CN114448371A - Bulk acoustic wave resonator assembly, filter, electronic device, and method of manufacturing bulk acoustic wave resonator assembly - Google Patents
Bulk acoustic wave resonator assembly, filter, electronic device, and method of manufacturing bulk acoustic wave resonator assembly Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present invention relates to a bulk acoustic wave resonator assembly and a method of manufacturing the same, the assembly comprising: first syntonizer and second syntonizer, first syntonizer and second syntonizer are the bulk acoustic wave syntonizer, and have a plurality of retes respectively, a plurality of retes are including setting up the top rete at the syntonizer top that corresponds, wherein: only one of the first resonator and the second resonator is provided with a temperature compensation layer; and the thickness of the top film layer of the first resonator is different from the thickness of the top film layer of the second resonator. The invention also relates to a filter and an electronic device.
Description
Technical Field
Embodiments of the present invention relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator assembly, a method of manufacturing the same, a filter, and an electronic device.
Background
With the increasing development of 5G communication technology, the requirement on the data transmission rate is higher and higher. Corresponding to the data transmission rate is a high utilization of spectrum resources and spectrum complications. The complexity of the communication protocol imposes stringent requirements on the various performances of the rf system, and the rf filter plays a crucial role in the rf front-end module, which can filter out-of-band interference and noise to meet the signal-to-noise ratio requirements of the rf system and the communication protocol.
The traditional radio frequency filter is limited by structure and performance and cannot meet the requirement of high-frequency communication. As a novel MEMS device, a Film Bulk Acoustic Resonator (FBAR) has the advantages of small volume, light weight, low insertion loss, wide frequency band, high quality factor and the like, and is well adapted to the update of a wireless communication system, so that the FBAR technology becomes one of the research hotspots in the communication field.
The structural main body of the film bulk acoustic resonator is a sandwich structure consisting of an electrode, a piezoelectric film and an electrode, namely a layer of piezoelectric material is sandwiched between two metal electrode layers. By inputting a sinusoidal signal between the two electrodes, the FBAR converts the input electrical signal into mechanical resonance using the inverse piezoelectric effect, and converts the mechanical resonance into an electrical signal for output using the piezoelectric effect.
The external environment and the heat generated during the operation of the bulk wave resonator can cause the temperature change of the resonator, and the change can cause the resonance frequency of the resonator to shift, which can cause adverse effect on the performance of the resonator or various electronic devices composed of the resonator.
This is usually done by incorporating one or more temperature compensation layers of a material of opposite sign to the temperature coefficient of frequency of the piezoelectric layer itself (e.g. aluminum nitride has a negative temperature coefficient of frequency and silicon dioxide has a positive temperature coefficient of frequency) in the sandwich structure to counteract or partially counteract the frequency drift of the resonator due to temperature variations.
The bulk acoustic wave resonator generally has a negative frequency temperature drift coefficient, which is about-30 PPM/K, because the piezoelectric material and the electrode material of the bulk acoustic wave resonator have the negative frequency temperature drift coefficient, which means that the rigidity of the materials can be reduced along with the increase of the temperature, and the sound velocity can be reduced along with the reduction of the rigidity. In combination with V ═ F × λ ═ F × 2d (where V is the speed of sound, F is the frequency, λ is the wavelength, and d is the thickness of the piezoelectric layer), the frequency will decrease; but when the temperature is increased, SiO2And the stiffness of the positive frequency temperature drift coefficient material will increase. So that it is possible to increase SiO2And positive frequency temperature driftA layer of coefficient material (i.e., temperature compensation layer) to prevent the decrease in resonator stiffness leading to a decrease in acoustic velocity and thus prevent frequency drift.
However, after the bulk acoustic wave resonator with the temperature compensation layer and the ordinary bulk acoustic wave resonator without the temperature compensation layer are integrated together, the frequency difference is not fixed or the two resonators cannot reach the target frequency at the same time, and the main reason is that the resonator with the temperature compensation layer has more film layers than the ordinary resonator, such as a first seed layer 80, a temperature compensation layer 81 and a second seed layer 82 of the temperature compensation layer in fig. 1, and the film layers have a certain error with a preset value during deposition, and the error is naturally occurring and unavoidable, and the error causes a fluctuation in the frequency difference between the frequency of the resonator with the temperature compensation layer and the frequency of the resonator without the temperature compensation layer.
