CN113066933B - Light emitting device, manufacturing method thereof, display substrate and display device - Google Patents
Light emitting device, manufacturing method thereof, display substrate and display device Download PDFInfo
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- CN113066933B CN113066933B CN202110265478.7A CN202110265478A CN113066933B CN 113066933 B CN113066933 B CN 113066933B CN 202110265478 A CN202110265478 A CN 202110265478A CN 113066933 B CN113066933 B CN 113066933B
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- hole injection
- hole transport
- phase change
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- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000002347 injection Methods 0.000 claims abstract description 99
- 239000007924 injection Substances 0.000 claims abstract description 99
- 230000005525 hole transport Effects 0.000 claims abstract description 76
- 239000000463 material Substances 0.000 claims abstract description 71
- 239000012782 phase change material Substances 0.000 claims abstract description 60
- 230000008859 change Effects 0.000 claims abstract description 12
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 claims description 49
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 claims description 49
- 239000000243 solution Substances 0.000 claims description 23
- 239000002096 quantum dot Substances 0.000 claims description 22
- 239000011259 mixed solution Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 abstract description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 22
- 229910052984 zinc sulfide Inorganic materials 0.000 description 16
- 239000002105 nanoparticle Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 10
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 8
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 8
- 239000005083 Zinc sulfide Substances 0.000 description 8
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 8
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 8
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 4
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 4
- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 3
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004246 zinc acetate Substances 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NAJCQJKJQOIHSH-UHFFFAOYSA-L [Pb](Br)Br.[Cs] Chemical compound [Pb](Br)Br.[Cs] NAJCQJKJQOIHSH-UHFFFAOYSA-L 0.000 description 2
- LNDFVHXALNWEMX-UHFFFAOYSA-L [Pb](I)I.[Cs] Chemical compound [Pb](I)I.[Cs] LNDFVHXALNWEMX-UHFFFAOYSA-L 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- OGJOCASXPRMNAK-UHFFFAOYSA-L cesium;dichlorolead Chemical compound [Cs].Cl[Pb]Cl OGJOCASXPRMNAK-UHFFFAOYSA-L 0.000 description 2
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 108010025899 gelatin film Proteins 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 229910052981 lead sulfide Inorganic materials 0.000 description 2
- 229940056932 lead sulfide Drugs 0.000 description 2
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 2
- 239000002073 nanorod Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 238000012984 biological imaging Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002064 nanoplatelet Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a light emitting device, a preparation method thereof, a display substrate and a display device, wherein the light emitting device comprises: a hole injection layer and a hole transport layer, at least one of the hole injection layer and the hole transport layer being doped with a phase change material; the phase change material is configured to: when the current density of the light emitting device reaches the working current density, the phase change material changes phase, and the carrier mobility of the phase change material after the phase change is larger than the carrier mobility of the hole injection material in the hole injection layer and the carrier mobility of the hole transport material in the hole transport layer. The invention can improve the problem of roll-off of the luminous efficiency of the luminous device.
Description
Technical Field
The invention relates to the technical field of display, in particular to a light-emitting device, a preparation method thereof, a display substrate and a display device.
Background
The quantum dot is an important fluorescent nano material, has the advantages of excellent physicochemical and optical properties, such as wide absorption spectrum, narrow emission spectrum, high quantum yield, good fluorescence stability and the like, and is widely applied to the fields of biological imaging, biological sensors, light-emitting diodes (LEDs), quantum dot solar cells and the like.
However, the conventional quantum dot light emitting diode has a problem of efficiency roll-off, which results in a general low efficiency of the conventional quantum dot light emitting diode.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a light emitting device, a preparation method thereof, a display substrate and a display device.
In order to achieve the above object, the present invention provides a light emitting device comprising: a hole injection layer and a hole transport layer, at least one of the hole injection layer and the hole transport layer being doped with a phase change material;
the phase change material is configured to: when the current density of the light emitting device reaches the working current density, the phase change material changes phase, and the carrier mobility of the phase change material after the phase change is larger than the carrier mobility of the hole injection material in the hole injection layer and the carrier mobility of the hole transport material in the hole transport layer.
Optionally, the phase change material comprises vanadium dioxide.
Optionally, the vanadium dioxide has a particle size between 0.5nm and 50 nm.
Optionally, the hole injection layer includes a hole injection material and the phase change material, and the doping concentration of the phase change material in the hole injection layer is between 0.01% and 10%; and/or the number of the groups of groups,
the hole transport layer comprises a hole transport material and the phase change material, and the doping concentration of the phase change material in the hole transport layer is between 0.01% and 10%.
Optionally, the light emitting device further includes: a first electrode layer, a light emitting layer, an electron transport layer, and a second electrode layer;
the hole injection layer is arranged between the first electrode layer and the light emitting layer, and the hole transport layer is arranged between the hole injection layer and the light emitting layer;
the electron transport layer is arranged on one side of the light-emitting layer far away from the first electrode layer, and the second electrode layer is arranged on one side of the electron transport layer far away from the light-emitting layer.
Optionally, the light emitting layer comprises a quantum dot layer.
The invention also provides a preparation method of the light-emitting device, which comprises the following steps:
forming a hole injection layer and a hole transport layer on a substrate, at least one of the hole injection layer and the hole transport layer being doped with a phase change material;
the phase change material is configured to: when the current density of the light emitting device reaches the working current density, the phase change occurs, and the carrier mobility of the phase change material after the phase change is larger than the carrier mobility of the hole injection material in the hole injection layer and the carrier mobility of the hole transport material in the hole transport layer.
Optionally, the phase change material comprises vanadium dioxide,
the step of forming the hole injection layer includes:
mixing a solution containing vanadium dioxide with the hole injection material, the ratio of the mass of the vanadium dioxide to the mass of the hole injection material being between 0.01% and 10%;
coating the mixed solution, and curing the coated solution to obtain the hole injection layer; and/or the number of the groups of groups,
the step of forming the hole transport layer includes:
mixing a solution containing vanadium dioxide with the hole transport material, the ratio of the mass of the vanadium dioxide to the mass of the hole transport material being between 0.01% and 10%;
and coating the mixed solution, and curing the coated solution to obtain the hole transport layer.
The invention also provides a display substrate comprising the light-emitting device.
The invention also provides a display device which comprises the display substrate.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate the invention and together with the description serve to explain, without limitation, the invention. In the drawings:
fig. 1 is a schematic view of a light emitting device according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for manufacturing a light emitting device according to an embodiment of the present invention;
FIG. 3 is a second flowchart of a method for manufacturing a light emitting device according to an embodiment of the present invention;
fig. 4a is a flowchart of preparing a hole injection layer according to an embodiment of the present invention;
fig. 4b is a flowchart of preparing a hole transport layer according to an embodiment of the present invention;
FIG. 5 is a flow chart of the preparation of an alcohol solution containing vanadium dioxide according to an embodiment of the present invention.
Detailed Description
The following describes specific embodiments of the present invention in detail with reference to the drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the invention, are not intended to limit the invention.
Unless defined otherwise, technical or scientific terms used in the embodiments of the present invention should be given the ordinary meaning as understood by one of ordinary skill in the art to which the present invention belongs. The terms "first," "second," and the like, as used herein, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. Likewise, the word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.
Currently, conventional quantum dot light emitting diode structures include an electron transport layer and a hole transport layer, and a quantum dot layer disposed between the electron transport layer and the hole transport layer. However, the rate at which electrons and holes are injected into the quantum dot layer is unbalanced (the electron injection rate is greater than the hole injection rate), and as the current density increases, the problem of unbalanced injection of electrons and holes is further exacerbated, which causes the quantum dot layer to emit light in a non-radiative recombination manner, thereby causing a roll-off in the light emission efficiency of the quantum dot light emitting diode.
