CN114360987B - Coplanar double-V-shaped line slow wave structure suitable for backward wave tube - Google Patents
Coplanar double-V-shaped line slow wave structure suitable for backward wave tube Download PDFInfo
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- CN114360987B CN114360987B CN202210012646.6A CN202210012646A CN114360987B CN 114360987 B CN114360987 B CN 114360987B CN 202210012646 A CN202210012646 A CN 202210012646A CN 114360987 B CN114360987 B CN 114360987B
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Abstract
The invention discloses a coplanar double-V-shaped line slow wave structure suitable for a return wave tube, wherein when an electron beam is injected into the slow wave structure through an electron injection input port, the electron beam excites an electrified magnetic field in the slow wave structure, the electric field is distributed between two metal wires, and the direction of the electric field is that one metal wire points to the other metal wire; because the distance between the two V-shaped metal wires is not completely uniform, the electric field is mainly distributed at the position where the two V-shaped metal wires are close to each other, namely the position below the electron beam channel and the direction of the electric field are longitudinal, so that the beam interaction is enhanced, and finally, the electromagnetic wave with the frequency range of 42.6GHz to 79.2GHz is output at the output port by changing the voltage of the electron beam.
Description
Technical Field
The invention belongs to the technical field of return wave tubes, and particularly relates to a coplanar double-V-shaped line slow wave structure suitable for a return wave tube.
Background
The backward wave tube is an important vacuum electronic device, generates and amplifies electromagnetic waves by enabling backward waves and electrons to interact through a slow wave structure, and has the characteristics of no need of an excitation source, adjustable frequency, small size and the like. The slow wave structure is the core part of the device and determines the performance of the device.
Most of the existing return wave tubes are based on a zigzag waveguide and a staggered dual-gate slow wave structure, and meanwhile, the return wave tubes are also based on a sine waveguide slow wave structure. For a return wave tube composed of a wire slow wave structure. The single-V-shaped line and the non-coplanar double-V-shaped line slow wave structure are shown in fig. 1 and fig. 2, wherein in fig. 1, 1 is a metal line, 2 is a dielectric rod, 3 is a vacuum part, in fig. 2, 1 is a metal line, 2 is a dielectric rod, and 3 is a vacuum part. When the single-wire slow-wave structure works, the electric field is mainly distributed on the metal wire 1, and when the non-coplanar double-wire slow-wave structure works, the electric field distribution is influenced but is mainly concentrated on the single metal wire respectively. The coupled impedance of the single-wire structure and the non-coplanar double-wire structure is small, and the oscillation starting is difficult.
In addition, the metal wire slow wave structure has the characteristics of easiness in processing and low working voltage, the research on the metal wire slow wave structure is mainly the application of a traveling wave tube, and the research on a slow wave structure backward wave tube formed by a metal wire is less.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a coplanar double-V-shaped line slow wave structure suitable for a return wave tube, wherein a planar metal wire is better applied to the return wave tube, and the return wave tube with wide tunable frequency, easy processing and small structure can be obtained.
In order to achieve the above object, the present invention provides a coplanar double V-shaped line slow wave structure suitable for a return wave tube, comprising: the metal wire comprises a coplanar double-V-shaped metal wire, three medium supporting rods and a rectangular metal shell;
the coplanar double-V-shaped metal wire is formed by cascading a plurality of coplanar double-V-shaped metal wire sections, wherein each coplanar double-V-shaped metal wire section is obtained by horizontally translating one V-shaped metal wire section, after the translation is finished, the distance between the two V-shaped metal wire sections at the corners of the bottom end is d, the distance between the opening of the top end of each V-shaped metal wire section is p, and the distance between the bottom end of each V-shaped metal wire section and the top end of each V-shaped metal wire section is h; the corners of all the metal line segments are connected by fan-shaped columns, when all the metal line segments are connected, a periodic double-V-shaped metal slow wave line is formed, and an electron beam channel is formed right above the overlapped part of the two V-shaped metal lines;
the medium supporting rods take the center position of a coplanar double-V-shaped-line slow wave structure as a reference, three medium supporting rods are uniformly distributed below two V-shaped metal lines and fixed on the metal shell, and the distance between any two medium supporting rods is b, so that the two metal lines are positioned on the same plane;
the rectangular metal shell is used as a shielding device of a coplanar double-V-shaped line slow wave structure and is used for shielding external electromagnetic interference, a rectangular hollow is respectively arranged on the left side surface and the right side surface of the metal shell and is used as an input port and an output port of an electron beam, and a rectangular hollow is respectively arranged on the left side surface and the right side surface of the lower bottom surface and is used as an output port of electromagnetic waves;
when the backward wave tube runs, an electron beam is injected into the slow wave structure through the electron injection input port, the electron beam excites an electromagnetic field in the slow wave structure, the electric field is distributed between two metal wires, and the direction is that one metal wire points to the other metal wire; because the distance between the two V-shaped metal wires is not completely uniform, the electric field is mainly distributed at the position where the two V-shaped metal wires are close to each other, namely the position below the electron beam channel and the direction of the electric field are longitudinal, so that the beam interaction is enhanced, and finally, the electromagnetic wave with the frequency range of 42.6GHz to 79.2GHz is output at the output port by changing the voltage of the electron beam.
Meanwhile, the coplanar double-V-shaped line slow wave structure suitable for the return wave tube has the following beneficial effects:
(1) Compared with the existing structure that the two metal wires are not in the same plane, although the electric fields on the two metal wires are mutually influenced, the electric fields are mainly concentrated on one metal wire respectively; the two metal wires are positioned on the same plane, so that an electric field is mainly concentrated between the two metal wires, and the distance between the two metal wires is not completely uniform due to the structural characteristics of the two metal wires, so that the electric field is mainly distributed at the position where the two metal wires are close to each other, the electric field is more concentrated, high coupling impedance can be provided, and the beam interaction is more sufficient; meanwhile, the back wave oscillation is easier to generate, the average coupling impedance of three slow wave structures of a single line, a non-coplanar double line and a coplanar double line is researched, and the coplanar double V-shaped line structure has the highest coupling impedance when the frequency is above 40GHz as can be seen from fig. 8; PIC simulation is carried out on the return wave tubes based on the three structures, and the result shows that when the simulation conditions are the same, namely the number of cycles of the slow wave structure is the same, and the voltage current and the current density of the electron beam are the same, the return wave tubes of the single V-shaped line and the non-coplanar double V-shaped line structure cannot excite the start-up return wave oscillation.
(2) The research on the backward wave tube is mainly in the W wave band and the G wave band, even higher frequency, the research on the backward wave tube from the Q wave band to the E wave band is less, and the slow wave structure can realize the frequency tuning from the Q wave band to the E wave band by combining the good transmission characteristic and the dispersion characteristic of the slow wave structure described by the invention.
(3) The invention adopts a slow wave structure of coplanar double V-shaped metal wires, electron beams pass through the upper part of the mutual superposition part of the two V-shaped metal wires, and a medium rod is used for supporting the lower part of the two V-shaped metal wires, thereby being beneficial to avoiding charge accumulation.
Drawings
FIG. 1 is a schematic diagram of a single V-shaped line slow wave structure;
FIG. 2 is a schematic diagram of a non-coplanar double V-shaped line configuration;
FIG. 3 is a schematic diagram of a single cycle of a coplanar double-vee line slow wave structure;
FIG. 4 is a schematic diagram of an embodiment of a coplanar double-V-shaped line slow wave structure for a return wave tube according to the present invention;
FIG. 5 is a schematic diagram of a double V-shaped metal slow wave line;
FIG. 6 is a schematic diagram of the distribution of the electric field in the working mode of the coplanar double-V-shaped line slow-wave structure;
FIG. 7 is a graph of average coupled impedance versus three slow wave structures;
FIG. 8 is a graph of single period dispersion simulation results for a coplanar double-chevron line slow-wave structure;
FIG. 9 is a diagram showing simulation results of transmission characteristics of a coplanar double-V-shaped line slow-wave structure;
FIG. 10 is a graph of the output signal of the coplanar double V-shaped line slow wave structure at an electron beam voltage of 9 kV;
FIG. 11 is a graph of the output signal spectrum of a coplanar double-chevron line slow wave structure;
FIG. 12 is a graph of output power and output frequency of a coplanar double-V-shaped line slow wave structure as a function of electron beam voltage;
Detailed Description
The following description of the embodiments of the present invention is provided in order to better understand the present invention for those skilled in the art with reference to the accompanying drawings. It is to be expressly noted that in the following description, a detailed description of known functions and designs will be omitted when it may obscure the main content of the present invention.
Examples
FIG. 4 is a schematic diagram of an embodiment of a coplanar double-V-shaped line slow-wave structure suitable for a return-wave tube according to the present invention.
In this embodiment, as shown in fig. 3, a coplanar double V-shaped line slow wave structure suitable for a backward wave tube of the present invention includes: the device comprises a coplanar double-V-shaped metal wire 1, three medium supporting rods 3 and a rectangular metal shell 2;
the coplanar double-V-shaped metal wire 1 is formed by cascading a plurality of coplanar double-V-shaped metal wire segments, wherein, as shown in fig. 3, each coplanar double-V-shaped metal wire segment is obtained by horizontally translating one V-shaped metal wire segment, after the translation is completed, the distance between the two V-shaped metal wire segments at the corners of the bottom ends is d =0.45mm, the distance between the opening at the top end of each V-shaped metal wire segment is p =0.44mm, and the distance between the bottom end and the top end of each V-shaped metal wire segment is h =0.85mm; the corners of all metal line segments are connected by fan-shaped columns, as shown in fig. 5, when all metal line segments are connected, a periodic double-V-shaped metal slow wave line is formed, and an electron beam channel 4 is formed right above the overlapped part of the two V-shaped metal lines; in this embodiment, the double V-shaped metal slow wave line has a total length of 24 full cycles of 10.56mm.
The medium support rods 3 take the center position of a coplanar double-V-shaped line slow wave structure as a reference, the three medium support rods are uniformly distributed below the two V-shaped metal lines and fixed on the metal shell, the distance between any two medium support rods is b =0.3mm, the thickness of each medium support rod is 0.1mm, and the two metal lines are positioned on the same plane;
as shown in fig. 4, the rectangular metal shell 2 is provided with a rectangular cavity 3 and a rectangular cavity 4 on the left and right side surfaces of the metal shell respectively, as an input port and an output port of an electron beam, and a rectangular cavity on the left and right sides of the lower bottom surface respectively, as output ports 1 and 2 of electromagnetic waves;
when the backward wave tube runs, an electron beam is injected into the slow wave structure through the electron injection input port, the electron beam excites an electromagnetic field in the slow wave structure, the electric field is distributed between two metal wires, and the direction is that one metal wire points to the other metal wire; because the distance between the two V-shaped metal wires is not completely uniform, the electric field is mainly distributed at the position where the two V-shaped metal wires are close to each other, namely, below the electron beam channel and the direction of the electric field is longitudinal, as shown in fig. 6, so that the beam interaction is enhanced, and finally, the electromagnetic wave with the frequency range of 42.6GHz to 79.2GHz is output at the output port by changing the voltage of the electron beam.
Next, simulation studies are performed on the coupling impedance of the single-wire structure, the non-coplanar double-wire structure and the coplanar double-V-shaped-wire slow-wave structure according to the present invention, and the simulation result is shown in fig. 7, which shows that the coplanar double-V-shaped-wire slow-wave structure according to the present invention has the highest coupling impedance when the frequency is above 40GHz compared with the single-wire structure and the non-coplanar double-wire structure.
As shown in fig. 8, this embodiment shows dispersion curves of two modes of the coplanar double-V slow-wave structure according to the present invention, the working mode is a fundamental mode, and it can be seen from fig. 8 that the frequency range related to the backward wave state of the backward wave tube of the slow-wave structure constructed according to the present invention is very wide. The transmission characteristic simulation result is shown in FIG. 9, in which the solid line is S 11 The dotted line represents S 21 It can be seen from the figure that the present invention has good transmission characteristics over a wide frequency range, i.e. the low frequency part S from the Q-band to the E-band 11 Are all lower than-15 dB, and S 21 Close to zero. FIG. 10 is a graph showing the output signals of port 1 and port 2 when the working voltage of the slow-wave structure backward wave tube of the present invention is 9kV, wherein the dotted line represents the output signal of port 2, and the solid line representsShowing the output signal of port 1, it can be seen that within 50ns of simulation time, the output signal is stable, no obvious oscillation signal is observed, and the amplitude of the signal output from port 2 is much smaller than that of the signal output from port 1. In order to more clearly show the magnitude of the output signal of port 2, i.e. the reflected signal, the signal of port 2 in the right diagram has been amplified and is shown in the left diagram. Fig. 11 shows a spectrum diagram of an output signal, in which a dotted line represents a result of converting the output signal of the port 2, and a solid line represents a result of converting the signal of the port 1. It can be seen from the figure that the output signal is spectrally clean, substantially free of other frequencies, and has very small higher harmonic amplitudes. Fig. 12 shows the output power and output frequency as a function of electron beam voltage, in which the dashed line represents the output peak power, and the solid line represents the frequency variation, and it can be seen from the graph that the tuning range is 42.6GHz to 79.2GHz, and the output peak power can reach 53.6W.
Although illustrative embodiments of the present invention have been described above to facilitate the understanding of the present invention by those skilled in the art, it should be understood that the present invention is not limited to the scope of the embodiments, and various changes may be made apparent to those skilled in the art as long as they are within the spirit and scope of the present invention as defined and defined by the appended claims, and all matters of the invention which utilize the inventive concepts are protected.
Claims (1)
1. A coplanar double-V-shaped line slow wave structure suitable for a return wave tube is characterized by comprising: the metal wire comprises a coplanar double-V-shaped metal wire, three medium supporting rods and a rectangular metal shell;
the coplanar double-V-shaped metal wire is formed by cascading a plurality of coplanar double-V-shaped metal wire sections, wherein each coplanar double-V-shaped metal wire section is obtained by horizontally translating one V-shaped metal wire section, after the translation is finished, the distance between the two V-shaped metal wire sections at the corners of the bottom end is d, the distance between the opening of the top end of each V-shaped metal wire section is p, and the distance between the bottom end of each V-shaped metal wire section and the top end of each V-shaped metal wire section is h; the corners of all the metal line segments are connected by fan-shaped columns, when all the metal line segments are connected, a periodic double-V-shaped metal slow wave line is formed, and an electron beam channel is formed right above the overlapped part of the two V-shaped metal lines;
the medium supporting rod takes the center position of a coplanar double-V-shaped line slow wave structure as a reference, three medium supporting rods are uniformly distributed below two V-shaped metal lines and fixed on the metal shell, and the distance between any two medium supporting rods is b, so that the two metal lines are positioned on the same plane;
the rectangular metal shell is used as a shielding device of a coplanar double-V-shaped line slow wave structure and is used for shielding external electromagnetic interference, a rectangular hollow is respectively arranged on the left side surface and the right side surface of the metal shell and is used as an input port and an output port of an electron beam, and a rectangular hollow is respectively arranged on the left side surface and the right side surface of the lower bottom surface and is used as an output port of electromagnetic waves;
when the backward wave tube runs, an electron beam is injected into the slow wave structure through the electron injection input port, the electron beam excites an electromagnetic field in the slow wave structure, the electric field is distributed between two metal wires, and the direction is that one metal wire points to the other metal wire; because the distance between the two V-shaped metal wires is not completely uniform, the electric field is mainly distributed at the position where the two V-shaped metal wires are close to each other, namely below the electron beam channel, and the direction of the electric field is longitudinal, so that the beam interaction is enhanced, and finally, the electromagnetic wave with the frequency range of 42.6GHz to 79.2GHz is output at the output port by changing the voltage of the electron beam.
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