CN114457421A - Device for increasing feeding amount for monocrystalline silicon production and using method thereof - Google Patents
Device for increasing feeding amount for monocrystalline silicon production and using method thereof Download PDFInfo
- Publication number
- CN114457421A CN114457421A CN202111574989.3A CN202111574989A CN114457421A CN 114457421 A CN114457421 A CN 114457421A CN 202111574989 A CN202111574989 A CN 202111574989A CN 114457421 A CN114457421 A CN 114457421A
- Authority
- CN
- China
- Prior art keywords
- crucible
- assembly
- support ring
- subassembly
- connecting clamping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000000463 material Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 7
- 238000009434 installation Methods 0.000 claims description 2
- 239000010453 quartz Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000005265 energy consumption Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a device for increasing the batch charging amount for monocrystalline silicon production and a using method thereof, and relates to the technical field of monocrystalline silicon manufacturing. The crucible pulling device comprises a crucible binding assembly, a crucible pulling assembly and a quartz crucible, wherein the crucible binding assembly is arranged above the crucible pulling assembly and comprises a crucible binding main body, a crucible bottom and first connecting clamping strips, the bottom end of the inner side of the crucible binding main body is fixedly provided with the crucible bottom, the middle part of the crucible bottom is provided with a connecting hole, the cross section of the crucible bottom is in a concave arc shape, and the bottom end of the crucible bottom is fixedly provided with a plurality of groups of first connecting clamping strips. According to the crucible pulling assembly, the heightening support ring with the corresponding specification can be selected according to the crucible body with different specifications through the structural design, the heightening support ring and the crucible body are installed, the overall height of the device can be increased, the feeding amount of the device is increased, the cost is lower, the influence on a thermal field is small, the restriction on growth parameters is small, the crucible pulling assembly can be conveniently taken down from the crucible pulling assembly, and the overall quick disassembly and assembly of the crucible pulling assembly can be conveniently realized.
Description
Technical Field
The invention belongs to the technical field of monocrystalline silicon manufacturing, and particularly relates to a device for increasing the batch size for monocrystalline silicon production and a using method thereof.
Background
Monocrystalline silicon is mainly used for photovoltaic power generation and is a clean energy source which is generally recognized and vigorously developed all over the world at present, but the requirements of monocrystalline silicon manufacturing process conditions are harsh, energy consumption is high, cost is high, and the vigorous popularization of photovoltaic power generation is hindered to a certain extent, so that the problems of meeting the growth conditions of monocrystalline silicon and reducing energy consumption and production cost are urgently needed to be solved at present, but the existing method for increasing the feeding amount of monocrystalline silicon is to manufacture a crucible with larger capacity, the cost is high, the influence on a thermal field is large, and the restriction on growth parameters is large.
Disclosure of Invention
The invention aims to provide a device for increasing the feeding amount for monocrystalline silicon production and a using method thereof, which are used for solving the existing problems: the existing method for increasing the feeding amount of monocrystalline silicon is to manufacture a crucible with larger capacity, has higher cost, has larger influence on a thermal field and is greatly restricted by growth parameters.
In order to solve the technical problems, the invention is realized by the following technical scheme: the utility model provides a monocrystalline silicon production is with device that increases batch size, includes that crucible is bound subassembly, crucible and drags subassembly and quartz crucible, crucible is bound the unit mount and is dragging the top of subassembly in the crucible, crucible is bound the subassembly including crucible and is bound the main part, the top of crucible is bound the main part and is equipped with and increases the support ring, quartz crucible is located the inside that crucible was bound the subassembly.
Further, crucible nation subassembly is still including at the bottom of the crucible and first connection card strip, at the bottom of the inboard bottom mounting of crucible nation main part has at the bottom of the crucible, the connecting hole has been seted up at the middle part at the bottom of the crucible, just the cross sectional shape at the bottom of the crucible is recessed arc, the bottom mounting at the bottom of the crucible has the first connection card strip of a plurality of groups.
Further, the crucible dragging assembly comprises a crucible dragging plate, a connecting base and second connecting clamping strips, the connecting base is fixed at the middle of the top end of the crucible dragging plate, the cross section of the upper surface of the connecting base is in the shape of a concave arc, and a plurality of groups of second connecting clamping strips are further fixed on the upper surface of the crucible dragging plate.
Further, the inboard of heightening the support ring bottom is provided with the recess, the top of crucible bang main part is fixed with annular lug, heighten the support ring and the cooperation installation of crucible bang main part through recess and annular lug.
Furthermore, the crucible joint assembly, the crucible pulling assembly and the heightened support ring are all made of C-C materials.
The use method of the device for increasing the feeding amount for the production of the monocrystalline silicon is used for the device for increasing the feeding amount for the production of the monocrystalline silicon and comprises the following steps;
s1: the crucible puller assembly is arranged in a single crystal furnace;
s2: selecting a crucible port assembly with a proper specification according to the requirement;
s3: placing the crucible port assembly into a single crystal furnace, and staggering a first connecting clamping strip on the crucible port assembly and a second connecting clamping strip on the crucible port assembly;
s4: rotating the crucible port assembly clockwise, and clamping the first connecting clamping strip and the second connecting clamping strip to complete the connection of the crucible port assembly and the crucible port assembly;
s5: selecting a heightened support ring with a specification corresponding to the crucible pot component;
s6: the part of the heightened support ring with the clamping groove faces downwards and is buckled on the crucible body, and the heightened support ring and the crucible body are installed together. The invention has the following beneficial effects:
1. according to the crucible pot body, through the structural design, the heightened support rings with corresponding specifications can be selected according to the crucible pot bodies with different specifications, the heightened support rings and the crucible pot bodies are installed, the overall height of the device can be increased, the feeding amount of the device is increased, the cost is lower, the influence on a thermal field is small, and the restriction on growth parameters is small.
2. According to the invention, through the structural design, the crucible port assembly can be conveniently and integrally taken down from the crucible dragging assembly, and the crucible port assembly can be conveniently and rapidly assembled and disassembled integrally.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is an exploded view of the present invention;
FIG. 3 is a cross-sectional view of the present invention;
FIG. 4 is a schematic structural view of the pot puller assembly of the present invention;
FIG. 5 is a bottom view of the crucible port assembly of the present invention.
In the drawings, the components represented by the respective reference numerals are listed below:
1. a crucible port assembly; 2. a crucible puller assembly; 3. heightening the support ring; 4. a quartz crucible; 5. a crucible body; 6. a crucible bottom; 7. a first connecting clip strip; 8. a crucible carriage; 9. connecting a base; 10. and a second connecting clamping strip.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
referring to fig. 1-5, the invention relates to a device for increasing the batch size for monocrystalline silicon production, which comprises a crucible port assembly 1, a crucible port assembly 2 and a quartz crucible 4, wherein the crucible port assembly 1 is arranged above the crucible port assembly 2;
specifically, the crucible end assembly 1 comprises a crucible end main body 5, a crucible bottom 6 and a first connecting clamping strip 7, wherein the crucible bottom 6 is fixed at the bottom end of the inner side of the crucible end main body 5, a connecting hole is formed in the middle of the crucible bottom 6, the cross section of the crucible bottom 6 is in a concave arc shape, a plurality of groups of first connecting clamping strips 7 are fixed at the bottom end of the crucible bottom 6, the first connecting clamping strips 7 are in a bent L shape, and the shorter ends of the first connecting clamping strips 7 are fixed with the bottom end of the crucible bottom 6;
further, the crucible dragging component 2 comprises a crucible carriage 8, a connecting base 9 and a second connecting clamping strip 10, the connecting base 9 is fixed at the middle of the top end of the crucible carriage 8, the cross sectional shape of the upper surface of the connecting base 9 is a concave arc, a plurality of groups of second connecting clamping strips 10 are further fixed on the upper surface of the crucible carriage 8, the second connecting clamping strips 10 are in a bent L shape, the shorter end of each second connecting clamping strip 10 is fixed with the upper surface of the crucible carriage 8, when the crucible bonding component 1 and the crucible dragging component 2 are installed, the positions of the first connecting clamping strips 7 and the second connecting clamping strips 10 are staggered and rotate clockwise, the first connecting clamping strips 7 and the second connecting clamping strips 10 can be clamped together, and then the crucible bonding component 1 and the crucible dragging component 2 can be installed together, the whole crucible bonding component 1 can be conveniently replaced, the use is more convenient, and the crucible bonding component 1 and the crucible dragging component 2 are installed together, the connecting base 9 is inserted into the connecting hole in the middle of the crucible bottom 6, and the connecting hole is filled, so that heat can be better transferred;
further, the top of crucible nation main part 5 is equipped with increases support ring 3, crucible nation subassembly 1, the crucible drags subassembly 2 and increases support ring 3 and all adopts the C-C material to make, adopt C-C material preparation crucible nation subassembly 1, the crucible drags subassembly 2 and increases support ring 3, can guarantee the life of device, it is longer to make device life cycle, the effect is better, the inboard of increasing support ring 3 bottom is provided with the recess, crucible nation main part 5's top is fixed with annular lug, it installs through recess and annular lug cooperation with crucible nation main part 5 to increase support ring 3, can increase the holistic height of device, can increase the holistic throw material volume of device, and then can increase monocrystalline silicon's production speed, the cost is lower, and little to the thermal field influence, quartz crucible 4 is located crucible nation subassembly 1's inside.
Example two:
on the basis of the first embodiment, the use method of the device for increasing the material feeding amount for producing the monocrystalline silicon is disclosed, and the method comprises the following steps:
s1: opening the single crystal furnace, and installing the bottom end of the crucible pulling assembly 2 into the bottom of the single crystal furnace;
s2: selecting a crucible port assembly 1 with a proper specification according to the specification of monocrystalline silicon to be processed;
s3: the crucible side assembly 1 is placed into a single crystal furnace, a connecting hole in the middle of the crucible bottom 6 is aligned with a connecting base 9, and a first connecting clamping strip 7 on the crucible side assembly 1 and a second connecting clamping strip 10 on the crucible puller assembly 2 are staggered;
s4: after the crucible port component 1 is put down, the bottom end of the crucible port main body 5 is attached to the upper surface of the crucible carriage 8, the crucible port component 1 is rotated clockwise, the first connecting clamping strip 7 rotates clockwise, the first connecting clamping strip 7 is inserted into the second connecting clamping strip 10, the first connecting clamping strip 7 is clamped with the second connecting clamping strip 10, the connection between the crucible port component 1 and the crucible port component 2 is completed, and the crucible port component 1 can be conveniently disassembled;
s5: selecting a heightened support ring 3 with the specification corresponding to the crucible joint component 1;
s6: the position that will increase support ring 3 and have the draw-in groove is down, detains in the annular convex block on crucible bang main part 5, will increase support ring 3 and crucible bang main part 5 installs together, and then increases the holistic height of device, and then increases the throw material volume of device, and the cost is lower.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (6)
1. The utility model provides a monocrystalline silicon production is with device that increases input which characterized in that: including crucible boner subassembly (1), crucible tow subassembly (2) and quartzy crucible (4), crucible boner subassembly (1) is installed in the crucible and is dragged the top of subassembly (2), crucible boner subassembly (1) is including crucible boner main part (5), the top of crucible boner main part (5) is equipped with and increases support ring (3), quartzy crucible (4) are located the inside of crucible boner subassembly (1).
2. The apparatus of claim 1, wherein the apparatus comprises: crucible is bound subassembly (1) and still including at the bottom of the crucible (6) and first connection card strip (7), crucible is bound at the bottom of main part (5) inboard bottom mounting has at the bottom of the crucible (6), the connecting hole has been seted up at the middle part of the crucible at the bottom of (6), just the cross section shape at the bottom of the crucible (6) is recessed arc, the bottom mounting at the bottom of the crucible (6) has first connection card strip (7) of a plurality of groups.
3. The apparatus of claim 2, wherein the apparatus comprises: crucible tow subassembly (2) is including crucible planker (8), connection base (9) and second connection card strip (10), the middle part on crucible planker (8) top is fixed with connection base (9), the cross sectional shape of the upper surface of connecting base (9) is recessed arc, the upper surface of crucible planker (8) still is fixed with a plurality of groups second connection card strip (10).
4. The apparatus of claim 1, wherein the apparatus comprises: increase the inboard of support ring (3) bottom and be provided with the recess, the top of crucible nation main part (5) is fixed with annular convex block, increase support ring (3) and crucible nation main part (5) and pass through recess and annular convex block cooperation installation.
5. The apparatus of claim 1, wherein the apparatus comprises: the crucible joint component (1), the crucible dragging component (2) and the heightened support ring (3) are all made of C-C materials.
6. A method for using a charge quantity increasing device for single crystal silicon production, which is used for the charge quantity increasing device for single crystal silicon production as claimed in any one of claims 1 to 5, and is characterized in that: the method comprises the following steps of;
s1: the crucible puller assembly (2) is arranged in a single crystal furnace;
s2: selecting a crucible port assembly (1) with a proper specification according to the requirement;
s3: the crucible side assembly (1) is placed into a single crystal furnace, and a first connecting clamping strip (7) on the crucible side assembly (1) and a second connecting clamping strip (10) on the crucible pulling assembly (2) are staggered;
s4: the crucible port assembly (1) is rotated clockwise, the first connecting clamping strip (7) and the second connecting clamping strip (10) are clamped, and the connection of the crucible port assembly (1) and the crucible port assembly (2) is completed;
s5: selecting a heightened support ring (3) with a specification corresponding to that of the crucible joint component (1);
s6: the part of the heightening support ring (3) with the clamping groove faces downwards and is buckled on the crucible body (5), and the heightening support ring (3) and the crucible body (5) are installed together.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111574989.3A CN114457421A (en) | 2021-12-21 | 2021-12-21 | Device for increasing feeding amount for monocrystalline silicon production and using method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111574989.3A CN114457421A (en) | 2021-12-21 | 2021-12-21 | Device for increasing feeding amount for monocrystalline silicon production and using method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114457421A true CN114457421A (en) | 2022-05-10 |
Family
ID=81405211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111574989.3A Pending CN114457421A (en) | 2021-12-21 | 2021-12-21 | Device for increasing feeding amount for monocrystalline silicon production and using method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114457421A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090165701A1 (en) * | 2007-12-28 | 2009-07-02 | Japan Super Quartz Corporation | Vitreous silica crucible for pulling single-crystal silicon |
| CN202072797U (en) * | 2011-03-17 | 2011-12-14 | 常熟华融太阳能新型材料有限公司 | Quartz crucible heightening device for polycrystalline silicon ingot casting |
| CN104894638A (en) * | 2015-06-30 | 2015-09-09 | 湖南南方搏云新材料有限责任公司 | Carbon-material combined crucible for single-crystal furnace |
| CN105526799A (en) * | 2014-10-21 | 2016-04-27 | 镇江大成新能源有限公司 | Novel split carbon-carbon crucible |
| CN207760444U (en) * | 2017-11-02 | 2018-08-24 | 青海日晶光电有限公司 | A kind of single-crystal furnace guide shell |
-
2021
- 2021-12-21 CN CN202111574989.3A patent/CN114457421A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090165701A1 (en) * | 2007-12-28 | 2009-07-02 | Japan Super Quartz Corporation | Vitreous silica crucible for pulling single-crystal silicon |
| CN202072797U (en) * | 2011-03-17 | 2011-12-14 | 常熟华融太阳能新型材料有限公司 | Quartz crucible heightening device for polycrystalline silicon ingot casting |
| CN105526799A (en) * | 2014-10-21 | 2016-04-27 | 镇江大成新能源有限公司 | Novel split carbon-carbon crucible |
| CN104894638A (en) * | 2015-06-30 | 2015-09-09 | 湖南南方搏云新材料有限责任公司 | Carbon-material combined crucible for single-crystal furnace |
| CN207760444U (en) * | 2017-11-02 | 2018-08-24 | 青海日晶光电有限公司 | A kind of single-crystal furnace guide shell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN206157273U (en) | Novel single crystal growing furnace | |
| CN202945364U (en) | Crucible shaft and crucible combination body comprising same | |
| CN206188922U (en) | Heater for pulling of crystals | |
| CN114457421A (en) | Device for increasing feeding amount for monocrystalline silicon production and using method thereof | |
| CN201560248U (en) | Graphite crucible for single crystal furnace | |
| CN208901905U (en) | A kind of novel long-life furnace lid | |
| CN201933196U (en) | Graphite crucible for single crystal furnace | |
| CN203923446U (en) | Heat shield for single crystal furnace | |
| CN201250298Y (en) | Split-type quartz boat structure | |
| CN2708213Y (en) | Polysilicon hydrogen reducing furnace | |
| CN202246990U (en) | Guide cylinder and seeding device for suspending and producing monocrystalline silicon rod | |
| CN202945365U (en) | Graphite electrode used for heater of direct-pull single crystal furnace | |
| CN208067113U (en) | A kind of shaping mould for manufacturing charging interface in MIM techniques | |
| CN202359226U (en) | Feeding device for single crystal furnaces | |
| CN106245117B (en) | Monoblock type carbon carbon crucible and its manufacturing method | |
| CN206849929U (en) | A kind of new collector plate of lithium battery | |
| CN205439551U (en) | Solar cell is with printing half tone | |
| CN202482483U (en) | Heat shield suspension mechanism for single crystal furnaces | |
| CN208920863U (en) | A kind of solar battery sheet sintering furnace | |
| CN204310822U (en) | For feeding structure and the vertical graphite stove of vertical graphite stove | |
| CN209623364U (en) | A kind of high temperature kiln multiple-grooved modular tile | |
| CN212274617U (en) | Heat preservation quilt for lead pan of storage battery | |
| CN202661504U (en) | Transparent cover plate for mounting upper nameplate of electric energy meter | |
| CN220672633U (en) | Hot-pressing movable plate assembly | |
| CN217849302U (en) | High-efficient polycrystalline black silicon solar cell installing support with stable base |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20220510 |
|
| RJ01 | Rejection of invention patent application after publication |