CN113921635A - High-strength moisture-resistant photovoltaic solar panel assembly and preparation method thereof - Google Patents
High-strength moisture-resistant photovoltaic solar panel assembly and preparation method thereof Download PDFInfo
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- CN113921635A CN113921635A CN202111177604.XA CN202111177604A CN113921635A CN 113921635 A CN113921635 A CN 113921635A CN 202111177604 A CN202111177604 A CN 202111177604A CN 113921635 A CN113921635 A CN 113921635A
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- solar panel
- solar cell
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 239000002313 adhesive film Substances 0.000 claims abstract description 44
- 239000000243 solution Substances 0.000 claims abstract description 40
- 239000005341 toughened glass Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 22
- RRKGBEPNZRCDAP-UHFFFAOYSA-N [C].[Ag] Chemical compound [C].[Ag] RRKGBEPNZRCDAP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 20
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 20
- 239000010432 diamond Substances 0.000 claims abstract description 20
- 238000004132 cross linking Methods 0.000 claims abstract description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 18
- 238000012360 testing method Methods 0.000 claims abstract description 18
- 239000002131 composite material Substances 0.000 claims abstract description 16
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000011259 mixed solution Substances 0.000 claims abstract description 16
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 15
- 229920002689 polyvinyl acetate Polymers 0.000 claims abstract description 15
- 239000011118 polyvinyl acetate Substances 0.000 claims abstract description 15
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000003963 antioxidant agent Substances 0.000 claims abstract description 13
- 230000003078 antioxidant effect Effects 0.000 claims abstract description 13
- 239000003063 flame retardant Substances 0.000 claims abstract description 13
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000001125 extrusion Methods 0.000 claims abstract description 8
- 238000005096 rolling process Methods 0.000 claims abstract description 8
- 238000010345 tape casting Methods 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 claims description 51
- 238000010438 heat treatment Methods 0.000 claims description 33
- 238000003756 stirring Methods 0.000 claims description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- 239000008367 deionised water Substances 0.000 claims description 28
- 229910021641 deionized water Inorganic materials 0.000 claims description 28
- 238000001035 drying Methods 0.000 claims description 26
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 24
- 238000001816 cooling Methods 0.000 claims description 24
- 239000003292 glue Substances 0.000 claims description 21
- 238000010030 laminating Methods 0.000 claims description 21
- 239000003999 initiator Substances 0.000 claims description 18
- 239000010410 layer Substances 0.000 claims description 15
- 239000002113 nanodiamond Substances 0.000 claims description 15
- 238000004140 cleaning Methods 0.000 claims description 14
- 238000000227 grinding Methods 0.000 claims description 14
- 239000002344 surface layer Substances 0.000 claims description 14
- 238000005406 washing Methods 0.000 claims description 14
- 238000005234 chemical deposition Methods 0.000 claims description 13
- 238000002791 soaking Methods 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 10
- 229940089951 perfluorooctyl triethoxysilane Drugs 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 239000000725 suspension Substances 0.000 claims description 10
- AVYKQOAMZCAHRG-UHFFFAOYSA-N triethoxy(3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F AVYKQOAMZCAHRG-UHFFFAOYSA-N 0.000 claims description 10
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 claims description 8
- HGXIBFSXZZKKRV-UHFFFAOYSA-N 2-hydroxypropane-1,2,3-tricarboxylic acid;silver;hydrate Chemical compound O.[Ag].[Ag].[Ag].OC(=O)CC(O)(C(O)=O)CC(O)=O HGXIBFSXZZKKRV-UHFFFAOYSA-N 0.000 claims description 8
- 239000004354 Hydroxyethyl cellulose Substances 0.000 claims description 8
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 claims description 8
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 8
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 claims description 8
- 238000007605 air drying Methods 0.000 claims description 7
- 235000012438 extruded product Nutrition 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 7
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 7
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N methyl pentane Natural products CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- ZKJRBWBAOPPIDO-UHFFFAOYSA-N 2-methylbutan-2-yloxy pentaneperoxoate Chemical compound CCCCC(=O)OOOC(C)(C)CC ZKJRBWBAOPPIDO-UHFFFAOYSA-N 0.000 claims description 4
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 4
- ZQMHJBXHRFJKOT-UHFFFAOYSA-N methyl 2-[(1-methoxy-2-methyl-1-oxopropan-2-yl)diazenyl]-2-methylpropanoate Chemical compound COC(=O)C(C)(C)N=NC(C)(C)C(=O)OC ZQMHJBXHRFJKOT-UHFFFAOYSA-N 0.000 claims description 4
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 4
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 230000000052 comparative effect Effects 0.000 description 9
- 230000002209 hydrophobic effect Effects 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- YEECOJZAMZEUBB-UHFFFAOYSA-N 2,2,3,3,6,6,7,7-octamethyloctane Chemical compound CC(C)(C)C(C)(C)CCC(C)(C)C(C)(C)C YEECOJZAMZEUBB-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a high-strength moisture-resistant photovoltaic solar panel component and a preparation method thereof. The preparation method mainly comprises the following steps: 1. reacting nano carbon-silver, an antioxidant, a flame retardant, a crosslinking curing agent, glycidyl methacrylate and polyethylene-polyvinyl acetate copolymer to prepare a composite EVA adhesive solution, and performing melt extrusion, tape casting, drafting and rolling on the composite EVA adhesive solution to prepare an EVA adhesive film; 2. etching a silicon wafer by using a mixed solution of nitric acid and hydrofluoric acid, depositing a diamond film on the surface by using a plasma method, and assembling to form a solar cell string; 3. the solar cell string is bonded with the toughened glass and the EVA adhesive film to form a solar cell panel; 4. the solar cell panel is additionally provided with an aluminum alloy frame, is connected into the junction box, and is subjected to EL electrical property test twice, and after the test is qualified, the photovoltaic solar panel assembly is manufactured. The photovoltaic solar panel component prepared by the invention has excellent mechanical strength and moisture resistance.
Description
Technical Field
The invention relates to the technical field of photovoltaic solar panels, in particular to a high-strength moisture-resistant photovoltaic solar panel assembly and a preparation method thereof.
Background
The operating environment of the photovoltaic solar panel assembly is outdoor and needs to be in contact with sunlight for a long time. The photovoltaic solar panel assembly is placed in an outdoor environment for a long time, is subjected to the influences of wind, rain, temperature difference, dust and the like for a long time, and is easy to have brittle cracks, after the photovoltaic solar panel assembly has cracks, water vapor enters the interior of the photovoltaic solar panel assembly, the solar cell string is affected with damp, an internal circuit is easy to cause after the photovoltaic solar panel assembly is affected with damp, and the exchange work of solar energy and electric energy cannot be normally carried out; in addition, after the solar panel is affected with damp, the strength of the solar panel is also reduced, and the service life of the photovoltaic solar panel component is directly shortened.
Therefore, the mechanical strength and the moisture resistance and humidity resistance of the photovoltaic solar panel component are improved, the service life of the photovoltaic solar panel component is prolonged, the replacement frequency of the photovoltaic solar panel component is reduced, and the service life of the photovoltaic solar panel component is prolonged.
Disclosure of Invention
The invention aims to provide a high-strength moisture-resistant photovoltaic solar panel assembly and a preparation method thereof, so as to solve the problems in the background technology.
In order to solve the technical problems, the invention provides the following technical scheme: a preparation method of a high-strength moisture-resistant photovoltaic solar panel component comprises the following steps:
(1) preparing an EVA adhesive film: s1, dissolving a citric acid trisilver hydrate in a mixed solution of deionized water and ethanol, uniformly stirring, adding hydroxyethyl cellulose, magnetically stirring to form a gel solution, drying to constant weight, roasting in a muffle furnace, grinding, dispersing in a perfluorooctyl triethoxysilane solution after grinding, uniformly stirring, filtering, washing, and drying to obtain nanocarbon-silver;
s2, dissolving glycidyl methacrylate in polyvinylpyrrolidone, adding an initiator, carrying out a heating reaction, adding a polyethylene-polyvinyl acetate copolymer, carrying out a heating reaction, cooling, adding an antioxidant, a flame retardant and nano carbon-silver, uniformly mixing, adding a crosslinking curing agent, and uniformly stirring to obtain a composite EVA glue solution;
s3, putting the obtained composite EVA glue solution into an internal mixer, carrying out melt extrusion, and carrying out tape casting, cooling, traction and rubber roller rolling on an extruded product to obtain an EVA glue film;
(2) preparing a solar cell string: cleaning a silicon wafer in deionized water, adding a mixed solution of nitric acid and hydrofluoric acid, heating to react, cleaning with deionized water, drying, and depositing a diamond film on the surface of the silicon wafer by adopting a plasma chemical deposition method; soaking in etching solution, washing twice with deionized water, and air drying to obtain pretreated silicon wafer; assembling the pretreated silicon wafers, and electrically connecting to form a solar cell string;
(3) preparing a photovoltaic solar panel: sequentially laying the EVA adhesive film prepared in the step (1) and the solar cell string prepared in the step (2) on the bottom layer toughened glass, and connecting the solar cell string into a whole by using a converging strip; continuously laying the EVA adhesive film and the surface layer toughened glass prepared in the step (1) on the surface of the solar cell string, placing the solar cell string in a laminator after laying, vacuumizing to the pressure of-1.0 MPa, and keeping for 30-50 min; vacuumizing the lower chamber of the laminating machine to-0.8 MPa and maintaining for 20-30min, and inflating the upper chamber of the laminating machine to-1.0 MPa and maintaining for 20-30 min; continuously vacuumizing the lower chamber of the laminating machine to-0.2 to-0.3 MPa, keeping the pressure of the upper chamber at-1.0 MPa in the process, and keeping for 40-50 min; heating to 135-145 ℃ to soften the EVA adhesive film and bond the EVA adhesive film with the bottom layer toughened glass, the solar cell string and the surface layer toughened glass together to obtain the photovoltaic solar panel;
(4) preparing a photovoltaic solar panel assembly: and (3) additionally arranging an aluminum alloy frame outside the photovoltaic solar panel, connecting the aluminum alloy frame into a junction box, carrying out EL electrical property test twice, and preparing the photovoltaic solar panel assembly after the test is qualified.
Further, the preparation method of the high-strength moisture-resistant photovoltaic solar panel component comprises the following steps:
(1) s1, dissolving citric acid tri-silver hydrate in a mixed solution of deionized water and ethanol, uniformly stirring, and dropwise adding NH3·H2Adjusting the pH value to 8.5-10.0 by O, adding hydroxyethyl cellulose, magnetically stirring to form a gel liquid, heating to 80-90 ℃, removing ethanol, drying to constant weight, placing in a muffle furnace, roasting at the temperature of 500-600 ℃ for 2-3h, grinding, dispersing in a perfluorooctyl triethoxysilane solution after grinding, uniformly stirring, filtering, washing and drying to obtain the nano carbon-silver;
s2, dissolving glycidyl methacrylate in polyvinylpyrrolidone, cooling to 0-10 ℃, adding an initiator, heating to 125 ℃ in the nitrogen atmosphere, reacting for 4-6h, adding a polyethylene-polyvinyl acetate copolymer, heating to 145 ℃ in 135 ℃ for reacting for 1-2h, vacuum dehydrating at a vacuum degree of-0.099-0.095 MPa, cooling to 60-70 ℃, adding an antioxidant, a flame retardant and nano carbon-silver, uniformly mixing, cooling to 20-25 ℃, adding a crosslinking curing agent, and uniformly stirring to obtain a composite EVA glue solution;
s3, putting the obtained composite EVA glue solution into an internal mixer, performing melt extrusion at the temperature of 120-150 ℃, and performing tape casting, cooling, traction and rubber roller rolling on an extruded product to obtain an EVA glue film;
(2) placing a silicon wafer in deionized water, cleaning for 3-5min, adding a mixed solution of nitric acid and hydrofluoric acid with a volume ratio of 3:1, heating to 80-90 ℃, reacting for 20-25min, cleaning with deionized water, drying, and depositing a diamond film on the surface of the silicon wafer by adopting a plasma chemical deposition method; soaking in etching solution for 2-3min, washing with deionized water twice, and air drying at 50-60 deg.C to obtain pretreated silicon wafer; assembling the pretreated silicon wafers, and electrically connecting to form a solar cell string;
(3) sequentially laying the EVA adhesive film prepared in the step (1) and the solar cell string prepared in the step (2) on the bottom layer toughened glass, and connecting the solar cell string into a whole by using a converging strip; continuously laying the EVA adhesive film and the surface layer toughened glass prepared in the step (1) on the surface of the solar cell string, placing the solar cell string in a laminator after laying, vacuumizing to the pressure of-1.0 MPa, and keeping for 30-50 min; vacuumizing the lower chamber of the laminating machine to-0.8 MPa and maintaining for 20-30min, and inflating the upper chamber of the laminating machine to-1.0 MPa and maintaining for 20-30 min; continuously vacuumizing the lower chamber of the laminating machine to-0.2 to-0.3 MPa, keeping the pressure of the upper chamber at-1.0 MPa in the process, and keeping for 40-50 min; heating to 135-145 ℃ to soften the EVA adhesive film and bond the EVA adhesive film with the bottom layer toughened glass, the solar cell string and the surface layer toughened glass together to obtain the photovoltaic solar panel;
and multiple times of vacuumizing operation is performed, so that the air tightness between the solar cell and the toughened glass is improved, and the entering of environmental water vapor is strictly prevented.
(4) Preparing a photovoltaic solar panel assembly: and (3) additionally arranging an aluminum alloy frame outside the photovoltaic solar panel, connecting the aluminum alloy frame into a junction box, carrying out EL electrical property test twice, and preparing the photovoltaic solar panel assembly after the test is qualified.
Further, the EVA adhesive film comprises, by weight, 75-85 parts of polyethylene-polyvinyl acetate copolymer, 17-23 parts of glycidyl methacrylate, 21-25 parts of nano carbon-silver, 2-5 parts of an initiator, 2-5 parts of a crosslinking curing agent, 1-3 parts of an antioxidant and 0.5-0.7 part of a flame retardant.
Further, the initiator is any one of azobisisobutyronitrile, potassium persulfate, ammonium persulfate and dimethyl azobisisobutyrate.
Further, the crosslinking curing agent is any one or more of cumyl peroxide, 2, 5-dimethyl-2, 5-di-tert-butyl hexane peroxide and n-butyl 4, 4-di (tert-amyl peroxy) valerate.
Further, the step (2) of depositing the diamond film on the surface of the silicon wafer by adopting a plasma chemical deposition method comprises the following steps;
dispersing the nano-diamond micro-powder in an acetone solution, and magnetically stirring to obtain a nano-diamond suspension; soaking the silicon wafer in the nano-diamond suspension, ultrasonically oscillating for 5-10min, drying, placing in a plasma deposition device, respectively introducing hydrogen, argon and methane, introducing 5KPa under the pressure of 75 KPa under the current of 850 ℃, depositing for 40-50min, and obtaining the silicon wafer with the surface deposited with the compact diamond film.
The high-strength moisture-resistant photovoltaic solar panel component prepared by the preparation method.
Compared with the prior art, the invention has the following beneficial effects: the invention provides a preparation method of a high-strength moisture-resistant photovoltaic solar panel component.
When the EVA adhesive film is prepared, a hydrophobic monomer glycidyl methacrylate is copolymerized under the action of an initiator to form hydrophobic resin, so that the EVA adhesive film is endowed with good hydrophobicity and moisture resistance; and further reacting with the polyethylene-polyvinyl acetate copolymer, and polymerizing a small amount of residual glycidyl methacrylate monomer in the system with the polyethylene-polyvinyl acetate copolymer, so that the length and the crosslinking degree of a molecular chain are increased, and the mechanical strength and the hydrophobic moisture resistance of the photovoltaic solar panel component are improved. In addition, the EVA adhesive film is also added with nano carbon-silver, the nano carbon-silver adopts citric acid tri-silver hydrate and hydroxyethyl cellulose to form a cross-linked network structure, and is prepared by high-temperature roasting and modification of a perfluoro octyl triethoxysilane solution, and the nano carbon-silver surface has stronger hydrophobicity; therefore, the prepared EVA adhesive film has stronger hydrophobicity and excellent moisture-proof and damp-proof capabilities.
In the process of preparing the solar cell string, the mixed solution of nitric acid and hydrofluoric acid is used for texturing the silicon wafer, a wormhole-shaped textured structure is formed on the surface of the silicon wafer, the flame light effect of the silicon wafer is improved, a layer of compact diamond film can be deposited on the surface of the silicon wafer by utilizing plasma chemical deposition, the hardness of the diamond film is high, the mechanical strength of a photovoltaic solar panel component can be improved on one hand, and the silicon wafer can be protected from being corroded on the other hand.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
A preparation method of a high-strength moisture-resistant photovoltaic solar panel component comprises the following steps;
(1) s1, dissolving citric acid tri-silver hydrate in a mixed solution of deionized water and ethanol, uniformly stirring, and dropwise adding NH3·H2Adjusting the pH value to 8.5 by using O, adding hydroxyethyl cellulose, magnetically stirring to form a gel liquid, heating to 80 ℃, removing ethanol, drying to constant weight, placing in a muffle furnace, roasting at 500 ℃ for 2 hours, grinding, dispersing in a perfluorooctyl triethoxysilane solution after grinding, uniformly stirring, filtering, washing, and drying to obtain nanocarbon-silver;
s2, dissolving glycidyl methacrylate in polyvinylpyrrolidone, cooling to 5 ℃, adding an initiator, heating to 115 ℃ under the nitrogen atmosphere, reacting for 4 hours, adding a polyethylene-polyvinyl acetate copolymer, heating to 135 ℃, reacting for 1 hour, performing vacuum dehydration, cooling to 60 ℃, adding an antioxidant, a flame retardant and nano carbon-silver, uniformly mixing, cooling to 20 ℃, adding a crosslinking curing agent, and uniformly stirring to obtain a composite EVA glue solution;
s3, putting the obtained composite EVA glue solution into an internal mixer, performing melt extrusion at the temperature of 120 ℃, and performing tape casting, cooling, traction and rubber roller rolling on an extruded product to obtain an EVA glue film;
(2) placing a silicon wafer in deionized water, cleaning for 3min, adding a mixed solution of nitric acid and hydrofluoric acid in a volume ratio of 3:1, heating to 80 ℃, reacting for 20min, cleaning with deionized water, drying, and depositing a diamond film on the surface of the silicon wafer by adopting a plasma chemical deposition method; placing the silicon wafer into an etching solution, soaking for 2min, washing twice with deionized water, and air-drying at 50 ℃ to obtain a pretreated silicon wafer; assembling the pretreated silicon wafers, and electrically connecting to form a solar cell string;
(3) sequentially laying the EVA adhesive film prepared in the step (1) and the solar cell string prepared in the step (2) on the bottom layer toughened glass, and connecting the solar cell string into a whole by using a converging strip; continuously laying the EVA adhesive film and the surface layer toughened glass prepared in the step (1) on the surface of the solar cell string, placing the solar cell string in a laminator after laying, vacuumizing to the pressure of-1.0 MPa, and keeping for 30-50 min; vacuumizing the lower chamber of the laminating machine to the pressure of-0.8 MPa, and keeping for 20min, and inflating the upper chamber of the laminating machine to the pressure of-1.0 MPa, and keeping for 20 min; continuously vacuumizing the lower chamber of the laminating machine to-0.2 MPa, keeping the pressure of the upper chamber at-1.0 MPa in the process, and keeping for 40 min; heating to 135 ℃, so that the EVA adhesive film is softened and bonded with the bottom layer toughened glass, the solar cell string and the surface layer toughened glass to obtain the photovoltaic solar panel;
(4) preparing a photovoltaic solar panel assembly: and (3) additionally arranging an aluminum alloy frame outside the photovoltaic solar panel, connecting the aluminum alloy frame into a junction box, carrying out EL electrical property test twice, and preparing the photovoltaic solar panel assembly after the test is qualified.
The EVA adhesive film in the embodiment comprises the following raw materials, by weight, 75 parts of polyethylene-polyvinyl acetate copolymer, 17 parts of glycidyl methacrylate, 21 parts of nano carbon-silver, 2 parts of an initiator, 2 parts of a crosslinking curing agent, 1 part of an antioxidant and 0.5 part of a flame retardant.
In the invention, the initiator is azobisisobutyronitrile; the crosslinking curing agent in the invention is cumyl peroxide.
In the invention, the step (2) adopts a plasma chemical deposition method to deposit the diamond film on the surface of the silicon wafer, and comprises the following steps; dispersing the nano-diamond micro-powder in an acetone solution, and magnetically stirring to obtain a nano-diamond suspension; soaking the silicon wafer in the nano-diamond suspension, ultrasonically oscillating for 5min, drying, placing in a plasma deposition device, respectively introducing hydrogen, argon and methane, introducing 5KPa pressure and 75A current, keeping the temperature at 850 ℃, and depositing for 40min to obtain the silicon wafer with the surface deposited with the compact diamond film.
Example 2
A preparation method of a high-strength moisture-resistant photovoltaic solar panel component comprises the following steps;
(1) s1, dissolving citric acid tri-silver hydrate in a mixed solution of deionized water and ethanol, uniformly stirring, and dropwise adding NH3·H2Adjusting the pH value to 9.2, adding hydroxyethyl cellulose, magnetically stirring to form a gel liquid, heating to 87 ℃, removing ethanol, drying to constant weight, placing in a muffle furnace, roasting at 570 ℃ for 2.5h, grinding, dispersing in a perfluorooctyl triethoxysilane solution after grinding, uniformly stirring, filtering, washing, and drying to obtain nanocarbon-silver;
s2, dissolving glycidyl methacrylate in polyvinylpyrrolidone, cooling to 8 ℃, adding an initiator, heating to 120 ℃ under the nitrogen atmosphere, reacting for 5 hours, adding a polyethylene-polyvinyl acetate copolymer, heating to 140 ℃, reacting for 1.5 hours, performing vacuum dehydration, cooling to 65 ℃, adding an antioxidant, a flame retardant and nano carbon-silver, uniformly mixing, cooling to 23 ℃, adding a crosslinking curing agent, and uniformly stirring to obtain a composite EVA glue solution;
s3, putting the obtained composite EVA glue solution into an internal mixer, performing melt extrusion at the temperature of 137 ℃, and performing tape casting, cooling, traction and rubber roller rolling on an extruded product to obtain an EVA glue film;
(2) placing a silicon wafer in deionized water, cleaning for 4min, adding a mixed solution of nitric acid and hydrofluoric acid in a volume ratio of 3:1, heating to 83 ℃ for reaction for 22min, cleaning with deionized water, drying, and depositing a diamond film on the surface of the silicon wafer by adopting a plasma chemical deposition method; placing the silicon wafer into an etching solution, soaking for 2.5min, washing twice with deionized water, and air-drying at the temperature of 55 ℃ to obtain a pretreated silicon wafer; assembling the pretreated silicon wafers, and electrically connecting to form a solar cell string;
(3) sequentially laying the EVA adhesive film prepared in the step (1) and the solar cell string prepared in the step (2) on the bottom layer toughened glass, and connecting the solar cell string into a whole by using a converging strip; continuously laying the EVA adhesive film and the surface layer toughened glass prepared in the step (1) on the surface of the solar cell string, placing the solar cell string in a laminator after laying, vacuumizing to the pressure of-1.0 MPa, and keeping for 40 min; vacuumizing the lower chamber of the laminating machine to the pressure of-0.8 MPa, and keeping for 24min, and inflating the upper chamber of the laminating machine to the pressure of-1.0 MPa, and keeping for 25 min; continuously vacuumizing the lower chamber of the laminating machine to-0.25 MPa, keeping the pressure of the upper chamber at-1.0 MPa in the process, and keeping for 45 min; heating to 1405 ℃, so that the EVA adhesive film is softened and bonded with the bottom layer toughened glass, the solar cell string and the surface layer toughened glass to obtain the photovoltaic solar panel;
(4) preparing a photovoltaic solar panel assembly: and (3) additionally arranging an aluminum alloy frame outside the photovoltaic solar panel, connecting the aluminum alloy frame into a junction box, carrying out EL electrical property test twice, and preparing the photovoltaic solar panel assembly after the test is qualified.
The EVA adhesive film in the embodiment comprises the following raw materials, by weight, 80 parts of polyethylene-polyvinyl acetate copolymer, 21 parts of glycidyl methacrylate, 22 parts of nano carbon-silver, 4 parts of an initiator, 4 parts of a crosslinking curing agent, 2 parts of an antioxidant and 0.6 part of a flame retardant.
The initiator is any one of azodiisobutyronitrile, potassium persulfate, ammonium persulfate and dimethyl azodiisobutyrate.
The crosslinking curing agent in the invention is any one or more of cumyl peroxide, 2, 5-dimethyl-2, 5-di-tert-butyl peroxy hexane and n-butyl 4, 4-di (tert-amyl peroxy) valerate.
In the invention, the step (2) adopts a plasma chemical deposition method to deposit the diamond film on the surface of the silicon wafer, and comprises the following steps;
dispersing the nano-diamond micro-powder in an acetone solution, and magnetically stirring to obtain a nano-diamond suspension; soaking the silicon wafer in the nano-diamond suspension, ultrasonically oscillating for 7min, drying, placing in a plasma deposition device, respectively introducing hydrogen, argon and methane, introducing 5KPa pressure and 75A current, keeping the temperature at 850 ℃, and depositing for 45min to obtain the silicon wafer with the surface deposited with the compact diamond film.
Example 3
A preparation method of a high-strength moisture-resistant photovoltaic solar panel component comprises the following steps;
(1) s1, dissolving citric acid tri-silver hydrate in a mixed solution of deionized water and ethanol, uniformly stirring, and dropwise adding NH3·H2Adjusting the pH value to 10.0 by using O, adding hydroxyethyl cellulose, magnetically stirring to form a gel liquid, heating to 90 ℃, removing ethanol, drying to constant weight, placing in a muffle furnace, roasting at the temperature of 600 ℃ for 3 hours, grinding, dispersing in a perfluorooctyl triethoxysilane solution after grinding, uniformly stirring, filtering, washing, and drying to obtain nanocarbon-silver;
s2, dissolving glycidyl methacrylate in polyvinylpyrrolidone, cooling to 10 ℃, adding an initiator, heating to 125 ℃ under the nitrogen atmosphere, reacting for 6 hours, adding a polyethylene-polyvinyl acetate copolymer, heating to 145 ℃, reacting for 2 hours, performing vacuum dehydration, cooling to 70 ℃, adding an antioxidant, a flame retardant and nano carbon-silver, uniformly mixing, cooling to 25 ℃, adding a crosslinking curing agent, and uniformly stirring to obtain a composite EVA glue solution;
s3, putting the obtained composite EVA glue solution into an internal mixer, performing melt extrusion at the temperature of 150 ℃, and performing tape casting, cooling, traction and rubber roller rolling on an extruded product to obtain an EVA glue film;
(2) placing a silicon wafer in deionized water, cleaning for 5min, adding a mixed solution of nitric acid and hydrofluoric acid in a volume ratio of 3:1, heating to 90 ℃, reacting for 25min, cleaning with deionized water, drying, and depositing a diamond film on the surface of the silicon wafer by adopting a plasma chemical deposition method; placing the silicon wafer into etching liquid, soaking for 3min, washing twice with deionized water, and air-drying at 60 ℃ to obtain a pretreated silicon wafer; assembling the pretreated silicon wafers, and electrically connecting to form a solar cell string;
(3) sequentially laying the EVA adhesive film prepared in the step (1) and the solar cell string prepared in the step (2) on the bottom layer toughened glass, and connecting the solar cell string into a whole by using a converging strip; continuously laying the EVA adhesive film and the surface layer toughened glass prepared in the step (1) on the surface of the solar cell string, placing the solar cell string in a laminator after laying, vacuumizing to the pressure of-1.0 MPa, and keeping for 50 min; vacuumizing the lower chamber of the laminating machine to the pressure of-0.8 MPa, and keeping for 30min, and inflating the upper chamber of the laminating machine to the pressure of-1.0 MPa, and keeping for 30 min; continuously vacuumizing the lower chamber of the laminating machine to-0.3 MPa, keeping the pressure of the upper chamber at-1.0 MPa in the process, and keeping for 50 min; heating to 145 ℃, so that the EVA adhesive film is softened and bonded with the bottom layer toughened glass, the solar cell string and the surface layer toughened glass to obtain the photovoltaic solar panel;
(4) preparing a photovoltaic solar panel assembly: and (3) additionally arranging an aluminum alloy frame outside the photovoltaic solar panel, connecting the aluminum alloy frame into a junction box, carrying out EL electrical property test twice, and preparing the photovoltaic solar panel assembly after the test is qualified.
The EVA adhesive film in the embodiment comprises the following raw materials, by weight, 85 parts of polyethylene-polyvinyl acetate copolymer, 23 parts of glycidyl methacrylate, 25 parts of nano carbon-silver, 5 parts of an initiator, 5 parts of a crosslinking curing agent, 3 parts of an antioxidant and 0.7 part of a flame retardant.
The initiator is any one of azodiisobutyronitrile, potassium persulfate, ammonium persulfate and dimethyl azodiisobutyrate.
The crosslinking curing agent in the invention is any one or more of cumyl peroxide, 2, 5-dimethyl-2, 5-di-tert-butyl peroxy hexane and n-butyl 4, 4-di (tert-amyl peroxy) valerate.
In the invention, the step (2) adopts a plasma chemical deposition method to deposit the diamond film on the surface of the silicon wafer, and comprises the following steps; dispersing the nano-diamond micro-powder in an acetone solution, and magnetically stirring to obtain a nano-diamond suspension; soaking the silicon wafer in the nano-diamond suspension, ultrasonically oscillating for 10min, drying, placing in a plasma deposition device, respectively introducing hydrogen, argon and methane, introducing 5KPa pressure and 75A current, keeping the temperature at 850 ℃, and depositing for 50min to obtain the silicon wafer with the surface deposited with the compact diamond film.
Comparative example 1
In the preparation of the EVA adhesive film, glycidyl methacrylate is not added, and the rest is the same as that in example 3.
Comparative example 2
Compared with the example 3, the nano carbon-silver particles are not treated by the perfluorooctyl triethoxysilane solution in the EVA adhesive film preparation process, and the rest is the same as the example 3.
Comparative example 3
Compared with the example 3, the nano carbon-silver particles are not added in the process of preparing the EVA adhesive film, and the rest is the same as the example 3.
Examples of effects
Taking the EVA films prepared in the examples 1-3 and the comparative examples 1-3 and the photovoltaic solar panel component, performing performance test, and testing the hydrophobicity of the photovoltaic solar panel component according to a TAPPI T558 measurement contact angle method; the test results are shown in table 1 below:
| contact angle ° | Light transmittance% | Tensile strength of EVA film, MPa | |
| Example 1 | 150 | 97.7 | 95 |
| Example 2 | 152 | 97.9 | 95 |
| Example 3 | 155 | 98.0 | 97 |
| Comparative example 1 | 137 | 97.4 | 92 |
| Comparative example 2 | 140 | 97.5 | 96 |
| Comparative example 3 | 129 | 97.7 | 83 |
TABLE 1
As can be seen from the data in Table 1, the photovoltaic solar panel component prepared by the method has good light transmittance, a contact angle of 150 degrees or more, strong hydrophobicity and excellent moisture resistance and humidity resistance. The EVA adhesive film prepared by the invention has high tensile strength, and can be bonded with a solar cell string and toughened glass together to improve the mechanical strength of a photovoltaic solar panel component.
In the process of preparing the EVA adhesive film in the comparative example 1, the hydrophobic monomer is not added, the contact angle of the finally prepared photovoltaic solar panel component is smaller than that of the photovoltaic solar panel component in the example 3, the hydrophobicity is poor, and the moisture resistance of the photovoltaic solar panel component is weak.
Comparative example 2 compared with example 3, the nanocarbon-silver was not treated with the perfluorooctyltriethoxysilane solution, the contact angle was reduced, and the moisture resistance was weak; compared with example 3, the EVA adhesive film prepared by the method has the advantages that the nano carbon-silver is not added, so that the contact angle and the mechanical strength are reduced, and the mechanical strength and the moisture resistance of the photovoltaic solar panel module are lower than those of example 3.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A preparation method of a high-strength moisture-resistant photovoltaic solar panel component is characterized by comprising the following steps: the method comprises the following steps:
(1) preparing an EVA adhesive film:
s1, dissolving a citric acid trisilver hydrate in a mixed solution of deionized water and ethanol, uniformly stirring, adding hydroxyethyl cellulose, magnetically stirring to form a gel solution, drying to constant weight, roasting in a muffle furnace, grinding, dispersing in a perfluorooctyl triethoxysilane solution after grinding, uniformly stirring, filtering, washing, and drying to obtain nanocarbon-silver;
s2, dissolving glycidyl methacrylate in polyvinylpyrrolidone, adding an initiator, carrying out a heating reaction, adding a polyethylene-polyvinyl acetate copolymer, carrying out a heating reaction, cooling, adding an antioxidant, a flame retardant and nano carbon-silver, uniformly mixing, adding a crosslinking curing agent, and uniformly stirring to obtain a composite EVA glue solution;
s3, putting the obtained composite EVA glue solution into an internal mixer, carrying out melt extrusion, and carrying out tape casting, cooling, traction and rubber roller rolling on an extruded product to obtain an EVA glue film;
(2) preparing a solar cell string:
cleaning a silicon wafer in deionized water, adding a mixed solution of nitric acid and hydrofluoric acid, heating to react, cleaning with deionized water, drying, and depositing a diamond film on the surface of the silicon wafer by adopting a plasma chemical deposition method; soaking in etching solution, washing twice with deionized water, and air drying to obtain pretreated silicon wafer; assembling the pretreated silicon wafers, and electrically connecting to form a solar cell string;
(3) preparing a photovoltaic solar panel:
sequentially laying the EVA adhesive film prepared in the step (1) and the solar cell string prepared in the step (2) on the bottom layer toughened glass, and connecting the solar cell string into a whole by using a converging strip; continuously laying the EVA adhesive film and the surface layer toughened glass prepared in the step (1) on the surface of the solar cell string, placing the solar cell string in a laminator after laying, vacuumizing to the pressure of-1.0 MPa, and keeping for 30-50 min; vacuumizing the lower chamber of the laminating machine to-0.8 MPa and maintaining for 20-30min, and inflating the upper chamber of the laminating machine to-1.0 MPa and maintaining for 20-30 min; continuously vacuumizing the lower chamber of the laminating machine to-0.2 to-0.3 MPa, keeping the pressure of the upper chamber at-1.0 MPa in the process, and keeping for 40-50 min; heating to 135-145 ℃ to soften the EVA adhesive film and bond the EVA adhesive film with the bottom layer toughened glass, the solar cell string and the surface layer toughened glass together to obtain the photovoltaic solar panel;
(4) preparing a photovoltaic solar panel assembly: and (3) additionally arranging an aluminum alloy frame outside the photovoltaic solar panel, connecting the aluminum alloy frame into a junction box, carrying out EL electrical property test twice, and preparing the photovoltaic solar panel assembly after the test is qualified.
2. The method of claim 1, wherein the method comprises the steps of: the method comprises the following steps:
(1) s1, dissolving citric acid tri-silver hydrate in a mixed solution of deionized water and ethanol, uniformly stirring, and dropwise adding NH3·H2Adjusting the pH value to 8.5-10.0 by O, adding hydroxyethyl cellulose, magnetically stirring to form a gel liquid, heating to 80-90 ℃, removing ethanol, drying to constant weight, placing in a muffle furnace, roasting at the temperature of 500-600 ℃ for 2-3h, grinding, dispersing in a perfluorooctyl triethoxysilane solution after grinding, uniformly stirring, filtering, washing and drying to obtain the nano carbon-silver;
s2, dissolving glycidyl methacrylate in polyvinylpyrrolidone, cooling to 0-10 ℃, adding an initiator, heating to 125 ℃ in the nitrogen atmosphere, reacting for 4-6h, adding a polyethylene-polyvinyl acetate copolymer, heating to 145 ℃ in 135 ℃ for reacting for 1-2h, vacuum dehydrating at a vacuum degree of-0.099-0.095 MPa, cooling to 60-70 ℃, adding an antioxidant, a flame retardant and nano carbon-silver, uniformly mixing, cooling to 20-25 ℃, adding a crosslinking curing agent, and uniformly stirring to obtain a composite EVA glue solution;
s3, putting the obtained composite EVA glue solution into an internal mixer, performing melt extrusion at the temperature of 120-150 ℃, and performing tape casting, cooling, traction and rubber roller rolling on an extruded product to obtain an EVA glue film;
(2) placing a silicon wafer in deionized water, cleaning for 3-5min, adding a mixed solution of nitric acid and hydrofluoric acid with a volume ratio of 3:1, heating to 80-90 ℃, reacting for 20-25min, cleaning with deionized water, drying, and depositing a diamond film on the surface of the silicon wafer by adopting a plasma chemical deposition method; soaking in etching solution for 2-3min, washing with deionized water twice, and air drying at 50-60 deg.C to obtain pretreated silicon wafer; assembling the pretreated silicon wafers, and electrically connecting to form a solar cell string;
(3) sequentially laying the EVA adhesive film prepared in the step (1) and the solar cell string prepared in the step (2) on the bottom layer toughened glass, and connecting the solar cell string into a whole by using a converging strip; continuously laying the EVA adhesive film and the surface layer toughened glass prepared in the step (1) on the surface of the solar cell string, placing the solar cell string in a laminator after laying, vacuumizing to the pressure of-1.0 MPa, and keeping for 30-50 min; vacuumizing the lower chamber of the laminating machine to-0.8 MPa and maintaining for 20-30min, and inflating the upper chamber of the laminating machine to-1.0 MPa and maintaining for 20-30 min; continuously vacuumizing the lower chamber of the laminating machine to-0.2 to-0.3 MPa, keeping the pressure of the upper chamber at-1.0 MPa in the process, and keeping for 40-50 min; heating to 135-145 ℃ to soften the EVA adhesive film and bond the EVA adhesive film with the bottom layer toughened glass, the solar cell string and the surface layer toughened glass together to obtain the photovoltaic solar panel;
(4) preparing a photovoltaic solar panel assembly: and (3) additionally arranging an aluminum alloy frame outside the photovoltaic solar panel, connecting the aluminum alloy frame into a junction box, carrying out EL electrical property test twice, and preparing the photovoltaic solar panel assembly after the test is qualified.
3. The method of claim 2, wherein the step of preparing the high strength moisture resistant photovoltaic solar panel assembly comprises: the EVA adhesive film comprises the following raw materials, by weight, 75-85 parts of polyethylene-polyvinyl acetate copolymer, 17-23 parts of glycidyl methacrylate, 21-25 parts of nano carbon-silver, 2-5 parts of an initiator, 2-5 parts of a crosslinking curing agent, 1-3 parts of an antioxidant and 0.5-0.7 part of a flame retardant.
4. The method of claim 2, wherein the step of preparing the high strength moisture resistant photovoltaic solar panel assembly comprises: the initiator is any one of azobisisobutyronitrile, potassium persulfate, ammonium persulfate and dimethyl azobisisobutyrate.
5. The method of claim 2, wherein the step of preparing the high strength moisture resistant photovoltaic solar panel assembly comprises: the crosslinking curing agent is any one or combination of more of cumyl peroxide, 2, 5-dimethyl-2, 5-di-tert-butyl peroxy hexane and n-butyl 4, 4-di (tert-amyl peroxy) valerate.
6. The method of claim 2, wherein the step of preparing the high strength moisture resistant photovoltaic solar panel assembly comprises: the step (2) of depositing the diamond film on the surface of the silicon wafer by adopting a plasma chemical deposition method comprises the following steps;
dispersing the nano-diamond micro-powder in an acetone solution, and magnetically stirring to obtain a nano-diamond suspension; soaking the silicon wafer in the nano-diamond suspension, ultrasonically oscillating for 5-10min, drying, placing in a plasma deposition device, respectively introducing hydrogen, argon and methane, introducing 5KPa under the pressure of 75 KPa under the current of 850 ℃, depositing for 40-50min, and obtaining the silicon wafer with the surface deposited with the compact diamond film.
7. A high-strength moisture-resistant photovoltaic solar panel module prepared by the preparation method of claims 1-6.
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