CN111817678B - Monolithic hybrid integrated acoustic resonator array and preparation method thereof - Google Patents

Monolithic hybrid integrated acoustic resonator array and preparation method thereof Download PDF

Info

Publication number
CN111817678B
CN111817678B CN202010631496.8A CN202010631496A CN111817678B CN 111817678 B CN111817678 B CN 111817678B CN 202010631496 A CN202010631496 A CN 202010631496A CN 111817678 B CN111817678 B CN 111817678B
Authority
CN
China
Prior art keywords
piezoelectric layer
support substrate
array
layer
acoustic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010631496.8A
Other languages
Chinese (zh)
Other versions
CN111817678A (en
Inventor
欧欣
周鸿燕
张师斌
郑鹏程
黄凯
游天桂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Institute of Microsystem and Information Technology of CAS
Original Assignee
Shanghai Institute of Microsystem and Information Technology of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Institute of Microsystem and Information Technology of CAS filed Critical Shanghai Institute of Microsystem and Information Technology of CAS
Priority to CN202010631496.8A priority Critical patent/CN111817678B/en
Publication of CN111817678A publication Critical patent/CN111817678A/en
Application granted granted Critical
Publication of CN111817678B publication Critical patent/CN111817678B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H2003/0071—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of bulk acoustic wave and surface acoustic wave elements in the same process
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0428—Modification of the thickness of an element of an electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

The application relates to a monolithic hybrid integrated acoustic resonator array and a preparation method thereof, wherein the acoustic resonator array comprises a supporting substrate; a piezoelectric layer on the upper surface of the support substrate; the piezoelectric layer includes a plurality of regions of differing thickness; the surface of the piezoelectric layer, which is in contact with the support substrate, is flat or the surface of the piezoelectric layer, which is far away from the support substrate, is flat; an array of interdigitated electrodes on the upper surface of the piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to a plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to a plurality of interdigital electrodes with different geometrical characteristics are different. The working frequency of the acoustic wave resonator array can simultaneously cover low frequency, medium frequency and high frequency bands, so that the problems of complex process and design and the like caused by system-level integration of discrete acoustic wave resonators in practical application can be solved.

Description

Monolithic hybrid integrated acoustic resonator array and preparation method thereof
Technical Field
The application relates to the technical field of semiconductors, in particular to a monolithic hybrid integrated acoustic resonator array and a preparation method thereof.
Background
The filter has a frequency selection function, i.e., allows signals with a desired frequency to pass through, and suppresses signals with an undesired frequency from passing through, and is an extremely important component in the field of microwave communication, and is widely used in the fields of mobile communication, satellite communication, radar, and other microwave communications. Filters are usually composed of a plurality of resonators interconnected by means of electrodes.
The coming of the fifth Generation mobile communication technology (5th-Generation, 5G) has a great impact on the filter industry. The 5G network includes two sections of frequencies: the filter comprises an FR1 frequency band and an FR2 frequency band, wherein the FR1 frequency band is a current main frequency band, and the frequency range is 450MHz-6GHz, which puts higher requirements on the working frequency range of the filter; meanwhile, the requirements for the performance of the filter (such as high frequency, low loss, etc.) are also increasing.
Surface Acoustic Wave (SAW) filters are widely used in 2G receiver front-ends as well as duplexers and receive filters. The SAW filter integrates low insertion loss and good inhibition performance, and has large bandwidth and small volume; but because of the acoustic surface wave sound velocity and the limitation of electrode preparation, the method is generally only suitable for applications below 2 GHz. Above 2GHz, Bulk Acoustic Wave (BAW) filters have performance advantages.
Therefore, the communication of the current mobile terminal usually adopts the SAW filter and the BAW filter to cooperatively meet the requirements of different frequency bands, which causes the problems of increased process cost, complex design and manufacturing process, and the like.
Disclosure of Invention
The embodiment of the application provides a single-chip hybrid integrated acoustic wave resonator array and a preparation method thereof, which can realize the single-chip integration of a multi-band filter, thereby solving the problems of complex process, complex design and high cost caused by the need of cooperative work of a surface acoustic wave filter, a bulk acoustic wave filter and the like in actual requirements.
In one aspect, a monolithic hybrid integrated acoustic resonator array comprises:
a support substrate;
a piezoelectric layer on the upper surface of the support substrate; the piezoelectric layer includes a plurality of regions of differing thickness; the surface of the piezoelectric layer, which is contacted with the supporting substrate, is flat; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate;
an array of interdigitated electrodes on the upper surface of the piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to a plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to a plurality of interdigital electrodes with different geometrical characteristics are different.
Optionally, the periods of the plurality of interdigital electrodes corresponding to the plurality of regions with different thicknesses are all the same.
Optionally, the thickness of corresponding areas on the piezoelectric layer of a plurality of interdigital electrodes in the interdigital electrode array, which have the same geometric characteristics but different periods, is the same.
Optionally, the plurality of interdigital electrodes corresponding to the regions with different thicknesses at least include two interdigital electrodes with different periods.
Optionally, a ratio of the thickness of each of the multiple regions with different thicknesses to the corresponding target acoustic wave wavelength is greater than or equal to 0.05 and less than or equal to 0.5.
Optionally, the support substrate is a single layer structure;
or;
the support substrate is a multilayer structure; the multilayer structure includes a substrate layer and at least one material layer.
Optionally, the material of the support substrate includes any one of silicon, silicon oxide, silicon carbide, sapphire, diamond, gallium arsenide, quartz, lithium niobate, lithium tantalate, aluminum nitride, gallium oxide, and zinc oxide.
Alternatively, the material of the material layer includes any one of silicon, silicon oxide, silicon carbide, sapphire, diamond, gallium arsenide, quartz, lithium niobate, lithium tantalate, aluminum nitride, gallium oxide, zinc oxide, benzocyclobutene, polyimide, polydimethylsiloxane, and polystyrene.
Optionally, the material of the piezoelectric layer includes any one of lithium niobate, potassium niobate, lithium tantalate, aluminum nitride, quartz, and zinc oxide.
Optionally, the plurality of target acoustic wave modes includes at least two of rayleigh wave modes, shear wave modes, symmetric lamb wave modes and anti-symmetric lamb wave modes.
Optionally, the piezoelectric layer is an X-cut lithium niobate thin film; the target acoustic wave modes excited in the piezoelectric layer include shear wave modes and symmetric lamb wave modes;
an included angle between the propagation direction of the interdigital electrode corresponding to the shear wave mode and the Y axis of the acoustic wave resonator array is less than or equal to 20 degrees;
and an included angle between the propagation direction of the interdigital electrode corresponding to the symmetrical lamb wave mode and the Y axis of the acoustic wave resonator array is less than or equal to 60 degrees.
Optionally, the device further comprises a bottom electrode;
the bottom electrode is located between the support substrate and the piezoelectric layer.
Optionally, the support substrate has a cavity structure, and the cavity structure is used for enabling the piezoelectric layer to be in a suspended state.
In another aspect, an embodiment of the present application provides a monolithic hybrid integrated acoustic resonator array, including:
a support substrate;
a filling layer positioned on the upper surface of the supporting substrate;
the piezoelectric layer is positioned on the upper surface of the filling layer; the piezoelectric layer includes a plurality of regions of differing thickness; the surface of the piezoelectric layer, which is far away from the support substrate, is flat; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate;
an array of interdigitated electrodes on the upper surface of the piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to a plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to a plurality of interdigital electrodes with different geometrical characteristics are different.
In another aspect, an embodiment of the present application provides a method for manufacturing a monolithic hybrid integrated acoustic resonator array, including:
obtaining a support substrate;
forming a piezoelectric layer on a support substrate;
thinning the piezoelectric layer to form a plurality of areas with different thicknesses; the surface of the piezoelectric layer, which is contacted with the supporting substrate, is flat; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate;
depositing an interdigital electrode array on the thinned piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to a plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to a plurality of interdigital electrodes with different geometrical characteristics are different.
Optionally, obtaining a support substrate, comprising:
obtaining a substrate layer;
and forming at least one material layer on the substrate layer to obtain the support substrate.
In another aspect, embodiments of the present application provide a method of forming a piezoelectric layer on a support substrate, including:
forming a piezoelectric layer on a support substrate by an ion beam lift-off method and a bonding method;
or; forming a piezoelectric layer on a support substrate by a deposition method;
or; forming a piezoelectric layer on a support substrate by an epitaxial method;
or; the piezoelectric layer is formed on the support substrate by bonding and grinding.
Optionally, thinning the piezoelectric layer includes:
and thinning the piezoelectric layer in a subarea way by any one of a low-energy ion irradiation method, an inductive coupling plasma etching method and a reactive ion etching method.
Optionally, the piezoelectric layer is thinned in a partitioned manner by any one of a low-energy ion irradiation method, an inductively coupled plasma etching method and a reactive ion etching method, including:
and covering a mask corresponding to the secondary thinning area on the upper surface of the piezoelectric layer.
Optionally, thinning the piezoelectric layer by any one of a low-energy ion irradiation method, an inductively coupled plasma etching method, and a reactive ion etching method, including:
a patterned grating is added at the ion source to adjust the direction and energy of the emergent ions in different areas.
Optionally, after forming the piezoelectric layer on the support substrate, before thinning the piezoelectric layer, the method further includes:
the surface of the piezoelectric layer is subjected to photolithography to form a pattern.
Optionally, the thickness of each interdigital electrode in the interdigital electrode array is less than or equal to the maximum thickness in a plurality of regions with different thicknesses.
Optionally, after obtaining the supporting substrate, before forming the piezoelectric layer on the supporting substrate, the method further includes:
a bottom electrode is formed on a support substrate.
Optionally, the full width at half maximum of the XRD spectrum of the piezoelectric layer is less than 0.5 degree.
Optionally, after obtaining the supporting substrate, before forming the piezoelectric layer on the supporting substrate, the method further includes:
and etching the support substrate to form a cavity structure.
In another aspect, an embodiment of the present application provides a method for manufacturing a monolithic hybrid integrated acoustic resonator array, including:
obtaining the piezoelectric material after ion implantation;
regionalizing and thinning the piezoelectric material to form a plurality of regions with different thicknesses;
depositing a filling layer on the thinned piezoelectric material;
polishing the filling layer to flatten the surface, thereby obtaining the polished filling layer and the piezoelectric material;
transferring the polished filling layer and the piezoelectric material to the obtained support substrate;
peeling the transferred piezoelectric material to obtain a piezoelectric layer with a flat upper surface; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate;
depositing an array of interdigitated electrodes on the upper surface of the piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to a plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to a plurality of interdigital electrodes with different geometrical characteristics are different.
Optionally, the filling layer is made of a temperature compensation material;
the acoustic impedance of the filling layer is larger than that of the supporting substrate; the thermal conductivity of the fill layer is greater than the thermal conductivity of the support substrate.
The monolithic hybrid integrated acoustic resonator array and the preparation method thereof have the following beneficial effects:
the monolithic hybrid integrated acoustic resonator array comprises a supporting substrate; a piezoelectric layer on the upper surface of the support substrate; the piezoelectric layer includes a plurality of regions of differing thickness; the surface of the piezoelectric layer, which is in contact with the support substrate, is flat or the surface of the piezoelectric layer, which is far away from the support substrate, is flat; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate; an array of interdigitated electrodes on the upper surface of the piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to a plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to a plurality of interdigital electrodes with different geometrical characteristics are different. In the application, considering that the working frequency of the acoustic wave resonator is closely related to the sound velocity of a target acoustic wave mode, the period of the interdigital electrode, the ratio (h/lambda) of the thickness of the piezoelectric layer to the wavelength of the target acoustic wave, for an area with the same thickness of the piezoelectric layer, different target acoustic wave modes are excited on the piezoelectric layer by designing the geometric characteristics of different interdigital electrodes to regulate and control the working frequency of the corresponding acoustic wave resonator; for the area with the same thickness of the piezoelectric layer and the same geometric characteristics of the interdigital electrodes (namely the same target acoustic wave mode), the resonant frequency of the corresponding acoustic wave resonator is regulated and controlled by adjusting the period of the interdigital electrodes; for the acoustic wave resonators with the same target acoustic wave mode and interdigital electrode period, the value of h/lambda is changed by adjusting the thickness of the corresponding area on the piezoelectric layer, so that the resonant frequency of the corresponding acoustic wave resonator is regulated and controlled; in addition, under the condition of determining the geometric characteristics of the interdigital electrodes (namely selecting a target acoustic wave mode), when the resonant frequency of the corresponding acoustic wave resonator is regulated and controlled by adjusting the period of the interdigital electrodes, the thickness of the area on the corresponding piezoelectric layer can be adjusted at the same time, so that a larger electromechanical coupling coefficient is obtained purposefully. The working frequency of the acoustic wave resonator can be regulated and controlled by singly or in combination of selecting a target acoustic wave mode, adjusting the period of the interdigital electrode and adjusting the thickness of the corresponding area of the piezoelectric layer. Therefore, the monolithic hybrid integrated acoustic wave resonator array covering the low-frequency band to the high-frequency band can be realized on the whole piezoelectric layer, the monolithic integration of the multi-band acoustic filter can be realized, and the problems of complex process, complex design, high cost and the like caused by the need of cooperative work of an SAW resonator, a BAW resonator and the like in actual requirements are solved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a monolithic hybrid integrated acoustic resonator array according to an embodiment of the present disclosure;
fig. 2 is a top view of a monolithic hybrid integrated resonator array provided in an embodiment of the present application;
fig. 3 is a schematic diagram of an admittance curve of an acoustic wave resonator SH0mode according to the prior art provided by an embodiment of the present application;
fig. 4 is a schematic diagram of admittance curves of a monolithic hybrid integrated acoustic resonator array SH0mode according to an embodiment of the present application;
FIG. 5 is a schematic diagram of a variation curve of sound velocity with h/λ according to an embodiment of the present application;
fig. 6 is a schematic diagram of admittance curves of a monolithic hybrid integrated acoustic resonator array SH0mode according to an embodiment of the present application;
fig. 7 is a schematic diagram of admittance curves of a monolithic hybrid integrated acoustic resonator array S0mode according to an embodiment of the present application;
fig. 8 is a schematic structural diagram of another monolithic hybrid integrated acoustic resonator array provided in the embodiments of the present application;
fig. 9 is a schematic flowchart of a method for manufacturing a monolithic hybrid integrated acoustic resonator array according to an embodiment of the present disclosure;
fig. 10 is a schematic flowchart of another method for manufacturing a monolithic hybrid integrated acoustic resonator array according to an embodiment of the present disclosure;
fig. 11 is a schematic diagram of a manufacturing process of a monolithic hybrid integrated acoustic resonator array according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or server that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Example 1:
in order to realize the integration of the acoustic wave resonators of different working frequency bands and achieve the effects of modularization and integration, the embodiment of the application provides a monolithic hybrid integrated acoustic wave resonator array. Referring to fig. 1, fig. 1 is a schematic structural diagram of a monolithic hybrid integrated acoustic resonator array according to an embodiment of the present application, including:
a support substrate 110;
a piezoelectric layer 120 on the upper surface of the support substrate 110; piezoelectric layer 120 includes a plurality of regions of differing thickness; the surface of the piezoelectric layer 120 in contact with the support substrate 110 is flat; the acoustic impedance of the piezoelectric layer 120 is less than the acoustic impedance of the support substrate 110;
an array of interdigitated electrodes 130 located on the upper surface of the piezoelectric layer 120; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array 130 correspond to a plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of the piezoelectric layer 120 of a plurality of interdigital electrodes with different geometric characteristics in the interdigital electrode array 130 are the same; and a plurality of target acoustic wave modes corresponding to a plurality of interdigital electrodes with different geometrical characteristics are different.
In the embodiment of the present application, the resonant frequency of the acoustic wave resonator may be determined according to formula (1):
fr＝V/2Pi……(1)
wherein f isrRepresents the resonant frequency; v represents the acoustic velocity of the target acoustic mode excited by the piezoelectric layer; piThe period of the interdigitated electrodes is indicated.
In the embodiment of the application, the finger duty ratio of the interdigital electrode is set to 0.5, and at this time, P isiIs 2 times of the line width of the interdigital electrode and 0.5 times of the wavelength lambda of the target acoustic wave mode. Considering that the operating frequency of the acoustic wave resonator is closely related to the acoustic velocity of the target acoustic wave mode, the period of the interdigital electrode, and the ratio (h/λ) of the thickness of the piezoelectric layer to the wavelength of the target acoustic wave, and considering that the nonlinear relationship in which the acoustic velocity of the target acoustic wave mode excited in the piezoelectric layer 120 changes as the ratio (h/λ) of the thickness of the piezoelectric layer 120 to the wavelength of the target acoustic wave acoustic velocity is transformed, as shown in fig. 1, two interdigital electrodes (Int)IDT) represents an interdigital electrode period Pi and has a length of λ/2. For the areas with the same thickness of the piezoelectric layer, different target acoustic wave modes are excited on the piezoelectric layer by designing the geometric characteristics of different interdigital electrodes, so that the working frequency of the corresponding acoustic wave resonator is regulated and controlled; for the area with the same thickness of the piezoelectric layer and the same geometric characteristics of the interdigital electrodes (namely the same target acoustic wave mode), regulating and controlling the resonant frequency of the corresponding acoustic wave resonator by adjusting the period Pi of the interdigital electrodes; for the acoustic wave resonator with the same target acoustic wave mode and interdigital electrode period Pi, the value of h/lambda is changed by adjusting the thickness of the corresponding area on the piezoelectric layer, so as to regulate and control the resonant frequency of the corresponding acoustic wave resonator; when the interdigital electrode period Pi is smaller, the electrode period Pi is continuously shortened to improve the working frequency of the device, so that the performance of the device is seriously degraded. In addition, under the condition of determining the geometric characteristics of the interdigital electrodes (namely selecting a target acoustic wave mode), when the resonant frequency of the corresponding acoustic wave resonator is regulated and controlled by adjusting the period Pi of the interdigital electrodes, the thickness of the area on the corresponding piezoelectric layer can be adjusted at the same time to obtain more proper h/lambda, so that a larger electromechanical coupling coefficient can be obtained in a wide frequency range purposefully. In addition, the acoustic impedance of the target acoustic wave mode excited by the piezoelectric layer 120 is smaller than that of the support substrate 110 to suppress or reduce leakage of the energy of the target acoustic wave mode excited by the piezoelectric layer 120 to the support substrate 110, so that the Q value of the acoustic wave resonator can be increased.
In the monolithic hybrid integrated acoustic resonator array provided in the embodiment of the present application, monolithic refers to that acoustic resonators with different operating frequencies are integrated on the same wafer, that is, the same supporting substrate 110 is adopted; the hybrid integration refers to hybrid integration of acoustic wave resonators of different acoustic wave modes, for example, an acoustic wave resonator a excites a Rayleigh (Rayleigh) mode as a target acoustic wave mode, an acoustic wave resonator B excites a zeroth-order transverse shear (SH0) mode as a target acoustic wave mode, and an acoustic resonator C excites a zeroth-order symmetric lamb wave (S0) mode as a target acoustic wave mode in an acoustic wave resonator array. The different acoustic modes have large differences in acoustic velocity and different transmission characteristics within the piezoelectric layer 120.
Therefore, according to the monolithic hybrid integrated acoustic wave resonator array provided in the embodiment of the present application, as shown in fig. 1, a plurality of interdigital electrodes 1301 with the same geometric characteristics in the interdigital electrode array 130 correspond to a plurality of regions with different thicknesses in a one-to-one manner, that is, under the condition that the target acoustic wave modes corresponding to the plurality of interdigital electrodes 1301 are the same, the value of h/λ can be changed by adjusting the thickness of the corresponding piezoelectric layer region, so that the acoustic wave resonators corresponding to the plurality of interdigital electrodes 1301 operate at different frequencies, for example, an acoustic wave resonator corresponding to one interdigital electrode 1301 in the plurality of interdigital electrodes 1301 can cover a low frequency (<1.5GHz) and can maintain a large electromechanical coupling coefficient, and an acoustic wave resonator corresponding to another interdigital electrode 1301 in the plurality of interdigital electrodes 1301 can cover a high frequency (>3.0GHz) band; the thicknesses of corresponding areas of the plurality of interdigital electrodes 1302 with different geometric characteristics on the piezoelectric layer 120 in the interdigital electrode array 130 are the same, that is, for the plurality of interdigital electrodes 1302 with different geometric characteristics, because the corresponding piezoelectric layer areas can excite different target acoustic wave modes, the corresponding acoustic wave resonators can cover different operating frequency bands, such as an intermediate frequency (1.5-3.0 GHz), and therefore, the thicknesses of the corresponding areas of the plurality of interdigital electrodes 1302 with different geometric characteristics on the piezoelectric layer 120 can be the same. In summary, according to the monolithic hybrid integrated acoustic wave resonator array provided in the embodiment of the present application, the adjustment of the working frequency of the acoustic wave resonator is realized by using a single or a combination of three modes, i.e., selecting a target acoustic wave mode, adjusting the period of the interdigital electrode, and adjusting the thickness of the corresponding piezoelectric layer region. The working frequency of the acoustic wave resonator array can simultaneously cover low-frequency (<1.5GHz), medium-frequency (1.5-3.0 GHz) and high-frequency (>3.0GHz) frequency bands, so that the problem that in practical application, discrete acoustic wave resonators based on different piezoelectric materials and different in structure need to be subjected to complex system-level integration to meet application requirements of each frequency band can be solved, for example, monolithic integration of a multi-band filter can be realized, the problem that the SAW filter cannot be applied to a high-frequency scene is solved, and the problems of complex process, complex design and high cost caused by cooperative work of the SAW filter and a BAW filter are solved.
In an alternative embodiment, the period of the plurality of interdigital electrodes corresponding to a plurality of regions with different thicknesses is the same.
In another alternative embodiment, at least two interdigital electrodes with different periods are included in the plurality of interdigital electrodes corresponding to the regions with different thicknesses.
In an alternative embodiment, the thickness of corresponding areas on the piezoelectric layer of a plurality of interdigital electrodes in the interdigital electrode array, which have the same geometric characteristics but different periods, is the same.
In an alternative embodiment, the ratio (h/λ) of the thickness of each of the plurality of regions with different thicknesses of the piezoelectric layer 120 to the corresponding target acoustic wavelength is greater than or equal to 0.05 and less than or equal to 0.5.
In an alternative embodiment, the support substrate 110 is a single layer structure.
In an alternative embodiment, the material of the support substrate 110 includes any one of silicon, silicon oxide, silicon carbide, sapphire, diamond, gallium arsenide, quartz, lithium niobate, lithium tantalate, aluminum nitride, gallium oxide, and zinc oxide.
In an alternative embodiment, the material of the piezoelectric layer 120 includes any one of lithium niobate, potassium niobate, lithium tantalate, aluminum nitride, quartz, and zinc oxide.
In an alternative embodiment, the plurality of target acoustic wave modes includes at least two of rayleigh wave modes, shear wave modes, symmetric lamb wave modes and anti-symmetric lamb wave modes.
In an alternative embodiment, the piezoelectric layer is an X-cut lithium niobate thin film; the target acoustic wave modes excited in the piezoelectric layer include shear wave modes and symmetric lamb wave modes;
an included angle between the propagation direction of the interdigital electrode corresponding to the shear wave mode and the Y axis of the acoustic wave resonator array is less than or equal to 20 degrees;
and an included angle between the propagation direction of the interdigital electrode corresponding to the symmetrical lamb wave mode and the Y axis of the acoustic wave resonator array is less than or equal to 60 degrees.
Specifically, referring to fig. 2, fig. 2 is a top view of a monolithic hybrid integrated acoustic resonator array according to an embodiment of the present application, in which the supporting substrate 110 may be silicon carbide (not shown), and the coordinate system XYZ of the acoustic resonator array is only used as a reference and is actually determined according to the crystal orientation; the piezoelectric layer 120 is a single crystal lithium niobate layer, and the XRD full width at half maximum is less than 0.5 degree; when the required working frequency of the resonator is below 2GHz and above 3.5GHz, respectively utilizing shear waves and symmetrical lamb waves in the piezoelectric layer; for shear waves, setting an included angle between the propagation direction of the interdigital electrode and the + Y axis of the acoustic wave resonator array to be-15 degrees; for symmetrical lamb waves, setting an included angle between the propagation direction of the interdigital electrode and the + Y axis of the acoustic wave resonator array to be +40 degrees; thus, the low-frequency to high-frequency coverage is realized on the monolithic hybrid integrated acoustic wave resonator array.
In another alternative embodiment, the support substrate is a multilayer structure; the multilayer structure includes a substrate layer and at least one material layer.
Correspondingly, in an alternative embodiment, the material of the material layer includes any one of silicon, silicon oxide, silicon carbide, sapphire, diamond, gallium arsenide, quartz, lithium niobate, lithium tantalate, aluminum nitride, gallium oxide, zinc oxide, benzocyclobutene, polyimide, polydimethylsiloxane, and polystyrene.
In an alternative embodiment, the device further comprises a bottom electrode; the bottom electrode is located between the support substrate and the piezoelectric layer.
In an alternative embodiment, the support substrate has a cavity structure for suspending the piezoelectric layer.
The performance of the monolithic hybrid integrated acoustic resonator array provided by the embodiments of the present application is described below by using a specific example.
In this example, the supporting substrate 110 of the monolithic hybrid integrated acoustic resonator array is a silicon (Si) substrate, a piezoelectricLayer 120 is lithium niobate LiNbO3A (LN) layer, wherein a plurality of regions with different thicknesses are formed after the LN layer is locally thinned for a plurality of times; the upper surface of the LN layer is provided with an interdigital electrode array 130.
Continuing to explain by taking the acoustic wave mode excited in the LN layer as a shear wave mode (SH 0mode), since the line width of the interdigital electrode determines the wavelength λ, when the wavelength λ is more than 1.4 μm, the line width of the interdigital electrode is larger at this time; also for reference, the prior art is based on LiNbO3The thickness of LN layer of the acoustic resonator of the/Si structure is uniform and constant. Referring to fig. 3 and 4, fig. 3 is a schematic diagram of an admittance curve of an acoustic resonator SH0mode in the prior art according to an embodiment of the present application, and fig. 4 is a schematic diagram of an admittance curve of a monolithic hybrid integrated acoustic resonator array SH0mode according to an embodiment of the present application.
First, as can be seen from fig. 3, when the LN layer thickness formed on the substrate surface by the ion beam lift-off and bond transfer technique is 560 nm, as described in this application, the SH0mode is selected as the target acoustic wave mode, and while keeping the LN layer thickness constant, varying λ can achieve different operating frequencies of the resonator. However, as λ increases (from left to right), the electromechanical coupling coefficient (K)2) And rapidly decreases. If it is necessary to keep K large in a wide frequency range2In this case, the thickness of the piezoelectric film can be adjusted at the same time, and as can be seen from fig. 4, the thickness of the piezoelectric film and the period of the interdigital electrode are adjusted at the same time, and the ratio of the thickness to the wavelength in the region is kept unchanged (e.g., h/λ is 0.3 in fig. 4), so that the adjustment of the operating frequency can be realized, and a large electromechanical coupling coefficient can be maintained. As can be seen from fig. 4, when the device wavelength is 1.4um to 4.8um, the frequency of the monolithic hybrid integrated acoustic resonator array covers 750MHz to 2.7GHz, and a larger electromechanical coupling coefficient can be maintained compared to the prior art.
Secondly, it can be known from the prior art that the working frequency of the device can be improved by means of reducing the line width of the interdigital electrode, however, when the working frequency is above 2.5GHz, if the electrode width is reduced, the resistance of the device is increased sharply, so that the performance of the device is degraded rapidly, and the narrow electrode finger strip cannot meet the long-term stable working under the high power condition. Referring to fig. 5, fig. 5 is a schematic diagram of a variation curve of sound velocity with h/λ according to an embodiment of the present application, and it can be seen from fig. 5 that the sound velocity (Vp) increases with the decrease of h/λ, that is, when the wavelength λ of the device is kept constant, the sound velocity of SH0mode is effectively increased by decreasing the thickness of the LN layer. Therefore, in the embodiment of the application, in order to obtain a higher-frequency high-performance device, the wavelength is fixed to be 1.4um and is not reduced any more, and then the elastic wave sound velocity is increased by adjusting the local thickness of the piezoelectric layer and changing the value of h/lambda, so that the working frequency of the device is increased. Referring to fig. 6, fig. 6 is a schematic diagram of admittance curves of a monolithic hybrid integrated acoustic resonator array SH0mode according to an embodiment of the present application, in an improved monolithic hybrid integrated acoustic resonator array according to an embodiment of the present application, a piezoelectric layer may include 6 regions with thicknesses of 560 nm, 504 nm, 420 nm, 294 nm, 196 nm, and 140 nm, and h/λ of 0.4, 0.36, 0.3, 0.21, 0.14, and 0.1, respectively, as can be seen from fig. 6, by gradually thinning the thickness of the piezoelectric layer, an acoustic velocity of SH0mode of the monolithic hybrid integrated acoustic resonator array may be increased from 3709m/s to 4928m/s, and an operating frequency may be increased from 2.7GHz to 3.5 GHz.
According to the embodiments, the monolithic hybrid integrated acoustic resonator array provided by the embodiments of the present application can cover 750MHz to 3.5GHz on a monolithic LN layer, and has a better electromechanical coupling coefficient.
Since the silicon substrate in the above embodiment cannot effectively excite the symmetric lamb wave mode (S0mode) with high acoustic velocity, LiNbO can be used when the monolithic hybrid integrated acoustic resonator array needs to cover a frequency band above 3.5GHz3the/SiC material platform, namely the support substrate, adopts SiC material. At this time, SH0mode in the piezoelectric layer region corresponding to the excitation in the 3.5GHz band or less (the same as in the above embodiment); please refer to fig. 7, where S0mode acoustic waves in a corresponding region of the piezoelectric layer are excited at a frequency of 3.5GHz or more, fig. 7 is a schematic diagram of an admittance curve of the monolithic hybrid integrated acoustic resonator array S0mode provided in the embodiment of the present application, when the wavelength is 1.4 μm, the local thickness of the piezoelectric layer is adjusted, and the value of h/λ is kept to be 0.25, so that the frequency band coverage up to 5GHz can be achieved, and the electromechanical system can achieve electromechanical couplingThe coupling coefficient is higher. It should be noted that the propagation direction of the interdigital electrode can be set according to actual requirements, and the positions in the figures are only schematic.
Example 2:
referring to fig. 8, fig. 8 is a schematic structural diagram of another monolithic hybrid integrated acoustic resonator array according to an embodiment of the present application, where the monolithic hybrid integrated acoustic resonator array includes:
a support substrate 810;
a filling layer 820 on the upper surface of the support substrate 810;
a piezoelectric layer 830 on the upper surface of the filling layer 820; the piezoelectric layer 830 includes a plurality of regions of differing thickness; the surface of the piezoelectric layer 830 away from the support substrate is flat; the acoustic impedance of the piezoelectric layer 830 is less than the acoustic impedance of the support substrate;
an array of interdigitated electrodes 840 on the upper surface of the piezoelectric layer 830; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array 840 correspond to a plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometric characteristics on the piezoelectric layer in the interdigital electrode array 840 are the same; and a plurality of target acoustic wave modes corresponding to a plurality of interdigital electrodes with different geometrical characteristics are different.
Unlike the structure of the monolithic hybrid integrated acoustic resonator array in embodiment 1, in this embodiment, a filling layer 820 is included between the support substrate 810 and the piezoelectric layer 830, and a surface of the piezoelectric layer 830 away from the support substrate is flat; since the piezoelectric layer 830 includes a plurality of regions with different thicknesses, and the surface thereof is uneven, in this embodiment, in order to dispose the uneven surface of the piezoelectric layer 830 at a position close to the support substrate 810, it is necessary to dispose a filling layer on the uneven surface of the piezoelectric layer 830 in advance, polish the filling layer, and transfer the polished filling layer 820 and the piezoelectric layer 830 onto the support substrate 810. Similarly, referring to example 1, a plurality of interdigital electrodes 8401 with the same geometric characteristics in the interdigital electrode array 840 correspond to a plurality of regions with different thicknesses in a one-to-one manner, that is, an acoustic wave resonator corresponding to one interdigital electrode in the plurality of interdigital electrodes 8401 can cover a low frequency (<1.5GHz) and can maintain a large electromechanical coupling coefficient, and an acoustic wave resonator corresponding to another interdigital electrode in the plurality of interdigital electrodes 8401 can cover a high frequency (>3.0GHz) band; the thicknesses of corresponding areas of the plurality of interdigital electrodes 8402 on the piezoelectric layer, which have different geometric characteristics, in the interdigital electrode array 840 are the same, that is, for the plurality of interdigital electrodes 8402 which have different geometric characteristics, different target acoustic wave modes can be excited in corresponding piezoelectric layer areas, so that the corresponding acoustic wave resonators can cover different working frequency bands, such as intermediate frequencies (1.5-3.0 GHz), and therefore, the thicknesses of corresponding areas of the plurality of interdigital electrodes 8402 on the piezoelectric layer 830, which have different geometric characteristics, can be the same. Thus, as in embodiment 1, the operating frequency of the acoustic wave resonator array in embodiment 2 can simultaneously cover the low frequency (<1.5GHz), the intermediate frequency (1.5 to 3.0GHz), and the high frequency (>3.0GHz) bands, and can maintain a high electromechanical coupling coefficient.
In summary, the present application is based on the nonlinear relationship that the acoustic velocity of sound excited in the piezoelectric layer changes with the conversion of the ratio (h/λ) of the thickness of the piezoelectric layer to the wavelength of the target acoustic velocity of sound, and different operating frequencies can be realized for the same region of the piezoelectric layer by selecting acoustic modes of different acoustic velocities, i.e., the in-plane angular orientations of the device; for the area with the same thickness and the same sound wave mode of the piezoelectric film, the working frequency can be regulated and controlled by adjusting the period of the interdigital electrode; when the period of the interdigital electrode is small, the performance of the device is seriously degraded due to the fact that the electrode period is continuously shortened to improve the working frequency of the device, therefore, the piezoelectric layer is locally thinned, the value of h/lambda is reduced, the sound velocity of the acoustic wave excited in the area is improved, and the working frequency of the acoustic wave resonator is effectively improved. In addition, when the acoustic wave mode is selected and the electrode period is adjusted, the thickness of the piezoelectric film can be adjusted at the same time to obtain a proper h/lambda, so that the electromechanical coupling coefficient of the acoustic wave resonator can be ensured to be larger in a wide frequency range, therefore, the monolithic hybrid integrated acoustic wave resonator array with the two structures of the embodiment 1 and the embodiment 2 is provided based on the above concept, and compared with the acoustic wave resonator in the prior art, the frequency band coverage range is improved; the monolithic integration of the multi-band filter can be realized, the problems that the SAW filter cannot be applied to a high-frequency scene and the problems of complex process, complex design and high cost caused by the cooperative work of the SAW filter and the BAW filter are solved.
Example 3:
the embodiment of the application also provides a preparation method of the monolithic hybrid integrated acoustic resonator array, and the monolithic hybrid integrated acoustic resonator array in embodiment 1 can be obtained based on the preparation method of the embodiment. Referring to fig. 9, fig. 9 is a schematic flowchart illustrating a method for manufacturing a monolithic hybrid integrated acoustic resonator array according to an embodiment of the present application, including:
s901: a support substrate is acquired.
S903: a piezoelectric layer is formed on a support substrate.
S905: thinning the piezoelectric layer to form a plurality of areas with different thicknesses; the surface of the piezoelectric layer, which is contacted with the supporting substrate, is flat; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate.
S907: depositing an interdigital electrode array on the thinned piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to a plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to a plurality of interdigital electrodes with different geometrical characteristics are different.
In the embodiment of the application, in the process of executing steps S901 to S907, by adjusting the geometric characteristics of the interdigital electrodes, the single or combined use of three ways of selectively exciting a target acoustic wave mode with a proper acoustic velocity, adjusting the period of the interdigital electrodes, and adjusting the thickness of each area of the piezoelectric layer is performed, so that the monolithic hybrid integrated acoustic wave resonator array operating in a required frequency band is prepared and obtained on the same wafer. The working frequency can be effectively regulated and controlled by adjusting the period of the interdigital electrode; in addition, when the period of the interdigital electrode is narrow, the thickness of the piezoelectric film is adjusted, the sound velocity of a target sound wave mode is effectively improved, and therefore the working frequency of the device is regulated and controlled. Furthermore, the monolithic integration of the multi-band acoustic filter can be realized, and the problems of complex process, complex design, high cost and the like caused by the need of cooperative work of the SAW resonator, the BAW resonator and the like in actual requirements are solved.
In the embodiment of the present application, the step of performing gradient thinning on the piezoelectric layer may be performed according to the actual frequency band requirement, including single or multiple thinning.
In an alternative embodiment of the method for obtaining a support substrate, the method comprises: obtaining a substrate layer; and forming at least one material layer on the substrate layer to obtain the support substrate.
An alternative embodiment for forming a piezoelectric layer on a support substrate includes: a piezoelectric layer is formed on a support substrate by an ion beam lift-off method and a bonding method.
In another alternative embodiment, forming the piezoelectric layer on the support substrate includes: a piezoelectric layer is formed on a support substrate by a deposition method.
In another alternative embodiment, forming the piezoelectric layer on the support substrate includes: the piezoelectric layer is formed on the support substrate by an epitaxial method.
In another alternative embodiment, forming the piezoelectric layer on the support substrate includes: the piezoelectric layer is formed on the support substrate by bonding and grinding.
Specifically, as shown in fig. 4, when the wavelength is 4.8 micrometers, it is necessary to maintain h/λ at 0.3 by locally adjusting the thickness of the LN layer, and therefore, it is necessary to obtain a corresponding LN layer thickness of 1.44 micrometers, but the piezoelectric material obtained by the ion beam lift-off method cannot reach a thickness of 1.44 micrometers; thus, the alternative embodiment described above in this application can be used, i.e., the piezoelectric material is bonded to the support substrate and then ground, so that a thicker piezoelectric layer can be obtained.
An optional embodiment for thinning the piezoelectric layer comprises: by low energy ions (Ar)+) The piezoelectric layer is thinned by any one of an irradiation method, an inductively coupled plasma etching method (ICP) and a reactive ion etching method (RIE). Specifically, the ion beam is directly used for fixed-point positioning etching.
In an optional embodiment of the piezoelectric layer thinning by any one of low-energy ion irradiation, inductively coupled plasma etching, and reactive ion etching, the method includes: and covering a mask plate on the upper surface of the piezoelectric layer so as to thin the piezoelectric layer, wherein multiple mask plates can be used for thinning for multiple times.
In an optional embodiment of the piezoelectric layer thinning by any one of low-energy ion irradiation, inductively coupled plasma etching, and reactive ion etching, the method includes: a grating is added at the ion source to adjust the direction and energy of the emergent ions. The effect of thinning with patterning and different thicknesses is achieved.
In an alternative embodiment, after forming the piezoelectric layer on the supporting substrate and before thinning the piezoelectric layer, the method further includes: the surface of the piezoelectric layer is subjected to photolithography to form a pattern. The steps of photolithography-etching can be repeated a plurality of times.
In an alternative embodiment, the thickness of each of the plurality of interdigital electrodes is less than or equal to the maximum thickness in a plurality of regions having different thicknesses.
In an alternative embodiment, after obtaining the support substrate and before forming the piezoelectric layer on the support substrate, the method further includes:
a bottom electrode is formed on a support substrate.
In an alternative embodiment, the XRD spectrum of the piezoelectric layer has a full width at half maximum of less than 0.5 degrees.
In an alternative embodiment, after obtaining the support substrate and before forming the piezoelectric layer on the support substrate, the method further includes: and etching the support substrate to form a cavity structure. Specifically, a cavity structure is formed by directly etching the support substrate; or; and pre-manufacturing a sacrificial layer, removing the sacrificial layer, and forming a cavity structure at the position of the support substrate.
Example 4:
the embodiment of the application also provides another preparation method of the monolithic hybrid integrated acoustic resonator array, and the monolithic hybrid integrated acoustic resonator array in embodiment 2 can be obtained based on the preparation method of the embodiment. Referring to fig. 10 and fig. 11, fig. 10 is a schematic flowchart illustrating a method for manufacturing a monolithic hybrid integrated acoustic resonator array according to an embodiment of the present application, and fig. 11 is a schematic diagram illustrating a process for manufacturing a monolithic hybrid integrated acoustic resonator array according to an embodiment of the present application, including:
s1001: as shown in fig. 11(a), the piezoelectric material 1110 after ion implantation is obtained.
S1003: as shown in fig. 11(b), the piezoelectric material 1110 is thinned in regions to form a plurality of regions having different thicknesses.
S1005: as shown in fig. 11(c), a filler layer 1120 is deposited on the thinned piezoelectric material 1110.
S1007: as shown in fig. 11(d), the filling layer 1120 is polished to flatten the surface, so as to obtain a polished filling layer 1120 and piezoelectric material 1110.
S1009: as shown in fig. 11(e), the polished fill layer 1120 and piezoelectric material 1110 are transferred onto the obtained support substrate 1130.
S1011: as shown in fig. 11(f), the transferred piezoelectric material 1110 is peeled off, so as to obtain a piezoelectric layer 1110 with a flat upper surface; the acoustic impedance of the piezoelectric layer 1110 is less than the acoustic impedance of the support substrate 1130.
S1013: as shown in fig. 11(g), an interdigitated electrode array 1140 is deposited on the upper surface of the piezoelectric layer 1110; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array 1140 correspond to a plurality of regions with different thicknesses one by one; the thickness of corresponding areas of a plurality of interdigital electrodes with different geometric characteristics on the piezoelectric layer in the interdigital electrode array 1140 is the same; and a plurality of target acoustic wave modes corresponding to a plurality of interdigital electrodes with different geometrical characteristics are different.
Optionally, the filling layer 1120 adopts a temperature compensation material; the acoustic impedance of the fill layer 1120 is greater than the acoustic impedance of the support substrate 1130; the thermal conductivity of the fill layer 1120 is greater than the thermal conductivity of the support substrate 1130.
The preparation method in the embodiment of the application is based on the same application concept as the monolithic hybrid integrated acoustic resonator array embodiment.
It should be noted that: the sequence of the embodiments of the present application is only for description, and does not represent the advantages and disadvantages of the embodiments. And specific embodiments thereof have been described above. Other embodiments are within the scope of the following claims. In some cases, the actions or steps recited in the claims may be performed in a different order than in the embodiments and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results. In some embodiments, multitasking and parallel processing may also be possible or may be advantageous.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (27)

1. A monolithic hybrid integrated acoustic resonator array, comprising:
a support substrate;
a piezoelectric layer located on the upper surface of the support substrate; the piezoelectric layer includes a plurality of regions of differing thickness; the surface of the piezoelectric layer, which is in contact with the support substrate, is flat; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate;
an array of interdigitated electrodes on the upper surface of the piezoelectric layer; a plurality of first interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to the plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of second interdigital electrodes with different geometrical characteristics in the interdigital electrode array on the piezoelectric layer are the same; a plurality of target acoustic wave modes corresponding to the plurality of second interdigital electrodes with different geometrical characteristics are different;
the target acoustic wave modes excited in the piezoelectric layer include shear wave modes and symmetric lamb wave modes;
an included angle between the propagation direction of the interdigital electrode corresponding to the shear wave mode and the Y axis of the acoustic wave resonator array is less than or equal to 20 degrees;
and an included angle between the propagation direction of the interdigital electrode corresponding to the symmetrical lamb wave mode and the Y axis of the acoustic wave resonator array is less than or equal to 60 degrees.
2. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein the period of the first plurality of interdigitated electrodes is the same.
3. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein the thickness of corresponding areas on the piezoelectric layer of a plurality of third interdigital electrodes having the same geometrical characteristics in the interdigital electrode array is the same; at least two of the plurality of third interdigital electrodes have different periods.
4. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein the period of each of the plurality of first interdigitated electrodes is different from each other.
5. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein a ratio of a thickness of each of the plurality of regions of differing thickness to the corresponding target acoustic wavelength is greater than or equal to 0.05 and less than or equal to 0.5.
6. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein the supporting substrate is a single layer structure;
or;
the support substrate is a multilayer structure; the multilayer structure includes a substrate layer and at least one material layer.
7. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein the material of the supporting substrate comprises any of silicon, silicon oxide, silicon carbide, sapphire, diamond, gallium arsenide, quartz, lithium niobate, lithium tantalate, aluminum nitride, gallium oxide, and zinc oxide.
8. The monolithic hybrid integrated acoustic resonator array of claim 6, wherein the material of the material layer comprises any one of silicon, silicon oxide, silicon carbide, sapphire, diamond, gallium arsenide, quartz, lithium niobate, lithium tantalate, aluminum nitride, gallium oxide, zinc oxide, benzocyclobutene, polyimide, polydimethylsiloxane, and polystyrene.
9. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein the material of the piezoelectric layer comprises any of lithium niobate, potassium niobate, lithium tantalate, aluminum nitride, quartz, and zinc oxide.
10. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein the plurality of target acoustic modes comprises at least two of rayleigh, shear, symmetric and anti-symmetric lamb wave modes.
11. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein the piezoelectric layer is an X-cut lithium niobate film.
12. The monolithic hybrid integrated acoustic resonator array of claim 1, further comprising a bottom electrode;
the bottom electrode is located between the support substrate and the piezoelectric layer.
13. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein the support substrate has a cavity structure for suspending the piezoelectric layer.
14. A monolithic hybrid integrated acoustic resonator array, comprising:
a support substrate;
the filling layer is positioned on the upper surface of the supporting substrate;
the piezoelectric layer is positioned on the upper surface of the filling layer; the piezoelectric layer includes a plurality of regions of differing thickness; the surface of the piezoelectric layer, which is far away from the supporting substrate, is flat; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate;
an array of interdigitated electrodes on the upper surface of the piezoelectric layer; a plurality of first interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to the plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of second interdigital electrodes with different geometrical characteristics in the interdigital electrode array on the piezoelectric layer are the same; a plurality of target acoustic wave modes corresponding to the plurality of second interdigital electrodes with different geometrical characteristics are different;
the target acoustic wave modes excited in the piezoelectric layer include shear wave modes and symmetric lamb wave modes;
an included angle between the propagation direction of the interdigital electrode corresponding to the shear wave mode and the Y axis of the acoustic wave resonator array is less than or equal to 20 degrees;
and an included angle between the propagation direction of the interdigital electrode corresponding to the symmetrical lamb wave mode and the Y axis of the acoustic wave resonator array is less than or equal to 60 degrees.
15. A preparation method of a monolithic hybrid integrated acoustic resonator array is characterized by comprising the following steps:
obtaining a support substrate;
forming a piezoelectric layer on the support substrate;
thinning the piezoelectric layer to form a plurality of areas with different thicknesses; the surface of the piezoelectric layer, which is in contact with the support substrate, is flat; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate;
depositing an interdigital electrode array on the thinned piezoelectric layer; a plurality of first interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to the plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of second interdigital electrodes with different geometrical characteristics in the interdigital electrode array on the piezoelectric layer are the same; a plurality of target acoustic wave modes corresponding to the plurality of second interdigital electrodes with different geometrical characteristics are different;
the target acoustic wave modes excited in the piezoelectric layer include shear wave modes and symmetric lamb wave modes;
an included angle between the propagation direction of the interdigital electrode corresponding to the shear wave mode and the Y axis of the acoustic wave resonator array is less than or equal to 20 degrees;
and an included angle between the propagation direction of the interdigital electrode corresponding to the symmetrical lamb wave mode and the Y axis of the acoustic wave resonator array is less than or equal to 60 degrees.
16. The method of claim 15, wherein said obtaining a support substrate comprises:
obtaining a substrate layer;
and forming at least one material layer on the substrate layer to obtain the support substrate.
17. The method of claim 15, wherein forming a piezoelectric layer on the support substrate comprises:
forming the piezoelectric layer on the support substrate by an ion beam lift-off method and a bonding method;
or; forming the piezoelectric layer on the support substrate by a deposition method;
or; forming the piezoelectric layer on the support substrate by an epitaxial method;
or; the piezoelectric layer is formed on the support substrate by bonding and grinding.
18. The method of claim 15, wherein thinning the piezoelectric layer comprises:
and thinning the piezoelectric layer in a subarea way by any one of a low-energy ion irradiation method, an inductive coupling plasma etching method and a reactive ion etching method.
19. The method of claim 18, wherein the step of thinning the piezoelectric layer by sub-division through any one of low energy ion irradiation, inductively coupled plasma etching, and reactive ion etching comprises:
and covering a mask corresponding to the secondary thinning area on the upper surface of the piezoelectric layer.
20. The method of claim 18, wherein thinning the piezoelectric layer by any one of low energy ion irradiation, inductively coupled plasma etching, reactive ion etching comprises:
a patterned grating is added at the ion source to adjust the direction and energy of the emergent ions in different areas.
21. The method of claim 15, wherein after forming the piezoelectric layer on the support substrate and before thinning the piezoelectric layer, further comprising:
photolithography is performed on a surface of the piezoelectric layer to form a pattern.
22. The method of claim 15, wherein the thickness of each interdigital electrode in the interdigital electrode array is less than or equal to the maximum thickness in the plurality of regions having different thicknesses.
23. The method of claim 15, wherein after obtaining the support substrate and before forming the piezoelectric layer on the support substrate, further comprising:
and forming a bottom electrode on the supporting substrate.
24. The method of claim 15, wherein an XRD spectrum of the piezoelectric layer has a full width at half maximum of less than 0.5 degrees.
25. The method of claim 15, wherein after obtaining the support substrate and before forming the piezoelectric layer on the support substrate, further comprising:
and etching the support substrate to form a cavity structure.
26. A preparation method of a monolithic hybrid integrated acoustic resonator array is characterized by comprising the following steps:
obtaining the piezoelectric material after ion implantation;
regionalizing and thinning the piezoelectric material to form a plurality of regions with different thicknesses;
depositing a filling layer on the thinned piezoelectric material;
polishing the filling layer to flatten the surface, thereby obtaining the polished filling layer and the piezoelectric material;
transferring the polished filling layer and the piezoelectric material to the obtained support substrate;
peeling the transferred piezoelectric material to obtain a piezoelectric layer with a flat upper surface; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate;
depositing an array of interdigitated electrodes on an upper surface of the piezoelectric layer; a plurality of first interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to the plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of second interdigital electrodes with different geometrical characteristics in the interdigital electrode array on the piezoelectric layer are the same; a plurality of target acoustic wave modes corresponding to the plurality of second interdigital electrodes with different geometrical characteristics are different;
the target acoustic wave modes excited in the piezoelectric layer include shear wave modes and symmetric lamb wave modes;
an included angle between the propagation direction of the interdigital electrode corresponding to the shear wave mode and the Y axis of the acoustic wave resonator array is less than or equal to 20 degrees;
and an included angle between the propagation direction of the interdigital electrode corresponding to the symmetrical lamb wave mode and the Y axis of the acoustic wave resonator array is less than or equal to 60 degrees.
27. The method of claim 26, wherein the fill layer is a temperature compensating material;
the acoustic impedance of the filling layer is larger than that of the supporting substrate; the thermal conductivity of the filling layer is stronger than that of the support substrate.
CN202010631496.8A 2020-07-03 2020-07-03 Monolithic hybrid integrated acoustic resonator array and preparation method thereof Active CN111817678B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010631496.8A CN111817678B (en) 2020-07-03 2020-07-03 Monolithic hybrid integrated acoustic resonator array and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010631496.8A CN111817678B (en) 2020-07-03 2020-07-03 Monolithic hybrid integrated acoustic resonator array and preparation method thereof

Publications (2)

Publication Number Publication Date
CN111817678A CN111817678A (en) 2020-10-23
CN111817678B true CN111817678B (en) 2021-12-28

Family

ID=72855221

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010631496.8A Active CN111817678B (en) 2020-07-03 2020-07-03 Monolithic hybrid integrated acoustic resonator array and preparation method thereof

Country Status (1)

Country Link
CN (1) CN111817678B (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116458060A (en) * 2020-11-16 2023-07-18 Qorvo美国公司 Piezoelectric layer arrangement in an acoustic wave device and related methods
CN112653417A (en) * 2020-12-18 2021-04-13 广东广纳芯科技有限公司 Surface acoustic wave resonator and method for manufacturing the same
CN113328723B (en) * 2021-06-16 2024-06-14 中国科学院上海微系统与信息技术研究所 Elastic wave resonator and preparation method thereof
CN113381724B (en) * 2021-07-02 2024-05-24 中国科学院上海微系统与信息技术研究所 Bulk acoustic wave resonator and method for manufacturing the same
CN113395051B (en) * 2021-07-09 2024-03-26 赛莱克斯微系统科技（北京）有限公司 Thin film bulk acoustic resonator and high-frequency radio-frequency device
CN113726306A (en) * 2021-07-27 2021-11-30 深圳大学 Multilayer film structure, preparation method and application
CN113676149B (en) * 2021-08-26 2023-11-21 中国科学院上海微系统与信息技术研究所 Acoustic wave device and preparation method thereof
CN113708739B (en) * 2021-08-27 2024-06-18 中国科学院上海微系统与信息技术研究所 Acoustic wave filter
CN113810014A (en) * 2021-09-23 2021-12-17 武汉敏声新技术有限公司 Interdigital bulk acoustic wave resonator and filter
CN114362719B (en) * 2021-12-03 2024-04-05 中国科学院上海微系统与信息技术研究所 Monolithic integrated acoustic wave filter array and preparation method thereof
CN114244311A (en) * 2021-12-22 2022-03-25 江苏卓胜微电子股份有限公司 Surface acoustic wave resonator and filter
CN115021705B (en) * 2022-06-27 2024-04-09 中国科学院上海微系统与信息技术研究所 High-frequency acoustic wave resonator and filter using same
CN115765662B (en) * 2022-10-25 2024-08-30 上海馨欧集成微电有限公司 Compensation method for frequency temperature coefficient of acoustic wave device and acoustic wave device
CN115694388A (en) * 2022-10-26 2023-02-03 河源市艾佛光通科技有限公司 Bulk acoustic wave filter and manufacturing method thereof
CN115395918B (en) * 2022-10-27 2023-08-29 中国科学技术大学 Acoustic wave resonator, design method thereof and manufacturing method thereof
CN117498827A (en) * 2023-11-23 2024-02-02 武汉敏声新技术有限公司 Dual-passband transverse excitation bulk acoustic wave resonator, manufacturing method thereof and filter
CN117526897B (en) * 2024-01-04 2024-03-22 苏州达波新材科技有限公司 Dual-mode surface acoustic wave device and preparation method thereof
CN117938106A (en) * 2024-03-14 2024-04-26 深圳新声半导体有限公司 Integrated bulk acoustic wave filter and manufacturing method

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102037643A (en) * 2008-05-21 2011-04-27 日本电波工业株式会社 Piezoelectric oscillator and detecting sensor
CN102089970A (en) * 2008-07-11 2011-06-08 松下电器产业株式会社 Plate wave element and electronic equipment using same
CN107567682A (en) * 2014-12-17 2018-01-09 Qorvo美国公司 Lamb wave device and manufacture method with ripple limiting structure
WO2018038915A1 (en) * 2016-08-25 2018-03-01 Qualcomm Incorporated Single-chip multi-frequency film bulk acoustic-wave resonators
CN207869080U (en) * 2018-02-08 2018-09-14 武汉衍熙微器件有限公司 A kind of hybrid acoustic resonator of bulk acoustic wave resonator and SAW resonator
CN110448332A (en) * 2019-09-12 2019-11-15 深圳市索诺瑞科技有限公司 A kind of universal ultrasonic transducer
CN110572135A (en) * 2019-09-17 2019-12-13 中国科学院上海微系统与信息技术研究所 high-frequency acoustic wave resonator and preparation method thereof
CN110572138A (en) * 2019-10-08 2019-12-13 开元通信技术（厦门）有限公司 Filtering device and manufacturing method thereof
CN110798167A (en) * 2019-11-25 2020-02-14 开元通信技术（厦门）有限公司 Acoustic wave device and method of manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100719123B1 (en) * 2006-07-27 2007-05-18 삼성전자주식회사 Multi band filter module and manufacture method of the same
JP5275153B2 (en) * 2009-06-23 2013-08-28 太陽誘電株式会社 Method for manufacturing acoustic wave device
US9525398B1 (en) * 2014-05-27 2016-12-20 Sandia Corporation Single crystal micromechanical resonator and fabrication methods thereof
US20180152169A1 (en) * 2016-11-30 2018-05-31 Skyworks Solutions, Inc. Saw filters with stepped-profile piezoelectric substrate
CN110138356B (en) * 2019-06-28 2020-11-06 中国科学院上海微系统与信息技术研究所 High-frequency surface acoustic wave resonator and preparation method thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102037643A (en) * 2008-05-21 2011-04-27 日本电波工业株式会社 Piezoelectric oscillator and detecting sensor
CN102089970A (en) * 2008-07-11 2011-06-08 松下电器产业株式会社 Plate wave element and electronic equipment using same
CN107567682A (en) * 2014-12-17 2018-01-09 Qorvo美国公司 Lamb wave device and manufacture method with ripple limiting structure
WO2018038915A1 (en) * 2016-08-25 2018-03-01 Qualcomm Incorporated Single-chip multi-frequency film bulk acoustic-wave resonators
CN207869080U (en) * 2018-02-08 2018-09-14 武汉衍熙微器件有限公司 A kind of hybrid acoustic resonator of bulk acoustic wave resonator and SAW resonator
CN110448332A (en) * 2019-09-12 2019-11-15 深圳市索诺瑞科技有限公司 A kind of universal ultrasonic transducer
CN110572135A (en) * 2019-09-17 2019-12-13 中国科学院上海微系统与信息技术研究所 high-frequency acoustic wave resonator and preparation method thereof
CN110572138A (en) * 2019-10-08 2019-12-13 开元通信技术（厦门）有限公司 Filtering device and manufacturing method thereof
CN110798167A (en) * 2019-11-25 2020-02-14 开元通信技术（厦门）有限公司 Acoustic wave device and method of manufacturing the same

Also Published As

Publication number Publication date
CN111817678A (en) 2020-10-23

Similar Documents

Publication Publication Date Title
CN111817678B (en) Monolithic hybrid integrated acoustic resonator array and preparation method thereof
US10958236B2 (en) Hybrid acoustic wave resonator and preparation method therefor
US10128814B2 (en) Guided surface acoustic wave device providing spurious mode rejection
Gorisse et al. High frequency LiNbO 3 bulk wave resonator
US11949400B2 (en) Multiple layer system, method of manufacture and saw device formed on the multiple layer system
TWI697204B (en) Surface acoustic wave device on composite substrate
Xu et al. Large-range spurious mode elimination for wideband SAW filters on LiNbO₃/SiO₂/Si platform by LiNbO₃ cut angle modulation
US20210211115A1 (en) Piezoelectric resonator and manufacturing method of piezoelectric resonator
Xu et al. SAW filters on LiNbO 3/SiC heterostructure for 5G n77 and n78 band applications
CN115395918B (en) Acoustic wave resonator, design method thereof and manufacturing method thereof
CN111865257A (en) Acoustic wave resonator and preparation method thereof
Zheng et al. Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO $ _ {3} $/SiC Substrates
CA2642731C (en) Method of isolation for acoustic resonator devices
US20230223915A1 (en) Transversely-excited film bulk acoustic resonators with gap dielectric stripes in busbar-electrode gaps
WO2022134861A1 (en) Frequency-tunable film bulk acoustic resonator and preparation method therefor
CN113300683A (en) Surface acoustic wave resonator and preparation method thereof
Reinhardt et al. Acoustic filters based on thin single crystal LiNbO 3 films: status and prospects
CN114362719B (en) Monolithic integrated acoustic wave filter array and preparation method thereof
Su et al. Lithium Niobate Thin Film Based A 1 Mode Resonators with Frequency up to 16 Ghz and Electromechanical Coupling Factor Near 35%
Yandrapalli et al. Toward band n78 shear bulk acoustic resonators using crystalline Y-cut lithium niobate films with spurious suppression
WO2019141205A1 (en) Surface acoustic wave device with unidirectional transducer
CN114006602A (en) Bulk acoustic wave duplexer integrated with same core, preparation method and electronic equipment
Setiawan et al. SH 1 Mode Plate Wave Resonator on LiTaO 3 Thin Plate with Phase Velocity over 13,000 m/s
Xu et al. Low-Loss N79 Band SAW Filter with 16.0% FBW Based on 15° YX LiNbO 3/SiC Structure
Xu et al. High-Q A0 Mode Plate Wave Resonator on X-cut LiNbO 3 Films with Dummy Electrode Arrays

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant