CN117393632A - Wide-spectrum quantum dot photoelectric detector and preparation method thereof - Google Patents
Wide-spectrum quantum dot photoelectric detector and preparation method thereof Download PDFInfo
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- CN117393632A CN117393632A CN202311696515.5A CN202311696515A CN117393632A CN 117393632 A CN117393632 A CN 117393632A CN 202311696515 A CN202311696515 A CN 202311696515A CN 117393632 A CN117393632 A CN 117393632A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
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- DHBXNPKRAUYBTH-UHFFFAOYSA-N 1,1-ethanedithiol Chemical compound CC(S)S DHBXNPKRAUYBTH-UHFFFAOYSA-N 0.000 claims description 3
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- 238000001514 detection method Methods 0.000 description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
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Abstract
The invention relates to a wide-spectrum quantum dot photoelectric detector and a preparation method thereof; the bottom electrode is arranged on one side of the substrate, the hole transport layer is arranged on one side of the bottom electrode, which is away from the substrate, the quantum dot layer is arranged on one side of the hole transport layer, which is away from the bottom electrode, the electron transport layer is arranged on one side of the quantum dot layer, which is away from the hole transport layer, and the top electrode is arranged on one side of the electron transport layer, which is away from the quantum dot layer; the quantum dot layer comprises a medium wave infrared quantum dot layer, a short wave infrared quantum dot layer and a visible light-near infrared quantum dot layer, wherein the medium wave infrared quantum dot layer is arranged on one side of the hole transmission layer, which is away from the bottom electrode, the short wave infrared quantum dot layer is arranged on one side of the medium wave infrared quantum dot layer, which is away from the hole transmission layer, and the visible light-near infrared quantum dot layer is arranged between the short wave infrared quantum dot layer and the electron transmission layer.
Description
Technical Field
The invention relates to the technical field of detectors, in particular to a wide-spectrum quantum dot photoelectric detector and a preparation method thereof.
Background
The wide-spectrum infrared detector is mainly used for converting infrared light signals into electric signals, and further realizing quantitative measurement, analysis and imaging of infrared light. The infrared light can be classified into near infrared (0.7-1.1 microns), short wave infrared (1.1-2.5 microns), medium wave infrared (3-5 microns) and long wave infrared (8-12 microns) according to wavelength. The conventional infrared detector is usually only sensitive to infrared light in a single wave band, and the invention provides a wide-spectrum infrared detector which can respond to infrared light in the range of 1-12 microns. Can play a role in the fields of optical communication, infrared imaging, spectrum analysis and the like;
most of the existing infrared detectors adopt materials such as indium gallium arsenic, tellurium cadmium mercury, indium antimonide, and second-class superlattice which are grown by molecular beam epitaxy. The detection band of the material is regulated by regulating the proportion of molecular elements, and the response range is usually single-band infrared, for example, the response band of InGaAs is 1-1.7 microns, the response band of InSb is 3-5 microns, and the response band of Te-Cd-Hg is 3-5 microns or 8-12 microns.
Stacking single band materials to form a multiple band gap material vertical stack is a necessary means to achieve broad spectrum detection. However, the conventional molecular beam epitaxy material cannot realize epitaxial growth of materials with different wavebands due to larger material lattice constant difference between different response wavebands.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the defects in the prior art, thereby providing a wide-spectrum quantum dot photoelectric detector and a preparation method thereof.
A broad spectrum quantum dot photodetector comprising: a substrate, a bottom electrode, a hole transport layer, a quantum dot layer, an electron transport layer and a top electrode;
the bottom electrode is arranged on one side of the substrate, the hole transport layer is arranged on one side of the bottom electrode, which is away from the substrate, the quantum dot layer is arranged on one side of the hole transport layer, which is away from the bottom electrode, the electron transport layer is arranged on one side of the quantum dot layer, which is away from the hole transport layer, and the top electrode is arranged on one side of the electron transport layer, which is away from the quantum dot layer;
the quantum dot layer includes: the device comprises a hole transmission layer, a middle wave infrared quantum dot layer, a short wave infrared quantum dot layer and a visible light-near infrared quantum dot layer, wherein the absorption wave band of the middle wave infrared quantum dot layer is 2.5-5 microns, the middle wave infrared quantum dot layer is arranged on one side of the hole transmission layer, which is away from the bottom electrode, the absorption wave band of the short wave infrared quantum dot layer is 0.8-2.5 microns, the short wave infrared quantum dot layer is arranged on one side of the middle wave infrared quantum dot layer, which is away from the hole transmission layer, the absorption wave band of the visible light-near infrared quantum dot layer is 0.4-0.8 microns, and the visible light-near infrared quantum dot layer is arranged between the short wave infrared quantum dot layer and the electron transmission layer.