In reality there is a need to bring both resonators with temperature compensation and ordinary resonators without temperature compensation to the target frequency simultaneously.
Disclosure of Invention
The present invention has been made to mitigate or solve at least one of the above-mentioned problems in the prior art.
According to an aspect of the embodiments of the present invention, it is proposed
A bulk acoustic wave resonator assembly comprising:
a first resonator and a second resonator, both being bulk acoustic wave resonators and each having a plurality of film layers including a top film layer disposed on top of the corresponding resonator,
wherein:
only one of the first resonator and the second resonator is provided with a temperature compensation layer; and is
The thickness of the top film layer of the first resonator is different from the thickness of the top film layer of the second resonator.
Embodiments of the present invention also relate to a method of manufacturing a bulk acoustic wave resonator assembly, the assembly including a first resonator and a second resonator, both of which are bulk acoustic wave resonators and each of which has a plurality of film layers including a top film layer disposed on top of the corresponding resonator, only one of the first resonator and the second resonator being provided with a temperature compensation layer, the method including:
thickness reduction: reducing the thickness of the top film layer of the first resonator and/or the second resonator
Embodiments of the present invention also relate to a filter comprising a bulk acoustic wave resonator assembly as described above.
Embodiments of the invention also relate to an electronic device comprising a filter as described above or a bulk acoustic wave resonator assembly as described above.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout, and in which:
FIG. 1 is a schematic cross-sectional view of a prior art bulk acoustic wave resonator assembly;
2-4 illustrate schematic cross-sectional views of a method of fabricating a bulk acoustic wave resonator assembly according to an exemplary embodiment of the present invention;
5-10 illustrate schematic cross-sectional views of a method of fabricating a bulk acoustic wave resonator assembly according to another exemplary embodiment of the present invention;
11-16 illustrate schematic cross-sectional views of a method of fabricating a bulk acoustic wave resonator assembly according to yet another exemplary embodiment of the present invention;
FIGS. 17-20 show schematic cross-sectional views of a method of fabricating a bulk acoustic wave resonator assembly according to yet another exemplary embodiment of the present invention;
figure 21 is a schematic cross-sectional view of a bulk acoustic wave resonator assembly according to an exemplary embodiment of the present invention showing the etch depth of the piezoelectric layer of both resonators.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention. Some, but not all embodiments of the invention are described. All other embodiments that can be derived by one of ordinary skill in the art from the embodiments given herein are intended to be within the scope of the present invention.
In the invention, thinning can be performed on the bulk acoustic wave resonator provided with the temperature compensation layer and the bulk acoustic wave resonator not provided with the temperature compensation layer by adopting a trim process (particle beam bombardment process) after the barrier layer is arranged, so that the two resonators can simultaneously reach a target frequency or have a preset frequency difference.
In the present invention, reference numerals in the drawings are described as follows:
10: the substrate can be selected from monocrystalline silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, diamond and the like.
20: the acoustic mirror can be a cavity, and a Bragg reflection layer and other equivalent forms can also be adopted. The embodiment of the present invention takes the form of a cavity.
21: the sacrificial layer can be made of silicon dioxide, doped silicon dioxide, polysilicon, amorphous silicon and the like.
30: the bottom electrode (including the bottom electrode pin) can be made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the metals or an alloy thereof.
40: the sandwich electrode or intermediate electrode is made of Mo, Ru, Au, Al, Mg, W, Cu, Ti, Ir, Os, Cr, their composition or their alloy, etc.
50: the piezoelectric layer can be a single crystal piezoelectric material, and can be selected from the following: the material may be polycrystalline piezoelectric material (corresponding to single crystal, non-single crystal material), optionally, polycrystalline aluminum nitride, zinc oxide, PZT, or a rare earth element doped material containing at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), erbium (Ho), erbium (holmium), thulium (Tm), ytterbium (Yb), lutetium (Lu), or the like.
60: the top electrode (including the top electrode pin) can be made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the metals or an alloy thereof.
