CN114442435A - Method for calculating thickness of photoresist spray type gluing film - Google Patents
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- CN114442435A CN114442435A CN202210111078.5A CN202210111078A CN114442435A CN 114442435 A CN114442435 A CN 114442435A CN 202210111078 A CN202210111078 A CN 202210111078A CN 114442435 A CN114442435 A CN 114442435A
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000004026 adhesive bonding Methods 0.000 title claims abstract description 20
- 239000007921 spray Substances 0.000 title claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 33
- 238000005507 spraying Methods 0.000 claims abstract description 21
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000007664 blowing Methods 0.000 claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 45
- 229910052757 nitrogen Inorganic materials 0.000 claims description 22
- 239000000243 solution Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000002474 experimental method Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 6
- 238000004364 calculation method Methods 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- 239000012895 dilution Substances 0.000 claims description 3
- 238000010790 dilution Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 208000001491 myopia Diseases 0.000 claims description 3
- 230000004379 myopia Effects 0.000 claims description 3
- 229960001948 caffeine Drugs 0.000 claims 1
- RYYVLZVUVIJVGH-UHFFFAOYSA-N trimethylxanthine Natural products CN1C(=O)N(C)C(=O)C2=C1N=CN2C RYYVLZVUVIJVGH-UHFFFAOYSA-N 0.000 claims 1
- 239000000047 product Substances 0.000 abstract description 7
- 239000012467 final product Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
The invention discloses a method for calculating the thickness of a photoresist spray type gluing film, which comprises the following steps: measure the loss phi1Wherein phi1The loss phi is measured as the loss in the spraying process2Wherein phi2The loss phi is measured as the loss of the blowing3Wherein phi3For the collision loss, the whole loss formula is obtained: phi is equal to phi1+φ2+φ3And substituting a formula into a specific numerical value to calculate the thickness of the photoresist coating film. According to the invention, the condition of the final product gluing thickness is obtained by analyzing each loss amount in the gluing process, and the control is carried out according to the specific condition, so that the yield of the whole batch of products is improved.
Description
Technical Field
The invention belongs to the field of semiconductor manufacturing, and particularly relates to a method for calculating the thickness of a photoresist spray type gluing film.
Background
The semiconductor manufacturing process comprises wafer manufacturing, gluing, photoetching, etching, diffusion, ion implantation, thin film deposition and other processes. Wherein the photolithography process is an important pattern forming step. The photolithography process is a key process in semiconductor manufacturing. Photolithography is a process of transferring a geometric pattern on a mask to a photosensitive thin film material (commonly referred to as a photoresist) coated on the surface of a semiconductor wafer. The main steps of the photolithographic patterning are resist coating, exposure and development. The spray type glue coating method has the characteristics of high material utilization rate, no influence by the appearance of a base material, good repeatability, large coating area and the like, and is widely used in the photoetching process. The thickness of the photoresist film directly affects the photolithography process, and is an important production operation parameter in the semiconductor manufacturing industry.
In the existing gluing process, the thickness of the film is usually obtained according to set process parameters, and real-time monitoring cannot be carried out in the production process. Only after the development is finished has the opportunity to detect for the first time. If the product does not meet the expectation, the product can only be cleaned and then coated with glue, and the yield of the product is influenced.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and the method is used for analyzing each loss in the re-gluing process and obtaining the condition of the gluing thickness of the final product, and controlling according to specific conditions to improve the yield of the whole batch of products.
In order to achieve the purpose, the invention provides the following technical scheme:
1. a method for calculating the thickness of a photoresist spray type gluing film is characterized by comprising the following steps: the method comprises the following steps:
s1, obtaining the known content, wherein the film thickness is equal to the volume of the photoresist divided by the surface area of the wafer, and then subtracting the loss:
h is the thickness of the photoresist film, V is the volume of the photoresist, S is the surface area of the wafer, phi is the loss amount, and various loss amounts are calculated and taken during the production of the photoresist coating film;
s2, measuring the loss phi1Wherein phi1Setting the travel track of the nozzle to be a rectangle and the wafer to be sprayed to be a circle for the loss in the spraying process, wherein the loss phi in the spraying process is1Equal to the area of the nozzle moving track rectangle multiplied by the repetition times minus the area of the circle multiplied by the film thickness, the nozzle moving track is set to be square, the side length is the diameter of the circle in the specific process implementation process, and the side length is set to be 2RSubstituting into the formula:
calculate to obtain phi1A value of (d);
s3, measuring the loss phi2Wherein phi2The loss amount of the blowing can influence the blowing loss phi2The factors of (a) are: volume V of photoresist dropletmDistance L from nozzle to wafer surface, ambient temperature T, and velocity v of photoresist dropletsNAnd photoresist solution density ρ, i.e.
