CN114350363B - Preparation method of quantum dot-nanoparticle composite film and composite film - Google Patents
Preparation method of quantum dot-nanoparticle composite film and composite film Download PDFInfo
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Abstract
The application discloses a preparation method of a quantum dot-nanoparticle composite film and the composite film. The preparation method of the quantum dot-nanoparticle composite film comprises the following steps: filling a deposition liquid between the upper substrate and the lower substrate, wherein the deposition liquid comprises quantum dots and nano particles; and applying voltage to the upper substrate and the lower substrate, so that the nano particles and the quantum dots in the deposition liquid are electrodeposited in an electric field to form a quantum dot-nano particle composite film. The preparation method can regulate the distribution state of the nano particles and the quantum dots in the composite film by dynamically regulating the direction, the size, the frequency, the time of applying the electric field and the like of the electrodeposited electric field.
Description
Technical Field
The application relates to the technical field of display, in particular to a preparation method of a quantum dot-nanoparticle composite film and the composite film.
Background
Quantum Dots (QDs) are nanoscale semiconductor materials with quantum fluorescence effects; fluorescent light of different colors can be emitted under excitation of electricity or light. The color gamut of the quantum dot display technology can reach 110% of NTSC, so the quantum dot material can endow the display with a wider color gamut, and the terminal display has more beautiful color expression.
The existing quantum dot color film processing method mainly comprises a photoetching method and an ink-jet printing method, and the problems of low luminous efficiency, poor stability, poor repeatability, long processing time and the like are respectively faced. Meanwhile, in order to improve the light efficiency of the color film, nanoparticles are usually required to be added, but the nanoparticles cannot be well regulated and controlled by adopting a photoetching method and an ink-jet printing method; if the quantum dot color film with a special structure needs to be prepared, the quantum dot color film needs to be printed step by step, so that the preparation efficiency is slowed down.
Therefore, it is needed to provide a preparation method for obtaining the quantum dot-nanoparticle composite film capable of regulating and controlling the nanoparticles.
Disclosure of Invention
The invention aims to provide a preparation method of a quantum dot-nanoparticle composite film, which can regulate and control the distribution state of nanoparticles and quantum dots in the composite film.
The application provides a preparation method of a quantum dot-nanoparticle composite film, which comprises the following steps:
a deposition area is arranged between the upper substrate and the lower substrate, deposition liquid is filled into the deposition area, and the deposition liquid comprises quantum dots and nano particles;
providing an electric field for a deposition area, so that the nano particles and the quantum dots in the deposition liquid are electrodeposited in the electric field to form a quantum dot-nano particle composite film.
Optionally, in some embodiments of the present application, the relative movement of the nanoparticle and the quantum dot in the electric field during electrodeposition is regulated by dynamically adjusting the strength and direction of the electric field.
Optionally, in some embodiments of the present application, the nanoparticle has a particle size greater than the quantum dot and the nanoparticle has a surface charge less than the quantum dot.
Optionally, in some embodiments of the present application, the upper substrate is connected to a positive electrode of a power supply, the lower substrate is connected to a negative electrode of the power supply, and a low electric field is continuously provided to a region where the deposition liquid is located to perform electrodeposition, so that the nanoparticles are deposited on the upper surface of the composite film, and finally, the quantum dot-nanoparticle composite film is formed on the lower substrate.
Optionally, in some embodiments of the present application, the upper substrate is connected to a positive power supply electrode, and the lower substrate is connected to a negative power supply electrode, so that the deposition liquid is electrodeposited in a low electric field intensity; and in the process of continuously providing low electric field intensity for the area where the deposition liquid is located, high voltage is instantaneously applied to provide electric field intensity, so that the nano particles and the quantum dots are co-deposited, and finally the quantum dot-nano particle composite film is formed on the lower substrate.