In view of the foregoing, an embodiment of the present invention provides a light emitting device, and fig. 1 is a schematic diagram of the light emitting device provided in the embodiment of the present invention, as shown in fig. 1, the light emitting device includes: a hole injection layer 1 and a hole transport layer 2, at least one of the hole injection layer 1 and the hole transport layer 2 being doped with a phase change material. The phase change material is configured to: when the current density of the light emitting device reaches the working current density, the phase change material changes phase, and the carrier mobility of the phase change material after the phase change is larger than the carrier mobility of the hole injection material in the hole injection layer 1 and the carrier mobility of the hole transport material in the hole transport layer 2.
In the embodiment of the invention, the phase change material can be a phase change material with carrier mobility close to that of a conductor after phase change. After the current density of the light emitting device increases and reaches the operating current density, the operating current density refers to the current density of the current flowing through the light emitting device when the light emitting device is in a light emitting state and the light emitting luminance of the light emitting device reaches a preset operating luminance. The phase change material changes phase, and the carrier mobility of the phase change material is greatly improved, so that the carrier mobility of the whole hole injection layer 1 and/or the hole transport layer 2 doped with the phase change material is improved. Thus, the injection speeds of holes and electrons can be kept balanced, and the problem of roll-off of luminous efficiency caused by unbalance of the injection speeds is solved.
Hereinafter, a light emitting device according to an embodiment of the present invention will be described in detail, in which a material of the hole injection layer 1 may include poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonic acid (PEDOT/PSS); the material of the hole transport layer 2 may include poly (9, 9-dioctylfluorene-co-N- (4-butylphenyl) diphenylamine) (TFB), or Polyvinylcarbazole (PVK). The phase change material may be doped in one of the hole injection layer 1 and the hole transport layer 2, or may be doped in both. Optionally, in an embodiment of the present invention, a phase change material is doped in the hole injection layer 1.
In some embodiments, the difference between the injection rates of electrons and holes is small before the current density of the light emitting device reaches the operating current density (i.e., before the phase change material changes phase), and the injection rates of electrons and holes at this time may be maintained in an equilibrium state. In some embodiments, the phase change material comprises vanadium dioxide (VO 2 ) The carrier mobility of vanadium dioxide is less than or equal to that of a hole injection material (hole transport material), thereby preventing the phase change material from affecting the equilibrium state of electron and hole injection speeds before phase change.
The inventors found in the study that when the current density of the light-emitting device reaches the working current density, the temperature of the light-emitting device is generally about 40 ℃ to 50 ℃, and the vanadium dioxide material can undergo phase transition about 40 ℃ to 50 ℃, and the crystal lattice is converted from a monoclinic structure to a metal state rutile tetragonal structure, so that the carrier mobility of the vanadium dioxide material is greatly improved, and the hole injection speed is further improved.
In some embodiments, the particle size of the vanadium dioxide is between 0.5nm and 50 nm. In the embodiment of the invention, the vanadium dioxide can exist in the form of nano particles, and the shape of the vanadium dioxide nano particles can be square, cylindrical or spherical. The particle size of the vanadium dioxide may refer to the size of the vanadium dioxide nanoparticles in either direction, for example, when the vanadium dioxide nanoparticles are spherical, the particle size of the vanadium dioxide may refer to the diameter of the vanadium dioxide nanoparticles.
In some embodiments, the hole injection layer 1 includes a hole injection material and a phase change material, and the doping concentration of the phase change material of the hole injection layer 1 is between 0.01% and 10%; and/or the hole transport layer 2 comprises a hole transport material and a phase change material, the doping concentration of the phase change material in the hole transport layer 2 being between 0.01% and 10%. Taking the hole injection layer 1 as an example, when the hole injection layer 1 is prepared, the ratio of the mass of the phase change material to the mass of the hole injection material can be between 0.01% and 10%, so that the doping concentration of the phase change material in the prepared hole injection layer 1 can reach 0.01% to 10%.
