CN114438463B - Chip vacuum coating device and coating method - Google Patents

Chip vacuum coating device and coating method Download PDF

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Publication number
CN114438463B
CN114438463B CN202210086876.7A CN202210086876A CN114438463B CN 114438463 B CN114438463 B CN 114438463B CN 202210086876 A CN202210086876 A CN 202210086876A CN 114438463 B CN114438463 B CN 114438463B
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sputtering
cathode
kinetic energy
magnet
electron
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CN114438463A (en
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崔岸
续迎萍
王振东
王宇
马耀辉
梁添锰钰
杨萌萌
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Jilin University
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Jilin University
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Abstract

The invention relates to a chip vacuum coating device and a coating method, wherein the device comprises a vacuum box body, a top electron emission cavity and a bottom sputtering cavity are communicated in the vacuum box body, and a primary electron emitter is arranged at the top of the top electron emission cavity; an electron kinetic energy accelerator for increasing kinetic energy for the primary electron emitter to emit electrons is arranged below the primary electron emitter in the top electron emission cavity; the cathode mechanism is arranged in the bottom sputtering cavity, cooling water circulating with the outside is arranged in the cathode mechanism and is positioned below the electron kinetic energy accelerator, argon is filled in the bottom sputtering cavity, a target material is arranged in the middle of the cathode mechanism, a cooling base station for cooling a workpiece is arranged at the lower part of the target material, and an acceleration sputtering ion channel is formed between the electron kinetic energy accelerator and the workpiece; the electric appliance cabinet is electrically connected with the primary electron emitter, the electron kinetic energy accelerator, the cathode mechanism, the vacuum system and the argon supply system. The invention satisfies chip hole 50:1 aspect ratio or more.

Description

Chip vacuum coating device and coating method
Technical Field
The invention relates to the technical field of chip coating, in particular to a chip vacuum coating device and a coating method.
Background
With the improvement of the performance and functions of chips, the application is continuously enlarged, and the volume is required to be reduced, so that the chips are promoted to develop towards the direction of a few nanometers, and the number of elements contained in the chips is required to be increased greatly, so that the requirements on chip processing equipment and processes are higher and higher, and the chip processing process needs to be performed with vacuum coating, masking, exposure and etching for many times. In many links, the aspect ratio of the hole is larger than 50. The existing vacuum sputtering coating technology usually adopts a planar or columnar magnetron target, and after argon ions impact the target, the kinetic energy of sputtered target atoms cannot meet the coating requirement of depositing the bottom of a deep hole or a deep groove, and even if an auxiliary negative bias function is added, the depth is not more than 20.
Currently, chemical vapor deposition and physical vapor deposition, including some auxiliary negative bias functions, can be used to achieve a hole aspect ratio of 20:1, but not 50:1 aspect ratio or more. Therefore, how to provide a vacuum coating apparatus for a chip to meet the requirement of processing a chip with a larger hole depth-to-width ratio is a problem that needs to be solved urgently by those skilled in the art.
Disclosure of Invention
Therefore, an object of the present invention is to provide a vacuum coating apparatus for a chip, which solves the problems that the vacuum coating apparatus and the existing method in the prior art cannot reach the chip holes 50: the vacuum coating requirement above the aspect ratio of 1 causes the problem of influencing the chip processing and manufacturing.
The invention provides a chip vacuum coating device, comprising:
the sputtering device comprises a vacuum box body, a sputtering device and a sputtering system, wherein the vacuum box body comprises a top electron emission cavity and a bottom sputtering cavity which are communicated with each other, and a primary electron emitter is arranged at the top of the top electron emission cavity;
the electron kinetic energy accelerator is arranged in the top electron emission cavity and is positioned below the primary electron emitter and used for increasing kinetic energy for the primary electron emitter to emit electrons;
the cathode mechanism is arranged in the bottom sputtering cavity, cooling water circulating with the outside is arranged in the cathode mechanism and is positioned below the electron kinetic energy accelerator, argon is filled in the bottom sputtering cavity, a target material is arranged in the middle of the cathode mechanism, a cooling base station is arranged at the lower part of the target material, a workpiece is arranged on the cooling base station, the centers of the primary electron emitter, the electron kinetic energy accelerator, the target material and the cooling base station are positioned on the same vertical straight line, and an acceleration sputtering ion channel is formed between the electron kinetic energy accelerator and the workpiece; and
and the electric appliance cabinet is electrically connected with the primary electron emitter, the electron kinetic energy accelerator, the cathode mechanism, a vacuum system for maintaining the vacuum in the vacuum box and an argon gas supply system.
