CN1143425A - Positive temperature coefficient thermistor and thermistor device using it - Google Patents
Positive temperature coefficient thermistor and thermistor device using it Download PDFInfo
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- CN1143425A CN1143425A CN 95191941 CN95191941A CN1143425A CN 1143425 A CN1143425 A CN 1143425A CN 95191941 CN95191941 CN 95191941 CN 95191941 A CN95191941 A CN 95191941A CN 1143425 A CN1143425 A CN 1143425A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/1406—Terminals or electrodes formed on resistive elements having positive temperature coefficient
Abstract
The invention provides a high reliable positive temperature coefficient thermistor capable of avoiding silver migration even under high temperature and humidity environment. The first characteristics of the positive temperature coefficient thermistor is to provide on both main surfaces thereof with the first electrode layers including silver layers formed so that the ends may come inside the periphery of the thermistor base material 1 as well as the second electrode layers comprising aluminum formed as if covering the surface and sides of the first electrode layers.
Description
The present invention relates to positive temperature coefficient thermis, and adopt its thermistor apparatus, particularly about its electrode structure.
To BaTiO
3In add the Y of 0.1～0.3at%, behind the oxide semiconductor of Nd etc., because it has big positive temperature coefficient, so be called as the PTC thermistor.
This PTC thermistor; adding Sr; behind the Pb etc.; because can be very big; have in the temperature range of positive temperature coefficient and adjust, so in temperature survey and overcurrent protection, the motor starting; the colour TV demagnetization is used etc., is used widely as various fields such as circuit element and low temperature pyrotoxins.
An example of such thermistor, shown in Figure 23 (a) like that, constitute by following several sections, that is: with Ba, Ti, metal oxides such as Nd, carbonate, nitrate, chloride etc. carry out sintering, make it be configured as thin columned thermistor base substrate 11; On it and below the Ni coating that forms, be the 1st electrode layer 12a, 12b; Forming with silver on its upper strata is the 2nd electrode layer 13a of Main Ingredients and Appearance, 13b.
Such positive temperature coefficient thermis, usually in use at the 2nd electrode layer 13a, making alive between 13b, and at this moment along direction of an electric field has silver in the 2nd electrode layer and moves and separate out, and produces so-called transport phenomena.Particularly when being shaped, the 2nd electrode layer outer peripheral edges arrive the periphery ora terminalis of positive temperature coefficient thermis base substrate 1, at the outer peripheral face of positive temperature coefficient thermis base substrate 1, along the direction of electric field, have silver and move and separate out, and finally have the problem that is short-circuited.
Therefore,, proposed shown in Figure 23 (b), made the external diameter of the 2nd electrode layer smaller, formed the scheme of positive temperature coefficient thermis than the 1st electrode layer external diameter in order to address this problem.
But, in this structure, because the profile of the 2nd set electrode layer is smaller than the profile of the 1st electrode layer, so in the 1st electrode layer, just have not by the topped part of the 2nd electrode layer, because of contacting with atmosphere, so existence is oxidized easily, the problem that contact resistance increases gradually.
In addition, owing to have the phenomenon of silver along the direction of an electric field migration, as having now, even as only the 2nd electrode layer being provided with to the inside from periphery, so the silver in the 2nd electrode layer exposes, still having a little, migration takes place, problem of short-circuit is merely able to alleviate, but prevents it is impossible fully.
In addition, existing positive temperature coefficient thermis forms electrode with galvanoplastic.Use this method, when the formation electrode plated Ni, plating bath soaked into to sintered body inside, reduces resistance value etc., tends to make the characteristic variations of sintered body.After this electrode forms, show characteristic variations sometimes at once, also have plenty of in time and slowly show.The purposes of thermistor has the measurement of temperature and control, compensation as described above, and gain is adjusted, power measurement, and overcurrent protection, motor starting, colour TV demagnetization are used etc., not only all need to control high-precision resistance value, and will be used in the scope of R ± α %.Therefore, owing to the resistance change problem that soaking into of electroplate liquid causes, it is important to have become.
In addition, for fear of the problem of soaking into of this electroplate liquid, also proposed to form the method for electrode with low-melting-point metals such as aluminium by metalikon.
But, when this method also forms because of electrode,,, inevitably have the problem that cracks to thermistor base substrate or electrode itself with the acute variation of temperature.
Therefore, for addressing this problem, present inventors open flat 6-5403 number according to the spy, propose with aluminium perhaps to use the thermistor electrode structure scheme of vapor-deposited film as the printing electrode of main component.According to such structure, because aluminium as main component, has avoided producing the problem of migration fully.In addition, because with printing or vapor-deposited film, element itself can not crack, and has improved durability.But because the 1st electrode is an aluminium film etc., it is big that the resistance of electrode itself becomes, so, there is the big problem that is not suitable for the loop of flowing through big electric current.
In addition, the electrode structure scheme for preventing to move has also been proposed, promptly; On whole of thermistor base substrate two interareas, forming nickel electrode is the 1st electrode; The gap area that around it, stays, forming with silver is the 2nd electrode of main component; Cover this gap area and form the 3rd electrode (spy opens flat 5-109503) that constitutes by aluminium-silicon.But, because that this structure can form on the surface is concavo-convex, when two overlapping use of element, owing to can not obtaining sufficient thermo-contact, so there is the big problem of residual current.
In addition, because the size of residual current is decided by the type of two elements, when thermistor is used in heating, also proposed to do the method for heating with the positive temperature coefficient thermis of winding, electrode surface at this moment, concavo-convex owing to existing, interelement thermo-contact variation, the problem that still exists residual current not reduce.
Existing like this electrode structure is owing to avoiding using aluminium with silver, though can prevent migration, the problem that exists contact resistance to increase.
And in the residual gap zone of peripheral edge portion, forming with silver is the electrode of main component, and the electrode that constitutes with aluminium-silicon covers this gap area again, and such structure is because the part that has silver to expose prevents to move insufficient.In addition, form concavo-convexly on the surface, when two overlapping uses of element, owing to can not obtain sufficient thermo-contact, still have the big problem of residual current.
Based on above-mentioned actual conditions, the objective of the invention is: provide to have good stable assembly manipulation, high reliability can prevent migration fully, is applicable to the positive temperature coefficient thermis of big current circuit.
Therefore, the 1st feature of the present invention is to possess: at two interareas of positive temperature coefficient thermis base substrate, from the outer peripheral edges of above-mentioned positive temperature coefficient thermis base substrate to the inside, reserve ora terminalis and the 1st electrode layer of the Ag containing layer that forms; Cover the surface of above-mentioned the 1st electrode layer and side and what form is the 2nd electrode layer of main component with aluminium.
Wish that the 2nd electrode layer is made of the conductivity boron compound pottery that contains 5～60vol% and the thick-film printed layer of aluminium.Can remove TiB as the boron compound of conductivity
2Outside, also have: ZrB
2, HfB
2, VbB
2, TaB
2, CrB
2, MoB
2Deng 2 borides; The monobasic boride of TiB, ZrB, HfB, VB, NbB, TaB, CrB, MoB, WB, NiB also has V
3B
4, V
3B
2, Nb
2B
3, Nb
3B
4, Ta
3B
2, Ta
3B
2, Cr
3B
4, Mo
3B
2, Mo
2B
5, W
2B
5, Ni
4B
3, B
4C compound group is therefrom selected more than a kind or their compound at least.
The 2nd feature of the present invention is to possess: at two interareas of thermistor base substrate, from the outer peripheral edges of above-mentioned positive temperature coefficient thermis base substrate to the inside, reserve the end and the 1st electrode layer of the single or multiple lift of the Ag containing layer that forms; Near above-mentioned the 1st electrode layer edge, cover the side and what form is the 2nd electrode layer that the layer of main component constitutes with aluminium.
The 3rd feature of the present invention is to possess: at two first type surfaces of positive temperature coefficient thermis base substrate, from the outer rim of above-mentioned positive temperature coefficient thermis base substrate to the inside, reserve the end and the 1st electrode layer of the single or multiple lift of the Ag containing layer that forms; Cover the surface of above-mentioned the 1st electrode layer and side and what form is the 2nd electrode layer of main component with silver; Near the ora terminalis of above-mentioned the 2nd electrode layer, cover the side and the aluminium lamination that forms, perhaps contain the conductivity boron compound of 5～60vol% and the layer of aluminium, the 3rd electrode layer of formation.
The 4th feature of the present invention is to possess: the 1st electrode layer that forms at two interareas of positive temperature coefficient thermis base substrate; From the ora terminalis of the 1st electrode layer to the inside, reserve ora terminalis and the silver layer that forms is the 2nd electrode layer; The 3rd electrode layer that constitutes by aluminium lamination that covers the 2nd electrode layer and form.
The 5th feature of the present invention is: by forming on two interareas of thermistor base substrate, outermost layer constitutes the positive temperature coefficient thermis of electrode with aluminium lamination; Constitute with the terminal of clamping positive temperature coefficient thermis,, use with respect to aluminium and do not form the material formation of fusing point at the alloy below 300 ℃ with the above-mentioned at least positive temperature coefficient thermis contact area of this terminal.
Wish that these materials are any in nickel, silver, copper, aluminium, the titanium, or their alloy.
According to said structure, owing to use the good silver electrode of conductivity, and this silver electrode covers with the aluminium electrode fully.So just do not deposit the short circuit risk that causes by migration yet.
Electrode about said structure, owing to form with dry process processes such as vapour deposition method, thick film screen printing methods, therefore, when electrode forms, can be by solution etc., contaminated because of thermistor billet surface and the inside exposed portions serve, and cause characteristic variations, it is good to form adherence on the contrary, the electrode that contact resistance is little.
According to above-mentioned the 1st kind of structure, because to the inside, reserve the end and form the 1st electrode layer of Ag containing layer from the outer peripheral edges of positive temperature coefficient thermis base substrate; Cover the surface of above-mentioned the 1st electrode layer and side and form the 2nd electrode layer that constitutes with aluminium lamination; So can keep good electrical conductivity, and can prevent the generation of moving fully.Desirablely be, if the 2nd electrode layer is by the conductivity boron compound and the aluminium that contain 5～60vol%, constitute with the thick film screen printing layer, in the sintering process of electrode, even caught oxygen, conductivity can not descend yet, so can keep good electrical contact in the contact portion that connects thermal resistance base substrate the 2nd electrode yet.
According to the 2nd kind of structure of the present invention, owing to can form contact in thermistor base substrate most surfaces, so contact resistance can be done very for a short time.In addition, owing to there is the 3rd electrode layer to cover the ora terminalis part of the 1st and the 2nd electrode layer, so the possibility that the thermistor base substrate breaks with crackle also can reduce greatly.
According to the 3rd kind of structure of the present invention, be not the 2nd electrode comprehensively, but remove a part, cover ora terminalis and side and form the 3rd electrode layer, this structure is also the same with first kind of structure, can prevent migration.
According to the 4th kind of structure of the present invention, because all covering, the surface of thermistor base substrate forms the 1st electrode layer, form the 2nd electrode layer on its upper strata, the same with the 1st kind of structure like this, the thermistor base substrate breaks and the possibility of crackle can reduce greatly.
According to the 5th kind of structure of the present invention, the point that contacts with electrode for terminal is a contact, whenever connecting voltage, owing to generate heat by big electric current, produce local temperature rise, allow to rise to 200 ℃ degree in accordance with regulations, so at least the region surface that contacts with thermistor of terminal, need not generate the material formation of the alloy below 300 ℃ with aluminium, to keep good not deciduous.Wish its flexible terminal, usefulness be that alloy with aluminium is dystectic material, be used in superficial layer as a kind of in nickel, silver, copper, aluminium, the titanium or their alloy.
Fig. 1 is the thermistor figure of expression the present invention the 1st embodiment;
Fig. 2 (a) and (b) are process drawings of same thermistor;
Fig. 3 is the thermistor figure of the present invention the 2nd embodiment;
Fig. 4 is thermistor figure (comparative example) in the past;
Fig. 5 is thermistor figure (comparative example) in the past;
Fig. 6 is the experimental rig figure that is used for migration test;
Fig. 7 is with device shown in Figure 6, carries out the result of migration test;
Fig. 8 is the installation drawing that is used to carry out the test of low temperature intermittent duty;
Fig. 9 is with device shown in Figure 8, carries out the result of low temperature intermittent duty test;
Figure 10 is the experimental rig figure that is used to carry out impulse current test;
Figure 11 is with device shown in Figure 10, carries out the result of impulse current test;
Figure 12 is used to measure the dependent experimental rig figure of terminal material to low temperature intermittent duty result of the test;
Figure 13 is with device shown in Figure 12, carries out the result of low temperature intermittent duty test;
Figure 14 is with device shown in Figure 12, the state that peels off that is produced by the examination of low temperature intermittent duty;
Figure 15 is the fusing point of the alloy of al and ni, silver, tin;
Figure 16 is the phasor that concerns of the composition of aluminum-tin alloy and fusing point;
Figure 17 is the phasor that concerns of the composition of silver-aluminium alloy and fusing point;
Figure 18 is the phasor that concerns of the composition of aluminum-nickel alloy and fusing point;
Figure 19 is the illustration of terminal construction;
Figure 20 is the table as a result of the relation of measuring element impedance and maximum impulse voltage;
Figure 21 is that the 3rd of thermistor of the present invention is implemented illustration;
Figure 22 is that the 4th of thermistor of the present invention is implemented illustration;
Figure 23 (a) and (b) be thermistor from front side figure.
Below, with regard to embodiments of the invention, elaborate with reference to drawing.
Fig. 1 is the positive temperature coefficient thermis figure of expression the present invention the 1st embodiment.
Positive temperature coefficient thermis is made of following several parts, that is: be the thermistor base substrate 1 of main component with the barium titanate; Enter inboard position a little from outer peripheral edges, it is such to reserve ora terminalis, on it and below silver-zinc (Ag-Zn) layer of forming with print process, be the 1st electrode layer 2a, 2b; Cover the 1st electrode layer 2a, 2b is such, with the silver layer (Ag) that method for printing forms, is the 2nd electrode layer 3a, 3b; Cover the 2nd electrode layer 3a, 3b is such, with aluminium-titanium boride (Ag-TiB of method for printing formation
2) layer, be the 3rd electrode layer 4a, 4b.The thickness of each electrode layer is about 10 μ m.
Below, describe with regard to the manufacture process of this positive temperature coefficient thermis.
It (b) is the process drawing that expression embodiment of the invention thermistor is made that Fig. 2 (a) reaches.
At first, shown in Fig. 2 (a), with TiO
2, BaCO
3, Nd
2O
3Powder, by given mixed, in 700 ℃～1000 ℃ temperature range, pulverize after the pre-burning, by cold-press method, press the machine-shaping of disk shape after, under 1300 ℃, advance sintering, the formation diameter is the disk shape thermistor base substrate 1 of 4.47mm.
Then, shown in Fig. 2 (b),,, apply the 1st～the 3rd electrode layer successively by the screen cloth method for printing at the end face (electrode forming surface) of thermistor base substrate 1.Therefore, at first carry out screen cloth and print,, behind 10 minutes drying processes, continue to carry out screen cloth and print with the Ag slurry through 180 ℃ with the Ag-Zn slurry, through 180 ℃, 10 minutes drying, last, use Al-TiB
2Slurry carries out screen cloth to be printed, through 180 ℃, and after 10 minutes dryings, again through 550 ℃, 10 minutes burning process and making.
At this, Al-TiB
2Slurry is to be about the aluminium powder of 5 μ m and the TiB that average grain diameter is about 3 μ m with average particulate diameter
2Ceramic powders mixes by 7: 3 ratios, after mixing adhesive and making pulpous state, adjusts its viscosity again and makes.
The thermistor that obtains like this, owing to as the electrode layer of main component, covered by the electrode layer of argentiferous fully, under the many wet environments of high temperature, use for a long time with not ionizable aluminium (Al) in distilled water, the migration of silver does not take place yet, and can keep reliability.And, between thermistor base substrate and the electrode good electrical contact is arranged.
In addition, owing to aluminium does not move, can be in whole primary flat coated electrode of element.Therefore, the flow direction that flows into the impulse current of element is consistent, compares with the past, is difficult to take place because surge current and voltage add fashionable crack of causing and fragmentation.
Fig. 3 is the figure of the positive temperature coefficient thermis of expression the present invention the 2nd embodiment.
This positive temperature coefficient thermis is to be made of following several parts, that is: be the thermistor base substrate 1 of main component with the barium titanate; Covering the top and following such comprehensively of it, form nickel (Ni) layer that thickness is 0.3～2.0 μ m with the vacuum evaporation coating embrane method, is the 1st electrode layer 2m, 2m; From the position that its outer peripheral edges enter inwards, it is such to reserve ora terminalis, with the silver layer (Ag) that the screen cloth method for printing forms, is the 2nd electrode layer 3a, 3b; Cover the 2nd electrode layer 3a, 3b is such, with aluminium-titanium boride (Al-TiB of method for printing formation
2) layer, be the 3rd electrode layer 4a, 4b.The thickness of the 2nd and the 3rd each electrode layer is about 10 μ m.
When forming and the foregoing description 1 form equally.
The thermistor that obtains so also can reach the effect same with the foregoing description 1.
For the ease of relatively, with and the embodiment of the invention 1 and 2 same thermistor base substrates 1, from enter inwards any position of its outer peripheral edges, it is such to reserve ora terminalis, forming the silver-zinc layer that deposits with the method for printing order is the 1st electrode layer 2a, 2b; With silver layer be the 2nd electrode layer 3a, 3b forms 1 electrode structure (Fig. 4) as a comparative example.
In addition, as a comparative example 2, omitted the 3rd electrode layer of thermistor embodiment 2 exactly, other and embodiment 2 form (Fig. 5) equally.
Then, carrying out migration test is with the such experimental rig of key diagram shown in Figure 6, is 120 ℃ in temperature, and humidity is in the environment of 95 (relative temperature) RH%, applies the voltage of 250V, open 30 minutes, closed 30 minutes, carry out 1000 circulations.And, after the test, EPMA is made in the side of element analyze, detect the migration of silver.Its testing result is shown in the table of Fig. 7.From this table, can obviously find out, in the structure of the embodiment of the invention 1 and 2, all never see migration, only have a spot of silver to be detected in the side of comparative example 1 and 2.
Then, carrying out the test of low temperature intermittent duty, is with the such experimental rig of key diagram shown in Figure 8, is in-20 ℃ in ambient temperature, applies 250V voltage, opens 1 minute, closes 5 minutes, carries out 1000 circulations; After the test, check that element has crack-free and fragment, and measure resistance change rate.Its result is illustrated in the table of Fig. 9.Find out clearly that from this table each example does not all break and fragment, change in resistance also has only-2.6～1.9% program, and each judgement all is 0.
Carrying out the surge current test then is with the such experimental rig of key diagram shown in Figure 10, apply voltage in temperature in-20 ℃ of environment,, increase voltage successively by 50V at every turn from 250V, the post-test-inspection element has or not cracked and fragment, and its check result is illustrated among Figure 11.Can find out obviously that from this result after the off-test, break and the fragment of element do not have fully.
Then,, be assembled in the terminal 10 shown in Figure 12,, must carry out the test of low temperature intermittent duty in order to measure the material of terminal the thermistor of this embodiment 1.At this, when the terminal surfaces material constituted with nickel and silver-colored coating, as shown in figure 13, the electrode after the test did not have peeling phenomenon.But, when forming terminal with scolder and tin, in the termination contact part peeling phenomenon will take place.This said peeling off, be exactly as shown in Figure 14, the electrode surface being equivalent to terminal 10 contacts site is called peeling off of R.In the test of low temperature intermittent duty, when adding voltage, generate heat owing to flowing through bigger electric current, local temperature rise is arranged, can think to make aluminium and tin and solder alloyization.From this result, as the material that is used in terminal surfaces, wish with not can with the nickel and the silver of aluminium alloying, also is that everybody is in common knowledge certainly.
In Figure 15 with table, expressed aluminium respectively with the fusing point of the alloy of nickel, silver, tin.Also have Figure 16 to Figure 18, represent the phasor that concerns of the composition of aluminum-tin alloy and fusing point respectively, the composition of silver-aluminium alloy and fusing point concern phasor, and the composition of aluminum-nickel alloy and fusing point concern phasor.
Flowing through big electric current according to every connection primary voltage and generate heat, produce local temperature rise at contact, is safe owing to rise to 200 ℃ of estimations, can not cause the material of the alloy below 300 ℃ so wish usefulness and aluminium.
In addition, structure as terminal, flexible terminal as shown in figure 19 and center terminal, its formation method has: at its all surfaces, the comprehensive galvanoplastic that constitute with the coating of nickel, copper, silver, aluminium etc., only at the contact area of positive temperature coefficient thermis, the parcel plating method that constitutes with the above-mentioned same coat of metal.In addition, constitute terminal, in the part of aluminium electrode layer and termination contact, can not be advisable with the layer of tin alloying at least to be provided with at all with tin commonly used.
Below, with regard to the above-mentioned the 1st and the 2nd embodiment, about adding TiB to Al
2Example describe.At component resistance constant and do not break and the situation of fragment under, change TiB
2Addition, measure the relation of it and maximum impact voltage.Its result is illustrated in the table of Figure 20.
Find out obviously that from this result the effect that shows with the addition more than the 5vol% more than 70vol%, is burnt till the difficulty that becomes.Like this, by adding TiB
2,, can think that maximum impact voltage can improve owing to improved the resistance contact of thermistor base substrate and aluminium.In the structure shown in the embodiment 2, contact with the resistance of thermistor base substrate, obtain by nickel electrode, by adding TiB
2Effect to maximum impact voltage almost be can't see.
More as can be known, can access resistivity according to the present invention stable, the thermistor that reliability is high by these.
Then, describe with regard to the 3rd embodiment of the present invention.
This positive temperature coefficient thermis, as shown in figure 21, it is constructed as follows: the thermistor base substrate 1 that with the barium titanate is main component; From the position that outer peripheral edges enter a little, it is such to reserve ora terminalis, on it and below, silver-zinc (Ag-Zn) layer that forms with method for printing is the 1st electrode layer 2a, 2b in turn; By the 2nd electrode layer 3a that silver layer (Ag) constitutes, 3b; Near the ora terminalis of the 2nd electrode layer, the side that covers the 1st and the 2nd electrode layer is such, with aluminium-titanium boride (Al-TiB of method for printing formation
2) layer be the 3rd electrode layer 4a, 4b.The thickness of each electrode layer is about 10 μ m.
According to this structure, because the 1st and the 2nd electrode layer is the stacked of same pattern form, two first type surfaces of positive temperature coefficient thermis base substrate are contacted much with the 1st electrode layer, can reduce contact resistance.In addition, owing to do not cover the whole of the 2nd electrode layer, estimation can reduce materials, reduces cost.
Then, describe with regard to the 4th embodiment of the present invention.
This positive temperature coefficient thermis, as shown in figure 22, it is constructed as follows: the thermistor base substrate 1 that with the barium titanate is main component; In its outer peripheral edges position inwards, it is such to reserve ora terminalis, on it and below form silver-zinc (Ag-Zn) layer with method for printing, be the 1st electrode layer 2a, 2b; It is such to cover above-mentioned the 1st electrode layer, and the silver layer (Ag) that forms with method for printing is the 2nd electrode layer 3a, 3b; Near the ora terminalis of the 2nd electrode layer, it is such to cover the side, with aluminium-titanium boride (Al-TiB of method for printing formation
2) layer, be the 3rd electrode layer 4a, 4b.The thickness of each electrode layer is about 10 μ m.
According to this structure, also can obtain cheap, the positive temperature coefficient thermis that reliability is high.
About the used aluminium lamination of the present invention, unqualified is to use fine aluminium, just says with aluminium to be the layer of main component.
As above illustrated, according to the present invention, do not have the short circuit risk that causes by migration, and an easily assembling, can access the positive temperature coefficient thermis of stability of characteristics.
Claims (10)
1. positive temperature coefficient thermis is characterized in that it possesses:
The positive temperature coefficient thermis base substrate; And
At two first type surfaces of above-mentioned positive temperature coefficient thermis base substrate, from the outer peripheral edges of above-mentioned positive temperature coefficient thermis base substrate to the inside, reserve the end and the 1st electrode layer of the single or multiple lift of the Ag containing layer that forms;
Covering the surface of above-mentioned the 1st electrode layer and side and what form is the layer of main component with aluminium, is the 2nd electrode layer.
2. according to the positive temperature coefficient thermis of claim 1 record, it is characterized in that above-mentioned the 2nd electrode layer is with the conductivity boron compound and the aluminium that contain 5～60vol%, constitutes with the thick-film printed layer.
3. positive temperature coefficient thermis is characterized in that it possesses:
The positive temperature coefficient thermis base substrate;
At two first type surfaces of above-mentioned positive temperature coefficient thermis base substrate, from the outer peripheral edges of above-mentioned positive temperature coefficient thermis base substrate to the inside, reserve the end and the 1st electrode layer of the single or multiple lift of the Ag containing layer that forms; And
Near the ora terminalis of above-mentioned the 1st electrode layer, cover the side and what form is that the layer of main component is the 2nd electrode layer with aluminium.
4. according to the positive temperature coefficient thermis of claim 3 record, it is characterized in that above-mentioned the 2nd electrode layer is with the conductivity boron compound and the aluminium that contain 5～60vol%, constitutes with the thick-film printed layer.
5. positive temperature coefficient thermis is characterized in that it possesses:
The positive temperature coefficient thermis base substrate;
At two first type surfaces of above-mentioned positive temperature coefficient thermis base substrate, from the outer peripheral edges of above-mentioned positive temperature coefficient thermis base substrate to the inside, reserve the end and the 1st electrode layer of the single or multiple lift of the Ag containing layer that forms;
Cover the surface of above-mentioned the 1st electrode layer and side and what form is the 2nd electrode layer of main component with silver; And
Near above-mentioned the 2nd electrode layer ora terminalis, cover the side and what form is the layer of main component with aluminium, the 3rd electrode layer of formation.
6. according to the positive temperature coefficient thermis of claim 5 record, it is characterized in that above-mentioned the 3rd electrode layer is with the conductivity boron compound and the aluminium that contain 5～60vol%, constitutes with the thick-film printed layer.
7. positive temperature coefficient thermis is characterized in that it possesses:
The positive temperature coefficient thermis base substrate;
The 1st electrode layer that forms at two first type surfaces of above-mentioned positive temperature coefficient thermis base substrate;
From the ora terminalis of above-mentioned the 1st electrode layer to the inside, reserve the ora terminalis part and what form is the 2nd electrode layer of main component with silver; And
Cover above-mentioned the 2nd electrode layer and what form is the 3rd electrode layer that the layer of main component constitutes with aluminium.
8. according to the positive temperature coefficient thermis of claim 7 record, it is characterized in that above-mentioned the 3rd electrode layer is with the conductivity boron compound and the aluminium that contain 5～60vol%, constitutes with the thick film screen printing layer.
9. thermistor apparatus is characterized in that it possesses:
The positive temperature coefficient thermis base substrate;
Form on two first type surfaces of above-mentioned positive temperature coefficient thermis base substrate, outermost layer is an aluminium lamination, or contains the conductivity boron compound of 5～60vol% and the layer of aluminium, constitutes the positive temperature coefficient thermis of electrode with this;
The terminal of the above-mentioned positive temperature coefficient thermis of clamping; And
At least with the positive temperature coefficient thermis contact area of above-mentioned terminal, use not form fusing point with aluminium and constitute at the material of the alloy below 300 ℃.
10. in the thermistor apparatus of putting down in writing according to claim 9, above-mentioned material is any in the above alloy of nickel, silver, copper, aluminium, titanium or its two kinds of metals.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34903/94 | 1994-03-04 | ||
| JP3490394 | 1994-03-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1143425A true CN1143425A (en) | 1997-02-19 |
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ID=12427152
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 95191941 Pending CN1143425A (en) | 1994-03-04 | 1995-03-02 | Positive temperature coefficient thermistor and thermistor device using it |
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| Country | Link |
|---|---|
| EP (1) | EP0749132A4 (en) |
| CN (1) | CN1143425A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006010317A1 (en) * | 2004-07-28 | 2006-02-02 | Kezheng Wang | Controllable electrothermal element of ptc thick film circuit |
| CN103811180A (en) * | 2012-11-07 | 2014-05-21 | 株式会社村田制作所 | Ceramic electronic component |
| CN107481825A (en) * | 2016-06-08 | 2017-12-15 | 兴亚株式会社 | Patch resistor |
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| US4101710A (en) * | 1977-03-07 | 1978-07-18 | E. I. Du Pont De Nemours And Company | Silver compositions |
| US4431983A (en) * | 1980-08-29 | 1984-02-14 | Sprague Electric Company | PTCR Package |
| CA1264871A (en) * | 1986-02-27 | 1990-01-23 | Makoto Hori | Positive ceramic semiconductor device with silver/palladium alloy electrode |
| EP0443618B1 (en) * | 1990-02-22 | 1995-11-08 | Murata Manufacturing Co., Ltd. | Method for producing a PTC thermistor |
| JPH04118901A (en) * | 1990-09-10 | 1992-04-20 | Komatsu Ltd | Positive temperature coefficient thermistor and its manufacture |
| JP2897486B2 (en) * | 1991-10-15 | 1999-05-31 | 株式会社村田製作所 | Positive thermistor element |
| JPH065403A (en) * | 1992-06-23 | 1994-01-14 | Komatsu Ltd | Positive temperature coefficient thermistor and manufacturing method thereof |
-
1995
- 1995-03-02 EP EP95910727A patent/EP0749132A4/en not_active Withdrawn
- 1995-03-02 CN CN 95191941 patent/CN1143425A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006010317A1 (en) * | 2004-07-28 | 2006-02-02 | Kezheng Wang | Controllable electrothermal element of ptc thick film circuit |
| CN100386829C (en) * | 2004-07-28 | 2008-05-07 | 王克政 | PTC thick film curc uit controllable electric heating element |
| US7800028B2 (en) | 2004-07-28 | 2010-09-21 | Kezheng Wang | Controllable electrothermal element of PTC thick film circuit |
| CN103811180A (en) * | 2012-11-07 | 2014-05-21 | 株式会社村田制作所 | Ceramic electronic component |
| CN103811180B (en) * | 2012-11-07 | 2017-05-17 | 株式会社村田制作所 | Ceramic electronic component |
| CN107481825A (en) * | 2016-06-08 | 2017-12-15 | 兴亚株式会社 | Patch resistor |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0749132A4 (en) | 1997-05-14 |
| EP0749132A1 (en) | 1996-12-18 |
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