CN114388644B - High-heat-resistance solar cell and preparation method thereof - Google Patents
High-heat-resistance solar cell and preparation method thereof Download PDFInfo
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- CN114388644B CN114388644B CN202111501256.7A CN202111501256A CN114388644B CN 114388644 B CN114388644 B CN 114388644B CN 202111501256 A CN202111501256 A CN 202111501256A CN 114388644 B CN114388644 B CN 114388644B
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- 238000002360 preparation method Methods 0.000 title abstract description 16
- 239000002313 adhesive film Substances 0.000 claims abstract description 31
- 239000000203 mixture Substances 0.000 claims abstract description 21
- 239000003292 glue Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 13
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 8
- CVSXFBFIOUYODT-UHFFFAOYSA-N 178671-58-4 Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=C(C#N)C(=O)OCC(COC(=O)C(C#N)=C(C=1C=CC=CC=1)C=1C=CC=CC=1)(COC(=O)C(C#N)=C(C=1C=CC=CC=1)C=1C=CC=CC=1)COC(=O)C(C#N)=C(C=1C=CC=CC=1)C1=CC=CC=C1 CVSXFBFIOUYODT-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000002250 absorbent Substances 0.000 claims abstract description 4
- 230000002745 absorbent Effects 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 claims abstract description 3
- 238000004528 spin coating Methods 0.000 claims description 24
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 23
- 239000002245 particle Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- 239000004925 Acrylic resin Substances 0.000 claims description 15
- 229920000178 Acrylic resin Polymers 0.000 claims description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 15
- 239000004033 plastic Substances 0.000 claims description 14
- 229920003023 plastic Polymers 0.000 claims description 14
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 12
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 9
- 239000002243 precursor Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- KZDTZHQLABJVLE-UHFFFAOYSA-N 1,8-diiodooctane Chemical compound ICCCCCCCCI KZDTZHQLABJVLE-UHFFFAOYSA-N 0.000 claims description 6
- JTPNRXUCIXHOKM-UHFFFAOYSA-N 1-chloronaphthalene Chemical compound C1=CC=C2C(Cl)=CC=CC2=C1 JTPNRXUCIXHOKM-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 239000006185 dispersion Substances 0.000 claims description 6
- 229910021389 graphene Inorganic materials 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 239000004014 plasticizer Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- SIXWIUJQBBANGK-UHFFFAOYSA-N 4-(4-fluorophenyl)-1h-pyrazol-5-amine Chemical group N1N=CC(C=2C=CC(F)=CC=2)=C1N SIXWIUJQBBANGK-UHFFFAOYSA-N 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000003618 dip coating Methods 0.000 claims description 5
- 238000001125 extrusion Methods 0.000 claims description 5
- 238000005469 granulation Methods 0.000 claims description 5
- 230000003179 granulation Effects 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 5
- 238000009210 therapy by ultrasound Methods 0.000 claims description 5
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical group CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 4
- 239000006097 ultraviolet radiation absorber Substances 0.000 claims description 4
- 239000004952 Polyamide Substances 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 239000002671 adjuvant Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 1
- 238000010298 pulverizing process Methods 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 5
- 229920005575 poly(amic acid) Polymers 0.000 abstract description 4
- 230000032683 aging Effects 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- QGAVSDVURUSLQK-UHFFFAOYSA-N ammonium heptamolybdate Chemical compound N.N.N.N.N.N.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.[Mo].[Mo].[Mo].[Mo].[Mo].[Mo].[Mo] QGAVSDVURUSLQK-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229920002635 polyurethane Polymers 0.000 description 4
- 239000004814 polyurethane Substances 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/08—Macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J129/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Adhesives based on hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Adhesives based on derivatives of such polymers
- C09J129/14—Homopolymers or copolymers of acetals or ketals obtained by polymerisation of unsaturated acetals or ketals or by after-treatment of polymers of unsaturated alcohols
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/10—Adhesives in the form of films or foils without carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/322—Applications of adhesives in processes or use of adhesives in the form of films or foils for the production of solar panels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a high heat resistance solar cell and a preparation method thereof, belonging to the technical field of solar cells, wherein an auxiliary agent composition is added into a glue film of the high heat resistance solar cell, wherein polyamic acid has the characteristics of high temperature resistance and low temperature resistance at the same time, has toughening effect, improves the toughness of PVC, improves the dispersibility of raw materials of the glue film by matching with a silane coupling agent, can increase viscosity, increases the bonding degree of the glue film, a semiconductor layer and a cover plate, avoids the problems of shadow and the like in the production process of the solar cell, and avoids influencing the light transmittance of materials outside the semiconductor layer; pentaerythritol tetra (2-cyano-3, 3-diphenyl acrylate) is an ultraviolet absorbent with good light stability and heat stability, and can be uniformly dispersed in the adhesive film to increase the ageing resistance of the adhesive film and prevent cracks or color spots affecting the light transmission performance of the adhesive film after the adhesive film is used for a long time.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a high-heat-resistance solar cell and a preparation method thereof.
