CN106356470A - Core/shell semiconductor nanorod film, polarization light emitting diode and preparation method thereof - Google Patents
Core/shell semiconductor nanorod film, polarization light emitting diode and preparation method thereof Download PDFInfo
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- CN106356470A CN106356470A CN201610820014.7A CN201610820014A CN106356470A CN 106356470 A CN106356470 A CN 106356470A CN 201610820014 A CN201610820014 A CN 201610820014A CN 106356470 A CN106356470 A CN 106356470A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Abstract
The invention discloses a core/shell semiconductor nanorod film, a polarization light emitting diode and a preparation method thereof. The preparation method comprises the following steps: dispersing a core/shell semiconductor nanorod in a non-polar solvent to obtain a core/shell semiconductor nanorod solution; filtering to obtain a purified core/shell semiconductor nanorod solution; dropwise adding the purified core/shell semiconductor nanorod solution in a polar solvent and dispersing, and after the non-polar solvent is volatilized completely, forming the core/shell semiconductor nanorod film. The obtained nanorod film is quite even, and nanorod arrays in the film are highly orderly arrayed. By a micro-contact transfer technology, the nanorod array film is transferred and integrated onto a light emitting diode device with a multi-layered structure, and polarized luminescence of electric devices is realized. The core/shell semiconductor nanorod film can be transferred to diode device substrates of various matrixes, and will be used for a vision-protecting polarization display or a 3D display system in the future.
Description
Technical field
The present invention relates to LED technology field, more particularly, to a kind of nucleocapsid semiconductor nano rod film, polarization are sent out
Optical diode and preparation method thereof.
Background technology
The polarization characteristic of light is widely used to illumination and flat panel Liquid Crystal shows.Polarized light source can be by being greatly decreased glare
And enhancing contrast ratio, thus reduce eyes do not accommodate eyestrain.However, multiple light sources do not possess the characteristic of polarization mostly at present,
Need to carry out polarization selection using various polarisers, but when using non-emissive polariser to realize polarization illumination, meeting
The incident illumination of loss unpolarized light source about 50%.This for be applied to illumination and lcd show for efficiency too low.Although poly-
Compound film can be used for realizing polarized light source conversion, but it causes backlight design complicated and cost intensive, this method in addition
The colour gamut of initial backlight can not be maintained.Therefore, exploitation is a kind of is capable of high energy efficiency and the polarized luminescence scheme of high chromaticness is
Significantly.
Anisotropic nucleocapsid structure semiconductor nanorods transmitting dipole is asymmetric, can form polarized light emission.Its
Light center is located at core nano-particle position rather than nanometer rods are most advanced and sophisticated.The quantum efficiency that nuclear shell structure nano rod lights is high,
Light excitation is high.Nucleocapsid structure semiconductor nanorods can be used for a new generation's photograph as a kind of high energy efficiency, the luminescent material of low cost
Bright and display device, thus concern and the research of height is obtained in the recent period in display field.
C.carbone et al., " synthesis and micrometer-scale assembly of colloidal
cdse/cds nanorods prepared by seeded growth approach”,nano letters 7(10),pp
2942-2950,2007 describe the dipole patterns transmitting of nuclear shell structure nano rod, that is, be derived from sending out of excellent center rather than its two ends
Penetrate.On the one hand, the preparation cost of semiconductor nanorods relatively low it is easy to solution disperses and has physics operability；On the other hand
It has excellent optical property, and including light excitation height, luminous quantum efficiency is high, Stokes shift is larger, glow color
The advantages of adjustable, long service life, become current novel light-emitting diode (light emitting diode, led) and light material
The research and development focus of material.
Also it is not directed in prior art be used for realizing polarized light source conversion by nucleocapsid structure semiconductor nanorods, existing to solve
Have and realize during polarized light source conversion, causing backlight design complexity, asking of initial backlight colour gamut can not be maintained using polymeric film
Topic.
Therefore, prior art has yet to be improved and developed.
Content of the invention
In view of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of nucleocapsid semiconductor nano rod film,
Polarized luminescence diode and preparation method thereof is realized causing backlight during polarized light source conversion it is intended to solve existing use polymeric film
Source design is complicated, problem that is can not maintaining initial backlight colour gamut.
Technical scheme is as follows:
A kind of preparation method of nucleocapsid semiconductor nano rod film, wherein, including step:
Nucleocapsid semiconductor nanorods are scattered in non-polar solven, obtain nucleocapsid semiconductor nanorods solution；
Described nucleocapsid semiconductor nanorods solution is filtered, the nucleocapsid semiconductor nanorods solution after being purified；
Nucleocapsid semiconductor nanorods solution after purification is added drop-wise to dispersion in polar solvent, so that non-polar solven is volatilized,
After non-polar solven volatilization completely, form nucleocapsid semiconductor nano rod film.
The preparation method of described nucleocapsid semiconductor nano rod film, wherein, described non-polar solven is normal hexane, first
One of benzene, chloroform.
The preparation method of described nucleocapsid semiconductor nano rod film, wherein, by described nucleocapsid semiconductor nanorods solution
Filtered by teflon membrane filter.
The preparation method of described nucleocapsid semiconductor nano rod film, wherein, the aperture of described teflon membrane filter is
200nm.
The preparation method of described nucleocapsid semiconductor nano rod film, wherein, described polar solvent is ethylene glycol.
A kind of nucleocapsid semiconductor nano rod film, wherein, described nucleocapsid semiconductor nano rod film quotes as above any one
The preparation method of described nucleocapsid semiconductor nano rod film is prepared from.
A kind of preparation method of polarized luminescence diode, wherein, including step:
A, prepare hole injection layer on the anode layer；
B, hole transmission layer is prepared on hole injection layer；
C, quantum dot light emitting layer is prepared on hole transmission layer；Wherein, the material of described quantum dot light emitting layer is core as described above
Shell semiconductor nano rod film；
D, finally on quantum dot light emitting layer, prepare electron injecting layer, and evaporation cathode, on electron injecting layer, obtains polarization and sends out
Optical diode.
The preparation method of described polarized luminescence diode, wherein, step c specifically includes: by the side of contact printing
Described nucleocapsid semiconductor nano rod film is transferred on hole transmission layer by formula polydimethylsiloxane, prepared quantum dot light emitting
Layer, then the ligand solution containing electron-donating group is spun on quantum dot light emitting layer, keeps 30-60s, is then dried,
After drying, spin coating neat solvent washes away unnecessary ligand.
A kind of polarized luminescence diode, wherein, the described polarization that as above any one quoted by described polarized luminescence diode is sent out
The preparation method of optical diode is prepared from, and described polarized luminescence diode includes anode layer, hole injection from below to up successively
Layer, hole transmission layer, quantum dot light emitting layer, electron injecting layer and negative electrode.
Described polarized luminescence diode, wherein, the material of described electron injecting layer is zno, tio2、wo3、sno2、
At least one in alzno, znsno, insno, tpbi, taz.
Beneficial effect: the present invention prepares nucleocapsid semiconductor nano rod film using interfacial assembly technology, because nanometer rods become
Film is highly uniform, the nanometer stick array high-sequential arrangement in thin film.Nano-stick array thin film transfer is integrated into multiple structure
LED device on, you can realize electroluminescent device polarized luminescence.Nucleocapsid semiconductor nano rod film is used for realizing polarization
Light source conversion not only can avoid the problem of backlight high cost can also maintain the colour gamut in initial backlight source.
Brief description
Fig. 1 is a kind of flow chart of present invention polarized luminescence diode preparation method preferred embodiment.
Fig. 2 is a kind of structural representation of present invention polarized luminescence diode.
Specific embodiment
The present invention provides a kind of nucleocapsid semiconductor nano rod film, polarized luminescence diode and preparation method thereof, for making this
The purpose of invention, technical scheme and effect are clearer, clear and definite, and the present invention is described in more detail below.It should be appreciated that this
The described specific embodiment in place, only in order to explain the present invention, is not intended to limit the present invention.
