CN114381716B - 镀膜设备 - Google Patents

镀膜设备 Download PDF

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CN114381716B
CN114381716B CN202110022234.6A CN202110022234A CN114381716B CN 114381716 B CN114381716 B CN 114381716B CN 202110022234 A CN202110022234 A CN 202110022234A CN 114381716 B CN114381716 B CN 114381716B
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陈冠州
王庆钧
黄智勇
梁沐旺
林义钧
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Abstract

本发明公开一种镀膜设备，其包括腔体、进气装置、气环、载盘以及挡环。腔体具有镀膜区与非镀膜区。进气装置连通于腔体，其中进气装置对应于镀膜区设置，且用以将制作工艺气体引入镀膜区。气环设置于腔体内，其中气环环绕进气装置，且用以在镀膜区内形成环形气幕。载盘设置于镀膜区内，其中气环位于进气装置与载盘之间，且载盘用以承载待镀物。待镀物被环形气幕围绕。挡环设置于腔体内，且环绕载盘。挡环位于气环与载盘之间，且沿着镀膜区与非镀膜区的交界处设置。挡环具有多个穿孔。

Description

镀膜设备
技术领域
本发明涉及一种制作工艺设备，尤其涉及一种镀膜设备。
背景技术
镀膜技术广泛应用于半导体产业、光电业或其他相关产业，就现有的镀膜设备而言，待镀物由腔体内的载盘所承载，且制作工艺气体通过进气装置引入腔体。在将制作工艺气体引入腔体后，对制作工艺气体通电以使制作工艺气体离子化，并通过加热装置加热载盘上的待镀物，使得离子化后的气体在腔体内产生化学反应并沉积于待镀物的表面以形成薄膜。
在前述化学反应过程中产生的副产物及未参与反应的制作工艺气体形成大小不一的微粒，并通过抽气装置抽离腔体。然而，现有的镀膜设备无法有效控制腔体内的气流循环路径，导致前述微粒在腔体内任意漂流扩散，从而影响到镀膜质量与均匀性。
发明内容
本发明是针对一种镀膜设备，其有助于提高镀膜质量与均匀性。
根据本发明的一实施例，镀膜设备包括腔体、进气装置、气环、载盘以及挡环。腔体具有镀膜区与位于镀膜区外围的非镀膜区。进气装置连通于腔体，其中进气装置对应于腔体的镀膜区设置，且用以将制作工艺气体引入腔体的镀膜区。气环设置于腔体内，其中气环环绕进气装置，且用以在镀膜区内形成环形气幕。载盘设置于腔体的镀膜区内，其中气环位于进气装置与载盘之间，且载盘用以承载待镀物。待镀物被环形气幕围绕。挡环设置于腔体内，且环绕载盘。挡环位于气环与载盘之间，且沿着镀膜区与非镀膜区的交界处设置。挡环具有面向镀膜区的内壁面、面向非镀膜区的外壁面以及多个穿孔，且所述多个穿孔贯通内壁面与外壁面。
附图说明
图1A是本发明一实施例的镀膜设备的示意图；
图1B是图1A的环形气幕的示意图；
图2A是形成在图1A的挡环的流场的局部放大截面示意图；
图2B是形成在不具有穿孔的挡环的流场的局部放大截面示意图；
图3A是图1A的挡环与载盘的局部放大截面示意图；
图3B至3I是其他实施态样的挡环与载盘的局部放大截面示意图；
图4A与图4B是图1A的气环于两不同视角的示意图；
图5是本发明另一实施例的气环的示意图；
图6是本发明又一实施例的气环的示意图。
具体实施方式
现将详细地参考本发明的示范性实施例，示范性实施例的实例说明于附图中。只要有可能，相同元件符号在附图和描述中用来表示相同或相似部分。
图1A是本发明一实施例的镀膜设备的示意图。请参考图1A，在本实施例中，镀膜设备100包括腔体110、进气装置120、气环130、载盘140以及挡环150，其中腔体110可连接真空泵，且真空泵可对腔体110抽气，使得腔体110内部形成真空状态。详细而言，腔体110具有镀膜区111与位于镀膜区111外围的非镀膜区112，其中进气装置120连通于腔体110，且对应于腔体110的镀膜区111设置。另一方面，气环130设置于腔体110内，其中气环130环绕进气装置120，且可以是沿着进气装置120的边缘延伸的封闭式环状结构。
载盘140设置于腔体110的镀膜区111内，其中气环130位于进气装置120与载盘140之间，且载盘140用以承载待镀物10。另一方面，挡环150设置于腔体110内，且环绕载盘140。进一步来说，挡环150位于气环130与载盘140之间，且待镀物10位于挡环150内。挡环150朝向气环130凸出于载盘140的边缘，且可以是沿着载盘140的边缘延伸的封闭式环状结构。举例来说，挡环150可以是矩形环状结构、圆形环状结构、椭圆形环状结构或多边形环状结构。
图1B是图1A的环形气幕的示意图。请参考图1A与图1B，在本实施例中，进气装置120用以将制作工艺气体20引入腔体110的镀膜区111，并朝向载盘140吹送气流。另一方面，气环130朝向载盘140吹送气流，以在镀膜区111内形成环形气幕101，并产生层流边界效应。详细而言，待镀物10被环形气幕101围绕，且环形气幕101邻近镀膜区111与非镀膜区112的交界处。因此，环形气幕101可防止制作工艺气体20自镀膜区111外流至非镀膜区112，以提高制作工艺气体20停留在镀膜区111内的时间及制作工艺气体20在镀膜区111内的浓度，使得制作工艺气体20在镀膜区111内充分地产生化学反应并沉积于待镀物10的表面以形成薄膜，以提高镀膜品质与均匀性。
另一方面，在前述化学反应过程中，副产物及未参与反应的制作工艺气体20形成大小不一的微粒。进一步来说，微粒可受气流引导而自镀膜区111流动至非镀膜区112，且环形气幕101可用以防堵位于非镀膜区112内的微粒回流至镀膜区111，故可避免微粒对镀膜质量与均匀性造成不良影响。
气环130与挡环150设置于进气装置120与载盘140之间，其中挡环150沿着镀膜区111与非镀膜区112的交界处设置，且沿着镀膜区111与非镀膜区112的交界处延伸。详细而言，气环130在载盘140上的正投影位置也位于挡环150内，相应地，环形气幕101落在载盘140周围的位置也位于挡环150周围内。基于环形气幕101与挡环150的配合，制作工艺气体20停留在镀膜区111内的时间及制作工艺气体20在镀膜区111内的浓度都能够显著的提升。
图2A是形成在图1A的挡环的流场的局部放大截面示意图。图2B是形成在不具有穿孔的挡环的流场的局部放大截面示意图。请参考图1A与图2A，在本实施例中，挡环150具有面向镀膜区111的内壁面151、面向非镀膜区112的外壁面152以及多个穿孔153，其中所述多个穿孔153贯通内壁面151与外壁面152，且作为引流孔。在气流流抵载盘140后，一部分的气流可自镀膜区111流经挡环150的上方，然后流动至非镀膜区112。同时，另一部分的气流可自镀膜区111流经所述多个穿孔153，然后流动至非镀膜区112。
如图2B所示，在挡环1501未设有连通内壁面151与外壁面152的多个引流孔的情况下，挡环1501的内壁面151与外壁面152之间存在过大的压差。因此，如图2B所示，流动至非镀膜区112的气流在挡环1501的外壁面152形成涡流或紊流，进而影响到气流的循环效率。
如图2A所示，挡环150设有连通内壁面151与外壁面152的多个引流孔(即穿孔153)，据以平衡挡环150的内壁面151与外壁面152之间的压差，以消除形成在挡环150的外壁面152的涡流或紊流，并提高气流的循环效率。
请参考图1A与图2A，在一实施例中，挡环150的内壁面151为粗糙表面，即内壁面151具有凹凸起伏或经表面粗糙处理。详细而言，随气流流动的一部分的微粒自镀膜区111流动至非镀膜区112，而另一部份的微粒撞击并附着于挡环150的内壁面151，故能避免微粒在镀膜区111内任意漂流扩散。由于挡环150的内壁面151为粗糙表面，因此能提高微粒在挡环150的内壁面151的附着效果。
举例来说，在挡环150的环状结构上，所述多个穿孔153采等距地排列设置，且数量为八个，但本发明不限于此。
请参考图1A，镀膜设备100还包括加热器160与抽气装置170，其中加热器160设置于腔体110的镀膜区111下方，且载盘140设置于加热器160的上方。加热器160用以对载盘140上的待镀物10加热，并提高镀膜区111内的温度。抽气装置170连通于腔体110，其中抽气装置170对应于腔体110的非镀膜区112设置，且用以将副产物及未参与反应的制作工艺气体20所形成的微粒抽离腔体110。
图3A是图1A的挡环与载盘的局部放大截面示意图。请参考图3A，挡环150的内壁面151与载盘140之间的夹角102介于60至90度，以提高微粒在内壁面151上的附着效果。另一方面，穿孔153的孔径为D，且挡环150的高度为H，两者的关系满足以下条件：0.15≤D/H≤0.2，以消除可能形成在挡环150的外壁面152的涡流或紊流，并提高微粒在内壁面151上的附着效果。除此之外，穿孔153的中心高度为HC，且挡环150的高度为H，两者的关系满足以下条件：1/3≤HC/H≤1/2，以消除可能形成在挡环150的外壁面152的涡流或紊流，并提高微粒在内壁面151上的附着效果。
举例来说，挡环150与载盘140可为一体成型的结构，且可采用石墨或其他高导热材制成。在其他实施例中，挡环可拆的安装于载盘上，故可视挡环的耗损状况进行拆卸替换的动作。
图3B至3I是其他实施态样的挡环与载盘的局部放大截面示意图。相较于图3A所示的挡环150而言，图3B所示的挡环1502为梯形结构。相较于图3A所示的挡环150而言，图3C所示的挡环1503为弧形结构，且挡环1503的凹弧面向载盘140。相较于图3A所示的挡环150而言，图3D所示的挡环1504为L型结构。较于图3A所示的挡环150而言，图3E所示的挡环1505为L型结构，且垂直于载盘140的区段大致呈梯形。较于图3A所示的挡环150而言，图3F所示的挡环1506包括接触载盘140的第一水平段、垂直于第一水平段的垂直段以及平行于第一水平段的第二水平段，其中第二水平段悬空于载盘140，且第一水平段与第二水平段分别连接垂直段的两端。
相较于图3A所示的挡环150而言，图3G所示的挡环1507包括接触载盘140的水平段、垂直于水平段的垂直段以及悬空于载盘140的倾斜段，其中水平段与倾斜段分别连接垂直段的两端，且倾斜段与垂直段之间的夹角为钝角。相较于图3A所示的挡环150而言，图3H所示的挡环1508包括接触载盘140的第一倾斜段与连接第一倾斜段的第二倾斜段，其中第二倾斜段悬空于载盘140，且第一倾斜段与第二倾斜段之间的夹角为钝角。相较于图3A所示的挡环150而言，图3I所示的挡环1509包括接触载盘140的倾斜段与连接倾斜段的水平段，其中水平段悬空于载盘140，且倾斜段与水平段之间的夹角为锐角。
图4A与图4B是图1A的气环于两不同视角的示意图。请参考图1A、图4A及图4B，在本实施例中，气环130具有顶面131、底面132、位于顶面131的多个进气口133、位于底面132的多个第一出气口134以及位于底面132的多个第二出气口135，其中顶面131朝向进气装置120，且底面132朝向载盘140。在本实施例中，所述多个进气口133为三个，且三个进气口133等距地排列于顶面131，但本发明对于进气口133的数量不加以限制。另外，在其他实施态样中，三个进气口133可不等距地排列于顶面131。举例来说，进气口133可为圆孔、椭圆孔、长条孔、多边形孔、不规则形孔、狭槽或弧形槽。在其他实施例中，进气口可为沿着气环的顶面延伸的环形槽。
进一步而言，所述多个进气口133通过气环130的内部流道连通于所述多个第一出气口134与所述多个第二出气口135，且气流自所述多个第一出气口134与所述多个第二出气口135流出后形成环形气幕101。举例来说，第一出气口134与第二出气口135可为圆孔、椭圆孔、长条孔、多边形孔、不规则形孔、狭槽或弧形槽。在其他实施例中，第一出气口与第二出气口可为沿着气环的底面延伸的环形槽。
请参考图1A、图1B及图4B，所述多个第一出气口134排列在内圈，且气流自排列在内圈的所述多个第一出气口134流出后形成第一环形气幕101a。所述多个第二出气口135排列在外圈，且气流自排列在外圈的所述多个第二出气口135流出后形成第二环形气幕101b。在径向103上，排列在内圈的任一个第一出气口134对准排列在外圈的一个第二出气口135。
请参考图4A，气环130还具有连接顶面131与底面132的内表面136，在一实施例中，内表面136为粗糙表面，即内表面136具有凹凸起伏或经表面粗糙处理。由于气环130的内表面136为粗糙表面，因此能提高微粒在气环130的内表面136的附着效果。举例来说，气环130可具有发泡材或孔隙物。
图5是本发明另一实施例的气环的示意图。请参考图5，本实施例的气环1301的结构设计与图4B的气环130的结构设计大致相同，差异在于：在本实施例的气环1301中，排列在内圈的任一个第一出气口1341的孔径大于排列在外圈的任一个第二出气口1351的孔径。因此，气流自排列在外圈的所述多个第二出气口1351流出后的流速大于气流自排列在内圈的所述多个第一出气口1341流出后的流速，据以防堵制作工艺气体20自镀膜区外流，或防堵微粒自非镀膜区回流。
图6是本发明又一实施例的气环的示意图。请参考图6，本实施例的气环1302的结构设计与图4B的气环130的结构设计大致相同，差异在于：在本实施例的气环1301中，在径向103上，排列在内圈的一个第一出气口1342位于排列在外圈的相邻的二个第二出气口1352之间。也就是说，排列在内圈的所述多个第一出气口1342错位于排列在外圈的所述多个第二出气口1352。
综上所述，本发明的镀膜设备在镀膜区内形成环形气幕，其中待镀物被环形气幕围绕，且环形气幕邻近镀膜区与非镀膜区的交界处。因此，环形气幕可防止制作工艺气体自镀膜区外流至非镀膜区，以提高制作工艺气体停留在镀膜区内的时间及制作工艺气体在镀膜区内的浓度，使得制作工艺气体在镀膜区内充分地产生化学反应并沉积于待镀物的表面以形成薄膜，以提高镀膜品质与均匀性。另一方面，在前述化学反应过程中，副产物及未参与反应的制作工艺气体形成大小不一的微粒。进一步来说，微粒可受气流引导而自镀膜区流动至非镀膜区，且环形气幕可用以防堵位于非镀膜区内的微粒回流至镀膜区，故可避免微粒对镀膜质量与均匀性造成不良影响。
待镀物由载盘所承载，其中载盘的边缘设有挡环，且环形气幕落在载盘上的位置位于挡环内。基于环形气幕与挡环的配合，制作工艺气体停留在镀膜区内的时间及制作工艺气体在镀膜区内的浓度都能够显著的提升。另一方面，挡环具有多个引流孔(即多个穿孔)，据以平衡挡环的内外压差，以消除形成在挡环外的涡流或紊流，并提高气流的循环效率。除此之外，挡环可供微粒附着于其上，以避免微粒在镀膜区内任意漂流扩散。
最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。

Claims (14)

1.一种镀膜设备，其特征在于，包括：
腔体，具有镀膜区与位于所述镀膜区外围的非镀膜区；
进气装置，连通于所述腔体，其中所述进气装置对应于所述腔体的所述镀膜区设置，且用以将制作工艺气体引入所述腔体的所述镀膜区；
气环，设置于所述腔体内，其中所述气环环绕所述进气装置，且用以在所述镀膜区内形成环形气幕；
载盘，设置于所述腔体的所述镀膜区内，其中所述气环位于所述进气装置与所述载盘之间，且所述载盘用以承载待镀物，所述待镀物被所述环形气幕围绕；以及
挡环，设置于所述腔体内，且环绕所述载盘，其中所述挡环位于所述气环与所述载盘之间，且沿着所述镀膜区与所述非镀膜区的交界处设置，所述挡环具有面向所述镀膜区的内壁面、面向所述非镀膜区的外壁面以及多个穿孔，且所述多个穿孔贯通所述内壁面与所述外壁面，所述气环在所述载盘上的正投影位置位于所述挡环内，且所述环形气幕落在所述载盘周围的位置位于所述挡环周围内。
2.根据权利要求1所述的镀膜设备，其特征在于，还包括：
加热器，设置于所述腔体的所述镀膜区下方，且所述载盘设置于所述加热器的上方。
3.根据权利要求1所述的镀膜设备，其特征在于，还包括：
抽气装置，连通于所述腔体，其中所述抽气装置对应于所述腔体的所述非镀膜区设置。
4.根据权利要求1所述的镀膜设备，其特征在于，所述气环具有顶面、底面、位于所述顶面的多个进气口以及位于所述底面的多个出气口，且所述多个出气口连通于所述多个进气口。
5.根据权利要求4所述的镀膜设备，其特征在于，所述多个出气口的一部分排列在内圈，且所述多个出气口的另一部分排列在外圈，在径向上，排列在所述内圈的任一所述出气口对准排列在所述外圈的一所述出气口。
6.根据权利要求4所述的镀膜设备，其特征在于，所述多个出气口的一部分排列在内圈，且所述多个出气口的另一部分排列在外圈，在径向上，排列在所述内圈的所述多个出气口中的任一者位于排列在所述外圈的所述多个出气口中的任二相邻者之间。
7.根据权利要求4所述的镀膜设备，其特征在于，所述多个出气口的一部分排列在内圈，且所述多个出气口的另一部分排列在外圈，排列在所述内圈的所述多个出气口中的任一者的孔径大于排列在所述外圈的所述多个出气口中的任一者的孔径。
8.根据权利要求4所述的镀膜设备，其特征在于，所述多个进气口等距排列在所述顶面。
9.根据权利要求4所述的镀膜设备，其特征在于，所述气环还具有连接所述顶面与所述底面的内表面，且所述内表面为粗糙表面。
10.根据权利要求1所述的镀膜设备，其特征在于，所述挡环的所述内壁面为粗糙表面。
11.根据权利要求1所述的镀膜设备，其特征在于，任一所述穿孔的孔径为D，且所述挡环的高度为H，0.15≤D/H≤0.2。
12.根据权利要求1所述的镀膜设备，其特征在于，所述内壁面与所述载盘之间的夹角介于60至90度。
13.根据权利要求1所述的镀膜设备，其特征在于，任一所述穿孔的中心高度为HC，且所述挡环的高度为H，1/3≤HC/H≤1/2。
14.根据权利要求1所述的镀膜设备，其特征在于，所述挡环凸出于所述载盘的边缘。
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