In general, Vm、L、T、VNRho index in a fixed system, its value is not changed greatly, and its myopia constant is phi2And t is in linear relation to satisfy
The data obtained by the experiment is combined with least square fitting to obtain:
in the formula, xtThe time required in the spray type gluing process;
calculate to obtain phi2A value of (d);
s4, measuring the loss phi3Wherein phi3Impact on the collision loss phi as an amount of collision loss3The factors of (a) are: surface tension delta of the photoresist solution, density rho of the photoresist solution, flow velocity v of the photoresist solution, viscosity mu of the photoresist droplets and diameter d of the photoresist droplets, i.e.
In practice, the main factor influencing the collision loss φ 3 is the nitrogen flow rate, and the equation is simplified to
The data obtained by the experiment is combined with least square fitting to obtain
Calculate to obtain phi3A value of (d);
s5, obtaining a whole loss formula according to the steps: phi is equal to phi1+φ2+φ3Integrating the above formulas to obtain:
the thickness of the photoresist coating film can be calculated by substituting the formula into a specific numerical value.
Preferably, the loss amount φ in S21This means that the nozzle path is set to be rectangular and the wafer surface is round during the spraying process, thereby causing losses.
Preferably, the loss amount φ in S32Under the action of nitrogen, part of small photoresist droplets are taken away by the nitrogen and are not deposited on the surface of the wafer.
Preferably, the photoresist droplet velocity in S3 is equal to the nitrogen flow rate during the measurement.
Preferably, the influencing factor in S3 depends on specific working conditions, and influences the ratio V under stable working conditionsm,L,T,vNρ is small, which is considered as a constant value in the calculation process.
Preferably, the loss amount φ in S43The method refers to the situation that in the process of contacting the surface of a wafer, one part of photoresist droplets is deposited on the surface of the wafer, and the other part of the photoresist droplets bounces and is not deposited on the surface of the wafer.
Preferably, the surface tension δ of the photoresist solution in S4 is related to the chemical properties of the photoresist and is regarded as a constant; the density rho of the photoresist solution is related to the physicochemical property and dilution ratio of the photoresist; the flow velocity v of the photoresist solution is related to the physicochemical properties of the photoresist and the nitrogen flow velocity; the viscosity mu of the photoresist droplets is related to the chemical property and nitrogen flow rate of the photoresist; the diameter d of the photoresist droplet is related to the physicochemical properties of the photoresist.
Preferably, the main factor influencing the loss of the wind blowing in S3 is time, and there is a distribution in which there are countless photoresist droplets, some of which are blown away by the wind and do not fall on the wafer surface, and the droplets do not fall on the wafer surface, and e (x) is np, and p is a probability of not falling on the wafer surface, so the loss amount is near to the time t and the nitrogen gas flow rate xNAs a function of (c).
Preferably, x in S3tFor the time taken for the entire spray-coating pass, V is the volume of the photoresist.
Preferably, x in S4NThe nitrogen flow rate is adopted, and V is the volume of the photoresist consumed in the spray type glue coating process.
The invention has the technical effects and advantages that:
according to the method for calculating the thickness of the photoresist spray type gluing film, provided by the invention, each loss in the process of re-gluing is analyzed, a corresponding calculation formula is obtained through experiments, calculation can be respectively carried out according to specific conditions, so that the condition of gluing thickness of a final product is obtained in the production process, and if the thickness deviation is large, a worker immediately stops the gluing action of an instrument to avoid influencing the quality of subsequent products, so that the yield of the whole batch of products is improved.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
A method for calculating the thickness of a photoresist spray type gluing film comprises the following steps:
as is known, the film thickness is equal to the photoresist volume divided by the wafer surface area, minus the amount of loss.
H is the thickness of the photoresist film, V is the volume of the photoresist, S is the surface area of the wafer, phi is the loss amount, and various loss amounts are calculated and taken during the production of the photoresist coating film;
s2, measuring the loss phi1Wherein phi1The loss in the spraying process refers to the loss caused by setting the traveling route of the nozzle to be rectangular and the surface of the wafer to be round in the spraying process; the traveling track of the nozzle is set to be a rectangle, the wafer to be sprayed is a circle, the wafer can be in any shape in practical operation, the circle is set for convenience of explanation, and in the spraying process, the spraying process loses phi1The area of the rectangle equal to the nozzle moving track is multiplied by the area obtained by subtracting the circle from the repetition times and then multiplied by the film thickness, the nozzle moving track is set to be square, the side length of the square is 2R of the diameter of the circle, and the formula is substituted into the square:
calculate to obtain phi1A value of (d);
s3, measuring the loss phi2Wherein phi2The loss amount of the wind blowing means that under the action of nitrogen, part of small photoresist droplets are taken away by the nitrogen and are not deposited on the surface part of the wafer, and the wind blowing loss phi can be influenced2The factors of (a) are: volume V of photoresist dropletmNozzle to waferDistance L of surface, ambient temperature T, velocity v of photoresist dropletNAnd photoresist solution density ρ, i.e.
In general, Vm、L、T、VNRho indexes are in a set of fixed system, the change of the rho indexes is small, and the myopia constants are obtained; and because the main factor influencing the wind blowing loss is time, in a certain time t, numerous photoresist droplets always exist, part of photoresist droplets is blown away by wind and does not fall on the surface of the wafer, the droplets do not fall on the surface of the wafer and accord with two-term distribution, the expected value E (X) is np, and p is the probability of not falling on the surface of the wafer, so the loss amount is the time t and the nitrogen flow rate x is the near distanceNPhi 2 and t are in linear relation, satisfy
Through experiments:
the data obtained by the experiment is combined with least square fitting to obtain:
wherein xtCalculating the total time for spraying and calculating V is the volume of the photoresist2A value of (d);
s4, measuring the loss phi3Wherein phi3The collision loss is the part of the photoresist droplets which are deposited on the surface of the wafer and bounce up during the contact process of the photoresist droplets with the surface of the wafer, and the collision loss phi is influenced3The factors of (a) are: surface tension delta of the photoresist solution, density rho of the photoresist solution, flow velocity v of the photoresist solution, viscosity mu of the photoresist droplets and diameter d of the photoresist droplets, wherein the surface tension delta of the photoresist solution is related to the chemical properties of the photoresist,regarded as a constant; the density rho of the photoresist solution is related to the physicochemical property and dilution ratio of the photoresist; the flow velocity v of the photoresist solution is related to the physicochemical properties of the photoresist and the nitrogen flow velocity; the viscosity mu of the photoresist droplets is related to the chemical property and nitrogen flow rate of the photoresist; the diameter d of the photoresist droplets is related to the physicochemical properties of the photoresist; namely, it is
In practice, the main factor influencing the collision loss φ 3 is the nitrogen flow rate, and the equation is simplified to
Through simulation calculation and experiments:
the data obtained by the experiment is combined with least square fitting to obtain
Wherein xNCalculating to obtain phi in terms of nitrogen flow rate and V in terms of volume of photoresist consumed in the spray type gluing process3A value of (d);
s5, obtaining a whole loss formula according to the steps: phi is equal to phi1+φ2+φ3Integrating the above formulas to obtain:
the thickness of the photoresist coating film can be calculated by substituting the formula into a specific numerical value.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the invention.
Claims (10)
1. A method for calculating the thickness of a photoresist spray type gluing film is characterized by comprising the following steps: the method comprises the following steps:
s1, obtaining the known content, wherein the film thickness is equal to the volume of the photoresist divided by the surface area of the wafer, and then subtracting the loss:
h is the thickness of the photoresist film, V is the volume of the photoresist, S is the surface area of the wafer, phi is the loss amount, and various loss amounts are calculated and taken during the production of the photoresist coating film;
s2, measuring the loss phi1Wherein phi1Setting the travel track of the nozzle to be a rectangle and the wafer to be sprayed to be a circle for the loss in the spraying process, wherein the loss phi in the spraying process is1The area of the rectangle equal to the running track of the nozzle is multiplied by the repetition times, the area of the circle is subtracted by the repetition times, and then the area of the circle is multiplied by the film thickness, the running track of the nozzle is set to be a square, the side length of the square is the diameter of the circle in the specific process implementation process, the side length is set to be 2R, and the formula is substituted into the square:
calculate to obtain phi1A value of (d);
s3, measuring the loss phi2Therein is disclosedMiddle phi2The loss amount of the blowing can influence the blowing loss phi2The factors of (a) are: volume V of photoresist dropletmDistance L from nozzle to wafer surface, ambient temperature T, and velocity v of photoresist dropletsNAnd photoresist solution density ρ, i.e.
In general, Vm、L、T、VNRho index in a fixed system, its value is not changed greatly, and its myopia constant is phi2And t is in linear relation to satisfy
The data obtained by the experiment is combined with least square fitting to obtain:
in the formula, xtThe time required in the spray type gluing process;
calculate to obtain phi2A value of (d);
s4, measuring the loss phi3Wherein phi3Impact loss phi is the amount of impact loss3The factors of (a) are: the surface tension delta of the photoresist solution, the density rho of the photoresist solution, the flow velocity v of the photoresist solution, the viscosity mu of the photoresist droplets and the diameter d of the photoresist droplets, i.e. the
In practice, the main factor influencing the collision loss φ 3 is the nitrogen flow rate, and the equation is simplified to
The data obtained by the experiment can be obtained by combining the least square method
Calculate to obtain phi3A value of (d);
s5, obtaining a whole loss formula according to the steps: phi is equal to phi1+φ2+φ3Integrating the above formulas to obtain:
the thickness of the photoresist coating film can be calculated by substituting the formula into a specific numerical value.
2. The method of calculating the thickness of a photoresist spray coating film according to claim 1, wherein: the amount of loss φ in S21The method refers to the loss caused by setting the traveling route of a nozzle to be rectangular and the surface of a wafer to be round in the spraying process.
3. The method of calculating the thickness of a photoresist spray coating film according to claim 1, wherein: the amount of loss φ in S32Under the action of nitrogen, part of small photoresist droplets are taken away by the nitrogen and are not deposited on the surface of the wafer.
4. The method of calculating the thickness of a photoresist spray coating film according to claim 1, wherein: the photoresist droplet velocity in S3 was determined to be equal to the flow rate of nitrogen.
5. The method of claim 1, wherein V is the thickness of the photoresist spray coating filmm,L,T,vNρ is: the influencing factors in the S3 are determined according to specific toolsAnd in the case of stable working conditions, the influence is small, and the influence is regarded as a constant value in the calculation process.
6. The method of calculating the thickness of a photoresist spray coating film according to claim 1, wherein: the amount of loss φ in S43The method refers to the situation that in the process of contacting the surface of a wafer, one part of photoresist droplets is deposited on the surface of the wafer, and the other part of the photoresist droplets bounces and is not deposited on the surface of the wafer.
7. The method of claim 1, wherein the step of calculating the thickness of the photoresist spray-on coating film comprises the steps of: the surface tension delta of the photoresist solution in the S4 is related to the chemical property of the photoresist and is regarded as a constant; the density rho of the photoresist solution is related to the physicochemical property and dilution ratio of the photoresist; the flow velocity v of the photoresist solution is related to the physicochemical properties of the photoresist and the nitrogen flow velocity; the viscosity mu of the photoresist droplets is related to the chemical properties of the photoresist and the nitrogen flow rate; the diameter d of the photoresist droplet is related to the physicochemical properties of the photoresist.
8. The method of claim 1, wherein the step of calculating the thickness of the photoresist spray-on coating film comprises the steps of: the main factor influencing the wind blowing loss in S3 is time, and in a certain time t, there are numerous photoresist droplets, some of which are always blown away by wind and do not fall on the wafer surface, and the droplets do not fall on the wafer surface and conform to a two-term distribution, where e (x) is np, and p is the probability of not falling on the wafer surface, so the loss amount is near to the time t and the nitrogen flow rate xNAs a function of (c).
9. The method of calculating the thickness of a photoresist spray coating film according to claim 1, wherein: x in S3tFor the time taken for the entire spray-coating pass, V is the volume of the photoresist.
10. The method of claim 1, wherein the thickness of the photoresist spray coating film is calculatedIs characterized in that: x in S4NThe nitrogen flow rate is adopted, and V is the volume of the photoresist consumed in the spray type glue coating process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210111078.5A CN114442435B (en) | 2022-01-24 | Photoresist spray type glue coating film thickness calculation method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210111078.5A CN114442435B (en) | 2022-01-24 | Photoresist spray type glue coating film thickness calculation method |
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| CN114442435A true CN114442435A (en) | 2022-05-06 |
| CN114442435B CN114442435B (en) | 2024-06-28 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3405625A1 (en) * | 1984-02-16 | 1985-08-22 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR CONTROLLING AND REGULATING THE INSTALLATION OF DOPING GAS IN ELECTRICALLY CONDUCTING METAL LAYERS DURING THEIR PRODUCTION |
| CN102122116A (en) * | 2010-01-08 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | Method and system for automatically controlling thickness of optical resist |
| US20140307262A1 (en) * | 2013-04-12 | 2014-10-16 | Shimadzu Corporation | Surface processing progress monitoring system |
| US20150261896A1 (en) * | 2014-03-17 | 2015-09-17 | Kla-Tencor Corporation | Model for accurate photoresist profile prediction |
| JP2016080668A (en) * | 2014-10-22 | 2016-05-16 | 株式会社島津製作所 | Device and method for monitoring surface treatment state |
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3405625A1 (en) * | 1984-02-16 | 1985-08-22 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR CONTROLLING AND REGULATING THE INSTALLATION OF DOPING GAS IN ELECTRICALLY CONDUCTING METAL LAYERS DURING THEIR PRODUCTION |
| CN102122116A (en) * | 2010-01-08 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | Method and system for automatically controlling thickness of optical resist |
| US20140307262A1 (en) * | 2013-04-12 | 2014-10-16 | Shimadzu Corporation | Surface processing progress monitoring system |
| US20150261896A1 (en) * | 2014-03-17 | 2015-09-17 | Kla-Tencor Corporation | Model for accurate photoresist profile prediction |
| JP2016080668A (en) * | 2014-10-22 | 2016-05-16 | 株式会社島津製作所 | Device and method for monitoring surface treatment state |
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