CN114369867B - Sliding quartz feeding device, czochralski crystal growing furnace and method for improving pulling speed - Google Patents

Sliding quartz feeding device, czochralski crystal growing furnace and method for improving pulling speed Download PDF

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Publication number
CN114369867B
CN114369867B CN202111642123.1A CN202111642123A CN114369867B CN 114369867 B CN114369867 B CN 114369867B CN 202111642123 A CN202111642123 A CN 202111642123A CN 114369867 B CN114369867 B CN 114369867B
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China
Prior art keywords
water
flange
regulation pole
mixture control
altitude mixture
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CN202111642123.1A
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CN114369867A (en
Inventor
王彦娟
丁亚国
梁万亮
马国忠
顾燕滨
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Ningxia Shenhe New Material Technology Co ltd
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Ningxia Shenhe New Material Technology Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The utility model provides a sliding quartz feeding device, includes charging means, altitude mixture control mechanism, the charging means includes a charging section of thick bamboo, flange sets firmly in the upper end of a charging section of thick bamboo, altitude mixture control mechanism includes flange, regulation pole, altitude mixture control ring, flange suit is on the outer wall of charging means, the lower extreme and the flange connection of regulation pole are equipped with the regulation hole on flange, the upper end of regulation pole passes the regulation hole, at the upper end screw in adjusting nut of regulation pole, the regulation pole is the several, suit several altitude mixture control ring on each regulation pole, according to the size specification difference of single crystal furnace, adjusts the operation altitude mixture control ware through increasing or reducing the quantity of altitude mixture control ring, is favorable to being suitable for various furnace types, reduce cost, still provides a czochralski single crystal furnace, still provides a method of improving the crystal pulling rate.

Description

Sliding quartz feeding device, czochralski crystal growing furnace and method for improving pulling speed
Technical Field
The invention relates to the technical field of Czochralski silicon production, in particular to a sliding quartz feeding device, a Czochralski silicon crystal furnace and a method for improving the pulling speed.
Background
In the process of growing single crystals by the Czochralski method, a silicon material is first added into a quartz crucible by a feeder, the silicon material is heated and melted into a melt, and then the single crystals are formed at a certain pulling rate.
The feeders in the prior art have poor single interchangeability, and the feeders with different specifications are required to be configured for the single crystal furnaces with different specifications, so that the cost is not reduced.
Disclosure of Invention
In view of the above, it is necessary to provide a sliding quartz feeding device.
It is also necessary to provide a Czochralski crystal growing furnace.
There is also a need for a method of increasing the pull rate.
The utility model provides a quartzy feeding device of slidingtype, includes charging means, altitude mixture control mechanism, the charging means includes a charging section of thick bamboo, flange sets firmly in the upper end of a charging section of thick bamboo, altitude mixture control mechanism includes flange, regulation pole, altitude mixture control ring, the flange suit is on the outer wall of charging means, the lower extreme and the flange connection of regulation pole are equipped with the regulation hole on flange, the upper end of adjusting the pole passes the regulation hole, at the upper end screw in adjusting nut of adjusting the pole, adjusting nut's diameter is greater than the diameter of regulation hole, the regulation pole is the several, and the circumference equipartition along flange is adjusted to the several pole, and the suit is high adjustment ring on each regulation pole, altitude mixture control ring is located between flange and the flange.
The utility model provides a Czochralski single crystal growing furnace, includes vice furnace body, elevating system and slidingtype quartz feeding device, slidingtype quartz feeding device still includes reinforced jib, toper bottom, elevating system locates the top of vice furnace body, the upper end and the elevating system of reinforced jib are connected, the lower extreme of reinforced jib passes a reinforced section of thick bamboo to be connected with the toper bottom, the toper bottom lid closes in the bottom of a reinforced section of thick bamboo, flange's outer wall and the inner wall connection of vice furnace body.
Preferably, the Czochralski single crystal growing furnace further comprises a main furnace body, a guide cylinder and a water cooling screen, wherein the guide cylinder and the water cooling screen are arranged in the main furnace body, the guide cylinder is positioned below the water cooling screen, and pits are formed in the inner side wall of the water cooling screen so as to improve the lifting speed.
Preferably, the pits are uniformly distributed on the inner side wall of the water cooling screen, the pits are round, and the water cooling screen is a cylinder with a large upper opening and a small lower opening.
Preferably, the pit is oval.
Preferably, the Czochralski crystal growing furnace further comprises a circular sheath, wherein the circular sheath is arranged at the lower end of the water cooling screen, and the circular sheath is made of graphite.
Preferably, the water cooling screen is made of stainless steel.
Preferably, the surface of the water-cooled screen is coated with a coating.
Preferably, the Czochralski single crystal growing furnace comprises a supporting shaft, a tray, a graphite crucible, a quartz crucible, a bottom heater and a side heater, wherein the supporting shaft is arranged at the bottom of the main furnace body, the tray is lifted on the supporting shaft, the graphite crucible is placed on the tray, the quartz crucible is nested in the graphite crucible, the side heater is arranged between the quartz crucible and the side wall of the main furnace body, and the bottom heater is arranged between the quartz crucible and the bottom wall of the main furnace body.
A method for increasing the pulling speed is realized by using a Czochralski single crystal furnace, and the method adopts the Czochralski method to grow single crystals, and keeps the pulling speed at 1.8-2 mm/min in the process of pulling.
Compared with the prior art, the invention has the beneficial effects that:
according to the different size specifications of the single crystal furnace, the operation height of the feeder is adjusted by increasing or reducing the number of the height adjusting rings, so that the feeder is beneficial to being suitable for various furnace types and reducing the cost. The height adjusting ring can replace the threaded fit of the adjusting rod and the connecting flange to adjust the height, so that the problem that the threads of the adjusting rod are easy to damage at high temperature can be solved.
Drawings
Fig. 1 is a front view of the sliding type quartz feeding device.
FIG. 2 is a cross-sectional view of the sliding quartz feed device taken along the A-A direction.
Fig. 3 is an isometric view of the water cooled screen.
Fig. 4 is a schematic structural diagram of the czochralski crystal growing furnace.
In the figure: the feeding device 10, the feeder 11, the feeding cylinder 111, the connecting flange 112, the height adjusting mechanism 12, the fixing flange 121, the adjusting rod 122, the height adjusting ring 123, the feeding boom 13, the conical bottom cover 14, the auxiliary furnace body 20, the lifting mechanism 30, the main furnace body 40, the guide cylinder 50, the water cooling screen 60, the pit 61, the annular sheath 70, the supporting shaft 80, the tray 90, the graphite crucible 100, the quartz crucible 110, the bottom heater 120, and the side heater 130.
Detailed Description
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Referring to fig. 1 to 4, an embodiment of the present invention provides a sliding quartz feeding device 10, which includes a feeder 11 and a height adjusting mechanism 12, wherein the feeder 11 includes a feeding barrel 111 and a connecting flange 112, the connecting flange 112 is fixedly arranged at the upper end of the feeding barrel 111, the height adjusting mechanism 12 includes a fixing flange 121, an adjusting rod 122 and a height adjusting ring 123, the fixing flange 121 is sleeved on the outer wall of the feeder 11, the lower end of the adjusting rod 122 is connected with the fixing flange 121, an adjusting hole is arranged on the connecting flange 112, the upper end of the adjusting rod 122 passes through the adjusting hole, an adjusting nut is screwed in the upper end of the adjusting rod 122, the diameter of the adjusting nut is larger than the diameter of the adjusting hole, the adjusting rods 122 are distributed uniformly along the circumferential direction of the fixing flange 121, the adjusting rods 122 are sleeved with the height adjusting rings 123, and the height adjusting rings 123 are located between the fixing flange 121 and the connecting flange 112.