According to the technical scheme, compared with the prior art, the invention discloses a chip vacuum coating device, wherein an electron kinetic energy accelerator is arranged below a primary electron emitter and is used for increasing kinetic energy of electrons emitted by the primary electron emitter, the electrons with increased kinetic energy move downwards at high speed and meet ions of target materials sputtered by a cathode, so that the kinetic energy of the ions of the sputtered materials is increased, and the ions are coated on a coated workpiece to form a coating layer. Because the sputtering target material ions obtain electron kinetic energy, the movement speed of the sputtering target material ions is increased, the coating requirements of deep holes or grooves of workpieces are met, and the chip holes 50: the vacuum coating requirement is more than 1 aspect ratio.
Furthermore, the target is cylindrical, and a channel for meeting accelerated electrons and sputtering target ions is formed in the cylinder of the target; the diameter of which is larger than the diameter of the workpiece.
Further, the primary electron emitter comprises a filament power supply, a ceramic insulating plate and a filament; the filament power supply is arranged on the outer wall of the top electron emission cavity and is electrically connected with the electric appliance cabinet; the ceramic insulating plate is arranged on the inner wall of the top electron emission cavity and is provided with a plurality of fixing holes, the filament is fixed in the fixing holes through conducting bolts, and two conducting bolts are reserved and used as electrodes and are connected with the filament power supply.
Furthermore, the electron kinetic energy accelerator comprises a high-voltage adjustable power supply and a high-voltage electrode plate; the high-voltage adjustable power supply is connected with the electric appliance cabinet, the number of the high-voltage electrode plates is two, the two high-voltage electrode plates are sequentially fixed on the inner wall of the top electron emission cavity through the insulating part, are positioned below the primary electron emitter and are electrically connected with the high-voltage adjustable power supply, and the high-voltage adjustable power supply is used for adjusting the electric field intensity between the two high-voltage electrode plates to control the speed of electron flowing through.
Furthermore, the two high-voltage electrode plates are molybdenum plates or tantalum plates, and the distance between the two high-voltage electrode plates is 400-500 mm.
Further, the electron kinetic energy accelerator provides high-voltage direct current of more than 10 KV.
Further, the cathode mechanism includes: the sputtering device comprises a cathode base, a sputtering cathode magnet and a sputtering cathode magnet driving mechanism, wherein the bottom of the cathode base is supported in a bottom sputtering cavity through an insulating leg, a target is fixed in the cathode base, the sputtering cathode magnet is a circular ring which is formed by two semicircular structures and surrounds the outside of the target, target ions are sputtered out of the outer wall of the target in a sliding mode through the sputtering cathode magnet driving mechanism, a sputtering electrode connected with a sputtering power supply is arranged at the top of the cathode base, and the sputtering power supply is electrically connected with an electric appliance cabinet.
Furthermore, each sputtering cathode magnet is driven synchronously by two sputtering cathode magnet driving mechanisms on the circumference, each sputtering cathode magnet driving mechanism comprises a bracket, a lead screw nut, a lead screw and a magnet group, a slide rail is arranged on the inner side of the bracket, the lead screw vertically rotates in the middle of the bracket, the lead screw nut is matched with the lead screw, a slide block sliding on the slide rail is arranged on the side, close to the bracket, of the lead screw nut, the lead screw nut is connected with the magnet group through a first magnetizer, and the magnet group is magnetically connected with the sputtering cathode magnets through a second magnetizer; the screw rods are driven by a motor, and the screw rods corresponding to the sputtering cathode magnet driving mechanisms in different groups are synchronously driven by a belt and a synchronous wheel.
Further, each of the magnet groups includes: magnet ring one and magnet ring two, magnet ring one end pass through magnetizer one with screw nut is fixed, the other end slide in on the negative pole seat outer wall, and with magnet ring two magnetism is connected, magnet ring two with sputtering cathode magnet passes through magnetizer two magnetism and connects, just magnetizer two is close to the negative pole seat side is provided with the rolling member.
Another objective of the present invention is to provide a method for vacuum coating a chip, which increases kinetic energy for electrons twice after the electrons are emitted from the top of a vacuum sputtering chamber, so that the accelerated electrons meet target ions sputtered from the bottom, increase the kinetic energy of the sputtered ions, and coat the target ions on a workpiece to form a coating layer.
According to the technical scheme, compared with the prior art, the invention discloses a chip vacuum coating method, which increases the kinetic energy of sputtering ions and ensures that the sputtering ions can meet the conditions of the chip holes 50: the vacuum coating requirement of the depth-to-width ratio is more than 1, and the processing quality of the chip is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a chip vacuum coating apparatus according to the present invention;
FIG. 2 is a schematic diagram showing the relative positions of the ceramic insulating plate, the filament and the high-voltage electrode plate;
FIG. 3 the accompanying drawings show a perspective view of the cathode mechanism;
FIG. 4 the drawing shows a top view of FIG. 3;
FIG. 5 the accompanying drawings show a cross-sectional view of the cathode mechanism;
FIG. 6 is a sectional view showing the internal structure of a cathode base;
FIG. 7 the accompanying drawings show a top view of FIG. 6;
FIG. 8 is a cross-sectional view of the cooling platform;
fig. 9 shows a schematic diagram of the structure of the argon ring.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise explicitly stated or limited, the terms "mounted," "connected," "fixed," and the like are to be construed broadly, e.g., as being permanently connected, detachably connected, or integral; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or may be connected through the use of two elements or the interaction of two elements. The specific meanings of the above terms in the present invention can be understood according to specific situations by those of ordinary skill in the art.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
Because the vacuum sputtering coating technology usually adopts a planar or columnar magnetic control target, after argon ions impact the target, the kinetic energy of sputtered target ions cannot meet the coating requirement of depositing the bottom of a deep hole or a deep groove, and even if an auxiliary negative bias function is added, the kinetic energy exceeds the depth of 20. The invention discloses a chip vacuum coating device.A electron kinetic energy accelerator is arranged below a primary electron emitter and used for increasing kinetic energy of electrons emitted by the primary electron emitter, and the electrons increasing the kinetic energy move downwards at high speed and meet target ions sputtered by a cathode, so that the kinetic energy of sputtered material ions is increased, and the sputtered material ions are coated on a coated workpiece to form a coating layer. Because the sputtering target material ions obtain electron kinetic energy, the movement speed of the sputtering target material ions is increased, the coating requirements of deep holes or grooves of workpieces are met, and the chip holes 50: the vacuum coating requirement is more than 1 aspect ratio.
An embodiment of the invention, as seen in fig. 1-7, includes: the electron source comprises a vacuum box body 1, wherein a top electron emission cavity and a bottom sputtering cavity are communicated in the vacuum box body 1, and a primary electron emitter 11 is arranged at the top of the top electron emission cavity; the electron kinetic energy accelerator 2 is arranged in the top electron emission cavity and positioned below the primary electron emitter 11, and the electron kinetic energy accelerator 2 is used for increasing kinetic energy of electrons emitted by the primary electron emitter 11; the cathode mechanism 3 is arranged in the bottom sputtering cavity, cooling water circulating from the outside (the cooling water is in a closed space formed by a target material and a cathode base of the cathode mechanism) is arranged in the bottom sputtering cavity and is positioned below the electron kinetic energy accelerator 2, argon gas is filled in the bottom sputtering cavity, the target material 31 is arranged in the middle of the cathode mechanism 3, the cooling base table 5 is arranged at the lower part of the target material 31, a workpiece G is arranged on the cooling base table 5, the centers of the primary electron emitter 11, the electron kinetic energy accelerator 2, the target material 31 and the cooling base table 5 are positioned on the same vertical straight line, and an acceleration sputtering ion channel is formed between the electron kinetic energy accelerator 2 and the workpiece G; and the electric appliance cabinet 4 is electrically connected with the primary electron emitter 11, the electron kinetic energy accelerator 2, the cathode mechanism 3, a vacuum system 6 for maintaining the vacuum in the vacuum box body 1 and an argon gas supply system 7.
The invention utilizes electrons to accelerate to obtain kinetic energy, further increases the kinetic energy of sputtering ions of the target, improves the coating depth, fully utilizes the sputtering coating principle, improves the sputtering coating principle on the basis, overcomes the problem of insufficient sputtering depth caused by insufficient sputtering kinetic energy of the magnetron target of the traditional vacuum sputtering coating equipment, improves the chip processing quality, and solves the problem of coating depth in chip processing.
Referring to fig. 5 and 6, the target 31 in the present invention is cylindrical, which may be a straight cylinder, a conical cylinder, etc., and a channel where accelerated electrons meet sputtered target ions is formed in the cylinder of the target 31; the diameter of which is greater than that of the workpiece G; ensuring that the sputtering area covers the workpiece.
Referring to fig. 1 and 2, in one embodiment of the present invention, the primary electron emitter 11 includes a filament power supply 111, a ceramic insulating plate 112, and a filament 113; the filament power supply 111 is arranged on the outer wall of the top electron emission cavity and is electrically connected with the electric appliance cabinet 4; the ceramic insulating plate 112 is installed on the inner wall of the top electron emission cavity, is 4-5mm thick, is provided with a plurality of fixing holes, and the filament 113 is fixed in the fixing holes through conductive bolts, and two conductive bolts are reserved as electrodes and are connected with the filament power supply 111. The filament in this embodiment may be tungsten filament, and the filament power supply 111 may have a current of 0-50A and an output voltage of 12V.
Referring to fig. 1, in another embodiment of the present invention, the electron kinetic energy accelerator 2 includes a high voltage adjustable power supply 21 and a high voltage electrode plate 22; the high-voltage adjustable power supply 21 is connected with the electric appliance cabinet 4, the number of the high-voltage electrode plates 22 is two, the two high-voltage electrode plates are sequentially fixed on the inner wall of the top electron emission cavity through an insulating part and are positioned below the primary electron emitter 11 and electrically connected with the high-voltage adjustable power supply 21, and the high-voltage adjustable power supply 21 is used for adjusting the electric field intensity between the two high-voltage electrode plates 22 to control the flowing speed of electrons. The high-voltage adjustable power supply 21 can be an EB-150-200-F50-B2.5 type high-voltage power supply, the input three-phase voltage is 380V, the output voltage is 0-150KV, and the output current is 200mA.
Advantageously, the two high voltage electrode plates 22 are molybdenum plates or tantalum plates, and have a plurality of through holes, and the distance between the two plates is 400mm-500mm, optionally 400mm. Two high-voltage electrode plates 22 are fixed on the inner wall of the top electron emission cavity through ceramic connectors, the upper plate is connected with the cathode of the power supply, and the lower plate is connected with the anode.
Advantageously, the electron kinetic energy accelerator 2 provides a high voltage direct current of more than 10KV, and connects the upper plate and the lower plate, and the distance between the primary electron emitter 11 and the workpiece G is determined according to the workpiece and process requirements, which may be 800mm in the embodiment of the present invention, thereby ensuring that the target sputtering ions can be sufficiently combined with the workpiece to form a coating film.
Referring to fig. 3-7, the cathode mechanism 3 includes: the sputtering device comprises a cathode base 32, a sputtering cathode magnet 33 and a sputtering cathode magnet driving mechanism 34, wherein the bottom of the cathode base 32 is supported in a bottom sputtering cavity through an insulating leg 35, a target 31 is fixed in the cathode base 32, the sputtering cathode magnet 33 is a circular ring which is formed by two semicircular structures and surrounds the outside of the target 31, target ions are sputtered out by sliding the sputtering cathode magnet driving mechanism 34 along the outer wall of the target 31 up and down, a sputtering electrode connected with a sputtering power source 321 is arranged at the top of the cathode base 32, and the sputtering power source 321 is positioned outside the bottom sputtering cavity and electrically connected with the electric appliance cabinet 4. The top and the bottom of the cathode base are sealed and fixed with the target through metal covers, the target is sealed through sealing rubber rings, and the metal covers are connected with the cathode base through bolts. The middle part of the metal cover is provided with a channel with the same diameter as the inside of the cylindrical target, the top metal cover is provided with a water outlet, the bottom metal cover is provided with a water inlet, cooling water is in a closed space formed by the target of the cathode mechanism and the cathode seat, the cooling water inside the cathode seat is led out through a pipeline and is connected with external cooling equipment, a box body water inlet pipe and a box body water outlet pipe are arranged in the bottom sputtering cavity, and the inlet and outlet water of the cathode seat can be correspondingly connected with the inlet and outlet water of the box body for cooling the cathode body.
In one embodiment of the invention, four insulating legs are uniformly distributed at the bottom of the cylindrical cathode mechanism to support the cylindrical cathode mechanism.
Referring to fig. 5, each of the sputtering cathode magnets 33 is driven synchronously by two sputtering cathode magnet driving mechanisms 34 on the circumference, each of the sputtering cathode magnet driving mechanisms 34 includes a bracket 341, a lead screw nut 344, a lead screw 345 and a magnet set, the bracket 341 has a slide rail 342 inside, the lead screw 345 vertically rotates in the middle of the bracket 341, the lead screw nut 344 cooperates with the lead screw 345, and a slide block 343 sliding on the slide rail 342 is disposed on the side close to the bracket 341, the lead screw nut 344 is connected to the magnet set by a first magnetizer D1, and the magnet set is magnetically connected to the sputtering cathode magnets 33 by a second magnetizer D2; the lead screws 345 are driven by a motor 36, and the lead screws 345 corresponding to the sputtering cathode magnet driving mechanisms 34 in different groups are synchronously driven by a belt 37 and a synchronous wheel 38.
Specifically, each of the magnet groups includes: one end of the first magnet ring 346 is fixed with the lead screw nut 344 through a first magnetizer D1, the other end of the first magnet ring 346 slides on the outer wall of the cathode base 32 and is magnetically connected with the second magnet ring 347, the second magnet ring 347 is magnetically connected with the sputtering cathode magnet 33 through a second magnetizer D2, a rolling member 348 is arranged on the side, close to the cathode base 32, of the second magnetizer D2, and the rolling member 348 can be a guide wheel or a guide block provided with a ball.
According to the invention, the first magnet ring 346 is positioned on the outermost side, two semi-ring forms are adopted for convenience in installation, the two semi-ring forms can be an upper semi-ring form and a lower semi-ring form, and are respectively fixed on the first magnetizer D1 through bolts, the first magnetizer D1 and the second magnetizer D2 can be stainless steel magnetic conductive materials, the first magnetizer is welded on the lead screw nut 344, the lead screw nut 344 is welded with the sliding block 343, the motor drives the lead screw to enable the whole body to move up and down, and a gap of 0.5mm is reserved between the first magnet ring 346 and a cathode base (the cathode base is made of non-magnetic stainless steel materials) so as to facilitate up and down movement. The magnet in the middle part is a magnet ring two 347, or two magnets in the upper and lower parts, and is fixed on the outer wall of the cathode seat 32 through bolts, and a gap of 0.5mm is also left between the magnet and the cathode seat. The innermost magnet is a sputtering cathode magnet 33, can also be an upper ring magnet and a lower ring magnet, is fixed on the second magnetizer D2 through bolts, and has a 0.5mm gap with the target material. The second magnetizer D2 is provided with a slide block, and the first magnet ring 346 drives the second magnet ring 347 and the sputtering cathode magnet 33 to move up and down along the cathode base together.
The synchronizing wheel is fixed on the screw rod, and the screw rod is driven by the motor, so that the two semi-ring magnets on the outermost side move up and down, and meanwhile, the inner annular magnet is driven to move up and down on the outer side of the target material, target material ions are uniformly sputtered, and the utilization rate of the target material is improved. The support 341 is connected to the inner wall of the bottom sputtering chamber in an insulating manner through four connecting plates 3411, and is distributed at equal angles. The bottom of the bracket is fixed on the inner wall of the bottom sputtering cavity through four insulating support columns.
In the embodiment of the invention, the four sets of screw rods and the bracket structure are arranged together and are respectively connected with the left and right two halves of circular ring magnets. The lead screw both ends all are provided with the bearing, and the bearing is installed on the support, and accessible motor drive synchronizing wheel rotates, makes the lead screw rotatory, is connected through the parallel key between motor and the synchronizing wheel, realizes the linkage through the belt between each synchronizing wheel.
In the above embodiments, the two annular magnets are prevented from attracting each other by a non-magnetic material (which may be teflon) therebetween.
Referring to fig. 8, the cooling base 5 at the bottom of the workpiece is a water-cooling base, and includes a grinding platform 51, a sealing plate 52, a water-cooling cavity 53, a base 54, a water inlet pipe 55, a water outlet pipe 56, a sealing rubber ring 57 and a fastening bolt 58; form water-cooling chamber 53 in the base 54, water-cooling chamber 53 bottom inserts inlet tube 55 and outlet pipe 56, and outlet pipe insertion length is greater than inlet tube insertion length, guarantees that inside cooling water obtains the circulation, takes away the heat of work piece, and water-cooling chamber 53 top is grinding platform 51, work piece G is fixed in grinding platform 51 on, and grinding platform 51 is sealed through sealed rubber ring 57 with the base, and is fixed through fastening bolt 58. The cooling base station is connected with external cooling equipment, and the same external cooling equipment can be connected inside the cooling base station and the cathode mechanism.
Referring to fig. 9, the argon gas supply system 7 of the present invention supplies argon gas by installing an argon gas ring 71 in the vacuum chamber 1, the bottom sputtering chamber of the present invention is filled with argon gas and simultaneously reaches the vacuum degree required by the sputtering process, the top electron emission chamber maintains a high vacuum state, and the argon gas diffused to the upper portion is pumped away to maintain the high vacuum degree. The vacuum degree of the bottom in the vacuum box body is lower than that of the top, the sputtering cavity at the bottom meets the requirement of the vacuum degree of sputtering work, and the argon filling amount needs to meet the process requirement. The argon ring 71 is provided with a plurality of gas outlets which are arranged at equal intervals, so that the gas outlet is ensured to be uniform, the argon ring 71 can be arranged on the metal cover at the top of the cathode base and can also be suspended above the metal cover at the top of the cathode base through a supporting piece.
The invention also provides a chip vacuum coating method, which increases kinetic energy for electrons for the second time after the electrons are emitted from the top of the vacuum sputtering chamber, so that the accelerated electrons meet target ions sputtered from the bottom, the kinetic energy of the sputtered ions is increased, and the kinetic energy is coated on a workpiece to form a coating layer.
When the vacuum sputtering device is used, the industrial control computer of the electric appliance cabinet 4 starts the vacuum system 6 to control, the vacuum degree of the top electron emission cavity and the vacuum degree of the bottom sputtering cavity can be separately controlled, the electron emission vacuum system and the sputtering cavity vacuum system are started according to the use requirement, and when the vacuum degree of the electron emission cavity reaches the working vacuum degree (1X 10) -3 Pa), the industrial control computer turns on the filament power supply to make the filament emit electrons thermally; when the vacuum of the sputtering cavity reaches the sputtering working vacuum degree (1X 10) -3 Pa), the industrial control computer starts the argon supply system to make Ar gas enter the argon gas ring through the process gas pipe and diffuse in the vacuum box through the gas outlet on the argon gas ring, when the sputtering vacuum degree (2X 10) is reached -1 Pa), the industrial control computer starts the sputtering power supply and starts the high-voltage adjustable power supply, and the high-voltage adjustable power supply is set according to the process requirementsIn the embodiment, the operation state of 55kv,20mA is adopted. At the moment, the first magnet ring drives the sputtering cathode magnet to reciprocate up and down under the driving of the motor, the movement speed is 1cm/min, therefore, the hot electrons emitted by the primary electron emitter increase the kinetic energy through the electrons supplied by the electron kinetic energy accelerator, the electrons which increase the kinetic energy move downwards at high speed to meet the ions of the target material sputtered by the cathode, and further the kinetic energy of the ions of the sputtering material is increased, and the ions are coated on the workpiece to be coated to form a coating layer. Because the sputtering target material ions obtain electron kinetic energy, the movement speed of the sputtering target material ions is increased, the coating requirement of the deep hole or the groove of the workpiece is realized, and the chip hole 50:1 aspect ratio or more.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims (9)

1. A chip vacuum coating device is characterized by comprising:
the electron source sputtering device comprises a vacuum box body (1), wherein a top electron emission cavity and a bottom sputtering cavity are communicated in the vacuum box body (1), and a primary electron emitter (11) is arranged at the top of the top electron emission cavity;
the electron kinetic energy accelerator (2) is arranged in the top electron emission cavity and is positioned below the primary electron emitter (11) and used for increasing kinetic energy when the primary electron emitter (11) emits electrons;
the cathode mechanism (3) is arranged in the bottom sputtering cavity, cooling water circulating with the outside is arranged in the cathode mechanism (3), the cathode mechanism is located below the electron kinetic energy accelerator (2), argon gas is filled in the bottom sputtering cavity, a target (31) is arranged in the middle of the cathode mechanism (3), a cooling base table (5) is placed on the lower portion of the target (31), a workpiece (G) is installed on the cooling base table (5), centers of the primary electron emitter (11), the electron kinetic energy accelerator (2), the target (31) and the cooling base table (5) are located on the same vertical straight line, and an acceleration sputtering ion channel is formed between the electron kinetic energy accelerator (2) and the workpiece (G); and
the electric appliance cabinet (4), the electric appliance cabinet (4) is electrically connected with the primary electron emitter (11), the electron kinetic energy accelerator (2), the cathode mechanism (3), a vacuum system (6) for maintaining vacuum in the vacuum box body (1) and an argon gas supply system (7);
the electron kinetic energy accelerator (2) comprises a high-voltage adjustable power supply (21) and a high-voltage electrode plate (22); the high-voltage adjustable power supply (21) is connected with the electric appliance cabinet (4), the number of the high-voltage electrode plates (22) is two, the two high-voltage electrode plates are sequentially fixed on the inner wall of the top electron emission cavity through an insulating part and are positioned below the primary electron emitter (11) and electrically connected with the high-voltage adjustable power supply (21), and the high-voltage adjustable power supply (21) is used for adjusting the electric field intensity between the two high-voltage electrode plates (22) to control the speed of electron flowing through.
2. The vacuum chip coating apparatus according to claim 1, wherein the target (31) has a cylindrical shape, and a channel where accelerated electrons and sputtered target ions meet is formed in the cylindrical shape of the target (31); the diameter of which is greater than the diameter of the workpiece (G).
3. The vacuum deposition apparatus for chips according to claim 1, wherein the primary electron emitter (11) comprises a filament power supply (111), a ceramic insulating plate (112) and a filament (113); the filament power supply (111) is arranged on the outer wall of the top electron emission cavity and is electrically connected with the electric appliance cabinet (4); the ceramic insulating plate (112) is installed on the inner wall of the top electron emission cavity, a plurality of fixing holes are formed in the ceramic insulating plate, the lamp filament (113) is fixed in the fixing holes through conducting bolts, and two conducting bolts are reserved and used as electrodes and connected with the lamp filament power supply (111).
4. The vacuum coating apparatus for chips according to claim 1, wherein the two high voltage electrode plates (22) are molybdenum plates or tantalum plates with a distance of 400mm-500mm.
5. The vacuum coating device for chips according to any one of claims 1 to 4, wherein the electron kinetic energy accelerator (2) provides a high voltage direct current of more than 10 KV.
6. A vacuum coating apparatus for chips according to any of claims 2 to 4, wherein the cathode mechanism (3) comprises: cathode base (32), sputtering cathode magnet (33) and sputtering cathode magnet actuating mechanism (34), cathode base (32) bottom is supported in the bottom sputtering cavity through insulating leg (35), target (31) are fixed in cathode base (32), sputtering cathode magnet (33) be two semi-circular structures constitute surround in the outside ring of target (31), through sputtering cathode magnet actuating mechanism (34) are followed target (31) outer wall slides from top to bottom and sputters the target ion, the sputtering electrode that is connected with sputtering power supply (321) has at cathode base (32) top, sputtering power supply (321) with electrical cabinet (4) electric connection.
7. The vacuum film plating device for chips as defined in claim 6, wherein each of the sputtering cathode magnets (33) is driven synchronously by two sputtering cathode magnet driving mechanisms (34) on the circumference, each of the sputtering cathode magnet driving mechanisms (34) comprises a bracket (341), a lead screw nut (344), a lead screw (345) and a magnet set, the bracket (341) has a slide rail (342) on the inner side, the lead screw (345) vertically rotates in the middle of the bracket (341), the lead screw nut (344) is engaged with the lead screw (345), and a slide block (343) sliding on the slide rail (342) is arranged on the side close to the bracket (341), the lead screw nut (344) is connected with the magnet set by a first magnetizer (D1), and the magnet set is magnetically connected with the sputtering cathode magnet (33) by a second magnetizer (D2); the lead screws (345) are driven by a motor (36), and the lead screws (345) corresponding to the sputtering cathode magnet driving mechanisms (34) in different groups are synchronously driven by a belt (37) and a synchronous wheel (38).
8. The apparatus of claim 7, wherein each of the magnet sets comprises: one end of the first magnet ring (346) is fixed with the lead screw nut (344) through a first magnetizer (D1), the other end of the first magnet ring (346) slides on the outer wall of the cathode base (32) and is magnetically connected with the second magnet ring (347), the second magnet ring (347) is magnetically connected with the sputtering cathode magnet (33) through a second magnetizer (D2), and a rolling piece (348) is arranged on the side, close to the cathode base (32), of the second magnetizer (D2).
9. A method for vacuum coating a chip, comprising the apparatus of any one of claims 1 to 8, wherein kinetic energy is secondarily increased for electrons after the electrons are emitted from the top of the vacuum sputtering chamber, so that the accelerated electrons meet with target ions sputtered from the bottom, the kinetic energy of the sputtered ions is increased, and the target ions are coated on a workpiece to form a coating layer.
CN202210086876.7A 2022-01-25 2022-01-25 Chip vacuum coating device and coating method Active CN114438463B (en)

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CN107955938A (en) * 2018-01-03 2018-04-24 吉林大学 Air cylinder sleeve of engine inner cavity vacuum reaction magnetic control sputtering film plating device and method

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US6599399B2 (en) * 1997-03-07 2003-07-29 Applied Materials, Inc. Sputtering method to generate ionized metal plasma using electron beams and magnetic field
WO2009150997A1 (en) * 2008-06-11 2009-12-17 株式会社アルバック Sputtering apparatus

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US5840167A (en) * 1995-08-14 1998-11-24 Lg Semicon Co., Ltd Sputtering deposition apparatus and method utilizing charged particles
US6238526B1 (en) * 1999-02-14 2001-05-29 Advanced Ion Technology, Inc. Ion-beam source with channeling sputterable targets and a method for channeled sputtering
CN102534514A (en) * 2012-02-03 2012-07-04 长春工业大学 Method for plating films of multi-arc ion plating
CN107022741A (en) * 2016-02-01 2017-08-08 沈阳科友真空技术有限公司 A kind of PEMS plasma enhancings magnetic-controlled sputtering coating equipment
CN107955938A (en) * 2018-01-03 2018-04-24 吉林大学 Air cylinder sleeve of engine inner cavity vacuum reaction magnetic control sputtering film plating device and method

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