CN114362724A - Ring oscillator with temperature compensation function - Google Patents
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Abstract
The invention discloses a ring oscillator with temperature compensation function, comprising: the PAPT current generation module is used for outputting a VBG voltage signal to the ICON current generation module and outputting an IPTAT current signal to the compensation current synthesis module, wherein the VBG voltage signal does not change along with temperature, and the IPTAT current signal is in direct proportion to the temperature; the ICON current generation module is connected with the compensation current synthesis module and used for outputting an ICON current signal to the compensation current synthesis module, and the ICON current signal does not change along with the temperature; the compensation current synthesis module is connected with the ring oscillator and used for outputting an ITAIL current signal to the ring oscillator, the ITAIL current signal is provided with temperature compensation, and frequency change caused by temperature change is compensated in the ring oscillator. In the invention, the PTAT current and the constant temperature coefficient current are synthesized to generate a current with a specific temperature coefficient, and the current is used as a current source of the oscillator, so that the frequency change caused by the temperature change can be effectively compensated.
Description
Technical Field
The invention relates to the technical field of analog current oscillators, in particular to a ring oscillator with a temperature compensation function.
Background
With the development of integrated circuit technology and the increasing demand of people on information processing capability, system SOC and data processing chip technology become mainstream. As a clock source of the SOC and the data processing chip, the frequency stability characteristics of the clock source directly affect the application performance of the whole chip. In recent years, conventional three-level ring oscillator is widely applied to SOC chips as a clock source, the oscillation frequency of the SOC chip has a large temperature drift, the frequency stability is greatly influenced by temperature, and the frequency stability is also greatly influenced by power supply voltage. Therefore, it is important to design an oscillator reasonably independent of the supply voltage and temperature.
Disclosure of Invention
The technical purpose is as follows: aiming at the defect that the oscillation frequency of an oscillator in the prior art is influenced by the voltage and the temperature of a power supply, the invention discloses a ring oscillator with a temperature compensation function.
The technical scheme is as follows: in order to achieve the technical purpose, the invention adopts the following technical scheme.
A ring oscillator with a temperature compensation function comprises a PAPT current generation module, an ICON current generation module, a compensation current synthesis module and a ring oscillator;
the PAPT current generation module is connected with the ICON current generation module and the compensation current synthesis module, and is used for outputting a VBG voltage signal to the ICON current generation module and outputting an IPTAT current signal to the compensation current synthesis module, wherein the VBG voltage signal does not change along with temperature, and the IPTAT current signal is in direct proportion to the temperature; the ICON current generation module is connected with the compensation current synthesis module and used for outputting an ICON current signal to the compensation current synthesis module, and the ICON current signal does not change along with the temperature; the compensation current synthesis module is connected with the ring oscillator and used for outputting an ITAIL current signal to the ring oscillator, the ITAIL current signal is provided with temperature compensation, and frequency change caused by temperature change is compensated in the ring oscillator.
Preferably, the PAPT current generating module includes a first self-bias current generating circuit, a second self-bias current generating circuit, an amplifier driving circuit and an output circuit, the first self-bias current generating circuit outputs a first current, the second self-bias current generating circuit outputs a second current, the first self-bias current generating circuit and the second self-bias current generating circuit are connected to the amplifier driving circuit, the input of the amplifier driving circuit is the first current and the second current, and the output is a first driving signal and a second driving signal; the amplifier driving circuit is connected with the output circuit, the input of the output circuit is a first driving signal and a second driving signal, and the output of the output circuit is an IPTAT current signal and a VBG voltage signal.
Preferably, the first self-bias current generating circuit includes a MOS transistor MP0 and a resistor R0, a drain of the MOS transistor MP0 is connected to one end of the resistor R0, the other end of the resistor R0 is grounded, and a drain of the MOS transistor MP0 is connected to a gate thereof to output the first current.
Preferably, the second self-bias current generating circuit includes a MOS transistor MP1 and a resistor R1, a drain of the MOS transistor MP1 is connected to one end of the resistor R1, the other end of the resistor R1 is grounded, and a drain of the MOS transistor MP1 is connected to a gate thereof to output the second current.
Preferably, the amplifier driving circuit comprises MOS transistors MP2 to MP6, MN0, MN1, Q0 and Q1, and the amplifier driving circuit has first and second currents as input and first and second driving signals as output;
the grid of the MOS tube MP2 and the grid of the MOS tube MP3 are connected with a second current, the drain of the MOS tube MP2 is connected with the collector and the base of the triode Q0 and the grid of the MOS tube MP5, the emitter of the triode Q0 is connected with one end of the resistor R2, and the other end of the resistor R2 is grounded; the drain electrode of the MOS tube MP3 is connected with the collector electrode and the base electrode of the triode Q1, and is simultaneously connected with the grid electrode of the MOS tube MP6, the emitter electrode of the triode Q1 is connected with one end of the resistor R3, the emitter electrode of the triode Q1 outputs a second driving signal, and the other end of the resistor R3 is grounded;
the grid electrode of the MOS tube MP4 is connected with a first current, the drain electrode of the MOS tube MP4 is connected with the source electrode of the MOS tube MP5 and the source electrode of the MOS tube MP6, and the drain electrode of the MOS tube MP5 is connected with the drain electrode and the grid electrode of the MOS tube MN0 and the grid electrode of the MOS tube MN 1; the drain of the MOS transistor MP6 is connected to the drain of the MOS transistor MN1, the drain of the MOS transistor MP6 outputs the first drive signal, the source of the MOS transistor MN0 and the source of the MOS transistor MN1 are commonly connected to one end of the resistor R4, and the other end of the resistor R4 is grounded.
Preferably, the output circuit comprises MOS transistors MP7-MP9, MOS transistor MN2 and a triode Q3; the input of the output circuit is a first driving signal and a second driving signal, and the output is an IPTAT current signal and a VBG voltage signal;
the grid electrode of the MOS tube MN2 is connected with a first drive signal, the source electrode of the MOS tube MN2 is connected with a second drive signal, the drain electrode of the MOS tube MN2 is connected with the drain electrode and the grid electrode of the MOS tube MP7, the grid electrode of the MOS tube MP8 and the grid electrode of the MOS tube MP9 are simultaneously connected, the source electrodes of the MOS tube MP7, the MOS tube MP8 and the MOS tube MP9 are connected with a power supply, and the drain electrode of the MOS tube MP8 is connected with one end of the resistor R5 and outputs a VBG voltage signal; the other end of the resistor R5 is connected with the base electrode and the collector electrode of the triode Q3, and the emitter electrode of the triode Q3 is grounded; the drain electrode of the MOS tube MP9 is connected with the output port IPTAT, the output port IPTAT outputs an IPTAT current signal, and the source electrodes of the MOS tubes MP0 to MP9 are connected with a power supply.
Preferably, the ICON current generation module comprises an operational amplifier 0P, MOS, a transistor MN3, a MOS transistor MP10-MP11 and a resistor R6, wherein the MOS transistor MN3 is an NMOS transistor, and the MOS transistor MP10-MP11 is a PMOS transistor; the input of the ICON current generation module is a VBG voltage signal, and the output of the ICON current generation module is an ICON current signal;
the positive input end of the operational amplifier OP is connected with a VBG voltage signal, the negative input end of the operational amplifier OP is connected with one end of a resistor R6 and the source electrode of the MOS tube MN3, the other end of the resistor R6 is grounded, the output end of the operational amplifier OP is connected with the grid electrode of the MOS tube MN3, the drain electrode of the MOS tube MN3 is connected with the drain electrode and the grid electrode of the MOS tube MP10, and is simultaneously connected with the grid electrode of the MOS tube MP 11; the source electrode of the MOS tube MP 10-the MOS tube MP11 is connected with the power supply in common, the drain electrode of the MOS tube MP11 is connected with the output port ICON, and the output port ICON outputs an ICON current signal.
Preferably, the compensation current synthesis module includes a switch signal SB with a bit number of S, B bits of a switch signal with a bit number of B bits, a first mirror image unit, a second mirror image unit and B temperature coefficient adjustment units, the switch signal S is a binary control signal with a bit number of B bits, the bit number of the switch signal SB is equal to the switch signal S, each control signal of the switch signal SB is the control signal of the switch signal S, the first mirror image unit inputs an IPTAT current signal and outputs the IPTAT current signal through a mirror image structure, the second mirror image unit inputs an ICON current signal and outputs the ICON current signal through a mirror image structure, the number of the temperature coefficient adjustment units is equal to the bit number of the switch signal S, and the B-th temperature coefficient adjustment unit inputs an IPTAT current signal, an ICON current signal and a B-th switch signal S, The B-th switching signal SB is more than or equal to 1 and less than or equal to B, the B-th switching signal S is used for controlling whether an input IPTAT current signal is conducted or not, the B-th switching signal SB is used for controlling whether an input ICON current signal is conducted or not, the temperature coefficient adjusting unit is used for outputting the controlled current signal according to the switching signal S and the switching signal SB, the first mirror image unit, the second mirror image unit and the B temperature coefficient adjusting units are connected with an output port ITAIL together, and the output port ITAIL outputs an ITAIL current signal.
Preferably, the first mirror image unit and the second mirror image unit have the same structure, and current mirror image is realized through a pair of MOS tubes; every temperature coefficient regulating unit includes 4 MOS pipes, the gate connection IPTAT current signal of first MOS pipe, the ICON current signal is connected to the gate of second MOS pipe, the source electrode of first MOS pipe and the source electrode of second MOS pipe link to each other, the drain electrode of first MOS pipe is connected with the source electrode of third MOS pipe, the one bit signal of switch signal S is connected to the gate of third MOS pipe, the output port ITAIL is connected to the drain electrode of third MOS pipe, the drain electrode of second MOS pipe is connected with the source electrode of fourth MOS pipe, the one bit signal of switch signal SB is connected to the gate of fourth MOS pipe, the output port ITAIL is connected to the drain electrode of fourth MOS pipe. The on-off of the third MOS tube and the fourth MOS tube is controlled through a switching signal S and a switching signal SB, so that the temperature coefficient adjustment of an ITAIL current signal is realized; the temperature coefficient adjustment of the ITAIL current signal is controlled by adjusting the width-length ratio between the first MOS tubes and the width-length ratio between the second MOS tubes of the B temperature coefficient adjusting units.
Preferably, the ring oscillator includes MOS transistors MP12 and MP13, and an odd number of inverter delay units, where MOS transistors MP12 and MP13 are both PMOS transistors; the input of the ring oscillator is an ITAIL current signal;
the grid and the drain of the MOS transistor MP12 are connected with an ITAIL current signal together and are connected with the grid of the MOS transistor MP13 at the same time, the drain of the MOS transistor MP13 outputs a VRING signal, the VRING signal is connected with the power supplies of all inverter delay units, odd number of inverter delay units are connected in an end-to-end manner, namely the output of one inverter delay unit is connected with the input of the next inverter delay unit to form a ring structure.
Has the advantages that: in the invention, the PTAT current and the constant temperature coefficient current are synthesized to generate a current with a specific temperature coefficient, the current is used as a current source of the oscillator, the frequency change caused by the temperature change can be effectively compensated, in addition, the current superposition is used for compensation, and the frequency of the oscillator is not influenced by the fluctuation of the power supply voltage.
Drawings
FIG. 1 is a general block diagram of the present invention;
FIG. 2 is a circuit diagram of an embodiment of a PAPT current generation module;
FIG. 3 is a circuit diagram of an ICON current generating module in an embodiment;
FIG. 4 is a circuit diagram of an embodiment of a compensation current combining module;
FIG. 5 is a circuit diagram of a ring oscillator of an embodiment;
FIG. 6 is a waveform diagram of simulation of the entire circuit in the embodiment.
Detailed Description
The ring oscillator with temperature compensation function according to the present invention will be further explained and explained with reference to the drawings and the embodiments.
As shown in fig. 1, a ring oscillator with temperature compensation function includes a PAPT current generation module, an ICON current generation module, a compensation current synthesis module, and a ring oscillator;
the PAPT current generation module is connected with the ICON current generation module and the compensation current synthesis module, and is used for outputting a VBG voltage signal to the ICON current generation module and outputting an IPTAT current signal to the compensation current synthesis module, wherein the VBG voltage signal does not change along with temperature, and the IPTAT current signal is in direct proportion to the temperature; the ICON current generation module is connected with the compensation current synthesis module and used for outputting an ICON current signal to the compensation current synthesis module, and the ICON current signal does not change along with the temperature; the compensation current synthesis module is connected with the ring oscillator and used for outputting an ITAIL current signal to the ring oscillator, the ITAIL current signal is provided with temperature compensation, and frequency change caused by temperature change is compensated in the ring oscillator.
In the invention, the IPTAT current signal output by the PAPT current generation module is in direct proportion to the temperature, the temperature coefficient is higher, and if the current with the fixed temperature coefficient is independently adopted as the current source of the ring oscillator, the overcompensation effect can occur. The temperature coefficient required for compensation does not need to be as large as the temperature coefficient of the IPTAT current, and therefore the temperature coefficient of the cold stub needs to be reduced. The ICON current signal output by the ICON current generation module is irrelevant to the temperature, and the temperature compensation effect cannot be achieved if the current is simply adopted as a current source of the ring oscillator. The ITAIL current signal output by the compensation current synthesis module has temperature compensation and moderate temperature coefficient, and the temperature coefficient of the ITAIL current signal can be adjusted by the proportion of IPTAT current and ICON current. The ring oscillator adopts an ITAIL current signal as a current source, so that temperature compensation can be effectively realized, and an over-compensation effect cannot occur. The temperature coefficient referred to in the present invention means: the ratio of the variation of current with temperature to the current at room temperature.
Example (b):
as shown in fig. 2, the PAPT current generation module includes a first self-bias current generation circuit, a second self-bias current generation circuit, an amplifier driving circuit, and an output circuit, where the first self-bias current generation circuit outputs a first current, the second self-bias current generation circuit outputs a second current, the first self-bias current generation circuit and the second self-bias current generation circuit are connected to the amplifier driving circuit, inputs of the amplifier driving circuit are the first current and the second current, and outputs are a first driving signal and a second driving signal; the amplifier driving circuit is connected with the output circuit, the input of the output circuit is a first driving signal and a second driving signal, and the output of the output circuit is an IPTAT current signal and a VBG voltage signal;
the first self-bias current generating circuit comprises a MOS tube MP0 and a resistor R0, wherein the source electrode of the MOS tube MP0 is connected with a power supply, the drain electrode of the MOS tube MP0 is connected with one end of the resistor R0, the other end of the resistor R0 is grounded, and the drain electrode of the MOS tube MP0 is connected with the grid electrode to output a first current;
the second self-bias current generating circuit comprises a MOS tube MP1 and a resistor R1, wherein the source electrode of the MOS tube MP1 is connected with a power supply, the drain electrode of the MOS tube MP1 is connected with one end of the resistor R1, the other end of the resistor R1 is grounded, and the drain electrode of the MOS tube MP1 is connected with the grid electrode to output a second current;
the amplifier driving circuit comprises MOS transistors MP 2-MP 6, MN0, MN1, a triode Q0 and a triode Q1, wherein the input of the amplifier driving circuit is a first current and a second current, and the output of the amplifier driving circuit is a first driving signal and a second driving signal;
the grid of the MOS tube MP2 and the grid of the MOS tube MP3 are connected with a second current, namely the grid of the MOS tube MP1, the drain of the MOS tube MP2 is connected with the collector and the base of the triode Q0 and the grid of the MOS tube MP5, the emitter of the triode Q0 is connected with one end of the resistor R2, and the other end of the resistor R2 is grounded; the drain electrode of the MOS transistor MP3 is connected with the collector electrode and the base electrode of the triode Q1, and is simultaneously connected with the grid electrode of the MOS transistor MP6, the emitter electrode of the triode Q1 is connected with one end of the resistor R3, the emitter electrode of the triode Q1 outputs a second driving signal, namely the emitter electrode of the triode Q1 is connected with the source electrode of the MOS transistor MN2, and the other end of the resistor R3 is grounded;
the gate of the MOS transistor MP4 is connected to the first current, that is, connected to the gate of the MOS transistor MP0, the drain of the MOS transistor MP4 is connected to the source of the MOS transistor MP5 and the source of the MOS transistor MP6, and the drain of the MOS transistor MP5 is connected to the drain and the gate of the MOS transistor MN0 and to the gate of the MOS transistor MN 1; the drain of the MOS transistor MP6 is connected to the drain of the MOS transistor MN1, the drain of the MOS transistor MP6 outputs the first drive signal, that is, the drain of the MOS transistor MP6 is connected to the gate of the MOS transistor MN2, the source of the MOS transistor MN0 and the source of the MOS transistor MN1 are commonly connected to one end of the resistor R4, and the other end of the resistor R4 is grounded;
the output circuit comprises MOS tubes MP7-MP9, an MOS tube MN2 and a triode Q3; the input of the output circuit is a first driving signal and a second driving signal, and the output is an IPTAT current signal and a VBG voltage signal;
the gate of the MOS transistor MN2 is connected to a first drive signal, that is, the drain of the MOS transistor MP6, the source of the MOS transistor MN2 is connected to a second drive signal, that is, the emitter of the transistor Q1, the drain of the MOS transistor MN2 is connected to the drain and the gate of the MOS transistor MP7, and is simultaneously connected to the gate of the MOS transistor MP8 and the gate of the MOS transistor MP9, the sources of the MOS transistor MP7, the MOS transistor MP8, and the MOS transistor MP9 are connected to the power supply, and the drain of the MOS transistor MP8 is connected to one end of the resistor R5, and simultaneously outputs a VBG voltage signal; the other end of the resistor R5 is connected with the base electrode and the collector electrode of the triode Q3, and the emitter electrode of the triode Q3 is grounded; the drain electrode of the MOS tube MP9 is connected with the output port IPTAT, the output port IPTAT outputs an IPTAT current signal, and the source electrodes of the MOS tubes MP0 to MP9 are connected with a power supply.
In the embodiment, MOS tubes MP0-MP9 are PMOS tubes, MOS tubes MN0-MN2 are NMOS tubes, and triodes Q0-Q3 are NPN-type triodes; the sources of the MOS tubes MP0-MP4 and MP7-MP9 are connected with a power supply, and in some embodiments, the power supply voltage is 2.5V.
In this embodiment, the following are set: the width-length ratio of MOS tubes MP1, MP2 and MP3 is 1: 10: 1, and the area ratio of triodes Q0, Q1 and Q3 is 1: 12: 1.
The MOS transistor MP0 and the resistor R0 form a first self-bias current generating circuit, and the current is used as a mirror current source of the MOS transistor MP4, namely, the current provides bias voltage for an amplifier in the amplifier driving circuit; meanwhile, the MOS transistor MP1 and the resistor R1 form a second self-bias current generating circuit, which is used as a mirror current source for the MOS transistor MP2 and the MOS transistor MP3, i.e., provide bias for other circuits in the amplifier driving circuit.
The MOS transistors MP4-MP6, MN0-MN1, and the resistor R4 form an amplifier, and drive the MOS transistor MN2 in the output circuit, and the amplifier stably operates so that the voltage at the node a is the same as the voltage at the node B, where the voltage at the node a is the gate power supply of the MOS transistor MP5, and the voltage at the node B is the gate power supply of the MOS transistor MP6, that is, VA is VB.
VbeRefers to the voltage of base electrode and emitter electrode of triode, and VA voltage is Vbe(Q0) (V of transistor Q0)be) And the sum of the voltage drops of the resistor R2, i.e. VA-Vbe(Q0)+VR2(ii) a The relation of the width-length ratio of the MOS tubes MP2 and MP3 is 10: 1, assuming that the source-drain current of MP2 is 10. I and the source-drain current of MP1 is I, then
Wherein, IsFor PN junction reverse off current, threeThermal voltage of pole tube Q0
k is Boltzmann's constant, T is temperature, 300k at room temperature (27 ℃), q is an electronic charge, and the value of the thermal voltage is about 26mV at room temperature. The voltage drop of the resistor R2 is V R210 · I · R2, therefore
Since VA is VB due to the circuit configuration of the amplifier (i.e., the operational amplifier) in the amplifier driving circuit, VA is VB
In addition, the voltage VB of the node B is V of a transistor Q1beAnd the voltage drop across resistor R3. Since the area of the transistor Q1 is 12 times that of the transistor Q0, and the size of the MOS transistor MP3 is 1/10 of the MOS transistor MP2, the MOS transistor Q1 has the same size as the transistor Q0, so that the MOS transistor MP 3526 has the same size as the transistor Q2
The voltage drop across resistor R3 is:
the current through R3 according to ohm's law can be:
the current flowing through the MOS transistor MN2 can be obtained according to the KCL theorem (kirchhoff current theorem), namely the source-drain current of the MOS transistor MN2 is
Since the source-drain current of the MOS transistor MN2 is equal to the source-drain current of the MOS transistor MP7, the source-drain current of the MOS transistor MP7 is:
wherein VtProportional to temperature, in particular, VtIncreasing proportionally with increasing temperature. MOS pipe MP7 and MOS pipe MP9 are in mirror image relation, and MOS pipe MP9 mirrors current output of MOS pipe MP7 to obtain current IPTAT which is proportional to temperature, namely current IPTAT with positive temperature coefficient.
The voltage VBG which does not change along with the temperature adopts positive temperature coefficient voltage generated on a resistor R5 by using current IPTAT with positive temperature coefficient and voltage V with negative temperature coefficientbe(Q3) is added, i.e. VBG ═ Ids(MP8)·R3+Vbe(Q3), wherein, Ids(MP8)The source-drain current of the MOS transistor MP8 is a current with a positive temperature coefficient.
As shown in fig. 3, the ICON current generating module includes an operational amplifier OP, a MOS transistor MN3, a MOS transistor MP10-MP11, and a resistor R6, wherein the MOS transistor MN3 is an NMOS transistor, and the MOS transistors MP10-MP11 are PMOS transistors; the input of the ICON current generation module is a VBG voltage signal, and the output of the ICON current generation module is an ICON current signal;
the positive input end of the operational amplifier OP is connected with a VBG voltage signal, the negative input end of the operational amplifier OP is connected with one end of a resistor R6 and the source electrode of the MOS tube MN3, the other end of the resistor R6 is grounded, the output end of the operational amplifier OP is connected with the grid electrode of the MOS tube MN3, the drain electrode of the MOS tube MN3 is connected with the drain electrode and the grid electrode of the MOS tube MP10, and is simultaneously connected with the grid electrode of the MOS tube MP 11; the source electrode of the MOS tube MP 10-the MOS tube MP11 is connected with the power supply in common, the drain electrode of the MOS tube MP11 is connected with the output port ICON, and the output port ICON outputs an ICON current signal.
The operational amplifier OP makes the voltage of the input pin VBG equal to the source voltage of the MOS transistor MN3, so the source voltage of the MOS transistor MN3 does not change with the temperature change, and therefore the current flowing through the resistor R6 does not change with the temperature change, the MOS transistor MP10 and the MOS transistor MP11 are mirrored, the flowing currents of the MOS transistor MP10 and the resistor R6 are equal, and the current of the drain mirror resistor R6 of the MOS transistor MP11 obtains an ICON current signal which does not change with the temperature.
The compensating current synthesis module comprises a switch signal SB with S, B bit digits of a switch signal S with B bit digits, a first mirror image unit, a second mirror image unit and B temperature coefficient adjusting units, wherein the switch signal S is a binary control signal with the B bit digits, the bit digits of the switch signal SB are equal to the switch signal S, each bit of the switch signal SB are the control signal negation of the switch signal S, the first mirror image unit inputs IPTAT current signals and outputs IPTAT current signals through a mirror image structure, the second mirror image unit inputs ICON current signals and outputs ICON current signals through a mirror image structure, the number of the temperature coefficient adjusting units is equal to the bit digits of the switch signal S, the input of the B temperature coefficient adjusting unit is the IPTAT current signals, the ICON current signals, the B-th switch signal S and the B-th switch signal SB, b is more than or equal to 1 and less than or equal to B, a B-th switch signal S is used for controlling whether an input IPTAT current signal is conducted, a B-th switch signal SB is used for controlling whether an input ICON current signal is conducted, a temperature coefficient adjusting unit is used for outputting a controlled current signal according to the switch signal S and the switch signal SB, the first mirror image unit, the second mirror image unit and the B temperature coefficient adjusting units are connected with an output port ITAIL together, and the output port ITAIL outputs an ITAIL current signal.
The first mirror image unit and the second mirror image unit have the same structure, and current mirror image is realized through a pair of MOS tubes; every temperature coefficient regulating unit includes 4 MOS pipes, the gate connection IPTAT current signal of first MOS pipe, the ICON current signal is connected to the gate of second MOS pipe, the source electrode of first MOS pipe and the source electrode of second MOS pipe link to each other, the drain electrode of first MOS pipe is connected with the source electrode of third MOS pipe, the one bit signal of switch signal S is connected to the gate of third MOS pipe, the output port ITAIL is connected to the drain electrode of third MOS pipe, the drain electrode of second MOS pipe is connected with the source electrode of fourth MOS pipe, the one bit signal of switch signal SB is connected to the gate of fourth MOS pipe, the output port ITAIL is connected to the drain electrode of fourth MOS pipe. The on-off of the third MOS tube and the fourth MOS tube is controlled by the switching signal S and the switching signal SB, so that the temperature coefficient adjustment of the ITAIL current signal is realized. In addition, the temperature coefficient adjustment of the ITAIL current signal is controlled by adjusting the width-length ratio between the first MOS tubes and the width-length ratio between the second MOS tubes of the B temperature coefficient adjusting units.
As shown in fig. 4, in this embodiment, the compensation current synthesis module includes a switching signal S with a 4-bit number, a switching signal SB with a 4-bit number, a first mirror unit, a second mirror unit, and 4 temperature coefficient adjustment units, where the switching signal S is less than 3: 0 > to control the gate of the MOS transistor MN 17-the gate of the MOS transistor MN20 (corresponding to the fourth MOS transistor in the 4 temperature coefficient adjustment units) to control the on/off of the MOS transistor, and the width-to-length ratio of the MOS transistor MN 5-the MOS transistor MN10 (the MOS transistor MN5 corresponds to one MOS transistor in the first mirror unit, and the MOS transistor MN 6-the MOS transistor MN9 corresponds to the first MOS transistor in the 4 temperature coefficient adjustment units) is 12: 4: 1: 2: 4: 8. The switching signal SB is less than 3: 0, the switching signal SB is more than or equal to 8: 4: 2: 1: 17: 24, the switching signal SB controls the grid electrode of the MOS tube MN 24-the MOS tube MN21 (corresponding to the third MOS tube in the 4 temperature coefficient adjusting units) to control the on and off of the grid electrode, and the width-length ratio of the MOS tube MN 11-the MOS tube MN16 (the MOS tube MN16 corresponds to one MOS tube in the first mirroring unit, and the MOS tube MN 15-the MOS tube MN12 corresponds to the second MOS tube in the 4 temperature coefficient adjusting units) is 8: 4: 2: 1: 17: 24.
In the embodiment, the current input into the IPTAT is 8uA-16uA within the range of-40 to 125 degrees, the current at 40 degrees is 12uA, the current input into the ICON is 24uA which does not change along with the temperature,
when the switching signal S is 1000, ITAIL is 36uA at 40 °, 32uA at-40 °, and 40uA at 125 °.
When the switching signal S is 0000, ITAIL is 36uA at a temperature of 40 °, ITAIL is 34.6uA at a temperature of-40 °, and ITAIL is 37.3uA at a temperature of 125 °.
When the switching signal S is 1111 °, ITAIL is 36uA at 40 °, ITAIL is 29.67uA at-40 °, and ITAIL is 42.33uA at 125 °.
The temperature coefficient of the final output current can be adjusted according to the simulation result or the actual requirement by adjusting the value of the switching signal S less than 3: 0, so that the requirements of different processes and different oscillation frequencies are met. The specific circuit design is not limited to the parameters, and designers can adjust the sizes of IPTAT and ICON input currents and the proportion of the tube according to different process characteristics and different oscillation frequencies, even increase a switch bit to adjust the temperature coefficient, so as to achieve the optimal design.
The ITAIL current signal realizes the superposition of an IPTAT current signal and an ICON current signal, and the temperature coefficient of the output ITAIL current signal can be adjusted by the sum of the ICON current signal which does not change along with the temperature and the IPTAT current signal with higher temperature coefficient so as to adapt to the compensation effect of the current type oscillator and avoid the occurrence of the over-compensation condition. The temperature compensation of the invention does not greatly increase the power consumption of the circuit.
The invention adopts IPTAT current with fixed temperature coefficient and ICON current which is irrelevant to temperature to synthesize and generate ITAIL current with specific temperature coefficient as the current source of the oscillator, which can effectively compensate the frequency change caused by temperature change.
The ring oscillator comprises an MOS tube MP12, an MOS tube MP13 and odd inverter delay units; the input of the ring oscillator is an ITAIL current signal; the grid and the drain of the MOS transistor MP12 are connected with an ITAIL current signal together and are connected with the grid of the MOS transistor MP13 at the same time, the drain of the MOS transistor MP13 outputs a VRING signal, the VRING signal is connected with the power supplies of all inverter delay units, odd number of inverter delay units are connected in an end-to-end manner, namely the output of one inverter delay unit is connected with the input of the next inverter delay unit to form a ring structure. In some embodiments, as shown in fig. 5, the ring oscillator includes a MOS transistor MP12, a MOS transistor MP13, and three inverter delay units INV0-INV2, where the MOS transistor MP12 and the MOS transistor MP13 are both PMOS transistors; the ring oscillator adopts a current type ring oscillator, and the frequency deviation caused by the power supply voltage can be effectively reduced by adopting the current type ring oscillator. The input of the ring oscillator is an ITAIL current signal;
the grid and the drain of the MOS transistor MP12 are connected with an ITAIL current signal together and are connected with the grid of the MOS transistor MP13 at the same time, the drain of the MOS transistor MP13 outputs a VRING signal, the VRING signal is connected with the power supplies of the three inverter delay units, the output of the inverter INV0 is connected with the input of the inverter INV1, the output of the inverter INV1 is connected with the input of the inverter INV2, the output of the inverter INV2 is connected with the input of the inverter INV0, and the sources of the MOS transistor MP12 and the MOS transistor MP13 are connected with the power supplies.
Three inverters are cascaded to form a ring-shaped ring oscillator, the power supply of the inverter is a VRING signal, the MOS tube MP13 mirrors the input current of the MOS tube MP12, namely an ITAIL current signal, and the ITAIL current signal is output to the three inverters. The oscillation frequency is mainly related to the current, the current is completely mirrored and is not influenced by the power supply voltage, when the source voltages of the MOS tube MP12 and the MOS tube MP13 are changed, the output current of the MOS tube MP13 is not influenced, so that the oscillation frequency is not influenced, namely, the current superposition is adopted for compensation, and the oscillator frequency is not influenced by the fluctuation of the power supply voltage.
The circuit designed by the invention is already applied to an optical transmitter SOC system, as shown in figure 6, a simulation result of a specific circuit is given, the IPTAT current increases with the increase of the temperature, the range is 8-17 uA, the ICON does not change with the temperature, the value of the ICON is 24uA, after the IPTAT current and the ICON are added, the size of the current changing with the temperature is unchanged, but after the total current increases, the temperature coefficient of the current is reduced, namely the current temperature coefficient of the ITAIL current is reduced, and a designer can adjust the proportion of the IPTAT and the ICON through simulation according to the characteristics of different process transistors to obtain the oscillation frequency not changing with the temperature. The actual test results show that the frequency variation is only 0.3% in the temperature range-40-125 deg..
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.
Claims (10)
1. The utility model provides a take ring oscillator of temperature compensation function which characterized in that: the system comprises a PAPT current generation module, an ICON current generation module, a compensation current synthesis module and a ring oscillator;
the PAPT current generation module is connected with the ICON current generation module and the compensation current synthesis module, and is used for outputting a VBG voltage signal to the ICON current generation module and outputting an IPTAT current signal to the compensation current synthesis module, wherein the VBG voltage signal does not change along with temperature, and the IPTAT current signal is in direct proportion to the temperature; the ICON current generation module is connected with the compensation current synthesis module and used for outputting an ICON current signal to the compensation current synthesis module, and the ICON current signal does not change along with the temperature; the compensation current synthesis module is connected with the ring oscillator and used for outputting an ITAIL current signal to the ring oscillator, the ITAIL current signal is provided with temperature compensation, and frequency change caused by temperature change is compensated in the ring oscillator.
2. The ring oscillator with temperature compensation function according to claim 1, wherein: the PAPT current generation module comprises a first self-bias current generation circuit, a second self-bias current generation circuit, an amplifier driving circuit and an output circuit, wherein the first self-bias current generation circuit outputs a first current, the second self-bias current generation circuit outputs a second current, the first self-bias current generation circuit and the second self-bias current generation circuit are connected with the amplifier driving circuit, the input of the amplifier driving circuit is the first current and the second current, and the output of the amplifier driving circuit is a first driving signal and a second driving signal; the amplifier driving circuit is connected with the output circuit, the input of the output circuit is a first driving signal and a second driving signal, and the output of the output circuit is an IPTAT current signal and a VBG voltage signal.
3. The ring oscillator with temperature compensation function according to claim 2, wherein: the first self-bias current generating circuit comprises a MOS transistor MP0 and a resistor R0, wherein the drain electrode of the MOS transistor MP0 is connected with one end of the resistor R0, the other end of the resistor R0 is grounded, and the drain electrode of the MOS transistor MP0 is connected with the grid electrode to output a first current.
4. The ring oscillator with temperature compensation function according to claim 2, wherein: the second self-bias current generating circuit comprises a MOS transistor MP1 and a resistor R1, wherein the drain of the MOS transistor MP1 is connected with one end of the resistor R1, the other end of the resistor R1 is grounded, and the drain of the MOS transistor MP1 is connected with the gate to output a second current.
5. The ring oscillator with temperature compensation function according to claim 2, wherein: the amplifier driving circuit comprises MOS transistors MP 2-MP 6, MN0, MN1, a triode Q0 and a triode Q1, wherein the input of the amplifier driving circuit is a first current and a second current, and the output of the amplifier driving circuit is a first driving signal and a second driving signal;
the grid of the MOS tube MP2 and the grid of the MOS tube MP3 are connected with a second current, the drain of the MOS tube MP2 is connected with the collector and the base of the triode Q0 and the grid of the MOS tube MP5, the emitter of the triode Q0 is connected with one end of the resistor R2, and the other end of the resistor R2 is grounded; the drain electrode of the MOS tube MP3 is connected with the collector electrode and the base electrode of the triode Q1, and is simultaneously connected with the grid electrode of the MOS tube MP6, the emitter electrode of the triode Q1 is connected with one end of the resistor R3, the emitter electrode of the triode Q1 outputs a second driving signal, and the other end of the resistor R3 is grounded;
the grid electrode of the MOS tube MP4 is connected with a first current, the drain electrode of the MOS tube MP4 is connected with the source electrode of the MOS tube MP5 and the source electrode of the MOS tube MP6, and the drain electrode of the MOS tube MP5 is connected with the drain electrode and the grid electrode of the MOS tube MN0 and the grid electrode of the MOS tube MN 1; the drain of the MOS transistor MP6 is connected to the drain of the MOS transistor MN1, the drain of the MOS transistor MP6 outputs the first drive signal, the source of the MOS transistor MN0 and the source of the MOS transistor MN1 are commonly connected to one end of the resistor R4, and the other end of the resistor R4 is grounded.
6. The ring oscillator with temperature compensation function according to claim 2, wherein: the output circuit comprises MOS tubes MP7-MP9, an MOS tube MN2 and a triode Q3; the input of the output circuit is a first driving signal and a second driving signal, and the output is an IPTAT current signal and a VBG voltage signal;
the grid electrode of the MOS tube MN2 is connected with a first drive signal, the source electrode of the MOS tube MN2 is connected with a second drive signal, the drain electrode of the MOS tube MN2 is connected with the drain electrode and the grid electrode of the MOS tube MP7, the grid electrode of the MOS tube MP8 and the grid electrode of the MOS tube MP9 are simultaneously connected, the source electrodes of the MOS tube MP7, the MOS tube MP8 and the MOS tube MP9 are connected with a power supply, and the drain electrode of the MOS tube MP8 is connected with one end of the resistor R5 and outputs a VBG voltage signal; the other end of the resistor R5 is connected with the base electrode and the collector electrode of the triode Q3, and the emitter electrode of the triode Q3 is grounded; the drain electrode of the MOS tube MP9 is connected with the output port IPTAT, the output port IPTAT outputs an IPTAT current signal, and the source electrodes of the MOS tubes MP0 to MP9 are connected with a power supply.
7. The ring oscillator with temperature compensation function according to claim 1, wherein: the ICON current generation module comprises an operational amplifier OP, an MOS tube MN3, an MOS tube MP10-MP11 and a resistor R6, wherein the MOS tube MN3 is an NMOS tube, and the MOS tube MP10-MP11 is a PMOS tube; the input of the ICON current generation module is a VBG voltage signal, and the output of the ICON current generation module is an ICON current signal;
the positive input end of the operational amplifier OP is connected with a VBG voltage signal, the negative input end of the operational amplifier OP is connected with one end of a resistor R6 and the source electrode of the MOS tube MN3, the other end of the resistor R6 is grounded, the output end of the operational amplifier OP is connected with the grid electrode of the MOS tube MN3, the drain electrode of the MOS tube MN3 is connected with the drain electrode and the grid electrode of the MOS tube MP10, and is simultaneously connected with the grid electrode of the MOS tube MP 11; the source electrode of the MOS tube MP 10-the MOS tube MP11 is connected with the power supply in common, the drain electrode of the MOS tube MP11 is connected with the output port ICON, and the output port ICON outputs an ICON current signal.
8. The ring oscillator with temperature compensation function according to claim 1, wherein: the compensation current synthesis module comprises a switch signal SB with S, B bit digits of a switch signal S with B bit digits, a first mirror image unit, a second mirror image unit and B temperature coefficient adjusting units, wherein the switch signal S is a binary control signal with the B bit digits, the bit digits of the switch signal SB are equal to the switch signal S, each bit of the control signal of the switch signal SB is the control signal negation of the switch signal S, the IPTAT current signal is input into the first mirror image unit and is output as the IPTAT current signal through a mirror image structure, the ICON current signal is input into the second mirror image unit and is output as the ICON current signal through a mirror image structure, the number of the temperature coefficient adjusting units is equal to the bit digits of the switch signal S, the input of the B-th temperature coefficient adjusting unit is the IPTAT current signal, the ICON current signal, the B-th switch signal S and the B-th switch signal SB, b is more than or equal to 1 and less than or equal to B, a B-th switch signal S is used for controlling whether an input IPTAT current signal is conducted, a B-th switch signal SB is used for controlling whether an input ICON current signal is conducted, a temperature coefficient adjusting unit is used for outputting a controlled current signal according to the switch signal S and the switch signal SB, the first mirror image unit, the second mirror image unit and the B temperature coefficient adjusting units are connected with an output port ITAIL together, and the output port ITAIL outputs an ITAIL current signal.
9. The ring oscillator with temperature compensation function according to claim 8, wherein: the first mirror image unit and the second mirror image unit have the same structure, and current mirror image is realized through a pair of MOS (metal oxide semiconductor) tubes; each temperature coefficient adjusting unit comprises 4 MOS tubes, wherein the grid electrode of a first MOS tube is connected with an IPTAT current signal, the grid electrode of a second MOS tube is connected with an ICON current signal, the source electrode of the first MOS tube is connected with the source electrode of the second MOS tube, the drain electrode of the first MOS tube is connected with the source electrode of a third MOS tube, the grid electrode of the third MOS tube is connected with a one-bit signal of a switch signal S, the drain electrode of the third MOS tube is connected with an output port ITAIL, the drain electrode of the second MOS tube is connected with the source electrode of a fourth MOS tube, the grid electrode of the fourth MOS tube is connected with a one-bit signal of a switch signal SB, and the drain electrode of the fourth MOS tube is connected with the output port ITAIL; the on-off of the third MOS tube and the fourth MOS tube is controlled through a switching signal S and a switching signal SB, so that the temperature coefficient adjustment of an ITAIL current signal is realized; the temperature coefficient adjustment of the ITAIL current signal is controlled by adjusting the width-length ratio between the first MOS tubes and the width-length ratio between the second MOS tubes of the B temperature coefficient adjusting units.
10. The ring oscillator with temperature compensation function according to claim 1, wherein: the ring oscillator comprises an MOS tube MP12, an MOS tube MP13 and odd inverter delay units; the input of the ring oscillator is an ITAIL current signal;
the grid and the drain of the MOS transistor MP12 are connected with an ITAIL current signal together and are connected with the grid of the MOS transistor MP13 at the same time, the drain of the MOS transistor MP13 outputs a VRING signal, the VRING signal is connected with the power supplies of all inverter delay units, odd number of inverter delay units are connected in an end-to-end manner, namely the output of one inverter delay unit is connected with the input of the next inverter delay unit to form a ring structure.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20080061894A1 (en) * | 2006-08-25 | 2008-03-13 | Kazuhisa Raita | Ring oscillator and semiconductor integrated circuit and electronic device including the same |
| CN101753115A (en) * | 2008-10-09 | 2010-06-23 | 盛群半导体股份有限公司 | Temperature compensation circuit and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20080061894A1 (en) * | 2006-08-25 | 2008-03-13 | Kazuhisa Raita | Ring oscillator and semiconductor integrated circuit and electronic device including the same |
| CN101753115A (en) * | 2008-10-09 | 2010-06-23 | 盛群半导体股份有限公司 | Temperature compensation circuit and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN118100816A (en) * | 2024-04-22 | 2024-05-28 | 基合半导体（宁波）有限公司 | Operational amplifier structure and integrated circuit |
| CN118100816B (en) * | 2024-04-22 | 2024-07-12 | 基合半导体（宁波）有限公司 | Operational amplifier structure and integrated circuit |
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