CN114415947A - Dummy read control method, device and medium - Google Patents
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Abstract
The application discloses a Dummy read control method, a device and a medium, and relates to the technical field of hard disks. According to the method for controlling the Dummy read, the working environment of the Nand Flash memory is detected every other first preset time, and the Dummy read operation is executed on the Nand Flash memory every other corresponding preset time interval according to the working environment of the Nand Flash memory. Compared with the current method of performing Dummy read at fixed time intervals, the Nand Flash memory can detect working environments and adopt different preset time intervals according to different working environments, so that the problems that the influence of the first reading effect cannot be accurately eliminated due to too large selected time intervals and the redundant operation is caused due to too small selected time intervals are avoided, and the storage efficiency of the Nand Flash memory is improved.
Description
Technical Field
The present application relates to the field of hard disk technologies, and in particular, to a Dummy read control method, apparatus, and medium.
Background
In recent years, with the rise of computer information technology, the hard disk technology related to information storage becomes a popular technical field, Nand Flash among a plurality of hard disks is a storage medium which is widely applied at present, the Nand Flash is composed of a plurality of transistor circuits and is finally packaged as a unit to form a Flash memory particle chip.
In the current technical scheme, in order to avoid the influence of the first reading effect, a Dummy Read operation is usually performed on each Block which stores valid data at a fixed time interval, that is, a Read command is only sent to the corresponding Block, and data in Flash is not actually Read, which is called a Read refresh operation. Because the first reading effect is influenced by the working temperature and the wear frequency (PE cycles) of a Flash memory (Nand Flash), the Dummy read operation is executed at fixed time intervals, the time interval is large, the influence of the first reading effect cannot be accurately eliminated, and a large amount of redundant operation is introduced when the time interval is small, so that the access efficiency of a user to the Nand Flash memory is reduced.
In view of the above technology, finding a Dummy read control method for Nand Flash memory with reasonable time interval is a problem to be solved by those skilled in the art.
Disclosure of Invention
The application aims to provide a Dummy read control method, so as to solve the problems that currently, because a fixed time interval is used for executing Dummy read operation, the time interval is large, the influence of a first reading effect cannot be accurately eliminated, and when the time interval is small, a large amount of redundant operation is introduced, so that the access efficiency of a user to a Nand Flash memory is reduced.
In order to solve the technical problem, a Dummy read control method is applied to a Nand Flash memory, and comprises the following steps:
detecting the working environment of the Nand Flash memory every other first preset time;
determining a preset time interval corresponding to the working environment according to the working environment of the Nand Flash memory; the working environment and the corresponding preset time interval are obtained through testing, the testing process comprises the steps of setting the working environment of the Nand Flash memory, the working environment comprises the abrasion stage and the working environment temperature of the Nand Flash memory, at least two Nand Flash memories are used for testing, one Nand Flash memory corresponds to one testing time interval so as to test according to the corresponding testing time interval, the data of each Nand Flash memory when the testing is finished are read, the number of bits with errors in the data is obtained, and the preset time interval of the Nand Flash memory is obtained through calculation according to the number of the bits with errors in the reading;
and executing a Dummy read operation on the Nand Flash memory according to the determined preset time interval.
Preferably, in the test process, the reading the data of each Nand Flash memory and acquiring the number of bits with errors in reading of the data includes:
reading data in each Nand Flash memory, and recording the reading error digit of each Nand Flash memory;
when the reading of the data in each Nand Flash memory is finished, reading the data in each Nand Flash memory again, and recording the reading error digit of each Nand Flash memory;
calculating the preset time interval of the Nand Flash memory according to the read error digit, wherein the preset time interval comprises the following steps:
and counting the digit of the data reading errors in each Nand Flash memory in the two times of reading, and performing a statistical test according to the digit of the data reading errors in the two times and the difference between the digits of the data reading errors in the two times to obtain the preset time interval of the Nand Flash memory.
Preferably, the method further comprises:
dividing the obtained working environment with the same preset time interval into a working interval;
the detecting the working environment of the Nand Flash memory every other first preset time comprises the following steps:
detecting the working interval of the Nand Flash memory every other first preset time;
the determining the preset time interval corresponding to the working environment according to the working environment of the Nand Flash memory comprises the following steps:
and determining a preset time interval corresponding to the working environment according to the working interval of the Nand Flash memory.
Preferably, the method further comprises:
and when the working interval of the Nand Flash memory changes, giving an alarm so that a user can change the corresponding preset time interval according to the current working interval.
