CN112909213B - Electrically-driven quantum dot single photon source and preparation method thereof - Google Patents
Electrically-driven quantum dot single photon source and preparation method thereof Download PDFInfo
- Publication number
- CN112909213B CN112909213B CN202110097476.1A CN202110097476A CN112909213B CN 112909213 B CN112909213 B CN 112909213B CN 202110097476 A CN202110097476 A CN 202110097476A CN 112909213 B CN112909213 B CN 112909213B
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- injection layer
- positive electrode
- insulating film
- dispersion liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides an electrically-driven quantum dot single photon source and a preparation method thereof, wherein the preparation method comprises the following steps: 1) Providing a substrate; 2) Depositing a positive electrode on the surface of the substrate, etching the positive electrode to form a columnar array, and depositing a first insulating film on the surface of the positive electrode; 3) Depositing a hole injection layer on the surface of the first insulating film; 4) Providing silver sulfide quantum dots, dispersing the quantum dots in a dispersion liquid to form a quantum dot dispersion liquid, immersing the upper surface of the hole injection layer in the quantum dot dispersion liquid, and applying voltage between the quantum dot dispersion liquid and a positive electrode to form a stable and constant electric field so that a quantum dot material grows at a protruding position in the columnar array below the surface of the hole injection layer; 5) Depositing a second insulating film on the surface of the hole injection layer, wherein the second insulating film coats the quantum dots to form a quantum light-emitting layer; 6) Depositing an electron injection layer on the surface of the quantum dot light-emitting layer; 7) And forming a negative electrode on the surface of the electron injection layer.
Description
Technical Field
The invention belongs to the technical field of semiconductor photoelectronic devices, and particularly relates to an electrically driven quantum dot single photon source and a preparation method thereof.
Background
A single photon source is a core component in quantum communication systems. The development trend of quantum communication requires that a single photon source has the characteristics of simple driving mode, capability of working at communication wavelength, high single photon emission efficiency, multi-photon emission which is inhibited as much as possible, low background noise and the like. At present, common single photon sources cannot meet the requirements at the same time.
When a quantum dot single-photon source is prepared, a spin coating method is mostly adopted in the prior patent to lay quantum dots, although the method is simple to implement, the positions of the quantum dot light sources obtained in the implementation are disordered, the sizes of the quantum dot light sources are not controllable, and the quantum dot light sources which are uniformly distributed cannot be obtained.
Therefore, it is necessary to provide a technical solution to solve the problem of the position confusion and the uncontrollable size of the quantum dot light source.
Disclosure of Invention
In order to solve the problems, the invention provides an electrically driven quantum dot single photon source, which adopts the following technical scheme:
a preparation method of an electrically driven quantum dot single photon source is characterized by at least comprising the following steps:
1) Providing a substrate;
2) Depositing a positive electrode on the surface of the substrate, etching the positive electrode to form a columnar array, and depositing a first insulating film on the surface of the positive electrode;
3) Depositing a hole injection layer on the surface of the first insulating film;
4) Providing silver sulfide quantum dots, dispersing the quantum dots in a dispersion liquid to form a quantum dot dispersion liquid, immersing the upper surface of the hole injection layer in the quantum dot dispersion liquid, and applying a voltage between the quantum dot dispersion liquid and the positive electrode to form a stable and constant electric field so that quantum dot materials in the quantum dot dispersion liquid grow at the protruding positions in the columnar array in the positive electrode below the surface of the hole injection layer;
5) Depositing a second insulating film on the surface of the hole injection layer, wherein the quantum dots are coated by the second insulating film to form a quantum light-emitting layer;
6) Depositing an electron injection layer on the surface of the quantum dot light-emitting layer;
7) And forming a negative electrode on the surface of the electron injection layer.
Preferably, the specific process of step 4) includes: providing silver sulfide quantum dots, dispersing the quantum dots in a dispersion liquid, adjusting the addition amount of the quantum dots or the dispersion liquid to form a calibration dispersion liquid with the optical density of 0.1 at 800nm, and further diluting the calibration dispersion liquid to obtain the quantum dot dispersion liquid.
Preferably, the specific process of step 2) includes: depositing the positive electrode on the surface of the substrate by a chemical vapor deposition method, forming a columnar array on the positive electrode by surface etching, and depositing a first insulating film on the surface of the positive electrode by a spin-coating method.
Preferably, in the step 2), the distance between the columnar positive electrodes formed by etching the positive electrodes is greater than or equal to 3 μm, and the bottoms of the columnar positive electrodes are connected.
Preferably, the specific process of step 4) includes: and placing an electrode plate in the quantum dot dispersion liquid, applying adjustable voltage between the electrode plate and the positive electrode, wherein the electrode plate is connected with a power supply negative electrode, and the adjustable voltage range is lower than the breakdown voltage of the first insulating film.
Preferably, the material of the substrate comprises any one of quartz glass, transparent ceramic and polyimide; the material of the positive electrode comprises any one of fluorine-doped tin dioxide and indium tin oxide; the material of the hole injection layer comprises polyvinyl carbazole; the material of the electron injection layer comprises zinc oxide; the material of the negative electrode includes any one of silver, aluminum, and gold.
An electrically-driven quantum dot single photon source comprises a substrate, a hole injection layer, a quantum dot light emitting layer, an electron injection layer and a negative electrode, and further comprises a positive electrode, wherein the positive electrode is a columnar array and is arranged on the surface of the substrate, a first insulating film is deposited on the surface of the positive electrode, and the hole injection layer is deposited on the surface of the first insulating film; the quantum dot light-emitting layer comprises a second insulating film and quantum dots which are positioned in the second insulating film and are in contact with the hole injection layer, and the quantum dots are made of silver sulfide.
Preferably, the material of the first and second insulating films includes polymethyl methacrylate or silicon dioxide.
Preferably, the vertical distance between the quantum dot and the electron injection layer is 2 to 3nm.
Preferably, the material of the substrate comprises any one of quartz glass, transparent ceramic and polyimide; the material of the positive electrode comprises any one of fluorine-doped tin dioxide and indium tin oxide; the material of the hole injection layer comprises polyvinyl carbazole; the material of the electron injection layer comprises zinc oxide; the material of the negative electrode includes any one of silver, aluminum, and gold.
By adopting the preparation method of the electrically-driven quantum dot single photon source, the position and the size of the quantum dot light source can be controlled.
Drawings
FIG. 1 is a schematic diagram of an electrically driven quantum dot single photon source;
FIG. 2 is a schematic flow diagram of a process for preparing an electrically driven quantum dot single photon source;
fig. 3 is a schematic diagram of growing quantum dots.
Detailed Description
The following embodiments of the present invention are provided by way of specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1. It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
The present embodiment provides an electrically driven quantum dot single photon source, as shown in fig. 1, which mainly includes: the substrate 11, the positive electrode 121, the first insulating film 122, the hole injection layer 13, the quantum dot light emitting layer 14, the electron injection layer 15 and the negative electrode 16 are sequentially arranged from bottom to top; the quantum dot light-emitting layer 14 includes an insulating film 142 and silver sulfide quantum dots 141 in contact with the hole injection layer 13.
The invention also provides a preparation method of the single photon detector for regulating and controlling the superconducting nanowire, which comprises the following steps as shown in figure 2:
1) Providing a substrate;
2) Depositing a positive electrode on the surface of the substrate, etching the positive electrode to form a columnar array, and depositing a first insulating film on the surface of the positive electrode;
3) Depositing a hole injection layer on the surface of the first insulating film;
4) Providing silver sulfide quantum dots, dispersing the quantum dots in a dispersion liquid to form a quantum dot dispersion liquid, immersing the upper surface of the hole injection layer in the quantum dot dispersion liquid, and applying a voltage between the quantum dot dispersion liquid and the positive electrode to form a stable and constant electric field so that quantum dot materials in the quantum dot dispersion liquid grow at the protruding positions in the columnar array in the positive electrode below the surface of the hole injection layer;
5) Depositing a second insulating film on the surface of the hole injection layer, wherein the quantum dots are coated by the second insulating film to form a quantum light-emitting layer;
6) Depositing an electron injection layer on the surface of the quantum dot light-emitting layer;
7) And forming a negative electrode on the surface of the electron injection layer.
The technical scheme of the invention is described in detail in the following with the specific attached drawings.
As shown in fig. 1, step 1) is performed to provide a substrate.
As an example, the substrate 11 may be a transparent material such as quartz glass, transparent ceramic, polyimide, or the like. In the present embodiment, quartz glass is selected as the substrate 11.
Step 2), first, a positive electrode 121 is deposited on the surface of the substrate 11, and the material of the positive electrode 121 may be fluorine-doped tin dioxide or indium tin oxide or other light-transmitting conductive materials. In this embodiment, fluorine-doped tin dioxide with good light transmittance, small resistance, wide potential application range, and acid and alkali resistance is selected as the positive electrode 121.
As an example, a magnetron sputtering method, a chemical vapor deposition method, or the like can be used as a method of depositing the positive electrode 121. In the present embodiment, a positive electrode 121 is deposited on the surface of the substrate 11 by chemical vapor deposition;
after depositing the positive electrodes 121 on the surface of the substrate 11, forming the positive electrodes 121 into a columnar array by surface etching, wherein the distance between the columnar positive electrodes 121 is greater than or equal to 3 μm, and the bottoms of the columnar positive electrodes 121 are connected; finally, a first insulating film 122 is deposited on the surface of the positive electrode.
The material of the first insulating film 122 may be silicon dioxide, polymethyl methacrylate, or the like, which has a high near-infrared transmittance, and in this embodiment, silicon dioxide is used as the material of the first insulating film 122.
As an example, the method of depositing the first insulating film 122 in step 2) described above may include magnetron sputtering or sol-spin coating, and the sol-spin coating is selected in the present embodiment. Specifically, 5mg/mL perhydropolysilazane toluene solution is spin-coated at a rotation speed of 5000rpm/min, and heat treatment is performed at 50-100 ℃ for 30-50 min.
Step 3) is performed to deposit a hole injection layer 13 on the surface of the first insulating film 122.
As an example, the material of the hole injection layer 13 may be one selected from a mixture of poly (3, 4-ethylenedioxythiophene) and a polystyrene sulfonate salt or polyvinylcarbazole. In this embodiment, polyvinylcarbazole is selected as the hole injection layer 13. Specifically, a 10mg/mL polyvinylcarbazole chlorobenzene solution was spin-coated on the first insulating film 122 at a rotation speed of 3000rpm/min, and then heat-treated at 50 to 100 ℃ for 30min to obtain the hole injection layer 13.
And 4), providing silver sulfide quantum dots 141, dispersing the quantum dots 141 in a dispersion to form a quantum dot dispersion, immersing the upper surface of the hole injection layer 13 in the quantum dot dispersion, and applying voltage between the quantum dot dispersion and the positive electrode 121 to form a stable and constant electric field so that quantum dot materials in the quantum dot dispersion grow at protruding positions in the columnar array in the positive electrode 121 below the surface of the hole injection layer 13.
By way of example, the silver sulfide quantum dots 14 have a particle size of 2 to 4nm and are round or nearly round. The silver sulfide quantum dots are luminescent materials, the quantum dots have almost negligible toxicity, high-efficiency photoluminescence and electroluminescence, emission wavelength is adjustable in the near infrared first window and the near infrared second window, and efficient auger recombination.
Specifically, in step 4), the silver sulfide quantum dots 141 are dispersed in a dispersion, such as ethanol, and then the quantum dots or ethanol are added to form a standard dispersion having an optical density of 0.1 at 800nm, and the standard dispersion is diluted 100000 to 150000 times with ethanol to obtain a quantum dot dispersion.
As shown in fig. 3, the step 4) of growing silver sulfide quantum dots 14 on the surface of the hole injection layer 13 includes the following specific steps: the quantum dot dispersion liquid is contained in an insulating container, an electrode plate 17 is placed in the quantum dot dispersion liquid, the upper surface of the hole injection layer 13 is immersed in the quantum dot dispersion liquid, an adjustable voltage is applied between the electrode plate 17 and the positive electrode 121, wherein the electrode plate 17 is connected with the negative electrode of a power supply, the adjustable voltage range is lower than the breakdown voltage of the first insulating film 122, under the influence of an electric field generated by the columnar positive electrode 121, silver sulfide quantum dots 14 growing on the surface of the hole injection layer 13 are regularly distributed on the surface of the hole injection layer 13, and therefore controllable growth positions of the quantum dots are achieved; meanwhile, the size of the quantum dots can be adjusted by adjusting the size of the adjustable voltage.
And 5) depositing a second insulating film 142 on the hole injection layer, wherein the second insulating film 142 covers the quantum dots 141 to form the quantum dot light-emitting layer 14.
As an example, the vertical distance h between the quantum dot and the electron injection layer is 2 to 3nm. Because electrons penetrate through the 2-3 nm second insulating film through the tunneling effect and are injected into the quantum dots from the negative electrode 16, and the tunneling effect is very weak in a region without the distribution of the quantum dots because the silicon dioxide film is too thick, the effect that the recombination current is concentrated in the quantum dot region is ensured, the emission efficiency is increased, the direct exchange of carriers between the hole injection layer and the electron injection layer is slowed down, the phenomenon that a large number of carriers are recombined in the hole injection layer 13 or the electron injection layer 15 and the interface thereof is avoided, and finally the background noise is reduced.
As an example, the material of the second insulating film 142 may be silicon dioxide with reference to the material of the first insulating film 122 as described above, and the method of depositing the second insulating film 142 may be the same as the method of depositing the first insulating film 122, so that the quantum dot light emitting layer 14 may be obtained.
And 6) depositing an electron injection layer 15 on the surface of the quantum dot light-emitting layer 14.
As an example, zinc oxide or the like can be used as the material of the electron injection layer 15. In this embodiment, zinc oxide is selected as the electron injection layer, and specifically, in step 6), 10mg/mL of zinc oxide ethanol sol is spin-coated on the surface of the quantum dot light-emitting layer 14 at a rotation speed of 3000rpm/min, and is subjected to heat treatment at 50 to 100 ℃ for 30min to obtain the electron injection layer 15.
And 7) forming a negative electrode 16 on the surface of the electron injection layer 15.
As an example, the material of the negative electrode 16 may be selected from one of silver, aluminum, and gold. In the present embodiment, silver is selected as the negative electrode 16. Specifically, in step 7), a silver electrode is deposited on the surface of the electron injection layer 15 by a thermal evaporation method to form the negative electrode 16.
The invention obtains an electrically-driven single photon source which works in communication wavelength, high efficiency, few multiphoton emission, low background noise and environmental friendliness by improving the particle size and distribution design of quantum dots, the selection of materials, the structure of devices and the like.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (9)
1. The preparation method of the electrically driven quantum dot single photon source is characterized by at least comprising the following steps of:
1) Providing a substrate;
2) Depositing a positive electrode on the surface of the substrate, etching the positive electrode to form a columnar array, and depositing a first insulating film on the surface of the positive electrode;
3) Depositing a hole injection layer on the surface of the first insulating film;
4) Providing silver sulfide quantum dots, dispersing the quantum dots in a dispersion liquid to form a quantum dot dispersion liquid, immersing the upper surface of the hole injection layer into the quantum dot dispersion liquid, and applying a voltage between the quantum dot dispersion liquid and the positive electrode to form a stable electric field so that quantum dot materials in the quantum dot dispersion liquid grow at the protruding positions in the columnar array in the positive electrode below the surface of the hole injection layer;
5) Depositing a second insulating film on the surface of the hole injection layer, wherein the quantum dots are coated by the second insulating film to form a quantum light-emitting layer;
6) Depositing an electron injection layer on the surface of the quantum dot light-emitting layer;
7) Forming a negative electrode on the surface of the electron injection layer;
the specific process of the step 2) comprises the following steps: depositing the positive electrode on the surface of the substrate by a chemical vapor deposition method, forming a columnar array on the positive electrode by surface etching, and depositing a first insulating film on the surface of the positive electrode by a spin-coating method.
2. The method for preparing an electrically driven quantum dot single photon source according to claim 1, wherein the specific process of step 4) comprises: providing silver sulfide quantum dots, dispersing the quantum dots in a dispersion liquid, adjusting the addition amount of the quantum dots or the dispersion liquid to form a calibration dispersion liquid with the optical density of 0.1 at 800nm, and further diluting the calibration dispersion liquid to obtain the quantum dot dispersion liquid.
3. The method of claim 1 for preparing an electrically driven quantum dot single photon source, comprising: the distance between the columnar positive electrodes formed by etching the positive electrodes in the step 2) is more than or equal to 3 mu m, and the bottoms of the columnar positive electrodes are connected.
4. The method for preparing an electrically driven quantum dot single photon source according to claim 1, wherein the specific process of the step 4) comprises: and placing an electrode plate in the quantum dot dispersion liquid, applying adjustable voltage between the electrode plate and the positive electrode, wherein the electrode plate is connected with a power supply negative electrode, and the adjustable voltage range is lower than the breakdown voltage of the first insulating film.
5. The method of claim 1 for preparing an electrically driven quantum dot single photon source, comprising: the material of the substrate comprises any one of quartz glass, transparent ceramic and polyimide; the material of the positive electrode comprises any one of fluorine-doped tin dioxide and indium tin oxide; the material of the hole injection layer comprises polyvinyl carbazole; the material of the electron injection layer comprises zinc oxide; the material of the negative electrode includes any one of silver, aluminum, and gold.
6. An electrically driven quantum dot single photon source comprises a substrate, a hole injection layer, a quantum dot light emitting layer, an electron injection layer and a negative electrode, and is characterized in that: the electrically-driven quantum dot single photon source further comprises a positive electrode, wherein the positive electrode is a columnar array, the positive electrode is arranged on the surface of the substrate, a first insulating film is deposited on the surface of the positive electrode, and a hole injection layer is deposited on the surface of the first insulating film; the quantum dot light-emitting layer comprises a second insulating film and quantum dots which are positioned in the second insulating film and are in contact with the hole injection layer, and the quantum dots are made of silver sulfide.
7. An electrically driven quantum dot single photon source as in claim 6 wherein: the material of the first and second insulating films includes polymethyl methacrylate or silicon dioxide.
8. An electrically driven quantum dot single photon source as in claim 7 wherein: the vertical distance between the quantum dot and the electron injection layer is 2-3 nm.
9. An electrically driven quantum dot single photon source as in claim 6 wherein: the material of the substrate comprises any one of quartz glass, transparent ceramic and polyimide; the material of the positive electrode comprises any one of fluorine-doped tin dioxide and indium tin oxide; the material of the hole injection layer comprises polyvinyl carbazole; the material of the electron injection layer comprises zinc oxide; the material of the negative electrode includes any one of silver, aluminum, and gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110097476.1A CN112909213B (en) | 2021-01-25 | 2021-01-25 | Electrically-driven quantum dot single photon source and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110097476.1A CN112909213B (en) | 2021-01-25 | 2021-01-25 | Electrically-driven quantum dot single photon source and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112909213A CN112909213A (en) | 2021-06-04 |
| CN112909213B true CN112909213B (en) | 2023-04-18 |
Family
ID=76119413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110097476.1A Active CN112909213B (en) | 2021-01-25 | 2021-01-25 | Electrically-driven quantum dot single photon source and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112909213B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356462A (en) * | 2016-08-23 | 2017-01-25 | 苏州星烁纳米科技有限公司 | Light emitting diode including quantum dots and energy transfer molecules and fabrication method and display device thereof |
| CN106784329A (en) * | 2017-01-12 | 2017-05-31 | 武汉大学 | A kind of SnO2Quantum dot electron transfer layer perovskite solar cell and preparation method thereof |
| CN110379932A (en) * | 2019-08-08 | 2019-10-25 | 上海南麟电子股份有限公司 | A kind of electric drive quantum dot single-photon source and preparation method thereof |
| CN110911509A (en) * | 2019-12-10 | 2020-03-24 | 中国计量大学 | Copper sulfide quantum dot/cuprous thiocyanate heterojunction photoelectric film and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012131792A1 (en) * | 2011-03-31 | 2012-10-04 | パナソニック株式会社 | Semiconductor light-emitting device |
| CN108376745B (en) * | 2018-03-01 | 2020-08-18 | 京东方科技集团股份有限公司 | Quantum dot light-emitting diode, preparation method thereof and display panel |
| US11374189B2 (en) * | 2019-03-11 | 2022-06-28 | Canon Kabushiki Kaisha | Quantum dot, photoelectric conversion element including the same, light receiving element, photoelectric conversion apparatus, moving object, method for producing quantum dot, and method for producing photoelectric conversion element |
-
2021
- 2021-01-25 CN CN202110097476.1A patent/CN112909213B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356462A (en) * | 2016-08-23 | 2017-01-25 | 苏州星烁纳米科技有限公司 | Light emitting diode including quantum dots and energy transfer molecules and fabrication method and display device thereof |
| CN106784329A (en) * | 2017-01-12 | 2017-05-31 | 武汉大学 | A kind of SnO2Quantum dot electron transfer layer perovskite solar cell and preparation method thereof |
| CN110379932A (en) * | 2019-08-08 | 2019-10-25 | 上海南麟电子股份有限公司 | A kind of electric drive quantum dot single-photon source and preparation method thereof |
| CN110911509A (en) * | 2019-12-10 | 2020-03-24 | 中国计量大学 | Copper sulfide quantum dot/cuprous thiocyanate heterojunction photoelectric film and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 袁丽等.量子点敏化三维结构TiO2纳米管阵列的制备及光电性能研究.《东南大学硕士学位论文》.2017, * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112909213A (en) | 2021-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11005058B2 (en) | Light-emitting device including quantum dots | |
| KR102038170B1 (en) | Light-emitting device containing flattened anisotropic colloidal semiconductor nanocrystals and processes for manufacturing such devices | |
| US9958137B2 (en) | Light-emitting device containing anisotropic flat colloidal semiconductor nanocrystals and methods of manufacture thereof | |
| CN106601924A (en) | Quantum dot light emitting diode and preparation method thereof | |
| CN110379932A (en) | A kind of electric drive quantum dot single-photon source and preparation method thereof | |
| CN111900249A (en) | Memristor and preparation method thereof | |
| KR101980979B1 (en) | Thin-film light emitting device comprising charge electron transport layer and manufacturing method thereof | |
| CN108258155A (en) | A kind of method of the carrier transport of regulation and control and balance full-inorganic QLED | |
| CN203250777U (en) | Quantum dot light emitting diode and display device | |
| CN112909213B (en) | Electrically-driven quantum dot single photon source and preparation method thereof | |
| CN106784199A (en) | Full-inorganic QLED display devices and preparation method thereof | |
| WO2021196876A1 (en) | Display panel and manufacturing method therefor, and display apparatus | |
| CN111403616B (en) | Bromine inorganic salt perovskite film and preparation method and application thereof | |
| CN111244298B (en) | Light-emitting device and display | |
| CN108539028A (en) | A kind of light emitting diode with quantum dots device and preparation method thereof | |
| CN210516754U (en) | Electrically-driven quantum dot single photon source | |
| CN113120947A (en) | Composite material, preparation method thereof and quantum dot light-emitting diode | |
| WO2015023112A1 (en) | Substrate for organic light-emitting diode, method for manufacturing same, and organic light-emitting diode comprising same | |
| CN110416420A (en) | Light emitting diode with quantum dots and preparation method thereof | |
| CN111564535B (en) | Tunneling light-emitting diode constructed based on crossed microwire and preparation method thereof | |
| CN108054285B (en) | Preparation method of quantum dot film, electroluminescent device and preparation method thereof | |
| US10170629B2 (en) | Field-effect transistor and the manufacturing method | |
| CN114267799B (en) | Quantum dot light emitting diode and preparation method thereof | |
| CN113066933B (en) | Light emitting device, manufacturing method thereof, display substrate and display device | |
| CN110970534A (en) | Nickel oxide film, preparation method thereof and quantum dot light-emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |