CN114361301A - Method for interconnecting upper and lower conducting layers of ceramic substrate and substrate - Google Patents
Method for interconnecting upper and lower conducting layers of ceramic substrate and substrate Download PDFInfo
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- CN114361301A CN114361301A CN202210017367.9A CN202210017367A CN114361301A CN 114361301 A CN114361301 A CN 114361301A CN 202210017367 A CN202210017367 A CN 202210017367A CN 114361301 A CN114361301 A CN 114361301A
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Abstract
The invention discloses a method for interconnecting an upper conductive layer and a lower conductive layer of a ceramic substrate and the substrate, belonging to the technical field of power electronic device packaging. The method comprises the following steps: punching a through hole at a specified position on the ceramic substrate; penetrating the metal piece subjected to surface pretreatment into the through hole of the ceramic substrate to ensure that the single-chip or multi-chip ceramic substrate is connected in a penetrating way; then placing the ceramic substrate into a sintering furnace for sintering, so that the metal piece is combined with the wall of the ceramic through hole; cutting off the metal piece, and separating the ceramic substrates connected in series; grinding the ceramic through hole with the metal piece to be flat, and keeping the section of the metal piece flat; realizing double-sided copper plating metallization of the ceramic substrate by adopting a DBC or AMB process, a chemical plating electroplating process or a thick film or thin film process; and processing a required circuit pattern on the metal layer on the surface of the ceramic substrate, and cutting the circuit pattern into small units to realize interconnection of the upper and lower conducting layers of the metallized ceramic substrate.
Description
Technical Field
The invention belongs to the technical field of power electronic device packaging, in particular to the field of ceramic surface metallization and functionalization, particularly the field of a ceramic substrate directly coated with copper and an active metal solder ceramic substrate, and relates to a production process for interconnecting an upper conductive layer and a lower conductive layer of the ceramic substrate.
Background
The current methods for interconnecting the upper and lower conductive layers of the ceramic substrate are mainly classified into three types. The method comprises the steps of firstly, laser drilling a ceramic substrate, sintering a copper layer on the surface of the ceramic, then manually placing a copper disc (copper sheet) or a copper ball into a ceramic hole, sintering a copper layer on the other surface of the ceramic, and finally applying a certain pressure to the position of the hole to deform the upper copper layer and the lower copper layer on the surface of the ceramic substrate, so that the copper layers are fully contacted with the copper disc or the copper ball in the ceramic hole, and the upper copper layer and the lower copper layer are interconnected; the other method is to metallize the ceramic through hole first in a chemical plating or electroplating mode and then metallize the two sides of the ceramic, thereby realizing interconnection of the upper copper layer and the lower copper layer. Yet another approach is to fill the holes with a conductive electronic paste to achieve hole metallization. However, the three methods for interconnecting the upper and lower conductive layers of the metallized ceramic substrate have respective technical defects. Aiming at the first method for realizing interconnection of upper and lower copper layers of a metallized ceramic substrate by implanting copper discs (copper sheets) or copper balls, if the diameter of a punched hole on the ceramic substrate is too small or the number of the punched holes is too large, the process has huge workload and cannot realize the purpose of interconnection of upper and lower conductive layers of the substrate. Aiming at the second interconnection of the upper copper layer and the lower copper layer realized in a chemical plating or electroplating mode, the method has the risks of potential atmospheric pollution, water pollution and the like, and the process cost is higher. Taking the high-power LED as an example, the high-power LED needs to be punched more than 100 holes with an aperture of about 0.1mm generally by using the electrical signals of the upper and lower interconnection of the 109.5 × 54.5 × 0.50mm metal layer of the aluminum nitride (AlN) ceramic substrate, which is almost impossible to achieve if a copper disc is manually filled into the holes; if chemical plating and electroplating are adopted, the time and the cost are high; the third method of hole metallization by filling electronic paste is difficult to control, and the conductive performance is affected due to the existence of the glass phase of the conductive electronic paste, especially as the thickness of the ceramic and the diameter of the hole increase, the difficulty of discharging organic matters in the conductive electronic paste increases correspondingly.