Preferably, the executing the Dummy read operation on the Nand Flash memory at every corresponding preset time interval includes:
and asynchronously executing the Dummy read operation on the Nand Flash memory at intervals of corresponding preset time intervals.
Preferably, the method further comprises:
recording all the Dummy read operations, and generating and storing data.
Preferably, the working environment temperature of the Nand Flash memory is 0-70 ℃, and the abrasion stage of the Nand Flash memory is 0-10000 times.
In order to solve the above problem, the present application further provides a Dummy read control device, including:
the detection module is used for detecting the working environment of the Nand Flash memory every other first preset time;
the determining module is used for determining a preset time interval corresponding to the working environment according to the working environment of the Nand Flash memory; the working environment and the corresponding preset time interval are obtained through testing, the testing process comprises the steps of setting the working environment of the Nand Flash memory, the working environment comprises the abrasion stage and the working environment temperature of the Nand Flash memory, at least two Nand Flash memories are used for testing, one Nand Flash memory corresponds to one testing time interval so as to test according to the corresponding testing time interval, the data of each Nand Flash memory when the testing is finished are read, the number of bits with errors in the data is obtained, and the preset time interval of the Nand Flash memory is obtained through calculation according to the number of the bits with errors in the reading;
and the execution module is used for executing Dummy read operation on the Nand Flash memory according to the determined preset time interval.
Preferably, the apparatus further comprises:
and the dividing module is used for dividing the obtained working environment with the same preset time interval into a working interval.
Preferably, the apparatus further comprises:
and the alarm module is used for sending an alarm when the working interval of the Nand Flash memory changes so as to facilitate a user to change the corresponding preset time interval according to the current working interval.
Preferably, the apparatus further comprises:
and the recording module is used for recording all the Dummy read operations, generating data and storing the data.
In order to solve the above problem, the present application further provides a Dummy read control apparatus, including a memory for storing a computer program;
a processor for implementing the steps of the time interval testing method as described above when executing the computer program.
To solve the above problem, the present application further provides a computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, implements the steps of the time interval testing method as described above.
The Dummy read control method provided by the application is applied to a Nand Flash memory, obtains preset time intervals of the Nand Flash memory in different working environments through a test process, detects the working environment of the Nand Flash memory at intervals of first preset time, and executes Dummy read operation on the Nand Flash memory at intervals of corresponding preset time intervals according to the working environment of the Nand Flash memory. Compared with the current method of performing Dummy read on the Nand Flash memory by adopting a fixed time interval, based on the method, the Nand Flash memory can effectively cope with the influence caused by the first reading effect by detecting the working environment and adopting different preset time intervals according to different working environments, the problems that the influence of the first reading effect cannot be accurately eliminated due to too large selected time intervals and too many redundant operations are caused due to too small selected time intervals are avoided, and the storage efficiency of the Nand Flash memory is improved.
The Dummy read control device and the computer readable storage medium correspond to the Dummy read control method, and the beneficial effects are the same as the above
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In order to more clearly illustrate the embodiments of the present application, the drawings needed for the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings can be obtained by those skilled in the art without inventive effort.
Fig. 1 is a flowchart of a Dummy read control method according to an embodiment of the present application;
fig. 2 is a schematic diagram of a Dummy read control apparatus according to an embodiment of the present application;
fig. 3 is a structural diagram of a Dummy read control device according to another embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without any creative effort belong to the protection scope of the present application.
The core of the application is to provide a Dummy read control method, so as to solve the problems that at present, because a fixed time interval is used for executing Dummy read operation, the time interval is large, the influence of a first reading effect cannot be accurately eliminated, and when the time interval is small, a large amount of redundant operation is introduced, and the access efficiency of a user to a Nand Flash memory is reduced.
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings.
Fig. 1 is a flowchart of a Dummy read control method provided in an embodiment of the present application, which is applied to a Nand Flash memory, and as shown in fig. 1, the method includes:
s10: detecting the working environment of the Nand Flash memory every other first preset time;
the Nand flash memory is one of flash memories, and a nonlinear macro-unit mode is adopted in the Nand flash memory, so that a cheap and effective solution is provided for realizing a solid-state large-capacity memory. The Nand-Flash memory has the advantages of large capacity, high rewriting speed and the like, is suitable for storing a large amount of data, and is widely applied in the industry. When data are stored, data of at least one Wordline are written once by taking the Wordline as a unit; when data is read, the data of one or more pages in a certain word is read at one time by taking the pages as units.