Further, the medium wave infrared quantum dot layer is an HgTe quantum dot layer;
the short wave infrared quantum dot layer is an HgTe quantum dot layer;
the visible light-near infrared quantum dot layer is a PbS quantum dot layer.
Further, the typical film thickness of the medium wave infrared quantum dot layer is 300 nanometers;
the typical film thickness of the short wave infrared quantum dot layer is 300 nanometers;
the typical film thickness of the visible-near infrared quantum dot layer is 300 nanometers.
Further, the substrate is prepared from silicon chips, sapphire or flexible resin;
the preparation material of the bottom electrode is ITO or AZO;
the hole transport layer is prepared from MoO3 or Pedot: pss;
the electron transport layer is prepared from ZnO;
the preparation material of the top electrode comprises metal and conductive oxide.
Further, the metal is gold, silver, copper or titanium;
the conductive oxide is ITO or FTO.
Further, the typical thickness of the bottom electrode is 150-200 microns;
the typical thickness of the hole transport layer is 10 nanometers when the preparation material of the hole transport layer is MoO3, and the preparation material of the hole transport layer is Pedot: typical thickness at Pss is 40 nm;
the electron transport layer typically has a thickness of 40 nanometers;
the typical thickness of the top electrode is 5-10 nanometers.
The invention relates to a preparation method of a wide-spectrum quantum dot photoelectric detector, which is used for preparing the detector of any one of the above steps; the method comprises the following steps:
s1: providing a substrate, sputtering ITO or AZO onto the substrate by a magnetron sputtering technology, and processing TO or AZO by a wet etching mode TO obtain a typical bottom electrode;
s2: moO3 or Pedot: deposition of Pss onto the bottom electrode prepared in S1 forms a layer of MoO3 or Pedot: a ps layer, i.e., a hole transport layer;
s3: depositing HgTe quantum dots with absorption wave bands of 2.5-5 microns on the hole transport layer in a spin coating mode to form a quantum dot layer, and treating the HgTe quantum dot layer with the absorption wave bands of 2.5-5 microns by a treatment solution to obtain a medium wave infrared quantum dot layer;
s4: depositing HgTe quantum dots with absorption wave bands of 0.8-2.5 microns on the medium-wave infrared quantum dot layer in a spin coating mode to form a quantum dot layer, and treating the HgTe quantum dot layer with the absorption wave bands of 0.8-2.5 microns by a treatment solution to obtain a short-wave infrared quantum dot layer;
s5: depositing PbS quantum dots with absorption wave bands of 0.4-0.8 micrometers on the short-wave infrared quantum dot layer by a spin coating mode to form a quantum dot layer, and treating the PbS quantum dot layer with the absorption wave bands of 0.4-0.8 micrometers by a treatment solution to obtain a visible light-near infrared quantum dot layer;
s6: spin-coating 40mg/ml ZnO solution on one side of the visible light-near infrared quantum dot layer far away from the short wave infrared quantum dot layer to form a film, wherein the spin-coating rotating speed is 2000 rpm, and heating and annealing the film for 10 minutes at 80 ℃ after spin-coating to obtain an electron transport layer;
s7: and processing gold, silver, copper, titanium, ITO and FTO by means of electron beam evaporation, magnetron sputtering or thermal evaporation coating to form a top electrode, and arranging the top electrode on one side of the electron transmission layer, which is away from the visible light-near infrared quantum dot layer.
Further, the treatment solutions in S3, S4 and S5 are all ethanedithiol solutions.
