CN114438454A - Germanium-tin-like ternary alloy and preparation method thereof - Google Patents

Germanium-tin-like ternary alloy and preparation method thereof Download PDF

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CN114438454A
CN114438454A CN202210095231.XA CN202210095231A CN114438454A CN 114438454 A CN114438454 A CN 114438454A CN 202210095231 A CN202210095231 A CN 202210095231A CN 114438454 A CN114438454 A CN 114438454A
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heat source
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张超
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Xian University of Science and Technology
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C23C14/5813—Thermal treatment using lasers

Abstract

The invention relates to a germanium-tin-like ternary alloy and a preparation method thereof, wherein the preparation method comprises the following steps: depositing a built-in heat source layer on a target substrate; depositing a GeSn epitaxial layer on the built-in heat source layer; depositing a protective layer on the GeSn epitaxial layer; heating a sample formed by the target substrate, the built-in heat source layer, the GeSn epitaxial layer and the protective layer to a target temperature; laser scanning is carried out on the built-in heat source layer and the GeSn epitaxial layer through the protective layer by utilizing a laser recrystallization technology, so that the built-in heat source layer is melted and diffused between the GeSn epitaxial layer and the protective layer; and removing the protective layer and the built-in heat source layer to form the germanium-tin-like ternary alloy. The preparation method of the germanium-tin ternary alloy can obtain a high-quality germanium-tin ternary alloy epitaxial material, effectively reduces the high heat energy cost and high equipment investment cost of the laser recrystallization technology in the application of preparing the high-quality germanium-tin ternary alloy epitaxial layer, and expands the application range of the laser recrystallization technology in solving the problem of large lattice mismatch epitaxial quality.

Description

Germanium-tin-like ternary alloy and preparation method thereof
Technical Field
The invention belongs to the field of semiconductor integrated circuits, and particularly relates to a germanium-tin-like ternary alloy and a preparation method thereof.
Background
By adjusting Si1-x-yGexSnyThe value of x and y components of the ternary alloy can be changed to Si1-x-yGexSnyTernary alloys exhibit different semiconductor properties like silicon, like germanium, like silicon germanium, like germanium tin, etc. The germanium-like tin ternary alloy with high component x and y values has the advantages of high radiation recombination efficiency and high carrier mobility, can be applied to infrared light-emitting devices and high-speed electronic devices, and simultaneously has a single layerThe application potential of photoelectric integration is one of the hot spots and the key points of research and development in the field of integrated circuits.
When the germanium-tin-like ternary alloy is applied to devices and circuits, the problems of process compatibility and cost are considered, and the germanium-tin-like ternary alloy needs to be prepared on a silicon (Si) substrate. However, due to the high composition of the x and y alloys, the germanium-like tin ternary alloy Si1-x-yGexSnyThe lattice mismatch with the Si substrate is large, and the epitaxial preparation of the high-quality germanium-tin-like ternary alloy on the Si substrate is difficult. For example, the current Reduced Pressure Chemical Vapor Deposition (RPCVD) and Molecular Beam Epitaxy (MBE) processes can realize the germanium-tin-like ternary alloy on the Si substrate, but the processes require a complex buffer layer structure and a fine annealing process, even though only a small portion of the surface of the germanium-tin-like ternary alloy epitaxial layer is still available.
It is noted that the laser recrystallization technique, which has appeared in recent years, provides an effective technical approach for such large lattice mismatched epitaxy. Referring to fig. 1, fig. 1 is a schematic diagram of a laser recrystallization technique provided in the prior art. Irradiating germanium-like tin Si on preheated Si substrate by high-energy laser1-x-yGexSnyAnd melting and recrystallizing the epitaxial layer film surface quickly, and releasing the lattice mismatch dislocation of the epitaxial layer transversely so as to improve the crystal quality of the epitaxial layer.
Although the method for solving the problem of large lattice mismatch epitaxial quality by using the laser recrystallization technology is good, the method cannot be comprehensively applied to all large lattice mismatch epitaxial systems due to the small range of the applicable system. For example, for germanium-like tin Si on Si substrate1-x-yGexSnyEpitaxial layer system due to germanium-like tin Si1-x-yGexSnyThe melting point of the epitaxial layer is high, the system needs to be preheated to a high temperature before laser recrystallization, the laser power required by laser melting of the epitaxial layer is high, namely, high preheating cost and high investment of high-cost laser power equipment are required, and therefore, the high-quality germanium tin Si-like on the Si substrate by the technology is limited1-x-yGexSnyApplication to the preparation of epitaxial layers.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a germanium-tin-like ternary alloy and a preparation method thereof. The technical problem to be solved by the invention is realized by the following technical scheme:
the embodiment of the invention provides a preparation method of a germanium-tin-like ternary alloy, which comprises the following steps:
depositing a built-in heat source layer on a target substrate;
depositing a GeSn epitaxial layer on the built-in heat source layer;
depositing a protective layer on the GeSn epitaxial layer;
heating a sample formed by the target substrate, the built-in heat source layer, the GeSn epitaxial layer and the protective layer to a target temperature;
laser scanning is carried out on the built-in heat source layer and the GeSn epitaxial layer through the protective layer by utilizing a laser recrystallization technology, so that the built-in heat source layer is melted and diffused between the GeSn epitaxial layer and the protective layer;
and removing the protective layer and the built-in heat source layer to form the germanium-tin-like ternary alloy.
In one embodiment of the invention, the material of the target substrate comprises monocrystalline silicon.
In one embodiment of the invention, the melting point of the built-in heat source layer is lower than that of the GeSn epitaxial layer, and the density of the built-in heat source layer is lower than that of the GeSn epitaxial layer.
In one embodiment of the invention, the material of the built-in heat source layer comprises aluminum.
In one embodiment of the present invention, depositing a built-in heat source layer on a target substrate comprises:
the aluminum target material with the purity of 99.999 percent is processed by 2 multiplied by 10-1And sputtering and depositing the target substrate at a deposition rate of 2nm/min and a process pressure of Pa, wherein the deposition thickness is 100-120 nm, and the built-in heat source layer is formed.
In one embodiment of the present invention, depositing a GeSn epitaxial layer on the built-in heat source layer includes:
the germanium tin target material with the purity of 99.999 percent is processed by 1.3 multiplied by 10-1Pa, deposition rate of 4nm/min, and deposition thickness of 150-170 nm to form GeSn epitaxial layer
In one embodiment of the present invention, depositing a protective layer on the GeSn epitaxial layer includes:
depositing 130-160 mu m SiO on the GeSn epitaxial layer by using a chemical vapor deposition method2And forming the protective layer.
In one embodiment of the invention, the target temperature is 200 ℃ to 300 ℃.
In one embodiment of the present invention, the laser scanning conditions are: the laser wavelength is 808nm, and the laser power density is 2.0kW/cm2The laser spot size is 10mm multiplied by 1mm, and the laser moving speed is 20 mm/s.
Another embodiment of the present invention provides a germanium-tin-like ternary alloy, which is prepared by the preparation method as described in the above embodiment.
Compared with the prior art, the invention has the beneficial effects that:
according to the preparation method of the germanium-tin-like ternary alloy, the built-in heat source layer is deposited before the GeSn epitaxial layer is deposited, so that a high-quality germanium-tin-like ternary alloy epitaxial material can be obtained, the high heat energy cost and the high equipment investment cost of a laser recrystallization technology in the application of preparing the high-quality germanium-tin-like ternary alloy epitaxial layer are effectively reduced, and the application range of the laser recrystallization technology in solving the problem of large lattice mismatch epitaxial quality is expanded.
Drawings
FIG. 1 is a schematic diagram of a laser recrystallization technique provided in the prior art;
fig. 2 is a schematic flow chart of a method for preparing a germanium-tin-like ternary alloy according to an embodiment of the present invention;
fig. 3a to fig. 3e are schematic process diagrams of a method for preparing a germanium-tin-like ternary alloy according to an embodiment of the present invention;
fig. 4 is a schematic diagram of laser recrystallization according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 2 and fig. 3a to fig. 3e, fig. 2 is a schematic flow chart of a method for preparing a germanium-tin-like ternary alloy according to an embodiment of the present invention, and fig. 3a to fig. 3e are schematic process diagrams of the method for preparing a germanium-tin-like ternary alloy according to an embodiment of the present invention. The preparation method of the germanium-tin ternary alloy comprises the following steps:
s1, depositing a built-in heat source layer 002 on the target substrate 001, see fig. 3a and 3 b.
Specifically, the built-in heat source layer 002 may be deposited on the target substrate 001 using a magnetron sputtering method.
Specifically, target substrate 001 includes, but is not limited to, monocrystalline silicon. The material of the built-in heat source layer 002 is selected to satisfy the following conditions: low melting point, low density and high latent heat of fusion. The low melting point means that the melting point of the built-in heat source layer 002 is lower than that of the GeSn epitaxial layer 003, the low density means that the density of the built-in heat source layer 002 is lower than that of the GeSn epitaxial layer 003, and the high latent heat of fusion means that the material of the built-in heat source layer 002 needs to have higher latent heat of fusion. The material of the built-in heat source layer 002 includes, but is not limited to, metal, such as metallic aluminum, as long as the requirements of low melting point, low density and high latent heat of fusion are met.
In addition, the built-in heat source layer 002 also needs to satisfy the condition of low solid solubility in the target substrate.
S2, depositing GeSn epitaxial layer 003 on the internal heat source layer 002, see fig. 3 c.
Specifically, the GeSn epitaxial layer 003 may be deposited on the built-in heat source layer 002 by a magnetron sputtering method. Wherein the Ge composition is less than 0.2.
S3, depositing a protective layer 004 on the GeSn epitaxial layer 003, please refer to fig. 3 d.
Before the laser recrystallization treatment of the GeSn epitaxial layer 003 and the built-in heat source layer 002 in the atmospheric environment, a protective layer needs to be deposited on the GeSn epitaxial layer 003. Specifically, the protective layer 004 can be deposited on the GeSn epitaxial layer 003 by a Vapor Deposition method Chemical Vapor Deposition, CVD.
Specifically, the material of the protective layer includes, but is not limited to, silicon dioxide.
S4, the sample formed by target substrate 001, built-in heat source layer 002, GeSn epitaxial layer 003, and protective layer 004 is heated to a target temperature.
Specifically, the target temperature is 200 ℃ to 300 ℃. Further, the entire sample formed of the target substrate 001, the built-in heat source layer 002, the GeSn epitaxial layer 003, and the protective layer 004 was heated to 200 to 300 ℃.
S5, laser scanning is carried out on the built-in heat source layer 002 and the GeSn epitaxial layer 003 through the protective layer 004 by utilizing a laser recrystallization technology, so that the built-in heat source layer 002 is melted and diffused between the GeSn epitaxial layer 003 and the protective layer 004.
Referring to fig. 4, fig. 4 is a schematic diagram of laser recrystallization according to an embodiment of the present invention. Specifically, laser scanning is performed on the surface of the protective layer 004 by using a laser recrystallization technology, and laser passes through the protective layer 004 and acts on the GeSn epitaxial layer 003 and the built-in heat source layer 002, so that the built-in heat source layer 002 is melted. Further, since the built-in heat source layer 002 is disposed below the GeSn epitaxial layer 003 and the sample is heated, the power required for laser scanning is less than the laser power without the built-in heat source layer.
Specifically, because the melting point of the built-in heat source layer 002 is low, the sample is heated first, and then laser irradiation is assisted, so that the built-in heat source layer can be melted under the condition. The melted built-in heat source layer 002 can release high-energy phase change latent heat, can be used as a built-in heat source to cooperate with laser irradiation to provide heat treatment energy for the GeSn epitaxial layer from two directions, can effectively reduce the energy power required by the GeSn epitaxial layer in laser heat treatment melting, and can ensure that the GeSn epitaxial layer is longitudinally heated and uniformly distributed. Meanwhile, due to the low density of the internal heat source 002 and the low solid solubility in the target substrate element such as Si, after the whole laser recrystallization process is finished, the metal layer of the internal heat source layer can move to the top of the system, which only provides extra heat treatment energy and does not affect the epitaxial layer preparedAnd (4) quality. Furthermore, another advantage of introducing the built-in heat source layer in the laser recrystallization process is that the high-energy latent heat of phase change released by the built-in heat source layer can also soften the surface layer of the target substrate, which is beneficial to alloying the melted GeSn epitaxial layer with the GeSn epitaxial layer, thereby forming the germanium-like tin Si on the target substrate with good lattice matching with the substrate and less defects1-x-yGexSnyA ternary alloy epitaxial layer. And because part of the substrate is alloyed with the GeSn epitaxial layer, the prepared germanium-like tin Si1-x-yGexSnyThe thickness of the substrate in the ternary alloy epitaxial layer is smaller than that of the original target substrate.
Next, after laser scanning, the sample was allowed to cool naturally.
S6, removing the passivation layer 004 and the built-in heat source layer 002 to form the germanium-tin-like ternary alloy 005, please refer to fig. 3 e.
Specifically, the protective layer 004 is removed by etching and the built-in heat source layer 002 which is diffused and moved to the lower part of the protective layer 004 forms the high-quality germanium-like tin Si on the target substrate1-x-yGexSnyA ternary alloy 005.
In the preparation method of the germanium-tin-like ternary alloy of the embodiment, the built-in heat source layer is deposited before the GeSn epitaxial layer is deposited, so that a high-quality germanium-tin-like ternary alloy epitaxial material can be obtained, the high heat energy cost and the high equipment investment cost of the laser recrystallization technology in the application of preparing the high-quality germanium-tin-like ternary alloy epitaxial layer are effectively reduced, and the application range of the laser recrystallization technology in solving the problem of large lattice mismatch epitaxial quality is expanded.
Example two
Based on the first embodiment, with reference to fig. 2 and fig. 3a to 3e, the present embodiment further describes a method for preparing a germanium-tin-like ternary alloy by using a Si substrate as a target substrate 001 and using metal aluminum as a built-in heat source layer 002.
The preparation method of the germanium-tin ternary alloy comprises the following steps:
s1, a built-in heat source layer 002 is deposited on the target substrate 001.
First, the Si substrate was cleaned using the RCA method, and then cleaned with 10% hydrofluoric acid to remove the Si surface oxide layer.
Then, an aluminum target material with a purity of 99.999% was formed at 2X 10 by a magnetron sputtering method-1And sputtering and depositing the silicon substrate with the deposition thickness of 100-120 nm at the deposition rate of 2nm/min and the process pressure of Pa to form the built-in heat source layer 002.
S2, depositing GeSn epitaxial layer 003 on the internal heat source layer 002.
Specifically, a magnetron sputtering method is used to mix the germanium tin target material with the purity of 99.999% by 1.3 × 10-1And sputtering and depositing the internal heat source layer 002 at a deposition rate of 4nm/min under a process pressure of Pa, wherein the deposition thickness is 150-170 nm, and a GeSn epitaxial layer 003 is formed.
S3, depositing a protective layer 004 on the GeSn epitaxial layer 003.
Specifically, a CVD process is utilized to deposit SiO with the thickness of 130nm to 160nm on the GeSn film2Layer 004.
And S4, heating the sample formed by the target substrate 001, the built-in heat source layer 002, the GeSn epitaxial layer 003 and the protective layer to a target temperature.
Specifically, the entire sample material is heated to 200 ℃ to 300 ℃.
S5, laser scanning is carried out on the built-in heat source layer 002 and the GeSn epitaxial layer 003 through the protective layer 004 by utilizing a laser recrystallization technology, so that the built-in heat source layer 002 is melted and diffused between the GeSn epitaxial layer 003 and the protective layer 004.
Specifically, continuous laser scanning with SiO by laser recrystallization2The laser crystallization system material of the protective layer 004, wherein the laser wavelength is 808nm, and the laser power density is 2.0kW/cm2The laser spot size was 10mm × 1mm, the laser moving speed was 20mm/s, and then the material was naturally cooled.
And S6, removing the protective layer 004 and the built-in heat source layer 002 to form the germanium-tin-like ternary alloy 005.
Specifically, etching to remove SiO2Protective layer 004 and diffusion migration to SiO2The lower built-in heat source metal layer 002 forms high-quality germanium-like tin Si on the Si substrate1-x-yGexSnyTernary alloy 005, wherein x is less than 0.2.
In the preparation method of the germanium-tin-like ternary alloy of the embodiment, the built-in heat source layer is deposited before the GeSn epitaxial layer is deposited, so that a high-quality germanium-tin-like ternary alloy epitaxial material can be obtained, the high heat energy cost and the high equipment investment cost of the laser recrystallization technology in the application of preparing the high-quality germanium-tin-like ternary alloy epitaxial layer are effectively reduced, and the application range of the laser recrystallization technology in solving the problem of large lattice mismatch epitaxial quality is expanded.
EXAMPLE III
On the basis of the first embodiment, the present embodiment provides a germanium-tin-like ternary alloy, which is prepared by the preparation method of the first embodiment or the second embodiment, and includes a target substrate 001 and a germanium-tin-like Si located on the target substrate 0011-x-yGexSnyA ternary alloy 005.
Germanium tin Si of the present example1-x-yGexSnyThe lattice matching between the ternary alloy and the substrate is good, the defects are few, and the quality is high.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (10)

1. A preparation method of germanium-tin-like ternary alloy is characterized by comprising the following steps:
depositing a built-in heat source layer (002) on a target substrate (001);
depositing a GeSn epitaxial layer (003) on the built-in heat source layer (002);
depositing a protective layer (004) on the GeSn epitaxial layer (003);
heating a sample formed of the target substrate (001), the built-in heat source layer (002), the GeSn epitaxial layer (003), and the protective layer (004) to a target temperature;
performing laser scanning on the built-in heat source layer (002) and the GeSn epitaxial layer (003) through the protective layer (004) by utilizing a laser recrystallization technology, so that the built-in heat source layer (002) is melted and diffused between the GeSn epitaxial layer (003) and the protective layer (004);
and removing the protective layer (004) and the built-in heat source layer (002) to form the germanium-tin-like ternary alloy (005).
2. The method of claim 1, wherein the target substrate comprises single crystal silicon.
3. The method of claim 1, wherein the melting point of the built-in heat source layer (002) is lower than the melting point of the GeSn epitaxial layer (003), and the density of the built-in heat source layer (002) is lower than the density of the GeSn epitaxial layer (003).
4. The method of claim 1, wherein the material of the built-in heat source layer (002) comprises aluminum.
5. The method of claim 4, wherein depositing a built-in heat source layer (002) on a target substrate (001) comprises:
the aluminum target material with the purity of 99.999 percent is processed by 2 multiplied by 10-1And sputtering and depositing the target substrate (001) at a deposition rate of 2nm/min and a process pressure of Pa to deposit the target substrate (001) to a deposition thickness of 100-120 nm to form the built-in heat source layer (002).
6. The method of claim 1, wherein depositing a GeSn epitaxial layer (003) on the built-in heat source layer (002) comprises:
the germanium tin target material with the purity of 99.999 percent is processed by 1.3 multiplied by 10-1Sputtering and depositing the internal heat source layer (002) with the deposition thickness of 150-170 nm at the deposition rate of 4nm/min and the process pressure of PaThe GeSn epitaxial layer (003).
7. Method for the preparation of a germanium tin-like ternary alloy according to claim 1, characterized in that the deposition of a protective layer (004) on the GeSn epitaxial layer (003) comprises:
depositing 130-160 mu m SiO on the GeSn epitaxial layer (003) by using a chemical vapor deposition method2And forming the protective layer (004).
8. The method of claim 1, wherein the target temperature is 200 ℃ to 300 ℃.
9. The method for preparing the germanium-tin-like ternary alloy according to claim 1, wherein the laser scanning conditions are as follows: the laser wavelength is 808nm, and the laser power density is 2.0kW/cm2The laser spot size is 10mm multiplied by 1mm, and the laser moving speed is 20 mm/s.
10. A germanium-tin-like ternary alloy, characterized by being prepared by the preparation method of any one of claims 1 to 9.
CN202210095231.XA 2022-01-26 2022-01-26 Germanium-tin-like ternary alloy and preparation method thereof Pending CN114438454A (en)

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US20140057418A1 (en) * 2012-08-16 2014-02-27 Xiaolong Ma Method for manufacturing a semiconductor device
CN107895688A (en) * 2017-11-30 2018-04-10 西安科锐盛创新科技有限公司 The preparation method of compressive strain Ge materials
CN111367146A (en) * 2020-04-17 2020-07-03 苏州科技大学 Nano photoetching method of phase change-thermal decomposition type composite photoresist

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103594496A (en) * 2012-08-16 2014-02-19 中国科学院微电子研究所 Semiconductor device and making method thereof
US20140057418A1 (en) * 2012-08-16 2014-02-27 Xiaolong Ma Method for manufacturing a semiconductor device
CN107895688A (en) * 2017-11-30 2018-04-10 西安科锐盛创新科技有限公司 The preparation method of compressive strain Ge materials
CN111367146A (en) * 2020-04-17 2020-07-03 苏州科技大学 Nano photoetching method of phase change-thermal decomposition type composite photoresist

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Title
ZIHENG LIU ET AL.: "Laser-induced aluminium-assisted crystallization of Ge-rich SixGe1-x epitaxy on Si" *

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