In this embodiment, the setting and specific time of the first preset time are not limited, and depend on the specific situation of the Nand Flash memory, for example, when the working environment changes rapidly, the set first preset time is short, and when the working environment is relatively stable, the set first preset time is long.
S11: determining a preset time interval corresponding to the working environment according to the working environment of the Nand Flash memory;
it should be noted that the preset time interval mentioned in the present embodiment is substantially different from the first preset time, and is not confused.
The testing process comprises the steps of setting the working environment of a Nand Flash memory, wherein the working environment comprises the abrasion stage and the working environment temperature of the Nand Flash memory, at least two Nand Flash memories are used for testing, one Nand Flash memory corresponds to one testing time interval so as to facilitate the testing according to the corresponding testing time interval, the data of each Nand Flash memory at the end of the testing are read, the error digit in the data is obtained, and the preset time interval of the Nand Flash memory is obtained through calculation according to the error digit.
In a specific test process, for the test accuracy, the more Nand Flash memories used in the test are, the higher the accuracy is, but considering that the more Nand Flash memories used are, the higher the cost is, therefore, in this embodiment, the number of Nand Flash memories used in the test is not limited, and it is easy to understand that the test time interval is the time interval for performing Dummy read on the Nand Flash memories used in the test. In this embodiment, the reading mode for reading the data of the Nand Flash memory at the end of the test is not limited, and may be single-time reading or multiple-time reading, and may be read by using a host or other devices. In practical application, in the preset time interval of the Nand Flash memory obtained by calculation according to the read error digit, the specific calculation mode in this embodiment is not limited, and the read error digit with the least number in different time intervals is generally compared, that is, the preset time interval.
S12: and executing Dummy read operation on the Nand Flash memory according to the determined preset time interval.
It should be noted that the Dummy Read operation is to send a Read command only to the corresponding Block, and does not actually Read data in Flash.
The method for controlling the Dummy read is applied to a Nand Flash memory, detects the working environment of the Nand Flash memory by obtaining the preset time intervals of the Nand Flash memory obtained through the test process under different working environments and every other first preset time, and executes the Dummy read operation on the Nand Flash memory according to the working environment of the Nand Flash memory and every other corresponding preset time interval. Compared with the current method of performing Dummy read on the Nand Flash memory by adopting a fixed time interval, based on the method, the Nand Flash memory can effectively cope with the influence caused by the first reading effect by detecting the working environment and adopting different preset time intervals according to different working environments, the problems that the influence of the first reading effect cannot be accurately eliminated due to too large selected time intervals and too many redundant operations are caused due to too small selected time intervals are avoided, and the storage efficiency of the Nand Flash memory is improved.
In the above embodiment, the data of the Nand Flash memory in the test process and how to calculate the preset time interval are not limited, and a preferred scheme is proposed herein, wherein in the test process, reading the data of each Nand Flash memory and acquiring the number of bits of reading errors in the data includes:
reading data in each Nand Flash memory, and recording the reading error digit of each Nand Flash memory;
when the reading of the data in each Nand Flash memory is finished, reading the data in each Nand Flash memory again, and recording the reading error digit of each Nand Flash memory;
the method for calculating the preset time interval of the Nand Flash memory according to the read error digit comprises the following steps:
and counting the digit of the data reading error in each Nand Flash memory in the two times of reading, and carrying out a statistical test according to the digit of the data reading error in the two times of reading and the difference between the digits of the data reading error in the two times of reading to obtain the preset time interval of the Nand Flash memory.
It should be noted that, because the first reading effect is only for the first reading of the Nand Flash memory, and therefore, the error of the data bit caused by daily wear and interference is considered, a data reading mode of twice is adopted, the first read data is the data of the Nand Flash memory under the influence of the first reading effect, the later read data is the data of the Nand Flash memory in a normal working state, because the first reading effect is generated again by the Nand Flash memory after a certain time interval is considered, the second reading is immediately carried out when the first data reading is finished, the second obtained data is ensured to be the normally read data which is not influenced by the first reading effect, the number of the reading error bits in the two data is counted according to the two data obtained by testing, the preset time interval is obtained according to the difference between the number of the reading error bits of the two times and the number of the reading error bits of the two times, according to specific situations, the weight of setting the first reading error digit is generally larger, and the calculation of the preset time interval is carried out mainly by the first reading error digit.
In consideration of a series of errors caused by the working environment, the working state, the interference and the like of the memory, the method of reading twice is adopted in the embodiment, and the data error under the interference of the first reading effect and the data error under normal reading are combined, so that the inaccuracy of the first reading effect detection caused by other factors is reduced, and the accuracy of the preset time interval obtained by testing is increased.