The technical scheme of the invention has the advantages that: the detector provided by the invention comprises a top electrode, an electron transmission layer, a visible light-near infrared quantum dot layer, a short wave infrared quantum dot layer, a medium wave infrared quantum dot layer, a hole transmission layer, a bottom electrode and a substrate, is a vertical photovoltaic device structure, an electric field is formed by applying bias between the top electrode and the bottom electrode, incident infrared light is incident from the top electrode and is sequentially absorbed by the visible light, the short wave infrared and the medium wave infrared quantum dots, compared with the detectors of indium gallium arsenide (response wave band is 1-1.7 microns), indium antimonide (response wave band is 3-5 microns), mercury cadmium telluride (response wave band is 3-5 microns) and the like, the detector provided by the invention can realize a wide spectral response of 0.4-5 microns by adopting a single device, greatly expands the response range of the device, and can obtain more optical information in the aspects of spectral imaging and the like.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural view of the present invention.
Reference numerals illustrate:
1-a substrate; 2-a bottom electrode; a 3-hole transport layer;
4-a medium wave infrared quantum dot layer; 5-a short wave infrared quantum dot layer;
6-a visible light-near infrared quantum dot layer; 7-an electron transport layer;
8-top electrode.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
Referring to fig. 1, a wide spectrum quantum dot photodetector includes: a substrate 1, a bottom electrode 2, a hole transport layer 3, a quantum dot layer, an electron transport layer 7 and a top electrode 8;
the bottom electrode 2 is arranged on one side of the substrate 1, the hole transport layer 3 is arranged on one side of the bottom electrode 2, which is away from the substrate 1, the quantum dot layer is arranged on one side of the hole transport layer 3, which is away from the bottom electrode 2, the electron transport layer 7 is arranged on one side of the quantum dot layer, which is away from the hole transport layer 3, and the top electrode 8 is arranged on one side of the electron transport layer 7, which is away from the quantum dot layer;
the quantum dot layer includes: the infrared quantum dot layer 4 of medium wave, the infrared quantum dot layer 5 of shortwave and visible light-near infrared quantum dot layer 6, the absorption wave band of the infrared quantum dot layer 4 of medium wave is 2.5~5 microns, the infrared quantum dot layer 4 of medium wave sets up in hole transport layer 3 and deviates from bottom electrode 2 one side, the absorption wave band of the infrared quantum dot layer 5 of shortwave is 0.8~2.5 microns, the infrared quantum dot layer 5 of shortwave sets up in the infrared quantum dot layer 4 of medium wave and deviates from hole transport layer 3 one side, the absorption wave band of visible light-near infrared quantum dot layer 6 is 0.4~0.8 microns, the visible light-near infrared quantum dot layer 6 sets up between the infrared quantum dot layer 5 of shortwave and electron transport layer 7.
The laser device is a vertical photovoltaic device structure, an electric field is formed by applying bias between the top electrode 8 and the bottom electrode 2, incident infrared light is incident from the top electrode 8 and is sequentially absorbed by the visible light-near infrared quantum dot layer 6, the short wave infrared quantum dot layer 5 and the medium wave infrared quantum dot layer 4, so that detection of incident light with a wide spectrum range of 0.4-5 microns is realized.
The invention provides a preparation method of a wide-spectrum infrared detector by adopting colloidal quantum dots, wherein the colloidal quantum dots are semiconductor nanocrystals, and the typical size is 5-15 nanometers. The response wavelength is gradually prolonged along with the increase of the size of the quantum dot, the typical wave band of the 5 nanometer quantum dot is near infrared and short wave infrared, the typical wave band of the 8-10 nanometer quantum dot is 3-5 microns, and the typical wave band of the 10-15 nanometer quantum dot is 8-12 microns. The quantum dots are synthesized by wet chemistry, the synthesized quantum dots can be stably suspended in a solvent, and liquid quantum dots can be coated on a substrate (silicon wafer, sapphire, TFT panel, readout circuit and the like) by a liquid phase processing method such as spin coating, drop coating, knife coating and the like to become a solid film with light response. Because the quantum dots are dispersed nano particles, stress can be automatically released in the film forming process, so that vertical stacking of materials with different band gaps is realized, and a wide spectral response is obtained.
In this embodiment, the medium-wave infrared quantum dot layer 4 is an HgTe quantum dot layer;
the short wave infrared quantum dot layer 5 is an HgTe quantum dot layer;
the visible light-near infrared quantum dot layer 6 is a PbS quantum dot layer.
In this embodiment, the typical film thickness of the medium-wave infrared quantum dot layer 4 is 300 nm;
the typical film thickness of the short wave infrared quantum dot layer 5 is 300 nanometers;
the typical film thickness of the visible-near infrared quantum dot layer 6 is 300 nm.
In this embodiment, the substrate 1 is made of silicon wafer, sapphire or flexible resin;
the preparation material of the bottom electrode 2 is ITO or AZO;
the hole transport layer 3 is made of MoO 3 Or Pedot: pss;
the electron transport layer 7 is prepared from ZnO;
the top electrode 8 is made of a material including a metal and a conductive oxide.
In this embodiment, the metal is gold, silver, copper or titanium;
the conductive oxide is ITO or FTO.
In this embodiment, the typical thickness of the bottom electrode 2 is 150-200 micrometers;
the hole transport layer 3 is made of MoO 3 Typical thickness is 10 nm, and the hole transport layer 3 is made of Pedot: typical thickness at Pss is 40 nm;
the electron transport layer 7 has a typical thickness of 40 nm;
the top electrode 8 has a typical thickness of 5-10 nm.
The invention also comprises a preparation method of the wide-spectrum quantum dot photoelectric detector, wherein the method is used for preparing the detector; the method comprises the following steps:
s1: providing a substrate 1, sputtering ITO or AZO onto the substrate 1 by a magnetron sputtering technology, and processing TO or AZO by a wet etching mode TO obtain a typical bottom electrode 2;
s2: moO is carried out 3 (Electron Beam evaporation, magnetron sputtering, thermal vapor plating)Film) or Pedot: pss (spin coating, spray coating, drop coating, etc.) are deposited onto the bottom electrode 2 prepared in S1 to form MoO 3 Layer or Pedot: the ps layer, i.e., the hole transport layer 3;
s3: depositing HgTe quantum dots with absorption wave bands of 2.5-5 microns on the hole transport layer 3 in a spin coating mode to form a quantum dot layer, and treating the HgTe quantum dot layer with absorption wave bands of 2.5-5 microns by a treatment solution to obtain a medium wave infrared quantum dot layer 4;
s4: depositing HgTe quantum dots with absorption wave bands of 0.8-2.5 microns on the medium-wave infrared quantum dot layer 4 in a spin coating mode to form a quantum dot layer, and treating the HgTe quantum dot layer with the absorption wave bands of 0.8-2.5 microns by a treatment solution to obtain a short-wave infrared quantum dot layer 5;
s5: depositing PbS quantum dots with absorption wave bands of 0.4-0.8 micrometers on the short-wave infrared quantum dot layer 5 by a spin coating mode to form a quantum dot layer, and treating the PbS quantum dot layer with the absorption wave bands of 0.4-0.8 micrometers by a treatment solution to obtain a visible light-near infrared quantum dot layer 6;
s6: spin-coating 40mg/ml ZnO solution on one side of the visible light-near infrared quantum dot layer 6 far away from the short wave infrared quantum dot layer 5 to form a film, wherein the spin-coating rotating speed is 2000 rpm, and heating and annealing the film for 10 minutes at 80 ℃ after spin-coating to obtain an electron transport layer 7;
s7: gold, silver, copper, titanium, ITO and FTO are processed in a mode of electron beam evaporation, magnetron sputtering or thermal evaporation coating to form a top electrode 8, and the top electrode 8 is arranged on one side of the electron transport layer 7, which is away from the visible light-near infrared quantum dot layer 6.
