CN114414975A - Silicon carbide MOSFET junction temperature on-line measuring method and system - Google Patents

Silicon carbide MOSFET junction temperature on-line measuring method and system Download PDF

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CN114414975A
CN114414975A CN202210047622.4A CN202210047622A CN114414975A CN 114414975 A CN114414975 A CN 114414975A CN 202210047622 A CN202210047622 A CN 202210047622A CN 114414975 A CN114414975 A CN 114414975A
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temperature
silicon carbide
electrical parameter
carbide mosfet
sensitive electrical
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郭亚慧
孙鹏
李焕林
蔡雨萌
赵志斌
王异凡
刘黎
邵先军
曾明全
王少华
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North China Electric Power University
Electric Power Research Institute of State Grid Zhejiang Electric Power Co Ltd
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North China Electric Power University
Electric Power Research Institute of State Grid Zhejiang Electric Power Co Ltd
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    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract

The method and system for on-line measuring junction temperature of silicon carbide MOSFET (metal oxide semiconductor field effect transistor) comprises the steps of drawing dynamic temperature-sensitive electrical parameter values V of silicon carbide MOSFET devices under different current levelsDTSEP1、VDTSEP2Junction temperature TjThe relationship curve of (1); according to the dynamic temperature-sensitive electrical parameter value, the load current I and the junction temperature T of the devicejConstructing an analytic model according to the relationship; according to the dynamic temperature-sensitive electrical parameter value V of the deviceDTSEP1And VDTESP2Load current I and junction temperature TjAnalytic model and dynamic temperature-sensitive electrical parameter V under working condition to be measuredDTSEP1And VDTESP2The load current I of the device in online operation under different working conditions is obtained, and the junction temperature of the device in online operation is determined. The invention can indirectly measure the junction temperature of the silicon carbide MOSFET under any working condition, provides a basis for reliability research, state monitoring and health management of the silicon carbide in practical application, and is beneficial to ensuring the reliable operation of a power system.

Description

Silicon carbide MOSFET junction temperature on-line measuring method and system
Technical Field
The invention relates to a measuring method and a measuring system, in particular to a method and a system for measuring a plurality of electrical parameters of a silicon carbide MOSFET (metal oxide semiconductor field effect transistor) on-line junction temperature.
Background
Power electronic devices are one of the important components of power electronic systems, and have been widely used in the fields of electric vehicles and the like. The actual working condition of the power electronic device is very severe, and in order to ensure that the power electronic device can safely and stably operate, the reliability of the power electronic device is very necessary to be researched.
The silicon carbide power device is used as a new generation wide bandgap semiconductor device, and compared with the traditional power device, the silicon carbide power device has the advantages of high blocking voltage, high switching frequency, high temperature resistance and the like, has a wide application prospect in a high power density power electronic system, and particularly has an obvious application effect and is concerned in a small and medium-capacity high-frequency converter of a silicon carbide metal-oxide semiconductor field-effect transistor (MOSFET). With the maturity of silicon carbide power devices, reliability problems in practical applications become more prominent. The increase in chip temperature is one of the main causes of failure of power electronics. Therefore, the real-time monitoring of the junction temperature of the silicon carbide MOSFET under the actual working condition has very important significance on the aspects of long-term operation reliability, state monitoring, health management and the like.
Currently, junction temperature measurement methods of silicon carbide MOSFETs mainly include physical contact methods, optical methods, thermal network methods, and Temperature Sensitive Electrical Parameters (TSEP) methods. The physical contact method and the optical method are simple and easy to implement, but the packaging structure needs to be damaged or changed to leave a measuring channel, so that the method is relatively invasive. In addition, in the aspect of response speed of junction temperature measurement, due to the existence of heat capacity of a contact layer of a physical contact method, the need of a corresponding optical processing process of an optical method and the need of complex model calculation of a thermal network method, the method is greatly limited. The temperature-sensitive electrical parameter method is characterized in that the temperature of the current device is represented by measuring an electrical parameter which changes along with the temperature, the device is used as a temperature sensing device, and the temperature information of the chip is indirectly reflected on the value change of part of the electrical parameter. In contrast, the temperature-sensitive electrical parameter method only needs to measure external electrical parameters, does not need to change the original packaging structure, can have a rapid response capability at a mu s level, and is a very potential junction temperature online measurement method at present.
In the related research of realizing the online junction temperature measurement of the silicon carbide MOSFET by using the temperature-sensitive electrical parameters, a large number of electrical parameters have the temperature-sensitive characteristic.
Conventional methods mostly use the temperature-sensitive properties of individual parameters for calibration measurements. Wherein:
(1) static temperature-sensitive electrical parameter of device
The measurement conditions such as threshold voltage, transfer curve, on-resistance under low current, output curve and the like do not accord with the online operation condition of the device, and online junction temperature measurement is difficult to realize.
For example, although the method for measuring the internal resistance of the gate can be applied to the switching condition, the linearity and the sensitivity of the calibration curve of the method depend on the gate metallization material, the gate layout and the manufacturing process to a great extent, and the application range is limited.
(2) Many parameters in the device switching process also change with temperature, and are called Dynamic Temperature Sensitive Electrical Parameters (DTSEPs).
Such as grid peak current, grid characteristic current and other relevant parameters reflecting the temperature-sensitive characteristic of grid internal resistance, and has limited application range.
Parameters such as the change rate of the transient drain-source current of the switch, the change rate of the drain-source voltage of the switch, the turn-off delay and the like change along with the change of the load current, the load current changes, and the calibration curve also changes along with the change. When the junction temperature is measured on line, the junction temperature can be calculated by measuring the load current in addition to the temperature-sensitive electrical parameter value. In actual engineering operation, the load current is usually a periodic function of time, the function is comprehensively determined by various factors such as a working condition, a control strategy, a converter topology and the like, the measurement difficulty of the load current is high, the precision is low, and thus, the junction temperature online measurement has a large deviation, such as the prior art: CN209542769U discloses an invention patent of SIC MOSFET module junction temperature on-line measuring device based on opening dI _ (ds)/dt.
In the traditional method, although a few temperature-sensitive electrical parameters are combined to measure the junction temperature, the temperature-sensitive electrical parameters are required to have a linear relation with the same related variable except the junction temperature, and most of dynamic temperature-sensitive electrical parameters do not have the condition, such as the prior art: CN112556868B discloses a SiC MOSFET junction temperature detection method based on combined temperature-sensitive electrical parameter sensitivity enhancement.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a method and a system for measuring a plurality of electrical parameters of a silicon carbide MOSFET (metal oxide semiconductor field effect transistor) on-line junction temperature. By utilizing the advantage of wide application range of the dynamic temperature-sensitive electrical parameters, but generally having no linear relation to other related variables except the junction temperature, the model is constructed and combined with two temperature characteristic curves of the dynamic temperature-sensitive electrical parameters, so that the influence of the load current on the measurement of the junction temperature is eliminated. Therefore, the method avoids the phenomenon that in the actual engineering operation, because the load current is a periodic function of time and is comprehensively determined by various factors such as working conditions, control strategies, converter topology and the like, the measurement difficulty of the load current is high, the precision is low, and further, the junction temperature on-line measurement has large deviation. The effective measurement of the on-line junction temperature of the silicon carbide MOSFET is realized, and the technical scheme is as follows:
the online junction temperature measuring method of a plurality of electrical parameters of the silicon carbide MOSFET is characterized in that: the method comprises the following steps:
the method comprises the following steps: drawing dynamic temperature-sensitive electrical parameters of silicon carbide MOSFET device under different current levelsValue VDTSEP1Junction temperature TjThe relationship of (1). (selected dynamic temperature-sensitive Electrical parameter VDTSEP1Linear relation with temperature and nonlinear relation with load current);
step two: drawing dynamic temperature-sensitive electrical parameter value V of silicon carbide MOSFET device under different current levelsDTSEP2Junction temperature TjThe relationship of (1). (selected dynamic temperature-sensitive Electrical parameter VDTSEP2Linear relation with temperature and nonlinear relation with load current);
step three: according to the dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET deviceDTSEP1And VDTESP2Load current I and junction temperature TjConstructing an analytic model according to the relation;
step four: according to the dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET deviceDTSEP1And VDTESP2Load current I and junction temperature TjAnalytic model and dynamic temperature-sensitive electrical parameter V under working condition to be measuredDTSEP1And VDTESP2The load current I of the device running on line under different working conditions is obtained;
step five: according to the dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET deviceDTSEP1And VDTESP2Load current I and junction temperature TjAnd determining the junction temperature of the device in online operation according to the analytical model and the load current I.
The invention also discloses a system for measuring the on-line junction temperature of a plurality of electrical parameters of the silicon carbide MOSFET, which is characterized by comprising the following components:
a silicon carbide MOSFET device;
and the driving module is used for providing a grid driving signal for the semiconductor device. Can send out double pulse signals and periodic signals to control the device to be turned off;
a main circuit for providing electrical connection to the semiconductor device such that the device can operate in a double pulse mode or a continuous switching mode;
the load module is used for changing the operation condition of the semiconductor device so that the device can continuously operate under different current levels, and comprises a load resistor and a load inductor;
and the electrical parameter measuring module is used for extracting relevant temperature-sensitive electrical parameters and calculating the on-line junction temperature.
And the heating module is used for providing ambient temperature for the semiconductor device so that the junction temperature of the device rises to a set value. Comprises a heating table capable of setting temperature;
and the heat dissipation module is used for dissipating heat of the semiconductor device.
Compared with the method for realizing the on-line junction temperature measurement of the silicon carbide MOSFET by using a single temperature-sensitive electrical parameter in the conventional method, the on-line junction temperature measurement method and the system for the silicon carbide MOSFET provided by the invention have the following advantages:
the junction temperature of the silicon carbide MOSFET under any working condition can be indirectly measured, the application range is wider, the junction temperature measurement result is more accurate, and the practicability is higher. In practical application, the junction temperature of the silicon carbide MOSFET can be effectively monitored on line, important basis is provided for reliability research, state monitoring and health management of the silicon carbide MOSFET in practical application, the method has important significance for improving the economy and reliability of the silicon carbide MOSFET in application, and the method is favorable for ensuring the reliable operation of a power system.
Drawings
Fig. 1 is a schematic flow chart of an implementation of a method for measuring a plurality of electrical parameters of a silicon carbide MOSFET on-line junction temperature according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a system for on-line junction temperature measurement of a plurality of electrical parameters of a silicon carbide MOSFET in accordance with an embodiment of the present invention;
FIG. 3 shows a temperature characteristic curve of the maximum rate of change of the voltage of the turn-on transient drain-source in the embodiment of the present invention;
fig. 4 is a temperature characteristic curve of the maximum rate of change of the turn-on transient drain-source current in the embodiment of the present invention.
Detailed Description
Junction temperature measurement is an important basis for thermal characterization, reliability research, condition monitoring and health management of power semiconductor devices, where methods based on temperature-sensitive electrical parameters are highly desired. Silicon carbide MOSFET is used as a new generation of wide bandgap semiconductor device, has excellent performances of high voltage, high frequency and low loss, is gradually widely applied in the fields of aerospace, electric power systems, electric automobiles and the like, and the application of temperature-sensitive electrical parameters in junction temperature measurement faces new challenges. The silicon carbide MOSFET has smaller conduction voltage drop and resistance, faster switching transient process and considerable electromagnetic interference caused by the switching transient process also put higher requirements on the measurement of related temperature-sensitive electrical parameters in the aspects of time resolution, precision, interference resistance and the like.
In order to eliminate the deviation of junction temperature on-line measurement caused by large measurement difficulty and low precision of load current in actual engineering operation. The invention provides a method for online measurement of junction temperature of a silicon carbide MOSFET. Most dynamic temperature-sensitive electrical parameters change along with temperature and load current, such as the change rate of the transient drain-source voltage of a switch, the change rate of the transient drain-source current of the switch, turn-off delay and the like, approximately form a linear relation with the temperature, the sensitivity of the parameter changing along with the temperature depends on the magnitude of the load current, and the relation between the parameter and the load current is generally nonlinear. Can be approximated by the formulae (1) and (2).
VDTSEP1＝(p0I2+p1I+p2)T+p3I2+p4I+p5 (1)
VDTSEP2＝(k0I2+k1I+k2)T+k3I2+k4I+k5 (2)
Wherein VDTSEP1、VDTSEP2For dynamic temperature-sensitive electrical parameter values, p0、p1、p2、p3、p4、p5、k0、k1、k2、k3、k4、k5Are coefficients obtained by the fitting.
From the above formula, if the junction temperature is obtained only by a single dynamic temperature-sensitive electrical parameter, and after obtaining the calibration curve, the junction temperature can be calculated only by obtaining the magnitude of the load current while measuring the temperature-sensitive parameter on line. In actual engineering operation, the load current is usually a periodic function of time, the function is comprehensively determined by various factors such as a working condition, a control strategy, a converter topology and the like, the measurement difficulty of the load current is high, the precision is low, and the junction temperature online measurement has large deviation.
The invention provides an online junction temperature measurement method for a plurality of electrical parameters of a silicon carbide MOSFET, which comprises the steps of fitting by adopting a linear regression method to obtain a calibration curve, combining formulas of two dynamic temperature-sensitive electrical parameters influenced by temperature and load current, substituting the formulas into a solution equation of two temperature-sensitive electrical parameter results measured online to obtain the load current:
aI4+bI3+cI2+dI+e＝0 (3)
wherein
a＝p0k3-k0p3
b＝p0k4+p1k3-k0p4-k1p3
c＝p0(k5-VDTSEP2)+p1k4+p2k3-k0(p5-VDTESP1)-k1p4-k2p3
d＝p1(k5-VDTSEP2)+p2k4-k1(p5-VDTESP1)-k2p4
e＝p2(k5-VDTSEP2)-k2(p5-VDTESP1)
And then substituting the obtained load current result into the formula (1) or the formula (2), solving the value of the temperature at the moment, and eliminating the large deviation of the junction temperature on-line measurement caused by large measurement difficulty and low precision of the on-line load current. And because dynamic temperature-sensitive electrical parameters such as the change rate of the drain-source electrode voltage of the switch, the change rate of the drain-source electrode current of the switch and the like are suitable for the switching-on process of all devices, the method provided by the invention has wide application range.
In practical application, the method for measuring the junction temperature on line provided by the invention comprises the following steps:
the online junction temperature measuring method of a plurality of electrical parameters of the silicon carbide MOSFET is characterized in that: the method comprises the following steps:
1. the online junction temperature measuring method of a plurality of electrical parameters of the silicon carbide MOSFET is characterized in that: the method comprises the following steps:
the method comprises the following steps: drawing dynamic temperature-sensitive electrical parameter value V of silicon carbide MOSFET device under different current levelsDTSEP1Junction temperature TjThe relationship of (1). (selected dynamic temperature-sensitive Electrical parameter VDTSEP1Linear relation with temperature and nonlinear relation with load current);
(1) drive resistor R of configuration drive moduleGDriving forward voltage VGHAnd driving a negative voltage VGLAnd the bus voltage V of the silicon carbide MOSFET deviceDS；
(2) Setting a driving module to output a double-pulse waveform, and adjusting the pulse width length to enable the silicon carbide MOSFET device to be switched on at a certain current level;
(3) configuring a heating module, fixing the silicon carbide MOSFET device on a heating table, applying ambient temperature through the heating table to raise the junction temperature of the silicon carbide MOSFET device to a specified temperature, and collecting V in the temperature raising processDTSEP1To plot the junction temperature T at that current leveljAnd dynamic temperature sensitive electrical parameter value VDTSEP1The variation relation curve of (2);
(4) continuously increasing the pulse width length of the driving module, increasing the opening current level of the silicon carbide MOSFET device, repeating the step (3), and drawing the junction temperature Tj and the dynamic temperature-sensitive electrical parameter value V under at least 4 different current levelsDTSEP1The variation of (2).
Step two: drawing dynamic temperature-sensitive electrical parameter value V of silicon carbide MOSFET device under different current levelsDTSEP2Junction temperature TjThe relationship of (1). (selected dynamic temperature-sensitive Electrical parameter VDTSEP2Linear relation with temperature and nonlinear relation with load current);
(1) maintaining the voltage setting of the driving module and the silicon carbide MOSFET device bus in the first step;
(2) setting the same pulse width of the double-pulse waveform as that in the step one to enable the silicon carbide MOSFET device to be switched on at a corresponding current level;
(3) configuring a heating module to apply ambient temperature via a heating stage to make the silicon carbide MOSFET deviceThe junction temperature rises to a specified temperature, and a dynamic temperature-sensitive electrical parameter value V in the temperature rising process is collectedDTSEP2To plot the junction temperature T at that current leveljAnd dynamic temperature sensitive electrical parameter value VDTSEP2The variation relation curve of (2);
(4) continuously increasing the pulse width length of the driving module, increasing the opening current level of the device, repeating the step (3), and drawing the junction temperature T under at least 4 different current levelsjAnd dynamic temperature sensitive electrical parameter value VDTSEP2The variation of (2).
Step three: according to the dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET deviceDTSEP1And VDTESP2Load current I and junction temperature TjConstructing an analytic model according to the relation;
(1) dynamic temperature sensitive electrical parameter value VDTSEP1The sensitivity of the device is determined by the magnitude of the load current I of the silicon carbide MOSFET device and the dynamic temperature-sensitive electrical parameter value VDTSEP1The relation with the load current is nonlinear, and a quadratic function is used for approximately representing the dynamic temperature-sensitive electrical parameter value VDTSEP1The dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET device is related to the change of the load current IDTSEP1Load current I and junction temperature TjCan be approximated by equation (1);
VDTSEP1＝(p0I2+p1I+p2)Tj+p3I2+p4I+p5 (1)
wherein VDTSEP1For dynamic temperature-sensitive electrical parameter values, p0、p1、p2、p3、p4、p5Are fitting coefficients.
(2) Dynamic temperature sensitive electrical parameter value VDTSEP2The sensitivity of the device is determined by the magnitude of the load current I of the silicon carbide MOSFET device and the dynamic temperature-sensitive electrical parameter value VDTSEP2The relation with the load current is nonlinear, and a quadratic function is used for approximately representing the dynamic temperature-sensitive electrical parameter value VDTSEP2The silicon carbide MOSFET device dynamically senses the temperature according to the change relation with the load current IParameter value VDTSEP2Load current I and junction temperature TjCan be approximated by equation (2);
VDTSEP2＝(k0I2+k1I+k2)Tj+k3I2+k4I+k5 (2)
wherein VDTSEP2Is a dynamic temperature sensitive electrical parameter value, k0、k1、k2、k3、k4、k5Are fitting coefficients.
(3) According to the dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET deviceDTSEP1And VDTESP2Load current I and junction temperature TjRespectively fitting dynamic temperature-sensitive electrical parameter values V by adopting a linear regression methodDTSEP1And dynamic temperature sensitive electrical parameter value VDTSEP2Junction temperature T of MOSFET device and silicon carbidejAnd an analytical model of the load current I, as shown in the relational expressions (1) and (2)
VDTSEP1＝(p0I2+p1I+p2)Tj+p3I2+p4I+p5 (1)
VDTSEP2＝(k0I2+k1I+k2)Tj+k3I2+k4I+k5 (2)
Wherein VDTSEP1、VDTSEP2For dynamic temperature-sensitive electrical parameter values, p0、p1、p2、p3、p4、p5、k0、k1、k2、k3、k4、k5The coefficients obtained are fitted for a linear regression method.
Step four: according to the dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET deviceDTSEP1And VDTESP2Load current I and junction temperature TjAnalytic model and dynamic temperature-sensitive electrical parameter V under working condition to be measuredDTSEP1And VDTESP2The load current I of the device running on line under different working conditions is obtained;
(1) the driving module is configured to output continuous pulses, so that the silicon carbide MOSFET device works in a continuous switching mode, the frequency and the duty ratio are adjusted, and the operation condition of the silicon carbide MOSFET device is continuously changed;
(2) measuring dynamic temperature-sensitive electrical parameter value V of silicon carbide MOSFET device under different working conditions and under the condition that the device self-heat reaches the temperature balance stateDTSEP1And VDTESP2；
(3) Contrasting the dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET deviceDTSEP1And VDTESP2Load current I and junction temperature TjAnalytic model and dynamic temperature-sensitive electrical parameter V under working condition to be measuredDTSEP1And VDTESP2The value of (A) is obtained by performing mathematical operation, combining the formulas that two dynamic temperature-sensitive electrical parameters are influenced by temperature and load current, and substituting the combined formulas into two dynamic temperature-sensitive electrical parameter values V of the silicon carbide MOSFET device measured under the online working conditionDTSEP1And VDTESP2Solving an equation to obtain the load current:
aI4+bI3+cI2+dI+e＝0
wherein
a＝p0k3-k0p3
b＝p0k4+p1k3-k0p4-k1p3
c＝p0(k5-VDTSEP2)+p1k4+p2k3-k0(p5-VDTESP1)-k1p4-k2p3。
d＝p1(k5-VDTSEP2)+p2k4-k1(p5-VDTESP1)-k2p4
e＝p2(k5-VDTSEP2)-k2(p5-VDTESP1)
Step five: according to the dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET deviceDTSEP1And VDTESP2Load current I and junction temperature TjAnalysis model of (2) and load electricityFlow I, determining the junction temperature of the device operating online:
according to the dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET deviceDTSEP1And VDTESP2Load current I and junction temperature TjAnd (3) substituting the analytic model and the load current I into the formula (1) or the formula (2) to determine the junction temperature of the device in online operation.
Referring to fig. 2, the invention discloses an online junction temperature measurement system for a plurality of electrical parameters of a silicon carbide MOSFET, which is characterized by comprising:
a silicon carbide MOSFET device;
the driving module is used for providing a grid driving signal for the semiconductor device; can send out double pulse signals and periodic signals to control the device to be turned off;
a main circuit for providing electrical connection to the semiconductor device such that the device can operate in a double pulse mode or a continuous switching mode;
the load module is used for changing the operation condition of the semiconductor device so that the device can continuously operate under different current levels, and comprises a load resistor and a load inductor;
the electrical parameter measuring module is used for extracting relevant temperature-sensitive electrical parameters and calculating the on-line junction temperature;
the heating module is used for providing ambient temperature for the semiconductor device so that the junction temperature of the device rises to a set value, and comprises a heating table capable of setting the temperature;
and the heat dissipation module is used for dissipating heat of the semiconductor device.
Example 1:
fig. 1 is a schematic diagram of an implementation flow of a method for measuring multiple electrical parameters of a silicon carbide MOSFET on line junction temperature in an embodiment of the present invention, and as shown in the figure, a maximum change rate of a turn-on transient drain-source voltage and a maximum change rate of a turn-on transient drain-source voltage are selected as temperature-sensitive electrical parameters, and temperature characteristics of the two are combined to monitor junction temperature on line. The method comprises the following specific steps:
the method comprises the following steps: drawing the maximum change rate V of the voltage of the transient drain-source electrode of the dynamic temperature-sensitive electrical parameter switching-on of the silicon carbide MOSFET device under different current gradesDTSEP1Junction temperature TjThe relationship of (1). :
(1) drive resistor R of configuration drive moduleGDriving forward voltage VGHAnd driving a negative voltage VGLAnd the bus voltage V of the silicon carbide MOSFET deviceDS
(2) Setting a driving module to output a double-pulse waveform, and adjusting the pulse width length to enable the silicon carbide MOSFET device to be switched on when the I is 3A;
(3) configuring a heating module, fixing the test piece on a heating table, increasing the junction temperature of the device to 130 ℃ by applying ambient temperature on the heating table, and collecting the maximum change rate V of the voltage of an open transient drain-source electrode in the temperature rise processDTSEP1To plot the junction temperature T at that current leveljMaximum rate of change V of voltage of drain-source electrode and turn-on transient stateDTSEP1The variation relation curve of (2);
(4) continuously increasing the pulse width length of the driving module, increasing the opening current level of the amplifier, repeating the step (3), and drawing junction temperatures Tj and V under at least 4 different current levelsDTSEP1Fig. 3, as shown in fig. 3.
Step two: drawing the maximum change rate V of the drain-source current of the dynamic temperature-sensitive electrical parameter switching-on transient state of the silicon carbide MOSFET device under different current levelsDTSEP2Junction temperature TjThe relationship curve of (1):
(1) maintaining the voltage setting of the driving module and the silicon carbide MOSFET device bus in the first step;
(2) setting the same pulse width of the double-pulse waveform as that in the step one to enable the silicon carbide MOSFET device to be switched on at a corresponding current level;
(3) configuring a heating module, increasing the junction temperature of the silicon carbide MOSFET device to 130 ℃ by applying ambient temperature on a heating table, and collecting the maximum change rate V of the current of an on-transient drain-source electrode in the temperature rise processDTSEP2To plot the junction temperature T at that current leveljMaximum rate of change of drain-source current with on transientDTSEP2The variation relation curve of (2);
(4) continuously increasing the pulse width length of the driving module, increasing the opening current level of the silicon carbide MOSFET device, repeating the step (3), and drawing junction temperature T under at least 4 different current levelsjMaximum rate of change of drain-source current with on transientDTSEP2The variation of (2).
Step three: switching on the maximum change rate V of the transient drain-source voltage according to the dynamic temperature-sensitive electrical parameter of the silicon carbide MOSFET deviceDTSEP1And turn-on transient drain-source voltage maximum rate of change VDTESP2Load current I and junction temperature TjThe analytical model is constructed according to the relation of (1):
(1) maximum change rate V of on-state transient drain-source voltageDTSEP1The sensitivity of the device with the temperature change depends on the size of the load current I of the device, and the maximum change rate V of the voltage of the on-transient drain-source electrode can be approximately represented by a quadratic functionDTSEP1In relation to the variation of the load current I.
(2) Maximum rate of change of current V of drain-source in turn-on transient stateDTSEP2The sensitivity of the device with the temperature change depends on the magnitude of the load current I of the device, and the maximum change rate V of the on-transient drain-source current can be approximately expressed by a quadratic functionDTSEP2In relation to the variation of the load current I.
(3) Respectively fitting the maximum change rate V of the voltage of the transient drain-source electrode during opening by adopting a linear regression methodDTSEP1And maximum rate of change of turn-on transient drain-source current VDTSEP2Junction temperature T with devicejThe relation between the load current I and the load current I is shown in the formulas (1) and (2)
VDTSEP1＝(p0I2+p1I+p2)Tj+p3I2+p4I+p5 (1)
VDTSEP2＝(k0I2+k1I+k2)Tj+k3I2+k4I+k5 (2)
Wherein VDTSEP1、VDTSEP2For dynamic temperature-sensitive electrical parameter values, p0、p1、p2、p3、p4、p5、k0、k1、k2、k3、k4、k5According to the step one,And secondly, fitting the obtained coefficients by using a linear regression method of the obtained experimental data:
p＝[4.97E-06 1.69E-05 9.03E-05 -0.002049 0.05296 0.1799]；
k＝[-2.35E-06 3.23E-05 0.0001107 0.00019 -0.0035 0.07993]。
step four: switching on the maximum change rate V of the transient drain-source voltage according to the dynamic temperature-sensitive electrical parameter of the silicon carbide MOSFET deviceDTSEP1And maximum rate of change of turn-on transient drain-source current VDTESP2Load current I and junction temperature TjAnalytic model and dynamic temperature-sensitive electrical parameter V under working condition to be measuredDTSEP1And VDTESP2The load current I of the device running on line under different working conditions is obtained:
(1) and configuring a driving module, outputting continuous pulses, enabling the silicon carbide MOSFET device to work in a continuous switching mode, and adjusting the frequency f to be 100kHz and the duty ratio D to be 0.5.
(2) Measuring the maximum change rate V of the voltage of the on-transient drain-source electrode of the silicon carbide MOSFET device under different working conditions and under the condition that the self-heating of the device reaches the temperature balance stateDTSEP1And maximum rate of change of turn-on transient drain-source current VDTESP2
(3) Comparing with the maximum change rate V of the voltage of the transient drain-source electrode of the silicon carbide MOSFET deviceDTSEP1And maximum rate of change of turn-on transient drain-source current VDTESP2And carrying out mathematical operation with a corresponding analytical model, combining the formulas that the two dynamic temperature-sensitive electrical parameters are influenced by temperature and load current, substituting the formulas into two temperature-sensitive electrical parameter result solution equations measured on line to obtain the load current:
aI4+bI3+cI2+dI+e＝0
wherein
a＝p0k3-k0p3
b＝p0k4+p1k3-k0p4-k1p3
c＝p0(k5-VDTSEP2)+p1k4+p2k3-k0(p5-VDTESP1)-k1p4-k2p3
d＝p1(k5-VDTSEP2)+p2k4-k1(p5-VDTESP1)-k2p4
e＝p2(k5-VDTSEP2)-k2(p5-VDTESP1)
To obtain I-8.283398A.
Step five: switching on the maximum change rate V of the transient drain-source voltage according to the dynamic temperature-sensitive electrical parameter of the silicon carbide MOSFET deviceDTSEP1And maximum rate of change of turn-on transient drain-source current VDTESP2Load current I and junction temperature TjAnd determining the junction temperature of the device in online operation according to the analytical model and the load current I. :
switching on the maximum change rate V of the transient drain-source voltage according to the load current I and the dynamic temperature-sensitive electrical parameter of the silicon carbide MOSFET deviceDTSEP1And (3) substituting the analytical models of the load current I and the junction temperature Tj into the formula (1) or the formula (2) to obtain the junction temperature T of the device which is 81.08553 ℃.
The advantage of wide application range of the dynamic temperature-sensitive electrical parameters is utilized to realize the effective measurement of the on-line junction temperature of the silicon carbide MOSFET.
The method and the system for measuring the on-line junction temperature of the plurality of electrical parameters of the silicon carbide MOSFET have higher accuracy. Under the junction temperature measuring method provided by the invention, the influence of the load current on the junction temperature measurement is eliminated by combining two dynamic temperature-sensitive electrical parameter temperature characteristic curves. Therefore, the method avoids the phenomenon that in the actual engineering operation, because the load current is a periodic function of time and is comprehensively determined by various factors such as working conditions, control strategies, converter topology and the like, the measurement difficulty of the load current is high, the precision is low, and further, the junction temperature on-line measurement has large deviation.
The method and the system for measuring the on-line junction temperature of the multiple electrical parameters of the multi-silicon carbide MOSFET have wider application range. Under the on-line junction temperature measuring method provided by the invention, the junction temperature is estimated by combining the temperature characteristics of two dynamic temperature-sensitive electrical parameters, and the method is suitable for all silicon carbide MOSFET devices and is not influenced by device manufacturers, batches and manufacturing processes; and the requirement on temperature-sensitive electrical parameters is lower, and the two parameters are not required to have linear relation to other related variables except the junction temperature, so that the method has wider application range.
The method and the system for measuring the on-line junction temperature of the plurality of electrical parameters of the silicon carbide MOSFET have stronger practicability. Under the online junction temperature measuring method provided by the invention, the load current is not required to be measured during online measurement of the electrical parameters, the parameter extraction circuit is easier to realize, the operation is simple and convenient, and the cost is lower.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are merely illustrative of the principles of the invention, but that various changes and modifications may be made without departing from the spirit and scope of the invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims (7)

1. The on-line measuring method of junction temperature of silicon carbide MOSFET, especially the on-line measuring method of junction temperature of multiple electrical parameters of silicon carbide MOSFET, its characteristic is: the method comprises the following steps:
the method comprises the following steps: drawing dynamic temperature-sensitive electrical parameter value V of silicon carbide MOSFET device under different current levelsDTSEP1Junction temperature TjThe relationship curve of (1);
step two: drawing dynamic temperature-sensitive electrical parameter value V of silicon carbide MOSFET device under different current levelsDTSEP2Junction temperature TjThe relationship curve of (1);
step three: according to the dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET deviceDTSEP1And VDTESP2Load current I and junction temperature TjConstructing an analytic model according to the relation;
step four: according to the dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET deviceDTSEP1And VDTESP2Load current I and junction temperature TjAnalytic model and dynamic temperature-sensitive electrical parameter V under working condition to be measuredDTSEP1And VDTESP2The load current I of the device running on line under different working conditions is obtained;
step five: according to the dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET deviceDTSEP1And VDTESP2Load current I and junction temperature TjAnd determining the junction temperature of the device in online operation according to the analytical model and the load current I.
2. A method of on-line junction temperature measurement of a plurality of electrical parameters of a silicon carbide MOSFET as claimed in claim 1 wherein: the first step further comprises the following steps:
(1) selected dynamic temperature sensitive electrical parameter VDTSEP1The relation with the temperature needs to be linear, and the relation with the load current can be nonlinear;
(2) drive resistor R of configuration drive moduleGDriving forward voltage VGHAnd driving a negative voltage VGLAnd the bus voltage V of the silicon carbide MOSFET deviceDS；
(3) Setting a driving module to output a double-pulse waveform, and adjusting the pulse width length to enable the silicon carbide MOSFET device to be switched on at a certain current level;
(4) configuring a heating module, fixing the silicon carbide MOSFET device on a heating table, applying ambient temperature through the heating table to raise the junction temperature of the silicon carbide MOSFET device to a specified temperature, and collecting V in the temperature raising processDTSEP1To plot the junction temperature T at that current leveljAnd dynamic temperature sensitive electrical parameter value VDTSEP1The variation relation curve of (2);
(5) continuously increasing the pulse width length of the driving module, increasing the opening current level of the silicon carbide MOSFET device, repeating the step (3), and drawing the junction temperature Tj and the dynamic temperature-sensitive electrical parameter value V under at least 4 different current levelsDTSEP1The variation of (2).
3. A method of on-line junction temperature measurement of a plurality of electrical parameters of a silicon carbide MOSFET as claimed in claim 2 wherein: the second step further comprises the following steps:
(1) selected dynamic temperature sensitive electrical parameter VDTSEP2The relation with the temperature needs to be linear, and the relation with the load current can be nonlinear;
(2) maintaining the voltage setting of the driving module and the silicon carbide MOSFET device bus in the first step;
(3) setting the same pulse width of the double-pulse waveform as that in the step one to enable the silicon carbide MOSFET device to be switched on at a corresponding current level;
(4) configuring a heating module, increasing the junction temperature of the silicon carbide MOSFET device to a specified temperature by applying ambient temperature through a heating table, and collecting the dynamic temperature-sensitive electrical parameter value V in the temperature increase processDTSEP2To plot the junction temperature T at that current leveljAnd dynamic temperature sensitive electrical parameter value VDTSEP2The variation relation curve of (2);
(5) continuously increasing the pulse width length of the driving module, increasing the opening current level of the device, repeating the step (3) in the second step, and drawing junction temperature T under at least 4 different current levelsjAnd dynamic temperature sensitive electrical parameter value VDTSEP2The variation of (2).
4. A method of on-line junction temperature measurement of a plurality of electrical parameters of a silicon carbide MOSFET as claimed in claim 1 wherein: the third step further comprises the following steps:
(1) dynamic temperature sensitive electrical parameter value VDTSEP1The sensitivity of the device is determined by the magnitude of the load current I of the silicon carbide MOSFET device and the dynamic temperature-sensitive electrical parameter value VDTSEP1The relation with the load current is nonlinear, and a quadratic function is used for approximately representing the dynamic temperature-sensitive electrical parameter value VDTSEP1The dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET device is related to the change of the load current IDTSEP1Load current I and junction temperature TjCan be approximated by equation (1);
VDTSEP1＝(p0I2+p1I+p2)Tj+p3I2+p4I+p5 (1)
wherein VDTSEP1For dynamic temperature-sensitive electrical parameter values, p0、p1、p2、p3、p4、p5Is a fitting coefficient;
(2) dynamic temperature sensitive electrical parameter value VDTSEP2The sensitivity of the device is determined by the magnitude of the load current I of the silicon carbide MOSFET device and the dynamic temperature-sensitive electrical parameter value VDTSEP2The relation with the load current is nonlinear, and a quadratic function is used for approximately representing the dynamic temperature-sensitive electrical parameter value VDTSEP2The dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET device is related to the change of the load current IDTSEP2Load current I and junction temperature TjCan be approximated by equation (2);
VDTSEP2＝(k0I2+k1I+k2)Tj+k3I2+k4I+k5 (2)
wherein VDTSEP2Is a dynamic temperature sensitive electrical parameter value, k0、k1、k2、k3、k4、k5Is a fitting coefficient;
(3) according to the dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET deviceDTSEP1And VDTESP2Load current I and junction temperature TjRespectively fitting dynamic temperature-sensitive electrical parameter values V by adopting a linear regression methodDTSEP1And dynamic temperature sensitive electrical parameter value VDTSEP2Junction temperature T of MOSFET device and silicon carbidejAnd an analytical model of the load current I, which are expressed by the relational expressions (1) and (2).
5. The method of claim 4 wherein the method comprises the steps of: the fourth step further comprises the following steps:
(1) the driving module is configured to output continuous pulses, so that the silicon carbide MOSFET device works in a continuous switching mode, the frequency and the duty ratio are adjusted, and the operation condition of the silicon carbide MOSFET device is continuously changed;
(2) measuring the silicon carbide MOSFET device under different working conditions, because the deviceDynamic temperature-sensitive electrical parameter value V of silicon carbide MOSFET device under self-heating state reaching temperature balanceDTSEP1And VDTESP2；
(3) Contrasting the dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET deviceDTSEP1And VDTESP2Load current I and junction temperature TjAnalytic model and dynamic temperature-sensitive electrical parameter V under working condition to be measuredDTSEP1And VDTESP2The value of (A) is obtained by performing mathematical operation, combining the formulas that two dynamic temperature-sensitive electrical parameters are influenced by temperature and load current, and substituting the combined formulas into two dynamic temperature-sensitive electrical parameter values V of the silicon carbide MOSFET device measured under the online working conditionDTSEP1And VDTESP2Solving an equation to obtain the load current:
aI4+bI3+cI2+dI+e＝0
wherein
Figure FDA0003472875010000041
6. A method of on-line junction temperature measurement of a plurality of electrical parameters of a silicon carbide MOSFET as claimed in claim 1 wherein: the fifth step further comprises the following steps:
according to the dynamic temperature-sensitive electrical parameter value V of the silicon carbide MOSFET deviceDTSEP1And VDTESP2Load current I and junction temperature TjAnd (3) substituting the analytic model and the load current I into the formula (1) or the formula (2) to determine the junction temperature of the device in online operation.
7. An in-line junction temperature measurement system for a plurality of electrical parameters of a silicon carbide MOSFET, the system comprising:
a silicon carbide MOSFET device;
the driving module is used for providing a grid driving signal for the semiconductor device; can send out double pulse signals and periodic signals to control the device to be turned off;
a main circuit for providing electrical connection to the semiconductor device such that the device can operate in a double pulse mode or a continuous switching mode;
the load module is used for changing the operation condition of the semiconductor device so that the device can continuously operate under different current levels, and comprises a load resistor and a load inductor;
the electrical parameter measuring module is used for extracting relevant temperature-sensitive electrical parameters and calculating the on-line junction temperature; the heating module is used for providing ambient temperature for the semiconductor device so that the junction temperature of the device rises to a set value, and comprises a heating table capable of setting the temperature;
and the heat dissipation module is used for dissipating heat of the semiconductor device.
CN202210047622.4A 2022-01-17 2022-01-17 Silicon carbide MOSFET junction temperature on-line measuring method and system Pending CN114414975A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210396596A1 (en) * 2020-06-23 2021-12-23 Board Of Regents, The University Of Texas System Methods of measuring real-time junction temperature in silicon carbide power mosfet devices using turn-on delay, related circuits, and computer program products

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210396596A1 (en) * 2020-06-23 2021-12-23 Board Of Regents, The University Of Texas System Methods of measuring real-time junction temperature in silicon carbide power mosfet devices using turn-on delay, related circuits, and computer program products
US11525740B2 (en) * 2020-06-23 2022-12-13 Boards Of Regents, The University Of Texas System Methods of measuring real-time junction temperature in silicon carbide power MOSFET devices using turn-on delay, related circuits, and computer program products

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