Background
The solar cell is a photoelectric semiconductor sheet which directly generates electricity by utilizing sunlight, is also called a solar chip or a photocell, and can output voltage instantly and generate current under the condition of a loop as long as the solar cell is subjected to illuminance meeting a certain illuminance condition. Physically, solar photovoltaic, simply referred to as photovoltaic.
Solar cells are generally arranged in groups and are installed in areas with good illumination, but natural conditions in the areas are often severe, such as the air temperature in gobi desert areas is high, the solar cells can age after long-time working, particularly, adhesive films in the solar cells can age to reduce light transmittance, and the efficiency of receiving light by a semiconductor layer is affected, so that the efficiency of converting light energy into electric energy is reduced. The service time of the solar cell can be prolonged by improving the performance of the adhesive film.
Disclosure of Invention
The invention aims to provide a solar cell with high heat resistance and a preparation method thereof, which are used for solving the problems in the background technology.
The aim of the invention can be achieved by the following technical scheme: the solar cell with high heat resistance comprises a back plate, a semiconductor layer, an adhesive film and a cover plate from the bottom layer to the outer layer in sequence;
Further, the adhesive film is prepared by the following steps:
Crushing PVB resin into particles with the diameter of 0.5-2cm, drying for 3-5 hours at the temperature of 45-50 ℃, mixing the dried PVB resin particles with the preheated auxiliary agent composition for 30-60 minutes by a high-speed mixer, and carrying out melt extrusion and granulation by a double-screw extruder to obtain PVB plastic particles; the preheating temperature of the auxiliary agent composition is 70-80 ℃; setting the temperature of a feeding section of the double-screw extruder to be 120-130 ℃, setting the temperature of a melting section to be 160-180 ℃ and setting the temperature of a die orifice to be 170-180 ℃;
preheating PVB plastic particles for 45-60min at 80-90 ℃, pressurizing and exhausting at 145-150 ℃ by a hot press forming machine, maintaining the pressure for 3-5min, molding the preheated PVB plastic particles into a film with the thickness of 0.4-1mm, and then pressing for 5-10min to obtain a glue film;
further, the auxiliary agent composition comprises a plasticizer, a high temperature resistant tackifier, a silane coupling agent and an ultraviolet absorber; wherein the plasticizer is diisooctyl phthalate, the high temperature resistant tackifier is polyamide acid, the silane coupling agent is vinyl trimethoxy silane or vinyl triethoxy silane, and the ultraviolet absorbent is pentaerythritol tetra (2-cyano-3, 3-diphenyl acrylate);
Further, the dosage ratio of the plasticizer, the high temperature resistant tackifier, the silane coupling agent and the ultraviolet absorber is 2-3g:1.2-2g:0.5-0.8g:1-1.5g; the ratio of PVB resin to adjuvant composition was 100g:3-3.5g;
further, the back plate is prepared by the steps of:
Washing ITO conductive glass with deionized water for 2-3 times, immersing in acetone, performing ultrasonic treatment for 30-45min, and drying at 45-50deg.C for 8-12h; spin-coating the precursor solution on the surface of the dried ITO conductive glass at 4200r/min, and then heat-treating for 10-15min at 180 ℃; continuously spin-coating graphene oxide dispersion liquid under the condition of 4200r/min after cooling, performing heat treatment at 180 ℃ for 10-15min, and spin-coating an active layer after cooling; the method for spin coating the active layer comprises the following steps: under the protection of nitrogen, spin-coating the solution A of the active layer for 45-60s at 2000r/min, heat-treating for 20min at 110-120 ℃, spin-coating the solution B of the active layer for 120-150s at 4000r/min, heat-treating for 30-45min at 75-80 ℃, and finally completing the preparation of the active layer film; coating an ITO conductive glass provided with an active layer film with a cathode interface layer BCP and a metal cathode Ag by a vacuum hot-dip coating mode to prepare a backboard;
Further, the precursor solution included ammonium heptamolybdate hydrate and deionized water in an amount ratio of 2.4g:1L; the active layer A solution comprises 1-chloronaphthalene and chloroform, and the dosage ratio of the 1-chloronaphthalene to the chloroform is 1.2g:1g; the active layer B solution comprises PTB7-Th, PC 71 BM powder, chlorobenzene and 1, 8-diiodooctane, the dosage ratio of PTB7-Th, PC 71 BM powder, chlorobenzene and 1, 8-diiodooctane being 4g:6g:97mL:3mL; the graphene oxide dispersion liquid is purchased from Shanghai Fu-furrow industry and trade limited company;
further, the semiconductor layer is a monocrystalline silicon wafer; the cover plate is made of high-light-transmittance glass;
the preparation method of the high heat resistance solar cell comprises the following steps:
Uniformly coating acrylic resin glue with the thickness of 200-300 mu m on one side of the backboard with the metal cathode, pasting monocrystalline silicon pieces, polishing the monocrystalline silicon pieces by using a polyurethane polishing pad, and flattening the surface of the pasted monocrystalline silicon pieces to finish the pasting procedure of the semiconductor layer;
And secondly, carrying out surface texturing treatment on the surface of the monocrystalline silicon wafer by using a sodium hydroxide solution with the mass fraction of 1% at the temperature of 70-80 ℃ to increase light reflection, adopting diffusion and knot making process treatment to form PN knots on the surface of the monocrystalline silicon wafer, uniformly coating a layer of acrylic resin glue with the thickness of 200-300 mu m, attaching a glue film, and attaching a cover plate on the outer side of the glue film by using the acrylic resin glue with the same thickness to obtain the high heat resistance solar cell.
The invention has the beneficial effects that: the adhesive film of the high heat resistance solar cell is added with the auxiliary agent composition, wherein the polyamide acid has the characteristics of high temperature resistance and low temperature resistance, has a toughening effect, improves the toughness of PVB, improves the dispersibility of each raw material of the adhesive film by matching with the silane coupling agent, can increase the viscosity, increases the bonding degree of the adhesive film, the semiconductor layer and the cover plate, avoids the problems of shadow and the like in the production process of the solar cell, and avoids influencing the light transmittance of materials outside the semiconductor layer; pentaerythritol tetra (2-cyano-3, 3-diphenyl acrylate) is an ultraviolet absorbent with good light stability and heat stability, and can be uniformly dispersed in the adhesive film to increase the ageing resistance of the adhesive film and prevent cracks or color spots affecting the light transmission performance of the adhesive film after the adhesive film is used for a long time.
The back plate of the high heat resistance solar cell has good electron conduction performance after being processed, the adhesive film has good high temperature resistance, the problems of shrinkage cracking and the like caused by high temperature are prevented, the high light transmittance is still maintained after long-time use, the performance of the solar cell is not influenced, and the durability application range of the solar cell is increased.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
The preparation method of the adhesive film comprises the following steps:
2g of diisooctyl phthalate, 1.2g of polyamic acid, 0.5g of vinyltrimethoxysilane and 1g of pentaerythritol tetrakis (2-cyano-3, 3-diphenylacrylate) are mixed by a high speed mixer to obtain an auxiliary composition, and the auxiliary composition is preheated at 70 ℃;
Setting the temperature of a feeding section of the double-screw extruder to be 120 ℃, setting the temperature of a melting section to be 160 ℃ and setting the temperature of a die orifice to be 170 ℃; crushing 100g of PVB resin into particles with the diameter of 0.5cm, drying at 45 ℃ for 3 hours, mixing the dried PVB resin particles with 3g of preheated auxiliary agent composition for 30 minutes by a high-speed mixer, and carrying out melt extrusion and granulation by a double-screw extruder to obtain PVB plastic particles;
Preheating PVB plastic particles for 45min at 80 ℃, pressurizing and exhausting at 145 ℃ by a hot press forming machine, maintaining the pressure for 3min, molding the preheated PVB plastic particles into a film with the thickness of 0.4mm, and then pressing for 5min to obtain the adhesive film.
Example 2
The preparation method of the adhesive film comprises the following steps:
2.5g of diisooctyl phthalate, 1.6g of polyamic acid, 0.6g of vinyltrimethoxysilane and 1.2g of pentaerythritol tetrakis (2-cyano-3, 3-diphenylacrylate) are mixed by a high speed mixer to obtain an auxiliary composition, and the auxiliary composition is preheated at 75 ℃;
Setting the temperature of a feeding section of the double-screw extruder to be 125 ℃, setting the temperature of a melting section to be 170 ℃ and setting the temperature of a die orifice to be 175 ℃; crushing 100gPVB resin into particles with the diameter of 1cm, drying for 4 hours at 48 ℃, mixing the dried PVB resin particles and the preheated auxiliary agent composition for 45 minutes by a high-speed mixer, and carrying out melt extrusion and granulation by a double-screw extruder to obtain PVB plastic particles;
Preheating PVB plastic particles for 50min at 85 ℃, pressurizing and exhausting at 150 ℃ by a hot press forming machine, maintaining the pressure for 4min, molding the preheated PVB plastic particles into a film with the thickness of 0.6mm, and then pressing for 8min to obtain the adhesive film.
Example 3
The preparation method of the adhesive film comprises the following steps:
3g of diisooctyl phthalate, 2g of polyamic acid, 0.8g of vinyltriethoxysilane and 1.5g of pentaerythritol tetrakis (2-cyano-3, 3-diphenylacrylate) are mixed by a high-speed mixer to obtain an auxiliary composition, and the auxiliary composition is preheated at 80 ℃;
Setting the temperature of a feeding section of the double-screw extruder to be 130 ℃, setting the temperature of a melting section to be 180 ℃ and setting the temperature of a die orifice to be 180 ℃; crushing 100g of PVB resin into particles with the diameter of 2cm, drying for 5 hours at 50 ℃, mixing the dried PVB resin particles with the preheated auxiliary agent composition for 60 minutes by a high-speed mixer, and carrying out melt extrusion and granulation by a double-screw extruder to obtain PVB plastic particles;
Preheating PVB plastic particles for 60min at 90 ℃, pressurizing and exhausting at 150 ℃ by a hot press forming machine, maintaining the pressure for 5min, molding the preheated PVB plastic particles into a film with the thickness of 1mm, and then pressing for 10min to obtain the adhesive film.
Example 4
The method for preparing the backboard comprises the following steps:
Ammonium heptamolybdate hydrate and deionized water were mixed at a rate of 2.4g:1L of a precursor solution is prepared according to the dosage ratio; 1-chloronaphthalene and chloroform were mixed in an amount of 1.2g:1g of active layer A solution is prepared; PTB7-Th, PC 71 BM powder, chlorobenzene and 1, 8-diiodooctane were mixed in an amount of 4g:6g:97mL:3mL of the active layer B solution is prepared in a dosage ratio;
Washing ITO conductive glass with deionized water for 2 times, immersing in acetone, performing ultrasonic treatment for 30min, and drying at 45 ℃ for 8h; spin-coating the precursor solution on the surface of the dried ITO conductive glass at 4200r/min, and then heat-treating for 10min at 180 ℃; continuously spin-coating graphene oxide dispersion liquid under the condition of 4200r/min after cooling, heat-treating for 10min under the condition of 180 ℃, spin-coating active layer A solution under the condition of 2000r/min for 45s under the protection of nitrogen after cooling, heat-treating for 20min under the condition of 110 ℃, spin-coating active layer B solution under the condition of 4000r/min for 120s, heat-treating for 30min under the condition of 75 ℃, and finally completing the preparation of an active layer film; and coating the ITO conductive glass provided with the active layer film with a cathode interface layer BCP and a metal cathode Ag in a vacuum hot-dip coating mode.
Example 5
Ammonium heptamolybdate hydrate and deionized water were mixed at a rate of 2.4g:1L of a precursor solution is prepared according to the dosage ratio; 1-chloronaphthalene and chloroform were mixed in an amount of 1.2g:1g of active layer A solution is prepared; PTB7-Th, PC 71 BM powder, chlorobenzene and 1, 8-diiodooctane were mixed in an amount of 4g:6g:97mL:3mL of the active layer B solution is prepared in a dosage ratio;
Washing ITO conductive glass with deionized water for 2 times, immersing in acetone, performing ultrasonic treatment for 40min, and drying at 45-50deg.C for 10h; spin-coating the precursor solution on the surface of the dried ITO conductive glass at 4200r/min, and then heat-treating for 12min at 180 ℃; continuously spin-coating graphene oxide dispersion liquid under the condition of 4200r/min after cooling, heat-treating for 12min under the condition of 180 ℃, spin-coating active layer A solution under the condition of 2000r/min for 50s under the protection of nitrogen after cooling, heat-treating for 20min under the condition of 115 ℃, spin-coating active layer B solution under the condition of 4000r/min for 130s, heat-treating for 40min under the condition of 78 ℃, and finally completing the preparation of an active layer film; and coating the ITO conductive glass provided with the active layer film with a cathode interface layer BCP and a metal cathode Ag in a vacuum hot-dip coating mode.
Example 6
Ammonium heptamolybdate hydrate and deionized water were mixed at a rate of 2.4g:1L of a precursor solution is prepared according to the dosage ratio; 1-chloronaphthalene and chloroform were mixed in an amount of 1.2g:1g of active layer A solution is prepared; PTB7-Th, PC 71 BM powder, chlorobenzene and 1, 8-diiodooctane were mixed in an amount of 4g:6g:97mL:3mL of the active layer B solution is prepared in a dosage ratio;
Washing ITO conductive glass with deionized water for 3 times, immersing in acetone, performing ultrasonic treatment for 45min, and drying at 50 ℃ for 12h; spin-coating the precursor solution on the surface of the dried ITO conductive glass at 4200r/min, and then heat-treating for 15min at 180 ℃; continuously spin-coating graphene oxide dispersion liquid under the condition of 4200r/min after cooling, heat-treating for 15min under the condition of 180 ℃, spin-coating active layer A solution under the condition of 2000r/min for 60s under the protection of nitrogen after cooling, heat-treating for 20min under the condition of 120 ℃, spin-coating active layer B solution for 150s under the condition of 4000r/min, heat-treating for 45min under the condition of 80 ℃, and finally completing the preparation of an active layer film; and coating the ITO conductive glass provided with the active layer film with a cathode interface layer BCP and a metal cathode Ag in a vacuum hot-dip coating mode.
Example 7
The preparation method of the high heat resistance solar cell comprises the following steps:
Uniformly coating acrylic resin glue with the thickness of 200 mu m on one side of the backboard with the metal cathode prepared in the embodiment 4, pasting a monocrystalline silicon wafer, polishing the monocrystalline silicon wafer with a polyurethane polishing pad, and flattening the surface of the pasted monocrystalline silicon wafer to finish the pasting procedure of the semiconductor layer;
And secondly, carrying out surface texturing treatment on the surface of the monocrystalline silicon wafer by using a sodium hydroxide solution with the mass fraction of 1% at the temperature of 70 ℃ so as to increase light reflection, uniformly coating a layer of acrylic resin adhesive with the thickness of 200 mu m after adopting diffusion and knot making process treatment, bonding the adhesive film prepared in the embodiment 1 with the monocrystalline silicon wafer, and bonding a cover plate on the outer side of the adhesive film by using the acrylic resin adhesive with the same thickness to obtain the high heat resistance solar cell.
Example 8
The preparation method of the high heat resistance solar cell comprises the following steps:
uniformly coating acrylic resin glue with the thickness of 250 mu m on one side of the backboard with the metal cathode prepared in the embodiment 5, pasting a monocrystalline silicon wafer, polishing the monocrystalline silicon wafer with a polyurethane polishing pad, and flattening the surface of the pasted monocrystalline silicon wafer to finish the pasting procedure of a semiconductor layer;
And secondly, carrying out surface texturing treatment on the surface of the monocrystalline silicon wafer by using a sodium hydroxide solution with the mass fraction of 1% at the temperature of 75 ℃ so as to increase light reflection, uniformly coating a layer of acrylic resin adhesive with the thickness of 250 mu m after adopting diffusion and knot making process treatment, bonding the adhesive film prepared in the embodiment 2 with the monocrystalline silicon wafer, and bonding a cover plate on the outer side of the adhesive film by using the acrylic resin adhesive with the same thickness so as to obtain the high heat resistance solar cell.
Example 9
The preparation method of the high heat resistance solar cell comprises the following steps:
uniformly coating acrylic resin glue with the thickness of 300 mu m on one side of the backboard with the metal cathode prepared in the embodiment 6, pasting a monocrystalline silicon wafer, polishing the monocrystalline silicon wafer with a polyurethane polishing pad, and flattening the surface of the pasted monocrystalline silicon wafer to finish the pasting procedure of a semiconductor layer;
And secondly, carrying out surface texturing treatment on the surface of the monocrystalline silicon wafer by using a sodium hydroxide solution with the mass fraction of 1% at the temperature of 80 ℃ so as to increase light reflection, uniformly coating a layer of acrylic resin adhesive with the thickness of 300 mu m after adopting diffusion and knot making process treatment, bonding the adhesive film prepared in the embodiment 3 with the monocrystalline silicon wafer, and bonding a cover plate on the outer side of the adhesive film by using the acrylic resin adhesive with the same thickness to obtain the high heat resistance solar cell.
Comparative example 1: based on example 1, a film was prepared without adding an auxiliary agent composition, and a solar cell was prepared according to the procedure of example 7.
Comparative example 2: on the basis of example 2, a film was prepared without adding an auxiliary agent composition, and a solar cell was prepared according to the procedure of example 8.
Comparative example 3: on the basis of example 3, a film was prepared without adding an auxiliary agent composition, and a solar cell was prepared according to the procedure of example 9.
The performance test was conducted on examples 7 to 9 and comparative examples 1 to 3, the solar cells produced in examples 7 to 9 and comparative examples 1 to 3 were irradiated with a xenon lamp at 60℃at 90℃and 120℃for 48 hours, respectively, and the results were observed and evaluated, and are shown in Table 1:
TABLE 1
As can be seen from table 1, the solar cells prepared in examples 7 to 9 still maintain good appearance under a high temperature environment of 120 ℃ and no abnormality occurs in the adhesive film.
It should be noted that in this document, terms such as "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (2)
1. A high heat resistance solar cell is characterized in that a back plate, a semiconductor layer, an adhesive film and a cover plate are sequentially arranged from a bottom layer to an outer layer; the adhesive film is prepared by the following steps:
Pulverizing PVB resin into particles with the diameter of 0.5-2cm, drying at 45-50 ℃ for 3-5h, mixing with the auxiliary agent composition preheated at 70-80 ℃ for 30-60min, and carrying out melt extrusion and granulation to obtain PVB plastic particles;
Preheating PVB plastic particles for 45-60min at 80-90 ℃, pressurizing and exhausting at 145-150 ℃ by a hot press forming machine, maintaining the pressure for 3-5min, molding into a film with the thickness of 0.4-1mm, and then pressing for 5-10min to obtain a glue film;
the auxiliary agent composition comprises a plasticizer, a high temperature resistant tackifier, a silane coupling agent and an ultraviolet absorber; the dosage ratio of the plasticizer, the high temperature resistant tackifier, the silane coupling agent and the ultraviolet absorber is 2-3g:1.2-2g:0.5-0.8g:1-1.5g;
The plasticizer is diisooctyl phthalate, the high temperature resistant tackifier is polyamide acid, the silane coupling agent is vinyl trimethoxy silane or vinyl triethoxy silane, and the ultraviolet absorbent is pentaerythritol tetra (2-cyano-3, 3-diphenyl acrylate);
The ratio of PVB resin to adjuvant composition was 100g:3-3.5g;
the backboard is prepared through the following steps:
Washing ITO conductive glass with deionized water for 2-3 times, immersing in acetone, performing ultrasonic treatment for 30-45min, and drying; spin-coating the precursor solution on the surface of the dried ITO conductive glass at 4200r/min, and performing heat treatment at 180 ℃ for 10-15min; spin-coating graphene oxide dispersion liquid under 4200r/min after cooling, heat-treating for 10-15min under 180 ℃, spin-coating an active layer after cooling to obtain an active film layer, and coating a cathode interface layer BCP and a metal cathode Ag on the active layer by a vacuum hot-dip coating mode to obtain a backboard;
1-chloronaphthalene and chloroform were mixed in an amount of 1.2g:1g of active layer A solution is prepared; PTB7-Th, PC 71 BM powder, chlorobenzene and 1, 8-diiodooctane were mixed in an amount of 4g:6g:97mL:3mL of the active layer B solution is prepared in a dosage ratio;
the method for spin coating the active layer comprises the following steps: under the protection of nitrogen, spin-coating the solution A of the active layer for 45-60s at 2000r/min, heat-treating for 20min at 110-120 ℃, spin-coating the solution B of the active layer for 120-150s at 4000r/min, and heat-treating for 30-45min at 75-80 ℃.
2. The method for manufacturing a high heat resistance solar cell according to claim 1, comprising the steps of:
uniformly coating acrylic resin glue with the thickness of 200-300 mu m on one side of the backboard with the metal cathode Ag, pasting monocrystalline silicon wafers, and polishing to finish the laminating process of the semiconductor layer;
And secondly, carrying out surface texturing treatment on the surface of the monocrystalline silicon wafer by using a sodium hydroxide solution with the mass fraction of 1% at the temperature of 70-80 ℃, then adopting a diffusion and knot making process to treat, uniformly coating a layer of acrylic resin glue with the thickness of 200-300 mu m, attaching a glue film, and attaching a cover plate on the outer side of the glue film by using the acrylic resin glue with the same thickness to obtain the high heat resistance solar cell.
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| CN111303782A (en) * | 2020-04-14 | 2020-06-19 | 杭州福斯特应用材料股份有限公司 | Packaging adhesive film for photovoltaic module and preparation method thereof |
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| CN103956431B (en) * | 2014-04-30 | 2017-10-20 | 华南理工大学 | A kind of organic-inorganic planar heterojunction solar cell of solution processing and its preparation |
| CN105206746A (en) * | 2015-09-23 | 2015-12-30 | 电子科技大学 | Organic thin-film solar cell based on ternary solvent system and preparing method thereof |
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| CN111303782A (en) * | 2020-04-14 | 2020-06-19 | 杭州福斯特应用材料股份有限公司 | Packaging adhesive film for photovoltaic module and preparation method thereof |
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