CN114384765A - Photoetching equipment and state adjusting method and device thereof - Google Patents

Photoetching equipment and state adjusting method and device thereof Download PDF

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Publication number
CN114384765A
CN114384765A CN202011140775.0A CN202011140775A CN114384765A CN 114384765 A CN114384765 A CN 114384765A CN 202011140775 A CN202011140775 A CN 202011140775A CN 114384765 A CN114384765 A CN 114384765A
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CN
China
Prior art keywords
focus value
initial
state
photoetching equipment
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011140775.0A
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Chinese (zh)
Inventor
梁贤石
金成昱
金帅炯
贺晓彬
杨涛
刘金彪
李亭亭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Microelectronics of CAS
Zhenxin Beijing Semiconductor Co Ltd
Original Assignee
Institute of Microelectronics of CAS
Zhenxin Beijing Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Microelectronics of CAS, Zhenxin Beijing Semiconductor Co Ltd filed Critical Institute of Microelectronics of CAS
Priority to CN202011140775.0A priority Critical patent/CN114384765A/en
Publication of CN114384765A publication Critical patent/CN114384765A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus

Abstract

The disclosure provides a lithographic apparatus and a method and a device for adjusting a state thereof. The state adjusting method of the photoetching equipment comprises the following steps: carrying out focus detection on the photoetching equipment according to the standard wafer to obtain the current focus value of the photoetching equipment; adjusting the state of the photoetching equipment according to the current focus value and the initial focus value corresponding to the standard wafer; wherein the standard wafer is fabricated by the lithography apparatus in an initial state according to the initial focus value. The scheme has the advantages that: compensating the latest change value of the photoetching equipment into the equipment so as to ensure that the focus value is still the same as the original focus value; the phenomenon of error measurement caused by factors such as the change of the gluing thickness can be removed; because the glue is not needed to be coated, the related cost can be saved; the time required for focusing is reduced since no exposure on the lithography machine is required.

Description

Photoetching equipment and state adjusting method and device thereof
Technical Field
The disclosure relates to the technical field of semiconductors, in particular to a lithographic apparatus and a method and a device for adjusting the state of the lithographic apparatus.
Background
Photolithography, which is a process for transferring a series of chip patterns on a mask sequentially to corresponding layers of a wafer by exposure, is a very important process in semiconductor manufacturing, and is considered as a core step in large-scale integrated circuit manufacturing. A series of complex and time-consuming photolithography processes in semiconductor manufacturing are mainly performed by a corresponding TRACK and photolithography machine, such as a scanning photolithography machine (Scanner).
Before photolithography is performed by using a photolithography machine, focus detection is generally required. The conventional focus detection method is shown in fig. 1, wherein the left side is a focus detection flowchart, and the right side is a glue spreading and developing machine TRACK and a lithography machine. The existing focus detection process includes wafer coating, pattern exposure and development, and finally, focus value measurement is performed to confirm the best focus.
However, the paste Thickness (Thick coated PR) is changed on the paste developing machine TRACK, and the exposure energy (Exposure energy) must be changed due to the change of the paste Thickness, for example, the paste Thickness is 6000, 6500, 7000, which correspond to the exposure energy of 22mj/cm2、25mj/cm2、28mj/cm2. The variation of the gluing thickness causes the optimal focal length to be detected to be changed all the time, and causes the process condition to be changed all the time, which can cause the difference between the current focusing value and the initial focusing value, and influences the process stability.
Disclosure of Invention
The invention aims to provide a photoetching equipment and a state adjusting method and a state adjusting device thereof, so as to prevent the change of a wafer gluing thickness from causing the change of a focal distance compared with an initial phase, thereby ensuring that the focus value of the photoetching equipment is the same as the initial value.
A first aspect of the disclosure provides a method for adjusting a state of a lithographic apparatus, comprising:
carrying out focus detection on the photoetching equipment according to the standard wafer to obtain the current focus value of the photoetching equipment;
adjusting the state of the photoetching equipment according to the current focus value and the initial focus value corresponding to the standard wafer;
wherein the standard wafer is fabricated by the lithography apparatus in an initial state according to the initial focus value.
A second aspect of the present disclosure provides a lithographic apparatus state adjustment apparatus, comprising:
the detection module is used for carrying out focus detection on the photoetching equipment according to a standard wafer to obtain a current focus value of the photoetching equipment;
the adjusting module is used for adjusting the state of the photoetching equipment according to the current focus value and the initial focus value corresponding to the standard wafer;
wherein the standard wafer is fabricated by the lithography apparatus in an initial state according to the initial focus value.
A third aspect of the disclosure provides a lithographic apparatus comprising a state adjustment device according to the second aspect.
This disclosure compares advantage with prior art and lies in:
1. compensating the latest change value of the photoetching equipment into the equipment so as to ensure that the focus value is still the same as the original focus value;
2. the phenomenon of error measurement caused by factors such as the change of the gluing thickness can be removed;
3. because the glue is not needed to be coated, the related cost can be saved;
4. the time required for focusing is reduced since no exposure on the lithography machine is required.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the disclosure. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic diagram of a prior art focus detection method and apparatus;
FIG. 2 depicts a flow chart of a method of tuning a state of a lithographic apparatus provided by the present disclosure;
FIG. 3 illustrates a schematic diagram of a standard wafer provided by the present disclosure;
FIG. 4 depicts a schematic diagram of a state adjustment apparatus for a lithographic apparatus according to the present disclosure.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
In order to solve the problems in the prior art, embodiments of the present disclosure provide a lithographic apparatus and a method and an apparatus for adjusting a state thereof, which can prevent a focal length from changing compared with an initial value due to a change in a wafer glue thickness, thereby ensuring that a focus value of the lithographic apparatus is the same as the initial value, and will be described below with reference to the accompanying drawings.
FIG. 2 is a flow chart illustrating a method of tuning a state of a lithographic apparatus provided by the present disclosure, as shown in FIG. 2, the method comprising:
step S101: carrying out focus detection on the photoetching equipment according to the standard wafer to obtain the current focus value of the photoetching equipment;
step S102: adjusting the state of the photoetching equipment according to the current focus value and the initial focus value corresponding to the standard wafer;
wherein the standard wafer is fabricated by the lithography apparatus in an initial state according to the initial focus value.
Specifically, step S102 includes:
comparing the current focus value with the initial focus value to obtain compensation data;
and adjusting the focusing parameter setting of the photoetching equipment according to the compensation data so as to restore the current focusing value of the photoetching equipment to the initial focusing value.
According to some embodiments of the present disclosure, the method may further include: and confirming the state of the adjusted photoetching equipment. That is, the lithography apparatus after adjusting the focus parameter setting may be focus-checked again according to the standard wafer to confirm that the current focus value is restored to the initial focus value.
The manufacturing process of the standard wafer is as follows:
determining that the photoetching equipment is in an initial state, and setting an initial focus value;
carrying out photoetching process treatment on a preset number of wafers according to the initial focusing value;
and taking the processed wafer as a standard wafer.
Specifically, taking the processed wafer as a standard wafer may include:
carrying out focusing measurement on the processed wafers with the preset number;
and eliminating the wafers with the measurement data larger than the preset threshold value, and taking the rest wafers as standard wafers. Fig. 3 shows a schematic view of a standard wafer.
According to some embodiments of the present disclosure, the preset number may be 10.
Specifically, the data of a Factory Acceptance Test (FAT) and a field acceptance test (SAT) of the lithography equipment can be compared to determine that the lithography equipment is in an initial state, and after focusing is performed, the wafer is etched. The method can use the photoetching equipment in an initial state to focus 10 wafers under the same condition, then etch the exposed 10 wafers under the same condition, and obtain a plurality of standard wafers after screening.
This disclosure compares advantage with prior art and lies in:
1. compensating the latest change value of the photoetching equipment into the equipment so as to ensure that the focus value is still the same as the original focus value;
2. the phenomenon of error measurement caused by factors such as the change of the gluing thickness can be removed;
3. because the glue is not needed to be coated, the related cost can be saved;
4. the time required for focusing is reduced since no exposure on the lithography machine is required.
FIG. 4 is a schematic diagram of a lithographic apparatus state adjustment apparatus according to the present disclosure, and as shown in FIG. 4, the lithographic apparatus state adjustment apparatus 10 includes:
the detection module 101 is configured to perform focus detection on the lithography equipment according to a standard wafer to obtain a current focus value of the lithography equipment;
an adjusting module 102, configured to perform state adjustment on the lithography apparatus according to the current focus value and an initial focus value corresponding to the standard wafer;
wherein the standard wafer is fabricated by the lithography apparatus in an initial state according to the initial focus value.
According to some embodiments of the present disclosure, the adjusting module 102 is specifically configured to:
comparing the current focus value with the initial focus value to obtain compensation data;
and adjusting the focusing parameter setting of the photoetching equipment according to the compensation data so as to restore the current focusing value of the photoetching equipment to the initial focusing value.
In some embodiments according to the present disclosure, the adjusting module 102 is further configured to:
and confirming the state of the adjusted photoetching equipment.
The manufacturing process of the standard wafer is as follows:
determining that the photoetching equipment is in an initial state, and setting an initial focus value;
carrying out photoetching process treatment on a preset number of wafers according to the initial focusing value;
and taking the processed wafer as a standard wafer.
Specifically, taking the processed wafer as a standard wafer may include:
carrying out focusing measurement on the processed wafers with the preset number;
and eliminating the wafers with the measurement data larger than the preset threshold value, and taking the rest wafers as standard wafers. Fig. 3 shows a schematic view of a standard wafer.
According to some embodiments of the present disclosure, the preset number may be 10.
Specifically, the data of a Factory Acceptance Test (FAT) and a field acceptance test (SAT) of the lithography equipment can be compared to determine that the lithography equipment is in an initial state, and after focusing is performed, the wafer is etched. The method can use the photoetching equipment in an initial state to focus 10 wafers under the same condition, then etch the exposed 10 wafers under the same condition, and obtain a plurality of standard wafers after screening.
This disclosure compares advantage with prior art and lies in:
1. compensating the latest change value of the photoetching equipment into the equipment so as to ensure that the focus value is still the same as the original focus value;
2. the phenomenon of error measurement caused by factors such as the change of the gluing thickness can be removed;
3. because the glue is not needed to be coated, the related cost can be saved;
4. the time required for focusing is reduced since no exposure on the lithography machine is required.
The disclosure also provides a lithographic apparatus comprising the lithographic apparatus state adjustment device according to the above embodiment.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to be within the scope of the present disclosure.

Claims (10)

1. A method of adjusting a state of a lithographic apparatus, comprising:
carrying out focus detection on the photoetching equipment according to the standard wafer to obtain the current focus value of the photoetching equipment;
adjusting the state of the photoetching equipment according to the current focus value and the initial focus value corresponding to the standard wafer;
wherein the standard wafer is fabricated by the lithography apparatus in an initial state according to the initial focus value.
2. The method of claim 1, wherein the adjusting the state of the lithographic apparatus according to the current focus value and an initial focus value corresponding to the standard wafer comprises:
comparing the current focus value with the initial focus value to obtain compensation data;
and adjusting the focusing parameter setting of the photoetching equipment according to the compensation data so as to restore the current focusing value of the photoetching equipment to the initial focusing value.
3. The method according to claim 1 or 2, characterized in that the method further comprises:
and confirming the state of the adjusted photoetching equipment.
4. The method of claim 1, wherein the standard wafer is fabricated as follows:
determining that the photoetching equipment is in an initial state, and setting an initial focus value;
carrying out photoetching process treatment on a preset number of wafers according to the initial focusing value;
and taking the processed wafer as a standard wafer.
5. The method of claim 4, wherein the treating the processed wafer as a standard wafer comprises:
carrying out focusing measurement on the processed wafers with the preset number;
and eliminating the wafers with the measurement data larger than the preset threshold value, and taking the rest wafers as standard wafers.
6. The method of claim 5, wherein the predetermined number is 10.
7. A lithographic apparatus state adjustment apparatus, comprising:
the detection module is used for carrying out focus detection on the photoetching equipment according to a standard wafer to obtain a current focus value of the photoetching equipment;
the adjusting module is used for adjusting the state of the photoetching equipment according to the current focus value and the initial focus value corresponding to the standard wafer;
wherein the standard wafer is fabricated by the lithography apparatus in an initial state according to the initial focus value.
8. The status adjustment apparatus according to claim 7, wherein the adjustment module is specifically configured to:
comparing the current focus value with the initial focus value to obtain compensation data;
and adjusting the focusing parameter setting of the photoetching equipment according to the compensation data so as to restore the current focusing value of the photoetching equipment to the initial focusing value.
9. The status adjustment apparatus according to claim 7 or 8, wherein the adjustment module is further configured to:
and confirming the state of the adjusted photoetching equipment.
10. A lithographic apparatus comprising a state adjustment device according to any one of claims 7 to 9.
CN202011140775.0A 2020-10-22 2020-10-22 Photoetching equipment and state adjusting method and device thereof Pending CN114384765A (en)

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Application Number Priority Date Filing Date Title
CN202011140775.0A CN114384765A (en) 2020-10-22 2020-10-22 Photoetching equipment and state adjusting method and device thereof

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Application Number Priority Date Filing Date Title
CN202011140775.0A CN114384765A (en) 2020-10-22 2020-10-22 Photoetching equipment and state adjusting method and device thereof

Publications (1)

Publication Number Publication Date
CN114384765A true CN114384765A (en) 2022-04-22

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW451056B (en) * 1999-09-14 2001-08-21 Sony Corp Mechanism and method for controlling the focal point position of UV light and apparatus and method for inspection
CN102193330A (en) * 2010-03-12 2011-09-21 Asml荷兰有限公司 Lithographic apparatus and device manufacturing method
CN105988310A (en) * 2015-02-26 2016-10-05 中芯国际集成电路制造(上海)有限公司 Photo-etching method and wafer
CN106707695A (en) * 2016-11-28 2017-05-24 深圳凯世光研股份有限公司 Real-time focusing method and device based on active focusing
CN109906410A (en) * 2016-11-02 2019-06-18 Asml荷兰有限公司 Height sensor, lithographic equipment and the method for manufacturing device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW451056B (en) * 1999-09-14 2001-08-21 Sony Corp Mechanism and method for controlling the focal point position of UV light and apparatus and method for inspection
CN102193330A (en) * 2010-03-12 2011-09-21 Asml荷兰有限公司 Lithographic apparatus and device manufacturing method
CN105988310A (en) * 2015-02-26 2016-10-05 中芯国际集成电路制造(上海)有限公司 Photo-etching method and wafer
CN109906410A (en) * 2016-11-02 2019-06-18 Asml荷兰有限公司 Height sensor, lithographic equipment and the method for manufacturing device
CN106707695A (en) * 2016-11-28 2017-05-24 深圳凯世光研股份有限公司 Real-time focusing method and device based on active focusing

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