Compared with the prior art, the invention has the beneficial effects that:
according to different sizes of the single crystal furnace, the operation height of the feeder 11 is adjusted by increasing or decreasing the number of the height adjusting rings 123, which is beneficial to adapting to various furnace types and reducing the cost. The height adjusting ring 123 can replace the screw thread of the adjusting rod 122 to be matched with the connecting flange 112 to adjust the height, so that the problem that the screw thread of the adjusting rod 122 is easy to damage at high temperature can be solved.
Referring to fig. 1 to 4, the embodiment of the invention provides a Czochralski single crystal growing furnace, which comprises an auxiliary furnace body 20, a lifting mechanism 30 and a sliding quartz feeding device 10, wherein the sliding quartz feeding device 10 further comprises a feeding boom 13 and a conical bottom cover 14, the lifting mechanism 30 is arranged at the top of the auxiliary furnace body 20, the upper end of the feeding boom 13 is connected with the lifting mechanism 30, the lower end of the feeding boom 13 passes through a feeding cylinder 111 and is connected with the conical bottom cover 14, the conical bottom cover 14 covers the bottom end of the feeding cylinder 111, and the outer wall of a fixing flange 121 is connected with the inner wall of the auxiliary furnace body 20.
Referring to fig. 1 to 4, further, the czochralski crystal growing furnace further includes a main furnace body 40, a guide cylinder 50 and a water cooling screen 60, the guide cylinder 50 and the water cooling screen 60 are arranged in the main furnace body 40, the guide cylinder 50 is positioned below the water cooling screen 60, and a pit 61 is arranged on the inner side wall of the water cooling screen 60 to increase the lifting speed.
The pit 61 is formed in the inner side wall of the water cooling screen 60, diffuse reflection of the water cooling screen 60 can be increased through the pit 61, heat dissipation area is increased, hot air flows can form vortex at the pit 61, heat transfer is promoted, the temperature is reduced due to combined action of the three aspects, larger temperature gradient is formed, and the requirement of improving the pulling speed is further met. Compared with the prior art, the protrusion can form vortex heat dissipation, and the protrusion is unfavorable for diffuse reflection heat dissipation.
Referring to fig. 1 to 4, further, the pits 61 are uniformly distributed on the inner side wall of the water cooling screen 60, the pits 61 are circular, and the water cooling screen 60 is a cylinder with a large upper opening and a small lower opening.
Referring to fig. 1 to 4, further, the pit 61 is elliptical.
Referring to fig. 1 to 4, further, the czochralski crystal growing furnace further includes a circular ring-shaped sheath 70, the circular ring-shaped sheath 70 is disposed at the lower end of the water cooling screen 60, and the circular ring-shaped sheath 70 is made of graphite.
Because the water-cooling screen 60 is made of stainless steel, the temperature in the main furnace body 40 is above 1000 ℃, the high temperature resistant temperature of stainless steel is above 1000 ℃, the high temperature of the stainless steel is easy to cause high-temperature fusing or bursting of the water-cooling screen 60, therefore, in the prior art, the lower end of the water-cooling screen 60 always needs to keep a certain distance from the silicon melt, the high temperature resistant temperature of the annular sheath 70 reaches 4000 ℃ through installing the annular sheath 70 at the lower end of the water-cooling screen 60, the annular sheath 70 can extend the length of the water-cooling screen 60, so that good temperature gradient in the single crystal furnace is effectively ensured, the thermal refraction of the water-cooling thermal screen is extended, in addition, the lower end of the water-cooling screen 60 in the prior art needs to be above 60mm away from the silicon melt level, otherwise, the water-cooling screen 60 is easy to burst due to expansion, the annular sheath 70 enables the water-cooling screen 60 to be more close to the silicon melt level, and the problem that the water-cooling screen 60 is easy to burst and cannot be close to the silicon melt is solved.
Referring to fig. 1 to 4, further, the water-cooled screen 60 is made of stainless steel.
Referring to fig. 1 to 4, further, the water-cooled screen 60 is surface-coated with a coating.
Referring to fig. 1 to 4, further, the czochralski single crystal growing furnace includes a support shaft 80, a tray 90, a graphite crucible 100, a quartz crucible 110, a bottom heater 120, and a side heater 130, the support shaft 80 is provided at the bottom of the main furnace body 40, the tray 90 is lifted on the support shaft 80, the graphite crucible 100 is placed on the tray 90, the quartz crucible 110 is nested in the graphite crucible 100, the side heater 130 is installed between the quartz crucible 110 and the side wall of the main furnace body 40, and the bottom heater 120 is installed between the quartz crucible 110 and the bottom wall of the main furnace body 40.
Referring to fig. 1 to 4, the embodiment of the invention provides a method for improving the pulling rate, which is realized by using a Czochralski single crystal furnace, wherein the method adopts a Czochralski method to grow single crystals, and the pulling rate is kept at 1.8-2 mm/min in the process of pulling.
It is under the combined action of the pit 61 design of the water cooling screen 60 and the annular sheath 70 design that the lifting speed is increased from 0.9-1.5 mm/min to 1.8-2 mm/min.
In a specific embodiment, a groove is formed at the bottom of the inner side of the quartz crucible 110, and the groove is in a ring shape with the center of the bottom wall of the inner side of the quartz crucible 110 as the center of the circle, so as to increase the oxygen content of the Czochralski single crystal.
The steps in the method of the embodiment of the invention can be sequentially adjusted, combined and deleted according to actual needs.
The modules or units in the device of the embodiment of the invention can be combined, divided and deleted according to actual needs.
The foregoing disclosure is illustrative of the preferred embodiments of the present invention, and is not to be construed as limiting the scope of the invention, as it is understood by those skilled in the art that all or part of the above-described embodiments may be practiced with equivalents thereof, which fall within the scope of the invention as defined by the appended claims.

Claims (7)

1. A Czochralski crystal growing furnace is characterized in that: including vice furnace body, elevating system and slip type quartz feeding device, slip type quartz feeding device includes charging means, altitude mixture control mechanism, the charging means includes reinforced section of thick bamboo, flange sets firmly in the upper end of reinforced section of thick bamboo, altitude mixture control mechanism includes flange, regulation pole, altitude mixture control ring, the flange suit is on the outer wall of charging means, the lower extreme and the fixed flange connection of regulation pole are equipped with the regulation hole on flange, the upper end of regulation pole passes the regulation hole, at the upper end screw in adjusting nut of regulation pole, adjusting nut's diameter is greater than the diameter of regulation hole, the regulation pole is the several, and the several is adjusted along the circumference equipartition of flange, and the several altitude mixture control ring of suit is on each regulation pole, altitude mixture control ring is located between flange and the flange, slip type quartz feeding device still includes reinforced jib, toper bottom, elevating system locates the top of vice furnace body, the upper end and elevating system are connected, the lower extreme of regulation pole passes a section of thick bamboo to be connected with the flange, the diameter of regulation hole is greater than the diameter of regulation hole, the diameter of regulation pole is the diameter of regulation hole, the water-cooled side wall is located at the water-cooled side wall of a circular guide sleeve, the water-cooled side wall is located to the water-cooled side wall, the water-cooled side wall is equipped with the water-cooled down guide sleeve, the water-cooled side wall is equipped with the water-cooled down jacket, the water-cooled side wall is located the water-cooled down jacket, and is equipped with the water-cooled down jacket.
2. The czochralski crystal growing furnace of claim 1, wherein: the pits are uniformly distributed on the inner side wall of the water cooling screen, the pits are round, and the water cooling screen is a cylinder with a large upper opening and a small lower opening.
3. The czochralski crystal growing furnace of claim 1, wherein: the pits are elliptical.
4. The czochralski crystal growing furnace of claim 1, wherein: the water cooling screen is made of stainless steel.
5. The czochralski crystal growing furnace of claim 1, wherein: the surface of the water-cooled screen is coated with a coating.
6. The czochralski crystal growing furnace of claim 1, wherein: the Czochralski single crystal furnace comprises a supporting shaft, a tray, a graphite crucible, a quartz crucible, a bottom heater and a side heater, wherein the supporting shaft is arranged at the bottom of the main furnace body, the tray is lifted on the supporting shaft, the graphite crucible is placed on the tray, the quartz crucible is nested in the graphite crucible, the side heater is arranged between the quartz crucible and the side wall of the main furnace body, and the bottom heater is arranged between the quartz crucible and the bottom wall of the main furnace body.
7. A method for increasing pull rate, implemented using the czochralski crystal growing furnace of claim 1, comprising: the method adopts the Czochralski method to grow single crystals, and keeps the pulling speed at 1.8-2 mm/min in the process of pulling.
CN202111642123.1A 2021-12-29 2021-12-29 Sliding quartz feeding device, czochralski crystal growing furnace and method for improving pulling speed Active CN114369867B (en)

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CN114369867B true CN114369867B (en) 2023-07-04

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Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202175737U (en) * 2011-06-13 2012-03-28 扬州华尔光伏科技有限公司 Secondary feeder of single crystal furnace
CN102828234A (en) * 2011-06-13 2012-12-19 扬州华尔光伏科技有限公司 Secondary feeder of single crystal furnace
CN206721391U (en) * 2017-04-30 2017-12-08 北方民族大学 A kind of feeding device for single crystal furnace for possessing movable protective sleeve
CN209854276U (en) * 2019-05-07 2019-12-27 宁夏旭樱新能源科技有限公司 Quartz feeding device for monocrystalline silicon preparation
CN212316278U (en) * 2020-04-28 2021-01-08 四川晶科能源有限公司 Crystal pulling growth device and monocrystalline silicon production equipment
CN112251808B (en) * 2020-11-03 2024-04-09 晶澳太阳能有限公司 Water-cooling heat shield structure, monocrystalline silicon growth device and monocrystalline silicon growth method
CN214529320U (en) * 2020-12-24 2021-10-29 晶澳太阳能有限公司 Single crystal furnace

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