CN114415471B - Siloxane-based two-photon photoresist and preparation method, use method and application thereof - Google Patents
Siloxane-based two-photon photoresist and preparation method, use method and application thereof Download PDFInfo
- Publication number
- CN114415471B CN114415471B CN202210188866.4A CN202210188866A CN114415471B CN 114415471 B CN114415471 B CN 114415471B CN 202210188866 A CN202210188866 A CN 202210188866A CN 114415471 B CN114415471 B CN 114415471B
- Authority
- CN
- China
- Prior art keywords
- siloxane
- photon
- photoresist
- meth
- acrylate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
Abstract
The invention discloses a siloxane-based two-photon photoresist as well as a preparation method, a use method and application thereof, wherein the siloxane-based two-photon photoresist comprises the following components in percentage by mass: 30-99.9wt% of siloxane compound, 0-69.9wt% of active cross-linking agent and 0.1-5wt% of two-photon initiator; the preparation method comprises the following steps: uniformly mixing a siloxane compound and an active cross-linking agent in a yellow light chamber according to a proportion, continuously adding a two-photon initiator according to a proportion, and uniformly mixing on a roller mixer to obtain the siloxane-based two-photon photoresist. According to the invention, a siloxane material is introduced into the two-photon photoresist to form an organic-inorganic hybrid system, so that the characteristics of weather resistance, high and low temperature resistance, corrosion resistance, electric insulation and the like of the photoresist are improved, the two-photon maskless 3D printing method does not contain any solvent, a three-dimensional micro-nano device in any shape is prepared, and organic matters are removed through high-temperature annealing to obtain a silicon dioxide pattern or device.
Description
Technical Field
The invention relates to the technical field of laser micro-nano processing, in particular to a siloxane-based two-photon photoresist and a preparation method, a use method and application thereof.
Background
The high energy pulses of femtosecond laser enable the interaction between light and matter to be distinct from that of continuous laser, and is characterized by nonlinear absorption of the femtosecond laser by the material being affected, i.e., two-photon or multi-photon absorption. The femtosecond laser nano printing is that high-energy pulses of the femtosecond laser are directly acted on materials, and mask plate-free processing of three-dimensional, deep nanoscale resolution and any structural design is realized.
The siloxane-containing two-photon photoresist has the characteristics of weather resistance, high and low temperature resistance, corrosion resistance, electric insulation and the like, can be used for preparing micro-nano devices in any shapes by combining the maskless 3D printing characteristic of two-photon polymerization, removes organic matters through high-temperature annealing to obtain silicon dioxide patterns or devices, and has important application in the aspects of optical communication systems, optical interconnection networks, microwave photon signal processing systems and the like.
The application publication number is CN101974119A, the invention discloses a nano-silicon deep ultraviolet positive photoresist and a film-forming resin thereof, and silsesquioxane containing a single reactive group is introduced to improve the heat resistance of the photoresist and improve the etching resistance of the photoresist. The invention discloses a Chinese patent with application publication number CN113189844A, and relates to a cage-shaped polysilsesquioxane-based negative photoresist and a preparation method thereof. However, the photoresist needs to be dissolved by means of a solvent in the preparation process, and a planar adhesive film is formed by spin coating in the use process, so that a three-dimensional micro-nano device cannot be prepared.
Accordingly, we provide a siloxane-based two-photon photoresist, a method of making, a method of using and a use thereof to solve the above technical problems.
Disclosure of Invention
The invention aims to provide a siloxane-based two-photon photoresist as well as a preparation method, a use method and application thereof, solves the technical problem which is solved by the exclusive rights in the prior art, and realizes the technical effect.
The technical scheme adopted by the invention is as follows:
a siloxane-based two-photon photoresist comprises the following components in percentage by mass: 30-99.9wt% of siloxane compound, 0-69.9wt% of active cross-linking agent and 0.1-5wt% of two-photon initiator.
Further, the siloxane compound is at least one compound of polymethylsiloxane resin with a terminal group disubstituted by a (meth) acrylate group or silsesquioxane with an octa (meth) acrylate group.
Further, the polymethylsiloxane resin whose terminal group is disubstituted with a (meth) acrylate group is at least one compound corresponding to the chemical general formula (I):
wherein n = natural number of 2-20, R 1 Selected from one of the following groups:
、
、
、
、
or
。
Further, the octa (meth) acrylate-based substituted silsesquioxane is at least one compound corresponding to the general chemical formula (II):
in the formula, R 2 Selected from one of the following groups:
、
。
further, the active cross-linking agent is composed of any one or more than two of the following compounds: bisphenol a di (meth) acrylate, ethoxylated bisphenol a di (meth) acrylate, polyethylene glycol (200) di (meth) acrylate, polyethylene glycol (400) di (meth) acrylate, polyethylene glycol (600) di (meth) acrylate, trimethylolpropane triacrylate, ethoxylated trimethylolpropane triacrylate, pentaerythritol tetraacrylate, dipentaerythritol pentaacrylate, or dipentaerythritol hexaacrylate.
Further, the two-photon initiator C is composed of any one or more than two of the following compounds: 2-isopropylthioxanthone, 7-diethylamino-3-thenoylcoumarin, 3- (2-benzimidazolyl) -7- (diethylamino) coumarin, 7-diethylamino-3- (1-methyl-2-benzimidazolyl) coumarin, 3- (2 '-benzothiazolyl) -7-diethylaminocoumarin or 3,3' -carbonylbis (7-diethylaminocoumarin).
The invention also provides a preparation method of the siloxane-based two-photon photoresist, which comprises the following steps: uniformly mixing a siloxane compound and an active cross-linking agent in a yellow light chamber according to a proportion, continuously adding a two-photon initiator according to a proportion, and uniformly mixing on a roller mixer to obtain the siloxane-based two-photon photoresist.
The invention also provides a using method of the siloxane-based two-photon photoresist, which comprises the following steps:
s1: dripping 1-2ml of siloxane-based two-photon photoresist on a spin-coating substrate;
s2: exposing the two-photon photoresist of siloxane by using a femtosecond laser direct writing device;
s3: immersing the exposed two-photon photoresist of siloxane into a developing solution for developing to obtain a photoetching pattern;
s4: and (4) putting the developed photoetching pattern into a high-temperature oven, heating, and removing organic matters to obtain a pattern consisting of silicon dioxide.
Furthermore, the wavelength of the femtosecond laser direct writing in the S2 is 700-900nm, the laser pulse is 60-150fs, and the laser repetition frequency is 10-200 MHz.
Further, the developing solution in S3 is any one or two or more of the following compounds: acetone, 1-ethoxy-2-propanol, ethanol, isopropanol, propylene glycol methyl ether acetate or xylene, developing for 6-30min at room temperature.
Further, the temperature rise in the step S4 is 500-1000 o C, keeping the temperature for 0.5-5 h.
The invention also provides application of the application method of the siloxane-based two-photon photoresist in optical waveguides.
The invention has the beneficial effects that:
1. according to the invention, a siloxane material is introduced into the two-photon photoresist to form an organic-inorganic hybrid system, so that the characteristics of weather resistance, high and low temperature resistance, corrosion resistance, electric insulation and the like of the photoresist are improved;
2. the two-photon photoresist does not contain any solvent, can be used for two-photon maskless 3D printing, can be used for preparing three-dimensional micro-nano devices in any shapes, and can be used for removing organic matters through high-temperature annealing to obtain silicon dioxide patterns or devices.
