CN114361350A - Preparation method of perovskite solar cell module - Google Patents
Preparation method of perovskite solar cell module Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 32
- 239000010408 film Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 27
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000002243 precursor Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000002390 adhesive tape Substances 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 238000007639 printing Methods 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 3
- 230000005525 hole transport Effects 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 10
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 7
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 6
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 5
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229920001167 Poly(triaryl amine) Polymers 0.000 claims description 2
- 239000004695 Polyether sulfone Substances 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229920006393 polyether sulfone Polymers 0.000 claims description 2
- -1 polyethylene terephthalate Polymers 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 229910052701 rubidium Inorganic materials 0.000 claims description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 150000001409 amidines Chemical class 0.000 claims 1
- 239000002002 slurry Substances 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000010329 laser etching Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000012296 anti-solvent Substances 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 2
- 238000012360 testing method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 description 1
- 241000282414 Homo sapiens Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
Description
技术领域technical field
本发明属于太阳能电池技术领域,涉及一种非激光刻蚀大面积钙钛矿太阳能电池模组的制备方法。The invention belongs to the technical field of solar cells, and relates to a preparation method of a large-area perovskite solar cell module by non-laser etching.
背景技术Background technique
太阳能是大自然给予人类的清洁可再生能源,高效利用太阳能成为我国实现“碳达峰碳中和”目标的关键技术之一。硅基太阳能电池作为第一代太阳能电池技术,目前占光伏市场的主导地位。但是由于硅基太阳能电池的生产制备过程需要高能耗和高成本的工艺,因而开发高效和低成本的新型太阳能电池技术成为市场的迫切需求。Solar energy is a clean and renewable energy provided by nature to human beings. Efficient use of solar energy has become one of the key technologies for my country to achieve the goal of "carbon peaking and carbon neutrality". Silicon-based solar cells, as the first generation of solar cell technology, currently dominate the photovoltaic market. However, since the production and preparation process of silicon-based solar cells requires high energy consumption and high cost processes, the development of new high-efficiency and low-cost solar cell technologies has become an urgent market demand.
钙钛矿太阳能电池作为第三代新型光伏技术,自从2009年最早开发(3.8%光电转换效率)以来,由于其优异的载流子迁移率、高的吸收系数和低成本溶液加工等特点,经过12年的快速发展,到2021年认证的光电转换效率已经超过25%,而且大面积模组的制备也受到企业界的极大关注和积极参与,成为极具市场应用潜力的新型薄膜太阳能电池技术。As a third-generation new photovoltaic technology, perovskite solar cells have been developed since their earliest development in 2009 (3.8% photoelectric conversion efficiency), due to their excellent carrier mobility, high absorption coefficient, and low-cost solution processing. After 12 years of rapid development, the certified photoelectric conversion efficiency has exceeded 25% by 2021, and the preparation of large-area modules has also received great attention and active participation from the business community, becoming a new type of thin-film solar cell technology with great market application potential. .
在大面积钙钛矿太阳能电池模组的制备中,钙钛矿活性层(P2)和顶部电极(P3)通常采用激光刻蚀的方法划线,需要高功率激光器(红光或绿光),而且非常容易刻蚀掉最下层(P1)透明导电层,引起整个模组器件的失效。In the preparation of large-area perovskite solar cell modules, the perovskite active layer (P2) and top electrode (P3) are usually scribed by laser etching, which requires a high-power laser (red or green light), Moreover, it is very easy to etch away the lowermost (P1) transparent conductive layer, causing the failure of the entire module device.
因此,为了解决现有技术存在的不足,提高良品率、降低生产成本并提高钙钛矿太阳能电池模组的光电转换效率,亟需开发一种非激光刻蚀的钙钛矿太阳能电池模组的制备方法以满足市场应用的迫切需求。Therefore, in order to solve the shortcomings of the existing technology, improve the yield, reduce the production cost and improve the photoelectric conversion efficiency of the perovskite solar cell module, it is urgent to develop a non-laser etching perovskite solar cell module. The preparation method meets the urgent needs of market applications.
发明内容SUMMARY OF THE INVENTION
本发明的术语“高温胶带”,是指3M公司的高温单面胶带。The term "high temperature adhesive tape" in the present invention refers to the high temperature single-sided adhesive tape of 3M Company.
本发明的术语“低温碳电极”是指碳浆料印刷到器件上后,采用低于150℃的温度加热固化而成。The term "low-temperature carbon electrode" in the present invention refers to a carbon paste formed by heating and curing at a temperature lower than 150° C. after the carbon paste is printed on the device.
本发明的目的在于克服上述现有技术的不足,提供一种钙钛矿太阳能电池模组的制备方法,包括以下步骤:The object of the present invention is to overcome the deficiencies of the above-mentioned prior art, and provide a preparation method of a perovskite solar cell module, comprising the following steps:
S1.将高温胶带贴于导电基底上,紫外臭氧处理后,撕除高温胶带,在所述导电基底上印刷制备电子传输层;S1. the high temperature adhesive tape is attached on the conductive substrate, after the ultraviolet ozone treatment, the high temperature adhesive tape is torn off, and the electron transport layer is prepared by printing on the conductive substrate;
S2.将高温胶带贴于所述电子传输层上,紫外臭氧处理后,撕除高温胶带,滴加钙钛矿前驱体溶液,印刷成膜,退火形成钙钛矿薄膜;S2. Affix the high temperature tape on the electron transport layer, after ultraviolet ozone treatment, remove the high temperature tape, drop the perovskite precursor solution, print to form a film, and anneal to form a perovskite film;
S3.将高温胶带贴于所述钙钛矿薄膜上,滴加碳浆料,印刷所述碳浆料形成低温碳电极,得到所述钙钛矿太阳能模组。S3. Affix the high-temperature tape on the perovskite film, drop the carbon paste, and print the carbon paste to form a low-temperature carbon electrode to obtain the perovskite solar module.
进一步地,所述钙钛矿太阳能电池模组的钙钛矿薄膜和低温碳电极之间还含有空穴传输层,所述空穴传输层的制备方法包括以下步骤:Further, a hole transport layer is also contained between the perovskite film and the low-temperature carbon electrode of the perovskite solar cell module, and the preparation method of the hole transport layer includes the following steps:
将空穴传输层溶液滴加到所述钙钛矿薄膜上,印刷制备空穴传输层。The hole transport layer solution is dropped onto the perovskite thin film, and the hole transport layer is prepared by printing.
进一步地,步骤S2中,所述钙钛矿材料为ABX3型钙钛矿,其中,A选自甲胺、甲脒、铯、铷、钾和钠中的至少一种;B选自铅、锡、锗和铋中的至少一种;X选自碘、溴和氯中的至少一种。Further, in step S2, the perovskite material is ABX 3 type perovskite, wherein A is selected from at least one of methylamine, formamidine, cesium, rubidium, potassium and sodium; B is selected from lead, at least one of tin, germanium and bismuth; X is selected from at least one of iodine, bromine and chlorine.
进一步地,所述印刷的方法选自刮涂、喷涂和狭缝涂布中的一种。Further, the printing method is selected from one of blade coating, spray coating and slit coating.
进一步地,步骤S1中,所述导电基底包括基板和透明电极,Further, in step S1, the conductive base includes a substrate and a transparent electrode,
其中,in,
所述基板选自柔性基板和刚性基板中的一种,所述柔性基板材料选自聚酰亚胺、聚对苯二甲酸乙二醇脂和聚醚砜树脂中的一种;所述刚性基板材料为玻璃;The substrate is selected from one of a flexible substrate and a rigid substrate, and the flexible substrate material is selected from one of polyimide, polyethylene terephthalate and polyethersulfone resin; the rigid substrate The material is glass;
所述透明电极选自氧化铟锡(ITO)、掺氟氧化锡(FTO)和掺铝氧化锌(AZO)中的一种。The transparent electrode is selected from one of indium tin oxide (ITO), fluorine-doped tin oxide (FTO) and aluminum-doped zinc oxide (AZO).
进一步地,步骤S1中,所述电子传输层材料选自TiO2和SnO2中的一种。Further, in step S1, the electron transport layer material is selected from one of TiO 2 and SnO 2 .
进一步地,所述空穴传输层的材料选自PTAA、P3HT、CuSCN、Spiro-OMeTAD和磷中的至少一种。Further, the material of the hole transport layer is selected from at least one of PTAA, P3HT, CuSCN, Spiro-OMeTAD and phosphorus.
进一步地,所述钙钛矿薄膜的厚度为200-20000nm。Further, the thickness of the perovskite thin film is 200-20000 nm.
进一步地,所述空穴传输层的厚度为5-200nm。Further, the thickness of the hole transport layer is 5-200 nm.
进一步地,步骤S2中,所述退火的温度为50-150℃。Further, in step S2, the temperature of the annealing is 50-150°C.
进一步地,本发明所述钙钛矿前驱体溶液为MAPbI3钙钛矿前驱体溶液。Further, the perovskite precursor solution of the present invention is a MAPbI 3 perovskite precursor solution.
本发明的有益效果如下:The beneficial effects of the present invention are as follows:
1.本发明公开的钙钛矿太阳能电池模组的制备方法,全过程在空气中进行,使用高温单面胶带贴合后对材料进行紫外臭氧处理,不需在氮气氛围下制备,且不使用激光刻蚀划线就能实现钙钛矿活性(P2)层和顶部电极(P3)的图案化,制备条件容易实现、简单可控,节约了制造成本,本发明采用的刮涂印刷法在制备薄膜层时对材料的利用率高,能够实现批量制备大面积组件,同时稳定性好、良品率高,有利于大规模工业化生产;1. The preparation method of the perovskite solar cell module disclosed in the present invention, the whole process is carried out in the air, and the material is subjected to ultraviolet ozone treatment after lamination with high-temperature single-sided tape, and does not need to be prepared in a nitrogen atmosphere, and does not use Laser etching and scribing can realize the patterning of the perovskite active (P2) layer and the top electrode (P3), the preparation conditions are easy to realize, simple and controllable, and the manufacturing cost is saved. The utilization rate of materials is high when the film layer is used, and large-area components can be prepared in batches, and at the same time, it has good stability and high yield, which is conducive to large-scale industrial production;
2.本发明对工艺进行了优化,制备的钙钛矿薄膜层是一步完成的,且不需加入反溶剂,操作简便,能够快速结晶且利于晶核增长,得到成膜均匀、晶粒尺寸大的薄膜,具备反应均一和可实现规模化等优势,提高了钙钛矿太阳能电池的光电转换效率。2. The present invention optimizes the process, the prepared perovskite thin film layer is completed in one step, and does not need to add anti-solvent, the operation is simple, it can crystallize quickly and is conducive to the growth of crystal nucleus, and the film formation is uniform and the grain size is large. The thin film has the advantages of uniform reaction and scalable, and improves the photoelectric conversion efficiency of perovskite solar cells.
附图说明Description of drawings
图1为本发明实施例1中制备的钙钛矿太阳能电池实物图。FIG. 1 is a physical diagram of the perovskite solar cell prepared in Example 1 of the present invention.
图2为本发明实施例1中制备的钙钛矿薄膜的SEM电子显微镜图片。FIG. 2 is a SEM electron microscope picture of the perovskite thin film prepared in Example 1 of the present invention.
具体实施方式Detailed ways
为了更清楚地说明本发明的技术方案,列举如下实施例,但本发明并不局限于此。In order to illustrate the technical solutions of the present invention more clearly, the following examples are given, but the present invention is not limited thereto.
下述实施例中所使用的实验方法如无特殊说明,均为常规方法;下述实施例中所用的试剂、材料等,如无特殊说明,均可从商业途径得到。The experimental methods used in the following examples are conventional methods unless otherwise specified; the reagents, materials, etc. used in the following examples can be obtained from commercial sources unless otherwise specified.
本发明实施例中,所述钙钛矿太阳能电池模组的制备方法均在空气氛围条件下进行。In the embodiments of the present invention, the preparation methods of the perovskite solar cell modules are all carried out under the condition of air atmosphere.
本发明实施例中,所述ITO玻璃基板和FTO玻璃基板购买自旭硝子玻璃公司。In the embodiment of the present invention, the ITO glass substrate and the FTO glass substrate were purchased from Asahi Glass Company.
本发明实施例中,所述高温胶带型号为3M公司7416J,宽度为2mm。In the embodiment of the present invention, the model of the high-temperature adhesive tape is 7416J of 3M company, and the width is 2 mm.
本发明实施例中,所述紫外臭氧处理仪器为UV照射机BZS250GF-TC。In the embodiment of the present invention, the ultraviolet ozone treatment instrument is a UV irradiation machine BZS250GF-TC.
本发明实施例中,所述钙钛矿前驱体溶液的制备方法为将PbI2和MAI加入DMF溶剂,配置为1M的溶液。In the embodiment of the present invention, the preparation method of the perovskite precursor solution is to add PbI 2 and MAI to the DMF solvent to configure a 1M solution.
本发明实施例中,所述空穴传输层溶液为20mg/ml的P3HT溶液或Spiro-OMeTAD溶液。In the embodiment of the present invention, the hole transport layer solution is a 20 mg/ml P3HT solution or a Spiro-OMeTAD solution.
本发明实施例中,所述碳浆料为深圳千代公司的导电碳浆CCI-305LD。In the embodiment of the present invention, the carbon paste is a conductive carbon paste CCI-305LD from Shenzhen Chiyo Company.
实施例1Example 1
一种钙钛矿太阳能电池模组的制备方法,包括如下步骤:A preparation method of a perovskite solar cell module, comprising the following steps:
S1.将高温胶带贴于10cm*10cm的ITO玻璃基板上,紫外臭氧处理后,撕除高温胶带,在经过处理的所述ITO玻璃基板上刮涂SnO2制备电子传输层,厚度为30nm;S1. Stick the high temperature tape on the ITO glass substrate of 10cm*10cm, after the ultraviolet ozone treatment, remove the high temperature tape, and scrape SnO on the treated ITO glass substrate to prepare an electron transport layer with a thickness of 30nm;
S2.将高温胶带贴于所述电子传输层上,紫外臭氧处理后,撕除高温胶带,在所述电子传输层上滴加MAPbI3钙钛矿前驱体溶液,刮涂所述MAPbI3钙钛矿前驱体溶液成膜,然后在100℃下退火30min,得到钙钛矿薄膜,其厚度为600nm;S2. Affix the high temperature tape on the electron transport layer, remove the high temperature tape after ultraviolet ozone treatment, drip the MAPbI 3 perovskite precursor solution on the electron transport layer, and scrape the MAPbI 3 perovskite The ore precursor solution was formed into a film, and then annealed at 100 °C for 30 min to obtain a perovskite film with a thickness of 600 nm;
S3.将高温胶带贴于所述钙钛矿薄膜上,滴加碳浆料,刮涂所述碳浆料制备低温碳电极,其厚度为3μm,得到所述钙钛矿太阳能电池模组。S3. Affix the high-temperature tape on the perovskite film, drop the carbon slurry, and scrape the carbon slurry to prepare a low-temperature carbon electrode with a thickness of 3 μm to obtain the perovskite solar cell module.
图1为本发明实施例1中制备的钙钛矿太阳能电池实物图。FIG. 1 is a physical diagram of the perovskite solar cell prepared in Example 1 of the present invention.
图2为本发明实施例1中制备的钙钛矿薄膜的SEM电子显微镜图片,根据图2可以看出本发明制备的钙钛矿薄膜成膜均匀,且尺寸较大。FIG. 2 is a SEM electron microscope picture of the perovskite film prepared in Example 1 of the present invention. According to FIG. 2, it can be seen that the perovskite film prepared by the present invention is uniform in film formation and large in size.
实施例2Example 2
一种钙钛矿太阳能电池模组的制备方法,包括如下步骤:A preparation method of a perovskite solar cell module, comprising the following steps:
S1.将高温胶带贴于10cm*10cm的ITO玻璃基板上,紫外臭氧处理后,撕除高温胶带,在经过处理的所述ITO柔性基板上刮涂SnO2制备电子传输层,厚度为30nm;S1. Stick the high temperature tape on the ITO glass substrate of 10cm*10cm, after the ultraviolet ozone treatment, remove the high temperature tape, and scrape the treated ITO flexible substrate with SnO to prepare an electron transport layer with a thickness of 30nm;
S2.将高温胶带贴于所述电子传输层上,紫外臭氧处理后,撕除高温胶带,在所述电子传输层上滴加MAPbI3钙钛矿前驱体溶液,刮涂所述MAPbI3钙钛矿前驱体溶液成膜,然后在100℃下退火30min,得到钙钛矿薄膜,其厚度为600nm;S2. Affix the high temperature tape on the electron transport layer, remove the high temperature tape after ultraviolet ozone treatment, drip the MAPbI 3 perovskite precursor solution on the electron transport layer, and scrape the MAPbI 3 perovskite The ore precursor solution was formed into a film, and then annealed at 100 °C for 30 min to obtain a perovskite film with a thickness of 600 nm;
S3.将P3HT空穴传输层溶液滴加到所述钙钛矿薄膜层上,刮涂所述P3HT空穴传输层溶液,得到空穴传输层,厚度为50nm;S3. dropping the P3HT hole transport layer solution onto the perovskite thin film layer, and scraping the P3HT hole transport layer solution to obtain a hole transport layer with a thickness of 50 nm;
S4.将高温胶带贴于所述空穴传输层上,滴加碳浆料,刮涂所述碳浆料制备低温碳电极,其厚度为3μm,得到所述钙钛矿太阳能电池模组。S4. Attach a high-temperature tape to the hole transport layer, drop a carbon slurry, and scrape the carbon slurry to prepare a low-temperature carbon electrode with a thickness of 3 μm to obtain the perovskite solar cell module.
实施例3Example 3
一种钙钛矿太阳能电池模组的制备方法,包括如下步骤:A preparation method of a perovskite solar cell module, comprising the following steps:
S1.将高温胶带贴于10cm*10cm的FTO玻璃基板上,紫外臭氧处理后,撕除高温胶带,刮涂SnO2制备电子传输层,厚度为30nm;S1. Stick the high temperature tape on the FTO glass substrate of 10cm*10cm, after ultraviolet ozone treatment, remove the high temperature tape, and scrape SnO 2 to prepare an electron transport layer with a thickness of 30nm;
S2.将高温胶带贴于所述电子传输层上,紫外臭氧处理后,撕除高温胶带,在所述电子传输层上滴加MAPbI3钙钛矿前驱体溶液,刮涂所述MAPbI3钙钛矿前驱体溶液成膜,然后在100℃下退火30min,得到钙钛矿薄膜,其厚度为600nm;S2. Affix the high temperature tape on the electron transport layer, remove the high temperature tape after ultraviolet ozone treatment, drip the MAPbI 3 perovskite precursor solution on the electron transport layer, and scrape the MAPbI 3 perovskite The ore precursor solution was formed into a film, and then annealed at 100 °C for 30 min to obtain a perovskite film with a thickness of 600 nm;
S3.将高温胶带贴于所述钙钛矿薄膜上,滴加碳浆料,刮涂所述碳浆料制备低温碳电极,其厚度为3μm,得到所述钙钛矿太阳能电池模组。S3. Affix the high-temperature tape on the perovskite film, drop the carbon slurry, and scrape the carbon slurry to prepare a low-temperature carbon electrode with a thickness of 3 μm to obtain the perovskite solar cell module.
实施例4Example 4
一种钙钛矿太阳能电池模组的制备方法,包括如下步骤:A preparation method of a perovskite solar cell module, comprising the following steps:
S1.将高温胶带贴于10cm*10cm的FTO玻璃基板上,紫外臭氧处理后,撕除高温胶带,刮涂SnO2制备电子传输层,厚度为30nm;S1. Stick the high temperature tape on the FTO glass substrate of 10cm*10cm, after ultraviolet ozone treatment, remove the high temperature tape, and scrape SnO 2 to prepare an electron transport layer with a thickness of 30nm;
S2.将高温胶带贴于所述电子传输层上,紫外臭氧处理后,撕除高温胶带,在所述电子传输层上滴加MAPbI3钙钛矿前驱体溶液,刮涂所述MAPbI3钙钛矿前驱体溶液成膜,然后在100℃下退火30min,得到钙钛矿薄膜,其厚度为600nm;S2. Affix the high temperature tape on the electron transport layer, remove the high temperature tape after ultraviolet ozone treatment, drip the MAPbI 3 perovskite precursor solution on the electron transport layer, and scrape the MAPbI 3 perovskite The ore precursor solution was formed into a film, and then annealed at 100 °C for 30 min to obtain a perovskite film with a thickness of 600 nm;
S3.将P3HT空穴传输层溶液滴加到所述钙钛矿薄膜层上,刮涂所述P3HT空穴传输层溶液,得到空穴传输层,厚度为50nm;S3. dropping the P3HT hole transport layer solution onto the perovskite thin film layer, and scraping the P3HT hole transport layer solution to obtain a hole transport layer with a thickness of 50 nm;
S4.将高温胶带贴于所述空穴传输层上,滴加碳浆料,刮涂所述碳浆料制备低温碳电极,其厚度为3μm,得到所述钙钛矿太阳能电池模组。S4. Attach a high-temperature tape to the hole transport layer, drop a carbon slurry, and scrape the carbon slurry to prepare a low-temperature carbon electrode with a thickness of 3 μm to obtain the perovskite solar cell module.
实施例5Example 5
一种钙钛矿太阳能电池模组的制备方法,包括如下步骤:A preparation method of a perovskite solar cell module, comprising the following steps:
S1.将高温胶带贴于10cm*10cm的ITO玻璃基板上,紫外臭氧处理后,撕除高温胶带,刮涂SnO2制备电子传输层,厚度为30nm;S1. Stick the high temperature tape on the ITO glass substrate of 10cm*10cm, after ultraviolet ozone treatment, remove the high temperature tape, and scrape SnO2 to prepare an electron transport layer with a thickness of 30nm;
S2.将高温胶带贴于所述电子传输层上,紫外臭氧处理后,撕除高温胶带,在所述电子传输层上滴加MAPbI3钙钛矿前驱体溶液,刮涂所述MAPbI3钙钛矿前驱体溶液成膜,然后在100℃下退火30min,得到钙钛矿薄膜,厚度为600nm;S2. Affix the high temperature tape on the electron transport layer, remove the high temperature tape after ultraviolet ozone treatment, drip the MAPbI 3 perovskite precursor solution on the electron transport layer, and scrape the MAPbI 3 perovskite The ore precursor solution was formed into a film, and then annealed at 100 °C for 30 min to obtain a perovskite film with a thickness of 600 nm;
S3.将Spiro-OMeTAD空穴传输层溶液滴加到所述钙钛矿薄膜层上,刮涂所述Spiro-OMeTAD空穴传输层溶液,得到空穴传输层,厚度为50nm;S3. drop the Spiro-OMeTAD hole transport layer solution onto the perovskite thin film layer, and scrape the Spiro-OMeTAD hole transport layer solution to obtain a hole transport layer with a thickness of 50 nm;
S4.将高温胶带贴于所述空穴传输层上,滴加碳浆料,刮涂所述碳浆料制备低温碳电极,厚度为3μm,得到所述钙钛矿太阳能电池模组。S4. Affix a high-temperature tape on the hole transport layer, drop a carbon slurry, and scrape the carbon slurry to prepare a low-temperature carbon electrode with a thickness of 3 μm to obtain the perovskite solar cell module.
对比例Comparative ratio
一种钙钛矿太阳能电池模组的制备方法,本对比例与实施例1的器件结构、各层材料均相同,区别在于:对比例在氮气手套箱环境中制备,其电子传输层、钙钛矿薄膜层和碳电极均通过旋涂法和手工擦线的方法制备。A preparation method of a perovskite solar cell module, this comparative example is the same as the device structure and the materials of each layer in Example 1, the difference is: the comparative example is prepared in a nitrogen glove box environment, and its electron transport layer, perovskite Mineral film layers and carbon electrodes were prepared by spin coating and manual wiping.
测试例test case
对实施例1-5和对比例制备的钙钛矿太阳能电池模组进行性能测试Performance testing of the perovskite solar cell modules prepared in Examples 1-5 and Comparative Examples
测试方法:testing method:
能量转换效率测试:将制备好的钙钛矿太阳能电池模组,放置在1个太阳的标准太阳能模拟器下,25℃,测试器件的I-V曲线,然后根据下式计算能量转换效率,Energy conversion efficiency test: place the prepared perovskite solar cell module under a standard solar simulator of 1 sun at 25°C, test the I-V curve of the device, and then calculate the energy conversion efficiency according to the following formula,
PCE=Jsc Voc FFPCE=Jsc Voc FF
其中Jsc是短路电流,Voc是开路电压,FF是填充因子。where Jsc is the short circuit current, Voc is the open circuit voltage, and FF is the fill factor.
测试结果:所得相关结果如表1所示。Test results: The relevant results obtained are shown in Table 1.
表1Table 1
对于本领域技术人员而言,显然本发明不限于上述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明。因此,无论从哪一点来看,均应将实施例看作是示范性的,而且是非限制性的,本发明的范围由所附权利要求而不是上述说明限定,因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。It will be apparent to those skilled in the art that the present invention is not limited to the details of the above-described exemplary embodiments, but that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments are to be regarded in all respects as illustrative and not restrictive, and the scope of the invention is defined by the appended claims rather than the foregoing description, which are therefore intended to fall within the scope of the appended claims. All changes within the meaning and range of the equivalents of , are included in the present invention.
此外,应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施例中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。In addition, it should be understood that although this specification is described in terms of embodiments, not each embodiment only includes an independent technical solution, and this description in the specification is only for the sake of clarity, and those skilled in the art should take the specification as a whole , the technical solutions in each embodiment can also be appropriately combined to form other implementations that can be understood by those skilled in the art.
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