70: a passivation layer or process layer or dielectric layer, which may be aluminum nitride, silicon dioxide, or the like, is located over the top electrode.
80: the first seed layer can be selected from materials such as aluminum nitride, zinc oxide, PZT and the like and contains rare earth element doping materials with certain atomic ratio of the materials.
81: a temperature compensation layer which may be SiO2And a positive frequency temperature drift coefficient material layer.
82: the second seed layer can be selected from materials such as aluminum nitride, zinc oxide, PZT and the like and contains rare earth element doping materials with certain atomic ratios of the materials.
90: the first trim barrier layer may be any material that can provide a barrier to trim particle beams, and in an exemplary embodiment of the invention is SiO2。
100: the second trim barrier layer may be any material that can provide a barrier to trim particle beams, and in an exemplary embodiment of the invention is SiO2。
Fig. 1 is a schematic cross-sectional view of a prior art bulk acoustic wave resonator assembly, as shown in fig. 1, in which a resonator with a temperature compensation layer and a normal resonator without a temperature compensation layer have been integrated (bulk acoustic wave resonator assembly), but the two resonators do not reach a desired frequency, and both resonators are generally smaller than a target frequency.
A manufacturing method for making the above-described two resonators reach a predetermined frequency is exemplified below.
Figures 2-4 show schematic cross-sectional views of a method of fabricating a bulk acoustic wave resonator assembly according to an exemplary embodiment of the present invention.
First, the top film layers of the first resonator and the second resonator are simultaneously thinned by utilizing a trim process until one of the first resonator and the second resonator reaches a target frequency.
Second, a barrier layer is deposited and the side that does not reach the target frequency is etched away to form the structure shown in fig. 2, assuming that the normal resonator reaches the target frequency first, the resonator with the temperature compensation layer has not reached the target frequency. At this point a first trim barrier 90 is deposited, after which the portion of the resonator side with the temperature compensated layer is etched away. As will be appreciated by those skilled in the art, in one embodiment of the invention the etch selectivity of the first trim barrier layer 90 to the dielectric layer 70 over the top electrode of the temperature compensated resonator is as great as possible so that the dielectric layer 70 over the top electrode is not damaged when the first trim barrier layer 90 is etched away. The deposition thickness of the first trim barrier layer 90 is selected to be appropriate in accordance with the trim rate of the first trim barrier layer 90 and the dielectric layer 70 over the top electrode so that the first trim barrier layer 90 remains at the completion of the trim process, as shown later in figure 3.
Thirdly, performing the trim process, wherein the ordinary resonator part has the first trim barrier layer 90, so that only the barrier layer is consumed and the dielectric layer 70 above the top electrode is not consumed, and the dielectric layer 70 above the top electrode is consumed on the other side, so that the resonator with the temperature compensation layer slowly approaches the target frequency until the trim process is finished after the target frequency is reached, and obtaining the structure shown in fig. 3.
Fourth, the remaining first trim barrier 90 is removed, when both resonators reach the desired target frequency simultaneously, as in the structure of FIG. 4.
In the embodiments shown in fig. 2 to 4, it is assumed that the ordinary resonator without the temperature compensation layer reaches the target frequency first, but it is also possible that the resonator with the temperature compensation layer reaches the target frequency first.
In the steps shown in fig. 2 to 4, in the case where the target frequencies of the resonator with the temperature compensation layer and the normal resonator without the temperature compensation layer are not different from each other, it is sometimes difficult to determine which resonator reaches the predetermined frequency first.
Figures 5-10 show schematic cross-sectional views of a method of manufacturing a bulk acoustic wave resonator assembly according to another exemplary embodiment of the present invention.
As in fig. 1, after the two resonators are integrated, only the frequency is to be corrected, and the operation steps are explained as follows with reference to fig. 5 to 10:
first, a first trim barrier 90 is deposited, after which the first trim barrier 90 on the resonator side with the temperature compensation layer is removed by etching, as shown in fig. 5. I.e. a first trim barrier 90 is provided on one side of the ordinary resonator.
Second, the trim process is performed so that the resonator with the temperature compensation layer reaches the target frequency while the first trim barrier 90 remains, as shown in FIG. 6.
Third, the remaining first trim barrier 90 is removed as shown in FIG. 7.
Fourth, a second trim barrier 100 is deposited, the second trim barrier 100 may be similar to the first trim barrier 90, and the etch selectivity of the second trim barrier 100 to the dielectric layer 70 over the top electrode is selected to be as great as possible so that the dielectric layer 70 over the top electrode is not damaged when the second trim barrier 100 is etched away. The deposition thickness of the first trim barrier layer 100 is chosen to be of an appropriate thickness according to the trim rate of the second trim barrier layer 100 and the dielectric layer 70 over the top electrode so that the second trim barrier layer 100 remains at the completion of the trim process. After deposition of the second trim barrier 100 on the side of the ordinary resonator is removed by etching, as shown in fig. 8, i.e. the second trim barrier 100 is provided only on the side of the resonator where the temperature compensated layer is provided.
Fifth, the trim process is performed so that the normal resonator reaches the target frequency while the second trim barrier 100 remains, as shown in fig. 9.
Sixth, the remaining second trim barrier layer 100 is removed, as shown in FIG. 10.
In the example shown in fig. 5-10, the top film layer of a temperature compensated resonator is first trim thinned to achieve a predetermined frequency, and then trim thinned to achieve the predetermined frequency for the top film layer of a normal resonator without temperature compensation. However, in a different embodiment, it is also possible to trim-thin the top film layer of the resonator without temperature compensation layer to reach the predetermined frequency and then trim-thin the top film layer of the resonator with temperature compensation layer to reach the predetermined frequency, and fig. 11 to 16 show schematic cross-sectional views of a method of manufacturing a bulk acoustic wave resonator assembly according to yet another exemplary embodiment of the present invention.
As in fig. 1, after the two resonators are integrated, only the frequency is to be corrected, and the operation steps are explained below with reference to fig. 11 to 16:
first, a first trim barrier 90 is deposited, after which the first trim barrier 90 on the resonator side without the temperature compensation layer is removed by etching, as shown in fig. 11. That is, a first trim barrier 90 is provided on one side of the temperature compensation layer.
Second, the trim process is performed so that the resonator without the temperature compensation layer reaches the target frequency while the first trim barrier 90 remains, as shown in FIG. 12.
Third, the remaining first trim barrier 90 is removed as shown in FIG. 13.
Fourth, a second trim barrier 100 is deposited, the second trim barrier 100 may be similar to the first trim barrier 90, and the etch selectivity of the second trim barrier 100 to the dielectric layer 70 over the top electrode is selected to be as great as possible so that the dielectric layer 70 over the top electrode is not damaged when the second trim barrier 100 is etched away. The deposition thickness of the first trim barrier layer 100 is chosen to be of an appropriate thickness according to the trim rate of the second trim barrier layer 100 and the dielectric layer 70 over the top electrode so that the second trim barrier layer 100 remains at the completion of the trim process. After deposition of the second trim barrier 100 on the resonator side with the temperature compensation layer is removed by etching, as shown in fig. 14, i.e. the second trim barrier 100 is provided only on the side where the resonator without the temperature compensation layer is provided.
Fifth, the trim process is performed so that the resonator with the temperature compensated layer reaches the target frequency while the second trim barrier layer 100 remains, as shown in fig. 15.
Sixth, the remaining second trim barrier layer 100 is removed, as shown in FIG. 16.
After the resonators are integrated, only the frequency is to be corrected, in this case, one of the resonators may be trim first to obtain the fixed frequency difference between the two resonators, and then trim is performed on the two resonators simultaneously to finally make the two resonators reach the target frequency simultaneously. A method of manufacturing a bulk acoustic wave resonator assembly is illustrated with reference to fig. 17-20 (assuming that a trim process is first performed on a normal resonator without a temperature compensation layer on an as-needed basis).
First, a first trim barrier 90 is deposited, followed by etching to remove the first trim barrier 90 on one side of the normal resonator, as shown in FIG. 17.
Second, trim is performed so that the frequency difference between the normal resonator and the warm-patch resonator coincides with the target value, while the first trim barrier 90 remains, as shown in fig. 18.
Third, the remaining first trim barrier 90 is removed as shown in FIG. 19.