The present invention provides a kind of preparation method preferred embodiment of nucleocapsid semiconductor nano rod film, wherein, including step:
Nucleocapsid semiconductor nanorods are scattered in non-polar solven, obtain nucleocapsid semiconductor nanorods solution；By described nucleocapsid
Semiconductor nanorods solution is filtered, the nucleocapsid semiconductor nanorods solution after being purified；
Above-mentioned steps are specifically, be scattered in the non-pole such as normal hexane, toluene or chloroform after the drying of nucleocapsid semiconductor nanorods is weighed
In property solvent, obtain nucleocapsid semiconductor nanorods solution；With syringe, nucleocapsid semiconductor nanorods solution by aperture is
The ptfe filter membrane (teflon membrane filter) of 200nm is filtered, the nucleocapsid semiconductor nanorods solution after being purified.
Nucleocapsid semiconductor nanorods solution after purification is added drop-wise to dispersion in polar solvent, so that non-polar solven is waved
Send out, after non-polar solven volatilization completely, form nucleocapsid semiconductor nano rod film.
Above-mentioned steps are specifically, 102-105Under the air pressure of pa, by 100 μm of -5mm(of high concentration such as, 3mm) nucleocapsid partly lead
Body nanometer rods solution is added drop-wise to polar solvent (as ethylene glycol) Dispersion on surface, and the non-polar solven such as normal hexane, toluene or chloroform delays
Slowly uniformly volatilization leads to the nucleocapsid semiconductor nanorods concentration in drop to raise.With the volatilization of non-polar solven, nanometer rods are dense
Degree increases, and the distance between nanometer rods reduce, thus leading to the hydrophobic interaction between nanometer rods and dipole effect increase.On surface
Under tension force effect, the thin film that nanometer rods formation aligns.
The present invention prepares nucleocapsid semiconductor nano rod film using interfacial assembly technology, because nanometer rods film forming is very equal
Even, in thin film nanometer stick array high-sequential arrangement.Nano-stick array thin film transfer is integrated into luminous the two of multiple structure
On pole pipe device, you can realize electroluminescent device polarized luminescence.Nucleocapsid semiconductor nano rod film is used for realizing polarized light source conversion
The problem that backlight high cost not only can be avoided can also maintain the colour gamut in initial backlight source.
Based on said method, the present invention provides a kind of nucleocapsid semiconductor nano rod film, and wherein, described nucleocapsid quasiconductor is received
The preparation method that rice rod film quotes the as above nucleocapsid semiconductor nano rod film described in any one is prepared from.
The present invention also provides a kind of preparation method preferred embodiment of polarized luminescence diode, as shown in figure 1, including step
Rapid:
S100, prepare hole injection layer on the anode layer；
S200, hole transmission layer is prepared on hole injection layer；
S300, quantum dot light emitting layer is prepared on hole transmission layer；Wherein, the material of described quantum dot light emitting layer is as described above
Nucleocapsid semiconductor nano rod film；
S400, finally on quantum dot light emitting layer, prepare electron injecting layer, and evaporation cathode, on electron injecting layer, is polarized
Light emitting diode.
The nucleocapsid preparing semiconductor nano rod film is used for preparing polarized luminescence two by the present invention as luminescent material
Pole pipe.By micro- contact transfer technique, nano-stick array thin film transfer is integrated on the LED device of multiple structure,
And realize electroluminescent device polarized luminescence, improve the efficiency of diode displaying.And nucleocapsid semiconductor nano rod film can
Transfer to the diode component substrate of various substrate, the polarized luminescence diode future thus preparing can be used for protecting vision
Polarizer display or 3d display system.
Further, in step s100, anode layer of the present invention comprises a substrate further below, and described substrate can be
But it is not limited to ito substrate, described anode layer can be conducting metal oxide (as zno) or conducting polymer.The present invention is permissible
Hole injection layer is prepared on the anode layer by the way of spin coating；Described hole injection layer can for but be not limited to pedot:pss,
One of molybdenum oxide, vanadium oxide, tungsten oxide.
In step s200, the present invention then can prepare hole transmission layer by way of spin coating on hole injection layer；
Described hole transmission layer can be but be not limited to one or more of poly-tpd, pvk, cbp.
In step s300, the present invention is after the non-polar solven in nucleocapsid semiconductor nanorods film solution volatilizees completely
(the volatilization time is about 10-30min), pass through contact with polydimethylsiloxane (pdms) forme of low-surface-energy (as 1mn/m)
Formula mode of printing, nucleocapsid semiconductor nano rod film is transferred on hole transmission layer, and deposition obtains quantum dot light emitting layer；In amount
After son point luminescent layer has deposited, the solution of the ligand containing electron-donating group is covered on quantum dot light emitting layer, and keeps
30 ~ 60s(such as 40s), wash away unnecessary ligand with neat solvent during spin coating after being dried；
In step s400, the present invention prepares electron injecting layer on quantum dot light emitting layer, and evaporation cathode layer is in electron injecting layer
On, obtain the polarized luminescence diode based on nucleocapsid semiconductor nano rod film.Described electron injecting layer can be zno, tio2、
wo3、sno2, alzno, znsno, insno and tpbi (1,3,5- tri- (n- phenylbenzimidazol -2- base) benzene), taz (3- (4-
Xenyl) -4- phenyl -5- tert-butyl phenyl -1,2,4- triazoles) at least one.
Based on above-mentioned preparation method, the present invention also provides a kind of polarized luminescence diode, wherein, described polarized luminescence two pole
The preparation method that as above arbitrary described polarized luminescence diode quoted by pipe is prepared from, described polarized luminescence diode from lower and
On include anode layer, hole injection layer, hole transmission layer, quantum dot light emitting layer, electron injecting layer and negative electrode successively.
Fig. 2 is the structural representation of polarized luminescence diode of the present invention, as shown in Fig. 2 polarized luminescence diode of the present invention
Include anode layer 1 from below to up successively, hole injection layer 2, hole transmission layer 3, quantum dot light emitting layer 4, electron injecting layer 5 and
Negative electrode 6；Wherein, the material of described quantum dot light emitting layer is nucleocapsid semiconductor nano rod film as described above.
In sum, the present invention provides a kind of nucleocapsid semiconductor nano rod film, polarized luminescence diode and its preparation
Method, prepares nucleocapsid semiconductor nano rod film using interfacial assembly technology technology, and is used for preparing as luminescent material
Polarized luminescence diode.Nanometer stick array high-sequential arrangement because nanometer rods film forming is highly uniform, in thin film.Connect by micro-
Tactile transfer technique, nano-stick array thin film transfer is integrated on the LED device of multiple structure, and realizes electroluminescent device
Part polarized luminescence.Nucleocapsid semiconductor nano rod film can be transferred to the diode component substrate of various substrate, and future can be used for protecting
The polarizer display of shield vision or 3d display system.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can
To be improved according to the above description or to convert, all these modifications and variations all should belong to the guarantor of claims of the present invention
Shield scope.
Claims (10)
1. a kind of preparation method of nucleocapsid semiconductor nano rod film is it is characterised in that include step:
Nucleocapsid semiconductor nanorods are scattered in non-polar solven, obtain nucleocapsid semiconductor nanorods solution；
Described nucleocapsid semiconductor nanorods solution is filtered, the nucleocapsid semiconductor nanorods solution after being purified；
Nucleocapsid semiconductor nanorods solution after purification is added drop-wise to dispersion in polar solvent, so that non-polar solven is volatilized,
After non-polar solven volatilization completely, form nucleocapsid semiconductor nano rod film.
2. the preparation method of nucleocapsid semiconductor nano rod film according to claim 1 is it is characterised in that described nonpolar
Solvent is one of normal hexane, toluene, chloroform.
3. the preparation method of nucleocapsid semiconductor nano rod film according to claim 1 is it is characterised in that by described nucleocapsid
Semiconductor nanorods solution is filtered by teflon membrane filter.
4. the preparation method of nucleocapsid semiconductor nano rod film according to claim 3 is it is characterised in that described polytetrafluoro
The aperture of ethylene filter membrane is 200nm.
5. the preparation method of nucleocapsid semiconductor nano rod film according to claim 1 is it is characterised in that described polarity is molten
Agent is ethylene glycol.
6. a kind of nucleocapsid semiconductor nano rod film is it is characterised in that described nucleocapsid semiconductor nano rod film is quoted as right
The preparation method requiring the nucleocapsid semiconductor nano rod film described in any one of 1-5 is prepared from.
7. a kind of preparation method of polarized luminescence diode is it is characterised in that include step:
A, prepare hole injection layer on the anode layer；
B, hole transmission layer is prepared on hole injection layer；
C, quantum dot light emitting layer is prepared on hole transmission layer；Wherein, the material of described quantum dot light emitting layer is claim 6 institute
State nucleocapsid semiconductor nano rod film；
D, finally on quantum dot light emitting layer, prepare electron injecting layer, and evaporation cathode, on electron injecting layer, obtains polarization and sends out
Optical diode.
8. the preparation method of polarized luminescence diode according to claim 7 is it is characterised in that step c specifically includes: logical
Described nucleocapsid semiconductor nano rod film is transferred to hole transmission layer by the mode polydimethylsiloxane crossing contact printing
On, prepared quantum dot light emitting layer, then the ligand solution containing electron-donating group is spun on quantum dot light emitting layer, keeps
30-60s, is then dried, and after being dried, spin coating neat solvent washes away unnecessary ligand.
9. a kind of polarized luminescence diode is it is characterised in that described polarized luminescence diode is quoted as any one of claim 7-8
The preparation method of described polarized luminescence diode be prepared from, described polarized luminescence diode includes anode from below to up successively
Layer, hole injection layer, hole transmission layer, quantum dot light emitting layer, electron injecting layer and negative electrode.
10. polarized luminescence diode according to claim 9 is it is characterised in that the material of described electron injecting layer is
zno、tio2、wo3、sno2, at least one in alzno, znsno, insno, tpbi, taz.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107513304A (en) * | 2017-08-23 | 2017-12-26 | 南方科技大学 | A kind of preparation method of the fluorescence polarization film aligned based on quantum rod |
| CN107994124A (en) * | 2017-11-29 | 2018-05-04 | 京东方科技集团股份有限公司 | Light emitting diode and preparation method thereof, array base palte, electronic device |
| CN110165063A (en) * | 2019-05-27 | 2019-08-23 | 深圳市华星光电技术有限公司 | Quantum rod LED device |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101088180A (en) * | 2004-10-22 | 2007-12-12 | 麻省理工学院 | Light emitting device including semiconductor nanocrystals |
| CN101215467A (en) * | 2008-01-08 | 2008-07-09 | 上海大学 | Method for coating II-VI group semiconductor quantum dots by silicane |
| CN101830446A (en) * | 2010-04-30 | 2010-09-15 | 西安交通大学 | Preparation method of PbTe colloid nanocrystalline self-assembly film |
| CN101842460A (en) * | 2007-10-30 | 2010-09-22 | 伊斯曼柯达公司 | Device containing non-blinking quantum dots |
| CN102050428A (en) * | 2009-11-10 | 2011-05-11 | 中国科学院理化技术研究所 | Method for arranging one-dimensional organic nano materials in orientating and patterning manner |
| CN102086393A (en) * | 2010-12-07 | 2011-06-08 | 浙江大学 | Preparation method of ZnO, CuO and ZnS quantum dot film |
| CN103201674A (en) * | 2010-11-05 | 2013-07-10 | 耶路撒冷希伯来大学伊森姆研究发展公司 | Polarizing lighting systems |
| CN103430337A (en) * | 2011-03-28 | 2013-12-04 | 奥斯兰姆施尔凡尼亚公司 | LED device utilizing quantum dots |
| CN103436949A (en) * | 2013-09-04 | 2013-12-11 | 清华大学 | Single crystal thin film of organic semiconductor compound as well as preparation method and application of single crystal thin film |
| CN104529892A (en) * | 2015-01-28 | 2015-04-22 | 山东大学 | Preparation method of self-assembled 8-hydroxyquinoline aluminum salt crystal micro/nanoparticles |
| CN105244454A (en) * | 2015-10-16 | 2016-01-13 | Tcl集团股份有限公司 | Printed AM-QDLED and preparation method thereof |
| CN105307976A (en) * | 2013-03-06 | 2016-02-03 | 南洋理工大学 | Monolayer of nanorods on a substrate and method of forming the same |
-
2016
- 2016-09-13 CN CN201610820014.7A patent/CN106356470A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101088180A (en) * | 2004-10-22 | 2007-12-12 | 麻省理工学院 | Light emitting device including semiconductor nanocrystals |
| CN101842460A (en) * | 2007-10-30 | 2010-09-22 | 伊斯曼柯达公司 | Device containing non-blinking quantum dots |
| CN101215467A (en) * | 2008-01-08 | 2008-07-09 | 上海大学 | Method for coating II-VI group semiconductor quantum dots by silicane |
| CN102050428A (en) * | 2009-11-10 | 2011-05-11 | 中国科学院理化技术研究所 | Method for arranging one-dimensional organic nano materials in orientating and patterning manner |
| CN101830446A (en) * | 2010-04-30 | 2010-09-15 | 西安交通大学 | Preparation method of PbTe colloid nanocrystalline self-assembly film |
| CN103201674A (en) * | 2010-11-05 | 2013-07-10 | 耶路撒冷希伯来大学伊森姆研究发展公司 | Polarizing lighting systems |
| CN102086393A (en) * | 2010-12-07 | 2011-06-08 | 浙江大学 | Preparation method of ZnO, CuO and ZnS quantum dot film |
| CN103430337A (en) * | 2011-03-28 | 2013-12-04 | 奥斯兰姆施尔凡尼亚公司 | LED device utilizing quantum dots |
| CN105307976A (en) * | 2013-03-06 | 2016-02-03 | 南洋理工大学 | Monolayer of nanorods on a substrate and method of forming the same |
| CN103436949A (en) * | 2013-09-04 | 2013-12-11 | 清华大学 | Single crystal thin film of organic semiconductor compound as well as preparation method and application of single crystal thin film |
| CN104529892A (en) * | 2015-01-28 | 2015-04-22 | 山东大学 | Preparation method of self-assembled 8-hydroxyquinoline aluminum salt crystal micro/nanoparticles |
| CN105244454A (en) * | 2015-10-16 | 2016-01-13 | Tcl集团股份有限公司 | Printed AM-QDLED and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| LUIGI CARBONE, ET AL: "Synthesis and Micrometer-Scale Assembly of Colloidal CdSe/CdS Nanorods Prepared by a Seeded Growth Approach", 《NANO LETTERS》 * |
| 吕昊: "纳米粒子及金属离子与聚合物的自组装行为研究", 《中国硕士学位论文全文数据库》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107513304A (en) * | 2017-08-23 | 2017-12-26 | 南方科技大学 | A kind of preparation method of the fluorescence polarization film aligned based on quantum rod |
| CN107994124A (en) * | 2017-11-29 | 2018-05-04 | 京东方科技集团股份有限公司 | Light emitting diode and preparation method thereof, array base palte, electronic device |
| US10431763B2 (en) | 2017-11-29 | 2019-10-01 | Boe Technology Group., Ltd. | Light emitting diode and preparation method thereof, array substrate and electronic device |
| CN107994124B (en) * | 2017-11-29 | 2020-02-21 | 京东方科技集团股份有限公司 | Light emitting diode, preparation method thereof, array substrate and electronic device |
| CN110165063A (en) * | 2019-05-27 | 2019-08-23 | 深圳市华星光电技术有限公司 | Quantum rod LED device |
| US11437543B2 (en) | 2019-05-27 | 2022-09-06 | Tcl China Star Optoelectronics Technology Co., Ltd. | Quantum rod light emitting diode device |
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