 11 may be 50 nm.
According to an embodiment of the present invention, a very long wave channel ohmic contact layer 3, a very long wave channel hole barrier layer 4, a very long wave channel absorption layer 5, P+Tunnel junctions 61, N+The tunnel junction 62, the medium wave channel absorption layer 7, the carrier barrier layer 8, the short wave channel absorption layer 9, the short wave channel ohmic contact layer 10 and the cover layer 11 form a table surface relative to the buffer layer 2, and the passivation layers 12 are formed on two sides of the table surface.
According to embodiments of the invention, electrochemical sulfidation or physical deposition of SiO is used2/Si3N4Passivation layers 12 are formed on two sides of the table top in a dielectric layer mode so as to reduce surface leakage current of the detector device.
According to an embodiment of the present invention, an upper electrode 14 is formed on the cap layer 11, a lower electrode 13 is formed on the buffer layer 2, and the lower electrode 13 is electrically contacted with the very-long-wave channel ohmic contact layer 3 through the buffer layer 2. The lower electrode 13 and the upper electrode 14 are formed by thermal evaporation or sputtering; the lower electrode 13 and the upper electrode 14 include a Ti/Pt/Au metal layer.
According to an embodiment of the present invention, applying a negative bias to the upper electrode 14 induces an electric field in the VLR, MID, and SW infrared detectors. The infrared light incident on the detector is absorbed by the very long wave channel absorption layer 5, the medium wave channel absorption layer 7 and the short wave channel absorption layer 9 of the very long wave infrared detector, the medium wave infrared detector and the short wave infrared detector. Under the action of an electric field, photo-generated minority carrier holes generated by a short wave channel absorption layer 9 of the short wave infrared detector are collected by an upper electrode 14, photo-generated minority carrier electrons generated by the medium wave infrared detector and the very long wave infrared detector are collected by a lower electrode 13 at the same time, and photocurrent is generated, so that the detection of infrared light of different wave bands is realized.
According to the near-far infrared wide spectrum superlattice detector provided by the embodiment of the invention, the near-far infrared wide spectrum superlattice detector comprises 3 infrared absorption channels which are respectively a short wave channel, a medium wave channel and a very long wave channel, the short wave channel and the medium wave channel form an n-i-B-i-n structure by adopting a carrier barrier layer, and photogenerated minority carriers of a medium wave channel absorption layer and a short wave channel absorption layer are not generatedThe same type can realize the simultaneous response of the short wave channel and the medium wave channel; by using P+Tunnel junction and N+The tunnel is firm, and the medium wave channel and the very long wave channel simultaneously respond, so that the detection of short infrared wave bands, medium infrared wave bands and very long wave infrared wave bands can be simultaneously realized, the requirement of wide spectrum infrared detection of 1-16 mu m is met, the range of absorption wavelength is effectively widened, and the wide spectrum detection of the detector is realized.
According to the near-far infrared wide spectrum superlattice detector provided by the embodiment of the invention, the ohmic contact layer of the very long wave channel adopts N-type heavy doping, the hole barrier layer of the very long wave channel adopts P-type light doping, so that the hole barrier layer of the very long wave channel and the ohmic contact layer of the very long wave channel form a PN junction, and a depletion layer of the PN junction between the absorption layer of the very long wave channel and the ohmic contact layer of the very long wave channel is introduced into the hole barrier layer of the very long wave channel, so that the depletion layer is far away from the absorption layer of the very long wave channel, thereby reducing the G-R dark current of a detector device and improving the detection rate.
According to the near-far infrared wide spectrum superlattice detector provided by the embodiment of the invention, through designing the band gaps of the medium-wave channel absorption layer, the carrier barrier layer and the short-wave channel absorption layer, the majority carrier holes of the medium-wave channel absorption layer cannot drift to the short-wave channel absorption layer, and the majority carrier electrons of the short-wave channel absorption layer cannot drift to the medium-wave channel absorption layer. By blocking the transmission of majority carriers, the dark current of the detector device can be reduced, and the detection rate is improved.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A near-far infrared wide spectrum superlattice detector, comprising:
a substrate (1);
a buffer layer (2) formed on the substrate (1);
the very-long wave infrared detector, the medium wave infrared detector and the short wave infrared detector are sequentially arranged on the buffer layer (2) in a laminated mode;
p is sequentially arranged between the very-long wave infrared detector and the medium wave infrared detector+Tunnel junction (61), N+A tunnel junction (62) for enabling the very-long wave infrared detector to respond simultaneously with the medium wave infrared detector;
and a carrier barrier layer (8) is arranged between the medium wave infrared detector and the short wave infrared detector.
2. The detector according to claim 1, characterized in that the VLR infrared detector comprises a VLR channel absorbing layer (5), the mid-wave infrared detector comprises a mid-wave channel absorbing layer (7), the short-wave infrared detector comprises a short-wave channel absorbing layer (9);
preferably, the very-long-wave channel absorption layer (5) is an InAs/GaSb superlattice;
the medium wave channel absorption layer (7) is an InAs/GaSb superlattice or an InAs/InAsSb superlattice; and
the short-wave channel absorption layer (9) is made of InAs/GaSb/AlSb/GaSb superlattice or GaSb materials.
3. The detector according to claim 2, wherein the VLR infrared detector further comprises a VLR channel ohmic contact layer (3), a VLR channel hole barrier layer (4), the VLR channel absorption layer (5) being sequentially laminated on the VLR channel ohmic contact layer (3);
the band gap of the very long wave channel hole barrier layer (4) is larger than that of the very long wave channel absorption layer (5);
the conduction band of the very long wave channel hole barrier layer (4) is equal to or lower than that of the very long wave channel absorption layer (5);
the valence band of the very-long wave channel hole barrier layer (4) is lower than that of the very-long wave channel absorption layer (5);
preferably, the very long wave channel hole barrier layer (4) comprises an InAs/AlSb superlattice or an InAs/GaSb/AlSb/GaSb superlattice;
preferably, the very-long-wave channel hole barrier layer (4) adopts P type light doping with the doping concentration of 2 multiplied by 1016cm-3～1×1017cm-3；
Preferably, the thickness of the very-long wave channel hole barrier layer (4) is 250 nm-400 nm.
4. Detector according to claim 2, characterised in that the P is arranged in succession on the absorption layer (5) of the very-long-wave channel between the very-long-wave infrared detector and the medium-wave infrared detector+A tunnel junction (61), the N+A tunnel junction (62);
the P is+A tunnel junction (61) and the N+The tunnel junction (62) includes an AlSb, InAs/AlSb superlattice or InAs/GaSb/AlSb/GaSb superlattice.
5. The probe of claim 4, wherein P is+The tunnel junction (61) adopts P-type heavy doping with the doping concentration of 5 multiplied by 1017cm-3～6×1018cm-3；
Said N is+The tunnel junction (62) is heavily doped N-type with a doping concentration of 2 × 1018cm-3～1×1019cm-3；
Preferably, said P+The thickness of the tunnel junction (61) is 10 nm-20 nm;
preferably, said N is+The thickness of the tunnel junction (62) is 10nm to 20 nm.
6. The detector according to claim 2, characterized in that the conduction band of the carrier barrier layer (8) is higher than the conduction band of the shortwave channel absorption layer (9) and the conduction band of the midwave channel absorption layer (7);
the valence band of the carrier barrier layer (8) is lower than the valence band of the short-wave channel absorption layer (9) and the valence band of the medium-wave channel absorption layer (7);
preferably, the carrier barrier layer (8) comprises an InAs/AlSb superlattice or an InAs/GaSb/AlSb/GaSb superlattice;
preferably, the thickness of the carrier barrier layer (8) is 400nm to 600 nm.
7. The detector according to claim 2, characterized in that the VLC absorption layer (5) is lightly doped with P-type dopant concentration of 8 x 1015cm-3～3×1016cm-3；
The medium wave channel absorption layer (7) adopts P type light doping with the doping concentration of 1 multiplied by 1016cm-3～6×1016cm-3；
The short wave channel absorption layer (9) adopts N type light doping with the doping concentration of 1 multiplied by 1016cm-3～5×1016cm-3。
8. A detector according to claim 7, characterized in that the band gap of the very long wave channel absorption layer (5) is 0.08 eV;
the band gap of the medium wave channel absorption layer (7) is 0.27 eV;
the band gap of the short-wave channel absorption layer (9) is 0.49 eV;
preferably, the thickness of the very-long wave channel absorption layer (5) is 2-3 μm;
preferably, the thickness of the medium wave channel absorption layer (7) is 2-3 μm;
preferably, the short-wave channel absorption layer (9) has a thickness of 2 to 3 μm.
9. A detector according to claim 3, characterized in that the material of the very long wave channel ohmic contact layer (3) is the same as the material of the very long wave channel hole barrier layer (4);
the very-long wave channel ohmic contact layer (3) adopts N-type heavy doping with the doping concentration of 1 multiplied by 1018cm-3～5×1018cm-3；
The thickness of the very-long wave channel ohmic contact layer (3) is 400 nm-600 nm;
the short-wave infrared detector further comprises a short-wave channel ohmic contact layer (10), and the short-wave channel ohmic contact layer (10) is arranged on the short-wave channel absorption layer (9);
the short wave channel ohmic contact layer (10) is made of the same material as the short wave channel absorption layer (9);
the short-wave channel ohmic contact layer (10) adopts N-type heavy doping with the doping concentration of 1 multiplied by 1018cm-3～5×1018cm-3；
Preferably, a cover layer (11) is formed on the short-wave channel ohmic contact layer (10), and the cover layer comprises GaSb material;
the cover layer (11) adopts N-type heavy doping with the doping concentration of 1 multiplied by 1018cm-3～5×1018cm-3。
10. The probe of claim 9, further comprising:
a lower electrode (13) formed on the buffer layer (2);
an upper electrode (14) formed on the cap layer (11);
preferably, the lower electrode (13) and the upper electrode (14) are formed by thermal evaporation or sputtering;
the lower electrode (13) and the upper electrode (14) comprise a Ti/Pt/Au metal layer.
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| CN117393632B (en) * | 2023-12-12 | 2024-04-16 | 长春理工大学 | Wide-spectrum quantum dot photoelectric detector and preparation method thereof |
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