In this embodiment, the treatment solutions in S3, S4 and S5 are all ethanedithiol solutions.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (8)
1. A broad spectrum quantum dot photodetector, comprising: a substrate (1), a bottom electrode (2), a hole transport layer (3), a quantum dot layer, an electron transport layer (7) and a top electrode (8);
the bottom electrode (2) is arranged on one side of the substrate (1), the hole transmission layer (3) is arranged on one side of the bottom electrode (2) deviating from the substrate (1), the quantum dot layer is arranged on one side of the hole transmission layer (3) deviating from the bottom electrode (2), the electron transmission layer (7) is arranged on one side of the quantum dot layer deviating from the hole transmission layer (3), and the top electrode (8) is arranged on one side of the electron transmission layer (7) deviating from the quantum dot layer;
the quantum dot layer includes: the device comprises a medium wave infrared quantum dot layer (4), a short wave infrared quantum dot layer (5) and a visible light-near infrared quantum dot layer (6), wherein the absorption wave band of the medium wave infrared quantum dot layer (4) is 2.5-5 microns, the medium wave infrared quantum dot layer (4) is arranged on one side, deviating from a bottom electrode (2), of a hole transmission layer (3), the absorption wave band of the short wave infrared quantum dot layer (5) is 0.8-2.5 microns, the short wave infrared quantum dot layer (5) is arranged on one side, deviating from the hole transmission layer (3), of the medium wave infrared quantum dot layer (4), the absorption wave band of the visible light-near infrared quantum dot layer (6) is 0.4-0.8 microns, and the visible light-near infrared quantum dot layer (6) is arranged between the short wave infrared quantum dot layer (5) and an electron transmission layer (7).
2. The detector according to claim 1, characterized in that the medium wave infrared quantum dot layer (4) is an HgTe quantum dot layer;
the short wave infrared quantum dot layer (5) is an HgTe quantum dot layer;
the visible light-near infrared quantum dot layer (6) is a PbS quantum dot layer.
3. Detector according to claim 1 or 2, characterized in that the typical film thickness of the medium wave infrared quantum dot layer (4) is 300 nanometers;
the typical film thickness of the short wave infrared quantum dot layer (5) is 300 nanometers;
the typical film thickness of the visible light-near infrared quantum dot layer (6) is 300 nanometers.
4. The detector according to claim 1, characterized in that the preparation material of the substrate (1) is silicon wafer, sapphire or flexible resin;
the preparation material of the bottom electrode (2) is ITO or AZO;
the hole transport layer (3) is made of MoO 3 Or Pedot: pss;
the electron transport layer (7) is prepared from ZnO;
the preparation material of the top electrode (8) comprises metal and conductive oxide.
5. The detector of claim 4, wherein the metal is gold, silver, copper, or titanium;
the conductive oxide is ITO or FTO.
6. Detector according to claim 4, characterized in that the typical thickness of the bottom electrode (2) is 150-200 microns;
the hole transport layer (3) is made of MoO 3 Typical thickness is 10 nanometers, and the hole transport layer (3) is prepared from the following materials: typical thickness at Pss is 40 nm;
the electron transport layer (7) has a typical thickness of 40 nm;
the typical thickness of the top electrode (8) is 5-10 nanometers.
7. A method for producing a broad spectrum quantum dot photodetector, characterized in that the method is used for producing a detector according to any one of claims 1-6; the method comprises the following steps:
s1: providing a substrate (1), sputtering ITO or AZO onto the substrate (1) by a magnetron sputtering technology, and processing TO or AZO by a wet etching mode TO obtain a typical bottom electrode (2);
s2: moO is carried out 3 Or Pedot: deposition of PSs onto the bottom electrode (2) prepared in S1 forms MoO 3 Layer or Pedot: a Pss layer, namely a hole transport layer (3);
s3: depositing HgTe quantum dots with absorption wave bands of 2.5-5 microns on the hole transport layer (3) in a spin coating mode to form a quantum dot layer, and treating the HgTe quantum dot layer with absorption wave bands of 2.5-5 microns by a treatment solution to obtain a medium wave infrared quantum dot layer (4);
s4: depositing HgTe quantum dots with absorption wave bands of 0.8-2.5 micrometers on the medium-wave infrared quantum dot layer (4) in a spin coating mode to form a quantum dot layer, and treating the HgTe quantum dot layer with the absorption wave bands of 0.8-2.5 micrometers by a treatment solution to obtain a short-wave infrared quantum dot layer (5);
s5: depositing PbS quantum dots with absorption wave bands of 0.4-0.8 micrometers on the short-wave infrared quantum dot layer (5) in a spin coating mode to form a quantum dot layer, and treating the PbS quantum dot layer with the absorption wave bands of 0.4-0.8 micrometers by a treatment solution to obtain a visible light-near infrared quantum dot layer (6);
s6: spin-coating 40mg/ml ZnO solution on one side of a visible light-near infrared quantum dot layer (6) far away from a short wave infrared quantum dot layer (5) to form a film, wherein the spin-coating rotating speed is 2000 rpm, and heating and annealing the film for 10 minutes at 80 ℃ after spin-coating to obtain an electron transport layer (7);
s7: and processing gold, silver, copper, titanium, ITO and FTO by means of electron beam evaporation, magnetron sputtering or thermal evaporation coating to form a top electrode (8), and arranging the top electrode (8) on one side of the electron transmission layer (7) which is far away from the visible light-near infrared quantum dot layer (6).
8. The method of claim 7, wherein the treatment solutions in S3, S4 and S5 are all ethanedithiol solutions.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6239449B1 (en) * | 1998-05-05 | 2001-05-29 | National Research Council Of Canada | Quantum dot infrared photodetectors (QDIP) |
| CN111916513A (en) * | 2020-08-21 | 2020-11-10 | 合肥的卢深视科技有限公司 | Infrared detector, infrared imager and preparation method of infrared detector |
| US20220085225A1 (en) * | 2019-02-01 | 2022-03-17 | The University Of Chicago | Multi-band infrared imaging using stacked colloidal quantum-dot photodiodes |
| CN114220920A (en) * | 2021-12-09 | 2022-03-22 | 华中科技大学 | Quantum dot infrared detector and preparation method thereof |
| CN114464632A (en) * | 2022-02-10 | 2022-05-10 | 中国科学院半导体研究所 | Near-far infrared wide spectrum superlattice detector |
| CN114899328A (en) * | 2022-05-05 | 2022-08-12 | 华中科技大学 | Photoelectric detector and manufacturing method thereof |
| CN217214719U (en) * | 2021-11-19 | 2022-08-16 | 中芯热成科技(北京)有限责任公司 | Multiband super-pixel infrared focal plane detector |
| CN115287057A (en) * | 2022-08-02 | 2022-11-04 | 华中科技大学 | Preparation method of lead sulfide quantum dots, near-infrared solar cell and photoelectric detector |
| CN115692523A (en) * | 2022-10-25 | 2023-02-03 | 北京理工大学 | Dual-band quantum dot layer, device, preparation method and application thereof |
| CN115939237A (en) * | 2022-11-14 | 2023-04-07 | 北京理工大学 | Double-gradient-regulated quantum dot photovoltaic detector and preparation method thereof |
-
2023
- 2023-12-12 CN CN202311696515.5A patent/CN117393632B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6239449B1 (en) * | 1998-05-05 | 2001-05-29 | National Research Council Of Canada | Quantum dot infrared photodetectors (QDIP) |
| US20220085225A1 (en) * | 2019-02-01 | 2022-03-17 | The University Of Chicago | Multi-band infrared imaging using stacked colloidal quantum-dot photodiodes |
| CN111916513A (en) * | 2020-08-21 | 2020-11-10 | 合肥的卢深视科技有限公司 | Infrared detector, infrared imager and preparation method of infrared detector |
| CN217214719U (en) * | 2021-11-19 | 2022-08-16 | 中芯热成科技(北京)有限责任公司 | Multiband super-pixel infrared focal plane detector |
| CN114220920A (en) * | 2021-12-09 | 2022-03-22 | 华中科技大学 | Quantum dot infrared detector and preparation method thereof |
| CN114464632A (en) * | 2022-02-10 | 2022-05-10 | 中国科学院半导体研究所 | Near-far infrared wide spectrum superlattice detector |
| CN114899328A (en) * | 2022-05-05 | 2022-08-12 | 华中科技大学 | Photoelectric detector and manufacturing method thereof |
| CN115287057A (en) * | 2022-08-02 | 2022-11-04 | 华中科技大学 | Preparation method of lead sulfide quantum dots, near-infrared solar cell and photoelectric detector |
| CN115692523A (en) * | 2022-10-25 | 2023-02-03 | 北京理工大学 | Dual-band quantum dot layer, device, preparation method and application thereof |
| CN115939237A (en) * | 2022-11-14 | 2023-04-07 | 北京理工大学 | Double-gradient-regulated quantum dot photovoltaic detector and preparation method thereof |
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