CN114362719B - Monolithic integrated acoustic wave filter array and preparation method thereof - Google Patents
Monolithic integrated acoustic wave filter array and preparation method thereof Download PDFInfo
- Publication number
- CN114362719B CN114362719B CN202111466267.6A CN202111466267A CN114362719B CN 114362719 B CN114362719 B CN 114362719B CN 202111466267 A CN202111466267 A CN 202111466267A CN 114362719 B CN114362719 B CN 114362719B
- Authority
- CN
- China
- Prior art keywords
- support
- substrate
- acoustic wave
- support substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 250
- 230000004048 modification Effects 0.000 claims abstract description 29
- 238000012986 modification Methods 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 155
- 238000005468 ion implantation Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 235000019687 Lamb Nutrition 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 9
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 239000002356 single layer Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 5
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 239000004793 Polystyrene Substances 0.000 claims description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 4
- -1 polydimethylsiloxane Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229920002223 polystyrene Polymers 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000007888 film coating Substances 0.000 claims 1
- 238000009501 film coating Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 9
- 238000010897 surface acoustic wave method Methods 0.000 abstract description 4
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000002513 implantation Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The application relates to a monolithic integrated acoustic wave filter array and a preparation method thereof, wherein the monolithic integrated acoustic wave filter array comprises: a support substrate; the support substrate comprises a plurality of support areas, the plurality of support areas comprise at least one first support area, and a part of the support substrate corresponding to the first support area is subjected to local or whole modification treatment; a piezoelectric layer located on the upper surface of the support substrate; each of the plurality of support regions is capable of exciting a preset acoustic wave mode and/or a preset acoustic wave frequency on a corresponding region surface (e.g., within the piezoelectric layer), and the plurality of support regions correspond to a plurality of different preset acoustic wave modes and/or preset acoustic wave frequencies; an electrode array on the upper surface of the piezoelectric layer; the electrode array comprises a plurality of electrodes, and the plurality of electrodes are in one-to-one correspondence with the plurality of support areas. Therefore, the monolithic integration of the multi-band acoustic device can be realized, and the problems of large volume, complex process, high cost and the like caused by the cooperative work of the surface acoustic wave resonator, the bulk acoustic wave resonator and the like in actual demands are solved.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a monolithic integrated acoustic wave filter array and a preparation method thereof.
Background
The advent of 5G has had a tremendous impact on the filter industry. On the one hand, the new frequency band is increased, the 5G frequency spectrum is divided into FR1 and FR2, the FR1 is 450MHz to 6GHz, and the current main frequency band; on the other hand, the requirements for the performance of filters (e.g., high frequency, low loss, etc.) are continuously increasing. The SAW filter integrates low insertion loss and good inhibition performance, has large bandwidth and small volume, but is only suitable for applications below 2GHz due to the acoustic surface wave sound velocity and the electrode preparation limitation. Above 2GHz BAW filters have further performance advantages. Therefore, current mobile phone communication usually adopts SAW and BAW to cooperatively meet the frequency band requirement, so that the problems of low integration level, high process cost, complex design and preparation process and the like are caused. The radio frequency devices with different working frequency bands can be integrated, and a modularized and integrated radio frequency solution is important.
Disclosure of Invention
The embodiment of the application provides a monolithic integrated acoustic wave filter array and a preparation method thereof, which can realize monolithic integration of a multi-band acoustic device and solve the problems of large volume, low integration level, complex process, complex design, high cost and the like caused by cooperative work of a surface acoustic wave resonator, a bulk acoustic wave resonator and the like in actual demands.
In one aspect, embodiments of the present application provide a monolithically integrated acoustic wave filter array, including:
a support substrate; the support substrate comprises a plurality of support areas, the plurality of support areas comprise at least one first support area, and a part of the support substrate corresponding to the first support area is subjected to local or whole modification treatment;
a piezoelectric layer located on the upper surface of the support substrate; each of the plurality of support areas can excite a preset sound wave mode and/or a preset sound wave frequency in the corresponding piezoelectric layer, and the plurality of support areas correspond to a plurality of different preset sound wave modes and/or preset sound wave frequencies;
an electrode array on the upper surface of the piezoelectric layer; the electrode array comprises a plurality of electrodes, and the plurality of electrodes are in one-to-one correspondence with the plurality of support areas.
Optionally, the support substrate is a multilayer structure comprising at least two substrate layers, the at least two substrate layers being made of different materials.
Optionally, the at least two substrate layers include a first substrate layer and a second substrate layer stacked in sequence, the first substrate layer being located on an upper surface of the second substrate layer; the upper surface of the first substrate layer is a piezoelectric layer;
the portion of the first substrate layer located in the first support region is modified.
Optionally, a portion of the second substrate layer located in the first support region is provided with a first cavity structure, and a top of the first cavity structure is in contact with the first substrate layer.
Optionally, the support substrate has a single-layer structure;
and partial supporting substrates corresponding to the first supporting areas are subjected to partial modification treatment.