Through retrieval, the Chinese patent application, No. CN105489559B, 2016, 04, 13, discloses a method for manufacturing an aluminum nitride substrate for a microwave power tube, the invention provides a method for manufacturing the aluminum nitride substrate for the microwave power tube, and metal wires are arranged on the surface layer of the structure; metallization of the side wall of the hole; the bottom surface is grounded and fully metalized, the multi-tube core is welded and interconnected on the surface layer metallization, and the grounding requirement is met through hole side wall metallization and bottom surface full metallization; by utilizing a multilayer co-firing process, aluminum nitride ceramics are selected as ceramic matrix materials, tungsten is selected as a metallization material, and hole sidewall metallization process is adopted to form upper and lower interlayer interconnection. The method adopts a mode of combining a hole side wall metallization process with a chemical nickel plating process and a chemical gold plating process to realize the multilayer interconnection of the substrates, and is favorable for solving the packaging interconnection heat dissipation problem of the SiC power tube or the GaN power tube, but the metallization of the ceramic substrate holes is realized by the chemical plating mode, the process is complex, the time is longer, the cost is higher, the environmental protection pressure is higher, and the mode of the invention can not be basically realized if the ceramic substrate holes are too many or too large.
Disclosure of Invention
1. Technical problem to be solved
The following problems exist in three methods for interconnecting upper and lower conductive layers of a ceramic substrate in the prior art:
the first method for realizing interconnection of upper and lower copper layers of a metallized ceramic substrate by implanting copper discs (copper sheets) or copper balls is characterized in that the process is large in workload and extremely low in efficiency, interconnection of upper and lower conductive layers of the substrate is not easy to realize, and operability is not available under the conditions that the diameter of a punched hole on the ceramic substrate is too small or the number of holes is large; the second is that the upper and lower copper layers are interconnected by chemical plating or electroplating, the process is complex, the time is long, the cost is high, the potential risks of atmospheric pollution, water pollution and the like exist, and the process cost is high; the third method of filling the conductive electronic paste is difficult to control, the conductive capability of the metallized hole is affected, and the discharge of organic matters in the conductive electronic paste is difficult.
Aiming at the problems in the prior art, the invention provides a method for interconnecting an upper conductive layer and a lower conductive layer of a ceramic substrate and the substrate thereof, so as to solve the defects and shortcomings in the prior art.
2. Technical scheme
In order to solve the above problems, the invention provides a method for interconnecting upper and lower conductive layers of a ceramic substrate, which has the following technical scheme:
s1, punching a through hole at a specified position on the ceramic substrate;
s2, performing surface treatment on the metal piece;
s3, penetrating the metal piece obtained through surface treatment into the through hole on the ceramic substrate, and penetrating and connecting the single-chip or multi-chip ceramic substrate;
s4, placing the single-piece or multi-piece ceramic substrate penetrating into the metal piece into a sintering device for sintering;
s5, cutting off the metal piece to separate the connected ceramic substrates after sintering;
s6, flattening the upper and lower surfaces of the ceramic substrate;
s7, metallizing the two sides of the ceramic substrate by a ceramic surface metallization process;
and S8, processing the metal layer on the ceramic substrate into required circuit patterns, and cutting the circuit patterns into small units to complete the interconnection of the upper and lower conductive layers of the ceramic substrate.
Further, the punching of the predetermined position on the ceramic substrate in step 1 refers to the laser punching used.
Further, the metal member is cut off in step 5 to separate the ceramic substrates connected in series, and the ceramic substrates are separated mechanically or chemically.
Further, the step 6 of planarizing the upper and lower surfaces of the ceramic substrate means that the metal wires protruding out of the ceramic through holes are polished to make the surface of the ceramic substrate and the cross section of the metal member in the same plane.
Further, the ceramic surface metallization process described in step 7 includes, but is not limited to, Active Metal brazing Copper cladding (AMB), Direct Bonded Copper substrate (DBC), Direct Copper substrate (DPC), thick film, thin film, and the like.
Further, in step 8, a desired circuit pattern is formed on the ceramic substrate by a process of film-coating, exposure, development, and etching.
Further, step 8 is to cut the ceramic substrate into small units by laser or mechanical cutting.
Further, the diameter of the through hole formed in the ceramic substrate in the step 1 is consistent with that of the copper wire, so that the metal piece and the through hole are kept in tight fit.
Further, a substrate with interconnected upper and lower conductive layers of a ceramic substrate, wherein the substrate material includes, but is not limited to, alumina, aluminum nitride, silicon carbide, zirconia toughened alumina; and inorganic substrates such as glass, sapphire substrates, and silicon oxide.
Further, the metal piece is a metal strip, a metal column, a metal wire or a metal needle.
3. Advantageous effects
Compared with the prior art, the invention has the beneficial effects that:
according to the method for interconnecting the upper conductive layer and the lower conductive layer of the ceramic substrate, the copper wire after pretreatment passes through the through hole on the ceramic substrate, the through hole is metallized by sintering, and then the copper sheet is sintered on the upper surface and the lower surface of the ceramic substrate, so that the through hole metallization of a plurality of ceramic substrates can be realized at one time, and therefore products with interconnected upper metal layers and lower metal layers can be rapidly produced in batches, the production efficiency is greatly improved, the multi-hole metallization and the through hole metallization of various types of ceramic substrates can be realized, and the method has high practicability and wide applicability. Such as: the metal piece adopts the metal copper wire, so that the copper wire preoxidation treatment mode can realize batch alumina ((Al)2O3) Ceramic substrate, aluminum nitride (AlN) ceramic substrate, zirconium oxide (ZrO) ceramic substrate2) The interconnection of the upper and lower metal layers of the ceramic substrate and the zirconia-doped reinforced alumina (ZTA) ceramic substrate is produced in batch; compared with the prior art, the productivity is improved by at least 5 times.
By adopting the way of pre-coating the copper wire with the active metal solder, the interconnected batch production of the upper and lower metal layers of non-oxide ceramic substrates such as silicon nitride, aluminum nitride, boron nitride, titanium nitride, silicon carbide and the like can be realized; compared with the prior art, the productivity is improved by at least 5 times. In addition, the invention can also quickly realize the upper and lower interconnection conduction electric signals of the metal layer of the aluminum nitride (AlN) ceramic substrate for the high-power LED, shortens the intersection period of the upper and lower interconnection ceramic layer substrates of the metal layer for the high-power LED by about 1/3, and solves the practical problems of long intersection period and high cost of the upper and lower interconnection ceramic substrates of the metal layer for the high-power LED.
Drawings
FIG. 1 is a schematic diagram of the interconnection of upper and lower conductive layers of a ceramic substrate;
FIG. 2 is a view showing a metal member penetrating through a through hole in a ceramic substrate;
FIG. 3 is a ceramic substrate stack sintering;
FIG. 4 is a view showing the metal member being cut off to separate the ceramic substrate;
FIG. 5 is a view of planarizing a ceramic substrate;
FIG. 6 illustrates metallization of the upper and lower surfaces of a ceramic substrate;
FIG. 7 is a schematic diagram of a desired circuit pattern;
FIG. 8 is a cut ceramic substrate;
fig. 9 is a view showing the ceramic substrate divided into units.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments; moreover, the embodiments are not relatively independent, and can be combined with each other according to needs, so that a better effect is achieved. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. For a further understanding of the invention, reference should be made to the following detailed description taken in conjunction with the accompanying drawings and examples.
The metal piece is a copper wire as an example to illustrate the specific embodiment of the invention. Fig. 1 is a schematic diagram showing the interconnection of upper and lower conductive layers of a ceramic substrate, and the specific steps are as follows:
as shown in fig. 2, in step 1 of the present invention, a through hole with a predetermined size is drilled at a predetermined position of the ceramic wafer by using laser; the through holes are obtained in a laser drilling mode, the diameter of each through hole and the diameter of each copper wire are matched with each other, so that the metal wires and the through holes are in close fit, the number of the through holes is larger than or equal to 1, and the specific drilling number can be selected according to actual requirements.
Further, the ceramic substrate to be perforated may be a ceramic substrate having a hole of a predetermined shape and position, such as a ceramic substrate having a predetermined shape and position purchased from a ceramic substrate supplier, and the material of the ceramic substrate may be alumina ceramic (Al)2O3) Zirconia-doped reinforced alumina ceramic (ZTA), zirconia ceramic (ZrO)2) Aluminum nitride ceramic (AlN) and silicon nitride ceramic (Si)3N4) Silicon carbide ceramic (SiC), and quartz glass (SiO)2) Or sapphire.
Referring to fig. 3, in step 2 of the present invention, the surface of the metal member is subjected to an oxidation treatment or a surface treatment by pre-coating with an active metal solder.
It should be noted that the material of the metal member may be copper, aluminum, copper alloy, such as copper-manganese alloy, copper-nickel alloy, etc., but normally, pure copper material is selected.
The processing method in this step will be described by taking a copper wire as an example. The method adopts a copper wire surface oxidation treatment mode, namely oxidizing a copper wire under the conditions that the oxidation temperature is less than 1000 ℃, the oxidation time is more than or equal to 5min, and the oxygen concentration is less than or equal to 500PPM, generating cuprous oxide on the surface of the copper wire after oxidation, and carrying out chemical reaction on the cuprous oxide and ceramic under the DBC process condition to ensure that the copper wire is sintered on the wall of the ceramic hole; the method for coating active metal solder is characterized in that the active metal solder such as Ag-Cu-Ti is coated on the surface of a copper wire, organic matters in the slurry are discharged within 60 minutes at the temperature of less than or equal to 500 ℃, and then the temperature of less than or equal to 720 ℃, the time of less than or equal to 30min and the vacuum degree of less than or equal to 10-3Pre-alloying the copper wire under the Pa condition. It should be noted that, in the treatment of the copper wire, whether the surface oxidation method or the active metal solder coating method is adopted, a layer of substance capable of generating chemical or metallurgical reaction with the hole wall of the ceramic substrate exists on the surface of the copper wire, so that the metal part is sintered on the hole wall of the ceramic substrate, and the metal part and the hole wall on the ceramic substrate are firmly and hermetically combinedThe purpose is.
As shown in fig. 4, in step 3 of the present invention, the copper wire obtained by surface treatment is loaded into a mechanical device with CCD positioning, and the device positions the copper wire to penetrate into the through hole on the ceramic substrate in step 1, and penetrates and connects the single or multiple ceramic substrates, so as to realize the close fit assembly of the copper wire and the ceramic hole. The copper line penetrates ceramic hole, can penetrate monolithic pottery and also can penetrate multi-disc pottery, realizes that multi-disc pottery establishes ties and is convenient for batch production, uses the mechanical equipment that has the CCD location, realizes penetrating the process automation degree in the ceramic substrate through-hole with the metalwork high, and feeding and the whole journey of snatching are gone on by mechanical equipment, need not artificial intervention, have improved the production efficiency who penetrates the metalwork and go into ceramic substrate through-hole process.
Referring to fig. 5, in step 4 of the present invention, the one or more ceramic substrates penetrated by the copper wires in step 3 are placed in a sintering apparatus for sintering. The copper wire surface oxidation treatment mode can be used for sintering in a nitrogen protection continuous sintering furnace at the actual temperature ranging from 1065 ℃ to 1083 ℃. The mode of coating the active metal solder is to sinter in a vacuum sintering furnace at the actual temperature of 700-1000 ℃. It is further noted that both sintering processes are prior art.
It is worth further explaining that the specific process of sintering the ceramic substrate with the copper wire inserted therein is as follows: placing the ceramic substrate in a vacuum sintering furnace for sintering, wherein the vacuum degree in the vacuum sintering furnace is 10-1Pa～10-4Pa, the temperature is 700-1000 ℃, and the heat preservation time is 1-90 min. It should be noted that the pretreated metal member of the assembly in this example is a metal member with a surface coated with an active metal solder, that is, the vacuum sintering furnace is suitable for sintering the metal member with a surface coated with an active metal solder.
Another example is that the specific process of sintering the ceramic substrate penetrated by the copper wire is as follows: and placing the ceramic substrate in an inert gas protection sintering furnace for sintering, wherein the oxygen content in the inert gas protection sintering furnace is 0-500 PPM, the temperature is 1065-1083 ℃, and the heat preservation time is 1-90 min. It is worth mentioning that the inert gas shielded sintering furnace is suitable for the sintering process of the copper wire subjected to the pre-oxidation process. Furthermore, the ceramic substrate penetrating into the copper wire is sintered, so that the through hole wall of the oxide ceramic substrate on the surface of the pretreated copper wire can generate chemical or metallurgical reaction, and the pretreated copper wire and the through hole wall of the sintered ceramic substrate are tightly combined together.
As shown in fig. 6, in step 5 of the present invention, the copper wire is cut to separate the single ceramic substrate or the plurality of ceramic substrates penetrating the copper wire in step 3, and the cutting method adopts a mechanical method and a chemical method: the mechanical mode can be that a blade is manually used for cutting the copper wire along the surface of the ceramic; the chemical method can be that a chemical liquid such as FeCl is utilized3+Cu—CuCl2+FeCl2Thereby etching away the copper exposed outside the hole.
FIG. 7 illustrates step 6 of planarizing the top and bottom surfaces of the ceramic substrate. In step 5, the copper wires are cut to obtain mutually separated ceramic substrates, a section of copper wire is remained on the surface of each ceramic substrate, and the step of flattening the ceramic substrates is to remove the remaining copper wires protruding out of the basic surface of the ceramic and outside the through holes. And a flattening process is finished by adopting a flattening machine, so that the surface of the ceramic substrate and the section of the metal wire are kept on the same horizontal plane. The method provides sufficient conditions for the metallization process of the upper surface and the lower surface of the ceramic substrate in the subsequent steps.
Referring to fig. 8, in step 7 of the present invention, the upper and lower surfaces of the ceramic substrate are metallized by a ceramic metallization process (e.g., DBC process, AMB process). It should be noted that the ceramic metallization process is prior art. Ceramic substrate surface metallization processes include, but are not limited to, direct copper clad ceramic substrate process (DBC), active metal brazing process (AMB), thick film printed electronic paste, sputtering, evaporation, chemical vapor deposition process (CVD), physical vapor deposition Process (PVD), direct electroplating electroless plating process, and the like.
Referring to fig. 9, in step 8 of the present invention, the desired circuit pattern is processed on the ceramic substrate and then cut into small units to complete the interconnection of the upper and lower copper layers of the ceramic substrate. Processing a required circuit pattern on the ceramic substrate through the processes of film pasting, exposure, development and etching; and then a unit product is produced by a laser cutting means, and interconnection of the upper metal layer and the lower metal layer is realized. The film pasting in the step refers to pressing the dry film on a copper sheet of a ceramic copper clad laminate (DBC) or AMB ceramic substrate; the exposure in this step means that a pattern is displayed by irradiating a predetermined position and portion of the dry film with a predetermined light; the development in this step means that the portion not irradiated with light is dissolved away by a chemical solution, and the portion irradiated with light is left, so that the entire pattern is displayed. Then, the circuit pattern is etched out by means of chemical etching. And finally, cutting the substrate into small units in a laser cutting mode, so that interconnection of the upper copper layer and the lower copper layer of the metallized ceramic substrate can be realized.
According to the method for the up-and-down conductive interconnection of the ceramic substrates, through holes of the ceramic substrates can be metallized by penetrating the preprocessed copper wires into the through holes of the ceramic substrates at one time, so that batch rapid production can be realized, and the production efficiency is greatly improved. Furthermore, the method can realize porous metallization and through hole metallization of various types of ceramic substrates, and has strong practicability and wide application.
It should be further noted that, aiming at excessive or too small through holes on the ceramic substrate, the interconnection of the upper and lower conducting layers of the ceramic substrate is difficult to realize by adopting the process in the prior art, and the process of sintering after the copper wire is pretreated and penetrates through the through holes of the ceramic substrate is utilized, so that the aim of air tightness combination of the copper wire and the hole walls on the ceramic substrate, which can be firm, is realized, the reliability of the product is improved, and the adopted process is simple and practical, environment-friendly and economical, and has good application prospect.
Example 1
In the present embodiment, the method for interconnecting the upper and lower conductive layers of the metallized ceramic substrate is adopted, specifically, the method for interconnecting the upper and lower conductive layers of the alumina ceramic substrate is described by taking the aluminum nitride ceramic substrate as an example, and the specific steps are as follows,
step 1: 56 laser-drilled aluminum nitride ceramic substrates with the specification of 138 × 190 × 0.635mm, wherein each aperture is 1.00 mm;
step 2: 56 pieces are specified as
The copper wire is subjected to surface pretreatment by using Ag-Cu-Ti2Coating copper wires with solder, and discharging organic components in the solder under the conditions of 450 ℃ and 35 min;
and step 3: penetrating 56 pretreated copper wires into 56 ceramic holes, and connecting 8 aluminum nitride ceramic substrates in series; so that the copper wire is tightly matched with the wall of the ceramic through hole;
and 4, step 4: placing the serially connected 8 aluminum nitride ceramic substrates in a vacuum sintering furnace for sintering, wherein the vacuum degree in the vacuum sintering furnace is 10-3Pa, the sintering temperature is 870 ℃, and the sintering time is 5 min;
and 5: cutting off the copper wire and separating the aluminum nitride ceramic substrate;
step 6: removing the excessive copper wires outside the holes to ensure that the surface of the aluminum nitride ceramic substrate and the cross section of the copper wires are kept on the same horizontal plane;
and 7: copper is metallized on the two sides of the aluminum nitride ceramic substrate by adopting an AMB process;
and 8: and processing a circuit pattern, and laser scribing a matrix of 7-8. It should be noted that the laser scribe is a 7 × 8 matrix designed to maximize the utilization of the ceramic according to the product area of the customer and the specification of the ceramic; and breaking the aluminum nitride AMB product containing the 7-by-8 matrix into small units to complete the upper and lower interconnection of the metal layers of the aluminum nitride ceramic substrate.
Example 2
In the present embodiment, the method for interconnecting the upper and lower conductive layers of the metallized ceramic substrate is adopted, and specifically, the method for interconnecting the upper and lower conductive layers of the silicon nitride ceramic substrate is described by taking the silicon nitride ceramic substrate as an example in the following specific steps,
step 1: punching 80 holes in a silicon nitride ceramic substrate with the specification of 138 × 190 × 0.32mm, wherein the hole diameter is 0.40 mm;
step 2: 80 pieces are specified as
The copper wire is pre-coated with AgCuTi2 solder, dried at 450 deg.C for 30min, and dried at 700 deg.C for 5min and 10min-3Prealloying under the condition of Pa;
and step 3: penetrating 80 copper wires subjected to surface treatment into corresponding 80 ceramic holes, and connecting 10 silicon nitride ceramic substrates in series;
and 4, step 4: 10 silicon nitride ceramic substrates connected in series are placed in a vacuum sintering furnace for sintering, and the vacuum degree in the vacuum sintering furnace is 10-3Pa, the sintering temperature is 860 ℃, and the sintering time is 15 minutes;
and 5: cooling, taking out the assembly body, cutting off the copper wires, and separating each ceramic substrate;
step 6: removing the excess copper wire outside the hole;
and 7: metallizing the two sides of the silicon nitride ceramic substrate simultaneously by adopting an AMB process;
and 8: and processing a circuit pattern, and laser scribing into a matrix of 5-8. It should be noted that the laser scribe is a 5 × 8 matrix designed to maximize the utilization of the ceramic according to the product area of the customer and the specification of the ceramic; and breaking the DBC product containing the 5-by-8 matrix into small units to complete the upper and lower interconnection of the metal layers of the silicon nitride ceramic substrate.
Example 3
The present embodiment adopts the above-mentioned method for interconnecting the upper and lower conductive layers of a metallized ceramic substrate, and particularly, the present embodiment takes an aluminum nitride thick film ceramic substrate as an example to illustrate the method for interconnecting the upper and lower conductive layers of an aluminum nitride thick film ceramic substrate, and comprises the following specific steps,
step 1: 48 holes are punched in the aluminum nitride ceramic substrate with the specification of 138 × 190 × 0.50mm, and the hole diameter is 0.50 mm;
step 2: the specification of 48 roots is as follows
The copper wire is pre-coated with AgCuTi2 solder, dried at 450 deg.C for 30min, and dried at 700 deg.C for 5min and 10min-3Prealloying under the condition of Pa;
and step 3: penetrating 48 copper wires subjected to surface treatment into corresponding 48 ceramic holes, and connecting 10 aluminum nitride ceramic substrates in series;
and 4, step 4: placing the assembled assembly body in a vacuum sintering furnace, wherein the vacuum degree in the vacuum sintering furnace is 10-3Pa, 890 ℃ and 10min of heat preservation time;
and 5: cooling, taking out the assembly body, cutting off the copper wires, and separating each ceramic substrate;
step 6: removing the excess copper wire outside the hole;
and 7: adopting a thick film process to metalize the two sides of the aluminum nitride ceramic substrate, printing copper slurry on the surface of the ceramic by a screen printer, removing glue, and finally sintering;
and 8: processing a circuit pattern required by a customer, and laser scribing the aluminum nitride ceramic substrate into a 4 x 6 matrix; it should be noted that the laser scribe is a 4 × 6 matrix designed to maximize the utilization of the ceramic according to the product area of the customer and the specification of the ceramic; and breaking the product containing the 4-6 matrix into small units to complete the upper and lower interconnection of the metal layers of the aluminum nitride thick film metalized product.
Example 4
In the present embodiment, the method for interconnecting the upper and lower conductive layers of the metallized ceramic substrate is adopted, specifically, the method for interconnecting the upper and lower conductive layers of the alumina ceramic substrate is described by taking the alumina ceramic substrate as an example, and the specific steps are as follows,
step 1: 56 laser-drilled holes are formed in an aluminum oxide ceramic substrate with the specification of 138 × 190 × 0.635mm, and the diameter of each hole is 0.60 mm;
step 2: 56 pieces are specified as
The copper wire is subjected to surface pre-oxidation treatment, and the copper wire is oxidized under the conditions that the oxygen content is 300PPM, the pre-oxidation temperature is 450 ℃ and the heat preservation time is 10 min;
and step 3: 56 copper wires subjected to preoxidation treatment penetrate into 56 ceramic holes and are connected with 8 alumina ceramic substrates in series;
and 4, step 4: placing the 8 aluminum oxide ceramic substrates connected in series in an inert gas protection sintering furnace for sintering, wherein the conditions are that the oxygen content is 100PPM, the sintering temperature is 1073 ℃, and the heat preservation time is 10 min;
and 5: cutting off the copper wires and separating the ceramic substrates;
step 6: removing the excessive copper wires outside the holes, so that the surface of the alumina ceramic substrate and the cross section of the copper wires are kept on the same horizontal plane;
and 7: adopting a DBC process to carry out copper metallization on the two sides of the alumina ceramic substrate under the conditions that the oxygen content is 100PPM, the sintering temperature is 1073 ℃, and the heat preservation time is 10 min;
and 8: and processing a circuit pattern, and laser scribing a matrix of 7-8. It should be noted that the laser scribe is a 7 × 8 matrix designed to maximize the utilization of the ceramic according to the product area of the customer and the specification of the ceramic; and breaking the product containing the 7-8 matrix into small units to complete the up-and-down interconnection of the metal layers of the alumina product.
Example 5
In the present embodiment, the method for interconnecting the upper and lower conductive layers of the metallized ceramic substrate is adopted, and specifically, the present embodiment uses quartz glass (SiO)2) The method for interconnecting the upper and lower conductive layers of a quartz glass ceramic substrate is described by taking a ceramic substrate as an example, and comprises the following steps,
step 1: 20 holes are punched in a quartz glass ceramic substrate with the specification of 60 × 1.50mm, and the hole diameter is 0.50 mm;
step 2: 20 pieces are specified as
The copper wire is oxidized under the conditions that the oxygen content is 800PPM, the sintering temperature is 400 ℃, and the heat preservation time is 5 min;
and step 3: penetrating 20 copper wires subjected to surface treatment into corresponding 20 ceramic holes, and connecting 10 quartz glass ceramic substrates in series;
and 4, step 4: placing the assembled assembly body in a nitrogen protection sintering furnace, wherein the oxygen content in the sintering furnace is 150PPM, the temperature is 1074 ℃, and the heat preservation time is 5 min;
and 5: cooling, taking out the assembly body, cutting off the copper wires, and separating each ceramic substrate;
step 6: removing the excess copper wire outside the hole;
and 7: adopting thick film process to metalize two sides of quartz glass ceramic substrate, using screen printer to print copper paste on SiO2Drying and sintering two sides of quartz glass;
and 8: processing a circuit pattern required by a customer, and scribing the quartz glass ceramic substrate into a 4 x 5 matrix by laser; it should be noted that the laser scribe is a 4 × 5 matrix designed to maximize the utilization of the ceramic according to the product area of the customer and the specification of the ceramic; and breaking the product containing the 4-5 matrix into small units to complete the up-and-down interconnection of the metal layers of the quartz glass ceramic substrate product.
The invention and its embodiments have been described above schematically, without limitation, and the invention can be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The representation in the drawings is only one of the embodiments of the invention, the actual construction is not limited thereto, and any reference signs in the claims shall not limit the claims concerned. Therefore, if a person skilled in the art receives the teachings of the present invention, without inventive design, a similar structure and an embodiment to the above technical solution should be covered by the protection scope of the present patent. Furthermore, the word "comprising" does not exclude other elements or steps, and the word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. Several of the elements recited in the product claims may also be implemented by one element in software or hardware. The terms first, second, etc. are used to denote names, but not any particular order.
Claims (10)
1. A method for interconnecting upper and lower conductive layers of a ceramic substrate comprises the following steps,
s1, punching a through hole at a specified position on the ceramic substrate;
s2, performing surface treatment on the metal piece;
s3, penetrating the metal piece obtained through surface treatment into the through hole on the ceramic substrate, and penetrating and connecting the single-chip or multi-chip ceramic substrate;
s4, placing the single-piece or multi-piece ceramic substrate penetrating into the metal piece into a sintering device for sintering;
s5, cutting off the metal piece to separate the connected ceramic substrates after sintering;
s6, flattening the upper and lower surfaces of the ceramic substrate;
s7, metallizing the two sides of the ceramic substrate by a ceramic surface metallization process;
and S8, cutting the metal layer of the ceramic substrate into small units after processing the required circuit pattern, and completing the interconnection of the upper and lower conductive layers of the ceramic substrate.
2. The method of claim 1, wherein the ceramic plate is perforated at predetermined locations by laser drilling.
3. The method as claimed in claim 1, wherein the cutting metal member separates the connected ceramic substrates mechanically or chemically.
4. The method as claimed in claim 1, wherein the step of planarizing the top and bottom surfaces of the ceramic substrate is performed by polishing the metal member protruding from the ceramic via hole so that the cross-sections of the ceramic substrate and the metal member are maintained in the same plane.
5. The method of claim 1, wherein the metallization of both sides of the ceramic substrate is performed by coating the surface of the ceramic substrate with a metal layer or film by a process including but not limited to AMB, DBC, DPC, electroless plating, thick film or thin film.
6. The method for interconnecting the upper and lower conductive layers of the ceramic substrate as claimed in claim 1, wherein the step of processing the desired circuit pattern on the ceramic substrate is to process the desired circuit pattern on the metallized ceramic substrate by the processes of film pasting, exposure, development and etching.
7. The method as claimed in claim 1, wherein the step of cutting the ceramic substrate into small units after processing the desired circuit pattern on the ceramic substrate is performed by laser or mechanical cutting.
8. The method of claim 2, wherein the diameter of the through hole is consistent with the diameter of the metal member, so that the metal member and the ceramic through hole are tightly fitted.
9. The method as claimed in any one of claims 1 to 8, wherein the metal member is a metal strip, a metal column, a metal wire or a metal needle.
10. A substrate with interconnected upper and lower conductive layers of a ceramic substrate, wherein the substrate material includes but is not limited to alumina, aluminum nitride, silicon carbide, zirconia toughened alumina; and inorganic substrates such as glass, sapphire substrates, and silicon oxide.
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| CN202210017367.9A CN114361301A (en) | 2022-01-07 | 2022-01-07 | Method for interconnecting upper and lower conducting layers of ceramic substrate and substrate |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050277282A1 (en) * | 2004-06-14 | 2005-12-15 | Shinko Electric Industries Co., Ltd. | Method of manufacturing wiring substrate |
| CN104064478A (en) * | 2014-06-24 | 2014-09-24 | 南京航空航天大学 | Preparation method for copper/aluminium nitride ceramic composite heat-conductive substrate |
| CN111787710A (en) * | 2020-07-20 | 2020-10-16 | 乐健科技（珠海）有限公司 | Preparation method of ceramic circuit board |
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2022
- 2022-01-07 CN CN202210017367.9A patent/CN114361301A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050277282A1 (en) * | 2004-06-14 | 2005-12-15 | Shinko Electric Industries Co., Ltd. | Method of manufacturing wiring substrate |
| CN104064478A (en) * | 2014-06-24 | 2014-09-24 | 南京航空航天大学 | Preparation method for copper/aluminium nitride ceramic composite heat-conductive substrate |
| CN111787710A (en) * | 2020-07-20 | 2020-10-16 | 乐健科技（珠海）有限公司 | Preparation method of ceramic circuit board |
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