CN114361022A - Method, storage medium, device and device for reducing thickness of workpiece - Google Patents

Abstract

The embodiment of the invention discloses a method, a storage medium, a device and a device for reducing the thickness of a workpiece, which solve the problem that a tool mark SM is left on the back of the workpiece by adding a film flattening step; further, by improving the measurement mode of the controlled quantity, the grinding and etching methods are respectively optimized in the thinning treatment. Firstly, the embodiment of the invention solves the problems of cutter marks SM and laser annealing cracks through the planarization step after the front surface is pasted with the film; secondly, the embodiment of the invention adopts Non-Contact measurement NCG (Non-Contact Gauges) to replace Contact measurement, thus solving the problem of closed-loop control of the thickness; thirdly, the embodiment of the invention also adds the non-contact measurement NCG in the wet etching, solves the problem that the etching rate ER (etch ratio) of the wet etching is influenced by the service life of the etching solution, introduces the detection of the control quantity and realizes the closed-loop control; further, the thickness fluctuation of WTW (wafer To wafer) wafers is inhibited, and the product yield and the product consistency are improved.

Description

Method, storage medium, device and device for reducing thickness of workpiece

Technical Field

The invention belongs to the technical field of microelectronics, and particularly relates to a method, a storage medium, a device and a device for reducing the thickness of a workpiece.

Background

Thinning is a necessary step for packaging a front graphic workpiece, and the technical problems in the process are mainly two: one is to avoid introducing undesirable by-products or new negative technical problems during thinning; for example, the thinning often brings a cutting mark sm (saw mark), and further cracks may occur in the subsequent annealing operation; secondly, how to obtain a uniform target value or workpiece characteristics after thinning; for example to obtain a uniform workpiece thickness; i.e. how to obtain a workpiece with high consistency.

Disclosure of Invention

The embodiment of the invention discloses a method for reducing the thickness of a workpiece, which solves the problem that a tool mark SM is left on the back surface of the workpiece by adding a film flattening step; further, by improving the measurement mode of the controlled quantity, the grinding and etching methods are respectively optimized in the thinning treatment.

Firstly, the embodiment of the invention solves the problems of cutter marks SM and laser annealing cracks through the planarization step after the front surface is pasted with the film.

In particular, after the transfer of the wafer or workpiece feature pattern is completed, the workpiece surface tends to exhibit a more complex topography. These features include steps, grooves, etc. when a protective film or the like is applied, a complex feature is formed on the surface of the flexible protective film or film.

As mentioned above, the wafer or the workpiece has already been patterned by the previous process; it is desirable to minimize the risk of intrusion during subsequent fabrication, including packaging.

Typically, a patterning process constructs a feature pattern or functional layer on a wafer or workpiece; the first end face of the characteristic pattern or the functional layer is connected with the second end face of the wafer or the workpiece to form a whole; forming the object of processing required by embodiments of the present invention.

Laying a first end face of a first adhesive film or protective film on the second end face of the feature pattern or the functional layer; and protecting or carrying out related process operation on the characteristic pattern or the functional layer.

And the second end face of the first adhesive film or the protective film follows the feature pattern or the surface layer form change of the functional layer to form a fourth end face of the first adhesive film or the protective film.

Polishing or flattening the fourth end surface of the first adhesive film or the protective film to obtain a sixth end surface of the first adhesive film or the protective film; therefore, the transition and buffering of the complex shape of the surface of the wafer or the workpiece through the first film or the protective film are eliminated, and the influence of the shape change of the characteristic pattern or the functional layer on the thinning treatment in the subsequent thinning treatment is effectively reduced.

Fixing the sixth end face of the first adhesive film or the protective film on the bearing table or the workbench; exposing a first end face of the wafer or the workpiece to an operation face of the grinding device; and preparing for subsequent thinning treatment.

The thinning treatment can be generally realized by adopting a grinding or etching method; specifically, a first end face of the wafer or the workpiece is ground, etched or reduced to thin the wafer or the workpiece to obtain a target workpiece.

Further, in order to ensure that the processing of the device or product is not disturbed as much as possible, the feature pattern or the functional layer should not change the morphology, the step distribution and/or the thickness before and after the thinning processing; the electrical characteristics and connection relationships thereof are maintained or maintained as much as possible.

Further, the end face of the target workpiece is thinned, and the end face of the target workpiece comprises a third end face of the wafer or the workpiece obtained after the first end face of the wafer or the workpiece is thinned.

Further, the feature pattern or the functional layer may be non-uniform in thickness and/or comprise a step-like topography of the surface layer; if the planarization process is not performed by the method disclosed by the embodiment of the invention, the thickness of the wafer or the workpiece is interfered by the surface topography, and a tool mark or other defects are formed on the surface of the target workpiece.

Typically, the total thickness of the thinned target workpiece is between 50 to 100 um.

Secondly, the embodiment of the invention adopts Non-Contact measurement NCG (Non-Contact Gauges) to replace Contact measurement, thereby solving the problem of closed-loop control of the thickness.

The embodiment of the method of the invention discloses a step for detecting the thickness of a wafer or a workpiece; the thickness measurement value is fed back to the thinning control system in real time, so that the closed-loop control of the thinning thickness is realized, and the thickness of the wafer or the workpiece is controlled within a preset range according to the system precision level.

Specifically, closed-loop control of the thickness is performed by detecting the difference between the thickness of the wafer or the workpiece and a target thickness value; control of the grinding depth and/or grinding duration is obtained, thereby achieving precise thickness control during grinding.

The thickness measurement of the embodiment of the invention comprises a non-contact measurement method of the thickness of the wafer or the workpiece, which can be completed by a non-contact detection device; of course, thickness values obtained by other types of sensors are equally applicable to embodiments of the present invention, provided that they can obtain thickness values of a preset precision.

Thirdly, the embodiment of the invention also adds the non-contact measurement NCG in the wet etching, solves the problem that the etching rate ER (etch ratio) of the wet etching is influenced by the service life of the etching solution, introduces the detection of the control quantity and realizes the closed-loop control; further, the thickness fluctuation of WTW (wafer To wafer) wafers is inhibited, and the product yield and the product consistency are improved.

Further, the workpiece is typically made of a semiconductor material, and thus the disclosed method is applicable to the preparation of semiconductor workpieces, products; common semiconductor materials including Si, SiC, GaN, etc., will be suitable for use in the applications of embodiments of the present invention.

Furthermore, the first end face of the wafer or the workpiece can be etched to reduce the thickness of the first end face; the specific process can be selected according to the material of the workpiece; wherein the etching method comprises wet etching.

In particular, in order to make the thickness reduction process controlled, the grinding progress can be managed by a thickness closed-loop control module, device/system; the thickness closed-loop control detects real-time thickness values of the wafer or workpiece for feedback to a closed-loop control module, device/system.

The thickness of the wafer or the workpiece is detected, and the error between the thickness of the wafer or the workpiece and the target value is smaller than a preset value.

In particular, the thickness of the wafer or workpiece is obtained using non-contact measurement.

Further, the thickness of the target workpiece or the thickness of the workpiece before and after etching is reduced by measuring; the current etching rate can be calculated in real time; for feeding back the state of the etching capability for the control system.

The thickness fluctuation of the wafer or the workpiece can be compensated by measuring the thickness of the wafer or the workpiece to be processed and adjusting the processing time of wet etching by taking the real-time etching rate as a parameter.

Before the first film or the protective film is removed, the adopted thinning process comprises a Taiko ultra-thin grinding process for thinning the thickness of the wafer or the workpiece and ensuring certain rigidity or flexural strength of the local part of the wafer or the workpiece in the processing process.

The storage medium for implementing the method also belongs to a class of embodiments disclosed in the implementation of the present invention, and when the computer program stored in the storage medium is executed by a microprocessor, the storage medium is used for implementing a certain corresponding method of the present invention.

Further, the embodiment of the invention also discloses a thinning control device, which comprises a film flattening unit, a thickness detection unit and a thinning processing unit; the thinning processing unit comprises a grinding unit and an etching unit.

The film flattening unit is used for polishing or flattening the fourth end face of the first adhesive film or the protective film to obtain a sixth end face of the first adhesive film or the protective film; such that subsequent grinding of the wafer or workpiece reduces the effect from the topography of the feature.

The thickness detection unit measures the thickness of the thinned target workpiece or the thickness of the workpiece before and after etching; calculating the etching rate in real time; and measuring the thickness of the wafer or the workpiece to be processed, adjusting the processing time of wet etching by taking the real-time etching rate as a parameter, and compensating the fluctuation of the thickness of the wafer or the workpiece.

The thinning processing unit fixes the sixth end face of the first film or the protective film on the bearing table or the workbench; the first end face of the wafer or workpiece is exposed to the working face of the grinding device in preparation for thinning.

The grinding unit and/or the etching unit grinds, etches or reduces the first end face of the wafer or the workpiece so as to thin the wafer or the workpiece and obtain a target workpiece.

Further, before the operation of the film flattening unit, a wafer or a workpiece to be thinned is prepared; wherein, the wafer or the workpiece is subjected to the graphical process of the previous procedure; the patterning process constructs a feature pattern or functional layer on the wafer or workpiece to achieve corresponding electrical or physical properties of the workpiece.

Wherein, the first end face of the characteristic pattern or the functional layer is connected with the second end face of the wafer or the workpiece; laying a first end face of a first sticking film or a first protective film on the second end face of the feature pattern or the functional layer; and the second end face of the first adhesive film or the protective film follows the feature pattern or the surface layer form change of the functional layer to form a fourth end face of the first adhesive film or the protective film.

The embodiment of the invention also discloses a power device and an implementation process thereof, wherein the power device also comprises an ion implantation step, an annealing step and a back metal treatment step in the construction process of the device; especially for power devices, the invention is also applicable to the implementation, and the embodiment of the invention also discloses corresponding content for IGBTs.

In the implementation process of the invention, the method can also comprise a second film or protective film laying step, a process frame installation step, an Taizhou ring cutting step and an Taizhou ring removing step; after the second film or the protective film is laid, the Taizhou ring can be cut and removed; the Taibo ring is from the Taibo ultra-thin grinding process of the previous process, in order to improve the processing characteristic or mechanical characteristic of the wafer or work piece.

It should be noted that the terms "first", "second", and the like are used herein only for describing the components in the technical solution, and do not constitute a limitation on the technical solution, and are not understood as an indication or suggestion of the importance of the corresponding component; an element in the similar language "first", "second", etc. means that in the corresponding embodiment, the element includes at least one.

Drawings

To more clearly illustrate the technical solutions of the present invention and to facilitate further understanding of the technical effects, technical features and objects of the present invention, the present invention will be described in detail with reference to the accompanying drawings, which form an essential part of the specification, and which are used together with the embodiments of the present invention to illustrate the technical solutions of the present invention, but do not limit the present invention.

The same reference numerals in the drawings denote the same elements, and in particular:

FIG. 1 is a schematic view of the surface morphology of a workpiece before a first process film is applied in accordance with an embodiment of the present invention;

FIG. 2 is a schematic view of the surface morphology of a workpiece after a first process film is applied thereto according to an embodiment of the present invention;

FIG. 3 is a schematic view of a first process film planarization operation in accordance with an embodiment of the present invention;

FIG. 4 is a schematic view of a substrate/single crystal silicon thinning operation in accordance with an embodiment of the present invention;

FIG. 5 is a schematic view of a state of completion of a thinning operation of a substrate/single crystal silicon according to an embodiment of the present invention;

FIG. 6 is a schematic view of a finished product of a substrate/single crystal silicon thinning operation according to an embodiment of the method of the present invention;

FIG. 7 is a schematic view of a first process film planarization device in accordance with an embodiment of the present invention;

FIG. 8 is a graph comparing the method of the present invention to a prior art total thickness variation TTV;

FIG. 9 is a photograph of a prior art saw tooth trace after grinding;

FIG. 10 is a photograph of an embodiment of a method of the present invention without jaggies;

FIG. 11 is a schematic view of a non-contact measurement structure according to an embodiment of the present invention;

FIG. 12 is a schematic diagram of non-contact measurement of reflected waves at different interfaces according to an embodiment of the present invention;

FIG. 13 is a schematic illustration of a measurement failure caused by impurities according to an embodiment of the present invention;

FIG. 14 is a comparison graph of the back wet etching precision improvement effect according to the embodiment of the present invention;

FIG. 15 is a graph of thickness control result fluctuation versus time according to an embodiment of the present invention;

FIG. 16 is a schematic flow chart of an embodiment of the method of the present invention;

FIG. 17 is a block diagram of the structure of the apparatus according to the present invention.

Wherein:

10-a thinning control device for controlling the thinning of the thin film,

11-a step of transferring the pattern,

22-a step of planarization of the film,

33-thinning execution step;

100-a wafer or a substrate,

101-a first end face of a wafer or workpiece,

102-a second end face of the wafer or substrate,

103-the first end face of the thinned wafer or substrate;

111-a film planarization unit;

200-a feature pattern or a functional layer,

201-feature pattern or functional layer first end face,

202-feature pattern or functional layer second end face,

222-a thickness detection unit;

300-a first adhesive or protective film,

301-first adhesive or protective film first end face,

302-first adhesive or protective film second end face,

303-the third end face of the first adhesive film or protective film,

304-first adhesive film or protective film fourth end face,

306-first adhesive film or protective film sixth end face;

331-a grinding unit for grinding the material,

332-etching the unit(s) of the wafer,

333-thinning processing unit;

400-a work table or carrier tray,

500-a first polishing unit or head,

510-a first thinning grinding unit or first thinning grinding head,

520-a first thinning grinding unit or a first thinning grinding head first base plate;

610-first process film planarizer top view,

620-first process film planarizer side view,

630-enlarged detail view of the first polishing unit or the first polishing head;

700-a non-contact probe head for measuring,

710-the first measurement waveform,

720-second measurement waveform.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and examples. Of course, the following specific examples are provided only for explaining the technical solutions of the present invention, and are not intended to limit the present invention. In addition, the portions shown in the embodiments or the drawings are only illustrations of the relevant portions of the present invention, and are not all of the present invention.

As shown in fig. 1, a wafer or workpiece 100 to be thinned is prepared; wherein the wafer or workpiece 100 has completed the patterning process of the previous process; the patterning process constructs a feature pattern or functional layer 200 on the wafer or workpiece 100; the first end 201 of the feature or functional layer 200 is in contact with the second end 102 of the wafer or workpiece 100.

As shown in fig. 1 and 2, a first end surface 301 of a first adhesive or protective film 300 is applied on a second end surface 202 of a feature or functional layer 200; the first film or protective film second end face 302 follows the feature pattern or the surface layer morphology change of the functional layer 200 to form a first film or protective film fourth end face 304.

As shown in fig. 3, the fourth end face 304 of the first adhesive film or protective film is polished or planarized to obtain a sixth end face 306 of the first adhesive film or protective film.

Referring to fig. 4, the sixth end surface 306 of the first adhesive film or protective film is fixed on a carrier or a worktable 400; exposing the first end surface 101 of the wafer or workpiece to the working surface of the polishing apparatus 510, 520.

Referring to fig. 5 and 6, the thinning target workpiece 999 is obtained by grinding, etching or otherwise reducing the first end face 101 of the wafer or workpiece to thin the wafer or workpiece 100.

Wherein, the feature pattern or the functional layer 200 does not change morphology, step distribution and/or thickness before and after thinning; the end face of the thinning target workpiece 999 includes a third end face 103 of the wafer or workpiece obtained by thinning the first end face 101 of the wafer or workpiece.

Further, the feature pattern or functional layer 200 is non-uniform in thickness and/or comprises a step-like skin topography. In an embodiment of the present invention, the total thickness of the thinned target workpiece 999 is between 50 to 100 um.

Further, by the step of detecting the thickness of the wafer or workpiece 100; comparing the difference between the thickness of the wafer or workpiece 100 and the target thickness value to perform closed-loop thickness control; control of the grinding depth and/or grinding duration is obtained.

Wherein the measurement of the thickness of the wafer or workpiece 100 is done using a non-contact device. In the embodiment of the invention, the workpiece is born by Si.

Further, the first end face 101 of the wafer or workpiece may be thinned by grinding and etching; the etching process comprises wet etching; the progress of the grinding is managed by a thickness closed-loop control module, device/system; the thickness closed loop control detects real-time thickness values of the wafer or workpiece 100 for feedback to the closed loop control module, device/system.

Further, detecting the thickness of the wafer or the workpiece 100, and making the error between the thickness of the wafer or the workpiece 100 and the target value smaller than a preset value; wherein the thickness of the wafer or workpiece 100 is obtained using non-contact measurement.

Further, the thickness of the thinned target workpiece 999 or the workpiece before and after etching is measured; calculating the etching rate in real time; the thickness of the wafer or workpiece 100 to be processed is measured, the processing time of wet etching is adjusted by taking the real-time etching rate as a parameter, and the fluctuation of the thickness of the wafer or workpiece 100 is compensated.

Wherein, before removing the first adhesive film or the protective film 300, the thickness of the wafer or the workpiece 100 can be reduced by adopting a Taiko ultra-thin grinding process.

The thinning control apparatus of fig. 17 includes a film flattening unit 111, a thickness detection unit 222, and a thinning processing unit 333; wherein, the thinning processing unit 333 includes a grinding unit 331 and an etching unit 332.

The film flattening unit 111 polishes or flattens the first adhesive film or protective film fourth end face 304 to obtain a first adhesive film or protective film sixth end face 306.

The thickness detection unit 222 measures the thickness of the thinned target workpiece 999 or the workpiece before and after etching; calculating the etching rate in real time; the thickness of the wafer or workpiece 100 to be processed is measured, the processing time of wet etching is adjusted by taking the real-time etching rate as a parameter, and the fluctuation of the thickness of the wafer or workpiece 100 is compensated.

The thinning unit 333 fixes the sixth end surface 306 of the first film or protective film on the carrier table or working table 400; exposing the first end surface 101 of the wafer or workpiece to the working surface of the polishing apparatus 510, 520.

Wherein, the grinding unit 331 and/or the etching unit 332 grinds, etches or reduces the first end face 101 of the wafer or the workpiece to thin the wafer or the workpiece 100 to obtain the target thinned workpiece 999.

As shown in fig. 1-7 and 17, before the film planarization unit 111 is operated, a wafer or workpiece 100 to be thinned is prepared; wherein the wafer or workpiece 100 has completed the patterning process of the previous process; the patterning process structures a feature pattern or functional layer 200 on the wafer or workpiece 100.

The first end surface 201 of the feature or functional layer 200 is connected to the second end surface 102 of the wafer or workpiece 100; and laying a first end surface 301 of a first adhesive or protective film 300 over the second end surface 202 of the feature pattern or functional layer 200; the first film or protective film second end face 302 follows the feature pattern or the surface layer morphology change of the functional layer 200 to form a first film or protective film fourth end face 304.

In addition, a second film or protective film laying step, a process frame mounting step, an Taizhou ring cutting step and an Taizhou ring removing step can be further included in the related process; wherein, after the second adhesive film or the protective film is laid, the cutting of the Taizhou ring and the removal of the Taizhou ring can be carried out; the Taibo ring comes from the Taibo ultra-thin grinding process of the previous process.

It should be noted that the above examples are only for clearly illustrating the technical solutions of the present invention, and those skilled in the art will understand that the embodiments of the present invention are not limited to the above contents, and obvious changes, substitutions or replacements can be made based on the above contents without departing from the scope covered by the technical solutions of the present invention; other embodiments will fall within the scope of the invention without departing from the inventive concept.

Claims (19)

1. A method of reducing the thickness of a workpiece, comprising:

preparing a wafer or workpiece (100) to be thinned; wherein the wafer or workpiece (100) has completed a patterning process of a previous process; the patterning process constructs a feature pattern or functional layer (200) on the wafer or workpiece (100); the first end face (201) of the characteristic pattern or the functional layer (200) is connected with the second end face (102) of the wafer or the workpiece (100);

laying a first end face (301) of a first adhesive or protective film (300) on a second end face (202) of the feature pattern or functional layer (200); the second end face (302) of the first pasting film or the protective film follows the shape change of the surface layer of the feature pattern or the functional layer (200) to form a fourth end face (304) of the first pasting film or the protective film;

polishing or flattening the fourth end face (304) of the first pasting film or the protective film to obtain a sixth end face (306) of the first pasting film or the protective film;

fixing the sixth end face (306) of the first adhesive film or the protective film on a bearing table or a workbench (400); exposing the first end face (101) of the wafer or workpiece to the working face of a polishing apparatus (510, 520);

and grinding, etching or reducing the first end face (101) of the wafer or the workpiece to thin the wafer or the workpiece (100) to obtain a thinned target workpiece (999).

2. The method of claim 1, wherein:

the feature pattern or the functional layer (200) does not change morphology, step distribution and/or thickness before and after thinning treatment;

the end face of the thinning target workpiece (999) comprises a third end face (103) of the wafer or workpiece obtained after thinning processing of the first end face (101) of the wafer or workpiece.

3. The method of claim 1, wherein:

the feature pattern or functional layer (200) is non-uniform in thickness and/or comprises a step-like surface topography.

4. The method of claim 1, wherein:

the total thickness of the thinning target workpiece (999) is between 50 and 100 um.

5. The method of any of claims 1-4, further comprising:

-a step of detecting the thickness of the wafer or workpiece (100); performing closed-loop control of the thickness by detecting a difference between the thickness of the wafer or workpiece (100) and a target thickness value; control of the grinding depth and/or grinding duration is obtained.

6. The method of claim 5, wherein:

the measurement of the thickness of the wafer or workpiece (100) is done using a non-contact device.

7. The method of claim 5, wherein:

the workpiece is made of a semiconductor material.

8. The method of claim 7, wherein:

the semiconductor material comprises Si, SiC and GaN.

9. The method of claim 6 or 7, further comprising:

grinding and etching the first end face (101) of the wafer or workpiece to reduce the thickness of the wafer or workpiece;

the etching comprises wet etching;

the progress of the grinding is managed by a thickness closed-loop control module, device/system; the thickness closed-loop control detects real-time thickness values of the wafer or workpiece (100) for feedback to the closed-loop control module, device/system.

10. The method of claim 8, further comprising:

detecting the thickness of the wafer or the workpiece (100), and enabling the error between the thickness of the wafer or the workpiece (100) and the target value to be smaller than a preset value.

11. The method of claim 9, wherein:

the thickness of the wafer or workpiece (100) is obtained using non-contact measurement.

12. The method of claim 9 or 10, further comprising:

measuring the thickness of the thinning target workpiece (999) or the workpiece before and after the etching; calculating the etching rate in real time;

and measuring the thickness of the wafer or the workpiece (100) to be processed, and adjusting the processing time of the wet etching by taking the real-time etching rate as a parameter to compensate the fluctuation of the thickness of the wafer or the workpiece (100).

13. The method of claim 12, wherein:

before removing the first film or the protective film (300), thinning the thickness of the wafer or the workpiece (100) by adopting a Taiko ultra-thin grinding process.

14. A computer storage medium, comprising:

a storage medium body for storing a computer program;

the computer program, when executed by a microprocessor, implements the method of any of claims 1-13.

15. A thinning control apparatus comprising:

a film flattening unit (111), a thickness detection unit (222), and a thinning processing unit (333);

wherein the thinning processing unit (333) comprises a grinding unit (331) and an etching unit (332);

the film flattening unit (111) polishes or flattens the fourth end face (304) of the first attached film or the protective film to obtain a sixth end face (306) of the first attached film or the protective film;

the thickness detection unit (222) measures the thickness of the thinning target workpiece (999) or the thickness of the workpiece before and after the etching; calculating the etching rate in real time; measuring the thickness of the wafer or the workpiece (100) to be processed, and adjusting the processing time of the wet etching by taking the real-time etching rate as a parameter to compensate the fluctuation of the thickness of the wafer or the workpiece (100);

the thinning processing unit (333) fixes the sixth end surface (306) of the first sticking film or the protective film on the bearing table or the workbench (400); exposing the first end face (101) of the wafer or workpiece to the working face of a polishing apparatus (510, 520);

the grinding unit (331) and/or the etching unit (332) grind, etch or reduce the first end face (101) of the wafer or the workpiece to thin the wafer or the workpiece (100) to obtain a thinned target workpiece (999).

16. The apparatus of claim 14, wherein:

before the operation of the film flattening unit (111), a wafer or a workpiece (100) to be thinned is prepared; wherein the wafer or workpiece (100) has completed a patterning process of a previous process; the patterning process constructs a feature pattern or functional layer (200) on the wafer or workpiece (100);

the first end face (201) of the characteristic pattern or the functional layer (200) is connected with the second end face (102) of the wafer or the workpiece (100); laying a first end face (301) of a first sticking film or a protective film (300) on a second end face (202) of the characteristic pattern or the functional layer (200); the second end face (302) of the first pasting film or the protective film follows the shape change of the surface layer of the feature pattern or the functional layer (200) to form a fourth end face (304) of the first pasting film or the protective film;

the apparatus further comprises the computer storage medium of claim 14.

17. A power device, wherein:

the thinning of the device substrate is achieved with any of the methods as claimed in claims 1-13 and/or the device substrate is prepared with the apparatus as claimed in claim 14 or 15.

18. The device of claim 15, wherein:

the processing process of the device substrate further comprises an ion implantation step, an annealing step and a back metal processing step;

the power device includes an IGBT.

19. The device of claim 16, wherein:

the method further comprises a second film or protective film laying step, a process frame mounting step, a Taizhou ring cutting step and a Taizhou ring removing step;

after the second film or the protective film is laid, the Taizhou ring can be cut and removed;

the Taibo ring comes from the Taibo ultra-thin grinding process of the previous process.

Images