Optionally, the portion of the support substrate corresponding to the first support region includes a modified layer and an unmodified layer; the depth of the modified layer is a preset depth;
the unmodified layer is provided with a second cavity structure, and the top of the second cavity structure is contacted with the modified layer.
Optionally, the preset acoustic wave mode corresponding to the first supporting substrate includes at least one of shear wave, lamb wave and telescopic wave.
Optionally, the plurality of support regions further comprises at least one second support region;
and a part of the supporting substrate corresponding to the second supporting region is provided with a third cavity structure, and the top of the third cavity structure is contacted with the bottom of the piezoelectric layer.
Optionally, the plurality of support regions further comprises at least one third support region;
and a fourth cavity structure is arranged in the part of the support substrate corresponding to the third support region.
Optionally, each electrode of the plurality of electrodes is an interdigital electrode or a planar electrode.
Optionally, the structures of the support substrates of the portions corresponding to at least two support regions in the plurality of support regions are the same, and the electrode characteristics between at least two electrodes corresponding to at least two support regions are different from each other.
Optionally, a bottom electrode is disposed on a lower surface of the piezoelectric layer contacting the support substrate.
Optionally, the material of the support substrate includes at least one of silicon, silicon oxide, silicon carbide, sapphire, diamond-like film, gallium arsenide, quartz, lithium niobate, lithium tantalate, aluminum nitride, gallium oxide, zinc oxide, benzocyclobutene, polyimide, polydimethylsiloxane, polystyrene.
Optionally, the material of the piezoelectric layer includes at least one of lithium niobate, potassium niobate, lithium tantalate, aluminum nitride, quartz, or zinc oxide.
In another aspect, an embodiment of the present application provides a method for preparing a monolithically integrated acoustic wave filter array, including:
obtaining a supporting substrate; the support substrate comprises a plurality of support areas, the plurality of support areas comprise at least one first support area, and a part of the support substrate corresponding to the first support area is subjected to local or whole modification treatment;
forming a piezoelectric layer on a support substrate; each of the plurality of support areas can excite a preset sound wave mode and/or a preset sound wave frequency in the corresponding piezoelectric layer, and the plurality of support areas correspond to a plurality of different preset sound wave modes and/or preset sound wave frequencies;
forming an electrode array on the piezoelectric layer; the electrode array comprises a plurality of electrodes, and the plurality of electrodes are in one-to-one correspondence with the plurality of support areas.
Optionally, obtaining the support substrate includes:
acquiring an initial supporting substrate;
modifying the preset area of the initial support substrate to modify the substrate material in the preset area to obtain a modified support substrate; the first support region includes a predetermined region.
Optionally, the modifying treatment is performed on a preset area of the initial support substrate, including:
and carrying out local ion implantation on the upper surface of the initial support substrate.
Optionally, performing local ion implantation on the upper surface of the initial support substrate includes:
ion implantation is performed on different regions of the upper surface of the initial support substrate based on different ion implantation conditions.
Optionally, before the local ion implantation is performed on the upper surface of the initial support substrate, the method further includes:
and (3) performing coating treatment on the upper surface of the initial support substrate.
Optionally, after forming the electrode array on the piezoelectric layer, the method further comprises:
etching holes are formed in the piezoelectric layer to the upper surface of the support substrate or the inside of the support substrate;
a cavity structure is formed on the surface of the support substrate or inside the support substrate by ICP or dry etching.
Optionally, the initial support substrate is a multilayer structure; acquiring an initial support substrate, comprising:
obtaining a bottom substrate;
forming a cavity structure on the surface of the bottom substrate by ICP or dry etching;
and forming at least one upper substrate on the bottom substrate with the cavity structure to obtain an initial support substrate.
Optionally, after the initial support substrate is obtained, before the modification treatment is performed on the preset area of the initial support substrate, the method further includes:
forming a sacrificial layer inside the initial support substrate;
after forming the electrode array on the piezoelectric layer, the method further comprises:
the sacrificial layer is removed to form a cavity structure within the support substrate.
The monolithic integrated acoustic wave filter array and the preparation method thereof have the following beneficial effects:
the monolithically integrated acoustic wave filter array comprises: a support substrate; the support substrate comprises a plurality of support areas, the plurality of support areas comprise at least one first support area, and a part of the support substrate corresponding to the first support area is subjected to local or whole modification treatment; a piezoelectric layer located on the upper surface of the support substrate; each of the plurality of support areas can excite a preset sound wave mode and/or a preset sound wave frequency in the corresponding piezoelectric layer, and the plurality of support areas correspond to a plurality of different preset sound wave modes and/or preset sound wave frequencies; an electrode array on the upper surface of the piezoelectric layer; the electrode array comprises a plurality of electrodes, and the plurality of electrodes are in one-to-one correspondence with the plurality of support areas. Therefore, the monolithic integration of the multi-band acoustic device can be realized, and the problems of large volume, low integration level, complex process, complex design, high cost and the like caused by the cooperative work of the surface acoustic wave resonator, the bulk acoustic wave resonator and the like in actual demands are solved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIGS. 1-9 are schematic cross-sectional views of various monolithically integrated acoustic wave filter arrays provided in embodiments of the present application;
FIG. 10 is a perspective view of a monolithically integrated acoustic wave filter array according to an embodiment of the present application;
FIG. 11 is a diagram of simulation results provided by an embodiment of the present application;
fig. 12 is a schematic flow chart of a method for preparing a monolithically integrated acoustic wave filter array according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present application based on the embodiments herein.
It should be noted that the terms "first," "second," and the like in the description and claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that embodiments of the present application described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or server that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed or inherent to such process, method, article, or apparatus, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Referring to fig. 1, fig. 1 is a schematic cross-sectional view of a monolithically integrated acoustic wave filter array according to an embodiment of the present application, where the monolithically integrated acoustic wave filter array includes:
a support substrate 100; the support substrate 100 includes a plurality of support regions, and the plurality of support regions includes at least one first support region, and a portion of the support substrate corresponding to the first support region is subjected to a partial or whole modification treatment;
a piezoelectric layer 200 positioned on the upper surface of the support substrate 100; each of the plurality of support areas can excite a preset sound wave mode and/or a preset sound wave frequency in the corresponding piezoelectric layer, and the plurality of support areas correspond to a plurality of different preset sound wave modes and/or preset sound wave frequencies;
an electrode array on the upper surface of the piezoelectric layer 200; the electrode array includes a plurality of electrodes 300, and the plurality of electrodes 300 are in one-to-one correspondence with the plurality of support regions.
In the embodiment of the application, the local modification includes uniform modification with a certain depth or nonuniform modification aiming at the patterned area by carrying out local or whole modification treatment on the support substrate, so that excitation of a preset sound wave mode and/or preset sound wave frequency can be realized; and different supporting areas in the same supporting substrate are arranged on the surfaces of the corresponding areas, such as piezoelectric layers, so that different preset sound wave modes and/or preset sound wave frequencies can be excited, and the monolithic integration of the multi-band acoustic device is realized, and the problems of large volume, low integration level, complex process, complex design, high cost and the like caused by the cooperative work of the surface acoustic wave resonator, the bulk acoustic wave resonator and the like in actual demands can be solved.
Alternatively, the support substrate 100 is a multilayer structure including at least two substrate layers made of different materials.
Specifically, as shown in fig. 2, the support substrate 100 includes a first substrate layer 101 and a second substrate layer 102 stacked in this order, the first substrate layer 101 being located on an upper surface of the second substrate layer 102; the upper surface of the first substrate layer 101 is a piezoelectric layer 200; the portion of the first substrate layer 101 located in the first support region is subjected to a modification treatment; the second substrate layer 102 may be a solid state structure.
Alternatively, specifically, as shown in fig. 3, the support substrate 100 includes a first substrate layer 101 and a second substrate layer 102 stacked in this order, the first substrate layer 101 being located on an upper surface of the second substrate layer 102; the upper surface of the first substrate layer 101 is a piezoelectric layer 200; the portion of the first substrate layer 101 located in the first support region is subjected to a modification treatment; the portion of the second substrate layer 102 located in the first support region is provided with a first cavity structure 1021, the top of the first cavity structure 1021 being in contact with the first substrate layer 101.
The first substrate layer 101 and the second substrate layer 102 are made of different materials, the first substrate layer 101 may be a high sound velocity layer, and sound velocity propagating in the high sound velocity layer is greater than sound velocity of sound waves propagating in the piezoelectric layer, so that sound velocity of sound waves in the piezoelectric layer can be improved to a certain extent, and thus, operating frequency of the device can be improved.
As shown in fig. 2 and fig. 3, the portion of the first substrate layer 101 located in the first supporting area is subjected to modification treatment, where the modification treatment may include a treatment mode of ion beam implantation, that is, ion implantation is performed to make the implanted ions enter the first substrate layer 101, and the lattice structure of the first substrate layer 101 is changed by using ion implantation, recombination, and rebinding, so as to implement regulation and control of multiple parameters such as density, elastic coefficient, and piezoelectric coefficient of the first substrate layer 101, where the regulation and control may be single-coefficient transformation or integral transformation of a coefficient matrix. In practical application, the method can realize the regulation and control of the frequency and bandwidth of the sound wave through modification treatment according to the needs, and has the effects of improving the Q value of the device, improving heat dissipation, improving temperature compensation, enhancing the mechanical stability of the device, enhancing the power capacity of the device and the like.
Alternatively, the support substrate 100 is a single-layer structure, i.e., the support substrate 100 is made of a single material; and the partial supporting substrate corresponding to the first supporting region is subjected to local modification treatment, so that the conductivity is regulated and controlled.
Specifically, as shown in fig. 4, the support substrate 100 has a single-layer structure, and a portion of the support substrate corresponding to the first support region includes a modified layer 1001 and an unmodified layer 1002; the depth of the modified layer 1001 is a preset depth; unmodified layer 1002 is a solid state structure.