In view of the efficiency of operating the process, a preferred solution is proposed herein, the process further comprising:
dividing the obtained working environment with the same preset time interval into a working interval;
every other first preset time, detecting the working environment of the Nand Flash memory comprises the following steps:
detecting a working interval of a Nand Flash memory every other first preset time;
determining a preset time interval corresponding to the working environment according to the working environment of the Nand Flash memory comprises the following steps:
and determining a preset time interval corresponding to the working environment according to the working interval of the Nand Flash memory.
It can be understood that the working interval is a set of working environments, for example, when it is detected that the temperature of the working environment is 0 to 10 degrees, the preset time intervals of all Nand Flash memories in the range of the wear phase 0 to 100 are the same, then the temperature of the working environment is 0 to 10 degrees, and the range of the wear phase 0 to 100 is a working interval.
In this embodiment, the working environments with the same preset time interval are set to be the same working interval by establishing the working interval, so that the frequency of detecting the working environments and the frequency of switching the preset time interval can be reduced, the burden of operating the system is reduced, and the operating efficiency of the system is increased.
Considering that the operation of changing the working environment needs a user, a preferable scheme is provided, and the method further comprises the following steps:
and when the working interval of the Nand Flash memory changes, an alarm is given out so that a user can change the corresponding preset time interval according to the current working interval.
It should be noted that, in this embodiment, a specific manner of the alarm is not limited, and the user is prompted to change the corresponding preset time interval by issuing the alarm, so as to prevent an error in reading the Nand Flash memory caused by the fact that the preset time interval is not changed due to the change of the working interval, and increase the data storage security of the Nand Flash memory.
In the above embodiment, how to execute the Dummy read operation is not limited, and a preferable scheme is proposed herein, where executing the Dummy read operation on the Nand Flash memory at every corresponding preset time interval includes:
and asynchronously executing Dummy read operation on the Nand Flash memory at intervals of corresponding preset time intervals.
That is, in the embodiment, by asynchronously executing the Dummy read operation, other operations of the user in the system where the Nand Flash memory is located are not affected, and the experience of the user is improved.
In view of the recordability of the data, a preferred solution is proposed herein, the method further comprising:
all the Dummy read operations are recorded, and data are generated and stored.
It should be noted that, in the embodiment, data generated by the Dummy read operation is stored, and the number of bits after the error is integrated, and the data can be fed back to the test process, so that the preset time interval can be obtained more accurately.
In consideration of the actual working environment of the Nand Flash memory, the preferable scheme is provided, the working environment temperature of the Nand Flash memory is 0-70 ℃, and the abrasion stage of the Nand Flash memory is 0-10000 times.
In the embodiment, the actual working environment passing through the Nand Flash memory is limited, so that the test range is reduced, and the test cost and the test time are saved.
In the above embodiments, detailed description is given on the Dummy read control method, and the present application also provides embodiments corresponding to the Dummy read control device. It should be noted that the present application describes the embodiments of the apparatus portion from two perspectives, one from the perspective of the function module and the other from the perspective of the hardware.
Fig. 2 is a schematic diagram of a Dummy read control device according to an embodiment of the present application, where the device includes:
the detection module 10 is used for detecting the working environment of the Nand Flash memory every other first preset time;
the determining module 11 is used for determining a preset time interval corresponding to a working environment according to the working environment of the Nand Flash memory; the testing process comprises the steps of setting the working environment of a Nand Flash memory, wherein the working environment comprises the abrasion stage and the working environment temperature of the Nand Flash memory, at least two Nand Flash memories are used for testing, one Nand Flash memory corresponds to one testing time interval so as to facilitate the testing according to the corresponding testing time interval, the data of each Nand Flash memory at the end of the testing are read, the error digit in the data is obtained, and the preset time interval of the Nand Flash memory is obtained by calculating according to the error digit;
and the execution module 12 is used for executing the Dummy read operation on the Nand Flash memory according to the determined time interval.
Preferably, the apparatus further comprises:
and the dividing module is used for dividing the obtained working environment with the same preset time interval into a working interval.
Preferably, the apparatus further comprises:
and the alarm module is used for sending an alarm when the working interval of the Nand Flash memory changes so as to facilitate a user to change the corresponding preset time interval according to the current working interval.
Preferably, the apparatus further comprises:
and the recording module is used for recording all the Dummy read operations, generating data and storing the data.
Since the embodiments of the apparatus portion and the method portion correspond to each other, please refer to the description of the embodiments of the method portion for the embodiments of the apparatus portion, which is not repeated here.
The Dummy read control device comprises a detection module 10, a determination module 11 and an execution module 12, detects the working environment of a Nand Flash memory by acquiring the preset time intervals of the Nand Flash memory obtained through the test process under different working environments and every other first preset time, and executes Dummy read operation on the Nand Flash memory according to the working environment of the Nand Flash memory and every other corresponding preset time intervals. Compared with the current method of performing Dummy read on the Nand Flash memory by adopting a fixed time interval, based on the method, the Nand Flash memory can effectively cope with the influence caused by the first reading effect by detecting the working environment and adopting different preset time intervals according to different working environments, the problems that the influence of the first reading effect cannot be accurately eliminated due to too large selected time intervals and too many redundant operations are caused due to too small selected time intervals are avoided, and the storage efficiency of the Nand Flash memory is improved.
Fig. 3 is a structural diagram of a Dummy read control device according to another embodiment of the present application, and as shown in fig. 3, the Dummy read control device includes: a memory 20 for storing a computer program;
a processor 21, configured to implement the steps of the Dummy read control method as mentioned in the above embodiments when executing the computer program.
The Dummy read control device provided in this embodiment may include, but is not limited to, a smart phone, a tablet computer, a notebook computer, or a desktop computer.
The processor 21 may include one or more processing cores, such as a 4-core processor, an 8-core processor, and the like. The processor 21 may be implemented in at least one hardware form of a DSP (Digital Signal Processing), an FPGA (Field-Programmable Gate Array), and a PLA (Programmable Logic Array). The processor 21 may also include a main processor and a coprocessor, where the main processor is a processor for Processing data in an awake state, and is also called a Central Processing Unit (CPU); a coprocessor is a low power processor for processing data in a standby state. In some embodiments, the processor 21 may be integrated with a GPU (Graphics Processing Unit), which is responsible for rendering and drawing the content required to be displayed on the display screen. In some embodiments, the processor 21 may further include an AI (Artificial Intelligence) processor for processing a calculation operation related to machine learning.
The memory 20 may include one or more computer-readable storage media, which may be non-transitory. Memory 20 may also include high speed random access memory, as well as non-volatile memory, such as one or more magnetic disk storage devices, flash memory storage devices. In this embodiment, the Nand Flash memory 20 is at least used for storing the following computer program 201, wherein after being loaded and executed by the processor 21, the computer program can implement the relevant steps of the Dummy read control method disclosed in any one of the foregoing embodiments. In addition, the resources stored in the memory 20 may also include an operating system 202, data 203, and the like, and the storage manner may be a transient storage manner or a permanent storage manner. Operating system 202 may include, among others, Windows, Unix, Linux, and the like. Data 203 may include, but is not limited to, data involved in the Dummy read control method, and the like.
In some embodiments, the Dummy read control device may further include a display 22, an input/output interface 23, a communication interface 24, a power supply 25, and a communication bus 26.
Those skilled in the art will appreciate that the configuration shown in FIG. 3 is not intended to be limiting of the Dummy read control device and may include more or fewer components than those shown.
The Dummy read control device provided by the embodiment of the application comprises a memory and a processor, and when the processor executes a program stored in the memory, the following method can be realized: the Dummy read control method mentioned in the above embodiment.
Since the embodiments of the apparatus part and the method part correspond to each other, the embodiments of the apparatus part are described with reference to the embodiments of the method part, which is not repeated herein, and the beneficial effects of the embodiments of the apparatus part and the method part are also described with reference to the method part
Finally, the application also provides a corresponding embodiment of the computer readable storage medium. The computer-readable storage medium has stored thereon a computer program which, when being executed by a processor, carries out the steps as set forth in the above-mentioned method embodiments.
It is to be understood that if the method in the above embodiments is implemented in the form of software functional units and sold or used as a stand-alone product, it can be stored in a computer readable storage medium. Based on such understanding, the technical solutions of the present application may be embodied in the form of a software product, which is stored in a storage medium and executes all or part of the steps of the methods described in the embodiments of the present application, or all or part of the technical solutions. And the aforementioned storage medium includes: various media capable of storing program codes, such as a usb disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.
Since the embodiments of the storage medium portion and the embodiments of the method portion correspond to each other, please refer to the description of the embodiments of the method portion for the embodiments of the storage medium portion, which is not repeated herein, and the advantageous effects of the embodiments of the storage medium portion and the embodiments of the method portion are also found in the method portion.
The Dummy read control method, device and medium provided by the present application are described in detail above. The embodiments are described in a progressive manner in the specification, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
It is further noted that, in the present specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Claims (10)
1. A Dummy read control method is characterized in that the method is applied to a Nand Flash memory and comprises the following steps:
detecting the working environment of the Nand Flash memory every other first preset time;
determining a preset time interval corresponding to the working environment according to the working environment of the Nand Flash memory; the working environment and the corresponding preset time interval are obtained through testing, the testing process comprises the steps of setting the working environment of the Nand Flash memory, the working environment comprises the abrasion stage and the working environment temperature of the Nand Flash memory, at least two Nand Flash memories are used for testing, one Nand Flash memory corresponds to one testing time interval so as to test according to the corresponding testing time interval, the data of each Nand Flash memory when the testing is finished are read, the number of bits with errors in the data is obtained, and the preset time interval of the Nand Flash memory is obtained through calculation according to the number of the bits with errors in the reading;
and executing a Dummy read operation on the Nand Flash memory according to the determined preset time interval.
2. The Dummy read control method according to claim 1, wherein, in the test process, the reading the data of each Nand Flash memory and acquiring the number of bits in the data with read errors includes:
reading data in each Nand Flash memory, and recording the reading error digit of each Nand Flash memory;
reading the data in the Nand Flash memories again within a second preset time after the data in the Nand Flash memories are read, and recording the number of wrong reading digits of the Nand Flash memories;
calculating the preset time interval of the Nand Flash memory according to the read error digit, wherein the preset time interval comprises the following steps:
and counting the digit of the data reading errors in each Nand Flash memory in the two times of reading, and performing a statistical test according to the digit of the data reading errors in the two times and the difference between the digits of the data reading errors in the two times to obtain the preset time interval of the Nand Flash memory.
3. The Dummy read control method according to claim 2, wherein the method further comprises:
dividing the obtained working environment with the same preset time interval into a working interval;
the detecting the working environment of the Nand Flash memory every other first preset time comprises the following steps:
detecting the working interval of the Nand Flash memory every other first preset time;
the determining the preset time interval corresponding to the working environment according to the working environment of the Nand Flash memory comprises the following steps:
and determining a preset time interval corresponding to the working environment according to the working interval of the Nand Flash memory.
4. The Dummy read control method according to claim 3, wherein the method further comprises:
and when the working interval of the Nand Flash memory changes, giving an alarm so that a user can change the corresponding preset time interval according to the current working interval.
5. The Dummy read control method of claim 4, wherein the performing the Dummy read operation on the Nand Flash memory at every corresponding preset time interval comprises:
and asynchronously executing the Dummy read operation on the Nand Flash memory at intervals of corresponding preset time intervals.
6. The Dummy read control method of Nand Flash memory according to claim 5, wherein the method further comprises:
recording all the Dummy read operations, and generating and storing data.
7. The Dummy read control method of Nand Flash memory according to any of claims 1 to 6, wherein the operating environment temperature of the Nand Flash memory is 0 to 70 degrees, and the wear stage of the Nand Flash memory is 0 to 10000 times.
8. A Dummy read control apparatus, comprising:
the detection module is used for detecting the working environment of the Nand Flash memory every other first preset time;
the determining module is used for determining a preset time interval corresponding to the working environment according to the working environment of the Nand Flash memory; the working environment and the corresponding preset time interval are obtained through testing, the testing process comprises the steps of setting the working environment of the Nand Flash memory, the working environment comprises the abrasion stage and the working environment temperature of the Nand Flash memory, at least two Nand Flash memories are used for testing, one Nand Flash memory corresponds to one testing time interval so as to test according to the corresponding testing time interval, the data of each Nand Flash memory when the testing is finished are read, the number of bits with errors in the data is obtained, and the preset time interval of the Nand Flash memory is obtained through calculation according to the number of the bits with errors in the reading;
and the execution module is used for executing Dummy read operation on the Nand Flash memory according to the determined preset time interval.
9. A Dummy read control apparatus comprising a memory for storing a computer program;
a processor for implementing the steps of the time interval testing method according to any one of claims 1 to 7 when executing the computer program.
10. A computer-readable storage medium, characterized in that a computer program is stored on the computer-readable storage medium, which computer program, when being executed by a processor, carries out the steps of the time interval testing method according to any one of claims 1 to 7.
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