CN114381340B

CN114381340B - Cleaning agent and preparation method thereof

Info

Publication number: CN114381340B
Application number: CN202111669680.2A
Authority: CN
Inventors: 郭艳萍; 巫清霞
Original assignee: Shenzhen Unibright Technology Co ltd
Current assignee: Shenzhen Unibright Technology Co ltd
Priority date: 2021-12-30
Filing date: 2021-12-30
Publication date: 2023-09-22
Anticipated expiration: 2041-12-30
Also published as: CN114381340A

Abstract

The application relates to the technical field of cleaning materials, in particular to a cleaning agent and a preparation method thereof. The cleaning agent comprises the following components in percentage by weight: 1-10% of a surfactant; 5-20% of other auxiliary agents; 20-50% of organic solvent; the balance being water; the surfactant comprises a first nonionic surfactant and a second nonionic surfactant, wherein the first nonionic surfactant is an asymmetric Gemini type alkyl glycoside. The cleaning agent has excellent cleaning capability, has good compatibility with high lead solder paste commonly used in semiconductors, and has good compatibility and protection effects on non-conductive materials and conductive materials, so that the cleaning agent has good application prospect in cleaning semiconductor devices.

Description

Cleaning agent and preparation method thereof

Technical Field

The application belongs to the technical field of cleaning materials, and particularly relates to a cleaning agent and a preparation method thereof.

Background

Semiconductor devices typically have semiconductor chip (chip) bond pads connected to a substrate (substrate) or frame (leadframe) or plastic foil (film) or Printed Circuit Board (PCB) by ultra-fine metal wires (mainly gold, copper, aluminum, etc.) or conductive resin to form the desired traces, which are finally secured and protected with an insulating material housing.

The electronic product has high service life, and is required to be resistant to severe environments such as high and low temperature, high humidity and the like, and the service life depends on the welding and cleaning degree of the semiconductor device. In order to ensure the performance of the semiconductor, high-temperature reflow soldering with high lead solder paste is generally adopted for two times or three times in the soldering of the semiconductor package. Therefore, cleaning of the semiconductor device becomes a critical factor affecting the lifetime of the semiconductor. Because most semiconductor devices are subjected to two or three times of high lead solder paste reflow soldering, and the space between the welding spots of the semiconductor chips is small, the cleaning difficulty is high, and meanwhile, the semiconductor devices usually comprise non-conductive materials such as insulating epoxy resin, conductive materials such as conductive epoxy resin, metals such as gold, silver, copper, lead, tin and the like and alloy materials thereof, and the requirement on material compatibility is extremely high. Therefore, the cleaning agent for semiconductor devices is preferably capable of cleaning trace residues of high-temperature reflow soldering and ensuring compatibility of the conductive material and the nonconductive material of the semiconductor.

The existing semiconductor device is generally cleaned by adopting solvent type cleaning agents such as n-bromopropane, the cleaning agents are generally difficult to meet environmental protection standards, and the cleaning force of the semiconductor device is also insufficient; in addition, the effect of subsequent wire bonding or pin connection is also difficult to satisfy.

Disclosure of Invention

The application aims to provide a cleaning agent and a preparation method thereof, and aims to solve the problem of insufficient cleaning reliability of the conventional cleaning agent on semiconductor devices.

In order to achieve the purposes of the application, the technical scheme adopted by the application is as follows:

in a first aspect, the application provides a cleaning agent, which comprises the following components in percentage by weight, based on 100% of the total weight of the cleaning agent:

1-10% of a surfactant;

5-20% of other auxiliary agents;

20-50% of organic solvent;

the balance being water;

the surface active agent comprises a first nonionic surface active agent and a second nonionic surface active agent, wherein the first nonionic surface active agent is asymmetric Gemini type alkyl glycoside.

The cleaning agent provided by the application is a cleaning agent taking water and an organic solvent as mixed solvents, and contains two types of nonionic surfactants, namely: the asymmetric Gemini alkyl glycoside and the other nonionic surfactant are not easy to ionize in water, so that charged anions or cations are not easy to produce, the asymmetric Gemini alkyl glycoside and the other nonionic surfactant can exist in a neutral nonionic molecule or micelle state, the asymmetric Gemini alkyl glycoside has good stability, the ion residue risk of a washed piece can be reduced, the asymmetric Gemini alkyl glycoside and the other nonionic surfactant are compounded, the excellent washing capability of the detergent is endowed, meanwhile, the detergent has good compatibility to high lead solder paste commonly used for semiconductors, and has good compatibility and protection effects to non-conductive materials and conductive materials, so that the detergent has good application prospect in washing semiconductor devices.

In a second aspect, the present application provides a method for preparing a cleaning agent, comprising the steps of:

weighing all raw materials according to the formula of the cleaning agent;

and mixing the weighed raw materials.

The preparation method of the cleaning agent provided by the application takes the special cleaning agent formula as raw materials to be mixed to obtain the cleaning agent which takes water and an organic solvent as mixed solvents and contains asymmetric Gemini-type alkyl glycoside and another nonionic surfactant; the preparation method is simple in process, and the finally prepared cleaning agent has excellent cleaning capability, can be well compatible with high-lead solder paste commonly used in semiconductors, and has good compatibility and protection effects on non-conductive materials and conductive materials, so that the cleaning agent has good application prospects in cleaning of semiconductor devices.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic flow chart of a preparation method of a cleaning agent provided by the embodiment of the application.

Detailed Description

In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the application is further described in detail below with reference to the embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.

In the present application, the term "and/or" describes an association relationship of an association object, which means that three relationships may exist, for example, a and/or B may mean: a alone, a and B together, and B alone. Wherein A, B may be singular or plural. The character "/" generally indicates that the context-dependent object is an "or" relationship.

In the present application, "at least one" means one or more, and "a plurality" means two or more. "at least one of" or the like means any combination of these items, including any combination of single item(s) or plural items(s).

It should be understood that, in various embodiments of the present application, the sequence number of each process described above does not mean that the execution sequence of some or all of the steps may be executed in parallel or executed sequentially, and the execution sequence of each process should be determined by its functions and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

The terminology used in the embodiments of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

The weights of the relevant components mentioned in the description of the embodiments of the present application may refer not only to the specific contents of the components, but also to the proportional relationship between the weights of the components, so long as the contents of the relevant components in the description of the embodiments of the present application are scaled up or down within the scope of the disclosure of the embodiments of the present application. Specifically, the mass described in the specification of the embodiment of the application can be mass units known in the chemical industry field such as mu g, mg, g, kg.

The terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated for distinguishing between objects such as substances from each other. For example, a first XX may also be referred to as a second XX, and similarly, a second XX may also be referred to as a first XX, without departing from the scope of embodiments of the application. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature.

The first aspect of the embodiment of the application provides a cleaning agent, which comprises the following components in percentage by weight, based on 100% of the total weight of the cleaning agent:

1-10% of a surfactant;

5-20% of other auxiliary agents;

20-50% of organic solvent;

the balance being water;

the surfactant comprises a first nonionic surfactant and a second nonionic surfactant, wherein the first nonionic surfactant is an asymmetric Gemini type alkyl glycoside.

The cleaning agent provided by the embodiment of the application is a cleaning agent taking water and an organic solvent as mixed solvents, wherein the cleaning agent contains two types of nonionic surfactants, namely: the asymmetric Gemini alkyl glycoside and the other nonionic surfactant are not easy to ionize in water, so that charged anions or cations are not easy to produce, the asymmetric Gemini alkyl glycoside and the other nonionic surfactant can exist in a neutral nonionic molecule or micelle state, the asymmetric Gemini alkyl glycoside has good stability, the ion residue risk of a washed piece can be reduced, the asymmetric Gemini alkyl glycoside and the other nonionic surfactant are compounded, the excellent washing capability of the detergent is endowed, meanwhile, the detergent has good compatibility to high lead solder paste commonly used for semiconductors, and has good compatibility and protection effects to non-conductive materials and conductive materials, so that the detergent has good application prospect in washing semiconductor devices.

Specifically, the cleaning agent of the embodiment of the application is an organic-water-based cleaning agent, and the specific action mechanism comprises the following components by the synergistic effect of the components: (1) The first nonionic surfactant and the second nonionic surfactant are compounded to play roles in wetting, emulsifying, compatibilizing, penetrating and dispersing: the surface tension of the cleaning agent is reduced by means of wetting emulsification, compatibilization and permeation of the compounded surfactant, so that the cleaning agent has good wettability to the dirt on the semiconductor surface, which is a precondition for cleaning the dirt by the cleaning agent, and the dirt can be promoted to be separated from the surface of the semiconductor device, thereby generating a cleaning effect. Meanwhile, the dispersing effect can ensure that the dirt which is removed can be well dispersed and suspended in the cleaning agent medium, so that the dirt is not deposited on the surface of the semiconductor device. (2) a degreasing mechanism for solubility of organic contamination: similar principle of miscibility. The effect of 'dissolving' the residual dirt of welding is achieved by adopting organic solvents such as alcohol solvents which have good dissolving power such as polyester resin, polyurethane resin, alkyd resin, polyurethane resin, rosin, dammar resin, nitrocellulose, natural resin and the like in the residual welding.

The alkyl glycoside is an alkyl glycoside (Alkyl Polyglucoside, APG) synthesized from glucose and fatty alcohol, and the molecular structure thereof can be represented by the general formula RO (G) n, wherein R represents an alkyl group, G represents a glucose unit, and n represents the number of sugar units. When n.gtoreq.2 glycoside is referred to as alkyl polyglycoside. The hydrophilic group of the saccharide of the alkyl polyglycoside is connected with the lipophilic group through ether bond (-O-) and has strong acid resistance and alkali resistance, so that the saccharide is not only dissolved in acid and alkali solution, but also keeps stable in a certain acid-alkali concentration, but the conventional alkyl polyglycoside aqueous solution has rich foam and is not easy to rinse. Therefore, the embodiment of the application uses a novel asymmetric Gemini type alkyl glycoside (AGAPG), and the asymmetric Gemini type alkyl glycoside is compounded with other nonionic surfactants to endow the cleaning agent with excellent cleaning capability.

In some embodiments, the asymmetric Gemini-type alkyl glycoside is an asymmetric Gemini-type alkyl glycoside with a glycosyl tertiary amine and an alkyl dimethyl tertiary amine as polar heads. Specifically, the molecular formula of the asymmetric Gemini-type alkyl glycoside is shown in the following formula I.

Wherein m may be an integer of 2 to 20, for example, an integer of 10 to 18.

In one embodiment, m=12 in formula I; this forms an asymmetric Gemini-type alkyl glycoside (represented by C12-AGAPG) with a polar head of a glycosyl tertiary amine or dodecyl dimethyl tertiary amine.

In one embodiment, m=14 in formula I; this forms an asymmetric Gemini-type alkyl glycoside (represented by C14-AGAPG) with a glycosyl tertiary amine and tetradecyldimethyl tertiary amine as polar heads.

In one embodiment, m=16 in formula I; this forms an asymmetric Gemini-type alkyl glycoside (represented by C16-AGAPG) with a glycosyl tertiary amine and tetradecyldimethyl tertiary amine as polar heads.

The asymmetric Gemini-type alkyl glycoside has an asymmetric Gemini structure and excellent surface performance, the Critical Micelle Concentration (CMC) of the asymmetric Gemini-type alkyl glycoside can be as low as 0.025g/mL, and the corresponding solution surface tension is 23.1mN/m; the asymmetric Gemini-type alkyl glycoside double-ion head and the connecting chain structure enable the asymmetric Gemini-type alkyl glycoside double-ion head and the connecting chain structure to have excellent cleaning performance and better wettability, so the asymmetric Gemini-type alkyl glycoside double-ion head and the connecting chain structure are compounded with other nonionic surfactants to be used in the cleaning agent.

In some embodiments of the application, the asymmetric Gemini-type alkyl glycoside is selected from asymmetric Gemini-type alkyl glycosides having a glycosyl tertiary amine, dodecyl, tetradecyl, hexadecyl dimethyl tertiary amine as the polar head.

And the second nonionic surfactant compounded with the asymmetric Gemini type alkyl glycoside of the type is at least one selected from polyoxyethylene ether surfactants and alkanolamide surfactants. According to the embodiment of the application, the concentration of the critical micelle after the asymmetric Gemini alkyl glycoside is compounded with another nonionic surfactant is lower than that of a single component, so that the surface activity after the compounding is improved; specifically, when the mass ratio of the C12-AGAPG to the isomeric tridecanol polyoxyethylene ether in the polyoxyethylene ether surfactant is 1:2, when the surface tension of the mixed system is 21.8mN/m, the surface activity of the mixed system is highest.

In some embodiments, the polyoxyethylene ether nonionic surfactant is preferably branched isomeric primary alcohol ether and fatty acid methyl ester polyoxyethylene ether FMEE, the wettability of branched fatty alcohol polyether is reduced along with the increase of the relative molecular weight of fatty alcohol, and branched alcohol has better wettability and better cleaning effect, and has more excellent effects on emulsification and cleaning. More specifically, the performance of the series of isomeric dodecyl polyoxyethylene ether and isomeric tridecyl polyoxyethylene ether products in the branched chain isomeric primary alcohol ether is superior. The fatty acid methyl ester polyoxyethylene ether has the advantages of high cloud point, low foam, high water-soluble speed, strong capacity of increasing the oil and fat, good cleaning capacity, small skin irritation, good biodegradation and the like, and has various balanced properties. More specifically, the fatty acid methyl ester polyoxyethylene ether may be preferably methyl stearate polyoxyethylene ether.

In some embodiments, the alkanolamide surfactant is selected from at least one of coconut oil alkyl oxalyl gum and isopropanol amide. The alkanolamide nonionic surfactant has an amide bond in the molecule, has strong hydrolysis resistance due to the existence of the amide bond, and has no cloud point. The coconut oil alkyl oxalyl gum and the isopropyl alcohol amide (6508) have the performances of super strong dispersion, cleaning, emulsification, softness and the like, and have excellent decontamination performance, good permeability and oil stain dispersibility. The molecular contains the heterogeneous bond, so that the composition has excellent hard water resistance and calcium soap dispersing power, has very good compatibility, and can be well compounded with asymmetric Gemini alkyl glycoside.

According to the embodiment of the application, the asymmetric Gemini alkyl glycoside is compounded with polyoxyethylene ethers, alkanolamides and the like to generate a synergistic effect. The surface activity and interaction of the mixed system are analyzed mainly by a method for measuring the surface tension, and data guidance is provided for the application of the mixed system of the nonionic surfactants.

Specifically, the surface tension curves of the systems were measured by a hanging-plate method using an automatic surface tensiometer of Shanghai Fang Rui BZY-101. For comparison, all experiments were carried out at a constant temperature of 25.+ -. 1 ℃. The specific method comprises the following steps: a surfactant solution of a certain concentration is selected as a medium. And gradually dripping the surfactant compatible with the surfactant into the measuring cup, and reading out surface tension data of different concentration ratios, so as to obtain the surface tension of a series of concentration ratio compound surfactants, and further obtain CMC. Tests prove that the weight ratio of the asymmetric Gemini alkyl glycoside (such as C12-AGAPG or C14-AGAPG or C16-AGAGAGP) to another nonionic surfactant (such as polyoxyethylene ether surfactant or alkanolamide surfactant) is 1: 1.8-2.2, the effect is better, and the critical micelle concentration and the surface tension are the lowest when the mass ratio is 1:2.

Specifically, the surfactant is composed of a first nonionic surfactant and a second nonionic surfactant, and the content of the surfactant is 1-10%, such as 1%, 2%, 5%, 7%, 8%, 10%, etc.

In some embodiments, the organic solvent in the cleaning agent is an alcohol solvent. The alcohol solvent has both lipophilicity and hydrophilicity, the larger the proportion of hydroxyl groups in the molecule is, the stronger the hydrophilicity is, and the polyester resin, polyurethane resin, alkyd resin, polyurethane resin, rosin, dammar resin, nitrocellulose, natural resin and the like in welding residues can be cleaned. The alcohol solvent has excellent cleaning capability after being welded on the semiconductor device, and has good compatibility with high lead solder paste commonly used for semiconductors, and has good compatibility with metals such as gold, silver, copper, lead, tin and the like and alloy materials thereof in the semiconductors. Specifically, the alcohol solvent is at least one selected from the group consisting of methanolic alcohol solvents, alkanediol solvents, polyester polyol solvents and sugar alcohol solvents. The organic solvent may be present in an amount of 20 to 50%, such as 20%, 24%, 28%, 30%, 35%, 38%, 40%, 42%, 45%, 48%, 50%, etc.

In some embodiments, the methanolic alcohol solvent is selected from at least one of tetrahydrofuran methanol, tetrahydropyran-2-methanol, furan-2, 5-diyl dimethanol, and 2, 5-dimethylol tetrahydrofuran; the alkane diol is at least one selected from 1, 3-butanediol, 1, 5-pentanediol, 2-methyl-2, 4-pentanediol, 2-ethyl-1, 3-hexanediol, 1,2, 6-hexanetriol, 1, 9-nonanediol, ethylene glycol, propylene glycol and 2, 3-butanediol; the polyester polyol is selected from at least one of butanediol adipate and 1, 6-hexanediol adipate; the sugar alcohol is at least one selected from the group consisting of sorbitan, isomannitol, isoidide, tetritol, pentitol, heptitol, sorbitol, mannitol, iditol and galactitol.

In some embodiments, other auxiliary agents can assist the action of the components such as the surfactant, or further perform synergistic action with the components such as the surfactant, so as to improve the cleaning effect of the base cleaning agent, and meanwhile, other auxiliary agents can have an deoxidization function on the metal in the wire bonding area, so that the yield of subsequent wire bonding can be improved. For example, the other auxiliary agents in the cleaning agent are selected from at least one of sodium gluconate and sodium silicate. Sodium gluconate and sodium silicate have certain alkalinity in aqueous solution, can promote saponification reaction in the cleaning process, meanwhile, the corrosion inhibition function of the sodium gluconate and sodium silicate has a protective effect on metal materials of semiconductors, and the deoxidization function of the sodium gluconate and sodium silicate can improve the lead bonding yield of the semiconductor devices after cleaning. Therefore, the saponification, corrosion inhibition and deoxidation of the other auxiliary agents can further improve the cleaning capability of the semiconductor device. The content of other auxiliary agents can be 5-20%, such as 5%, 8%, 10%, 12%, 15%, 18%, 20%, etc.

In a second aspect of the embodiment of the present application, a method for preparing a cleaning agent is provided, as shown in fig. 1, and includes the following steps:

s01: weighing all raw materials according to the formula of the cleaning agent in the embodiment of the application;

s02: and mixing the weighed raw materials.

The preparation method of the cleaning agent provided by the embodiment of the application takes the special cleaning agent formula as raw materials to be mixed to obtain the cleaning agent which takes water and an organic solvent as mixed solvents and contains asymmetric Gemini-type alkyl glycoside and another nonionic surfactant; the preparation method is simple in process, and the finally prepared cleaning agent has excellent cleaning capability, can be well compatible with high-lead solder paste commonly used in semiconductors, and has good compatibility and protection effects on non-conductive materials and conductive materials, so that the cleaning agent has good application prospects in cleaning of semiconductor devices.

In the step S01, the raw materials of the cleaning agent are weighed. The components and the contents of the raw materials are as follows: 1-10% of a surfactant; 5-20% of other auxiliary agents; 20-50% of organic solvent; the balance being water. Specific kinds of the barrier component are described in detail above.

In the step S02, a cleaning agent is obtained by mixing. The mixing can be carried out by adopting the conventional mixing treatment in the field, such as stirring and the like, and the feeding sequence can be fed according to the feeding sequence of the conventional cleaning agent, and no matter which method is adopted for carrying out the mixing treatment, the raw materials of all the components are uniformly mixed.

The application also provides a cleaning method of the semiconductor device. The cleaning method of the semiconductor device comprises the step of cleaning the semiconductor device by adopting the cleaning agent or the cleaning agent prepared by the preparation method of the application.

The cleaning agent provided by the application has excellent cleaning capability after welding of semiconductor devices, has good compatibility with high lead solder paste commonly used for semiconductors, and has good compatibility and protection effects on non-conductive materials including insulating epoxy resin, conductive materials including conductive epoxy resin, gold, silver, copper, lead, tin and other metals and alloy materials thereof. Therefore, the semiconductor cleaning method has good cleaning effect.

The following description is made with reference to specific embodiments.

Example 1

A cleaning agent comprising, based on 100% by mass of the total:

the preparation method of the cleaning agent comprises the following steps:

step S11: measuring the raw materials of each component;

step S12: and mixing and stirring the weighed raw materials of all the components uniformly.

Example 2

A cleaning agent comprising, based on 100% by mass of the total:

the preparation method of the cleaning agent of this example is the same as that of example 1.

Example 3

A cleaning agent comprising, based on 100% by mass of the total:

Example 4

A cleaning agent comprising, based on 100% by mass of the total:

Example 5

A cleaning agent comprising, based on 100% by mass of the total:

Comparative example 1

A cleaning agent comprising, based on 100% by mass of the total:

the cleaning agent of this comparative example was prepared in the same manner as in example 1.

Comparative example 2

A cleaning agent comprising, based on 100% by mass of the total:

Comparative example 3

A cleaning agent comprising, based on 100% by mass of the total:

Comparative example 4

A cleaning agent comprising, based on 100% by mass of the total:

Correlation performance test

The cleaning agents provided in the above examples and comparative examples were subjected to the test for the relevant properties according to the following evaluation program methods, respectively.

1. Evaluating project methods and defining levels

The tin paste and the soldering flux are remained, and the observation is carried out by a microscope at a magnification of 10 x 10.

Definition level: 0 level solder paste and soldering flux residue are avoided;

the level 1 has a very small amount of solder paste and soldering flux residue at the edge of the welding point, the pin or the board surface;

the level 2 has obvious solder paste and scaling powder residue.

B ion residue, ion pollutant content three-level standard specification of less than or equal to 1.50 (NaCl) mug/cm by adopting an ion pollutant equivalent test method (dynamic method) and referring to the specification of 6.3 in SJ20869-2003 ² 。

Definition: in order to improve the reliability, the ion pollutant content of the semiconductor packaging components after cleaning is less than or equal to 0.8 (NaCl) mug/cm ² And the product is qualified.

C Metal Corrosion test

The 400m1 semi-aqueous cleaning agent was placed in 500m1 beakers, and the metal test pieces were completely immersed in the semi-aqueous cleaning agent and closed (the same material metal was placed in the same beaker), and the semi-aqueous cleaning agent was heated to 60 ℃ and incubated for 2hrs. The sample metal sheet was removed, rinsed clean with deionized water and dried thoroughly. And (3) carrying out salt spray test for 1-0 h according to GB/T10125-2012 artificial atmosphere corrosion test salt spray test, and observing the corrosion condition of the surface of the metal sample sheet with naked eyes after drying.

Definition levels are shown in table 1:

TABLE 1

D testing of Polymer corrosiveness

The method comprises the steps of respectively placing polymer test pieces such as insulating epoxy resin, conductive epoxy resin, plastic packaging material (such as o-cresol novolac epoxy resin) and the like which are commonly used for semiconductors into different containers filled with semi-water-based cleaning agents, wherein the addition amount of the semi-water-based cleaning agents is about 2cm higher than that of the test pieces, placing the test pieces at the room temperature of 23 ℃ for 24 hours, taking out the test pieces, washing the test pieces cleanly by deionized water, checking whether the polymers have color change, foaming, wrinkling, cracking, swelling and layering by a 20-time microscope, and comparing the test pieces with recorded conditions checked before being placed into a test box.

2. Test results:

the test results are shown in table 2 below:

TABLE 2

The test results in Table 2 above show that: examples 1-5 all met all evaluation items and criteria, while comparative example 1, comparative example 2, comparative example 3, comparative example 4 had some test items that were not clean, had higher levels of ionic contaminants, and had a risk of reliability. Comparative example 1 shows that the synergistic effect of the asymmetric Gemini alkyl glycoside of the present application with other nonionic surfactants is not achieved when the other surfactants are simply used without the asymmetric Gemini alkyl glycoside. Comparative example 2 shows that the synergy between the conventional alkyl glycoside and other nonionic surfactants such as polyoxyethylene ethers cannot achieve the synergy between the asymmetric Gemini alkyl glycoside of this example and other nonionic surfactants. Comparative example 3 shows that the synergistic effect of the asymmetric Gemini alkyl glycoside and other nonionic surfactants is not achieved even when the asymmetric Gemini alkyl glycoside is contained alone and no other surfactant is contained. Comparative example 4 shows that the cleaning effect of the present application cannot be achieved by containing components such as surface active agent alone and no other organic solvent or auxiliary agent.

The test result proves that the synergistic effect of the specific asymmetric Gemini alkyl glycoside and other surfactants of the embodiment of the application has excellent cleaning capability on residues after welding on a semiconductor device, and also has good decontamination capability on other pollutants, and on the basis, the synergistic effect has good compatibility and protection effects on sensitive metals and fragile materials with special functions.

The foregoing description of the preferred embodiments of the application is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the application.

Claims

1. The cleaning agent is characterized by comprising the following components in percentage by weight, based on 100% of the total weight of the cleaning agent:

1-10% of a surfactant;

5-20% of other auxiliary agents;

20-50% of an organic solvent;

the balance being water;

the surfactant comprises a first nonionic surfactant and a second nonionic surfactant, wherein the first nonionic surfactant is an asymmetric Gemini type alkyl glycoside with glycosyl tertiary amine and alkyl dimethyl tertiary amine as polar heads;

the second nonionic surfactant is at least one of polyoxyethylene ether surfactant and alkanolamide surfactant, the polyoxyethylene ether surfactant is at least one of branched isomeric primary alcohol ether and fatty acid methyl ester polyoxyethylene ether, the branched isomeric primary alcohol ether is at least one of isomeric dodecanol polyoxyethylene ether and isomeric tridecanol polyoxyethylene ether, and the alkanolamide surfactant is at least one of coconut oil alkyl oxalamide and isopropyl alcohol amide;

the mass ratio of the first nonionic surfactant to the second nonionic surfactant is 1:1.8 to 2.2;

the other auxiliary agent is at least one selected from sodium gluconate and sodium silicate.

2. The cleaning agent according to claim 1, wherein the organic solvent is an alcohol solvent.

3. The cleaning agent according to claim 2, wherein the alcohol solvent is at least one selected from the group consisting of a methanolic alcohol solvent, an alkanediol solvent, a polyester polyol solvent and a sugar alcohol solvent.

4. A cleaning agent according to claim 3, wherein the methanolic alcohol solvent is at least one selected from the group consisting of tetrahydrofuran methanol, tetrahydropyran-2-methanol, furan-2, 5-diyl-dimethanol and 2, 5-dimethylol tetrahydrofuran; and/or the number of the groups of groups,

the alkane diol is at least one selected from 1, 3-butanediol, 1, 5-pentanediol, 2-methyl-2, 4-pentanediol, 2-ethyl-1, 3-hexanediol, 1,2, 6-hexanetriol, 1, 9-nonanediol, ethylene glycol, propylene glycol and 2, 3-butanediol; and/or the number of the groups of groups,

the polyester polyol is selected from at least one of butanediol adipate and 1, 6-hexanediol adipate; and/or the number of the groups of groups,

the sugar alcohol is at least one selected from the group consisting of sorbitan, isomannide, isoidide, tetritol, pentitol, heptitol, sorbitol, mannitol, idide and galactitol.

5. The preparation method of the cleaning agent is characterized by comprising the following steps of:

weighing raw materials according to the formula of the cleaning agent as claimed in any one of claims 1 to 4;

and mixing the weighed raw materials.