Alternatively, specifically, as shown in fig. 5, the support substrate 100 has a single-layer structure, and a portion of the support substrate corresponding to the first support region includes a modified layer 1001 and an unmodified layer 1002; the depth of the modified layer 1001 is a preset depth; the unmodified layer 1002 is provided with a second cavity structure 10021, the top of the second cavity structure 10021 being in contact with the modified layer 1001.
As shown in fig. 4 and fig. 5, the portion of the support substrate 100 located in the first support region is subjected to local modification treatment, where the modification treatment may be an ion beam implantation treatment, and here, by controlling the ion implantation depth, the implanted ions enter a preset depth of the support substrate 100 to implement local modification, and the modification layer 1001 is the modified portion.
In the above four specific embodiments, the structures of the supporting substrates corresponding to the first supporting regions are different, but the first supporting regions may excite at least one acoustic mode of rayleigh, shear wave, lamb wave and extensional wave in the corresponding piezoelectric layer.
Specifically, the monolithically integrated acoustic wave filter array may also include the structure of the portion of the support substrate corresponding to the first support region in fig. 2-5.
Optionally, the plurality of support regions further comprises at least one second support region; and a part of the supporting substrate corresponding to the second supporting region is provided with a third cavity structure, and the top of the third cavity structure is contacted with the bottom of the piezoelectric layer.
In this embodiment, by the third cavity structure of the support substrate, propagation of the acoustic wave can be localized in the piezoelectric layer, and the frequency of the acoustic wave excited on the piezoelectric layer corresponding to the second support region can be increased.
Specifically, as shown in fig. 6, the support substrate 100 has a multilayer structure; the support substrate 100 comprises a first substrate layer 101 and a second substrate layer 102 which are stacked in sequence, wherein the part of the first substrate layer 101 located in the second support region is hollowed out to form a third cavity structure 1011, and the top of the third cavity structure 1011 is contacted with the bottom of the piezoelectric layer 200; the second substrate layer 102 is untreated and is a solid, solid-state structure.
Alternatively, specifically, as shown in fig. 7, the support substrate 100 has a single-layer structure; the portion of the support substrate 100 located in the second support region is provided with a third cavity structure 1003, and the top of the third cavity structure 1003 is in contact with the bottom of the piezoelectric layer 200.
In the two specific embodiments, the structures of the supporting substrates corresponding to the second supporting regions are different, but the second supporting regions can excite at least one acoustic mode of shear wave, lamb wave and high-order lamb wave in the corresponding piezoelectric layers.
Specifically, the monolithically integrated acoustic wave filter array may include both the structures of the portion of the support substrate corresponding to the second support region in fig. 6 and 7.
Optionally, the plurality of support regions further comprises at least one third support region; and a fourth cavity structure is arranged in the part of the support substrate corresponding to the third support region.
In this embodiment, by the fourth cavity structure of the supporting substrate, propagation of the acoustic wave can be limited to the upper layer of the supporting substrate, downward leakage of the acoustic wave capability can be prevented, and the frequency of the acoustic wave excited on the piezoelectric layer corresponding to the third supporting region can be increased.
Specifically, as shown in fig. 8, the support substrate 100 has a multilayer structure; the support substrate 100 includes a first substrate layer 101 and a second substrate layer 102 stacked in order, and a portion of the first substrate layer 101 located in the third support region is untreated and is a solid structure; the portion of the second substrate layer 102 located in the third support region is partially hollowed out to form a fourth cavity structure 1022.
Alternatively, specifically, as shown in fig. 9, the support substrate 100 has a single-layer structure; the portion of the support substrate 100 located in the third support region is provided with a fourth cavity structure 1004 inside.
In this specific embodiment, the structures of the supporting substrates corresponding to the third supporting regions are different, but the third supporting regions can excite at least one acoustic mode of shear waves and lamb waves in the corresponding piezoelectric layers.
Specifically, the monolithically integrated acoustic wave filter array may include both the structures of the portion of the support substrate corresponding to the third support region in fig. 8 and 9.
Optionally, each electrode of the plurality of electrodes is an interdigital electrode; or after the support substrate is modified or the bottom electrode is embedded under the piezoelectric layer, that is, the electrode on the surface of the piezoelectric layer corresponding to the first support area may be a planar electrode, where the piezoelectric layer can excite the bulk acoustic wave.
Wherein, the planar electrode refers to the adjacent planar electrode which is coplanar.
Optionally, the structures of the support substrates of the portions corresponding to at least two support regions in the plurality of support regions are the same, and the electrode characteristics between at least two electrodes corresponding to at least two support regions are different from each other.
Wherein the electrode features include at least one of electrode type, period, rotation angle, material.
In this embodiment, when the structures of the support substrates corresponding to the two support regions are identical, in order to excite different acoustic frequencies, so as to achieve monolithic integration of the multiband acoustic wave device, the two electrodes corresponding to the two support regions may be adjusted so that the two electrodes have different electrode characteristics.
Alternatively, the lower surface of the piezoelectric layer 200 contacting the support substrate 100 is provided with a bottom electrode.
Optionally, the material of the support substrate 100 includes at least one of silicon, silicon oxide, silicon carbide, sapphire, diamond-like film, gallium arsenide, quartz, lithium niobate, lithium tantalate, aluminum nitride, gallium oxide, zinc oxide, benzocyclobutene, polyimide, polydimethylsiloxane, polystyrene.
Specifically, the support substrate 100 is a multilayer structure; as shown in fig. 2, the support substrate 100 includes a first substrate layer 101 and a second substrate layer 102 stacked in this order, and the material of the first substrate layer 101 includes at least one of silicon, silicon oxide, silicon carbide, sapphire, diamond-like film, gallium arsenide, quartz, lithium niobate, lithium tantalate, aluminum nitride, gallium oxide, zinc oxide, benzocyclobutene, polyimide, polydimethylsiloxane, polystyrene; the material of the second substrate layer 102 includes at least one of silicon, silicon oxide, silicon carbide, sapphire, diamond-like film, gallium arsenide, quartz, lithium niobate, lithium tantalate, aluminum nitride, gallium oxide, zinc oxide.
Optionally, the material of the piezoelectric layer 200 includes at least one of lithium niobate, potassium niobate, lithium tantalate, aluminum nitride, quartz, or zinc oxide.
In the above embodiments, the predetermined acoustic wave modes excited under different supporting substrate structures exhibit different acoustic velocity and electromechanical coupling coefficient characteristics. And the excited acoustic wave mode has a better propagation direction, for example, when the piezoelectric film is X-cut lithium niobate, the propagation direction of the shear wave mode forms 10-15 degrees with the +Y axis of the array, and the propagation direction of the lamb wave mode forms 30-50 degrees with the +Y axis of the array.
One specific monolithically integrated acoustic wave filter array embodiment is provided below. As shown in fig. 10, the support substrate 100 is a multilayer structure including a first substrate layer 101 and a second substrate layer 102, wherein the second substrate layer 102 is a Si substrate, and the first substrate layer 101 is a SiC thin film; the piezoelectric layer 200 is X-cut LiNbO 3 (LN) film; the plurality of electrodes 300 are all interdigital electrodes; the support substrate 100 includes 8 support regions, wherein,
the structures of the supporting substrates of the supporting areas 1 and the supporting areas 2 are the same, and the rotation angles of the electrodes corresponding to the supporting areas 1 and the supporting areas 2 are different; the different rotation angles of the electrodes can select a stronger sound wave mode in a specific direction; the preset acoustic wave modes excited by the support region 1 and the support region 2 are respectively horizontal shear wave and symmetric lamb wave, as shown in (a) of fig. 11, the horizontal shear wave corresponding to the support region 1 has a frequency of 3425MHz, and the electromechanical coupling coefficient is that of16.0%; as shown in fig. 11 (b), the symmetric lamb wave corresponding to the support region 2 has a frequency of 2275MHz and an electromechanical coupling coefficient31.6%;
the supporting area 3 and the supporting area 4 are the same in structure of the supporting substrate, and are provided with a third cavity structure 1011, and the corresponding electrode rotation angles are different, namely, the acoustic wave modes with different frequency bandwidth performances are selectively excited; as shown in fig. 11 (c), taking the supporting area 3 as an example, because the piezoelectric layer is suspended, the air acoustic impedance is extremely small, and besides the basic mode, the high-order lamb wave can be excited, which cannot be achieved by the solid supporting (areas 1 and 2), the excited preset acoustic wave mode comprises a horizontal shear wave and a high-order lamb wave, and the frequency corresponding to the high-order lamb wave is 12.5GHz;
the supporting area 5 and the supporting area 6 have the same structure of the supporting substrate, and are respectively provided with a fourth cavity structure 1022, and the corresponding electrode rotation angles are different; the preset acoustic wave modes excited by the support region 5 and the support region 6 are respectively horizontal shear wave and symmetric lamb wave, as shown in (d) of fig. 11, the horizontal shear wave corresponding to the support region 5 has a frequency of 3140MHz and an electromechanical coupling coefficient40.1%; as shown in FIG. 11 (e), the symmetrical lamb wave corresponding to the support region 6 has a frequency of 4985MHz and an electromechanical coupling coefficient +.>22.3%;
the first substrate layer 101 corresponding to the supporting area 7 is modified, and the second substrate layer 102 is solid; the first substrate layer 101 corresponding to the supporting area 8 is modified, and the second substrate layer 102 is provided with a first cavity structure 1021; as shown in fig. 11 (f), the support region 7 and the support region 8 are each capable of exciting horizontal shear waves, but the acoustic frequencies corresponding to the two are different;
in the embodiment, the resonance frequency and the resonance bandwidth can be regulated and controlled by carrying out local/overall modification and setting of the cavity structure on the support substrate; the excitation frequency band of the monolithic integrated acoustic wave filter array provided by the embodiment can cover 750MHz-20GHz, and the electromechanical coupling coefficient can cover 1% to 60%.
In summary, the monolithic integrated acoustic wave filter array provided by the embodiment of the application performs preparation of multiple acoustic wave devices on the same supporting substrate, can realize excitation of an acoustic wave mode in a wide frequency band and a wide bandwidth range, and can effectively realize monolithic integration of a multi-band resonator and a filter.
As shown in fig. 12, the embodiment of the application further provides a method for preparing a monolithically integrated acoustic wave filter array, which includes the following steps:
in step S1201, a support substrate is acquired; the support substrate comprises a plurality of support areas, the plurality of support areas comprise at least one first support area, and a part of the support substrate corresponding to the first support area is subjected to local or whole modification treatment.
In step S1203, a piezoelectric layer is formed on a support substrate; each of the plurality of support regions is capable of exciting a preset acoustic wave mode and/or a preset acoustic wave frequency in the corresponding piezoelectric layer, and the plurality of support regions correspond to a plurality of different preset acoustic wave modes and/or preset acoustic wave frequencies.
In step S1205, an electrode array is formed on the piezoelectric layer; the electrode array comprises a plurality of electrodes, and the plurality of electrodes are in one-to-one correspondence with the plurality of support areas.
Optionally, the step of obtaining the support substrate may include the following steps: acquiring an initial supporting substrate; modifying the preset area of the initial support substrate to modify the substrate material in the preset area to obtain a modified support substrate; the first support region includes a predetermined region.
Optionally, the modifying the preset area of the initial support substrate may include: and carrying out local ion implantation on the upper surface of the initial support substrate.
In particular, the ionic species include, but are not limited to, hydrogen, helium, carbon, nitrogen, oxygen, silicon, boron, phosphorus, iron, aluminum, zinc, cobalt, tin, nickel.
Optionally, the performing local ion implantation on the upper surface of the initial support substrate may include: ion implantation is performed on different regions of the upper surface of the initial support substrate based on different ion implantation conditions.
The ion implantation conditions include ion species, implantation dose, and implantation energy, among others.
Optionally, before the local ion implantation is performed on the upper surface of the initial support substrate, the preparation method further includes: and (3) performing coating treatment on the upper surface of the initial support substrate.
Specifically, in order to make the modified material be located at the top of the whole support substrate, the surface of the initial support substrate is required to be coated, so that the material modification uniformly occurs in the middle range of the Gaussian distribution of ion implantation, and after the ion implantation, the coating is removed.
Optionally, after forming the electrode array on the piezoelectric layer in order to form each cavity structure in a specific region, the preparation method further includes: etching holes are formed in the piezoelectric layer to the upper surface of the support substrate or the inside of the support substrate; a cavity structure is formed on the surface of the support substrate or inside the support substrate by ICP or dry etching.
Optionally, the initial support substrate is a multilayer structure; the obtaining an initial support substrate includes:
obtaining a bottom substrate; the underlying substrate may be the second substrate layer 102 shown in fig. 3;
forming a cavity structure on the surface of the bottom substrate by ICP or dry etching; the cavity structure may be the first cavity structure 1021 in fig. 3;
and forming at least one upper substrate on the bottom substrate with the cavity structure to obtain an initial support substrate. The upper substrate may be the first substrate layer 101 shown in fig. 3.
Optionally, after the initial support substrate is obtained, before the modification treatment is performed on the preset area of the initial support substrate, the preparation method further includes:
forming a sacrificial layer inside the initial support substrate;
after forming the electrode array on the piezoelectric layer, the method further comprises:
the sacrificial layer is removed to form a cavity structure within the support substrate.
The preparation method of the embodiment of the application and the embodiment of the monolithically integrated acoustic wave filter array are based on the same application conception.
It should be noted that: the foregoing sequence of the embodiments of the present application is only for describing, and does not represent the advantages and disadvantages of the embodiments. And the foregoing description has been directed to specific embodiments of this specification. Other embodiments are within the scope of the following claims. In some cases, the actions or steps recited in the claims can be performed in a different order than in the embodiments and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.
In this specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments. In particular, for the apparatus embodiments, since they are substantially similar to the method embodiments, the description is relatively simple, and reference is made to the description of the method embodiments in part.
The foregoing description of the preferred embodiments of the present application is not intended to limit the invention to the particular embodiments of the present application, but to limit the scope of the invention to the particular embodiments of the present application.
Claims (22)
1. A monolithically integrated acoustic wave filter array comprising:
a support substrate (100); the support substrate (100) comprises a plurality of support areas, the plurality of support areas comprise at least one first support area, and a part of the support substrate (100) corresponding to the first support area is subjected to partial or whole modification treatment;
a piezoelectric layer (200) located on the upper surface of the support substrate (100); each of the plurality of support regions is capable of exciting a preset acoustic wave mode and/or a preset acoustic wave frequency in a corresponding piezoelectric layer (200), the plurality of support regions corresponding to a plurality of different preset acoustic wave modes and/or preset acoustic wave frequencies;
an array of electrodes (300) located on the upper surface of the piezoelectric layer (200); the electrode (300) array includes a plurality of electrodes (300), the plurality of electrodes (300) being in one-to-one correspondence with the plurality of support regions.
2. The monolithically integrated acoustic wave filter array according to claim 1, wherein the support substrate (100) is a multilayer structure comprising at least two substrate layers, the at least two substrate layers being made of different materials.
3. The monolithically integrated acoustic wave filter array of claim 2 wherein the at least two substrate layers comprise a first substrate layer and a second substrate layer stacked in sequence, the first substrate layer being located on an upper surface of the second substrate layer; the upper surface of the first substrate layer is the piezoelectric layer (200);
the portion of the first substrate layer located in the first supporting area is modified.
4. The monolithically integrated acoustic wave filter array of claim 3 wherein,
the part of the second substrate layer, which is positioned in the first supporting area, is provided with a first cavity structure, and the top of the first cavity structure is in contact with the first substrate layer.
5. The monolithically integrated acoustic wave filter array according to claim 1, wherein the support substrate (100) is of a single layer structure;
and a part of the supporting substrate (100) corresponding to the first supporting area is subjected to local modification treatment.
6. The monolithically integrated acoustic wave filter array of claim 5, wherein the portion of the support substrate (100) corresponding to the first support region comprises a modified layer and an unmodified layer; the depth of the modified layer is preset;
the unmodified layer is provided with a second cavity structure, and the top of the second cavity structure is in contact with the modified layer.
7. The monolithically integrated acoustic wave filter array according to any of claims 1-6, wherein the predetermined acoustic wave mode corresponding to the support substrate (100) comprises at least one of shear wave, lamb wave, and extensional wave.
8. The monolithically integrated acoustic wave filter array of claim 1 wherein the plurality of support regions further comprises at least one second support region;
and a part of the support substrate (100) corresponding to the second support region is provided with a third cavity structure, and the top of the third cavity structure is contacted with the bottom of the piezoelectric layer (200).
9. The monolithically integrated acoustic wave filter array of claim 1 wherein the plurality of support regions further comprises at least one third support region;
and a fourth cavity structure is arranged in the part of the support substrate (100) corresponding to the third support region.
10. The monolithically integrated acoustic wave filter array of claim 1, wherein each electrode (300) of the plurality of electrodes (300) is an interdigital electrode (300) or a planar electrode (300).
11. The monolithically integrated acoustic wave filter array according to claim 1, wherein the structures of the partial support substrates (100) corresponding to at least two of the plurality of support regions are identical, and the characteristics of the electrodes (300) between at least two electrodes (300) corresponding to the at least two support regions are different from each other.
12. The monolithically integrated acoustic wave filter array according to claim 1, wherein a lower surface of the piezoelectric layer (200) in contact with the support substrate (100) is provided with a bottom electrode (300).
13. The monolithically integrated acoustic wave filter array of claim 1, wherein the material of the support substrate (100) comprises at least one of silicon, silicon oxide, silicon carbide, sapphire, diamond-like film, gallium arsenide, quartz, lithium niobate, lithium tantalate, aluminum nitride, gallium oxide, zinc oxide, benzocyclobutene, polyimide, polydimethylsiloxane, polystyrene.
14. The monolithically integrated acoustic wave filter array according to claim 1, wherein the material of the piezoelectric layer (200) comprises at least one of lithium niobate, potassium niobate, lithium tantalate, aluminum nitride, quartz, or zinc oxide.
15. The preparation method of the monolithically integrated acoustic wave filter array is characterized by comprising the following steps of:
obtaining a supporting substrate; the support substrate comprises a plurality of support areas, the plurality of support areas comprise at least one first support area, and a part of the support substrate corresponding to the first support area is subjected to local or whole modification treatment;
forming a piezoelectric layer on the support substrate; each of the plurality of support regions is capable of exciting a preset acoustic wave mode and/or a preset acoustic wave frequency in the corresponding piezoelectric layer, and the plurality of support regions correspond to a plurality of different preset acoustic wave modes and/or preset acoustic wave frequencies;
forming an electrode array on the piezoelectric layer; the electrode array comprises a plurality of electrodes, and the plurality of electrodes are in one-to-one correspondence with the plurality of support areas.
16. The method of manufacturing according to claim 15, wherein the obtaining a support substrate comprises:
acquiring an initial supporting substrate;
modifying the preset area of the initial support substrate to modify the substrate material of the preset area to obtain a modified support substrate; the first support region includes the preset region.
17. The method of manufacturing according to claim 16, wherein the modifying the predetermined region of the initial support substrate comprises:
and carrying out local patterning ion implantation on the upper surface of the initial support substrate.
18. The method of claim 17, wherein the locally implanting ions into the upper surface of the initial support substrate comprises:
and carrying out ion implantation on different areas of the upper surface of the initial support substrate based on different ion implantation conditions.
19. The method of manufacturing according to claim 17 or 18, wherein before the locally ion implanting the upper surface of the initial support substrate, further comprising:
and carrying out film coating treatment on the upper surface of the initial support substrate.
20. The method of manufacturing according to claim 15, wherein after the forming of the electrode array on the piezoelectric layer, the method further comprises:
etching holes are formed in the piezoelectric layer to the upper surface of the supporting substrate or the inside of the supporting substrate;
and forming a cavity structure on the surface of the support substrate or in the support substrate by ICP or dry etching.
21. The method of manufacturing according to claim 16, wherein the initial support substrate is a multilayer structure; the obtaining an initial support substrate includes:
obtaining a bottom substrate;
forming a cavity structure on the surface of the bottom substrate by ICP or dry etching;
and forming at least one upper substrate on the bottom substrate with the cavity structure to obtain the initial support substrate.
22. The method of manufacturing according to claim 16, wherein after the initial support substrate is obtained, before the modification treatment is performed on the predetermined area of the initial support substrate, the method further comprises:
forming a sacrificial layer inside the initial support substrate;
after the forming of the electrode array on the piezoelectric layer, the method further comprises:
and removing the sacrificial layer to form a cavity structure in the support substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111466267.6A CN114362719B (en) | 2021-12-03 | 2021-12-03 | Monolithic integrated acoustic wave filter array and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111466267.6A CN114362719B (en) | 2021-12-03 | 2021-12-03 | Monolithic integrated acoustic wave filter array and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114362719A CN114362719A (en) | 2022-04-15 |
| CN114362719B true CN114362719B (en) | 2024-04-05 |
Family
ID=81097675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111466267.6A Active CN114362719B (en) | 2021-12-03 | 2021-12-03 | Monolithic integrated acoustic wave filter array and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114362719B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114793101B (en) * | 2022-04-24 | 2023-06-16 | 武汉敏声新技术有限公司 | Lamb wave resonator |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111817678A (en) * | 2020-07-03 | 2020-10-23 | 中国科学院上海微系统与信息技术研究所 | Monolithic hybrid integrated acoustic resonator array and preparation method thereof |
| WO2021196725A1 (en) * | 2020-03-31 | 2021-10-07 | 中芯集成电路（宁波）有限公司 | Thin-film piezoelectric acoustic wave filter and manufacturing method therefor |
-
2021
- 2021-12-03 CN CN202111466267.6A patent/CN114362719B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021196725A1 (en) * | 2020-03-31 | 2021-10-07 | 中芯集成电路（宁波）有限公司 | Thin-film piezoelectric acoustic wave filter and manufacturing method therefor |
| CN111817678A (en) * | 2020-07-03 | 2020-10-23 | 中国科学院上海微系统与信息技术研究所 | Monolithic hybrid integrated acoustic resonator array and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114362719A (en) | 2022-04-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111817678B (en) | Monolithic hybrid integrated acoustic resonator array and preparation method thereof | |
| US11705885B2 (en) | Transversely-excited film bulk acoustic resonator with lateral etch stop | |
| US11984868B2 (en) | Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer | |
| US7675389B2 (en) | Piezoelectric resonator, piezoelectric filter, and duplexer and communication device using the same | |
| US8631547B2 (en) | Method of isolation for acoustic resonator device | |
| US10491186B2 (en) | Resonator and method for providing resonator | |
| US11916540B2 (en) | Transversely-excited film bulk acoustic resonator with periodic etched holes | |
| US20230223913A1 (en) | Baw resonance device, filter device and rf front-end device | |
| JP7194476B2 (en) | Bulk acoustic wave resonator, manufacturing method thereof, filter, radio frequency communication system | |
| CN114362719B (en) | Monolithic integrated acoustic wave filter array and preparation method thereof | |
| JP7339694B2 (en) | Bulk acoustic wave resonator, manufacturing method thereof, filter, radio frequency communication system | |
| CN112688657A (en) | Acoustic wave resonator and preparation method thereof | |
| CN114006602A (en) | Bulk acoustic wave duplexer integrated with same core, preparation method and electronic equipment | |
| CN113794458A (en) | Surface acoustic wave device with composite film layer | |
| CN112290904A (en) | Ultrahigh frequency resonator based on embedded electrode | |
| CN114337588B (en) | Surface acoustic wave resonator device, forming method, filter device and radio frequency front end device | |
| CN114301412B (en) | Lamb wave acoustic wave device with improved substrate structure and method of making same | |
| US20230261626A1 (en) | Tuning acoustic resonators with back-side coating | |
| US20230283256A1 (en) | Filter with multiple resonators having different passivation thickness distributions | |
| US20220321087A1 (en) | Transversely-excited film bulk acoustic resonators with solidly mounted resonator (smr) pedestals | |
| US20230137468A1 (en) | Dielectric coated transversely-excited film bulk acoustic resonator (xbar) for coupling optimization | |
| US20230336155A1 (en) | Transversely-excited film bulk acoustic resonator using pre-formed cavities | |
| US20230327644A1 (en) | Ladder filter with transversely-excited film bulk acoustic resonators having different pitches | |
| CN113014224A (en) | Filter using piezoelectric thin film bonded to high resistivity silicon substrate with trap rich layer | |
| CN114024519A (en) | Film bulk acoustic resonator, preparation method and film bulk acoustic filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |