CN114389050A - Narrow-dispersion-distance multi-frequency wave absorbing structure, wave absorbing device and preparation process of wave absorbing device - Google Patents
Narrow-dispersion-distance multi-frequency wave absorbing structure, wave absorbing device and preparation process of wave absorbing device Download PDFInfo
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- CN114389050A CN114389050A CN202111633003.5A CN202111633003A CN114389050A CN 114389050 A CN114389050 A CN 114389050A CN 202111633003 A CN202111633003 A CN 202111633003A CN 114389050 A CN114389050 A CN 114389050A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/007—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with means for controlling the absorption
Abstract
The invention provides a narrow discrete distance multi-frequency wave-absorbing structure, a wave-absorbing device and a preparation process thereof, wherein the multi-frequency wave-absorbing structure comprises the following components: a bottom metal ground plate; the dielectric layer is arranged on the bottom metal grounding plate; at least one middle rectangular metal patch is embedded into the medium layer from bottom to top in sequence; the top layer rectangular metal patch is arranged on the dielectric layer; the lengths of the middle rectangular metal patches embedded in the medium layer are sequentially decreased from bottom to top, the length of the middle rectangular metal patch positioned at the bottommost layer is smaller than that of the bottom metal grounding plate, the length of the middle rectangular metal patch positioned at the topmost layer is larger than that of the top rectangular metal patch, and the length difference between the middle rectangular metal patch positioned at the bottommost layer and the top rectangular metal patch is smaller than 10 mu m.
Description
Technical Field
The invention relates to a metamaterial wave absorber, in particular to a narrow discrete distance multi-frequency wave absorbing structure, a wave absorbing device and a preparation process thereof.
Background
The metamaterial wave absorber is used as an important component of an optical absorption device, has the advantages of high-efficiency absorption, ultrathin dielectric layer thickness, narrow absorption bandwidth, free design of pattern structure and the like, and attracts a great deal of research activity. The electromagnetic metamaterial has the characteristic of absorbing electromagnetic waves, the electromagnetic metamaterial is independently made into the wave absorbing agent, or the electromagnetic metamaterial is combined with the traditional wave absorbing material, the novel artificial composite wave absorbing material with lighter weight, thinner thickness, wider frequency band and stronger strength can be prepared, and the novel artificial composite wave absorbing material has the advantages that the regulation and control of dielectric constant and magnetic conductivity are easily realized, the characteristic impedance of the material can be well matched with the vacuum wave impedance, and the reflection strength of the electromagnetic waves can be greatly reduced.
In order to realize the multiband metamaterial absorber, various structural design methods are proposed. However, the discrete distance of adjacent absorbing frequencies is quite large, and in two adjacent frequencies, the larger discrete distance will inevitably ignore much of the information hidden in the non-resonant region. Therefore, in order to avoid information loss, the large discrete distance of the multi-band metamaterial absorber needs to be overcome.
Disclosure of Invention
The invention provides a narrow-dispersion-distance multi-frequency wave absorbing structure, which aims to solve the problem that the dispersion distance of adjacent wave absorbing frequencies in multi-frequency absorption of a metamaterial wave absorber is large.
According to a first aspect of the present invention, there is provided a narrow discrete distance multi-frequency wave absorbing structure, comprising:
a bottom metal ground plate;
the dielectric layer is arranged on the bottom metal grounding plate;
at least one middle rectangular metal patch is embedded into the medium layer from bottom to top in sequence;
the top layer rectangular metal patch is arranged on the dielectric layer;
the lengths of the middle rectangular metal patches embedded in the medium layer are sequentially decreased from bottom to top, the length of the middle rectangular metal patch positioned at the bottommost layer is smaller than that of the bottom metal grounding plate, the length of the middle rectangular metal patch positioned at the topmost layer is larger than that of the top rectangular metal patch, and the length difference between the middle rectangular metal patch positioned at the bottommost layer and the top rectangular metal patch is smaller than 10 mu m.
Optionally, a vertical distance between the middle rectangular metal patch positioned at the bottommost layer and the bottom layer metal ground plate is 1-3 μm; and/or: the vertical distance between adjacent middle rectangular metal patches is 1-3 μm; and/or: the vertical distance between the middle rectangular metal patch positioned at the topmost layer and the top rectangular metal patch is 1-3 μm.
Optionally, the bottom metal ground plate is rectangular and 59-61 μm long.
Optionally, the length of the top rectangular metal patch is 33-35 μm, and the width is 7-9 μm.
Optionally, the dielectric constant of the dielectric layer is 2.7-3.3, and the loss tangent is 0.001-0.003.
Optionally, the number of the middle rectangular metal patches is one.
Optionally, the number of the middle rectangular metal patches is two.
According to a second aspect of the invention, there is provided a narrow discrete distance multi-frequency wave absorbing device, comprising the wave absorbing device unit as provided in the first aspect of the invention.
According to a third aspect of the present invention, there is provided a method for manufacturing a multi-frequency wave absorber unit, comprising:
providing a bottom metal grounding plate;
preparing a dielectric layer on the bottom metal grounding plate, and embedding at least one middle rectangular metal patch in the dielectric layer; and
preparing a top rectangular metal patch on the dielectric layer;
the lengths of the middle rectangular metal patches embedded in the medium layer are sequentially decreased from bottom to top, the length of the middle rectangular metal patch positioned at the bottommost layer is smaller than that of the bottom metal grounding plate, and the length of the middle rectangular metal patch positioned at the topmost layer is larger than that of the top rectangular metal patch.
Optionally, a dielectric layer is prepared on the bottom metal grounding plate, and at least one middle rectangular metal patch is embedded in the dielectric layer; the method specifically comprises the following steps:
alternately preparing a first dielectric layer, a middle rectangular metal patch and a second dielectric layer on the bottom metal grounding plate; the middle rectangular metal patch is wrapped by the first dielectric layer and the second dielectric layer;
preparing the top rectangular metal patch on the second dielectric layer;
wherein the number of the middle rectangular metal patches is at least one.
According to the narrow-dispersion-distance multi-frequency wave-absorbing structure, the resonance unit consisting of the metal patches with different lengths and the dielectric layer is superposed on the bottom metal grounding plate, so that the metamaterial realizes the characteristic of high-efficiency wave absorption near a plurality of frequency points, the relative dispersion distance of absorption peaks of the metamaterial wave absorber is reduced, and a large amount of information in an off-resonance absorption area is released.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic cross-sectional structure view of a multi-frequency wave-absorbing structure provided in an exemplary embodiment of the invention;
fig. 2 is a schematic cross-sectional view of a basic dielectric resonance unit provided in an exemplary embodiment of the present invention;
FIG. 3 is a graph of the amplitude response of a basic dielectric resonant cell provided in an exemplary embodiment of the invention;
figure 4 is a top view of the multi-frequency wave-absorbing structure of figure 1;
fig. 5 is a schematic structural cross-sectional view of a dual-frequency wave-absorbing structure provided in an exemplary embodiment of the invention;
FIG. 6 is an amplitude response plot of a dual-frequency absorbing structure provided in an exemplary embodiment of the invention;
fig. 7 is a schematic cross-sectional structure view of a tri-band wave-absorbing structure provided in an exemplary embodiment of the invention;
figure 8 is an amplitude response graph of a tri-frequency wave absorbing structure provided in an exemplary embodiment of the invention;
fig. 9 is a schematic flow chart of a method for fabricating a multi-frequency wave absorber unit provided in an exemplary embodiment of the invention;
fig. 10 is a schematic flow chart of a method for manufacturing a multi-frequency wave absorber unit according to another exemplary embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terms "first," "second," "third," "fourth," and the like in the description and in the claims, as well as in the drawings, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The technical solution of the present invention will be described in detail below with specific examples. The following several specific embodiments may be combined with each other, and details of the same or similar concepts or processes may not be repeated in some embodiments.
As shown in fig. 1, the present invention provides a narrow discrete distance multi-frequency wave-absorbing structure, which includes:
a bottom metal ground plate 3;
the dielectric layer 2 is arranged on the bottom metal grounding plate 3;
at least one middle rectangular metal patch is embedded into the medium layer from bottom to top in sequence;
the top rectangular metal patch 1 is arranged on the dielectric layer 2;
the lengths of the middle rectangular metal patches embedded in the dielectric layer 2 are sequentially decreased from bottom to top, the length of the middle rectangular metal patch positioned at the bottommost layer is smaller than that of the bottom metal grounding plate 3, the length of the middle rectangular metal patch positioned at the topmost layer is larger than that of the top rectangular metal patch 1, and the length difference between the middle rectangular metal patch positioned at the bottommost layer and the top rectangular metal patch 1 is smaller than 10 microns.
The basic dielectric resonance unit of the narrow discrete distance multi-frequency wave-absorbing structure provided by the invention is composed of a metal-dielectric layer-metal grounding plate as shown in fig. 2, and specifically, the basic dielectric resonance unit is composed of a bottom layer metal grounding plate 3, a dielectric layer 2 and a top layer rectangular metal patch 1. The wave absorbing principle of such a basic dielectric resonance unit is as follows: when electromagnetic waves are incident to the surface of the metamaterial wave absorber, physical phenomena such as reflection, transmission, interference and the like can occur. Wherein less part of electromagnetic wave can be reflected to the air, and few part of electromagnetic wave can pass through the metamaterial wave absorber and transmit away, and more part of electromagnetic wave can incide the inside of metamaterial wave absorber, converts electromagnetic energy into other forms such as heat energy through the electromagnetic resonance that causes of surface metal resonance structure and the dielectric loss of dielectric layer to realize the absorption to incident electromagnetic wave. Through the reasonable shape, size and thickness of the surface metal structure of the metamaterial wave absorber, the electromagnetic characteristics of the metamaterial wave absorber can be regulated, so that the surface impedance of the metamaterial wave absorber is matched with the free space impedance in the air, reflection is reduced to the maximum extent, the maximum loss of incident electromagnetic waves is realized, and the near-perfect absorption effect is achieved.
For a basic dielectric resonant cell, the amplitude response diagram is shown in fig. 3, and fig. 3 shows that in the case that the thickness h of the dielectric layer is 2 μm, when a polarized electromagnetic wave is incident perpendicular to the structural cell, an absorption peak is generated in the reflection spectrum of the structure, wherein the absorption frequency is 2.2THz, and the amplitude is less than-10 dB. The magnetic field is distributed at the position of the insulating dielectric layer, the electric field is gradually enhanced from the middle to two sides along the edge of the top metal patch 1, and the wave absorbing effect of the wave absorber is mainly caused by magnetic resonance in the dielectric layer 2. I.e. when only one elementary dielectric resonant cell is present, the absorption frequency of this cell is only one.
In an embodiment of the present invention, as shown in fig. 1, a plurality of the basic dielectric resonance units are formed by embedding metal patches with different lengths in the dielectric layer 2: the middle rectangular metal patch positioned at the bottommost layer, the bottom metal grounding plate 3 and the medium layer in the middle of the bottom metal grounding plate; the middle rectangular metal patch positioned at the topmost layer, the top rectangular metal patch 1 and a medium layer in the middle of the top rectangular metal patch; and the adjacent middle rectangular metal patches and the middle dielectric layers thereof form the basic dielectric resonance unit, so that the high-efficiency wave absorption near a plurality of frequency points is realized.
The resonance frequency point of the basic medium resonance unit, namely the frequency point of the absorption wave, is mainly determined by the sizes of the top rectangular metal patch 1 and the middle rectangular metal patch embedded in the medium layer 2. The middle rectangular metal patch positioned at the bottommost layer, the bottom metal grounding plate 3 and the medium layer in the middle of the bottom metal grounding plate control low frequency points, and the top rectangular metal patch, the middle rectangular metal patch positioned at the topmost layer and the medium layer in the middle of the top rectangular metal patch control high frequency points, wherein the length of the top rectangular metal patch determines the peak frequency, and the longer the length is, the smaller the peak frequency is. Only under the condition that the lengths of the middle rectangular patches are sequentially decreased from bottom to top, the absorption frequency of the resonance structure formed from bottom to top can be sequentially increased, and then a plurality of absorption peaks can appear.
Because the sizes of the top rectangular metal patch 1 and the middle rectangular metal patch embedded in the dielectric layer 2 determine the frequency point of the absorption wave, wherein the thickness of the middle rectangular metal patch is very thin and is about 0.4 μm, in the embodiment of the invention, the length difference between the middle rectangular metal patch positioned at the bottommost layer and the top rectangular metal patch 1 is less than 10 μm, and the relative discrete distance of a plurality of absorption peaks can be ensured to be small.
In one embodiment, the vertical distance between the middle rectangular metal patch positioned at the bottommost layer and the bottom layer metal ground plate 3 is 1-3 μm; and/or: the vertical distance between adjacent middle rectangular metal patches is 1-3 μm; and/or: the vertical distance between the middle rectangular metal patch positioned at the topmost layer and the top rectangular metal patch 1 is 1-3 μm. The vertical distance is within 3 mu m, and the whole thickness of the wave-absorbing structure realized in the embodiment can be controlled to be very small.
The bottom layer metal grounding plate 3 is rectangular and 59-61 μm long; the length of the top layer rectangular metal patch 1 is 33-35 μm, and the width is 7-9 μm;
as shown in fig. 4, in a top view of the multi-frequency wave-absorbing structure in an embodiment of the present invention, a length p of the bottom metal ground plate 3 is 60 μm; the length a of the top rectangular metal patch 1 is 34 μm, and the width w is 8 μm.
In one embodiment, the dielectric layer 2 has a dielectric constant of 2.7 to 3.3 and a loss tangent of 0.001 to 0.003. The dielectric properties of a material are characterized primarily by the dielectric constant ∈ and the dielectric loss tangent tan δ, where the dielectric constant is a macroscopic physical quantity that comprehensively reflects the polarization behavior of a dielectric. The loss tangent, the dielectric loss tangent, characterizes the ratio of the energy lost to the energy stored in the dielectric in each cycle. In an embodiment of the present invention, the dielectric layer is an epoxy glass cloth laminated board (FR-4), and the dielectric layer 2 may also be another material satisfying a dielectric constant of 2.7 to 3.3 and a loss tangent of 0.001 to 0.003.
In one embodiment, the number of the middle rectangular metal patches embedded in the dielectric layer 2 is one. Referring to fig. 5, the length a of the top metal patch 1 is 34 μm; the length a1 of the middle rectangular metal patch 4 is 36 μm, and the length of the bottom metal ground plate 3 is 60 μm. The vertical distance t1 between the top rectangular metal patch 1 and the middle rectangular metal patch 4 is 1.2 μm; the vertical distance t2 between the middle rectangular metal patch 4 and the bottom layer metal ground plate 3 is 1.4 μm.
Referring to fig. 6, the structure realizes efficient absorption of electromagnetic waves near two frequency points, namely 2.02THz and 2.33THz, and obtains two absorption peaks with a discrete distance of only 0.31 THz. The peak frequency of the first absorption peak depends on the length a1 of the middle rectangular metal patch 4, the center frequency is 2.02THz, and the magnetic field is mainly concentrated in the dielectric layer between the middle rectangular metal patch 4 and the bottom layer metal ground plate 3. The peak frequency of the second absorption peak depends on the length a of the top rectangular metal patch 1, the center frequency is 2.33THz, and the magnetic field is mainly concentrated in the dielectric layer between the top rectangular metal patch 1 and the middle rectangular metal patch 4. Only if the length of the top rectangular metal patch 1 is smaller than that of the middle rectangular metal patch 4, the second peak frequency is ensured to be larger than the first peak frequency, and two absorption peaks with narrow discrete distance are realized.
In one embodiment, the number of the middle rectangular metal patches embedded in the dielectric layer 2 is two, please refer to fig. 7, where the length a of the top metal patch 1 is 34 μm; the length a2 of the first middle rectangular metal patch 5 is 36 μm, the length a3 of the second middle rectangular metal patch 6 is 39 μm, and the length of the bottom metallic ground plate 3 is 60 μm. The vertical distance t3 between the top rectangular metal patch 1 and the first middle rectangular metal patch 5 is 1.2 μm; the vertical distance t4 between the first middle rectangular metal patch 5 and the second middle rectangular metal patch 6 is 1.4 μm; the vertical distance t5 between the second middle rectangular metal patch 6 and the bottom layer metal ground plate 3 is 2 μm.
Referring to fig. 8, the structure realizes high-efficiency wave absorption near three frequency points of 1.986THz, 2.21THz and 2.46THz, and realizes narrow discrete distances of 0.224THz and 0.25THz in three absorption peaks. The peak frequency of the first absorption peak depends on the length a3 of the second middle rectangular metal patch 6, the center frequency is 1.986THz, and the magnetic field is mainly concentrated in the dielectric layer between the second middle rectangular metal patch 6 and the bottom metal ground plate 3. The peak frequency of the second absorption peak depends on the length a2 of the first middle rectangular metal patch 5, the center frequency is 2.21THz, and the magnetic field is mainly concentrated in the dielectric layer between the second middle rectangular metal patch 6 and the first middle rectangular metal patch 5. The peak frequency of the third absorption peak depends on the length a of the top rectangular metal patch 1, the center frequency is 2.46THz, and the magnetic field is mainly concentrated in the dielectric layer between the top rectangular metal patch 1 and the second middle rectangular metal patch 5. Because the lengths of the second middle rectangular metal patch 6, the first middle rectangular metal patch 5 and the top rectangular metal patch 1 are sequentially decreased and the corresponding absorption frequencies are sequentially increased, narrow discrete distances of 0.224THz and 0.25THz are realized in the three absorption peaks.
Therefore, the middle rectangular metal patches with different lengths are embedded in the dielectric layer, efficient wave absorption of a plurality of frequency points with small relative discrete distances is achieved, a large amount of information in a non-resonance absorption area is released, and the wave absorber in the embodiment of the invention is thin in the whole structure and can effectively improve the electromagnetic wave absorption rate.
Referring to fig. 9-10, as shown in fig. 9, the present invention provides a method for manufacturing a multi-frequency wave absorber unit, including:
s1, providing a bottom metal grounding plate 1;
s2, preparing a dielectric layer 2 on the bottom metal grounding plate, and embedding at least one middle rectangular metal patch in the dielectric layer 2; preparing a top rectangular metal patch 1 on the dielectric layer;
the lengths of the middle rectangular metal patches embedded in the dielectric layer 2 are sequentially decreased from bottom to top, the length of the middle rectangular metal patch positioned at the bottommost layer is smaller than that of the bottom metal grounding plate 3, and the length of the middle rectangular metal patch positioned at the topmost layer is larger than that of the top rectangular metal patch 1.
In one embodiment, as shown in fig. 10, in step S2, a dielectric layer 2 is prepared on the bottom metal ground plate 3, and at least one middle rectangular metal patch is embedded in the dielectric layer 2; the method specifically comprises the following steps:
s21, alternately preparing a first dielectric layer, a middle rectangular metal patch and a second dielectric layer on the bottom metal grounding plate 3; the middle rectangular metal patch is wrapped by the first dielectric layer and the second dielectric layer;
s22, preparing the top rectangular metal patch 1 on the second dielectric layer;
wherein the number of the middle rectangular metal patches is at least one.
In step S21, the dielectric layer 2 is prepared on the bottom metal ground plate 3, and at least one middle rectangular metal patch is embedded in the dielectric layer 2, except for the preparation method provided in this embodiment, other preparation methods may be adopted to realize the alternate stacking of the dielectric layer and the metal patch.
In summary, the preparation method of the multi-frequency wave absorber unit provided by the invention can realize the preparation of the multi-frequency wave absorbing structure and the wave absorbing device with narrow discrete distance. The preparation method has the advantages of simple processing, convenient realization and low economic cost.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A narrow discrete distance multi-frequency wave absorbing structure, comprising:
a bottom metal ground plate;
the dielectric layer is arranged on the bottom metal grounding plate;
at least one middle rectangular metal patch is embedded into the medium layer from bottom to top in sequence;
the top layer rectangular metal patch is arranged on the dielectric layer;
the lengths of the middle rectangular metal patches embedded in the medium layer are sequentially decreased from bottom to top, the length of the middle rectangular metal patch positioned at the bottommost layer is smaller than that of the bottom metal grounding plate, the length of the middle rectangular metal patch positioned at the topmost layer is larger than that of the top rectangular metal patch, and the length difference between the middle rectangular metal patch positioned at the bottommost layer and the top rectangular metal patch is smaller than 10 mu m.
2. The narrow discrete-distance multi-frequency microwave absorbing structure of claim 1 wherein the vertical distance between the middle rectangular metal patch at the bottom layer and the bottom metal ground plate is 1-3 μm; and/or: the vertical distance between adjacent middle rectangular metal patches is 1-3 μm; and/or: the vertical distance between the middle rectangular metal patch positioned at the topmost layer and the top rectangular metal patch is 1-3 μm.
3. The narrow discrete distance multi-frequency wave absorbing structure of claim 1 or 2 wherein the bottom metallic ground plate is rectangular in shape and 59-61 μm in length.
4. The narrow discrete-distance multi-frequency wave absorbing structure of claim 1 wherein the top rectangular metal patch has a length of 33-35 μm and a width of 7-9 μm.
5. The narrow discrete distance multi-frequency microwave absorbing structure of claim 1 wherein the dielectric layer has a dielectric constant of 2.7 to 3.3 and a loss tangent of 0.001 to 0.003.
6. The narrow discrete distance multi-frequency wave absorbing structure of claim 1 wherein the number of intermediate rectangular metal patches is one.
7. The narrow discrete distance multi-frequency wave absorbing structure of claim 1 wherein the number of intermediate rectangular metal patches is two.
8. A multi-frequency wave absorbing device with narrow discrete distance, comprising a wave absorber element according to any of claims 1-8.
9. A method for preparing a multi-frequency wave absorber unit is characterized by comprising the following steps:
providing a bottom metal grounding plate;
preparing a dielectric layer on the bottom metal grounding plate, and embedding at least one middle rectangular metal patch in the dielectric layer; and
preparing a top rectangular metal patch on the dielectric layer;
the lengths of the middle rectangular metal patches embedded in the medium layer are sequentially decreased from bottom to top, the length of the middle rectangular metal patch positioned at the bottommost layer is smaller than that of the bottom metal grounding plate, and the length of the middle rectangular metal patch positioned at the topmost layer is larger than that of the top rectangular metal patch.
10. The method for fabricating a multi-frequency wave absorber unit according to claim 9, wherein a dielectric layer is fabricated on the bottom metal ground plate, and at least one middle rectangular metal patch is embedded in the dielectric layer; the method specifically comprises the following steps:
alternately preparing a first dielectric layer, a middle rectangular metal patch and a second dielectric layer on the bottom metal grounding plate; the middle rectangular metal patch is wrapped by the first dielectric layer and the second dielectric layer;
preparing the top rectangular metal patch on the second dielectric layer;
wherein the number of the middle rectangular metal patches is at least one.
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