By adopting the phase-change material with the doping concentration, before the current density reaches the working current density, the effect of the phase-change material on the hole injection speed is low because the phase-change material occupies a relatively low area; meanwhile, after the current density reaches the working current density, the injection speed of holes can be greatly improved by adopting the phase change material with the doping concentration, so that the injection speed of electrons and holes is maintained in an equilibrium state.
In some embodiments, the light emitting device further comprises: a first electrode layer 3, a light emitting layer 4, an electron transport layer 5 and a second electrode layer 6. The hole injection layer 1 is disposed between the first electrode layer 3 and the light emitting layer 4, and the hole transport layer 2 is disposed between the hole injection layer 1 and the light emitting layer 4. The electron transport layer 5 is arranged on the side of the light emitting layer 4 remote from the first electrode layer 3, and the second electrode layer 6 is arranged on the side of the electron transport layer 5 remote from the light emitting layer 4.
In an embodiment of the present invention, the first electrode layer 3 may be an anode, and the second electrode layer 6 may be a cathode. The material of the first electrode layer 3 may include an Indium Tin Oxide (ITO) material; the material of the electron transport layer 5 may include zinc oxide, and further, the electron transport layer 5 may be a zinc oxide nanoparticle film, a zinc oxide sol gel film, or the like. The light emitting layer may be an organic light emitting layer or a quantum dot layer. The material of the quantum dot layer may include an inorganic quantum dot material, which may be, for example, cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium antimonide (CdTe), zinc selenide (ZnSe), indium phosphide (InP), lead sulfide (PbS), copper indium sulfide (CuInS 2), zinc oxide (ZnO), cesium lead chloride (CsPbCl 3), cesium lead bromide (CsPbBr 3), cesium lead iodide (CsPbI 3), cadmium sulfide/zinc sulfide (CdS/ZnS), cadmium selenide/zinc sulfide (CdSe/ZnS), zinc selenide (ZnSe), indium phosphide/zinc sulfide (InP/ZnS), lead sulfide/zinc sulfide (PbS/ZnS), indium arsenide (InAs), indium gallium arsenide (InGaAs), indium gallium nitride (InGaN), gallium nitride (GaN), zinc telluride (ZnTe), silicon (Si), germanium (Ge), carbon (C), and the like, and other nano-scale materials having the above components, such as nanorods. Alternatively, in the embodiment of the present invention, the material of the quantum dot layer may be a material that does not contain cadmium in the above material; the material of the second electrode layer 6 may include an indium zinc oxide material (Indium Zinc Oxide, IZO).
In the embodiment of the invention, the light emitting device can be in a positive structure or an inverted structure, when the light emitting device is in the positive structure, the first electrode layer 3 is arranged on the substrate Sub of the light emitting device, and the second electrode layer 6 is arranged on one side of the first electrode layer 3 far away from the substrate Sub; when the light emitting device is of an inverted structure, the second electrode layer 6 is disposed on the substrate Sub of the light emitting device, and the first electrode layer 3 is disposed on a side of the second electrode layer 6 remote from the substrate Sub.
By adopting the light-emitting device provided by the embodiment of the invention, the electron injection speed and the hole injection speed can be kept balanced on the basis of not sacrificing the electron injection speed, and meanwhile, the aggregation of carriers at an interface can be reduced due to the increase of the hole injection speed, so that the stability of the light-emitting device can be further improved.
The present invention also provides a method for preparing a light emitting device, fig. 2 is one of flowcharts of a method for preparing a light emitting device provided in an embodiment of the present invention, and as shown in fig. 2, the method for preparing a light emitting device includes:
s11, providing a substrate;
and S12, forming a hole injection layer and a hole transport layer on the substrate, wherein at least one of the hole injection layer and the hole transport layer is doped with a phase change material.
Wherein the phase change material is configured to: the phase change occurs when the current density of the light emitting device reaches the operating current density, and the carrier mobility of the phase change material after the phase change is greater than the carrier mobility of the hole injection material in the hole injection layer and the carrier mobility of the hole transport material in the hole transport layer.
The light-emitting device prepared by the preparation method provided by the embodiment of the invention can keep the injection speeds of holes and electrons balanced when the current density of the light-emitting device reaches the working current density, thereby preventing the light-emitting efficiency of the light-emitting device from rolling off.
In some embodiments, the light emitting device may have a positive structure or an inverted structure, and the preparation method of the embodiment of the present invention is described below by taking the positive structure as an example of the light emitting device. Fig. 3 is a second flowchart of a method for preparing a light emitting device according to an embodiment of the present invention, fig. 4a is a flowchart of a method for preparing a hole injection layer according to an embodiment of the present invention, fig. 4b is a flowchart of a method for preparing a hole transport layer according to an embodiment of the present invention, and fig. 5 is a flowchart of a method for preparing a solution containing vanadium dioxide according to an embodiment of the present invention, and the method comprises, in combination with fig. 3 to 5:
s21, providing a substrate.
S22, forming a first electrode layer on the substrate, wherein the first electrode layer can be an anode, and the material of the first electrode layer can comprise indium tin oxide. In this step, the first electrode layer may be formed on the substrate by a process such as evaporation or sputtering.
S23, cleaning the substrate on which the first electrode layer is formed. In this step, isopropyl alcohol, water, acetone solution may be used, and the substrate on which the first electrode layer is formed may be cleaned by ultrasonic waves. Further, the substrate on which the first electrode layer is formed may be further treated by ultraviolet UV light for a period of time of 5 to 10 minutes.
And S24, forming a hole injection layer and a hole transport layer on one side of the first electrode layer away from the substrate, wherein at least one of the hole injection layer and the hole transport layer is doped with a phase change material. Wherein the hole transport layer is located on a side of the hole injection layer away from the substrate.
In some embodiments, the phase change material may be doped in the hole injection layer, or the phase change material may be doped in the hole transport layer, or both the hole injection layer and the hole transport layer. The material of the hole injection layer 1 may include poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonic acid (PEDOT/PSS); the material of the hole transport layer 2 may include poly (9, 9-dioctylfluorene-co-N- (4-butylphenyl) diphenylamine) (TFB), or Polyvinylcarbazole (PVK). When the hole injection layer is doped with a phase change material (i.e., the hole injection layer includes a hole injection material and vanadium dioxide), as shown in fig. 4a, the step of forming the hole injection layer includes:
s241, mixing a solution containing vanadium dioxide with a hole injection material, wherein the ratio of the mass of the vanadium dioxide to the mass of the hole injection material is between 0.01% and 10%;
and S242, coating the mixed solution, and curing the coated solution to obtain the hole injection layer. In the hole injection layer prepared by the mass ratio, the doping concentration of the phase change material (vanadium dioxide) is between 0.01 and 10 percent.
In this step, the spin speed of the spin coater is controlled to 500rpm to 2500rpm to coat the mixed solution, and the temperature is controlled to 130 ℃ to 150 ℃ to cure the coated solution.
When the hole transport layer is doped with a phase change material (i.e., the hole transport layer includes a hole transport material and a phase change material), as shown in fig. 4b, the step of forming the hole transport layer includes:
s243, mixing a solution containing vanadium dioxide with the hole transport material, wherein the ratio of the mass of the vanadium dioxide to the mass of the hole transport material is between 0.01% and 10%;
and S244, coating the mixed solution, and curing the coated solution to obtain the hole transport layer.
As shown in fig. 5, in some embodiments, the step of preparing a solution containing vanadium dioxide includes steps S251 and S252:
s251, preparing vanadium dioxide powder, wherein in the embodiment of the invention, the vanadium dioxide can exist in the form of nano particles.
In the step, metal salt, inorganic salt and oxide powder of vanadium are placed in a crucible, the temperature is raised to 800-900 ℃ in a muffle furnace at a certain temperature rise speed, then the temperature is kept for 13-30 min, the vanadium pentoxide powder is completely melted, then the molten vanadium pentoxide is rapidly poured into unheated deionized water, and the mixture is rapidly stirred, and then heated and stirred for a certain time at 100 ℃ to enable the vanadium pentoxide to be completely dissolved and free of precipitation, so that vanadium pentoxide sol is formed. And then roasting to obtain vanadium dioxide powder.
S252, dispersing vanadium dioxide in the solution, wherein the vanadium dioxide is specifically dispersed in an alcohol solution when preparing the hole injection layer.
For example, vanadium dioxide powder was ground into powder, poured into an ethanol solution, and dispersed in ethanol by ultrasonic waves to dissolve in ethanol, thereby preparing a 1mg/ml ethanol solution.
After the hole injection layer and the hole transport layer are prepared, step S25 is performed.
And S25, forming a light-emitting layer on one side of the hole transport layer away from the substrate.
In this step, the light emitting layer includes a quantum dot layer. Specifically, the quantum dot material can be formed on the side, far away from the substrate, of the hole transport layer by spin coating, vapor deposition, ink-jet printing or the like, and then the quantum dot layer is obtained by curing. The material of the quantum dot layer comprises inorganic quantum dot material, such as cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium antimonide (CdTe), zinc selenide (ZnSe), indium phosphide (InP), lead sulfide (PbS), copper indium sulfide (CuInS) 2 ) Zinc oxide (ZnO), cesium lead chloride (CsPbCl) 3 ) Cesium lead bromide (CsPbBr) 3 ) Cesium lead iodide (CsPbI) 3 ) Cadmium sulfide/zinc sulfide (CdS/ZnS), cadmium selenide/zinc sulfide (CdSe/ZnS), zinc selenide (ZnSe), indium phosphide/zinc sulfide (InP/ZnS), lead sulfide/zinc sulfide (PbS/ZnS), indium arsenide (InAs), gallium indium arsenide (InGaAs), indium gallium nitride (InGaN), gallium nitride (GaN), zinc telluride (ZnTe), silicon (Si), germanium (Ge), carbon (C), and the like, as well as other nanoscale materials having the above components, such as nanorods, nanoplatelets. Alternatively, the material of the quantum dot layer in the embodiment of the present invention may be a material that does not contain cadmium.
And S26, forming an electron transport layer on one side of the light-emitting layer away from the substrate. In this step, an electron transporting material may be formed on the light emitting layer by spin coating, vapor deposition, ink jet printing, or the like, and then the electron transporting layer is formed by curing. Wherein the electron transport layer may comprise a zinc oxide nanoparticle film or a zinc oxide sol gel film.
Taking the electron transport layer as a zinc oxide nanoparticle film as an example, zinc oxide nanoparticles with the concentration of 10mg/mL to 30mg/mL are spin-coated on one side of the light-emitting layer far away from the substrate to form an electron transport material layer, wherein the rotating speed of a spin coater can be set to 500rpm to 2500rpm. And then curing the electron transport material layer at 25-120 ℃ to obtain the electron transport layer. The zinc oxide nanoparticles can be ion doped zinc oxide nanoparticles such as magnesium, indium, aluminum, gallium, and magnesium oxide nanoparticles, and the like.
Taking the electron transport layer as a zinc oxide sol-gel film as an example, 2g of zinc acetate is added into a mixed solvent containing 10mL of ethanolamine and n-butanol to form a zinc acetate solution, and the zinc acetate solution is spin-coated on one side of the light-emitting layer 4 far from the substrate to form an electron transport material layer, wherein the rotating speed of a spin coater can be set to 1000rpm to 4000rpm. Then, the electron transport material layer is cured under the condition of 180 ℃ to 250 ℃ to obtain an electron transport layer.
And S27, forming a second electrode layer on one side of the electron transport layer far away from the substrate, wherein the second electrode layer can be a cathode.
In this step, the second electrode layer may be formed on the side of the electron transport layer away from the substrate by evaporation or sputtering. The material of the second electrode layer may include a metal such as aluminum, copper, or silver, or may include an indium tin oxide film, indium zinc oxide, or the like.
And S28, packaging the light emitting device. Specifically, the light-emitting device is packaged by ultraviolet curing glue under ultraviolet excitation, and a packaging cover plate is covered and used for protecting the light-emitting device.
The embodiment of the invention also provides a display substrate, which comprises: the light emitting device described above.
The embodiment of the invention also provides a display device, which can be: electronic paper, mobile phone, tablet computer, television, display, notebook computer, digital photo frame, navigator, etc. Wherein, this display device includes: the display substrate.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (8)
1. A light emitting device, comprising: the quantum dot layer is arranged on one side of the hole transport layer, which is away from the hole injection layer;
at least one of the hole injection layer and the hole transport layer is doped with a phase change material; the phase change material comprises vanadium dioxide;
the vanadium dioxide is configured to: before the current density of the light emitting device reaches an operating current density, the carrier mobility of the vanadium dioxide is less than or equal to the carrier mobility of the hole injection material in the hole injection layer and the hole transport material in the hole transport layer; when the current density of the light-emitting device reaches the working current density, the vanadium dioxide changes phase, and the carrier mobility of the vanadium dioxide after the phase change is larger than the carrier mobility of the hole injection material in the hole injection layer and the carrier mobility of the hole transport material in the hole transport layer.
2. The light-emitting device according to claim 1, wherein the vanadium dioxide has a particle size of between 0.5nm and 50 nm.
3. The light-emitting device according to claim 1, wherein the hole injection layer comprises a hole injection material and the phase change material, and wherein a doping concentration of the phase change material in the hole injection layer is between 0.01% and 10%; and/or the number of the groups of groups,
the hole transport layer comprises a hole transport material and the phase change material, and the doping concentration of the phase change material in the hole transport layer is between 0.01% and 10%.
4. A light emitting device according to any one of claims 1 to 3, further comprising: a first electrode layer, a light emitting layer, an electron transport layer, and a second electrode layer;
the hole injection layer is arranged between the first electrode layer and the light emitting layer, and the hole transport layer is arranged between the hole injection layer and the light emitting layer;
the electron transport layer is arranged on one side of the light-emitting layer far away from the first electrode layer, and the second electrode layer is arranged on one side of the electron transport layer far away from the light-emitting layer.
5. A method of manufacturing a light emitting device, comprising:
forming a hole injection layer, a hole transport layer, and a quantum dot layer on a substrate, at least one of the hole injection layer and the hole transport layer being doped with a phase change material; the phase change material comprises vanadium dioxide;
the vanadium dioxide is configured to: before the current density of the light emitting device reaches an operating current density, the carrier mobility of the vanadium dioxide is less than or equal to the carrier mobility of the hole injection material in the hole injection layer and the hole transport material in the hole transport layer; when the current density of the light-emitting device reaches the working current density, the phase change occurs, and the carrier mobility of the vanadium dioxide after the phase change is larger than the carrier mobility of the hole injection material in the hole injection layer and the carrier mobility of the hole transport material in the hole transport layer.
6. The method of manufacturing as claimed in claim 5, wherein the phase change material comprises vanadium dioxide,
the step of forming the hole injection layer includes:
mixing a solution containing vanadium dioxide with the hole injection material, the ratio of the mass of the vanadium dioxide to the mass of the hole injection material being between 0.01% and 10%;
coating the mixed solution, and curing the coated solution to obtain the hole injection layer; and/or the number of the groups of groups,
the step of forming the hole transport layer includes:
mixing a solution containing vanadium dioxide with the hole transport material, the ratio of the mass of the vanadium dioxide to the mass of the hole transport material being between 0.01% and 10%;
and coating the mixed solution, and curing the coated solution to obtain the hole transport layer.
7. A display substrate, comprising: a light emitting device as claimed in any one of claims 1 to 4.
8. A display device, comprising: the display substrate of claim 7.
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