CN114438441A - Plasma enhanced cleaning device and cleaning method - Google Patents
Plasma enhanced cleaning device and cleaning method Download PDFInfo
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- CN114438441A CN114438441A CN202111681333.1A CN202111681333A CN114438441A CN 114438441 A CN114438441 A CN 114438441A CN 202111681333 A CN202111681333 A CN 202111681333A CN 114438441 A CN114438441 A CN 114438441A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000003213 activating effect Effects 0.000 claims abstract description 3
- 230000009471 action Effects 0.000 claims description 9
- 230000005684 electric field Effects 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000009434 installation Methods 0.000 abstract description 3
- 210000002381 plasma Anatomy 0.000 description 113
- 150000002500 ions Chemical class 0.000 description 70
- 239000007789 gas Substances 0.000 description 47
- 150000001768 cations Chemical class 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000001035 drying Methods 0.000 description 6
- 238000004506 ultrasonic cleaning Methods 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
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- 230000005658 nuclear physics Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
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Abstract
The invention discloses a plasma enhanced cleaning device, which is used for cleaning a product to be treated and comprises a vacuum chamber, a plasma generator, an installation part and a pulse bias power supply, wherein the vacuum chamber is provided with an air inlet and an air outlet; the mounting part extends into the vacuum chamber to mount the plasma generator; the positive pole of the pulse bias power supply is electrically connected with the vacuum chamber to form an anode, and the negative pole of the pulse bias power supply is electrically connected with the plasma generator. The plasma enhanced cleaning device can form umbrella-shaped glow plasma, enhances up-and-down bombardment, improves the cleaning capability of products such as special-shaped jigs, large drills, PCB special knives, deep knife slot knives and the like, can carry out horizontal and longitudinal deep glow cleaning, and integrally improves the cleaning and activating effects of each surface of the products. The invention also provides a cleaning method.
Description
Technical Field
The invention relates to the technical field of plasma cleaning, in particular to a plasma enhanced cleaning device and a cleaning method.
Background
The ion source is a subject technology with wide application fields, and is an indispensable device in many basic research fields such as atomic physics, plasma chemistry, nuclear physics and the like. During the operation of the ion source, gas discharge, particle collision and surface ionization are realized under the interaction of an electromagnetic field, and a large amount of ions are generated and extracted into a beam for product cleaning or reaction enhancement.
In the field of vacuum coating, the ion source can greatly improve the bonding strength of the film and a substrate, and simultaneously, the hardness and the wear-resistant and corrosion-resistant properties of the film can be improved. Three common ion sources for vacuum coating machine coating are anode layer ion source, koffman ion source and Hall ion source, which are mainly used for on-line cleaning, improving the surface energy distribution of the coated product and modulating to increase the energy of reaction gas. Each of the above ion sources has advantages and disadvantages: the anode layer ion source is a large-area ion source, is particularly suitable for plating large workpieces, has larger ion current, but has more divergent ion current and too wide energy level distribution; the ion directionality generated by the Kaufman ion source is strong, the ion energy bandwidth is concentrated, and the ion source can be widely applied to vacuum coating and has the defects of cathode consumption and limited ion flow; the hall ion source is too strong due to the action of the axial magnetic field and the hall ion source ion beam needs supplementary electrons to neutralize the ion current.
For the field of vacuum coating, the forward energy of ion bombardment generated by a conventional ion source is enough, and for special-shaped jigs, deep-cutter cutters or other products, uneven etching can occur, dirt in deep grooves cannot be cleaned, and the performance of final products can be affected.
Therefore, it is desirable to provide a plasma enhanced cleaning apparatus and a cleaning method to solve the above-mentioned deficiencies of the prior art.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a plasma enhanced cleaning device and a cleaning method, which can deeply clean a product to be treated and improve the cleaning effect.
To achieve the above object, in one aspect, the present invention provides a plasma enhanced cleaning apparatus for cleaning a product to be treated, comprising:
a vacuum chamber having a gas inlet and a gas outlet;
the plasma generator comprises a body part which is a cavity, wherein the body part is provided with an upper part and a lower part, and the upper part and the lower part are oppositely arranged and are provided with a plurality of hollow parts;
the mounting part extends into the vacuum chamber to mount the plasma generator;
and the positive electrode of the pulse bias power supply is electrically connected with the vacuum chamber to form an anode, and the negative electrode of the pulse bias power supply is electrically connected with the plasma generator.
Compared with the prior art, when the plasma enhanced cleaning device is used, working gas enters the vacuum chamber through the gas inlet, the positive electrode of the pulse bias power supply is electrically connected with the vacuum chamber, the negative electrode of the pulse bias power supply is electrically connected with the plasma generator, and gas flowing between the plasma generator and the vacuum chamber is broken down under the action of the high-frequency high-voltage electric field to generate partial plasma; meanwhile, the body part is provided with the cavity, the upper part and the lower part are oppositely arranged and are respectively provided with the hollow parts, electrons oscillate back and forth in the cavity structure, the charge density is sharply increased and enters the negative bright area, so that the negative bright areas in the cavity are mutually overlapped, the concentration of charged particles in the cavity is higher, the radiation light is stronger, more high-energy particles are generated, a large amount of flowing gas is broken down and ionized to generate glow plasma, and under the action of the pulse bias voltage electric field, the glow plasma is ejected out from the cavity towards the hollow parts at two sides to form umbrella-shaped glow plasma, a product to be processed is cleaned, and the cleaning capability is effectively improved.
Preferably, the installation department includes step motor, the installation axle and the carousel system of being connected with step motor, and step motor is located the vacuum chamber outside, and the carousel system is fixed and is installed the axle and be located the vacuum chamber, and plasma generator fixes and install the axle and have certain distance between the carousel system, and the carousel system can drive plasma generator and rotate.
Preferably, the plasma enhanced cleaning device further comprises a jig arranged between the plasma generator and the turntable system, and the jig is used for positioning a product to be treated.
Preferably, the plasma enhanced cleaning device further comprises an ion source, the gas inlet comprises a first gas inlet and a second gas inlet, the first gas inlet is communicated with the ion source, and the ion source is used for generating plasma.
In another aspect, the present invention further provides a cleaning method using the plasma enhanced cleaning apparatus, including the steps of:
(1) positioning a product to be processed on the mounting part and in the vacuum chamber, and vacuumizing;
(2) and introducing working gas from the gas inlet, starting a pulse bias voltage power supply, and spraying glow plasma from the cavity to the hollow parts on two sides under the action of an electric field of pulse bias voltage to form the glow plasma to clean the product to be treated.
Preferably, the frequency of the pulse bias power supply is 30-100KHz, the voltage is 600-1500V, and the duty ratio is 30-80%.
Preferably, the mounting part comprises a turntable system, and the turntable system can drive the plasma generator to rotate;
and (3) driving the plasma generator to rotate through the turntable system between the step (1) and the step (2).
Preferably, the frequency of the ion source is 30-100KHz, the voltage is 300-.
Preferably, the cleaning method comprises the following steps:
(1) positioning a product to be processed on the mounting part and in the vacuum chamber, keeping the turntable system rotating at a constant speed, rotating at 0-5rpm, vacuumizing until the pressure is below 0.1 Pa;
(2) setting parameters of a pulse bias power supply: the pulse bias voltage is 600-1000V, the duty ratio is 30-80%, and the time is 10-30 min;
(3) adjusting parameters of the pulse bias power supply: the pulse bias voltage is 900-1200V, the duty ratio is 30-60%, and the time is 5-10 min;
(4) setting the parameters of the ion source: the current is 0-2A, the duty ratio is 30-80%, and the time is 5-20 min;
(5) setting the parameters of the ion source: the current is 2-4A, the duty ratio is 30-80%, and the time is 20-50 min;
(6) setting parameters of a pulse bias power supply: the pulse bias voltage is 900-1200V, the duty ratio is 60-80%, and the time is 30-120 min.
The invention has the following beneficial effects:
(1) the plasma generator is provided with a body part of the cavity, the upper part and the lower part of the plasma generator are oppositely arranged and are respectively provided with a plurality of hollow parts, the glow plasma is ejected out from the cavity to the hollow parts at two sides to form umbrella-shaped glow plasma, the up-and-down bombardment is enhanced, and the cleaning capability of products such as special-shaped jigs, large drills, PCB special knives, deep knife slot knives and the like is improved;
(2) the ion source is matched with the plasma generator, and a spatial three-dimensional plasma cloud can be generated, so that the cleaning effect is improved;
(3) the turntable system drives the plasma generator to rotate to form an umbrella-shaped plasma which is scanned up and down, left and right, similar to a brush brushing effect, so as to enhance etching, and under the action of a pulse bias power supply, an ion brush with different energies is formed, so that the plasma density, bombardment energy and cleaning range in the cavity of the body part are improved, the whole product to be processed is subjected to transverse and longitudinal deep glow cleaning, and the cleaning and activating effects of all surfaces of the product are integrally improved.
Drawings
FIG. 1 is a schematic structural diagram of a plasma enhanced cleaning apparatus according to the present invention.
Fig. 2 is a schematic structural view of a plasma generator in the plasma enhanced cleaning apparatus shown in fig. 1.
FIG. 3 is a schematic view of the plasma generator shown in FIG. 2 at another angle.
FIG. 4 is a schematic structural diagram of another embodiment of the plasma generator shown in FIG. 2.
Description of the symbols
The plasma enhanced cleaning device 100, the vacuum chamber 10, the gas outlet 11, the gas inlet 13, the first gas inlet 131, the second gas inlet 133, the glow plasma 21, the plasma 22, the plasma generator 30, the body portion 31, the upper portion 311, the lower portion 313, the hollow portion 315, the mounting portion 33, the stepping motor 331, the mounting shaft 333, the turntable system 335, the pulse bias power source 35, the jig 50, the product to be processed 60, and the ion source 70.
Detailed Description
The following examples are intended to illustrate the present invention, but not to limit the scope of the claims of the present invention.
Referring to fig. 1, a plasma enhanced cleaning apparatus 100 for cleaning a product 60 to be processed comprises a vacuum chamber 10, a plasma generator 30, a mounting portion 33 and a pulse bias power source 35, wherein the vacuum chamber 10 has an inlet 13 and an outlet 11; the plasma generator 30 includes a body 31 (refer to fig. 2-3) having a cavity, the body 31 has an upper portion 311 and a lower portion 313, the upper portion 311 and the lower portion 313 are disposed opposite to each other and each has a plurality of hollow portions 315; the mounting portion 33 extends into the vacuum chamber 10 for mounting the plasma generator 30; the positive electrode of the pulse bias power supply 35 is electrically connected to the vacuum chamber 10 to form an anode, and the negative electrode of the pulse bias power supply 35 is electrically connected to the plasma generator 30. The product 60 to be processed may be, but not limited to, a special-shaped jig, a porous product, and a long deep knife.
When the plasma enhanced cleaning device 100 is used, working gas enters the vacuum chamber 10 through the gas inlet 13, the positive electrode of the pulse bias power supply 35 is electrically connected with the vacuum chamber 10, the negative electrode of the pulse bias power supply 35 is electrically connected with the plasma generator 30, and gas flowing between the plasma generator 30 and the vacuum chamber 10 is broken down under the action of a high-frequency high-voltage electric field to generate partial plasma; meanwhile, the main body 31 has a cavity, and the upper portion 311 and the lower portion 313 are oppositely arranged and are respectively provided with the hollow portion 315, electrons oscillate back and forth in the cavity structure of the main body 31, the charge density is sharply increased and enters the negative bright area, so that the negative bright areas in the cavity are mutually overlapped, the concentration of charged particles in the cavity of the main body 31 is higher, the radiation light is stronger, more high-energy particles are obtained, a large amount of flowing gas is broken and ionized, and glow plasma 21 is generated, and under the action of the electric field of the pulse bias voltage, the glow plasma 21 is ejected from the cavity of the main body 31 to the hollow portions 315 at two sides of the upper portion 311 and the lower portion 313 to form umbrella-shaped glow plasma 21, so as to clean the product 60 to be processed, and the cleaning capability is effectively improved. Wherein the working gas may be, but is not limited to, argon.
In a preferred embodiment, with continued reference to fig. 1, the mounting portion 33 includes a stepping motor 331, a mounting shaft 333 connected to the stepping motor 331, and a turntable system 335, the stepping motor 331 is located outside the vacuum chamber 10, the turntable system 335 is fixed to the mounting shaft 333 and located inside the vacuum chamber 10, the plasma generator 30 is fixed to the mounting shaft 333 and spaced from the turntable system 335, and the turntable system 335 can drive the plasma generator 30 to rotate via the mounting shaft 333. The product 60 to be processed is located on the mounting shaft 333, and the turntable system 335 drives the product 60 to be processed to rotate synchronously by means of the mounting shaft 333. When the turntable system 335 drives the plasma generator 30 to rotate, the hollow parts 315 of the upper part 311 and the lower part 313 sequentially generate strong plasma glow, the pulse bias power supply 35 is switched on and off, after rotation, glow starting and glow extinguishing are realized between the adjacent hollow parts 315, after one circle is completed, the glow starting and the glow extinguishing are repeated, the plasma forms plasmas with different positions and different energies in the 'starting-extinguishing' period, under the attraction of high negative bias, positively charged particles act on the product 60 to be processed, a brush-like 'ion brush' with different forces is formed, and the product 60 to be processed is deeply cleaned. Further, a fixture 50 is disposed between the plasma generator 30 and the turntable system 335, and the fixture 50 is used for positioning the product 60 to be processed. That is, the products 60 to be processed are mounted in the positioning holes of the jig 50, so that the cleaning of the products 60 to be processed can be realized, and the working efficiency and quality are improved.
In a preferred embodiment, referring to fig. 2-3, the shape of the body 31 is not limited, such as a cylinder, a cube or a cuboid. Preferably, the body 31 is a hollow cylinder with a diameter of 100-500mm and a height of 5-200mm, but is not limited thereto. The shape of the hollow 315 may be, but not limited to, a triangle, a circular hole (please refer to fig. 4), a sector, or a polygon. The number and size of the hollow-out portions 315 can be limited according to actual needs, for example, the number of the hollow-out portions 315 is 4-8, and the size thereof is 10-60mm, but not limited thereto.
In a preferred embodiment, with continued reference to fig. 1, the plasma enhanced cleaning apparatus 100 further includes an ion source 70, the gas inlet 13 includes a first gas inlet 131 and a second gas inlet 133, the first gas inlet 131 is in communication with the ion source 70, the working gas enters the ion source 70 through the first gas inlet 131, and the ion source 70 generates the plasma 22. The ion source 70 functions as an ionizer and is capable of generating plasma, effectively replenishing the plasma within the vacuum chamber 10. After the ion source gas enters the ion source 70 through the first gas inlet 131, a large amount of plasma 22 is generated under the action of the ion source 70, so that the up-and-down scanning of the plasma is realized, and the cleaning effect is improved. The ion source 70 of the present invention may be, but is not limited to, one or more of an anode layer ion source, a kaufman ion source, and a hall ion source, among others. For example, with 1 cation-sheath ion source, the reference current is 0.5-4A, and as the current of the ion source 70 increases, the glow brightness increases throughout the vacuum chamber 10 and the glow generated by the plasma generator 30 increases.
The invention also provides a cleaning method adopting the plasma enhanced cleaning device, which comprises the following steps:
(1) carrying out ultrasonic cleaning and drying on a product to be treated;
(2) and positioning the product to be processed at the mounting part, and positioning the product to be processed in the vacuum chamber, and vacuumizing until the pressure is below 0.1 Pa. Specifically, the product to be processed is placed on a jig, the jig is arranged on the mounting shaft and is positioned between the plasma generator and the turntable system, and the turntable system can drive the jig to synchronously rotate at the rotating speed of 0-5 rpm.
(3) Introducing 100-fold 500sccm working gas, controlling the exhaust amount of the exhaust opening, adjusting the gas pressure to 5.0-30.0Pa, the frequency of the pulse bias power supply to 30-100KHz, the voltage to 600-fold 1500V, and the duty ratio to 30-80%.
(4) Providing an ion source for generating plasma, starting the ion source to generate plasma in the vacuum chamber after the step (3), wherein the ion source can be, but is not limited to, an anode layer ion source, a Koffman ion source and a Hall ion source, the frequency of the ion source is 30-100KHz, the voltage is 300-2000V, and the duty ratio is 30-80%.
In a preferred embodiment, the cleaning method using the plasma enhanced cleaning apparatus comprises the steps of:
(1) carrying out ultrasonic cleaning and drying on a product to be treated;
(2) positioning the product to be processed at the mounting part, driving the product to be processed to synchronously rotate by the turntable system at the rotating speed of 0-5rpm, vacuumizing, and vacuumizing to below 0.1 Pa.
(3) Introducing 100-500sccm Ar gas, controlling the exhaust amount of the extraction opening, adjusting the gas pressure to 5.0-30.0Pa, the voltage of the pulse bias power supply to 600-1000V, and the duty ratio to 30-80%, namely applying a gradient pulse bias of 600-1000V to the turntable system and the anode to start the plasma generator and generate an umbrella-shaped arc-shaped glow plasma with fixed-frequency flicker in the cavity of the body part for 10-30 min.
(4) Reducing the Ar gas flow to 0-300sccm, ensuring the vacuum pressure of the vacuum chamber to be 0.05-1.0Pa, applying gradient pulse bias voltage of 900-1200V to the turntable system and the anode, wherein the duty ratio is 30-60%, and the time is 5-10min, so that stable umbrella-shaped arc glow plasma is generated in the cavity of the body part;
(5) in order to increase the plasma intensity of the vacuum chamber and enhance the bombardment effect of the transverse plasma, starting the ion source of the cation layer, setting the current of the ion source to be 0-2A, the duty ratio to be 30-80% and the time to be 5-20min, so that the plasma generated by the ion source is stably coupled with the plasma generated by the plasma generator;
(6) setting the current of the ion source to be 2-4A, the duty ratio to be 30-80% and the time to be 20-50min so as to remove impurities such as gas adsorbed on the surface of a product to be treated;
(7) and (3) applying 900-1200V gradient pulse bias voltage to the turntable system and the anode, wherein the duty ratio is 60-80%, and the time is 30-120min, so that the glow density and brightness are enhanced, impurities such as an oxide layer on the surface of a product to be treated are deeply removed, and the nanoscale defects and activity are improved.
The invention will be further developed by the following specific examples, which should not be construed as limiting the invention thereto.
Example 1
The cleaning method adopting the plasma enhanced cleaning device comprises the following steps:
(1) selecting a long deep cutter groove cutter product as a product to be treated, and carrying out ultrasonic cleaning and drying on the long deep cutter groove cutter product;
(2) putting a product to be processed into a jig and placing the jig into a vacuum chamber, driving the product to be processed to synchronously rotate by a turntable system, keeping the product to be processed to rotate at a constant speed, rotating at 1.2rpm, vacuumizing at room temperature, and vacuumizing to below 0.02 Pa;
(3) introducing Ar gas of 300sccm, controlling the exhaust amount of an exhaust opening, adjusting the gas pressure to 10.0Pa, applying pulse bias voltage of 800V to the turntable system and the anode, and applying a duty ratio of 80% to start the plasma generator and generate umbrella-shaped arc glow plasma with fixed frequency flickering in the cavity of the body part, wherein slight glow corona appears on the surface of the jig for 10 min;
(4) reducing the flow rate of Ar to 200sccm, enabling the vacuum pressure of the vacuum chamber to be 0.5Pa, applying 900V pulse bias voltage to the turntable system and the anode, enabling the duty ratio to be 75%, and enabling the time to be 10min, so that stable umbrella-shaped arc glow plasma is generated in the cavity of the body part;
(5) starting the cation layer ion source, setting the current of the cation layer ion source to be 1A, the duty ratio to be 70 percent and the time to be 20min, so that the plasma generated by the ion source is stably coupled with the plasma generated by the plasma generator;
(6) setting the current of the cation layer ion source to be 3A, the duty ratio to be 75% and the time to be 30min so as to remove impurities such as gas adsorbed on the surface of a product to be treated;
(7) 1000V pulse voltage is applied to the turntable system and the anode, the duty ratio is 70%, the glow density and brightness are enhanced, the time is 50min, impurities such as an oxide layer on the surface of a product to be processed are deeply removed, and the nanoscale defects and activity are improved.
According to the scheme, the etching efficiency can reach 0.5um/H, the deep groove cleaning is effectively realized, and the bonding strength of the coating and the substrate is enhanced.
Example 2
The cleaning method adopting the plasma enhanced cleaning device comprises the following steps:
(1) selecting a special-shaped jig for a product to be treated, and carrying out ultrasonic cleaning and drying on the special-shaped jig product;
(2) putting a product to be processed into a jig and placing the jig into a vacuum chamber, driving the product to be processed to synchronously rotate by a turntable system, keeping the product to be processed to rotate at a constant speed, rotating at 1rpm, vacuumizing at room temperature to be below 0.02 Pa;
(3) introducing Ar gas of 500sccm, controlling the exhaust amount of an exhaust opening, adjusting the gas pressure to 28.0Pa, applying pulse bias voltage of 800V to the turntable system and the anode, and applying a duty ratio of 70% to start the plasma generator and generate umbrella-shaped arc glow plasma with fixed frequency flickering in the cavity of the body part, wherein slight glow corona appears on the surface of the jig for 15 min;
(4) reducing the flow rate of Ar to 200sccm, enabling the vacuum pressure of the vacuum chamber to be 0.5Pa, applying 900V pulse bias voltage to the turntable system and the anode, enabling the duty ratio to be 60%, and enabling the time to be 5min, so that stable umbrella-shaped arc glow plasma to be generated in the cavity of the body part;
(5) starting the cation layer ion source, setting the current of the cation layer ion source to be 1A, the duty ratio to be 70 percent and the time to be 20min, so that the plasma generated by the ion source is stably coupled with the plasma generated by the plasma generator;
(6) setting the current of the cation layer ion source to be 4A, the duty ratio to be 75% and the time to be 20min so as to remove impurities such as gas adsorbed on the surface of a product to be treated;
(7) and applying 1000V pulse voltage to the turntable system and the anode with a duty ratio of 75%, enhancing the glow density and brightness for 50min, deeply removing impurities such as an oxide layer on the surface of a product to be treated, and improving the nanoscale defects and activity.
According to the scheme, the etching efficiency can reach 0.7 um/H.
Example 3
The cleaning method adopting the plasma enhanced cleaning device comprises the following steps:
(1) selecting a porous product as a product to be treated, and carrying out ultrasonic cleaning and drying on the porous product;
(2) putting a product to be processed into a jig and placing the jig into a vacuum chamber, driving the product to be processed to synchronously rotate by a turntable system, keeping the product to be processed to rotate at a constant speed, rotating at 2rpm, vacuumizing at room temperature, and vacuumizing to below 0.008 Pa;
(3) introducing Ar gas of 180sccm, controlling the exhaust amount of an exhaust opening, adjusting the gas pressure to 0.2Pa, applying 600V pulse bias voltage to the turntable system and the anode with a duty ratio of 60%, starting the plasma generator, generating umbrella-shaped arc glow plasma with fixed frequency flickering in the cavity of the body part, and allowing slight glow corona to emerge on the surface of the jig for 10 min;
(4) reducing the flow rate of Ar to 100sccm, enabling the vacuum pressure of the vacuum chamber to be 0.1Pa, applying 900V pulse bias voltage to the turntable system and the anode, enabling the duty ratio to be 60%, and enabling the time to be 10min, so that stable umbrella-shaped arc glow plasma is generated in the cavity of the body part;
(5) starting the cation layer ion source, setting the current of the cation layer ion source to be 1A, the duty ratio to be 70 percent and the time to be 10min, so that the plasma generated by the ion source is stably coupled with the plasma generated by the plasma generator;
(6) setting the current of the cation layer ion source to be 4A, the duty ratio to be 80 percent and the time to be 40min so as to remove impurities such as gas adsorbed on the surface of a product to be treated;
(7) 1000V pulse voltage is applied to the turntable system and the anode, the duty ratio is 80%, the glow density and brightness are enhanced, the time is 90min, impurities such as an oxide layer on the surface of a product to be treated are deeply removed, and the defects and the activity of the nanometer scale are improved.
According to the scheme, the etching efficiency can reach 0.6um/H, strong glow cleaning is formed on the porous product, meanwhile, the porous product forms a cavity structure under the scheme, self-glow mapping is generated, the plasma penetrates into the surface and the holes of the porous product, the cleaning and the activity of the plasma are increased, and a good foundation is laid for constructing good coating performance.
Example 4
The cleaning method adopting the plasma enhanced cleaning device comprises the following steps:
(1) selecting a porous product as a product to be treated, and carrying out ultrasonic cleaning and drying on the porous product;
(2) loading a product to be processed into a jig, placing the jig into a vacuum chamber, driving the product to be processed to synchronously rotate by a turntable system, keeping the product to be processed to rotate at a constant speed, rotating at 2rpm, vacuumizing at room temperature, and vacuumizing to below 0.008 Pa;
(3) introducing Ar gas of 180sccm, controlling the exhaust amount of an exhaust opening, adjusting the gas pressure to 0.2Pa, applying 600V pulse bias voltage to the turntable system and the anode with a duty ratio of 60%, starting the plasma generator, generating umbrella-shaped arc glow plasma with fixed frequency flickering in the cavity of the body part, and allowing slight glow corona to emerge on the surface of the jig for 10 min;
(4) reducing the flow rate of Ar to 100sccm, enabling the vacuum pressure of the vacuum chamber to be 0.1Pa, applying 900V pulse bias voltage to the turntable system and the anode, enabling the duty ratio to be 60%, and enabling the time to be 10min, so that stable umbrella-shaped arc glow plasma is generated in the cavity of the body part;
(5) and applying 1000V pulse voltage to the turntable system and the anode with a duty ratio of 80%, enhancing the glow density and brightness for 90min, deeply removing impurities such as an oxide layer on the surface of a product to be treated, and improving the nanoscale defects and activity.
According to the scheme, the etching efficiency can reach 0.3um/H, which shows that the particle capability of emitting plasma in the cavity is weakened and the space etching capability is weakened without the assistance of an ion source.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A plasma enhanced cleaning device for cleaning a product to be treated, comprising:
a vacuum chamber having a gas inlet and a gas outlet;
the plasma generator comprises a body part which is a cavity, wherein the body part is provided with an upper part and a lower part, and the upper part and the lower part are oppositely arranged and are provided with a plurality of hollow parts;
the mounting part extends into the vacuum chamber to mount the plasma generator;
and the positive electrode of the pulse bias power supply is electrically connected with the vacuum chamber to form an anode, and the negative electrode of the pulse bias power supply is electrically connected with the plasma generator.
2. The plasma enhanced cleaning device as recited in claim 1, wherein the mounting portion includes a step motor, a mounting shaft connected to the step motor, and a turntable system, the step motor is located outside the vacuum chamber, the turntable system is fixed to the mounting shaft and located inside the vacuum chamber, the plasma generator is fixed to the mounting shaft and spaced from the turntable system, and the turntable system can drive the plasma generator to rotate.
3. The plasma enhanced cleaning device of claim 2 further comprising a fixture mounted between said plasma generator and said turntable system, said fixture for positioning a product to be treated.
4. The plasma enhanced cleaning device of claim 1, further comprising an ion source, the gas inlet comprising a first gas inlet and a second gas inlet, the first gas inlet in communication with the ion source, the ion source for generating a plasma.
5. A cleaning method using the plasma enhanced cleaning apparatus as claimed in claim 1, comprising the steps of:
(1) positioning a product to be processed on the mounting part and in the vacuum chamber, and vacuumizing;
(2) and introducing working gas from the gas inlet, starting a pulse bias voltage power supply, and spraying out from the cavity of the body part to the hollow parts on the two sides of the upper part and the lower part under the action of an electric field of pulse bias voltage to form glow plasma so as to clean the product to be treated.
6. The method as claimed in claim 5, wherein the frequency of the pulse bias power supply is 30-100KHz, the voltage is 600-1500V, and the duty ratio is 30-80%.
7. The cleaning method of claim 5, comprising the steps of:
the mounting part comprises a turntable system which can drive the plasma generator to rotate;
the method also comprises the following steps between the step (1) and the step (2): and driving the plasma generator to rotate through the turntable system.
8. The cleaning method according to claim 7, comprising the steps of:
providing an ion source for generating a plasma, activating the ion source to generate plasma into the vacuum chamber after step (2).
9. The method as claimed in claim 8, wherein the frequency of the ion source is 30-100KHz, the voltage is 300-2000V, and the duty ratio is 30-80%.
10. The cleaning method of claim 8, comprising the steps of:
(1) positioning a product to be processed on the mounting part and in the vacuum chamber, keeping the turntable system rotating at a constant speed, rotating at 0-5rpm, vacuumizing until the pressure is below 0.1 Pa;
(2) setting parameters of a pulse bias power supply: the pulse bias voltage is 600-1000V, the duty ratio is 30-80%, and the time is 10-30 min;
(3) adjusting parameters of the pulse bias power supply: the pulse bias voltage is 900-1200V, the duty ratio is 30-60%, and the time is 5-10 min;
(4) setting the parameters of the ion source: the current is 0-2A, the duty ratio is 30-80%, and the time is 5-20 min;
(5) setting the parameters of the ion source: the current is 2-4A, the duty ratio is 30-80%, and the time is 20-50 min;
(6) setting parameters of a pulse bias power supply: the pulse bias voltage is 900-1200V, the duty ratio is 60-80%, and the time is 30-120 min.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN202558926U (en) * | 2012-05-30 | 2012-11-28 | 合肥永信等离子技术有限公司 | Equipment capable of realizing high-speed deposited diamond-like film on surface of three-dimensional workpiece |
| CN107109618A (en) * | 2015-06-29 | 2017-08-29 | 株式会社爱发科 | Substrate board treatment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN202558926U (en) * | 2012-05-30 | 2012-11-28 | 合肥永信等离子技术有限公司 | Equipment capable of realizing high-speed deposited diamond-like film on surface of three-dimensional workpiece |
| CN107109618A (en) * | 2015-06-29 | 2017-08-29 | 株式会社爱发科 | Substrate board treatment |
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