Optionally, in some embodiments of the present application, the upper substrate is connected to a positive power supply electrode, and the lower substrate is connected to a negative power supply electrode, so that the deposition liquid is electrodeposited in a low electric field intensity; and in the process of continuously providing low electric field intensity for the area where the deposition liquid is located, a high voltage is instantaneously applied to provide a high electric field, a reverse voltage is instantaneously applied to provide a reverse electric field, so that the nano particles are deposited on the lower surface of the composite film, and finally the quantum dot-nano particle composite film is formed on the lower substrate.
Optionally, in some embodiments of the present application, the electric field strength during the electrodeposition is 5×10 5 ～8*10 7 V/m. The electrodeposition time is 1-3600 s.
Optionally, in some embodiments of the present application, the low electric field has a strength of 5×10 5 V/m～5*10 7 V/m。
Optionally, in some embodiments of the present application, the high electric field has a strength of 1×10 6 V/m～8*10 7 V/m。
Optionally, in some embodiments of the present application, the strength of the reverse electric field is 5×10 5 V/m～5*10 7 V/m。
Alternatively, in some embodiments of the present application, the high electric field is instantaneously applied for a period of time ranging from 0.1 μs to 10 s/time.
Alternatively, in some embodiments of the present application, in the method for preparing a quantum dot-nanoparticle composite film, the total duration of the application of the high electric field is 0.1 μs to 600s.
Alternatively, in some embodiments of the present application, the reverse electric field is applied for a period of time ranging from 0.1 μs to 10 s/time.
Alternatively, in some embodiments of the present application, in the method for preparing a quantum dot-nanoparticle composite film, the total duration of the application of the reverse electric field is 0.1 μs to 600s.
Optionally, in some embodiments of the present application, the number of applications of the high electric field and the reverse electric field is greater than 1, respectively.
Optionally, in some embodiments of the present application, a mass ratio of the nanoparticles to the quantum dots in the deposition liquid is between 1 and 500:50.
optionally, in some embodiments of the present application, the concentration of the quantum dots and the nanoparticles in the deposition liquid is 1-400 mg/mL.
Alternatively, in some embodiments of the present application, the quantum dots have a diameter of 2 to 150nm.
Alternatively, in some embodiments of the present application, the nanoparticle has a diameter of 10 to 500 μm.
Optionally, in some embodiments of the present application, the Quantum Dots (QDs) include one or more elements from group IV, group II-VI, group IV-VI, or group III-V.
Alternatively, in some embodiments of the present application, the nanoparticle is selected from the group consisting of silicon oxide (SiO 2 ) One or more of titanium oxide, zirconium oxide, tungsten oxide, and barium titanate.
Optionally, in some embodiments of the present application, the solvent in the deposition liquid comprises one or more of alcohol ether acetates, alcohols, water, ethers, esters, alkanes.
Correspondingly, the application also provides a quantum dot-nanoparticle composite film which is prepared by adopting the preparation method.
The beneficial effects of this application lie in:
according to the preparation method of the quantum dot-nanoparticle composite film, the deposition distribution state of the nanoparticles and the quantum dots in an electric field can be regulated and controlled by changing the condition of the applied voltage. Specifically, in the embodiment of the application, the motion state of the nano particles relative to the quantum dots can be adjusted through the direction, the size, the frequency and the time of applying the electric field, which are dynamically adjusted in the process of preparing the quantum dot-nano particle composite film through electrodeposition, so that different distribution states of the nano particles in the quantum dot film are realized, and different photoelectric characteristics and better patterning regularity are provided for the quantum dot-nano particles.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an embodiment of the present application prior to electrodeposition;
FIG. 2 is a schematic illustration of electrodeposition of quantum dot-nanoparticle composite films provided in embodiments of the present application;
FIG. 3 is a schematic illustration of the preparation of quantum dot-nanoparticle composite films in electrodeposition provided in example 1 of the present application;
FIG. 4 is a schematic illustration of the preparation of quantum dot-nanoparticle composite films in electrodeposition provided in example 2 of the present application;
fig. 5 is a schematic illustration of the preparation of quantum dot-nanoparticle composite films in electrodeposition provided in example 3 of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application. Furthermore, it should be understood that the detailed description is presented herein for purposes of illustration and explanation only and is not intended to limit the present application. In this application, unless otherwise indicated, terms of orientation such as "upper" and "lower" are used to generally refer to the upper and lower positions of the device in actual use or operation, and in particular the orientation of the drawing figures.
In the research and practice of the prior art, the inventors of the present application found that, in order to reduce self-absorption in a quantum dot membrane, nanoparticles are often added to Quantum Dots (QDs) to improve self-absorption, but for photolithography and conventional printing methods, the distribution state of the nanoparticles in the quantum dot membrane cannot be well regulated.
The inventor of the application also finds that in the process of modifying the quantum dot by using the nanoparticle, the nanoparticle is often larger than the particle size of the quantum dot particle, and the charge quantity is not easy to be the same, so that the motion states of the quantum dot particle are different, and the relative motion states of the particle are controlled by applying different electric field intensities, so that the distribution state of the nanoparticle is regulated. QDs are smaller and require longer time to fully deposit.
Therefore, the inventor proposes a method for preparing a quantum dot film by using electrophoretic deposition, which is a method for preparing a quantum dot film by using charged quantum dot materials to move in a specific direction under the action of an electric field and selectively deposit at a specific electrode. Because the electric field force is applied in the process of forming the quantum dot film, the nano particles in the quantum dot film can be adjusted and prepared, so that the distribution state of the nano particles in the quantum dot film is controlled, and the light efficiency is improved or the blue light transmission is reduced. Meanwhile, the method has the characteristics of convenience and rapidness, and can prepare the quantum dot film in a large area. In the quantum dot-nanoparticle composite material used for preparing the quantum dot film by electrophoretic deposition, the charge amount of the nanoparticles is generally different from that of the quantum dots, so that the dynamic regulation of the distribution state of the nanoparticles is possible.
The embodiment of the application provides a preparation method of a quantum dot-nanoparticle composite film and the composite film. The following will describe in detail. The following description of the embodiments is not intended to limit the preferred embodiments.
Referring to fig. 1 and fig. 2 in combination, an embodiment of the present application provides a method for preparing a quantum dot-nanoparticle composite film, including: a deposition area is provided between the upper substrate 120 and the lower substrate 110, and a deposition liquid 200 'is filled between the upper substrate 120 and the lower substrate 110 (i.e., the deposition area), and the deposition liquid 200' includes quantum dots and nanoparticles 201; an electric field is provided to the deposition area such that the nanoparticles 201 and the quantum dots in the deposition liquid 200' are electrodeposited in the electric field to form a quantum dot-nanoparticle composite film 200. It is conceivable that in fig. 1 and 2, the upper substrate 120 and the lower substrate 110 are disposed opposite to each other, and the upper substrate 120 is located above the lower substrate 110. Further, the deposition liquid may be poured into the deposition area between the upper substrate 120 and the lower substrate 110 by a siphon, printing, coating, or the like.
Further, a voltage may be applied to the upper substrate 120 and the lower substrate 110 to provide an electric field to the deposition region. Further, the upper substrate and the lower substrate each include a conductive layer thereon. The upper and lower substrates may be connected to a power source to apply an electric field to a deposition region between the upper and lower substrates. When the depositable liquid is filled between the upper substrate and the lower substrate, particles in the liquid can directionally move to form a film under the action of an electric field force. Further, in the preparation method of the embodiment of the present application, the relative distribution state of the nanoparticles and the quantum dots in the composite film formed by deposition may be adjusted by dynamically adjusting the intensity and the direction of the applied voltage, so as to adjust and control the relative movement of the nanoparticles and the quantum dots in the electric field during the electrodeposition process.
With continued reference to fig. 2, the upper substrate 120 and the lower substrate 110 are connected to the positive and negative electrodes of the power source 300 to provide an electric field environment for the region between the upper substrate and the lower substrate, i.e. the deposition liquid is electrically deposited under the action of the electric field. Further, a plurality of barriers 130 may be disposed between the upper substrate 120 and the lower substrate 110, and a quantum dot-nanoparticle composite film 200 may be formed between adjacent barriers 130 by electrodeposition. Further, the direction of the electric field can be regulated according to the dynamic requirements of deposition. For example, the upper substrate may be connected to a positive electrode, and the lower substrate may be connected to a negative electrode; for another example, the lower substrate may be connected to a positive electrode and the upper substrate may be connected to a negative electrode.
In the embodiment of the application, the deposition liquid is deposited on the lower substrate to form the quantum dot-nanoparticle composite film under the action of gravity. However, in the deposition process, the quantum dots and the nanoparticles in the deposition liquid are charged, so that the deposition speeds of the quantum dots and the nanoparticles are different under the action of an electric field, and the distribution states of the nanoparticles in the finally formed composite film are also different. For example, the relative distribution state of the nano particles and the quantum dots is regulated and controlled by controlling the intensity and the direction of the electric field between the upper substrate and the lower substrate, and finally the quantum dot-nano particle composite film is deposited on the lower substrate.
In the electrodeposition method, the relative sizes of the nano particles and the quantum dots in the quantum dot-nano particle colloid solution are not consistent, and the relative charged amounts are also different. Therefore, in the process of preparing the quantum dot-nanoparticle composite film by utilizing electrodeposition, the relative motion state of the nanoparticles and the quantum dots can be regulated and controlled by increasing the strength of an electric field or changing the direction of the electric field in a short time, so that the quantum dot-nanoparticle composite film with different nanoparticle dispersion states and performances is obtained. Further, the nanoparticles and quantum dots are negatively charged. It is conceivable that, because the nanoparticle and the quantum dot are negatively charged, besides the action of gravity, the nanoparticle and the quantum dot have the action of an electric field, and the two combine to regulate the relative deposition speed of the nanoparticle and the quantum dot, thereby regulating the distribution state of the nanoparticle in the quantum dot-nanoparticle composite film.
In some embodiments, the nanoparticle has a particle size greater than the quantum dot and the nanoparticle has a surface charge less than the quantum dot. Further, connecting the upper substrate and the lower substrate to a power supply provides an electric field to a deposition area between the upper and lower substrates. Further, the distribution state of the nano particles can be regulated by changing the intensity and/or the direction of the electric field, and the following three schemes can be seen in detail.
For example, refer to FIG. 3One of the schemes is as follows: continuously applying low voltage to the area where the deposition liquid is positioned to provide low electric field intensity so as to regulate and control the deposition of the nano particles close to the upper surface of the composite film, and finally depositing and forming the quantum dot-nano particle composite film on the lower substrate; wherein the low voltage specific operation may be: the upper substrate is connected to a positive electrode, the lower substrate is connected to a negative electrode, and a low voltage is applied. Further, the low electric field has a strength of 5×10 5 V/m～5*10 7 V/m. The electrodeposition time, i.e., the entire energization time during the preparation method, may be 1-3600 s.
For example, referring to fig. 4, one of the schemes is: firstly, continuously applying low voltage to the area where the deposition liquid is positioned to provide low electric field intensity; in the process of continuously providing low electric field intensity for the area where the deposition liquid is located, high voltage is instantaneously applied to provide a high electric field environment for the deposition liquid, and the co-deposition of the nano particles and the quantum dots is regulated, namely, the relative movement of the nano particles and the quantum dots in the deposition process is more consistent, a composite film with uniformly distributed nano particles is obtained, and finally, the quantum dot-nano particle composite film is deposited on the lower substrate; wherein the upper substrate is connected with a positive electrode, and the lower substrate is connected with a negative electrode; the electric field direction of the high electric field is the same as that of the low electric field, but the electric field strength of the high electric field is larger than that of the low electric field. Further, the electrodeposition time may be 1 to 3600s. The strength of the low electric field is 5 x 10 5 V/m～5*10 7 V/m; the strength of the high electric field is 1 x 10 6 V/m～8*10 7 V/m. Meanwhile, the high electric field may be applied for a period of 0.1 μs to 10 s/time, for example, 0.1 μs/time, 1 μs/time, 10 μs/time. The total duration of the application of the high electric field is 0.1 mu s-600 s. And the number of times of application of the high electric field is greater than 1.
For example, referring to fig. 5, one approach is to: firstly, the upper substrate is connected with a positive electrode, the lower substrate is connected with a negative electrode, and low electric field intensity is continuously provided for the area where the deposition liquid is located; wherein in the direction of the deposition liquidAnd in the process of continuously providing low electric field intensity in the region, instantaneously applying high voltage to provide high electric field for the deposition liquid, and instantaneously applying reverse voltage to provide reverse electric field for the deposition liquid, so as to regulate the deposition of the nano particles on the lower surface of the composite film. Further, after each transient high electric field, a transient counter-electric field environment is provided next (i.e., the lower substrate is connected to the positive electrode and the upper substrate is connected to the negative electrode). Further, the electrodeposition time may be 1 to 3600s. The strength of the low electric field is 5 x 10 5 V/m～5*10 7 V/m; the strength of the high electric field is 1 x 10 6 V/m～8*10 7 V/m. Meanwhile, the application time length of the high electric field can be 0.1 mu s-10 s/time; the number of times of application of the high electric field is more than 1, and the total duration of application of the high electric field is 0.1 mu s-600 s. The strength of the reverse electric field is 5 x 10 5 V/m～5*10 7 V/m. The reverse electric field is applied for a period of time ranging from 0.1. Mu.s to 10 s/time, and may be, for example, 0.1. Mu.s/time, 1. Mu.s/time, 10. Mu.s/time. The application times of the reverse electric field are more than 1 time, and the total duration of the application of the reverse electric field is 0.1 mu s-600 s.
In some embodiments of the present application, the mass ratio of the nanoparticles to the quantum dots in the deposition liquid is between 1 and 500:50.
the concentration of the quantum dots and the nanoparticles in the deposition liquid may be 1mg/mL, 10mg/mL, 50mg/mL, 80mg/mL, 100mg/mL, 150mg/mL, 200mg/mL, 250mg/mL, 300mg/mL, 350mg/mL, 400mg/mL. Further, the concentration of the quantum dots is between 1 and 300 mg/ml; the concentration of the nano particles is between 1 and 100 mg/ml.
In some embodiments of the present application, the electrodeposited electric field strength is 5 x 10 5 ～8*10 7 V/m; for example, it may be 5 x 10 5 V/m、8*10 5 V/m、1*10 6 V/m、5*10 6 V/m、1*10 7 V/m、3*10 7 V/m、4*10 7 V/m or 8 x 10 7 V/m。
In some embodiments of the present application, the time of electrodeposition, i.e., the overall power-up time, may be 1s, 10s, 50s, 100s, 500s, 1000s, 1500s, 2000s, 2500s, 3000s, 3300s, or 3600s.
In some embodiments of the present application, the low electric field may have a strength of 5×10 5 V/m、8×10 5 V/m、1×10 6 V/m、5×10 6 V/m、1×10 7 V/m、5×10 7 V/m. The high electric field may have a strength of 1 x 10 6 V/m、5*10 6 V/m、1*10 7 V/m、5*10 7 V/m or 8 x 10 7 V/m。
In some embodiments of the present application, the high electric field is in the same direction as the low electric field. Further, the high electric field has an electric field strength greater than the low electric field.
In some embodiments of the present application, the high electric field has the same electric field direction as the low electric field, and the high electric field has a field strength greater than the low electric field; the direction of the reverse electric field is opposite to the high electric field and the low electric field.
In some embodiments of the present application, the time of the multiple high electric fields applied, the electric field strength, may not be equal. Similarly, the time and the electric field strength of the applied reverse electric field may be unequal. Specifically, the amount of charge, the size, and the like of the examples can be determined.
In some embodiments of the present application, the quantum dots have a diameter of 2 to 150nm.
In some embodiments of the present application, the nanoparticle has a diameter of 10 to 500 μm.
In some embodiments of the present application, the Quantum Dots (QDs) include group IV, II-VI, IV-VI, III-V elements. The quantum dot mainly comprises: group IIIA-VA (e.g., inP, gaAs, etc.), group IIB-VIA (e.g., cdSe, znS, cdS, etc.); also include: other high stability composite quantum dots, such as hydrogel loaded quantum dot structures (e.g., cdSe-SiO 2 Etc.), and perovskite quantum dots, etc.
In some embodiments of the present application, the nanoparticle is selected from the group consisting of silicon oxide (SiO 2 ) One or more of titanium oxide, zirconium oxide, tungsten oxide, barium titanate; corresponding to the above nanoparticlesPorous or mesoporous materials.
In some embodiments of the present application, in the electrodeposition process of the deposition liquid, the solvent, the quantum dots and the nanoparticles gradually delaminate, and the quantum dot-nanoparticle composite film with different nanoparticle distribution states is obtained by deposition. Further, the solvent in the deposition liquid comprises one or more of alcohol ether acetates, alcohols, water, ethers, esters, alkanes. For example, the alcohol ether acetate may be Propylene Glycol Methyl Ether Acetate (PGMEA). For example, the alcohol may be ethanol. For example, the ether may be diethyl ether. For example, the ester may be ethyl acetate. The alkane may be n-octane.
The direction of the electric field in the embodiments of the present application is not limited to a vertical electric field, and a horizontal electric field may be used to prepare the electrodeposited film.
The embodiment of the application also provides a quantum dot-nanoparticle composite film which is prepared by adopting the preparation method.
The method can be applied to the QD-LED, the QLED, the QD-CF and other related fields.
The present application has been conducted in succession with a number of tests, and the invention will now be described in further detail with reference to a few test results, as will be described in detail below in connection with specific examples.
Example 1
The embodiment provides a method for preparing a quantum dot-nanoparticle composite film, referring to fig. 3, comprising the following steps:
filling a deposition liquid 200 'between the upper and lower substrates 120 and 110, the deposition liquid 200' including quantum dots and nanoparticles 201;
and connecting the upper substrate 120 with a positive electrode of a power supply, connecting the lower substrate 110 with a negative electrode of the power supply, applying voltage to the upper substrate 120 and the lower substrate 110, continuously providing a low electric field to the area where the deposition liquid 200' is located, performing electrodeposition, and finally depositing to form the quantum dot-nanoparticle composite film 200.
In this embodiment, the particle size of the nanoparticle is larger than that of the quantum dot, and the surface charge of the nanoparticle is smaller than that of the quantum dot. And the nano particles are deposited near the upper surface of the quantum dot-nano particle composite film.
In this embodiment, the electric field strength of the electrodeposition is 5×10 5 V/m. The electrodeposition time was 1000s.
Example 2
The embodiment provides a method for preparing a quantum dot-nanoparticle composite film, referring to fig. 4, comprising the following steps:
filling a deposition liquid 200 'between the upper and lower substrates 120 and 110, the deposition liquid 200' including quantum dots and nanoparticles 201;
connecting the upper substrate 120 to a positive electrode of a power source, and connecting the lower substrate 110 to a negative electrode of the power source, so that the deposition liquid 200' is electrodeposited in a low electric field; in the process of continuously providing a low electric field to the area where the deposition liquid 200' is located, a high voltage is instantaneously applied to provide a high electric field, so as to regulate and control the co-deposition of the nanoparticles and the quantum dots, and finally, the quantum dot-nanoparticle composite film 200 is formed by deposition.
In this embodiment, the particle size of the nanoparticle is larger than that of the quantum dot, and the surface charge of the nanoparticle is smaller than that of the quantum dot. In addition, in the quantum dot-nanoparticle composite film of the present embodiment, the nanoparticle and the quantum dot are uniformly distributed.
In this embodiment, the overall time of electrodeposition is 3600s. The low electric field strength is 5 x 10 5 . The high electric field strength is 4 x 10 7 V/m. The high electric field is applied for 10 s/time and the application times are 3 times.
Example 3
The embodiment provides a preparation method of a quantum dot-nanoparticle composite film, please refer to fig. 5, comprising the following steps:
filling a deposition liquid 200 'between the upper and lower substrates 120 and 110, the deposition liquid 200' including quantum dots and nanoparticles 201;
connecting the upper substrate 120 to a positive electrode of a power source, and connecting the lower substrate 110 to a negative electrode of the power source, so that the deposition liquid 200' is electrodeposited in a low electric field; wherein the process of continuously providing a low electric field to the region where the deposition liquid 200' is located includes: a high voltage is instantaneously applied to provide a high electric field, and a reverse voltage is instantaneously applied to provide a reverse electric field, and finally the quantum dot-nanoparticle composite film 200 is deposited.
In this embodiment, the particle size of the nanoparticle is larger than that of the quantum dot, and the surface charge of the nanoparticle is smaller than that of the quantum dot. And the nano particles in the quantum dot-nano particle composite film are deposited close to the lower surface of the composite film.
In this embodiment, the overall time of electrodeposition is 3600s. The strength of the low electric field is 5 x 10 5 V/m. The strength of the high electric field is 8 x 10 7 V/m. The strength of the counter electric field is 5 x 10 5 V/m. The high electric field is applied for 1 s/time and the application times are 3 times. The application time of the counter electric field is 1 s/time, and the application times are 2 times.
Example 4
The embodiment provides a method for preparing a quantum dot-nanoparticle composite film, please continue to refer to fig. 4, which includes the following steps:
step one, filling a deposition liquid 200 'between an upper substrate 120 and a lower substrate 110, wherein the deposition liquid 200' comprises quantum dots and nano particles 201;
step two, connecting the upper substrate 120 to the positive electrode of the power supply, connecting the lower substrate 110 to the negative electrode of the power supply, so that the deposition liquid 200' is electrodeposited in a low electric field with an electric field strength of 1×10 6 V/m～2.5*10 6 V/m;
wherein, in the electro-deposition process, high electric fields of 1 second, 2 seconds and 10 seconds are respectively applied at the 1 st second, the 30 th second and the 90 th second, and the electric field strength of the high electric fields is 5×10 6 V/m～2.5*10 6 V/m, regulating and controlling the co-deposition of the nano particles and the quantum dots, and finally depositing to form the quantum dot-nano particle composite film 200.
In this example, the total time of electrodeposition was 300 seconds.
In this embodiment, the solvent of the deposition liquid includes PGMEA. The quantum dots are CdSe/ZnS, and the concentration is between 1 and 300 mg/ml; the nano particles are TiO 2 The concentration is between 1 and 100 mg/ml; the weight ratio of the nano particles to the quantum dots is (1-40): 20.
The quantum dots and the nanoparticles in the composite film obtained in this example were uniformly dispersed.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
In summary, the movement state of the nano particles relative to the quantum dots is regulated by dynamically regulating the direction, the size, the frequency and the time of applying the electric field in the process of preparing the quantum dots-nano particles by electrodeposition, so that different distribution states of the nano particles in the quantum dot film are realized, and different photoelectric characteristics and better patterning regularity are given to the quantum dots-nano particles. Because the mature quantum dot composite film often contains more than one nanoparticle, the effect of the method is more obvious for a quantum dot-nanoparticle material system of a complex system.
The preparation method of the quantum dot-nanoparticle composite film and the composite film provided by the embodiment of the application are described in detail, and specific examples are applied to illustrate the principle and the implementation of the application, and the description of the above examples is only used for helping to understand the method and the core idea of the application; meanwhile, those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, and the present description should not be construed as limiting the present application in view of the above.
Claims (9)
1. The preparation method of the quantum dot-nanoparticle composite film is characterized by comprising the following steps of:
a deposition area is arranged between the upper substrate and the lower substrate, deposition liquid is filled in the deposition area, the deposition liquid comprises quantum dots and nano particles, the quantum dots are selected from IIIA-VA groups or IB-VIA groups, and the nano particles are selected from one or more of silicon oxide, titanium oxide, zirconium oxide, tungsten oxide and barium titanate;
providing an electric field for the deposition area, so that the nano particles and the quantum dots in the deposition liquid are electrodeposited in the electric field, and regulating and controlling the relative movement of the nano particles and the quantum dots in the electric field in the electrodeposition process by dynamically regulating the intensity and the direction of the electric field, so as to form the quantum dot-nano particle composite film.
2. The method for preparing a quantum dot-nanoparticle composite film according to claim 1, wherein the upper substrate is connected to a positive electrode of a power supply, the lower substrate is connected to a negative electrode of the power supply, and a low electric field is continuously provided to the region where the deposition liquid is located for electrodeposition, so that the nanoparticles are deposited on the upper surface of the composite film.
3. The method for preparing a quantum dot-nanoparticle composite film according to claim 1, wherein the upper substrate is connected to a positive electrode of a power source, and the lower substrate is connected to a negative electrode of the power source, so that the deposition liquid is electrodeposited in a low electric field intensity; in the process of continuously providing low electric field intensity to the area where the deposition liquid is located, a high voltage is instantaneously applied to provide high electric field intensity, and finally the nano particles and the quantum dots are co-deposited, wherein the low electric field intensity is 5 x 10 5 V/m~5*10 7 V/m, the strength of the high electric field is 1 x 10 6 V/m~8*10 7 V/m, and the electric field strength of the high electric field is greater than the electric field strength of the low electric field.
4. The method for preparing a quantum dot-nanoparticle composite film according to claim 1, wherein the upper substrate is connected to a positive electrode of a power source, and the lower substrate is connected to a negative electrode of the power source, so that the deposition liquid is electrodeposited in a low electric field intensity; and, while facing the deposition liquidIn the process of continuously providing low electric field intensity in the region of the body, a high voltage is instantaneously applied to provide a high electric field, a reverse voltage is instantaneously applied to provide a reverse electric field, so that the nano particles are deposited on the lower surface of the composite film, and the low electric field intensity is 5 x 10 5 V/m~5*10 7 V/m, the strength of the high electric field is 1 x 10 6 V/m~8*10 7 V/m, and the electric field strength of the high electric field is greater than the electric field strength of the low electric field.
5. The method for preparing a quantum dot-nanoparticle composite film according to any one of claims 1 to 4, wherein the electric field strength in the electrodeposition process is 5 x 10 5 ~8*10 7 V/m; the electrodeposition time is 1-3600 s.
6. The method for preparing a quantum dot-nanoparticle composite film according to claim 3 or 4, wherein the application time period of the high electric field and the reverse electric field is 0.1 μs to 10 s/time; and the total duration of the application of the high electric field and the reverse electric field is 0.1 mu s-600 s.
7. The method for preparing a quantum dot-nanoparticle composite film according to any one of claims 1 to 4, wherein a mass ratio of the nanoparticle to the quantum dot in the deposition liquid is 1 to 500:50; and/or
The concentration of the quantum dots and the nanoparticles in the deposition liquid is 1-400 mg/mL; and/or
The diameter of the quantum dot is 2-150 nm; and/or
The diameter of the nano particles is 10-500 mu m.
8. The method of claim 1, wherein the solvent in the deposition liquid comprises one or more of alcohol ether acetates, alcohols, water, ethers, esters, alkanes.
9. A composite film prepared by the method for preparing the quantum dot-nanoparticle composite film according to any one of claims 1 to 8.
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| CN113745442A (en) * | 2021-08-23 | 2021-12-03 | 深圳市华星光电半导体显示技术有限公司 | Preparation method of nano particle film, nano particle film and display panel |
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| CN105733557A (en) * | 2016-04-22 | 2016-07-06 | 深圳市华星光电技术有限公司 | Ligand modification quantum dot material, producing method of liquid crystal display panel and liquid crystal display panel |
| CN113745442A (en) * | 2021-08-23 | 2021-12-03 | 深圳市华星光电半导体显示技术有限公司 | Preparation method of nano particle film, nano particle film and display panel |
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