Fourth, trim is performed on both resonators simultaneously so that both resonators reach the target frequency simultaneously, as shown in fig. 20.
In the present invention, a trim process is used as a process for reducing the thickness of the top film layer of the resonator, but the present invention is not limited to this process, and any process that can reduce the thickness of the top film layer may be adopted, and is within the scope of the present invention.
In actual production, the dielectric layer 70 above the top electrode may have a small reduction in thickness (different manufacturing processes may differ) when removing the trim barrier 90 or 100, and to solve this problem, the margin may be set aside. For example, when removing the first trim barrier 90, the thickness of the dielectric layer 70 above the top electrode of the resonator with the barrier may be reduced by 1nm and the thickness of the dielectric layer 70 above the top electrode of the resonator without the barrier may be reduced by 3nm, which helps to obtain a more accurate resonator frequency. It should be noted, however, that even if no margin is left, both resonators can be made to substantially reach the target frequency in view of the small amount of reduction in the film thickness of the dielectric layer 70 resulting from removing the barrier layer, which is within the scope of the present invention.
Figure 21 is a schematic cross-sectional view of a bulk acoustic wave resonator assembly according to an exemplary embodiment of the present invention showing the etch depth of the piezoelectric layer of both resonators.
As can be seen from fig. 21, the etch depth T1 of the piezoelectric layer of the resonator with the temperature compensation layer is different from the etch depth T2 of the piezoelectric layer of the resonator without the temperature compensation layer. As shown in fig. 21, the etching depth is a difference in height in the thickness direction of the resonator between the surface of the piezoelectric layer outside the non-electrode connecting end of the top electrode of the resonator and the surface of the piezoelectric layer inside the non-electrode connecting end of the top electrode of the resonator.
In the present invention, the dielectric layer 70 is disposed above the top electrode of the resonator as the top film layer of the resonator, but the present invention is not limited thereto, and the top film layer of the resonator may be the top electrode.
In the present invention, the upper and lower are with respect to the bottom surface of the substrate, and for a component, the side thereof close to the bottom surface is the lower side, and the side thereof far from the bottom surface is the upper side.
In the present invention, the inner and outer are in the lateral direction or the radial direction with respect to the center of the effective area of the resonator (the overlapping area of the piezoelectric layer, the top electrode, the bottom electrode, and the acoustic mirror in the thickness direction of the resonator constitutes the effective area), the side or end of a component close to the center of the effective area is the inner side or the inner end, and the side or end of the component away from the center of the effective area is the outer side or the outer end. For a reference position, being inside of the position means being between the position and the center of the effective area in the lateral or radial direction, and being outside of the position means being further away from the center of the effective area than the position in the lateral or radial direction.
As can be appreciated by those skilled in the art, the bulk acoustic wave resonator assembly may be used to form a filter or other semiconductor device.
Based on the above, the invention provides the following technical scheme:
1. a bulk acoustic wave resonator assembly comprising:
a first resonator and a second resonator, both being bulk acoustic wave resonators and each having a plurality of film layers including a top film layer disposed on top of the corresponding resonator,
wherein:
only one of the first resonator and the second resonator is provided with a temperature compensation layer; and is
The thickness of the top film layer of the first resonator is different from the thickness of the top film layer of the second resonator.
2. The assembly of claim 1, wherein:
the first resonator has the same frequency as the second resonator.
3. The assembly of claim 1, wherein:
the frequencies of the first resonator and the second resonator have a predetermined difference.
4. The assembly of claim 1, wherein:
the etching depth of the piezoelectric layer of the first resonator is different from the etching depth of the piezoelectric layer of the second resonator, and the etching depth is a height difference between the surface of the piezoelectric layer outside the non-electrode connecting end of the top electrode of the resonator and the surface of the piezoelectric layer inside the non-electrode connecting end of the top electrode of the resonator in the thickness direction of the resonator.
5. The assembly of claim 1, wherein:
the first resonator is not provided with a temperature compensation layer; or alternatively
The second resonator is not provided with a temperature compensation layer.
6. The assembly of any one of claims 1-5, wherein:
the top film layer is a process layer, and the process layer covers the top electrode of the resonator; or
The top film layer is a top electrode of the resonator.
7. A method of manufacturing a bulk acoustic wave resonator assembly, the assembly comprising a first resonator and a second resonator, both being bulk acoustic wave resonators and each having a plurality of film layers including a top film layer disposed on top of the respective resonator, only one of the first resonator and the second resonator being provided with a temperature compensated layer, the method comprising:
and a thickness reduction step: the thickness of the top film layer of the first resonator and/or the second resonator is reduced.
8. The method of 7, wherein:
the thickness reduction step is a trim step.
9. The method of 8, wherein the trim step comprises:
simultaneously thinning the top film layers of the first resonator and the second resonator by utilizing a trim process until one of the first resonator and the second resonator reaches a target frequency;
providing a barrier layer on the one resonator, the barrier layer covering a top film layer of the one resonator;
thinning a thickness of a top film layer of the other one of the first resonator and the second resonator to a predetermined value using a trim process, the predetermined value corresponding to a target frequency of the other resonator;
removing the remaining barrier layer on the one resonator.
10. The method of claim 8, wherein the trim step comprises:
providing a first barrier layer on one of the first resonator and the second resonator, the first barrier layer covering at least a top film layer of the one resonator;
thinning a thickness of a top film layer of the other of the first resonator and the second resonator to a second predetermined value using a trim process, the second predetermined value corresponding to a predetermined frequency of the other resonator;
removing the first barrier layer remaining on the one resonator;
providing a second barrier layer on the another resonator, the second barrier layer covering at least a top film layer of the another resonator;
thinning the thickness of the top film layer of the one resonator to a first predetermined value corresponding to a predetermined frequency of the one resonator using a trim process;
removing the second barrier layer remaining on the another resonator.
11. The method of 8, wherein the trim step comprises:
providing a first barrier layer at one of a first resonator and a second resonator, the first barrier layer covering a top film layer of the one resonator, a thickness of the top film layer of the one resonator having a first initial value and the one resonator having a first initial predetermined frequency corresponding to the first initial value;
thinning a thickness of a top film layer of the other of the first resonator and the second resonator to a second initial value using a trim process, the second initial value corresponding to a second initial predetermined frequency of the other resonator;
removing the first barrier layer remaining on the one resonator;
and simultaneously thinning the top film layer of the first resonator and the top film layer of the second resonator by utilizing a trim process so as to enable the first resonator and the second resonator to simultaneously reach respective preset frequencies.
12. The method of claim 8, wherein:
in the trim step, the etching depth of the piezoelectric layer of the first resonator is different from the etching depth of the piezoelectric layer of the second resonator, and the etching depth is a height difference between the surface of the piezoelectric layer outside the non-electrode connecting end of the top electrode of the resonator and the surface of the piezoelectric layer inside the non-electrode connecting end of the top electrode of the resonator in the thickness direction of the resonator.
13. The method of any one of claims 7-12, wherein:
the first resonator is not provided with a temperature compensation layer.
14. The method of any one of claims 7-12, wherein:
the second resonator is not provided with a temperature compensation layer.
15. The method according to any of claims 7-12, further comprising the step of:
leaving a margin in the thickness of the top film layer under the remaining barrier layer.
16. A filter comprising a bulk acoustic wave resonator assembly according to any one of claims 1-6.
17. An electronic device comprising the filter of 16 or the bulk acoustic wave resonator assembly of any one of claims 1-6.
The electronic device includes, but is not limited to, intermediate products such as a radio frequency front end and a filtering and amplifying module, and terminal products such as a mobile phone, WIFI and an unmanned aerial vehicle.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (17)
1. A bulk acoustic wave resonator assembly comprising:
a first resonator and a second resonator, both being bulk acoustic wave resonators and each having a plurality of film layers including a top film layer disposed on top of the corresponding resonator,
wherein:
only one of the first resonator and the second resonator is provided with a temperature compensation layer; and is
The thickness of the top film layer of the first resonator is different from the thickness of the top film layer of the second resonator.
2. The assembly of claim 1, wherein:
the first resonator has the same frequency as the second resonator.
3. The assembly of claim 1, wherein:
the frequencies of the first resonator and the second resonator have a predetermined difference.
4. The assembly of claim 1, wherein:
the etching depth of the piezoelectric layer of the first resonator is different from the etching depth of the piezoelectric layer of the second resonator, and the etching depth is a height difference between the surface of the piezoelectric layer outside the non-electrode connecting end of the top electrode of the resonator and the surface of the piezoelectric layer inside the non-electrode connecting end of the top electrode of the resonator in the thickness direction of the resonator.
5. The assembly of claim 1, wherein:
the first resonator is not provided with a temperature compensation layer; or
The second resonator is not provided with a temperature compensation layer.
6. The assembly of any one of claims 1-5, wherein:
the top film layer is a process layer, and the process layer covers a top electrode of the resonator; or
The top film layer is a top electrode of the resonator.
7. A method of manufacturing a bulk acoustic wave resonator assembly, the assembly comprising a first resonator and a second resonator, both being bulk acoustic wave resonators and each having a plurality of film layers including a top film layer disposed on top of the respective resonator, only one of the first resonator and the second resonator being provided with a temperature compensated layer, the method comprising:
and a thickness reduction step: the thickness of the top film layer of the first resonator and/or the second resonator is reduced.
8. The method of claim 7, wherein:
the thickness reduction step is a trim step.
9. The method of claim 8, wherein the trim step comprises:
simultaneously thinning the top film layers of the first resonator and the second resonator by utilizing a trim process until one of the first resonator and the second resonator reaches a target frequency;
providing a barrier layer on the one resonator, the barrier layer covering a top film layer of the one resonator;
thinning a thickness of a top film layer of the other one of the first resonator and the second resonator to a predetermined value using a trim process, the predetermined value corresponding to a target frequency of the other resonator;
removing the remaining barrier layer on the one resonator.
10. The method of claim 8, wherein the trim step comprises:
providing a first barrier layer on one of the first resonator and the second resonator, the first barrier layer covering at least a top film layer of the one resonator;
thinning a thickness of a top film layer of the other of the first resonator and the second resonator to a second predetermined value using a trim process, the second predetermined value corresponding to a predetermined frequency of the other resonator;
removing the first barrier layer remaining on the one resonator;
providing a second barrier layer on the another resonator, the second barrier layer covering at least a top film layer of the another resonator;
thinning the thickness of the top film layer of the one resonator to a first predetermined value using a trim process, the first predetermined value corresponding to a predetermined frequency of the one resonator;
removing the second barrier layer remaining on the another resonator.
11. The method of claim 8, wherein the trim step comprises:
providing a first barrier layer at one of a first resonator and a second resonator, the first barrier layer covering a top film layer of the one resonator, a thickness of the top film layer of the one resonator having a first initial value and the one resonator having a first initial predetermined frequency corresponding to the first initial value;
thinning a thickness of a top film layer of the other of the first resonator and the second resonator to a second initial value using a trim process, the second initial value corresponding to a second initial predetermined frequency of the other resonator;
removing the first barrier layer remaining on the one resonator;
and simultaneously thinning the top film layer of the first resonator and the top film layer of the second resonator by utilizing a trim process so as to enable the first resonator and the second resonator to simultaneously reach respective preset frequencies.
12. The method of claim 8, wherein:
in the trim step, the etching depth of the piezoelectric layer of the first resonator is different from the etching depth of the piezoelectric layer of the second resonator, and the etching depth is a height difference between the surface of the piezoelectric layer outside the non-electrode connecting end of the top electrode of the resonator and the surface of the piezoelectric layer inside the non-electrode connecting end of the top electrode of the resonator in the thickness direction of the resonator.
13. The method of any one of claims 7-12, wherein:
the first resonator is not provided with a temperature compensation layer.
14. The method of any one of claims 7-12, wherein:
the second resonator is not provided with a temperature compensation layer.
15. The method according to any of claims 7-12, further comprising the step of:
leaving a margin in the thickness of the top film layer under the remaining barrier layer.
16. A filter comprising the bulk acoustic wave resonator assembly of any one of claims 1-6.
17. An electronic device comprising the filter of claim 16, or the bulk acoustic wave resonator assembly of any of claims 1-6.
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