Drawings
FIG. 1 is an electron micrograph of a photoresist exposed and developed by a femtosecond laser according to example 4;
FIG. 2 is an electron micrograph of the developed photoresist pattern after high temperature annealing in example 4;
FIG. 3 is an electron micrograph of a photoresist of example 5 after femtosecond laser exposure and development;
FIG. 4 is an electron micrograph of the developed photoresist pattern after high temperature annealing in example 5;
FIG. 5 is an electron micrograph of a photoresist of example 6 after femtosecond laser exposure and development;
FIG. 6 is an electron micrograph of the developed photoresist pattern after high temperature annealing in example 6.
Detailed Description
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
In a yellow light chamber, 3g of propyl diacrylate polymethylsiloxane (n = 2)
And 6.99g of dipentaerythritol hexaacrylate, then 0.01g of 2-isopropyl thioxanthone is added, and the mixture is placed on a roller mixer to be mixed uniformly, so that the siloxane-based two-photon photoresist is obtained.
Dripping 2ml of siloxane-based two-photon photoresist on a spin-on substrate; exposing the two-photon photoresist of siloxane by using a femtosecond laser direct writing device with the wavelength of 780nm, the laser power of 20mw, the laser pulse of 140fs and the laser repetition frequency of 200 MHz;
soaking the exposed two-photon photoresist of siloxane in propylene glycol methyl ether acetate developing solution for 6min for development, then transferring the photoresist into isopropanol for soaking for 1min, standing and drying to obtain a photoetching pattern;
placing the developed photoetching pattern into a high-temperature oven, and heating to 1000 DEG o And C, preserving the heat for 0.5h, and removing organic matters to obtain a pattern consisting of silicon dioxide.
Example 2
In the yellow room, 5g of propyl dimethacrylate polymethylsiloxane (n = 10)
And 4.8g of pentaerythritol tetraacrylate, then 0.2g of 7-diethylamino-3-thiophene formyl coumarin is added, and the mixture is placed on a roller mixer to be mixed uniformly, so that the siloxane-based two-photon photoresist is obtained.
Dripping 2ml of siloxane-based two-photon photoresist on a spin-on substrate; exposing the two-photon photoresist of siloxane by using a femtosecond laser direct writing device with the wavelength of 800nm, the laser power of 10mw, the laser pulse of 80fs and the laser repetition frequency of 180 MHz;
soaking the exposed siloxane two-photon photoresist in an acetone developing solution for 5min for development, then transferring the siloxane two-photon photoresist into isopropanol for soaking for 1min, standing and drying to obtain a photoetching pattern;
placing the developed photoetching pattern into a high-temperature oven, and heating to 700 DEG C o And C, preserving the heat for 2 hours, and removing organic matters to obtain a pattern consisting of silicon dioxide.
Example 3
In a yellow light room, 8g of dipentaerythritol tripropyl methacrylate polymethylsiloxane (n = 20)
And 1.5g of dipentaerythritol pentaacrylate, then 0.5g of 3- (2-benzimidazolyl) -7- (diethylamino) coumarin is added, and the mixture is placed on a roller mixer to be mixed uniformly, so that the siloxane-based two-photon photoresist is obtained.
Dripping 2ml of siloxane-based two-photon photoresist on a spin-on substrate; exposing the two-photon photoresist of siloxane by using a femtosecond laser direct writing device with the wavelength of 850nm, the laser power of 5mw, the laser pulse of 60fs and the laser repetition frequency of 150 MHz;
soaking the exposed siloxane two-photon photoresist in a dimethylbenzene developing solution for 12min for development, then transferring the siloxane two-photon photoresist into ethanol for soaking for 2min, standing and drying to obtain a photoetching pattern;
placing the developed photoetching pattern into a high-temperature oven, and heating to 600 DEG C o And C, preserving the heat for 3 hours, and removing organic matters to obtain a pattern consisting of silicon dioxide.
Example 4
In a yellow light chamber, 6g of dipentaerythritol trimethylpropyltrimethacrylate methicone (n = 15)
2g of bisphenol A diacrylate and 1.6g of pentaerythritol triacrylate are mixed uniformly, then 0.4g of 7-diethylamino-3- (1-methyl-2-benzimidazolyl) coumarin is added, and the mixture is placed on a roller mixer to be mixed uniformly, so that the siloxane-based two-photon photoresist is obtained.
Dripping 2ml of siloxane-based two-photon photoresist on a spin-on substrate; exposing the two-photon photoresist of siloxane by using a femtosecond laser direct writing device with the wavelength of 700nm, the laser power of 15mw, the laser pulse of 100fs and the laser repetition frequency of 10 MHz;
soaking the exposed siloxane two-photon photoresist in a 2-ethoxypropanol developing solution for 15min for development, then transferring the siloxane two-photon photoresist into ethanol for soaking for 2min, standing and drying to obtain a photoetching pattern; and performing electron microscope scanning on the photoetching pattern of the photoresist after femtosecond laser exposure and development to obtain an electron microscope image of the Fresnel lens 3D pattern shown in the figure 1.
Placing the developed photoetching pattern into a high-temperature oven, and heating to 750 DEG C o And C, preserving the heat for 1.5h, and removing organic matters to obtain a pattern consisting of silicon dioxide. And performing electron microscope scanning on the pattern obtained after the developed photoresist pattern is subjected to high-temperature annealing to obtain an electron microscope image as shown in fig. 2, wherein the Fresnel lens pattern is smooth in surface and excellent in fidelity after the high-temperature annealing, and the situation that the 3D pattern is damaged due to damage, collapse and the like does not occur.
Example 5
In a yellow light chamber, 4g of di (dipentaerythritol penta-propyl acrylate) methicone (n = 10)
4g of octamethacrylate substituted silsesquioxane and 1.8g of polyethylene glycol (600) diacrylate are uniformly mixed, then 0.2g of two-photon initiator 3,3' -carbonyl bis (7-diethylaminocoumarin) is added, and the mixture is placed on a roller mixer to be uniformly mixed, so that the siloxane-based two-photon photoresist is obtained.
Dripping 2ml of siloxane-based two-photon photoresist on a spin-on substrate; exposing the two-photon photoresist of siloxane by using a femtosecond laser direct writing device with the wavelength of 750nm, the laser power of 10mw, the laser pulse of 120fs and the laser repetition frequency of 80 MHz;
soaking the exposed two-photon photoresist of siloxane in propylene glycol methyl ether acetate developing solution for 50min for development, then transferring the photoresist into ethanol for soaking for 2min, standing and drying to obtain a photoetching pattern; and performing electron microscope scanning on the photoetching pattern of the photoresist after femtosecond laser exposure and development to obtain a cubic pattern electron microscope image as shown in figure 3.
Placing the developed photoetching pattern into a high-temperature oven, and heating to 650 DEG C o And C, preserving the heat for 1h, and removing organic matters to obtain a pattern consisting of silicon dioxide. And (3) performing electron microscope scanning on the pattern obtained after the developed photoresist pattern is annealed at high temperature to obtain an electron microscope image as shown in figure 4, wherein the surface of the cubic pattern is smooth and has no obvious defects.
Example 6
In a yellow light room, 9.99g of octaacrylate substituted silsesquioxane is added with 0.01g of two-photon initiator 7-diethylamino-3-thenoyl coumarin, and the mixture is placed on a roller mixer to be uniformly mixed, so that the siloxane-based two-photon photoresist is obtained.
Dripping 2ml of siloxane-based two-photon photoresist on a spin-on substrate; exposing the two-photon photoresist of siloxane by using a femtosecond laser direct writing device with the wavelength of 900nm, the laser power of 20mw, the laser pulse of 150fs and the laser repetition frequency of 100 MHz;
soaking the exposed two-photon photoresist of siloxane in propylene glycol methyl ether acetate developing solution for 30min for development, then transferring the photoresist into ethanol for soaking for 2min, standing and drying to obtain a photoetching pattern; and carrying out electron microscope scanning on the photoetching pattern of the photoresist after femtosecond laser exposure and development to obtain a 3D pattern electron microscope image of the photonic chip lead as shown in figure 5.
Placing the developed photoetching pattern into a high-temperature oven, and heating to 500 DEG C o And C, preserving the heat for 5 hours, and removing organic matters to obtain a pattern consisting of silicon dioxide. And performing electron microscope scanning on a pattern obtained by high-temperature annealing on the developed photoresist pattern to obtain an electron microscope image as shown in fig. 6, wherein the suspended part of the 3D pattern of the lead of the photonic chip is not collapsed, and the tail fine line still keeps excellent linearity, so that the pattern can be used for the photonic chip.
Example 7
In a yellow light chamber, 3g of octaacrylate-substituted silsesquioxane, 3g of bis (dipentaerythritol penta-propyl methacrylate) polymethylsiliconSiloxane (n =12)
1g of ethoxylated bisphenol A dimethacrylate, 1g of polyethylene glycol (200) diacrylate and 1.8g of trimethylolpropane triacrylate are mixed uniformly, then 0.2g of 3- (2' -benzothiazolyl) -7-diethylamino coumarin is added, and the mixture is placed on a roller mixer to be mixed uniformly, so that the siloxane-based two-photon photoresist is obtained.
Dripping 2ml of siloxane-based two-photon photoresist on a spin-on substrate; exposing the two-photon photoresist of siloxane by using a femtosecond laser direct writing device with the wavelength of 780nm, the laser power of 10mw, the laser pulse of 100fs and the laser repetition frequency of 100 MHz;
soaking the exposed siloxane two-photon photoresist in a 1-ethoxy-2-propanol developing solution for 8min for development, then transferring the siloxane two-photon photoresist into ethanol for soaking for 2min, standing and drying to obtain a photoetching pattern;
putting the developed photoetching pattern into a high-temperature oven, and heating to 800 DEG o And C, preserving the heat for 2 hours, and removing organic matters to obtain a pattern consisting of silicon dioxide.
Example 8
In a yellow light room, 6g of octaacrylate substituted silsesquioxane, 1g of bisphenol A dimethacrylate, 1g of polyethylene glycol (400) dimethacrylate and 1.7g of ethoxylated trimethylolpropane triacrylate are uniformly mixed, then 0.3g of a two-photon initiator 7-diethylamino-3-thiophene formyl coumarin is added, and the mixture is placed on a roller mixer to be uniformly mixed, so that the siloxane-based two-photon photoresist is obtained.
Dripping 2ml of siloxane-based two-photon photoresist on a spin-on substrate; exposing the two-photon photoresist of siloxane by using a femtosecond laser direct writing device with the wavelength of 780nm, the laser power of 10mw, the laser pulse of 100fs and the laser repetition frequency of 100 MHz;
soaking the exposed two-photon photoresist of siloxane in propylene glycol methyl ether acetate developing solution for 8min for development, then transferring the photoresist into isopropanol for soaking for 2min, standing and drying to obtain a photoetching pattern;
putting the developed photoetching pattern into a high-temperature oven, and heating to 800 DEG o And C, preserving the heat for 2 hours, and removing organic matters to obtain a pattern consisting of silicon dioxide.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A siloxane-based two-photon photoresist is characterized by comprising the following components in percentage by mass: 30-99.9wt% of a siloxane compound, 0-69.9wt% of a reactive cross-linking agent, 0.1-5wt% of a two-photon initiator, the siloxane compound being at least one compound with a terminal group of either a (meth) acrylate group disubstituted polymethylsiloxane resin or an octa (meth) acrylate group substituted silsesquioxane, the octa (meth) acrylate group substituted silsesquioxane being at least one compound according to the general chemical formula (II):
in the formula, R 2 Selected from one of the following groups:
、
。
2. a siloxane-based two-photon photoresist according to claim 1 wherein the polymethylsiloxane resin with terminal groups disubstituted with (meth) acrylate groups is at least one compound according to the general chemical formula (I):
wherein n = a natural number of 2-20,
R 1 selected from one of the following groups:
3. a siloxane-based two-photon photoresist according to claim 1 wherein the reactive crosslinker is comprised of any one or two or more of the following compounds: bisphenol a di (meth) acrylate, ethoxylated bisphenol a di (meth) acrylate, polyethylene glycol (200) di (meth) acrylate, polyethylene glycol (400) di (meth) acrylate, polyethylene glycol (600) di (meth) acrylate, trimethylolpropane triacrylate, ethoxylated trimethylolpropane triacrylate, pentaerythritol tetraacrylate, dipentaerythritol pentaacrylate, or dipentaerythritol hexaacrylate.
4. A siloxane-based two-photon photoresist according to claim 1 wherein the two-photon initiator is comprised of any one or two or more of the following compounds: 2-isopropylthioxanthone, 7-diethylamino-3-thenoylcoumarin, 3- (2-benzimidazolyl) -7- (diethylamino) coumarin, 7-diethylamino-3- (1-methyl-2-benzimidazolyl) coumarin, 3- (2 '-benzothiazolyl) -7-diethylaminocoumarin or 3,3' -carbonylbis (7-diethylaminocoumarin).
5. A method of preparing a siloxane-based two-photon photoresist according to any one of claims 1 to 4, comprising the steps of: uniformly mixing a siloxane compound and an active cross-linking agent in a yellow light chamber according to a proportion, continuously adding a two-photon initiator according to a proportion, and uniformly mixing on a roller mixer to obtain the siloxane-based two-photon photoresist.
6. A method of using a siloxane based two-photon photoresist according to any one of claims 1 to 4, comprising the steps of:
s1: dripping 1-2ml of siloxane-based two-photon photoresist on a spin-coating substrate;
s2: exposing the two-photon photoresist of siloxane by using a femtosecond laser direct writing device;
s3: immersing the exposed two-photon photoresist of siloxane into a developing solution for developing to obtain a photoetching pattern;
s4: and (4) putting the developed photoetching pattern into a high-temperature oven, heating, and removing organic matters to obtain a pattern consisting of silicon dioxide.
7. The method as claimed in claim 6, wherein the femtosecond laser direct writing wavelength in S2 is 700-900nm, the laser pulse is 60-150fs, and the laser repetition frequency is 10-200 MHz.
8. The method of claim 6, wherein the developing solution in S3 is any one or more of the following compounds: acetone, 1-ethoxy-2-propanol, isopropanol, propylene glycol methyl ether acetate or xylene, and developing for 6-30 min.
9. The method as claimed in claim 6, wherein the temperature of S4 is 500-1000 deg.C and the holding time is 0.5-5 h.
10. Use of a method of using a siloxane-based two-photon photoresist according to claim 6 in an optical waveguide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210188866.4A CN114415471B (en) | 2022-03-01 | 2022-03-01 | Siloxane-based two-photon photoresist and preparation method, use method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210188866.4A CN114415471B (en) | 2022-03-01 | 2022-03-01 | Siloxane-based two-photon photoresist and preparation method, use method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114415471A CN114415471A (en) | 2022-04-29 |
| CN114415471B true CN114415471B (en) | 2022-09-02 |
Family
ID=81261798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210188866.4A Active CN114415471B (en) | 2022-03-01 | 2022-03-01 | Siloxane-based two-photon photoresist and preparation method, use method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114415471B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108929392A (en) * | 2018-04-17 | 2018-12-04 | 江南大学 | A kind of silicon substrate two-photon initiator and preparation method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT505533A1 (en) * | 2007-08-14 | 2009-02-15 | Austria Tech & System Tech | METHOD FOR THE PRODUCTION OF OPTICAL WAVE-LADDER, LADDER PLATE AND CONDUCTOR PACKAGED IN A SUPPORTED, PARTICULARLY FLEXIBLE POLYMERMATERAL, AND USE |
| CN101750895A (en) * | 2008-12-16 | 2010-06-23 | 华东理工大学 | Silicon-containing (meth)acrylate light-cured stamping adhesive for ultraviolet nanometer-sized stamping and application thereof |
| CN102174059B (en) * | 2011-02-23 | 2013-05-01 | 上海交通大学 | Sulfydryl-containing low polysiloxane compound, ultraviolet photoresist composition thereof, and impressing process |
| CN105278239A (en) * | 2014-05-30 | 2016-01-27 | 青岛科技大学 | Stereo-lithography rapid-prototyping polysiloxane photosensitive resin composition and preparation method and application thereof |
| CN109917619A (en) * | 2019-03-15 | 2019-06-21 | 史强 | A kind of two-photon polymerized organosilicon photoetching compositions and its curing method |
-
2022
- 2022-03-01 CN CN202210188866.4A patent/CN114415471B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108929392A (en) * | 2018-04-17 | 2018-12-04 | 江南大学 | A kind of silicon substrate two-photon initiator and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114415471A (en) | 2022-04-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2159262B1 (en) | Optical waveguide comprising a resin film | |
| KR101554747B1 (en) | Photosensitive resin composition cured photosensitive resin product photosensitive resin film cured photosensitive resin film product and optical waveguide produced by using those products | |
| KR102289199B1 (en) | Manufacturing method for substrate having lyophilic portion and lyophobic portion, composition and forming method for conductive film | |
| CN102681285B (en) | The preparation method of micro-cup substrate and display device | |
| CN101587297A (en) | Preparation for titanium dioxide based organic-inorganic composite film and method for preparing micro-optic device by adopting film | |
| WO2015033893A1 (en) | Photosensitive resin composition for forming member having curved shape, photosensitive resin film for forming member having curved shape using said composition, and lens member manufactured using said composition or said film | |
| CN104246613A (en) | Method of processing a photosensitive structure | |
| CN114415471B (en) | Siloxane-based two-photon photoresist and preparation method, use method and application thereof | |
| CN101593929B (en) | Method for preparing hybrid medium of waveguide distributed feedback structure with fluctuant surface | |
| CN111983892B (en) | Photo-induced antioxidant polymerization-inhibition femtosecond laser photoresist and preparation method thereof | |
| CN108358465B (en) | Preparation method of composite film material with optical switch and photocuring function | |
| JP3273519B2 (en) | Method for manufacturing polysiloxane-based optical waveguide | |
| CN114527630B (en) | Femtosecond laser direct writing method for zirconium dioxide micro-nano pattern | |
| KR100705759B1 (en) | Manufacturing Method for Planar Multimode Optical Waveguide by Direct Photopatterning | |
| JP2014153411A (en) | Photosensitive resin composition and cured product of the same | |
| CN114326295B (en) | Femtosecond laser direct writing method for zinc oxide micro-nano pattern | |
| JP2014174374A (en) | Photosensitive resin composition and cured product of the same | |
| KR102624794B1 (en) | Black Photosensitive Resin Composition | |
| JP2021152621A (en) | Photosensitive resin composition | |
| JPWO2009063945A1 (en) | Optical waveguide resin composition and optical waveguide | |
| KR20170113150A (en) | Method of Forming Colored Cured Product | |
| KR20130116649A (en) | Formulation of core solution for application to optical amplifiers | |
| JPWO2012133429A1 (en) | Negative photosensitive resin composition | |
| WO2023208153A1 (en) | Branched organosilicon material | |
| CN116577964A (en) | Cationic two-photon photoresist based on ternary polymer and patterning method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |